CN107195724B - A method of AlGaN Schottky solar blind ultraviolet detector being prepared on GaN self-supported substrate using Graphene electrodes - Google Patents
A method of AlGaN Schottky solar blind ultraviolet detector being prepared on GaN self-supported substrate using Graphene electrodes Download PDFInfo
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- CN107195724B CN107195724B CN201710342853.7A CN201710342853A CN107195724B CN 107195724 B CN107195724 B CN 107195724B CN 201710342853 A CN201710342853 A CN 201710342853A CN 107195724 B CN107195724 B CN 107195724B
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- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 150000004678 hydrides Chemical class 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000000523 sample Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000035699 permeability Effects 0.000 abstract description 3
- 230000003447 ipsilateral effect Effects 0.000 abstract description 2
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000018199 S phase Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The present invention relates to a kind of methods for preparing AlGaN Schottky solar blind ultraviolet detector on GaN self-supported substrate using Graphene electrodes, wherein production method includes: and first passes through chemistry of hydrides gas phase to prepare self-supported substrate GaN, the AlGaN layer of N-type heavy doping high Al contents is sequentially depositing on GaN self-supported substrate, the AlGaN layers of high Al contents is lightly doped in N-type.Then in structured rear surface, the back electrode of Ohmic contact is made by electron beam evaporation, is lightly doped in AlGaN layer in N-type and prepares graphene Schottky contacts, and make circular pattern with lift-off technology.Finally deposit one layer of passivation layer at the top of total, and etched portions passivation layer is to graphene Schottky contacts surface, then deposited metal cap layer.The present invention takes into account current technique production procedure, using the GaN of high resistant rate as self-supported substrate, it is not ipsilateral in substrate to realize two contact for producing, reduce cut-in voltage, and graphene is used as Schottky contacts, ultraviolet permeability is further increased, solar blind ultraviolet detector performance is improved, with the ultraviolet light for detecting small-signal.
Description
Technical field:
The invention belongs to technical field of semiconductors, and in particular to a kind of application Graphene electrodes are on GaN self-supported substrate
The method for preparing AlGaN Schottky solar blind ultraviolet detector.
Background technique:
In order to detect faint artificial ultraviolet light, without being influenced by solar radiation, the research of solar blind ultraviolet detector
Just it is even more important.The manufacture craft of semiconductor ultraviolet detection device based on silicon materials and other conventional III-V compound materials
It is skillful, but since their forbidden bandwidth is relatively narrow, detector, which is made, to be used cooperatively with filter, could work present day
Blind ultraviolet band.Novel wide-band gap material, the especially appearance of ternary alloy three-partalloy AlGaN, for ultraviolet detector research bring it is prominent
The progress of broken property.The forbidden bandwidth of the AlGaN material of high Al contents (Al component is greater than 0.4) is continuously adjustable, its corresponding cut-off
Wavelength can be in day-old chick (280nm~200nm) consecutive variations, while having the characteristics that anti-radiation and resistant to high temperature.
Currently, AlGaN based solar-blind UV detector is in conjunction with Schottky junction structure, but most of structure is all
It is to prepare on a sapphire substrate, since sapphire insulate, two electrodes of the Ohmic contact of device can only be produced on the same side,
The cut-in voltage of device is increased, in addition sapphire poor thermal conductivity, prevents device from forming effective heat dissipation.It is directed to new material at present
Technology and not perfect, lack suitable substrate, the performance of these detectors is still to be improved, our institute's phases are not achieved
The high responsiveness hoped.And the metal thickness for being used as translucent Schottky contacts is relatively large, and ultraviolet permeability is relatively small,
Cause largely transmitting and absorption loss.
The day of the present invention prepared on GaN self-supported substrate on existing Process ba- sis using Graphene electrodes
Blind ultraviolet detector not only solves the big problem of device cut-in voltage, further improves ultraviolet permeability, realize day
The raising of blind ultraviolet detector performance.
Summary of the invention:
The object of the present invention is to provide a kind of GaN self-supported substrate Schottky type ultraviolet detectors using Graphene electrodes
Structure and production method, guarantee responsiveness in the case where, on existing Process ba- sis improve detector performance.
To solve the above problems, the present invention provides a kind of GaN self-supported substrate Schottky types using Graphene electrodes
UV detector structure production process and method, include the following steps:
Pass through chemistry of hydrides vapor deposition GaN self-supported substrate；
N-type heavy doping high Al contents are sequentially depositing using chemistry of hydrides vapor deposition on the GaN self-supported substrate
AlGaN layer, N-type the AlGaN layers of high Al contents is lightly doped.
At the above structure back side, the back electrode of Ohmic contact is made by electron beam evaporation；
It is lightly doped in AlGaN layer in N-type and prepares graphene Schottky contacts, and carve circular pattern with lift-off technology；
One layer of passivation layer is deposited at the top of total；
Etched portions passivation layer is to graphene Schottky contacts surface, then deposited metal cap layer；
The present invention takes into account current technique production procedure, using the GaN of high resistant rate as self-supported substrate, realizes two and connects
It is not ipsilateral that touching is produced on substrate, reduces cut-in voltage, and graphene is used as Schottky contacts, further increases ultraviolet
Rate is crossed, solar blind ultraviolet detector performance is improved, for detecting the ultraviolet light of small-signal.
Detailed description of the invention
Fig. 1 to Fig. 4 is the structural schematic diagram of each step in one embodiment of production method of panel detector structure of the present invention.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to a kind of GaN self-supported substrate Xiao using graphene proposed by the present invention
Special fundamental mode UV detector structure and preparation method thereof is further described.According to following explanation and claims, this hair
Bright advantage and feature will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-accurate ratio
Example, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Referring first to Fig. 1, using chemistry of hydrides vapor deposition substrate 101, the substrate material is GaN self-supporting lining
Bottom, the substrate thickness of reference are 300 μm, and room temperature unit area impedance is 0.01 Ω cm.
N-type heavily doped layer 102 is successively made by Metalorganic Chemical Vapor precipitating on the substrate material, N-type is lightly doped
Layer 103, the doped layer are the AlGaN layer of high Al contents, and thickness is respectively 1 μm, 3 μm.
Prepare Ohmic electrode 104 at 101 back side of substrate, it is preferred that the electrode be metal Ti/Al or Ti/Au, and
N2In short annealing is carried out to it.In the present embodiment, the thickness of selected Ti/Al electrode is respectively 10nm and 70nm, annealing temperature
Degree and time are respectively 750 DEG C and 60s.
Schottky contacts 105 are prepared on N-type lightly-doped layer 103, the Schottky contact materials arrive Multi-layer graphite for one
Alkene.After this, lift-off technology can be used, graphical Schottky contacts are prepared, as shown in Fig. 2, selected by the present embodiment
For 200 μm of circle of diameter.
Referring next to Fig. 3, in patterned 105 surface deposit passivation layer 106 of Schottky contacts, it is preferred that passivation layer institute
Material selection is SiO2。
With continued reference to FIG. 4, etched portions passivation layer 106 is to 105 surface of Schottky contacts.In 105 table of Schottky contacts
Face extends metal contact 107, it is preferred that metal material Au.
Although being not limited to this in addition, it should be noted that, the present invention discloses as above.Detector knot of the invention
Structure can be, but not limited to obtain using above-mentioned production method.Anyone skilled in the art are not departing from spirit of the invention
In range, it can make various changes and modification, therefore protection scope of the present invention should be with claim limited range
Subject to.
Claims (4)
1. a kind of method for preparing AlGaN Schottky solar blind ultraviolet detector on GaN self-supported substrate using Graphene electrodes,
Include:
It is vapor-deposited by chemistry of hydrides and prepares GaN self-supported substrate；
N-type heavy doping high Al contents are sequentially depositing by organic chemical vapor deposition in the front of the GaN self-supported substrate
The AlGaN layer of high Al contents is lightly doped in AlGaN layer, N-type；The AlGaN of the high Al contents is that Al component is greater than 0.4
AlGaN；
At the GaN self-supported substrate back side, the back electrode of Ohmic contact is made by electron beam evaporation；
Graphene Schottky contacts are prepared in the AlGaN layer that high Al contents are lightly doped in N-type, and prepare circle with lift-off technology
Pattern；
One layer of passivation layer is deposited at the top of total；
Etched portions passivation layer extends metal contact on Schottky contacts surface to graphene Schottky contacts surface.
2. application Graphene electrodes according to claim 1 prepare AlGaN Schottky day blind purple on GaN self-supported substrate
The method of external detector, it is characterised in that: the probe substrate is GaN self-supported substrate.
3. application Graphene electrodes according to claim 1 prepare AlGaN Schottky day blind purple on GaN self-supported substrate
The method of external detector, it is characterised in that: the N-type heavy doping that deposits on the GaN self-supported substrate and material is lightly doped.
4. application Graphene electrodes according to claim 1 prepare AlGaN Schottky day blind purple on GaN self-supported substrate
The method of external detector, it is characterised in that: the Schottky contact materials are graphene.
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| CN110137277B (en) * | 2019-04-09 | 2021-02-02 | 华南师范大学 | Nonpolar self-supporting GaN-based pin ultraviolet photoelectric detector and preparation method thereof |
| CN110071177A (en) * | 2019-05-24 | 2019-07-30 | 中国科学院半导体研究所 | Schottky diode and preparation method thereof, semiconductor power device |
| CN112489848A (en) * | 2020-12-07 | 2021-03-12 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor radiation battery |
| CN113594003B (en) * | 2021-07-20 | 2023-07-21 | 北方夜视技术股份有限公司 | Cs of composite quartz window 2 Te solar blind ultraviolet photocathode and preparation method thereof |
| CN114203329A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | GaN-based Schottky diode, beta nuclear battery and preparation method thereof |
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| CN105576073A (en) * | 2016-02-02 | 2016-05-11 | 合肥工业大学 | Graphene/beta-Ga<2>O<3>-based schottky junction deep ultraviolet photodetector and preparation method thereof |
| CN106169516A (en) * | 2016-08-31 | 2016-11-30 | 杭州紫元科技有限公司 | A kind of silica-based UV photodetector based on Graphene and preparation method thereof |
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| US20030015708A1 (en) * | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| CN100367518C (en) * | 2004-04-07 | 2008-02-06 | 中国科学院半导体研究所 | Ultraviolet detector with gallium nitride Schottky structure and production thereof |
| CN104362213B (en) * | 2014-09-11 | 2016-06-15 | 东南大学 | A kind of gallium aluminium nitrilo solar blind ultraviolet detector and preparation method thereof |
| CN104393093B (en) * | 2014-11-13 | 2017-02-01 | 北京工业大学 | High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105576073A (en) * | 2016-02-02 | 2016-05-11 | 合肥工业大学 | Graphene/beta-Ga<2>O<3>-based schottky junction deep ultraviolet photodetector and preparation method thereof |
| CN106169516A (en) * | 2016-08-31 | 2016-11-30 | 杭州紫元科技有限公司 | A kind of silica-based UV photodetector based on Graphene and preparation method thereof |
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