CN107808819A - A kind of liquid graphene is applied to the method for GaN base material and device - Google Patents
A kind of liquid graphene is applied to the method for GaN base material and device Download PDFInfo
- Publication number
- CN107808819A CN107808819A CN201710887677.5A CN201710887677A CN107808819A CN 107808819 A CN107808819 A CN 107808819A CN 201710887677 A CN201710887677 A CN 201710887677A CN 107808819 A CN107808819 A CN 107808819A
- Authority
- CN
- China
- Prior art keywords
- graphene
- gan base
- base material
- gan
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 180
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 179
- 239000000463 material Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000007788 liquid Substances 0.000 title claims abstract description 31
- 238000004528 spin coating Methods 0.000 claims abstract description 17
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 10
- 239000010439 graphite Substances 0.000 claims abstract description 10
- -1 graphite alkene Chemical class 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 33
- 239000002904 solvent Substances 0.000 claims description 25
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004448 titration Methods 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 238000010411 cooking Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000004377 microelectronic Methods 0.000 abstract description 22
- 238000012546 transfer Methods 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000013459 approach Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 description 5
- 238000007605 air drying Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- JRVCPDVOFCWKAG-UHFFFAOYSA-N Amosulalol hydrochloride Chemical compound Cl.COC1=CC=CC=C1OCCNCC(O)C1=CC=C(C)C(S(N)(=O)=O)=C1 JRVCPDVOFCWKAG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention relates to a kind of method that liquid graphene is applied to GaN base material and device, belong to technical field of semiconductors.The liquid graphene of the present invention be applied to the method for GaN base material and device liquid graphene titrate or spin coating by way of realize graphene be applied to GaN base photoelectron and microelectronic component, graphene both can be used as light absorbing layer or current conducting layer again as the contact electrode of GaN base device.This method is simple to operate, and repeatability is strong, the damage problem for avoiding conventional graphite alkene from shifting；And it can realize that the graphene size after transfer is controllable by way of photoetching, realize that graphene is combined with GaN base material, optimize and expand the performance of GaN base photoelectron and microelectronic component.The method provided by the invention that graphene is shifted using liquid graphene, it is applied to GaN base material and device for graphene, realizes that graphene is combined with GaN base material and provide new approaches.This method is also simple with technique, significant effect, the advantages of having a extensive future.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of liquid graphene is applied to GaN base material and device
Method.
Background technology
GaN base material belongs to direct wide bandgap semiconductor materials, and bonded energy is very big, has good chemical stability and heat
Stability.The ternary or multivariate solid solution alloy that component continuous variable is formed with AlN, InN etc. can technically be realized：
AlxGa1-xN、InxGa1-xN, quaternary solid solution alloy AlxInyGa1-x-yN.Its energy gap continuously may be used from 0.7eV to 6.2eV
Adjust, corresponding wavelength covers ultraviolet band from near-infrared, therefore GaN base material be prepare light emitting diode, photodetector,
The ideal material of the opto-electronic devices such as solar cell.In addition, the high electron mobility of GaN base material, high electron saturation velocities
And high breakdown Electric Field Characteristics cause it in development Deep trench termination, high temperature resistant, Flouride-resistani acid phesphatase semiconductor microelectronics
Also there is innate advantage.
However, how further to improve and expand GaN base opto-electronic device and the performance of microelectronic component is still people
The target of pursuit.The operating rate for how solving GaN base photoelectron and microelectronic component has much room for improvement, thermal diffusivity is bad, integrated
With interconnection difficulty it is big the problems such as be still restrict GaN base opto-electronic device and microelectronic component development and further apply important
Problem.The discovery of graphene, to solve these problems, optimization and the development of expansion GaN base photoelectron and microelectronic component and answering
With providing new approach.It is mainly reflected in the following aspects：
1) high light transmittance of graphene can be expected to the transparency electrode as GaN base opto-electronic device：Graphene is in visible ray
In the range of translucency be 97.7%, and printing opacity is evenly distributed, and tool has great advantage compared with traditional ITO electrode, if can
Using the transparency electrode by the use of graphene as photoelectric devices such as GaN material laser, LED, detectors, can be expected to greatly improve
The translucency of GaN material device.
2) thermal conductivity factor of graphene is 5300Wm-1k-1It is ten times of copper, therefore, the superior thermal conductivity of graphene is expected to
Solves the heat dissipation problem of GaN base microelectronic component.
3) electron mobility of graphene is very high --- 200000cm2/ Vs, it is more than 100 times of silicon electron mobility,
The electrical conductivity of graphene also may be up to 10 simultaneously6S/m, these performances are used for manufacturing the exhausted of electronic device before considerably beyond the mankind
Most of conductive material, therefore, the excellent electric conductivity of graphene are expected to improve the operating rate of GaN material device, solve GaN materials
The problem of operating rate deficiency be present in glassware part.
4) graphene superpower mechanical strength, which is expected to improve GaN material device, is integrally interconnected problem：The tension of graphene
Intensity can reach 42N/m2, it is 100 times of steel tensile strength, the light of GaN material preparation can be effectively improved with this performance
Problem is integrally interconnected existing for electronic device and microelectronic component.
Up to the present, on graphene is applied in GaN base device, the branch problem of graphene is largely
Limit graphene and be applied to GaN base photoelectron and microelectronic component.Current graphene transfer method is as follows：
1) using the method for chemical vapor deposition (CVD) in Cu substrate Grown graphenes；
2) Cu substrate substrates are eroded using corrosive liquid；
3) graphene separated with Cu substrates is transferred to GaN base material surface.
It is seen that being shifted using the above method, graphene process is complicated, and difficulty is big, and not only graphene is in transfer process
Be highly susceptible to damage, it is also difficult to control the graphene of transfer size and transfer after position.Therefore, turn of graphene
Shifting problem is always problem of concern, and how to simplify the transfer process of graphene is that graphene is applied into GaN base device
Important step.The solution of this problem, it will largely promote and graphene is applied to GaN base photoelectron and microelectronics device
Part.
The content of the invention
The invention solves technical problem of the prior art, there is provided a kind of liquid graphene be applied to GaN base material and
The method of device, this method liquid graphene titrate or spin coating by way of realize graphene be applied to GaN base photoelectricity
Son and microelectronic component, this method is simple to operate, and repeatability is strong, avoids the damage problem of conventional graphite alkene transfer；And can
In a manner of by photoetching, realize that the graphene size after transfer is controllable, realize that graphene is combined with GaN base material, optimize
And expand the performance of GaN base photoelectron and microelectronic component.The side provided by the invention that graphene is shifted using liquid graphene
Method, it is applied to GaN base material and device for graphene, realizes that graphene is combined with GaN base material and provide new approaches.
In order to solve the above-mentioned technical problem, technical scheme is specific as follows：
A kind of liquid graphene is applied to the method for GaN base material and device, comprises the following steps：
Step 1, growth GaN base material；
Step 2, configuration graphene solution；
Step 3, in GaN base material surface define graphene window；
Step 4, by way of spin coating or titration, the graphene solution that step 2 is configured is added drop-wise to GaN base material table
Define in graphene window in face；
Step 5, solvent flashing, realize the GaN base device based on graphene.
Preferably, step 1 is specially：MOCVD methods are utilized in substrate, GaN base material is grown by two-step growth method.
Preferably, the substrate is sapphire, silicon or carborundum.
Preferably, GaN base material is by one in GaN, AlN, InN and ternary or multicomponent alloy material that they are formed
Kind.
Preferably, step 2 configuration graphene solution concretely comprises the following steps, from solid graphite alkene, solvent be deionized water,
Alcohol or dimethylformamide, configure to obtain graphene solution by way of constant-temperature ultrasonic vibration.
Preferably, the concentration of the graphene solution is 0.1mg/mL graphene aqueous solution, is to select solid graphite alkene,
Solvent is deionized water, under 35 degree of constant temperature, what ultrasonic activation obtained for 72 hours.
Preferably, step 3 is specially：The position of graphene window is defined in GaN base material surface using the mode of photoetching
And size.
Preferably, the speed of spin coating described in step 4 is 300r/s.
Preferably, solvent flashing concretely comprises the following steps described in step 5：Dried using natural air drying, hot plate heating or baking box
Roasting mode is volatilized the solvent in graphene.
Preferably, the graphene both can be used as light absorbing layer or electricity again as the contact electrode of GaN base device
Spread conducting shell.
The beneficial effects of the invention are as follows：
1st, a kind of liquid graphene provided by the invention is applied to GaN base material and the method for device utilizes liquid graphene
Realize and graphene is applied to GaN base material and device, difficulty is big when efficiently solving conventional method transfer graphene, graphene
The problems such as position is unmanageable after size and transfer, to realize that graphene is combined with GaN base material, play graphene and GaN
The advantage of two kinds of material systems, optimization and expansion GaN base opto-electronic device and microelectronic component performance provide new method.
2nd, a kind of liquid graphene provided by the invention is applied to GaN base material and the method for device passes through liquid graphene
The mode of titration or spin coating is realized is applied to GaN base photoelectron and microelectronic component by graphene, and graphene both can conduct
The contact electrode of GaN base device, light absorbing layer or current conducting layer can be used as again.This method is simple to operate, and repeatability is strong, keeps away
The damage problem of conventional graphite alkene transfer is exempted from；And it can realize that the graphene size after transfer can by way of photoetching
Control, realizes that graphene is combined with GaN base material, optimizes and expand the performance of GaN base photoelectron and microelectronic component.The present invention
The method that graphene is shifted using liquid graphene of offer, it is applied to GaN base material and device for graphene, realizes graphene
It is combined with GaN base material and provides new approaches.
3rd, the method that a kind of liquid graphene provided by the invention is applied to GaN base material and device has that technique is simple,
Significant effect, the advantages of having a extensive future.
Brief description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the method flow diagram that liquid graphene provided by the invention is applied to GaN base material and device；
Fig. 2 is that liquid graphene provided by the invention realizes graphene/GaN Schottky junction structure double-color detector structural representations
Figure.
Reference in figure is expressed as：
21- turntables, 22-GaN sills, 23- dielectric films, 24- graphene solutions.
Embodiment
The present invention is described in detail below in conjunction with the accompanying drawings.
A kind of liquid graphene provided by the invention is applied to the method for GaN base material and device, specifically includes following step
Suddenly：
Step 1, growth GaN base material；
Step 2, configuration graphene solution；
Step 3, the positions and dimensions that graphene window is defined using the mode of photoetching in GaN base material surface；
Step 4, by way of spin coating or titration, the graphene solution that step 2 is configured is added drop-wise to GaN base material table
Define in graphene window in face；Preferably spun on speed is 300r/s.
Step 5, the solvent to be volatilized using the mode of natural air drying, hot plate heating or oven cooking cycle in graphene, are realized
GaN base device based on graphene.
The graphene both can be used as light absorbing layer or electric current to conduct again as the contact electrode of GaN base device
Layer.The number of plies of required graphene is determined by graphene solution and concentration and spin coating rotating speed or titration dosage.This method is applied to stone
Black alkene is applied to other all semi-conducting materials and device.
The substrate that wherein step 1 grows used in GaN base material is the typical substrates such as sapphire, silicon, carborundum, growing method
For metal organic chemical compound vapor deposition method (MOCVD), GaN base material, the GaN base material of growth are grown by " two-step growth method "
One kind in material includes GaN, AlN, InN and they are formed ternary or multicomponent alloy material.
Wherein step 2 configuration graphene solution, certain density graphene solution is configured according to mass ratio, solvent for use is
Deionized water, alcohol or dimethylformamide equal solvent, graphene are solid-state sheet graphene.Vibrated by constant-temperature ultrasonic
Mode, realize graphene in a solvent fully dispersed, obtain graphene solution.
The graphene aqueous solution that concentration such as the graphene solution is 0.1mg/mL, is to select solid graphite alkene 10mg,
Solvent is deionized water 100mL, under 35 degree of constant temperature, what ultrasonic activation obtained for 72 hours.
Photoresist wherein in step 3 used in photoetching is general photoresist, according to different GaN base photoelectrons and microelectronics device
Part demand, define graphene window.
Graphene solution is added drop-wise into GaN base material surface using the mode of spin coating or titration wherein in step 4 to define
In graphene window, if using spin-coating method spin coating graphene, according to the concentration of graphene solution and the number of plies of required graphene
Adjust graphene solution spin coating rotating speed；Graphene window is defined transferring graphene to GaN base material surface using titration
When middle, according to the concentration of graphene solution and the dosage of the number of plies of required graphene adjustment graphene solution titration.
The natural air drying either method of hot plate heating or oven cooking cycle is utilized wherein in step 5, volatilize graphene solution
Solvent, wherein with hot plate heating or oven cooking cycle solvent flashing, hot plate temperature or oven temperature no more than 60 degree, prevent
Graphene aoxidizes in atmosphere.
Present embodiment is described with reference to the drawings, Fig. 1 is the method flow that liquid graphene is applied to GaN base material and device
Figure, including：
(1) GaN base material is grown.Wherein GaN base material includes GaN, AlN, InN and the ternary or more that they form
One kind in first alloy material.Growth course utilizes " two-step growth method ", i.e., first grown buffer layer, outside regrowth GaN base material
Prolong layer.One in the GaN base material grown includes GaN, AlN, InN and they are formed ternary or multicomponent alloy material
Kind.
(2) graphene solution is configured.Wherein graphene is solid graphite alkene, and solvent is deionized water, either alcohol or
Dimethylformamide equal solvent.The graphene of doses is dissolved in solvent, vibrated using constant-temperature ultrasonic, realizes graphene
Abundant diffusion in a solvent.The graphene solution concentration of configuration should not be too big, and concentration is excessive, and graphene is easily reunited；
Meanwhile graphene concentration is unsuitable too small, the graphene of the too low GaN base material surface of concentration is easily discontinuous.
(3) GaN base material surface graphene window is defined.According to the actual demand of GaN base photoelectron or microelectronic component,
Define the window of graphene.If graphene is defined in light by graphene as Ohmic contact or Schottky contact electrode
Electronic device or microelectronic component electrode position；If graphene conducts as the light absorbing layer or electric current of GaN base device
Layer, then be defined in photosurface or other required positions by graphene.
(4) graphene solution is added drop-wise to GaN base material surface.Graphene solution is added dropwise using spin-coating method or titration
To defining window.Using during spin-coating method spin coating graphene, according to the concentration of graphene solution and required graphene
The number of plies, adjust spin coating speed；It is molten according to graphene during realizing that graphene is combined with GaN base material using titration
The number of plies of the concentration of liquid and required graphene, adjust the dosage of liquid graphene.
(5) solvent flashing, successfully realize that completing graphene using liquid graphene is transferred to GaN base material surface, completes
GaN base photoelectron or microelectronic component based on graphene.Wherein, either baking box drying or natural wind are heated using hot plate
Dry mode is volatilized the solvent of GaN base material surface liquid graphene.Wherein utilize hot plate heating or baking box drying graphene
During solvent, heating-up temperature prevents graphene from aoxidizing in atmosphere no more than 60 degree.When the volatilization of graphene solvent is complete, success
Realize and graphene is applied to GaN base material and device.
Reference picture 2, graphene/GaN Schottky is realized to liquid graphene provided by the invention in conjunction with specific embodiments
Feature detector is described in detail as follows：
It is raw by " two-step growth method " using mocvd method (MOCVD) growth GaN base material 22
Long GaN, 25nmGaN nucleating layers are grown first at 550 DEG C, the temperature of system is then increased to 1050 DEG C, about 3 μm of growth
GaN intrinsic epitaxial layers.
Using photoetching, Partial Window area is obtained on GaN surfaces, then passes through the side of plasma enhanced chemical vapor deposition
Method (PECVD), the window region on the surface of GaN base material 22 grow SiO2Or Al2O3Deng dielectric film 23.This dielectric film 23 is main
During for applying voltage at graphene end, prevent electric field from having influence on the surface of GaN base material 22.
Graphene solution 24 is configured, by 10mg graphene 100ml deionized waters, under 35 degree of constant temperature, ultrasonic vibration 72
Hour, realize the abundant diffusion of graphene aqueous solution.
The surface of part GaN base material 22 is deposited into SiO2The sample of dielectric film 23 is placed on turntable 21, is added dropwise certain
The graphene solution 24 of dosage, turntable rotating speed is adjusted, obtain liquid graphene and contacted with GaN.Such as it is added dropwise with pipette
0.1mg/mL graphene, turntable rotating speed 300r/s, 10s is rotated, realizes that graphene solution thin layer is covered in GaN base material 22
And SiO2The surface of dielectric film 23.And then place 2 hours in atmosphere, then under the conditions of natural air drying, successfully obtain graphene/GaN
Schottky junction structure detector, wherein, graphene is as transparent Schottky contact electrode.
In SiO2Graphenic surface on dielectric film 23 does graphene Schottky contact electrode test point.In GaN surface systems
Standby Ohmic electrode test point.Test result shows that this graphene/GaN detector electrology characteristics show Schottky contact properties,
When applying forward bias at graphene end, forward conduction characteristic is presented in detector；When applying backward voltage at graphene end,
Detector shows reverse saturated characteristic；In terms of optical characteristics, this detector in ultraviolet band in addition to having response, red
Also there is photoresponse at wave section 880nm.Wherein the photoresponse of ultraviolet band derives from GaN Intrinsic Gettering, and in infrared band
Photoresponse then derive from graphene.Therefore, graphene/GaN detectors are realized using liquid graphene, not only increases printing opacity
Property, the photoresponse of GaN Schottky junction structure detectors is improved, moreover, the performance of GaN Schottky junction structure detectors has also been expanded,
Realize ultraviolet-infrared bichromatic detection.
The inventive method is not limited to above-described embodiment, and the present invention is successfully realized graphene application by liquid graphene
In GaN base photoelectron and microelectronic component, graphene and GaN base material and other all semi-conducting material phases are adapted to carry out
With reference to photoelectron and microelectronic component.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. a kind of liquid graphene is applied to the method for GaN base material and device, it is characterised in that comprises the following steps：
Step 1, growth GaN base material；
Step 2, configuration graphene solution；
Step 3, in GaN base material surface define graphene window；
Step 4, by way of spin coating or titration, the graphene solution that step 2 is configured is added drop-wise to GaN base material surface circle
Determine in graphene window；
Step 5, solvent flashing, realize the GaN base device based on graphene.
2. according to the method for claim 1, it is characterised in that step 1 is specially：MOCVD methods are utilized in substrate, are led to
Cross two-step growth method growth GaN base material.
3. according to the method for claim 1, it is characterised in that the substrate is sapphire, silicon or carborundum.
4. according to the method for claim 1, it is characterised in that GaN base material by GaN, AlN, InN and they form
Ternary or multicomponent alloy material in one kind.
5. according to the method for claim 1, it is characterised in that step 2 configuration graphene solution concretely comprises the following steps, and selects
Solid graphite alkene, solvent are deionized water, alcohol or dimethylformamide, are arranged to by way of constant-temperature ultrasonic vibration
To graphene solution.
6. according to the method for claim 5, it is characterised in that the concentration of the graphene solution is 0.1mg/mL graphite
Aqueous solution, it is to select solid graphite alkene, solvent is deionized water, under 35 degree of constant temperature, what ultrasonic activation obtained for 72 hours.
7. according to the method for claim 1, it is characterised in that step 3 is specially：Using the mode of photoetching in GaN base material
Expect the positions and dimensions of delimited graphene window.
8. according to the method for claim 1, it is characterised in that the speed of spin coating described in step 4 is 300r/s.
9. according to the method for claim 1, it is characterised in that solvent flashing concretely comprises the following steps described in step 5：Using certainly
So air-dry, the solvent that the mode of hot plate heating or oven cooking cycle is volatilized in graphene.
10. according to the method described in claim 1-9 any one, it is characterised in that the graphene can both be used as GaN base
The contact electrode of device, light absorbing layer or current conducting layer can be used as again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710887677.5A CN107808819A (en) | 2017-09-27 | 2017-09-27 | A kind of liquid graphene is applied to the method for GaN base material and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710887677.5A CN107808819A (en) | 2017-09-27 | 2017-09-27 | A kind of liquid graphene is applied to the method for GaN base material and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107808819A true CN107808819A (en) | 2018-03-16 |
Family
ID=61591770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710887677.5A Pending CN107808819A (en) | 2017-09-27 | 2017-09-27 | A kind of liquid graphene is applied to the method for GaN base material and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107808819A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873031A (en) * | 2019-03-30 | 2019-06-11 | 华南理工大学 | A kind of graphene auxiliary GaN rectifier and preparation method thereof |
| CN111509083A (en) * | 2020-03-25 | 2020-08-07 | 深圳第三代半导体研究院 | Flexible photoelectric sensor based on GaN/rGO heterojunction and preparation method thereof |
| US10857774B2 (en) * | 2017-11-21 | 2020-12-08 | Vaon, Llc | Transferring graphitic thin films with a liquid gallium probe |
| CN113809222A (en) * | 2021-08-17 | 2021-12-17 | 靳志辉 | Graphene LED and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135520A (en) * | 2010-10-11 | 2011-07-27 | 清华大学 | Contact electrode for gallium nitride schottky biochemical sensor and preparation method thereof |
| CN102701600A (en) * | 2011-09-15 | 2012-10-03 | 京东方科技集团股份有限公司 | Method for preparing patterned graphene film and graphene film |
| CN103378223A (en) * | 2012-04-25 | 2013-10-30 | 清华大学 | Preparation method of epitaxial structure body |
| CN103741220A (en) * | 2014-01-20 | 2014-04-23 | 山东大学 | Method for growing high-quality gallium nitride (GaN) crystals by using graphene or graphene oxide |
-
2017
- 2017-09-27 CN CN201710887677.5A patent/CN107808819A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135520A (en) * | 2010-10-11 | 2011-07-27 | 清华大学 | Contact electrode for gallium nitride schottky biochemical sensor and preparation method thereof |
| CN102701600A (en) * | 2011-09-15 | 2012-10-03 | 京东方科技集团股份有限公司 | Method for preparing patterned graphene film and graphene film |
| CN103378223A (en) * | 2012-04-25 | 2013-10-30 | 清华大学 | Preparation method of epitaxial structure body |
| CN103741220A (en) * | 2014-01-20 | 2014-04-23 | 山东大学 | Method for growing high-quality gallium nitride (GaN) crystals by using graphene or graphene oxide |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10857774B2 (en) * | 2017-11-21 | 2020-12-08 | Vaon, Llc | Transferring graphitic thin films with a liquid gallium probe |
| CN109873031A (en) * | 2019-03-30 | 2019-06-11 | 华南理工大学 | A kind of graphene auxiliary GaN rectifier and preparation method thereof |
| CN111509083A (en) * | 2020-03-25 | 2020-08-07 | 深圳第三代半导体研究院 | Flexible photoelectric sensor based on GaN/rGO heterojunction and preparation method thereof |
| CN111509083B (en) * | 2020-03-25 | 2022-01-25 | 深圳第三代半导体研究院 | Flexible photoelectric sensor based on GaN/rGO heterojunction and preparation method thereof |
| CN113809222A (en) * | 2021-08-17 | 2021-12-17 | 靳志辉 | Graphene LED and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8658884B2 (en) | Solar cell including backside reflection layer composed of high-K dielectrics | |
| KR100997669B1 (en) | Silicon solar cell using screen printing and Manufacturing method of thereof | |
| CN107808819A (en) | A kind of liquid graphene is applied to the method for GaN base material and device | |
| CN105470320A (en) | Molybdenum disulfide/semiconductor heterojunction photoelectric detector and manufacturing method therefor | |
| CN103035496B (en) | A kind of growth GaN film on a si substrate and its preparation method and application | |
| CN104157720B (en) | A kind of silica-based avalanche photodetector of Graphene and preparation method of mixed structure | |
| CN110265504A (en) | A kind of UV photodetector and preparation method thereof | |
| Islam et al. | Chemical mist deposition of organic for efficient front-and back-PEDOT: PSS/crystalline Si heterojunction solar cells | |
| US20140014173A1 (en) | Solar Cell and Method for Manufacturing the Same | |
| CN104319320B (en) | A kind of LED chip with composite transparent electrode and preparation method thereof | |
| KR100994924B1 (en) | Solar cell and Method for manufacturing the same | |
| KR20090017812A (en) | Silicon solar cell and method thereof | |
| CN110190150A (en) | Based on selenizing palladium membranes/silicon cone package structure hetero-junctions broadband high-performance optical electric explorer and preparation method thereof | |
| CN105449059A (en) | GaN-based LED chip with current-expanding antireflection film layers, and preparation method for GaN-based LED chip | |
| CN104576713A (en) | Pn junction and preparation method | |
| CN108011045B (en) | Silicon micro-column array organic-inorganic hybrid solar cell and preparation method thereof | |
| KR20110008541A (en) | Sollar cell and fabrication method thereof | |
| KR101070024B1 (en) | Thin film type solar cell and method for manufacturing thin film type solar cell | |
| JP6072904B2 (en) | Photovoltaic element and manufacturing method thereof | |
| CN111081886B (en) | PIN diode based on gallium oxide perovskite multilayer stacked structure and preparation method thereof | |
| Cheng et al. | Fabrication and electrical, photosensitive properties of p-poly (9, 9-diethylfluorene)/n-silicon nanowire heterojunction | |
| CN112864328B (en) | Ag/C 60 Per P3HT/n-GaN/In planar heterojunction material and preparation method thereof | |
| CN109244207A (en) | A kind of LED chip and preparation method thereof | |
| CN111668326B (en) | Based on CuAlO 2 /SiC ultraviolet photodiode and preparation method | |
| CN109904250B (en) | Photodiode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180316 |
|
| RJ01 | Rejection of invention patent application after publication |