CN104393093B - High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene - Google Patents
High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene Download PDFInfo
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- CN104393093B CN104393093B CN201410641038.7A CN201410641038A CN104393093B CN 104393093 B CN104393093 B CN 104393093B CN 201410641038 A CN201410641038 A CN 201410641038A CN 104393093 B CN104393093 B CN 104393093B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000007547 defect Effects 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims description 16
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- -1 graphite Alkene Chemical class 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000004943 liquid phase epitaxy Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000005520 electrodynamics Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 6
- 230000004043 responsiveness Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a high-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene. According to the basic structure, the high-detectivity gallium-nitride-based Schottky ultraviolet detector sequentially comprises heavily-doped n type gallium nitride, slightly-doped n type gallium nitride, a silicon dioxide insulating layer, metal electrodes and a graphene thin film from bottom to top. The metal electrodes have the transparent and electric conduction properties and have the half-metallic property. Under the condition that the metal electrodes make direct contact with the slightly-doped n type GaN, the potential barriers of about 0.5 ev can be formed. The formed potential barriers show that the portions, close to the metal electrodes, in the GaN can be bent, so that a spatial charge area is formed, the electron holes are separated, and the photoproduction electrodynamic potential and the photoproduction current are generated. The responsibility of the detector can be greatly improved by introducing the surface defect method. The high-detectivity gallium-nitride-based Schottky ultraviolet detector is simple in structure and process and high in efficiency; thus, the electron hole pair separation capacity is increased, the internal quantum efficiency of the detector is increased, and the detectivity and responsibility are increased.
Description
Technical field
The present invention relates to a kind of new gallium nitride based schottky type UV detector structure and preparation method, belong to and partly lead
Body optoelectronic device technology field.
Background technology
Ultraviolet detection technology has many applications, can be used for polymeric materials resins solidification, purifying water process, flame detecting, life
Thing effect and environmental pollution supervision and ultraviolet optical storage etc..In terms of UV photodetector part, gan material has excellent
Performance: (1) gan does not absorb visible ray, the ultraviolet detector made can accomplish visible ray blind it is not necessary to filter system. (2)
Not needing to make shallow junction, so can greatly improve quantum efficiency. the capability of resistance to radiation of (3) gan is very strong, can be in exploration of the universe
Secret aspect plays a role.Gan ultraviolet detector is broadly divided into following several at present: such as photoconduction type, pn-junction type, pin type, Xiao
Special base junction type, msm type, heterojunction type.Wherein gan based Schottky structure UV detector is due to there being higher responsiveness, very fast
Response speed, process is simple, photosurface is big and be subject to very big attention.
Schottky type ultraviolet detector is the schottky junction being formed using semi-transparent metals and gan quasiconductor come work.By
Formed after schottky junction in semi-transparent metals with gan, the energy band of quasiconductor bends in the region near metal.With ni/au-
As a example ngan schottky junction, because the work function of metal is higher, the work function of quasiconductor is relatively low, quasiconductor can carry near metal
Part be bent upwards, and this part near quasiconductor surface.When ultraviolet lighting is mapped to semiconductor surface, can partly lead
Body surface face produces light absorbs, produces electron hole pair, electron hole pair is space-charge region in this region, curved due to can carry
Curly hair estranged from producing photogenerated current or photo-induced voltage.
Traditional Schottky type device is with based on semi-transparent metals, but the translucent gold usually as Schottky contacts
Belong to ni/au (2nm/2nm) light transmittance at 300nm and be only about 60%, detectivity is affected very serious.There are some researches show, gold
Belong to and often increase 1nm, its light transmittance declines 10%.And the work function of metal is fixed, it is difficult to change, only change metal material at present
Material is maximally efficient method.Even if but presently the most preferably metal material is still undesirable.We are making this device
Middle discovery, device surface defect can greatly improve the responsiveness (a/w) of device, and detectivity keeps constant or slightly carries
High.
Content of the invention
It is an object of the invention to provide a kind of structure improving Schottky type ultraviolet detector and preparation method thereof.By stone
This new material of black alkene is rationally applied in this panel detector structure, improves the light transmittance of window, improves Schottky barrier to increase
Strong its separates the ability of electron hole.Thus improving the detection performance of Schottky type detector.
A kind of structure of Schottky type ultraviolet detector that the present invention provides, its basic structure is followed successively by from the bottom up: weight
Doping N-shaped gallium nitride 101, lightly doped n-type gallium nitride 102, silicon dioxide insulating layer 103, metal electrode 104, graphene film
105.
In the present invention, metal electrode 104 has transparent, conductive property, and has Half-metallic, intrinsic in the case of work(
Function is 4.5ev.With lightly doped n-type gan directly contact in the case of, the potential barrier of about 0.5ev can be formed.The potential barrier of formation
Show as the internal band curvature of gan close to metal electrode 104, form space-charge region, can carry out separating electron hole, from
And produce photo-induced voltage and photogenerated current.The light transmittance of single-layer graphene is 97.7%, significantly larger than semimetal layer (60%).
The sheet resistance representative value of single-layer graphene is 300-1000 ohms/square although this value is more than semi-transparent metal layer (10-30 Europe
Nurse/square), but for this kind of ultraviolet detector, in the case of being typically employed in reversely, the sheet resistance of conductive layer is to its detection property
Can affect and little.The responsiveness of detector can be greatly improved by the method introducing surface defect.
The invention provides a kind of Schottky type Graphene-gan base ultraviolet detector and preparation method thereof,
Step 1, adopt metal organic chemical vapor deposition (or the technology such as molecular beam epitaxy system, liquid phase epitaxial technique)
Make highly doped n-type gallium nitride 101 in sapphire (or the substrate such as silicon chip, carborundum) successively, thickness is 1-2 micron；Gently mix
Miscellaneous N-shaped gallium nitride 102, thickness is 300-800 nanometer.
Step 2, etch epitaxial wafer surface using inductively coupled plasma etching, etching depth is 10-50nm, increases outer
Prolong piece surface defect density.Also or by modes such as surface corrosion, ion implantings increase epitaxial wafer surface defect density.
Step 3, epitaxial wafer is cleaned, photoetching, corrosion, forms mesa structure, that is, highly doped n-type gallium nitride 101, be lightly doped
N-shaped gallium nitride 102.
Step 4, growth layer of silicon dioxide, on 102, and carry out photoetching, corrosion, form silicon dioxide insulating layer
103, thickness is 100-500 nanometer.
Step 5, photoetching electrode pattern, sputtering or evaporation make metal electrode 104 (ti/au, cr/au), and thickness is 15-
50/30-3000 nanometer, on silicon dioxide insulating layer 103, that is, silicon dioxide insulating layer 103 is in lightly doped n-type gallium nitride
102nd, in the middle of metal electrode 104.
Step 6, transfer Graphene to device surface, the number of plies is 1-10 layer, photoetching Graphene figure, plasma etching stone
Black alkene, forms graphene film 105.Plasma etching gas are oxygen, and flow is 10-70l/min, and power is 50-100w,
Etch period 30s-600s.
Step 7, by thinning epitaxial wafer substrate, cut, sliver.
Wherein step 5 and step 6 can be exchanged.
Compared with prior art, the present invention has the advantages that.
1st, Graphene-gallium nitride ultraviolet detector mainly includes two parts, and a part is gallium nitride material, and another part is
Graphene film.Using the Half-metallic of Graphene, be combined with gallium nitride, form schottky junction, thus forming Built-in potential field,
Produce electron hole pair after gallium nitride absorbs photon near gallium nitride surface, electron hole pair is divided in Built-in potential field
From thus forming photoelectric current and build-up potential.This structural manufacturing process is simple, efficiency high；
2nd, mention in technical background, metal is difficult to change common function, and altogether function be impact such devices important because
Element.Graphene is a kind of monoatomic layer material, is easy to make its common function change by methods such as chemical modifications.Function changes altogether
Built-in potential field can be strengthened, thus increasing the separating power of electron hole pair, increasing detector internal quantum efficiency, increasing and detecting
Rate and responsiveness.
3rd, experiment finds, by increasing device surface damage, can increase device responsiveness, but be as leakage current and also have
Increased.By calculating, the detectivity of device does not have decline, has risen on the contrary.
Brief description
Fig. 1 is Graphene-gallium nitride schottky ultraviolet detector schematic diagram.
Fig. 2 is Graphene-gallium nitride schottky ultraviolet detector brightness i-v curve.
Fig. 3 is Graphene-surface erosion gallium nitride schottky ultraviolet detector brightness i-v curve.
In figure: 101, highly doped n-type gallium nitride；102nd, lightly doped n-type gallium nitride；103rd, silicon dioxide insulating layer；104、
Metal electrode；105th, graphene film.
Specific embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
As shown in figure 1, a kind of structure of Schottky type ultraviolet detector, its basic structure is followed successively by heavy doping from the bottom up
N-shaped gallium nitride 101, lightly doped n-type gallium nitride 102, silicon dioxide insulating layer 103, metal electrode 104, graphene film 105.
Its process for making is shown in the following example.
Embodiment 1
Step 1, adopt metal organic chemical vapor deposition (or the technology such as molecular beam epitaxy system, liquid phase epitaxial technique)
Make highly doped n-type gallium nitride 101, lightly doped n-type gallium nitride 102 in sapphire (or the substrate such as silicon chip, carborundum) successively.
Step 2, epitaxial wafer is cleaned, photoetching, corrosion, forms mesa structure, such as highly doped n-type gallium nitride 101, be lightly doped
N-shaped gallium nitride 102.
Step 3, growth layer of silicon dioxide, and carry out photoetching, corrosion, form silicon dioxide insulating layer 103.
Step 4, photoetching electrode pattern, sputtering or evaporation make metal electrode 104.
Step 5, transfer Graphene to device surface, photoetching Graphene figure, plasma etching Graphene, form graphite
Alkene thin film 105.Plasma etching gas are oxygen, and flow is 10-70l/min, and power is 50-100w, etch period 30s-
600s.Graphene and gallium nitride contact area, that is, photosensitive region size is 1 × 1mm2.
Step 6, by thinning epitaxial wafer substrate, cut, sliver.
Through Semiconductor institute, Chinese Academy of Sciences's ultraviolet detection test system and test, 365nm wavelength response degree is 0.18a/w.Accordingly
Spectrum is shown in accompanying drawing 2.
Through test in 5.6w/cm2, under the parallel ultraviolet of dominant wavelength 254nm is irradiated, in -6v, specific detecivity is
1.05e12cm hz1/2w-1.
Embodiment 2
Step 1, adopt metal organic chemical vapor deposition (or the technology such as molecular beam epitaxy system, liquid phase epitaxial technique)
Make highly doped n-type gallium nitride 101, lightly doped n-type gallium nitride 102 in sapphire (or the substrate such as silicon chip, carborundum) successively.
Step 2, etch epitaxial wafer surface using inductively coupled plasma etching, etching depth is 10-50nm, increases outer
Prolong piece surface defect density.
Step 3, epitaxial wafer is cleaned, photoetching, corrosion, forms mesa structure, such as highly doped n-type gallium nitride 101, be lightly doped
N-shaped gallium nitride 102.
Step 4, growth layer of silicon dioxide, and carry out photoetching, corrosion, form silicon dioxide insulating layer 103.
Step 5, photoetching electrode pattern, sputtering or evaporation make metal electrode 104.
Step 6, transfer Graphene to device surface, photoetching Graphene figure, plasma etching Graphene, form graphite
Alkene thin film 105.Plasma etching gas are oxygen, and flow is 10-70l/min, and power is 50-100w, etch period 30s-
600s.Graphene and gallium nitride contact area, that is, photosensitive region size is 1 × 1mm2.
Step 7, by thinning epitaxial wafer substrate, cut, sliver.
Through test in 5.6w/cm2, under the parallel ultraviolet of dominant wavelength 254nm is irradiated, in -6v, responsiveness is 357a/
w.Specific detecivity is 1.07e12cm hz1/2w-1.Corresponding spectrum is shown in accompanying drawing 3.
Claims (1)
1. a kind of preparation method of the high detectivity gallium nitride based schottky type ultraviolet detector of application Graphene, its feature exists
In: the implementing procedure of the method is as follows,
Step 1, using metal organic chemical vapor deposition or molecular beam epitaxy system or liquid phase epitaxy in sapphire or silicon
Highly doped n-type gallium nitride (101) is made on piece or carborundum, thickness is 1 micron -2 microns successively；Lightly doped n-type gallium nitride
(102), thickness is 300 nanometers -800 nanometers；
Step 2, using inductively coupled plasma etching etch epitaxial wafer surface, etching depth be 10-50nm, increase epitaxial wafer
Surface defect density；Also or by surface corrosion, ion implanting mode increase epitaxial wafer surface defect density；
Step 3, epitaxial wafer is cleaned, photoetching, corrosion, forms mesa structure, that is, highly doped n-type gallium nitride (101), n is lightly doped
Type gallium nitride (102)；
Step 4, growth layer of silicon dioxide, on lightly doped n-type gallium nitride (102), and carry out photoetching, corrosion, form two
Insulating layer of silicon oxide (103), thickness is 100-500 nanometer；
Step 5, photoetching electrode pattern, sputtering or evaporation make metal electrode (104), and thickness is 15 nanometers -50 nanometers or 30
- 3000 nanometers of nanometer, on silicon dioxide insulating layer (103), that is, silicon dioxide insulating layer (103) nitrogenizes in lightly doped n-type
In the middle of gallium (102), metal electrode (104)；
Step 6, transfer Graphene to device surface, the number of plies is 1-10 layer, photoetching Graphene figure, plasma etching graphite
Alkene, forms graphene film (105)；Plasma etching gas are oxygen, and flow is 10-70l/min, and power is 50-100w,
Etch period 30s-600s；
Step 7, by thinning epitaxial wafer substrate, cut, sliver；
Wherein step 5 and step 6 can be exchanged；
The basic structure of this ultraviolet detector is followed successively by highly doped n-type gallium nitride (101), lightly doped n-type gallium nitride from the bottom up
(102), silicon dioxide insulating layer (103), metal electrode (104), graphene film (105).
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104074A (en) * | 1997-12-11 | 2000-08-15 | Apa Optics, Inc. | Schottky barrier detectors for visible-blind ultraviolet detection |
| CN1641327A (en) * | 2004-01-06 | 2005-07-20 | 元砷光电科技股份有限公司 | Ultraviolet detector |
| CN1677694A (en) * | 2005-04-27 | 2005-10-05 | 中国科学院上海技术物理研究所 | Gallium nitride ultraviolet detector |
| CN1681134A (en) * | 2004-04-07 | 2005-10-12 | 中国科学院半导体研究所 | Ultraviolet detector with gallium nitride Schottky structure and production thereof |
| CN1877868A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Gallium nitride-based MSM ultraviolet detector for reducing surface state effect |
| CN101101935A (en) * | 2006-07-06 | 2008-01-09 | 中国科学院半导体研究所 | Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
| CN102903617A (en) * | 2012-10-22 | 2013-01-30 | 西安电子科技大学 | GaN substrate-based graphene CVD direct epitaxial growth method and manufactured device |
| CN203760501U (en) * | 2014-03-31 | 2014-08-06 | 中国电子科技集团公司第十三研究所 | GaN-based plasmon detector |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273392A (en) * | 2002-03-14 | 2003-09-26 | Mitsubishi Cable Ind Ltd | GaN SYSTEM SEMICONDUCTOR PHOTO ACCEPTANCE DEVICE |
| TW591217B (en) * | 2003-07-17 | 2004-06-11 | South Epitaxy Corp | UV detector |
-
2014
- 2014-11-13 CN CN201410641038.7A patent/CN104393093B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104074A (en) * | 1997-12-11 | 2000-08-15 | Apa Optics, Inc. | Schottky barrier detectors for visible-blind ultraviolet detection |
| CN1641327A (en) * | 2004-01-06 | 2005-07-20 | 元砷光电科技股份有限公司 | Ultraviolet detector |
| CN1681134A (en) * | 2004-04-07 | 2005-10-12 | 中国科学院半导体研究所 | Ultraviolet detector with gallium nitride Schottky structure and production thereof |
| CN1677694A (en) * | 2005-04-27 | 2005-10-05 | 中国科学院上海技术物理研究所 | Gallium nitride ultraviolet detector |
| CN1877868A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Gallium nitride-based MSM ultraviolet detector for reducing surface state effect |
| CN101101935A (en) * | 2006-07-06 | 2008-01-09 | 中国科学院半导体研究所 | Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
| CN102903617A (en) * | 2012-10-22 | 2013-01-30 | 西安电子科技大学 | GaN substrate-based graphene CVD direct epitaxial growth method and manufactured device |
| CN203760501U (en) * | 2014-03-31 | 2014-08-06 | 中国电子科技集团公司第十三研究所 | GaN-based plasmon detector |
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| US10121926B2 (en) | 2016-08-22 | 2018-11-06 | Shahid Rajaee Teacher Training University | Graphene-based detector for W-band and terahertz radiations |
| CN107195724A (en) * | 2017-05-16 | 2017-09-22 | 江南大学 | A kind of method that application Graphene electrodes prepare AlGaN Schottky solar blind ultraviolet detectors on GaN self-supported substrates |
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