CN104779315A - Graphene/indium phosphide photoelectric detector and preparation method thereof - Google Patents
Graphene/indium phosphide photoelectric detector and preparation method thereof Download PDFInfo
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- CN104779315A CN104779315A CN201510162728.9A CN201510162728A CN104779315A CN 104779315 A CN104779315 A CN 104779315A CN 201510162728 A CN201510162728 A CN 201510162728A CN 104779315 A CN104779315 A CN 104779315A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 84
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 79
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims description 33
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- 230000008859 change Effects 0.000 description 7
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a graphene/indium phosphide photoelectric detector. The photoelectric detector sequentially comprises an indium phosphide layer, a graphene layer and a surface electrode from bottom to top or sequentially comprises an indium phosphide layer, an insulation layer and a surface electrode from bottom to top as well as a graphene layer arranged on the indium phosphide layer and contacted with the surface electrode. A preparation method of the photoelectric detector comprises steps as follows: transferring graphene to a clean indium phosphide sheet, and then producing the surface electrode on the graphene layer; or growing the insulation layer on the clean indium phosphide sheet, then producing the surface electrode on the insulation layer, finally, transferring the graphene to indium phosphide, and enabling the graphene to be contacted with the surface electrode. The graphene/indium phosphide photoelectric detector uses the high carrier mobility and the good photoelectric response of the graphene material, combines excellent semiconductor photoelectric properties of the indium phosphide, and is sensitive in photoresponse, high in responsivity and simple in preparation process.
Description
Technical field
The present invention relates to a kind of photodetector and preparation method thereof, especially a kind of Graphene/indium phosphide photodetector and preparation method thereof, belongs to photoelectric device technical field.
Background technology
Graphene tow-dimensions atom material to be found and after preparing for 2004 first, more research shows that grapheme material has excellent electricity, optics and engineering properties, as the photoresponse in high carrier mobility, very wide wave-length coverage, high Young's modulus and pliability etc.The character of these uniquenesses makes Graphene likely be widely used in photoelectron technical field, comprises photodetector, solar cell etc.In recent years, many researchers carry out the application study of graphene optical detector, and its advantage to realize ultrafast and more broadband spectral response.But because Graphene only has the thickness of atomic size, the light ratio of absorption is less (~ 2.3%), have impact on the responsiveness of optical detection.Find suitable material be combined with Graphene or design new structure, strengthening its optical detection response, is the emphasis of investigation and application.
Summary of the invention
The object of the present invention is to provide a kind of responsiveness high, preparation technology's simple Graphene/indium phosphide photodetector and preparation method thereof.
Graphene of the present invention/indium phosphide photodetector can adopt the following two kinds technical scheme to realize:
Technical scheme one
Graphene of the present invention/indium phosphide photodetector, has the phosphorization phosphide indium layer of p-type or N-shaped doping, graphene layer and surface electrode from bottom to top successively;
The method preparing this photodetector is: be transferred to by Graphene in clean p-type or N-shaped doping phosphatization indium sheet and obtain graphene layer, then make surface electrode on graphene layer.
Technical scheme two
Graphene of the present invention/indium phosphide photodetector, there are the phosphorization phosphide indium layer of p-type or N-shaped doping, insulating barrier and surface electrode from bottom to top successively, insulating barrier area accounts for the 5-90% of phosphorization phosphide indium layer area, surface electrode area is less than insulating barrier area, described photodetector is also provided with graphene layer, graphene layer is arranged on phosphorization phosphide indium layer, and contacts with surface electrode.
The method preparing this photodetector is: in the p-type or N-shaped doping phosphatization indium sheet of cleaning, grow insulating barrier, and the reserved area making graphene layer, surface electrode is made again on above-mentioned insulating barrier, finally Graphene is transferred to above-mentioned reserved area place, and Graphene is contacted with surface electrode.
In the technical program, described insulating barrier can be silica, silicon nitride, silicon oxynitride, aluminium oxide or boron nitride, and its thickness is generally 1-200nm.
In above-mentioned two kinds of technical schemes, in described graphene layer, Graphene is generally 1 layer to 10 layers.
Described surface electrode is generally one or several the combination electrode in gold, palladium, silver, titanium, chromium, nickel, platinum and aluminium.
Traditional semiconductor material body, especially Ⅲ-Ⅴ compound semiconductor, have excellent photoelectric property.Graphene is combined with semi-conducting material, if both Fermi levels exist larger difference, can form schottky junction.Under illumination, photon absorbs primarily of semi-conducting material and produces electron hole pair, and under the effect of junction barrier, electronics or hole are injected in Graphene.Graphene carriers quantity changes thereupon, and its resistivity also can change.Extraneous light intensity changes, and injected electrons or hole concentration also change.The resistance change of Graphene can reflect the probe response situation of illumination to external world.
In addition, the Fermi level of Graphene can be regulated by doping or applied voltage, and the potential barrier also corresponding change of Schottky, the photodetection performance of device also can regulate.In Ⅲ-Ⅴ compound semiconductor, indium phosphide is direct band gap material, and its energy gap, closest to the optimal value (1.34ev) of solar spectrum energy, has good spectral absorption and response.
In sum, the beneficial effect that the present invention has is: compared with traditional photodetector, Graphene of the present invention/indium phosphide photodetector utilizes the excellent photoelectric property of the high carrier mobility of Graphene and good photoelectric respone and indium phosphide, has better light absorption and optical detection response performance; And its preparation technology is simple, be easy to realize.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of structure of Graphene/indium phosphide photodetector;
Fig. 2 is the schematic diagram of the another kind of structure of Graphene/indium phosphide photodetector;
Fig. 3 is the curent change curve of Graphene/indium phosphide photodetector under optical switch status that embodiment 1 obtains.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
With reference to Fig. 1, Graphene of the present invention/indium phosphide photodetector, has the phosphorization phosphide indium layer 1 of p-type or N-shaped doping, graphene layer 2 and surface electrode 3 from bottom to top successively; Or as shown in Figure 2, there are the phosphorization phosphide indium layer 1 of p-type or N-shaped doping, insulating barrier 4 and surface electrode 3 from bottom to top successively, insulating barrier 4 area accounts for the 5-90% of phosphorization phosphide indium layer 1 area, surface electrode 3 area is less than insulating barrier 4 area, described photodetector is also provided with graphene layer 2, graphene layer 2 is arranged on phosphorization phosphide indium layer 1, and contacts with surface electrode 3.
Embodiment 1
1) p-type phosphatization indium sheet sample is successively immersed in acetone, aqueous isopropanol carry out surface clean;
2) single-layer graphene is transferred in the phosphatization indium sheet of cleaning;
3) on Graphene, utilize thermal evaporation process to deposit 100nm gold electrode, obtain Graphene/indium phosphide photodetector.
Making alive between two surface electrodes, by the change of testing photoelectronic detector electric current under different light, can reflect its response to different spectrum and light intensity.When the photodetector that namely Fig. 3 obtains this example adds 5V voltage, do not adding the current value change curve of interval follow-on test under illumination and the illumination of 1 standard sunlight, can find out that the photodetector photoresponse that this example obtains is sensitive, responsiveness is high.
Embodiment 2
1) N-shaped phosphatization indium sheet is successively immersed in acetone, aqueous isopropanol carry out surface clean;
2) 10 layer graphenes are transferred in the phosphatization indium sheet of cleaning;
3) on Graphene, utilize thermal evaporation process to deposit 200nm nickel/gold electrode, obtain Graphene/indium phosphide photodetector.
Embodiment 3
1) N-shaped phosphatization indium sheet is successively immersed in acetone, aqueous isopropanol carry out surface clean;
2) 3 layer graphenes are transferred in the phosphatization indium sheet of cleaning;
3) silk screen printing 500nm silver electrode on Graphene, obtains Graphene/indium phosphide photodetector.
Embodiment 4
1) p-type phosphatization indium sheet is successively immersed in acetone, aqueous isopropanol carry out surface clean;
2) 6 layer graphenes are transferred in the phosphatization indium sheet of cleaning;
3) magnetron sputtering 20nm titanium/nickel electrode on Graphene, obtains Graphene/indium phosphide photodetector.
Embodiment 5
1) p-type phosphatization indium sheet is successively immersed in acetone, aqueous isopropanol carry out surface clean;
2) mask electron-beam evaporation silica 80nm in phosphatization indium sheet, it is 5% in surface of indium phosphide area coverage ratio;
3) electron-beam evaporation 40nm gold electrode on silica, gold electrode area is less than silica area;
4) single-layer graphene is transferred in the phosphatization indium sheet of evaporation electrode, and Graphene contacts with gold electrode, obtain Graphene/indium phosphide photodetector.
Embodiment 6
1) N-shaped phosphatization indium sheet is successively immersed in acetone, aqueous isopropanol carry out surface clean;
2) mask electron-beam evaporation silicon nitride 1nm in phosphatization indium sheet, it is 80% in surface of indium phosphide area coverage ratio;
3) electron-beam evaporation 20nm silver electrode on silicon nitride, silver electrode area is less than silicon nitride area;
4) 8 layer graphenes are transferred in the phosphatization indium sheet of evaporation electrode, and Graphene contacts with silver electrode, obtain Graphene/indium phosphide photodetector.
Embodiment 7
1) p-type phosphatization indium sheet is successively immersed in acetone, aqueous isopropanol carry out surface clean;
2) mask electron-beam evaporation aluminium oxide 200nm in phosphatization indium sheet, it is 90% in surface of indium phosphide area coverage ratio;
3) electron-beam evaporation 40nm gold/palladium electrode on alumina, the area of gold/palladium electrode is less than the area of aluminium oxide;
4) 3 layer graphenes are transferred in the phosphatization indium sheet of evaporation electrode, and Graphene contacts with gold/palladium electrode, obtain Graphene/indium phosphide photodetector.
Claims (6)
1. Graphene/indium phosphide photodetector, is characterized in that the phosphorization phosphide indium layer (1), graphene layer (2) and the surface electrode (3) that have p-type or N-shaped to adulterate successively from bottom to top; Or there are the phosphorization phosphide indium layer (1) of p-type or N-shaped doping, insulating barrier (4) and surface electrode (3) from bottom to top successively, insulating barrier (4) area accounts for the 5-90% of phosphorization phosphide indium layer (1) area, surface electrode (3) area is less than insulating barrier (4) area, described photodetector is also provided with graphene layer (2), graphene layer (2) is arranged on phosphorization phosphide indium layer (1), and contacts with surface electrode (3).
2. Graphene according to claim 1/indium phosphide photodetector, is characterized in that in described graphene layer (2), Graphene is 1 layer to 10 layers.
3. Graphene according to claim 1/indium phosphide photodetector, is characterized in that described insulating barrier (4) is silica, silicon nitride, silicon oxynitride, aluminium oxide or boron nitride.
4. Graphene according to claim 1/indium phosphide photodetector, is characterized in that the thickness of described insulating barrier (4) is 1-200nm.
5. Graphene according to claim 1/indium phosphide photodetector, is characterized in that described surface electrode (3) is one or several the combination electrode in gold, palladium, silver, titanium, chromium, nickel, platinum and aluminium.
6. the method for the Graphene/indium phosphide photodetector of preparation as described in any one of claim 1-5, is characterized in that comprising the steps:
Graphene is transferred on clean p-type or N-shaped doping phosphatization indium sheet (1) and obtains graphene layer (2), then make surface electrode (3) on graphene layer (2);
Or in the p-type or N-shaped doping phosphatization indium sheet (1) of cleaning, grow insulating barrier (4), and the reserved area making graphene layer (2), surface electrode (3) is made again on above-mentioned insulating barrier (4), finally Graphene is transferred to above-mentioned reserved area place, and Graphene is contacted with surface electrode (3).
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| CN201510162728.9A CN104779315A (en) | 2015-04-08 | 2015-04-08 | Graphene/indium phosphide photoelectric detector and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106057961A (en) * | 2016-06-28 | 2016-10-26 | 兰建龙 | Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof |
| CN106505115A (en) * | 2016-10-17 | 2017-03-15 | 浙江大学 | Quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet detector and preparation method thereof |
| CN107437568A (en) * | 2016-05-26 | 2017-12-05 | 中国科学院物理研究所 | A kind of photovoltaic devices and a kind of method for producing photovoltaic effect |
| CN108075009A (en) * | 2016-11-09 | 2018-05-25 | 香港生产力促进局 | Graphene infrared sensor based on photonic crystal photoresponse enhancing technology and preparation method thereof |
| CN110783423A (en) * | 2019-09-09 | 2020-02-11 | 浙江大学 | Graphene/aluminum oxide/gallium arsenide terahertz detector and manufacturing method thereof |
| CN114784125A (en) * | 2022-03-25 | 2022-07-22 | 国科大杭州高等研究院 | Asymmetric induction room-temperature high-sensitivity photoelectric detector and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107437568A (en) * | 2016-05-26 | 2017-12-05 | 中国科学院物理研究所 | A kind of photovoltaic devices and a kind of method for producing photovoltaic effect |
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| CN106057961A (en) * | 2016-06-28 | 2016-10-26 | 兰建龙 | Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof |
| CN106505115A (en) * | 2016-10-17 | 2017-03-15 | 浙江大学 | Quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet detector and preparation method thereof |
| CN108075009A (en) * | 2016-11-09 | 2018-05-25 | 香港生产力促进局 | Graphene infrared sensor based on photonic crystal photoresponse enhancing technology and preparation method thereof |
| CN110783423A (en) * | 2019-09-09 | 2020-02-11 | 浙江大学 | Graphene/aluminum oxide/gallium arsenide terahertz detector and manufacturing method thereof |
| CN114784125A (en) * | 2022-03-25 | 2022-07-22 | 国科大杭州高等研究院 | Asymmetric induction room-temperature high-sensitivity photoelectric detector and preparation method thereof |
| CN114784125B (en) * | 2022-03-25 | 2024-04-02 | 国科大杭州高等研究院 | Asymmetric induction room temperature high-sensitivity photoelectric detection device and preparation method thereof |
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