CN104241415A - Graphene/gallium arsenide solar cell and manufacturing method thereof - Google Patents
Graphene/gallium arsenide solar cell and manufacturing method thereof Download PDFInfo
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- CN104241415A CN104241415A CN201410456736.XA CN201410456736A CN104241415A CN 104241415 A CN104241415 A CN 104241415A CN 201410456736 A CN201410456736 A CN 201410456736A CN 104241415 A CN104241415 A CN 104241415A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 66
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 62
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 13
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a graphene/gallium arsenide solar cell and a manufacturing method thereof. The graphene/gallium arsenide solar cell comprises a back face electrode, an n-type doped or p-type doped gallium arsenide layer, a graphene layer and front face electrodes from top to bottom in sequence, wherein one to 10 layers of graphene is arranged. The manufacturing method comprises the steps that firstly, the back face electrode is manufactured on one face of a gallium arsenide piece; secondly, surface chemical cleaning and drying are conducted; thirdly, the graphene is transferred to the other face of the gallium arsenide piece; fourthly, the front face electrodes are manufactured on the graphene. According to the graphene/gallium arsenide solar cell, the high carrier mobility, the high light transmission and the high conductivity of graphene materials are used, the excellent semiconductor property of gallium arsenide is combined, and thus the solar cell high in conversion efficiency can be easily manufactured on the basis of low cost and the simple technology.
Description
Technical field
The present invention relates to a kind of solar cell and manufacture method thereof, particularly relate to a kind of Graphene/gallium arsenide solar cell and manufacture method thereof, belong to technical field of solar.
Background technology
In recent years, solar cell just plays more and more important effect as a kind of new green power in the sustainable development of the mankind.Wherein, silica-based solar cell, the particularly share of crystal-silicon solar cell occuping market ~ 90%.But compared with conventional power generation usage, solar cell cost of electricity-generating is still higher, limits large-area applications.One of reason that solar cell cost of electricity-generating is higher is that battery manufacture cost is higher, and another one main cause is that its electricity conversion is lower.
Since grapheme material 2004 first by stable preparing after, increasing research finds that grapheme material has excellent electricity, optical property, as high carrier mobility, Young's modulus etc. that high printing opacity is new, high.The character of these uniquenesses makes Graphene likely be widely used in field of photovoltaic power generation.At present, the heterojunction that existing researcher utilizes Graphene and silicon materials to be formed makes solar cell, records the highest transformation efficiency 14.5%.This efficiency become to produce efficiency 18.5% ~ 20.0% with current crystal-silicon solar cell monocrystalline silicon main flow compared with also lower.Corresponding solar cell application, silicon materials energy gap is narrower, is indirect forbidden band simultaneously, is not optimal basic material.GaAs has more suitable energy gap, is also direct band gap material, also has the carrier mobility higher than silicon simultaneously, and therefore, space-efficient rate solar cell generally adopts GaAs material manufacture.But traditional gallium arsenide solar cell complicated process of preparation, with high costs, be difficult to obtain and promote on a large scale.
Summary of the invention
The object of the present invention is to provide that a kind of electricity conversion is high, technique is simple and lower-cost Graphene/gallium arsenide solar cell and manufacture method thereof.
Graphene/gallium arsenide solar cell of the present invention has gallium arsenide layer, graphene layer and the front electrode that backplate, N-shaped adulterate or p-type is adulterated from bottom to top successively, and wherein the Graphene of graphene layer is 1 ~ 10 layer.
The preparation method of Graphene/gallium arsenide solar cell of the present invention, comprises the steps:
1) backplate is made in the one side of the gallium arsenide film that N-shaped adulterates or p-type is adulterated; Then put into chemical cleaning solution immersion and carry out surface clean in 1 ~ 30 minute, dry up after taking-up;
2) Graphene is transferred on another face of above-mentioned gallium arsenide film;
3) on Graphene, front electrode is made.
Graphene described in technique scheme can be 1 ~ 10 layer.
Step 1) described in chemical cleaning solution can be HCl, HNO
3, H
2sO
4, KOH or NaOH the aqueous solution.
Described backplate can be gold, palladium, silver, titanium, copper, platinum, chromium, nickel, ITO(tin indium oxide) and AZO(aluminium-doped zinc oxide) in the combination electrode of one or more.
Described front electrode also can be gold, palladium, silver, titanium, copper, platinum, chromium, nickel, ITO(tin indium oxide) and AZO(aluminium-doped zinc oxide) in the combination electrode of one or more.
The beneficial effect that the present invention has compared with background technology is:
Compared to graphene/silicon solar cell, Graphene/gallium arsenide solar cell of the present invention utilizes the high carrier mobility of grapheme material, high light transmittance and high conductivity, and is conducive to obtaining higher open circuit voltage and transformation efficiency due to the impact of Graphene/GaAs band structure; And the preparation technology of Graphene/gallium arsenide solar cell of the present invention is simple, cost is lower, is conducive to commercial application.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of Graphene/gallium arsenide solar cell;
Fig. 2 be Graphene/GaAs (N-shaped doping) solar cell can be with schematic diagram.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.
With reference to Fig. 1, Graphene/gallium arsenide solar cell of the present invention has gallium arsenide layer 2, graphene layer 3 and the front electrode 4 that backplate 1, N-shaped adulterate or p-type is adulterated from bottom to top successively, and wherein the Graphene of graphene layer is 1 ~ 10 layer.
Embodiment 1:
1) electron-beam vapor deposition method deposited gold electrode is utilized in the one side of the gallium arsenide film of N-shaped doping; Then immerse in the NaOH aqueous solution of mass concentration 10% and carry out surface clean in 1 minute, take out afterwards and dry up;
2) single-layer graphene is transferred on another face of the gallium arsenide film of surface cleaning;
3) on Graphene, utilize thermal evaporation process depositing silver electrode, obtain Graphene/gallium arsenide solar cell.
The schottky junction that the general principle of the Graphene/gallium arsenide solar cell finally obtained is formed based on Graphene and GaAs, Graphene as shown in Figure 2/N-shaped undoped gallium arsenide solar cell schematic diagram can be with visible, GaAs has suitable energy gap and converts solar energy into electrical energy, the work function of Graphene is greater than the work function of the GaAs of N-shaped doping, will form schottky junction when two materials contact, junction barrier is determined by the difference of the work function of two materials.
Embodiment 2:
1) magnetron sputtering deposition palladium electrode is utilized in the one side of the gallium arsenide film of p-type doping; Then immerse in the HCl aqueous solution of mass concentration 20% and carry out surface clean in 15 minutes, take out afterwards and dry up;
2) 10 layer graphenes are transferred on another face of the gallium arsenide film of surface cleaning;
4) on Graphene, utilize thermal evaporation process nickel deposited electrode, obtain Graphene/gallium arsenide solar cell.
Embodiment 3:
1) pulsed laser deposition chromium/Ti electrode is utilized in the one side of the gallium arsenide film of N-shaped doping; Then the HNO of mass concentration 10% is immersed
3within in the aqueous solution 30 minutes, carry out surface clean, take out afterwards and dry up;
2) 2 layer graphenes are transferred on another face of the gallium arsenide film of surface cleaning;
3) silk screen printing silver electrode on Graphene, obtains Graphene/gallium arsenide solar cell.
Embodiment 4
1) thermal evaporation process deposition chromium/gold electrode is utilized in the one side of the gallium arsenide film of N-shaped doping; Then the H of mass concentration 10% is immersed
2sO
4within in the aqueous solution 20 minutes, carry out surface clean, take out afterwards and dry up;
2) 6 layer graphenes are transferred on another face of the gallium arsenide film of surface cleaning;
3) magnetron sputtering titanium/nickel electrode on Graphene, obtains Graphene/gallium arsenide solar cell.
Embodiment 5
1) magnetron sputtering deposition copper/ITO electrode is utilized in the one side of the gallium arsenide film of N-shaped doping; Then immerse in the KOH aqueous solution of mass concentration 10% and carry out surface clean in 20 minutes, take out afterwards and dry up;
2) 8 layer graphenes are transferred on another face of the gallium arsenide film of surface cleaning;
3) magnetron sputtering AZO/ platinum electrode on Graphene, obtains Graphene/gallium arsenide solar cell.
Embodiment 6
1) magnetron sputtering deposition AZO/ platinum electrode is utilized in the one side of the gallium arsenide film of N-shaped doping; Then immerse in the HCl aqueous solution of mass concentration 30% and carry out surface clean in 10 minutes, take out afterwards and dry up;
2) single-layer graphene is transferred on another face of the gallium arsenide film of surface cleaning;
3) magnetron sputtering copper/ITO electrode on Graphene, obtains Graphene/gallium arsenide solar cell.
Claims (6)
1. Graphene/gallium arsenide solar cell, it is characterized in that there be gallium arsenide layer (2), graphene layer (3) and the front electrode (4) that backplate (1), N-shaped adulterate or p-type is adulterated from bottom to top successively, wherein the Graphene of graphene layer (3) is 1 ~ 10 layer.
2. prepare the method for Graphene/gallium arsenide solar cell as claimed in claim 1, it is characterized in that comprising the steps:
1) backplate is made in the one side of the gallium arsenide film that N-shaped adulterates or p-type is adulterated; Then put into chemical cleaning solution immersion and carry out surface clean in 1 ~ 30 minute, dry up after taking-up;
2) Graphene is transferred on another face of above-mentioned gallium arsenide film;
3) on Graphene, front electrode is made.
3. the preparation method of Graphene/gallium arsenide solar cell according to claim 2, is characterized in that described Graphene is 1 ~ 10 layer.
4. the preparation method of Graphene/gallium arsenide solar cell according to claim 2, is characterized in that described backplate is the combination electrode of one or more in gold, palladium, silver, titanium, copper, platinum, chromium, nickel, ITO and AZO.
5. the preparation method of Graphene/gallium arsenide solar cell according to claim 2, is characterized in that described chemical cleaning solution is HCl, HNO
3, H
2sO
4, KOH or NaOH the aqueous solution.
6. the preparation method of Graphene/gallium arsenide solar cell according to claim 2, is characterized in that described front electrode is the combination electrode of one or more in gold, palladium, silver, titanium, copper, platinum, chromium, nickel, ITO and AZO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410456736.XA CN104241415A (en) | 2014-09-10 | 2014-09-10 | Graphene/gallium arsenide solar cell and manufacturing method thereof |
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|---|---|---|---|
| CN201410456736.XA CN104241415A (en) | 2014-09-10 | 2014-09-10 | Graphene/gallium arsenide solar cell and manufacturing method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576804A (en) * | 2014-12-29 | 2015-04-29 | 浙江大学 | Graphene/indium phosphide solar cell and preparation method thereof |
| CN104576787A (en) * | 2014-12-29 | 2015-04-29 | 浙江大学 | Electric field controlled graphene/gallium arsenide solar cell and preparation method thereof |
| CN104779315A (en) * | 2015-04-08 | 2015-07-15 | 浙江大学 | Graphene/indium phosphide photoelectric detector and preparation method thereof |
| CN106409988A (en) * | 2016-12-09 | 2017-02-15 | 中国科学院微电子研究所 | Preparation method of graphene/gallium arsenide solar cell |
| CN106449790A (en) * | 2016-12-09 | 2017-02-22 | 中国科学院微电子研究所 | Graphene/gallium arsenide solar cell |
| CN107437568A (en) * | 2016-05-26 | 2017-12-05 | 中国科学院物理研究所 | A kind of photovoltaic devices and a kind of method for producing photovoltaic effect |
| WO2019227825A1 (en) * | 2018-05-30 | 2019-12-05 | 华南理工大学 | High-performance quantum dot intermediate band graphene-schottky junction solar cell and preparation thereof |
| CN110783423A (en) * | 2019-09-09 | 2020-02-11 | 浙江大学 | Graphene/aluminum oxide/gallium arsenide terahertz detector and manufacturing method thereof |
| CN113690341A (en) * | 2021-07-26 | 2021-11-23 | 华南理工大学 | Graphene/gallium arsenide solar cell with array micro-nano lens structure and preparation method thereof |
| CN114373865A (en) * | 2021-12-14 | 2022-04-19 | 华南理工大学 | perovskite/GaAs unijunction hybrid solar cell and preparation method thereof |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576787A (en) * | 2014-12-29 | 2015-04-29 | 浙江大学 | Electric field controlled graphene/gallium arsenide solar cell and preparation method thereof |
| CN104576804A (en) * | 2014-12-29 | 2015-04-29 | 浙江大学 | Graphene/indium phosphide solar cell and preparation method thereof |
| CN104576787B (en) * | 2014-12-29 | 2017-03-22 | 浙江大学 | Electric field controlled graphene/gallium arsenide solar cell and preparation method thereof |
| CN104779315A (en) * | 2015-04-08 | 2015-07-15 | 浙江大学 | Graphene/indium phosphide photoelectric detector and preparation method thereof |
| CN107437568A (en) * | 2016-05-26 | 2017-12-05 | 中国科学院物理研究所 | A kind of photovoltaic devices and a kind of method for producing photovoltaic effect |
| CN107437568B (en) * | 2016-05-26 | 2019-04-05 | 中国科学院物理研究所 | A kind of photovoltaic devices and a kind of method for generating photovoltaic effect |
| CN106409988A (en) * | 2016-12-09 | 2017-02-15 | 中国科学院微电子研究所 | Preparation method of graphene/gallium arsenide solar cell |
| CN106409988B (en) * | 2016-12-09 | 2018-02-02 | 中国科学院微电子研究所 | Preparation method of graphene/gallium arsenide solar cell |
| CN106449790A (en) * | 2016-12-09 | 2017-02-22 | 中国科学院微电子研究所 | Graphene/gallium arsenide solar cell |
| WO2019227825A1 (en) * | 2018-05-30 | 2019-12-05 | 华南理工大学 | High-performance quantum dot intermediate band graphene-schottky junction solar cell and preparation thereof |
| CN110783423A (en) * | 2019-09-09 | 2020-02-11 | 浙江大学 | Graphene/aluminum oxide/gallium arsenide terahertz detector and manufacturing method thereof |
| CN113690341A (en) * | 2021-07-26 | 2021-11-23 | 华南理工大学 | Graphene/gallium arsenide solar cell with array micro-nano lens structure and preparation method thereof |
| CN114373865A (en) * | 2021-12-14 | 2022-04-19 | 华南理工大学 | perovskite/GaAs unijunction hybrid solar cell and preparation method thereof |
| CN114373865B (en) * | 2021-12-14 | 2023-08-22 | 华南理工大学 | perovskite/GaAs single junction hybrid solar cell and preparation method thereof |
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