CN107437568B - A kind of photovoltaic devices and a kind of method for generating photovoltaic effect - Google Patents
A kind of photovoltaic devices and a kind of method for generating photovoltaic effect Download PDFInfo
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- 230000000694 effects Effects 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 74
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 150000001336 alkenes Chemical class 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000011896 sensitive detection Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 14
- 230000005684 electric field Effects 0.000 description 12
- 238000012546 transfer Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The present invention provides a kind of photovoltaic devices, including light source and photovoltaic device, the photovoltaic device includes high resistance light gain semi-conductor substrate, graphene layer on the high resistance light gain semi-conductor substrate, first electrode and second electrode on the high resistance light gain semi-conductor substrate and the graphene layer, and the third electrode under the high resistance light gain semi-conductor substrate and with the high resistance light gain semi-conductor substrate contact, the energy of the light of the light source transmitting is greater than the band gap of the high resistance light gain semi-conductor substrate and irradiates the first electrode, the third electrode is in the lower section of the first electrode.Photovoltaic devices of the invention can be realized super fast response and highly sensitive detection to exposure light, it might even be possible to which the light logic function of realizing graphene can be used as ultrafast, highly sensitive optical detector or optical logic device.
Description
Technical field
The invention belongs to technical field of semiconductors more particularly to a kind of photovoltaic devices and a kind of sides for generating photovoltaic effect
Method.
Background technique
The energy is the power of material base for the survival of mankind and social development progress, in lack of energy and environmental pollution
Today that problem is got worse, people thirst for substituting conventional energy resource with the renewable energy of safety and environmental protection.Since method in 1839
Since state scientist Becquerel has found photovoltaic effect, the photovoltaic power generation technology based on semiconductor photovoltaic effect is constantly sent out
Exhibition, various photovoltaic devices also emerge one after another, and gradually can satisfy human wants.Solar battery is towards low cost, high at present
The direction of efficiency is developed.Photovoltaic effect of traditional semiconductor photovoltaic device based on PN junction principle, device technology complexity and device
Part size is larger, limits extensive use of the conventional photovoltaic device in terms of small size device, especially in micro-nano device and soft
The application aspect of property device shows biggish limitation.
The grapheme material of monatomic thickness is since discovery, due to its unique mechanics, electricity, optically and thermally etc.
Performance arouses great concern.These excellent physical properties of graphene, make its be widely used in the energy, material and
The fields such as electronic device.As the next-generation transparent electrode material of great potential, graphene is expected to replace traditional metal and ITO
Application of electrode provides chance into photoelectric device, for the micro-nano and flexible device based on graphene.In graphene photovoltaic device
In, graphene acts not only as transparent conductive film, can also separate photo-generated carrier in the interface with semiconductor.Work as energy
The light source that amount is greater than semiconductor band gap is irradiated to graphene/interface, and the valence-band electrons in semiconductor material absorb photon
Energy jump to conduction band generate photo-generated carrier, and the interface of semiconductor and graphene formed built in field effect under
It is quickly transferred on graphene, to change the fermi level of graphene.After the electrode of only one graphene is irradiated,
Voltage difference will be set up in the two end electrodes of graphene generates photovoltaic effect.But the photovoltaic generated in this case
The photoelectric conversion efficiency of effect is lower, response speed is slow and is unfavorable for regulating and controlling.
Summary of the invention
Therefore, it is an object of the invention to overcome the defect of the above-mentioned prior art, a kind of photovoltaic devices, including light source are provided
And photovoltaic device, the photovoltaic device include high resistance light gain semi-conductor substrate, are located at the high resistance light gain semi-conductor substrate
On graphene layer, first electrode on the high resistance light gain semi-conductor substrate and the graphene layer and the second electricity
Pole, and under the high resistance light gain semi-conductor substrate and with the high resistance light gain semi-conductor substrate contact
Three electrodes, wherein a part of the first electrode and the high resistance light gain semi-conductor substrate contact, another part with it is described
Graphene layer contact, a part of the second electrode and the high resistance light gain semi-conductor substrate contact, another part and institute
Graphene layer contact is stated, the energy of the light of the light source transmitting is greater than the band gap and spoke of the high resistance light gain semi-conductor substrate
According to the first electrode, the third electrode is in the lower section of the first electrode.
Photovoltaic devices according to the present invention, it is preferable that further include being arranged under the high resistance light gain semi-conductor substrate
Insulating medium layer, the third electrode is located under the insulating medium layer and contacts with the insulating medium layer.
Photovoltaic devices according to the present invention, it is preferable that the third electrode is in the underface of the first electrode.
Photovoltaic devices according to the present invention, it is preferable that the high resistance light gain semi-conductor substrate is high resistant organic semiconductor
Or high resistant inorganic semiconductor.
Photovoltaic devices according to the present invention, it is preferable that the light source is ultraviolet source, the high resistance light gain semi-conductor lining
Bottom is SiC；Or the light source is visible light source, the high resistance light gain semi-conductor substrate is GaP or GaAs.
Photovoltaic devices according to the present invention, it is preferable that the thickness of the high resistance light gain semi-conductor substrate is greater than 50nm.
Photovoltaic devices according to the present invention, it is preferable that the insulating medium layer is AlO2、SiO2Or HfO2。
Photovoltaic devices according to the present invention, it is preferable that the first electrode, the second electrode and the third electrode are
Metal electrode.
Photovoltaic devices according to the present invention, it is preferable that further include the opaque coat on second electrode.
The invention also discloses a kind of methods for generating photovoltaic effect using photovoltaic devices according to the present invention.
Photovoltaic devices of the invention are based on the photovoltaic devices of electric field regulation, it is the photovoltaic based on high-resistance semi-conductor substrate
Extension of the device to electric field regulation device performance.Relative to the photovoltaic device that no outfield regulates and controls, applying suitable voltage can be more
Big degree separates photo-generated carrier, and photovoltaic effect can be more prominent.Photocurrent response under short circuit condition is more prominent.Even pass through
The regulation of applied voltage realizes the sensitive regulation to photoelectric current, realizes new graphene function element.The present invention is comprehensively utilizing
The high-resistance semi-conductor efficient absorption photon higher than its band-gap energy and generate photo-generated carrier, the photo-generated carrier is applying electricity
It is quickly transferred to the excellent electrons transport property of graphene, graphene in the case of pressure and brings super fast response to photo-generated carrier.
Reach regulation sensitiveer to photovoltaic effect, a greater degree of by applying external voltage.The photovoltaic device is easily integrated and industry
Metaplasia produces, and has very big potential using value.
Detailed description of the invention
The embodiment of the present invention is described further referring to the drawings.Wherein:
Fig. 1 is the schematic diagram of the cross section structure of photovoltaic devices according to the present invention.
Fig. 2 is the top view of photovoltaic device 100 in photovoltaic devices shown in FIG. 1, and lead is not shown, and wherein dotted line AB is indicated
The cutting line of device cross section structure.
Fig. 3 is the band structure schematic diagram of metal electrode Ti and SiC heterojunction boundary, wherein (a) is that biasing is not unglazed
According in the case of, (b) under not biasing light conditions, (c) to add back bias voltage, (back electrode is voltage cathode, is by irradiation electrode
Anode) light conditions under, (d) for plus positive bias (back electrode is positive polarity, by irradiation electrode be cathode) light conditions
Under.
Fig. 4 is the band structure schematic diagram of graphene and SiC heterojunction boundary, wherein (a) is not biasing no light feelings
It (d) is to add under positive bias light conditions (b) under not biasing light conditions, (c) to be to add under back bias voltage light conditions under condition.
Fig. 5 is plus negative bias is pressed under light conditions, the band structure schematic diagram of graphene and metal electrode Ti.
Fig. 6 is plus positively biased is pressed under light conditions, the band structure schematic diagram of graphene and metal electrode Ti.
Fig. 7 is that zero bias are pressed under light conditions, the band structure schematic diagram of graphene and metal electrode Ti.
Fig. 8 is the schematic top plan view of the photovoltaic device structure in another exemplary photovoltaic devices of the present invention.
Fig. 9 is the cross section structure schematic diagram of the photovoltaic device structure in the another exemplary photovoltaic devices of the present invention.
Specific embodiment
In order to make the purpose of the present invention, technical solution and advantage are more clearly understood, and are passed through below in conjunction with attached drawing specific real
Applying example, the present invention is described in more detail.It should be appreciated that described herein, specific examples are only used to explain the present invention, and
It is not used in the restriction present invention.
Fig. 1 shows the cross section structure schematic diagram of photovoltaic devices according to the present invention, including photovoltaic device 100 and is used for spoke
According to the light source 200 of photovoltaic device 100, photovoltaic device 100 includes insulating medium layer 1, and the high resistance light on insulating medium layer 1 increases
Beneficial semiconductor substrate 2, the graphene layer 3 in gain of light semiconductor substrate 2 are located at gain of light semiconductor substrate 2 and graphite
First electrode 41 and second electrode 42 on alkene layer 3, the third electrode 43 positioned at 1 back side of insulating medium layer, and respectively with
One, second and third electrode 41,42 and 43 be electrically connected the first, second, and third lead 51,52 and 53, wherein first electrode
41 a part is contacted with gain of light semiconductor substrate 2, and another part is contacted with graphene layer 3, a part of second electrode 42
It being contacted with gain of light semiconductor substrate 2, another part is contacted with graphene layer 3, and third electrode 43 is contacted with insulating medium layer 1,
And it is located at the underface of first electrode 41.Fig. 2 is the top view of photovoltaic device 100 in photovoltaic devices shown in FIG. 1, wherein not showing
Third electrode 43 and first, second and third lead 51,52 and 53 out.It is well known that in semiconductor field, it is so-called " high resistant "
Refer to that resistivity is higher than 105Ω·cm。
The gain of light semiconductor substrate 2 of photovoltaic device as graphene layer 3, insulation in addition to being situated between in photovoltaic devices of the invention
Matter layer 1, the support substrate of the first and second electrodes 41 and 42 are outer (in the case where no insulating medium layer 1 or third
The support substrate of electrode 43), it is often more important that gain of light semiconductor substrate 2 is regard as photosensitive material, when the energy that light source issues
When illumination greater than gain of light semiconductor substrate band gap is mapped on prepared photovoltaic device, gain of light semiconductor substrate is biggish
Light absorption volume enhances the absorption for comparing the high photon energy of its band-gap energy, to generate in gain of light semiconductor substrate
A large amount of photo-generated carrier.
The electrode 41 of photovoltaic device is in addition to the two end electrodes as photovoltaic device of the invention in photovoltaic devices of the invention
One of it is outer, also irradiate by exposure light and while photoproduction current-carrying from gain of light semiconductor substrate 2 to electrode 41 that shifted from of reception
Son.In addition, top-gated electrode of the electrode 41 other than above-mentioned effect, also as application applied voltage；Electrode 43 is used as backgate
Electrode.According to one embodiment of present invention, it is preferable that electrode 41,42 and 43 is metal electrode.Referring specifically to Fig. 3 and figure
In the case of 4, Fig. 3 is (a) not biasing no light, (b) not under biasing light conditions, (c) plus under the light conditions of back bias voltage
(back electrode be voltage cathode, by irradiation electrode be positive polarity) and (d) add positive bias (back electrode is positive polarity, is irradiated
Electrode is voltage cathode) light conditions under metal electrode Ti and SiC heterojunction boundary band structure schematic diagram, wherein EC、
EV、EF(SiC) and EF(Ti) fermi level of the conduction band of SiC, valence band, fermi level and metal Ti, Δ E are respectively indicatedFIt indicates to add
The fermi level E of SiC after biasF(SiC) with the fermi level E of grapheneF(Ti) difference.Fig. 4 is (a) not biasing no light
In the case of, (b) not under biasing light conditions, (c) plus under back bias voltage light conditions add graphite under positive bias light conditions with (d)
The band structure schematic diagram of alkene and SiC heterojunction boundary, wherein EF(G) fermi level of graphene, Δ E are indicatedFIndicate biasing
The fermi level E of SiC afterwardsF(SiC) with the fermi level E of grapheneF(G) difference.Since fermi level is in gain of light semiconductor material
Material and the requirement of the balance of metal electrode interface, interface be formed with conducive to photo-generated carrier from gain of light semiconductor substrate to
The electric field of metal electrode drift.It is quick from gain of light semiconductor substrate to metal electrode that the built in field facilitates photo-generated carrier
Transfer, as shown in Fig. 4 (b).At the same time, it is applied with a regulation voltage between electrode 41 and electrode 43, effectively accelerates
The transfer rate of photo-generated carrier in gain of light semiconductor, it can be seen that applying negative electricity on SiC from Fig. 3 (c) or 4 (c)
After pressure, conduction band side is bigger to interface inclination, is conducive to the transfer of photo-generated carrier.In the case where illumination, it is applied to electrode
Voltage between 41 and electrode 43 can regulate and control the shift direction and transfer velocity of photo-generated carrier.Specifically, when in top-gated electricity
When applying a suitable back bias voltage between pole 41 and back-gate electrode 43 (top-gated electrode is positive, and back-gate electrode is negative), in SiC
The photo-generated carrier of generation can be quickly transferred in metal electrode and graphene under the booster action of extra electric field, make its expense
Rice energy level significantly increases；And when applying positive bias, extra electric field photo-generated carrier can be inhibited in SiC to by irradiation electrode and
The transfer of graphene makes the fermi level of metal electrode and graphene change smaller or reduce.It is achieved that in this way to graphene
Photovoltaic voltage between two end electrodes carries out Effective Regulation., it can be achieved that sensitive regulation to photoelectric current under short circuit condition.It is based on
Such regulating and controlling voltage can also realize the device with light logic function.
The insulating medium layer 1 of photovoltaic device is used to prevent the leakage current at third electrode 43 in photovoltaic devices of the invention,
So that the extra electric field applied can effectively enhance the transfer of photo-generated carrier, cause by irradiation metal electrode or graphene expense
The larger change of rice energy level.
It should be understood readily by those skilled in this art, when illumination causes gain of light semiconductor substrate to the both ends of graphene layer 3
When locating to shift the quantity difference of carrier on electrode 41 and 42, it will lead to generate Fermi in the two end electrodes of graphene layer 3
Can be very poor, to generate photovoltaic effect.And the extra electric field between top-gated electrode 41 and back-gate electrode 43 is further amplified or presses down
This effect is made.In order to keep the fermi level formed at the both ends of graphene layer 3 on electrode 41 and 42 under light conditions poor
It is bigger to be worth Δ E, can be realized by following situation: it is contemplated herein that the situation that electrode 41 and 42 is symmetrical, the i.e. material of electrode 41 and 42
Expect that type and its area in gain of light semiconductor substrate are all identical, in this case, the light that light source issues only irradiates two
One (such as first electrode 41) in electrode 41 or 42, applied voltage are applied at the electrode 41 of light irradiation, will make
The fermi level of illuminated electrode has greatly changed, so that it is very poor so that two electrodes is generated biggish Fermi.This field
Technical staff is it will be understood that can also be in region coating light non-transmittable layers except by irradiation electrode.At this moment, the light that light source issues is equal
Irradiating entire device evenly will enable two electrodes generation Fermi very poor.
The graphene layer 3 of photovoltaic device is used as two interelectrode connection media in photovoltaic devices of the invention, at two
Size (including length and width) between electrode 41,42 directly affects the size of photovoltaic voltage.In principle, two electrodes 41,
Graphene layer between 42 is longer and narrower, and photovoltaic effect is more prominent.Meanwhile graphene layer 3 is also received from the gain of light and is partly led
The photo-generated carrier that body substrate 2 shifts, makes its fermi level change, to influence the response pattern of short-circuit photocurrent.?
It under the action of applied voltage regulation, is detected based on short-circuit photocurrent, which may act as highly sensitive ultrafast optical detector, very
To light logic transistor.
The modulation voltage as applied in photovoltaic devices of the invention is between the photovoltaic electric generated graphene two end electrodes
It is pressed with regulating and controlling effect outstanding, so the photocurrent response modification scope of photovoltaic devices of the invention under short circuit condition is wide, it can
It realizes higher photoelectric conversion efficiency, or even realizes light logic function.
Illustrate photovoltaic devices of the invention below by way of specific example.
Illustrate the specific example of photovoltaic devices of the invention referring to Fig.1.It includes photovoltaic device 100 and ultraviolet source 200.
Photovoltaic device 100 includes dielectric Al2O3Layer 1 is located at dielectric Al2O3High resistant SiC substrate 2 on layer 1；It is served as a contrast positioned at SiC
Graphene layer 3 on bottom 2；Ti metal electrode 41 and Ti metal electrode 42 in SiC substrate 2 and graphene layer 3 are located at exhausted
Edge medium A l2O3On 1 back side of layer and in the Ti metal electrode 43 for being illuminated the underface of electrode 41；One of Ti metal electrode 41
Divide and contacted with SiC substrate 2, another part is contacted with graphene layer 3；42 a part of Ti metal electrode is contacted with SiC substrate 2, separately
A part is contacted with graphene layer 3；And Ti metal electrode 43 and dielectric Al2O3The rear-face contact of layer 1.Wherein, SiC is served as a contrast
Bottom 2 with a thickness of 350 μm；Dielectric Al2O3Layer 1 with a thickness of 20nm；The length of graphene layer between electrode 41 and 42 × wide
It is 10 μm of 100 μ m.
Experiment discovery: if the ultraviolet lighting that energy is greater than SiC band gap is mapped to one of them of prepared photovoltaic device
On electrode, can electron transition in exciting irradiation area SiC valence band to conduction band.And the photo-generated carrier generated in SiC is in SiC
With the electric field of the Interface electric field and voltage formation being added between electrode 41 and 43 of metal electrode Ti (or SiC and graphene)
Under collective effect, it is quickly transferred on the Ti metal electrode (such as Fig. 3 (c) and (d) are shown) or graphene of ultraviolet light (as schemed
4 (c) and (d) shown in), it is poor to set up energy of position between the two end electrodes for causing graphene to contact with metal, thus in electrode two
End can produce the voltage difference of tens or even several hundred millivolts, and as shown in Figure 5 and Figure 6, Fig. 5 and Fig. 6 are respectively that negative bias is added to be pressed with light
According in the case of and positively biased is added to be pressed under light conditions, the band structure schematic diagram of graphene and metal electrode Ti.Wherein, Δ E is
Left electrodes (i.e. first electrode 41) is irradiated in the light that photon energy is h ν (band gap that its energy is greater than gain of light semiconductor)
In the case of, it is poor in the fermi level that graphene both ends generate.For the ease of being compared with the situation under no-bias, Fig. 7 is provided
Zero bias are pressed under light conditions, the band structure schematic diagram of graphene and metal electrode Ti；Wherein, Δ E0For in photon energy
In the case where light irradiation left electrodes for h ν (band gap that its energy is greater than gain of light semiconductor), generated at graphene both ends
Fermi level is poor.Here the Δ E observed0It is significantly less than the Δ E value having under bias.As can be seen from the figure outer inclined by applying
The method of pressure can change band curvature degree and curved shape at the heterojunction boundary of graphene (metal Ti) and SiC, from
And change the transfer rate or shift direction of carrier.Applying back bias voltage and positive bias can be such that electronics is transferred to from SiC respectively
Graphene (metal) is transferred to SiC from graphene (metal).
In addition, at the heterojunction boundary that graphene and SiC are formed, the photo-generated carrier generated in SiC equally can be with
It is transferred in graphene by the conduction band of SiC, and to no light zone-transfer in graphene.However due to the electronic work of graphene
The electronic work function of function and SiC are close, smaller (such as Fig. 4 (a) of band curvature at the heterojunction boundary of graphene and SiC
It is shown), the close electrons of the valence-band electrons energy of electron energy and SiC in graphene flow back into the valence band of SiC, cause stone
The quantity of net carrier is constant in black alkene or variation is smaller.
Fig. 8 is the overlooking structure diagram of photovoltaic device in another exemplary photovoltaic devices of the invention.In this example,
Unshowned light source is the green light of 532nm of the energy greater than 2.3eV；The insulating medium layer not marked uses HfO2；High resistance light increases
Beneficial semiconductor substrate uses GaP, and (its band gap is 2.3eV) single-chip；First electrode 41 is Ti metal, and second electrode 42 is Pt gold
Belong to, third electrode 43 is Ti metal.Wherein, insulating medium layer HfO2With a thickness of 10nm, GaP single-chip with a thickness of 300 μm；
The area equation of first electrode 41, second electrode 42 and third electrode 43；The length of graphene layer between electrode 41 and electrode 42
× width is 3 μm of 10 μ m.
Fig. 9 is the cross section structure schematic diagram of photovoltaic device in another exemplary photovoltaic devices of the invention.In this example,
Unshowned light source is the feux rouges of 632nm of the energy greater than 1.42eV；Insulating medium layer uses SiO2, gain of light semiconductor substrate
Using the Semi-insulating GaAs of epitaxial growth on a si substrate, (its band gap is 1.42eV) film；First electrode 41, second electrode 42
And third electrode 43 is all Ti metal.Wherein, SiO2Insulating layer with a thickness of 100nm, GaAs film with a thickness of 100nm；
Length × width of graphene layer is 3 μm of 50 μ m between electrode 41 and electrode 42.
Other examples according to the present invention, the material of high resistance light gain semi-conductor substrate are organic or inorganic semiconductor material
The thickness of material, substrate is greater than 50nm；
Other examples according to the present invention, insulating medium layer are high dielectric constant material, and thickness is according to dielectric material
The size of dielectric constant determines, thinner thickness needed for the big material of dielectric constant；Its thickness is greater than 10nm；Those skilled in the art
Member is it will be understood that in the present invention, under the premise of leakage current is lesser, can not use insulating medium layer.
Other examples according to the present invention, first electrode, second electrode and third electrode are identical metal；It is preferred that
, the region coating light non-transmittable layers in gain of light semiconductor substrate except by irradiation electrode.It will be understood by those skilled in the art that
In the present invention, any restriction is not made to the shape of electrode；In addition, third electrode not necessarily first electrode just under
Side, if in the lower section of first electrode, herein " third electrode is in the lower section of first electrode " refer to first electrode and
The projection of third electrode in the horizontal plane has overlapping region.(underface is in) when overlapping region maximum, and effect is best.
Other examples according to the present invention, the length of graphene layer is greater than 3 μm between metal electrode 41 and metal electrode 42.
Other examples according to the present invention, photovoltaic device of the invention can also include by gain of light semiconductor substrate, stone
The encapsulating housing that black alkene layer, electrode and lead are packaged, the encapsulating housing have light passing window.
In order to embody effect of the invention, inventor compares experiment, uses power for the ultraviolet of the 325nm of 10mW
Light source (spot diameter is about 150 μm) irradiates an electrode of the photovoltaic device in the photovoltaic devices of specific example of the present invention, together
When between irradiated top electrode 41 and back electrode 43 apply 20V voltage (back electrode is negative), the experimental results showed that generate
Photovoltaic voltage is about 120 millivolts, increases by 40 millivolts for 80 millivolts of photovoltaic voltage when than zero-bias.
In conclusion the working principle of photovoltaic devices provided by the invention is totally different from the photovoltaic device of the prior art,
The photovoltaic devices fully utilize gain of light semiconductor material and compare the efficient absorption of the high photon of its band-gap energy, the gain of light half
Photo-generated carrier is in SiC and the Interface electric field of metal electrode (metal Ti) or the Interface electric field of SiC and graphene in conductor material
And it is quickly transferred on metal electrode and graphene under the collective effect of electric field between top-gated electrode and back-gate electrode, and in graphite
It is poor that fermi level is set up between the two end electrodes of alkene, to realize photovoltaic effect.Under short circuit condition, due to the tune of applied voltage
Control and the excellent electrons transport property of graphene, may be implemented the super fast response and highly sensitive detection to exposure light, it might even be possible to
Realize the light logic function of graphene.Therefore photovoltaic devices of the invention can be used as ultrafast, highly sensitive optical detector or light
Logical device.
In addition, to can be organic semiconductor, inorganic semiconductor thin for the gain of light semiconductor material of photovoltaic devices of the invention
Membrane material, range of choice are wide；The choice of metal electrode material and insulating dielectric materials is big；The device technology letter of photovoltaic devices
Single, size is small, and with existing lsi technology good compatibility, manufacturing cost is cheap.
In the present invention, the method that grid voltage carries out photovoltaic effect modulation is applied to graphene photovoltaic device in insulating substrate,
The photovoltaic for being applied to and can be realized identical function, graphene two-end structure in conductive substrates with similar structure can also be expanded
(in the device, there is high resistance medium layer to separate between unirradiated electrode and conductive substrates) in device.
Although the present invention has been described by means of preferred embodiments, the present invention is not limited to described here
Embodiment, without departing from the present invention further include made various changes and variation.
Claims (10)
1. a kind of photovoltaic devices, including light source and photovoltaic device, the photovoltaic device includes high resistance light gain semi-conductor substrate, position
Graphene layer on the high resistance light gain semi-conductor substrate is located at the high resistance light gain semi-conductor substrate and the graphite
First electrode and second electrode on alkene layer, and be located at the high resistance light gain semi-conductor substrate under and with the high resistant
The third electrode of gain of light semiconductor substrate contact, wherein a part of the first electrode is partly led with the high resistant gain of light
Body substrate contact, another part are contacted with the graphene layer, a part of the second electrode and the high resistant gain of light half
Conductor substrate contact, another part are contacted with the graphene layer, and the energy of the light of the light source transmitting is greater than the high resistance light
The band gap of gain semi-conductor substrate and the first electrode is irradiated, the third electrode is in the lower section of the first electrode.
2. photovoltaic devices according to claim 1 further include being arranged under the high resistance light gain semi-conductor substrate
Insulating medium layer, the third electrode are located under the insulating medium layer and contact with the insulating medium layer.
3. photovoltaic devices according to claim 1 or 2, wherein the third electrode is in the underface of the first electrode.
4. photovoltaic devices according to claim 1 or 2, wherein the high resistance light gain semi-conductor substrate is that high resistant is organic
Semiconductor or high resistant inorganic semiconductor.
5. photovoltaic devices according to claim 1 or 2, wherein the light source is ultraviolet source, the high resistant gain of light half
Conductor substrate is SiC；Or the light source is visible light source, the high resistance light gain semi-conductor substrate is GaP or GaAs.
6. the photovoltaic devices according to preceding claims 1 or 2, wherein the thickness of the high resistance light gain semi-conductor substrate
Greater than 50nm.
7. photovoltaic devices according to claim 2, wherein the insulating medium layer is AlO2、SiO2Or HfO2。
8. photovoltaic devices according to claim 1 or 2, wherein the first electrode, the second electrode and the third
Electrode is metal electrode.
9. photovoltaic devices according to claim 1 or 2 further include the opaque coat on second electrode.
10. a kind of method for generating photovoltaic effect using photovoltaic devices of any of claims 1-9.
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| CN102263144A (en) * | 2011-07-29 | 2011-11-30 | 清华大学 | Semiconductor heterojunction solar cell based on bionic moth eye and manufacturing method thereof |
| CN105244405A (en) * | 2014-07-10 | 2016-01-13 | 中国科学院物理研究所 | Ultraviolet detector |
| CN104241415A (en) * | 2014-09-10 | 2014-12-24 | 浙江大学 | Graphene/gallium arsenide solar cell and manufacturing method thereof |
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