CN108281554B - Photoelectric detector with quantum dot structure and preparation method thereof - Google Patents
Photoelectric detector with quantum dot structure and preparation method thereof Download PDFInfo
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- CN108281554B CN108281554B CN201810079091.0A CN201810079091A CN108281554B CN 108281554 B CN108281554 B CN 108281554B CN 201810079091 A CN201810079091 A CN 201810079091A CN 108281554 B CN108281554 B CN 108281554B
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Abstract
The invention relates to the technical field of photoelectric detectors, in particular to a preparation method of a quantum dot structure photoelectric detector, which is provided with a highly doped substrate covered with a dielectric layer and comprises the following steps: forming a two-dimensional material layer on the dielectric layer; coating a quantum dot material layer solution on the surface of the two-dimensional material layer to form a quantum dot material layer; and manufacturing a layer of graphical transparent conductive film on the quantum dot material layer to finish the preparation of the device. A voltage-assisted quantum dot structure photoelectric detector sequentially comprises a highly doped substrate, a dielectric layer, a two-dimensional material layer, a quantum dot material layer and a transparent conductive film from bottom to top, wherein a source electrode and a drain electrode are formed on the two-dimensional material layer; the two-dimensional material layer is in contact with the quantum dot material layer to form a built-in electric field; and applying an adjustable modulation voltage which is consistent with the direction of the built-in electric field between the transparent conductive film and the highly doped substrate. The invention can improve the response speed and the photocurrent gain of the device, and obviously improve the performance of the device.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a voltage-assisted quantum dot structure photoelectric detector.
Background
Graphene and graphene-like two-dimensional (2D) materials have attracted considerable attention due to their extraordinary electronic and optical properties, and have great potential in optoelectronic applications such as photodetection. Although the research on graphene and graphene-like two-dimensional materials has been greatly advanced, fundamental and practical problems still prevent the application of graphene and graphene-like two-dimensional materials.
Graphene is a two-dimensional material in the form of a single atomic layer with carbon atoms arranged in a hexagonal honeycomb lattice with many attractive electronic, optical, mechanical and thermal properties. The electrons transferred in graphene are represented as a non-mass Dirac fermi, energyThe quantity and the momentum are in a linear relation, so that the charge carrier mobility of the graphene can reach 10 at normal temperature5cm2Vs, up to 10 at low temperatures6cm2Vs. This excellent electronic property has attracted much attention, making it possible to use graphene for high-frequency and high-speed electronic devices, field-effect transistors, and inverters, and graphene is considered as an alternative material to silicon. However, the zero band gap and semi-metallic nature of graphene hinders its application in logic switching devices, but this so-called "disadvantage" favors its application in optoelectronics, as it breaks the "long wavelength limitation" of other semiconductors by light with photon energies less than the band gap. Moreover, the light absorption coefficient of the single-layer graphene in the range of 300-2500nm can reach 7x105cm-1Much higher than conventional semiconductor materials. The excellent optical properties enable various functional devices made of graphene, such as supporting and/or active materials in light-emitting diodes, solar cells, photocatalysts, biosensors and photodetectors, to have good development prospects.
At present, the detector of some novel structures all is based on graphite alkene, and it is comparatively typical have three kinds: the first is that a layer of hexagonal boron nitride dielectric layer is sandwiched between two graphene electrodes, and a channel comprises the dielectric layer; the second is that a medium layer is sandwiched between two layers of graphene, but the channel is that the lower layer of graphene does not contain the medium layer, and the upper layer of graphene and the medium layer play a role in modulating light of the lower layer of graphene, so that the device has a large gain coefficient and greatly improves response; a dielectric layer is sandwiched between the heterojunction of the third layer of graphene and other materials, the graphene is used as a channel, and the dielectric layer is not arranged in the channel.
The weak light absorption characteristics of graphene, and its gain mechanism without generating multiple charge carriers from one incident photon, limit the response of graphene-based photodetectors. In 2012, Gerasimos Konstatatos proposed the idea of mixing quantum dots and graphene to prepare a quantum dot graphene hybrid photodetector, in which the mixed light consists of single-layer or double-layer grapheneThe electric detector is covered with a colloidal quantum dot film, showing 108A photoelectric gain of approximately 107The A/W responsivity increases charges generated by light absorption in the adjustable quantum dot layer and transferred to the graphene, and due to the high charge mobility of the graphene and the long capture life of the quantum dot layer, a large number of opposite carriers flow between two electrodes through a graphene channel before carriers bound in the quantum dots are combined, so that the photocurrent gain of the device is greatly increased. The light detector has a 7x1013J has specific detection sensitivity and high switch and device responsivity, but has the defects of large dark current and slow response speed.
Disclosure of Invention
The invention aims to provide a quantum dot structure photoelectric detector and a preparation method thereof, wherein the photoelectric detector enables photo-generated carriers in a quantum dot material to enter a two-dimensional material conducting channel more quickly and easily, so that the response speed and the photocurrent gain of a device are improved, and the performance of the device is obviously improved.
In order to meet the requirements, the technical scheme adopted by the invention is as follows: the preparation method of the quantum dot structure photoelectric detector is provided with a highly doped substrate covered with a dielectric layer, and comprises the following steps:
s1, transferring the two-dimensional material to the dielectric layer to form a two-dimensional material layer;
s2, manufacturing a source electrode and a drain electrode on the two-dimensional material layer;
s3, coating a quantum dot material layer solution on the surface of the two-dimensional material layer to form a quantum dot material layer in contact with the two-dimensional material layer;
and S4, manufacturing a layer of graphical transparent conductive film on the quantum dot material layer, and finishing the preparation of the device.
A voltage-assisted quantum dot structure photoelectric detector sequentially comprises a highly doped substrate, a dielectric layer, a two-dimensional material layer, a quantum dot material layer and a transparent conductive film from bottom to top, wherein a source electrode and a drain electrode which are connected with the two-dimensional material layer are formed on the two-dimensional material layer, and the source electrode and the drain electrode are respectively positioned on two sides of the quantum dot material layer; the two-dimensional material layer is in contact with the quantum dot material layer to form a built-in electric field which has a constraint effect on single charge in the quantum dot; and applying an adjustable modulation voltage between the transparent conductive film and the highly doped substrate, wherein the electric field direction of the modulation voltage is consistent with the built-in electric field direction.
Compared with the prior art, the invention has the following advantages:
the quantum dot material layer is formed on the two-dimensional material layer, so that the response spectrum of the device is widened, the carrier recombination is limited, the carrier service life is prolonged, and the photoresponse is increased; due to the ultrahigh mobility of the two-dimensional material layer, the optical response speed of the device is increased; the transparent conductive film does not influence the light absorption condition, but because the built-in electric field formed between the quantum dot material layer and the two-dimensional material layer is very small, an external electric field is applied between the transparent conductive film and the highly doped silicon substrate, so that photogenerated carriers in the quantum dot material can more quickly and easily enter a two-dimensional material conductive channel, the response speed and the photocurrent gain are further improved, and the device performance is remarkably improved; the quantum dot material has a light grid regulation effect on the two-dimensional material, voltage is applied to the transparent conductive film, the regulation range of the two-dimensional material can be expanded by changing the applied voltage, and the response speed and the response strength of the device are controlled.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a front view of a photodetector of the present invention;
FIG. 2 is a top view of a photodetector of the present invention;
FIG. 3 is a schematic flow chart of a manufacturing method of the present invention;
FIG. 4 shows the directions of the applied electric field and the internal electric field in the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail with reference to the accompanying drawings and specific embodiments. Certain features that are well known to those skilled in the art have been omitted from the following description for the sake of simplicity.
As shown in fig. 3, the present embodiment provides a method for manufacturing a quantum dot structure photodetector, which is characterized in that a highly doped silicon substrate 1 covered with an alumina dielectric layer 2 is provided, and the method includes the following steps:
ultrasonically cleaning the highly doped silicon substrate 1 by using a detergent, acetone, ethanol and deionized water in sequence;
transferring graphene onto the alumina dielectric layer 2 to form a graphene layer 3;
photoresist is coated on the graphene layer 3 in a spinning mode, the photoresist at the positions of the source electrode and the drain electrode is photoetched by an ultraviolet photoetching method, and development and fixation are carried out; evaporating a layer of 50nm metal electrode on the developed and fixed device in an electron beam evaporation device to form a source electrode 4 and a drain electrode 7, and removing redundant photoresist;
coating a perovskite quantum dot material layer 5 solution on the surface of the graphene layer 3, drying and evaporating the solvent to form the perovskite quantum dot material layer 5 in contact with the graphene layer 3;
and manufacturing a layer of graphical ITO transparent conductive film 6 on the perovskite quantum dot material layer 5 to finish the preparation of the device.
The transparent conductive film 6 is a metal oxide film or a transparent polymer film, and has good transmittance in the visible light and near infrared wavelength bands.
As shown in fig. 1-2, the voltage-assisted quantum dot structure photodetector manufactured by the method further comprises a highly doped silicon substrate 1, an aluminum oxide dielectric layer 2, a graphene layer 3, a perovskite quantum dot material layer 5 and a transparent conductive film 6 in sequence from bottom to top, a source electrode 4 and a drain electrode 7 connected with the graphene layer 3 are formed on the graphene layer 3, the source electrode 4 and the drain electrode 7 are respectively located on two sides of the perovskite quantum dot material layer 5, and a detector conductive channel is formed after a working voltage is applied to the source electrode 4 and the drain electrode 7; the graphene layer 3 is in contact with the perovskite quantum dot material layer 5 to form a built-in electric field which has a binding effect on a single charge in the perovskite quantum dot, the graphene layer is a photocurrent conducting channel, and the service life of a current carrier generated by the perovskite quantum dot material layer 5 is long; an adjustable modulation voltage is applied between the transparent conductive film 6 and the highly doped silicon substrate 1, and the electric field direction of the modulation voltage is consistent with the built-in electric field direction. The working principle of the photoelectric detector is as follows: the graphene layer 3 is a bottom conductive channel, the perovskite quantum dot material layer 5 is similar to a top grid in function, the Fermi level of the perovskite quantum dot material layer 5 is different from the Fermi level of the graphene layer 3, free electrons in the perovskite quantum dot material layer 5 can reach the graphene layer 3, an internal electric field is formed between the free electrons and the graphene layer 3, the internal electric field is weak, photogenerated holes generated by illumination on a device can enter the graphene layer 3 under the action of the internal electric field, so that photocurrent is formed in the channel, and photogenerated electrons can be bound in the perovskite quantum dot material layer 5, as shown in fig. 4, carrier recombination is reduced, the carrier service life is prolonged, and photoresponse is improved; and applying a modulation voltage with the direction consistent with the direction of a built-in electric field between the transparent conductive film 6 and the highly doped silicon substrate 1, so that the possibility that a photon-generated carrier enters the graphene layer 3 is increased, and the response speed and the response strength of the device can be controlled by changing the magnitude of the modulation voltage, so that the photon-generated carrier in the quantum dot material can enter a two-dimensional material conductive channel more quickly and easily, the response speed and the photocurrent gain are further improved, and the performance of the device is improved. It should be noted that the applied electric field direction is different according to the different bound charges of the quantum dot material, as shown in (a) and (b) of fig. 4.
The above examples are merely illustrative of several embodiments of the present invention, which are described in more detail and detail, but are not to be construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the claims.
Claims (9)
1. A preparation method of a quantum dot structure photoelectric detector is characterized in that a highly doped substrate covered with a dielectric layer is provided, and the method comprises the following steps:
s1, transferring the two-dimensional material to the dielectric layer to form a two-dimensional material layer;
s2, manufacturing a source electrode and a drain electrode on the two-dimensional material layer;
s3, coating a quantum dot material layer solution on the surface of the two-dimensional material layer to form a quantum dot material layer in contact with the two-dimensional material layer;
s4, manufacturing a layer of graphical transparent conductive film on the quantum dot material layer to finish the preparation of the device; specifically, an external electric field is applied between the transparent conductive film and the highly doped silicon substrate, so that photon-generated carriers in the quantum dot material can enter a two-dimensional material conductive channel more quickly and easily, the response speed and the photocurrent gain are further improved, and the device performance is remarkably improved.
2. The method of claim 1, wherein the two-dimensional material layer is graphene, MoS2, MoSe2, WS2, WSe2, or black phosphorus.
3. The method for manufacturing the quantum dot structure photodetector as claimed in claim 1 or 2, wherein the quantum dot material layer is lead sulfide, cadmium selenide or perovskite.
4. The method for manufacturing a quantum dot structure photodetector as claimed in claim 3, wherein the transparent conductive film is a metal oxide film or a transparent polymer film.
5. The method for manufacturing a quantum dot structure photodetector as claimed in claim 3, wherein the step S1 is preceded by a step of cleaning the highly doped substrate.
6. A quantum dot structure photoelectric detector is characterized by sequentially comprising a highly doped substrate, a dielectric layer, a two-dimensional material layer, a quantum dot material layer and a transparent conductive film from bottom to top, wherein a source electrode and a drain electrode which are connected with the two-dimensional material layer are formed on the two-dimensional material layer, and the source electrode and the drain electrode are respectively positioned on two sides of the quantum dot material layer; the two-dimensional material layer is in contact with the quantum dot material layer to form a built-in electric field which has a constraint effect on single charge in the quantum dot; and applying an adjustable modulation voltage between the transparent conductive film and the highly doped substrate, wherein the electric field direction of the modulation voltage is consistent with the built-in electric field direction.
7. The quantum dot structure photodetector of claim 6, wherein the two-dimensional material layer is graphene, MoS2, MoSe2, WS2, WSe2, or black phosphorus.
8. The quantum dot structure photodetector of claim 6 or 7, wherein the quantum dot material layer is lead sulfide, cadmium selenide or perovskite.
9. The photodetector as claimed in claim 8, wherein the transparent conductive film is a metal oxide film or a transparent polymer film having good transmittance in visible light and near infrared band.
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| CN111370526B (en) * | 2020-03-17 | 2023-12-26 | 南京大学 | Retina morphological photoelectric sensing array and picture convolution processing method thereof |
| CN112086531B (en) * | 2020-09-07 | 2021-06-29 | 深圳市绿聚墨电子科技有限公司 | Molecular material component applied to high-sensitivity photoelectric detector and manufacturing method thereof |
| CN112742687B (en) * | 2020-12-25 | 2021-12-03 | 电子科技大学 | Controllable preparation method of orderly-arranged lead sulfide quantum dots |
| CN113066905A (en) * | 2021-04-12 | 2021-07-02 | 山东大学 | Method for preparing indium selenide photoelectric detector by photoetching technology |
| CN113206159B (en) * | 2021-04-22 | 2023-05-26 | 华中科技大学 | Heterojunction material and application thereof |
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| CN115064601A (en) * | 2022-06-30 | 2022-09-16 | 杭州海康威视数字技术股份有限公司 | Photoelectric device and manufacturing method thereof |
| CN115332376A (en) * | 2022-08-01 | 2022-11-11 | 深圳大学 | Infrared photoelectric detector and preparation method |
| CN116344662B (en) * | 2023-05-25 | 2023-08-22 | 长春理工大学 | CdSe/MoS-based 2 Heterojunction polarized photoelectric detector and preparation method thereof |
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| CN106129253A (en) * | 2016-07-19 | 2016-11-16 | 中国科学院重庆绿色智能技术研究院 | A kind of photo-detector of Graphene perovskite composite construction and preparation method thereof |
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