CN116344662B - CdSe/MoS-based 2 Heterojunction polarized photoelectric detector and preparation method thereof - Google Patents

CdSe/MoS-based 2 Heterojunction polarized photoelectric detector and preparation method thereof Download PDF

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CN116344662B
CN116344662B CN202310600896.6A CN202310600896A CN116344662B CN 116344662 B CN116344662 B CN 116344662B CN 202310600896 A CN202310600896 A CN 202310600896A CN 116344662 B CN116344662 B CN 116344662B
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cadmium selenide
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李金华
王子恒
楚学影
石凯熙
翟英娇
徐铭泽
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Changchun University of Science and Technology
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Abstract

The invention relates to the field of photoelectric detection, in particular to a CdSe/MoS-based photoelectric detector 2 Heterojunction polarized photoelectric detector and preparation method thereof, the detector comprises a substrate, and CdSe/MoS compounded on the surface of the substrate 2 Heterojunction deposited on CdSe/MoS 2 Electrodes at both ends of the heterojunction. The preparation method comprises the following steps: arranging a few layers of molybdenum disulfide films on the surface of a substrate to obtain a composite A; arranging cadmium selenide nano rods on the surface of a few-layer molybdenum disulfide film in the complex A to obtain a complex B; and respectively depositing electrodes at two ends of the CdSe/MoS2 heterojunction on the complex B to obtain the polarized photoelectric detector. The invention respectively arranges a few layers of molybdenum disulfide film and cadmium selenide film on the surface of the substrate, and the molybdenum disulfide film and the cadmium selenide film are arranged on CdSe/MoS 2 The heterojunction region is provided with the electrode, and the response capability of the detector to polarized light can be effectively improved through the treatment.

Description

CdSe/MoS-based 2 Heterojunction polarized photoelectric detector and preparation method thereof
Technical Field
The invention relates to the field of photoelectric detection, in particular to a CdSe/MoS-based photoelectric detector 2 Heterojunction polarized photoelectric detector and preparation method thereof.
Background
Nanoparticles are a very active field of material science, as they are associated with quantum confinement, as well as interesting electronic properties and higher body surface area, are of great interest. Cadmium selenide is one of the representatives. Cadmium selenide has wide light transmission wave band, especially has higher transmittance in the infrared wave band, and has higher atomic number, larger forbidden bandwidth and higher resistivity, thus being an excellent material for preparing infrared nonlinear optical devices. Meanwhile, cadmium selenide has excellent mechanical property and chemical stability, and is a novel material which can replace conventional nuclear radiation detection materials such as selenium, germanium, cadmium antimonide and the like. Cadmium selenide is a direct transition II-VI compound semiconductor, has a hexagonal wurtzite crystal structure as a thermodynamically stable phase at normal temperature and pressure, has excellent photoelectric properties, has been widely applied to the fields of solar cells, photoelectric sensors, light emitting diodes and the like, has outstanding expression in the fields of photocatalysis, optical communication, biological markers and the like, and has wide application prospect. In daily life, for two basic characteristics of target information capturing light, namely, the wavelength and intensity of the light, such encoded information is converted into human visual information into the color and brightness of an image. The polarization characteristic of light is one of the inherent properties of light, and polarization information includes physical state information of an observation object. The polarization observation brings about an increase in the information quantity of the observation target, and the recognition capability of the ground object target is greatly improved. Because the human visual system has difficulty distinguishing polarization information, it is ignored. Since natural light interacts with the surface of an object, the polarization state of the natural light changes, and the discovery and research of the characteristics enable the application value of the polarization detection technology to be realized. With the continuous development of optical detection technology, the polarized light detection technology has progressed rapidly, and the research on extracting various information such as linear polarization degree, polarization angle and emissivity of a target object has been successfully completed. The photoelectric detector with the structure is only reported in the photoelectric detection field, but detection of polarized light response cannot be realized. The structure has important significance for application of two-dimensional materials in photoelectric and electronic devices.
However, most semiconductor materials do not respond to polarized light and polarized photodetection cannot be achieved. Only a few low dimensional anisotropic semiconductor quantum dots can be achieved. Semiconductor-based polarization detectors such as perovskite, graphene/nonpolar GaN, inGaAs, etc. have been reported. The quantum dot material has the characteristics of adjustable spectrum, easy dispersion, high luminous efficiency and the like, is an excellent material with high light absorption and light radiation efficiency, but the polarization light response of single particles is better at present, and the application of the quantum dot material in practical photoelectric devices is difficult due to the difficulty in large-area orientation.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a CdSe/MoS-based catalyst 2 The heterojunction polarized photoelectric detector and the preparation method thereof solve the problems that the polarized light detection and the large-area orientation of the anisotropic nano material are difficult due to the fact that the structure insensitive to the polarized light in the prior art.
The invention adopts the following technical contents: cdSe/MoS-based 2 The heterojunction polarized photoelectric detector comprises a substrate, and CdSe/MoS compounded on the surface of the substrate 2 Heterojunction deposited on CdSe/MoS 2 Electrodes at both ends of the heterojunction.
Further, cdSe/MoS 2 The heterojunction comprises cadmium selenide nano-rods, and the diameter of the cadmium selenide nano-rods is 10 nm-1 mu m.
Further, cdSe/MoS 2 The heterojunction also comprises lamellar molybdenum disulfide, and the size of the lamellar molybdenum disulfide is more than 1 mu m multiplied by 1 mu m.
CdSe/MoS-based 2 The preparation method of the heterojunction polarized photoelectric detector comprises the following steps:
step a: arranging a few layers of molybdenum disulfide films on the surface of a substrate to obtain a composite A;
step b: arranging cadmium selenide nano rods on the surface of a few-layer molybdenum disulfide film in the complex A to obtain a complex B;
step c: for CdSe/MoS on complex B 2 And respectively depositing electrodes at two ends of the heterojunction to obtain the polarized photoelectric detector.
In the step a, a mechanical stripping method is used for obtaining a few-layer molybdenum disulfide film on the surface of the substrate.
In the step B, the cadmium selenide nano-rods are pulled up by an L-B film preparation method to obtain the cadmium selenide nano-rods which are orderly arranged.
In the step B, the subphase is aqueous solution in the L-B film preparation method, wherein the solvent of the cadmium selenide solution is toluene or chloroform, and the concentration of the cadmium selenide solution is 1mg/ml-5 mg/ml.
Further, in step c, gold or gold/nickel is used as the electrode;
the deposition method of the gold electrode comprises the following steps: to CdSe/MoS 2 The heterojunction polarized photoelectric detector utilizes an electron beam evaporation system to evaporate a gold electrode on the surface, and the gold thickness is 70 nm-100 nm;
the deposition method of the gold/nickel electrode comprises the following steps: to CdSe/MoS 2 The heterojunction polarized photodetector utilizes an electron beam evaporation system to evaporate gold/nickel electrodes on the surface.
Further, when a gold electrode is used, the gold thickness is 70nm to 100nm; when gold/nickel electrodes are used, the gold thickness is 70nm to 100nm and the nickel thickness is 10nm to 30nm.
The invention solves the problems that the polarized light detection and the large-area orientation of the anisotropic nano material are difficult due to the fact that the structure insensitive to the polarized light in the prior art limits the polarized light. The invention arranges a few layers of molybdenum disulfide film and cadmium selenide film on the surface of the substrate, and the molybdenum disulfide film and the cadmium selenide film are arranged on CdSe/MoS 2 The electrodes are respectively arranged on the two sides of the heterojunction, n-n type heterojunction contact can be formed through the treatment, the n type heterojunction contact serves as an n type doping agent, carrier concentration and photocurrent are effectively improved, and detection on polarized light sensitivity can be achieved.
Furthermore, the invention respectively utilizes a mechanical stripping method to arrange a few layers of molybdenum disulfide films on the surface of the substrate, utilizes an L-B film technology to arrange a cadmium selenide film, and adopts CdSe/MoS 2 The surface of the heterojunction polarized photoelectric detector is respectively provided with the electrodes, and the response capability of the detector to polarized light is effectively improved through the preparation treatment.
Drawings
FIG. 1 is a schematic view of an ultraviolet detector according to the present invention;
fig. 2 is a schematic flow chart of a method for manufacturing an ultraviolet detector provided by the invention.
Wherein, the device comprises a 1-substrate, a 2-molybdenum disulfide film, a 3-cadmium selenide film, a 4-electrode, a 5-sliding barrier and a 6-lifting arm.
Detailed Description
BaseIn CdSe/MoS 2 The heterojunction polarized photoelectric detector comprises a substrate 1, and CdSe/MoS compounded on the surface of the substrate 1 2 Heterojunction deposited on CdSe/MoS 2 And electrodes 4 at both ends of the heterojunction.
The substrate 1 is a base material of a polarized photodetector, and the kind thereof is not particularly limited, and may be a conventional substrate well known to those skilled in the art. In the present invention, the substrate 1 is preferably provided with SiO on its surface 2 Si sheet of layer. The specification of the substrate 1 is not particularly limited, and may be a conventional specification of a substrate in a polarized photodetector, and in this embodiment, the substrate specification is: the length and width were 1cm and the thickness was 0.5mm.
As shown in FIG. 1, a layered molybdenum disulfide film 2 is arranged on a substrate 1, and a cadmium selenide film 3 composed of nano-rods is arranged on the molybdenum disulfide film 2, and the positions of the molybdenum disulfide film 2 and the cadmium selenide film 3 on the substrate 1 are not particularly limited, and can be at the center of the substrate or at other positions. That is, the invention provides CdSe/MoS 2 The performance of the heterojunction polarized photoelectric detector is not comparable among ultraviolet detectors of different types or material forms, and the invention aims at CdSe/MoS 2 The heterojunction polarized photoelectric detector is constructed, and the response capability of the detector to polarized light is obviously improved. In the invention, the diameter of the cadmium selenide nano rod is 100 nm-1 mu m, and the size of the layered molybdenum disulfide is more than 1 mu m multiplied by 1 mu m.
The electrode 4 is deposited on both sides of the molybdenum disulfide film 2 and the cadmium selenide film 3. The contact mode of the electrode 4 and the two sides of the molybdenum disulfide film 2 and the cadmium selenide film 3 is partial coverage, namely the left side and the right side of the electrode are measured, one part of the electrode is covered on the molybdenum disulfide film 2 and the cadmium selenide film 3, and the other part of the electrode is covered on the substrate 1. The electrode 4 is preferably gold or gold/nickel. Wherein, the thickness of gold is preferably 70 nm-100 nm, the thickness of nickel is preferably 10 nm-30 nm, and the specification is preferably: h is 2-5 mu m.
Through the processing function, the invention can effectively improve the response capability of the detector to polarized light. In the prior art, the polarization performance of the device is improved through a single material, however, the applicant researches find that the preparation of the oriented arrangement film forming is carried out on the cadmium selenide nanorods, so that the large-area integration of the device is facilitated, and the detection of the sensitivity to polarized light can be realized.
By CdSe/MoS 2 The heterojunction can form an n-n type heterojunction contact, and serves as an n type doping agent, so that the carrier concentration and photocurrent are effectively improved. The photoelectric detector with the structure has a photoelectric current generation mechanism different from a photoinduced floating gate effect, and the generation of the photoelectric current is derived from the direct transfer of photo-generated electrons of a conduction band of the cadmium selenide quantum dot, so that the problem of contradiction between the optical gain and the optical effect speed of the photoinduced floating gate effect can be solved. The device has high photocurrent and high light responsivity, and meanwhile, the response time of the device can be effectively reduced, and the carrier mobility of the detector can be improved. Meanwhile, cdSe nano rods show excellent anisotropic optical properties and MoS 2 The combination can improve the performance of the detector and can also show good response to polarized light.
The invention also provides a preparation method of the polarized photoelectric detector in the technical scheme, which comprises the following steps:
step a: arranging a few layers of molybdenum disulfide films on the surface of a substrate to obtain a composite A;
step b: arranging cadmium selenide nano rods on the surface of a few-layer molybdenum disulfide film in the complex A to obtain a complex B;
step c: for CdSe/MoS on complex B 2 And respectively depositing electrodes at two ends of the heterojunction to obtain the polarized photoelectric detector.
Referring to fig. 2, fig. 2 is a schematic flow chart of a preparation method of a polarized photodetector provided by the invention. Wherein, the step 1 is to put the mechanically stripped molybdenum disulfide film on the substrate, the step 2 is to lift the cadmium selenide film on the substrate, the step 3 is to CdSe/MoS 2 Electrodes are deposited on both sides of the heterojunction.
Regarding step a:
the types and specifications of the substrates are consistent with those in the above technical schemes, and are not described herein. The preparation method of the molybdenum disulfide film is preferably a mechanical stripping method. The specific operation of the mechanical stripping method preferably comprises: molybdenum disulfide is passed through adhesive tapeAnd folding for multiple times, and forming a few layers of molybdenum disulfide films on the base material under the adhesion of the blue film. Wherein, molybdenum disulfide is preferably molybdenum disulfide bulk material, and is peeled to the multilayer through tape adhesion material multiple times fifty percent discount. And then, adhering a plurality of layers of materials from the adhesive tape by adopting a blue film with weaker viscosity, and folding for many times to obtain a few-layer molybdenum disulfide two-dimensional material. Sticking a blue film stuck with a molybdenum disulfide two-dimensional material on SiO 2 The Si substrate is placed on a hot plate for heating. The type of tape is preferably 3M tape. The 3M adhesive tape is preferably folded for 7-10 times. The heating time on the hot plate is preferably 15-20 min, and the heating temperature is preferably 60-70 ℃. After cooling in a waiting period after heating is completed, the blue film is torn off, and a compound A is obtained.
Regarding step b:
the preparation method of the cadmium selenide film is preferably L-B film technology. The specific procedures for the L-B thin film technology preferably include: cadmium selenide solution is dripped on the surface of a subphase, wherein the subphase is aqueous solution, preferably deionized water, and the sliding barrier 5 is extruded to adjust the surface pressure, and then the lifting arm 6 is controlled to transfer the film to the surface of the substrate. Wherein, the drop-adding capacity of the cadmium selenide film is preferably 70-100 mu l. The substrate with molybdenum disulfide is placed on the pulling arm 6, and after waiting for volatilization, the surface pressure is increased by the pressing movement of the slide barrier 5. The lifting arm 6 is moved horizontally or vertically to transfer the film at a suitable speed. The concentration of the cadmium selenide solution is preferably 1mg/ml to 5mg/ml, and the volatilization time is preferably 5 min to 10min. The movement speed of the slide barrier 5 is preferably 20mm/min to 30mm/min. The speed of the lifting arm 6 is preferably 5 mm/min-10 mm/min. After the transfer film is completed by the pulling arm 6, the composite B is obtained by taking down and standing.
Regarding step c:
in CdSe/MoS 2 Two measurements of the heterojunction deposit electrodes separately. In the present invention, the electrode is preferably gold or gold/nickel.
The electrode is Jin Shi, and the deposition mode is preferably as follows: the substrate was placed right side up in an HDMS pretreatment system with a set temperature of 110 ℃ and a treatment time of 10min. The prepared CdSe/MoS 2 Placing the heterojunction on a spin coater to spread glue, and uniformly dripping the absorbed AZ5214 photoresist on the substratePreferably, spin coating is performed for 30 seconds at a spin speed of 4000 z/s. The thickness of the coated AZ5214 photoresist is 1.6-1.7 mu m, and the photoresist is baked for 90s in a constant temperature convection oven at 100 ℃ under the condition of no light after photoresist homogenization. Then placing the substrate after the photoresist baking into a photoetching machine for photoetching an electrode, evaporating the photoetched electrode pattern by using an electron beam, and evaporating an Au layer of 70-100 nm; then acetone is used for soaking for 10min, photoresist is removed, deionized water is used for scouring the substrate, and then a nitrogen gun is used for drying the surface, thus obtaining CdSe/MoS 2 Heterojunction polarized photodetectors. And then annealing the device at 150 ℃ for 20 min to improve the contact quality between the material and the metal electrode.
When the electrode is gold/nickel, the deposition method is preferably as follows: the substrate was placed right side up in an HDMS pretreatment system with a set temperature of 110 ℃ and a treatment time of 10min. The prepared CdSe/MoS 2 The heterojunction is placed on a spin coater for coating, the absorbed AZ5214 photoresist is uniformly dripped on the substrate, and the spin coating speed of the spin coater is preferably 4000z/s for 30s. The thickness of the coated AZ5214 photoresist is 1.6-1.7 mu m, and the photoresist is baked for 90s in a constant temperature convection oven at 100 ℃ under the condition of no light after photoresist homogenization. Then placing the substrate after the photoresist baking into a photoetching machine for photoetching an electrode, evaporating gold/nickel by using an electron beam to evaporate the photoetched electrode pattern, wherein the thickness of the Au layer is 70-100 nm, and the thickness of the Ni layer is 10-30 nm; then acetone is used for soaking for 10min, photoresist is removed, deionized water is used for scouring the substrate, and then a nitrogen gun is used for drying the surface, thus obtaining CdSe/MoS 2 Heterojunction polarized photodetectors. And then annealing the device at 150 ℃ for 20 min to improve the contact quality between the material and the metal electrode.
For a further understanding of the present invention, preferred embodiments of the invention are described below in conjunction with the examples, but it should be understood that these descriptions are merely intended to illustrate further features and advantages of the invention, and are not limiting of the claims of the invention.
Examples:
s1, preparing few-layer molybdenum disulfide film by mechanical stripping method
And taking out the molybdenum disulfide body material, and sticking the material to a plurality of folds through a 3M adhesive tape to be peeled to a plurality of layers. And then adopting a blue film with weaker viscosity to adhere a plurality of layers of materials from the 3M adhesive tape, and folding for many times to obtain a few-layer molybdenum disulfide two-dimensional material. And (3) sticking the blue film stuck with the molybdenum disulfide two-dimensional material on a SiO2/Si substrate, heating the substrate on a hot plate at 60 ℃ for 20 min, and tearing off the blue film after cooling the heated substrate.
Preparation of cadmium selenide film by S2, L-B film technology
Placing a SiO2/Si substrate with a molybdenum disulfide film on a lifting arm 6, taking out a polytetrafluoroethylene groove body and two sliding barriers 5, cleaning the groove body along one direction by using a soft brush or absorbent cotton marked by a random, cleaning the groove body by using deionized water, putting the groove body back on an instrument after cleaning, hanging a platinum sheet, putting the deionized water in the device, compressing the sliding barriers 5 to squeeze the liquid level to a certain extent, sucking impurities on the subphase surface by using a water suction pump, and opening the sliding barriers 5. 70 μl of a solution containing cadmium selenide material with a concentration of 1mg/ml-5mg/ml is dripped into the subphase surface of the cleaned L-B film drawing instrument by utilizing a micropipette, the sliding barrier 5 is moved at a speed of 20mm/min-30mm/min until the liquid level reaches a collapse pressure and then stopped, and then the control lifting arm 6 is lifted horizontally or vertically at a speed of 5mm mm/min-10 mm/min.

Claims (6)

1. CdSe/MoS-based 2 Heterojunction polarization photodetector, characterized by: comprises a substrate (1), and CdSe/MoS compounded on the surface of the substrate (1) 2 Heterojunction deposited on CdSe/MoS 2 Electrodes (4) at both ends of the heterojunction;
the CdSe/MoS 2 The heterojunction comprises a cadmium selenide nano rod and layered molybdenum disulfide, wherein the diameter of the cadmium selenide nano rod is 10 nm-1 mu m, and the size of the layered molybdenum disulfide is more than 1 mu m multiplied by 1 mu m.
2. A CdSe/MoS based composition according to claim 1 2 The preparation method of the heterojunction polarized photoelectric detector is characterized by comprising the following steps of:
comprises the following steps:
step a: arranging a few layers of molybdenum disulfide films on the surface of a substrate to obtain a composite A;
step b: arranging cadmium selenide nano rods on the surface of a few-layer molybdenum disulfide film in the complex A to obtain a complex B, and pulling the cadmium selenide nano rods by an L-B film preparation method to obtain the cadmium selenide nano rods which are orderly arranged;
step c: for CdSe/MoS on the complex B 2 And respectively depositing electrodes at two ends of the heterojunction to obtain the polarized photoelectric detector.
3. CdSe/MoS based according to claim 2 2 The preparation method of the heterojunction polarized photoelectric detector is characterized by comprising the following steps of: in the step a, a mechanical stripping method is utilized to obtain a few-layer molybdenum disulfide film on the surface of the substrate.
4. CdSe/MoS based according to claim 2 2 The preparation method of the heterojunction polarized photoelectric detector is characterized by comprising the following steps of: in the step B, the subphase in the L-B film preparation method is an aqueous solution, wherein the solvent of the cadmium selenide solution is toluene or chloroform, and the concentration of the cadmium selenide solution is 1mg/ml-5 mg/ml.
5. CdSe/MoS based according to claim 2 2 The preparation method of the heterojunction polarized photoelectric detector is characterized by comprising the following steps of: in the step c, the electrode adopts gold or gold/nickel;
the deposition method of the gold electrode comprises the following steps: to the CdSe/MoS 2 The heterojunction polarized photoelectric detector utilizes an electron beam evaporation system to evaporate a gold electrode on the surface, and the gold thickness is 70 nm-100 nm;
the deposition method of the gold/nickel electrode comprises the following steps: to the CdSe/MoS 2 The heterojunction polarized photodetector utilizes an electron beam evaporation system to evaporate gold/nickel electrodes on the surface.
6. CdSe/MoS based according to claim 2 2 Heterogeneous materialThe preparation method of the junction polarization photoelectric detector is characterized by comprising the following steps: when a gold electrode is adopted, the thickness of gold is 70 nm-100 nm; when gold/nickel electrodes are used, the gold thickness is 70nm to 100nm and the nickel thickness is 10nm to 30nm.
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