CN103681837A - Molybdenum disulfide-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof - Google Patents
Molybdenum disulfide-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof Download PDFInfo
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- CN103681837A CN103681837A CN201310580317.2A CN201310580317A CN103681837A CN 103681837 A CN103681837 A CN 103681837A CN 201310580317 A CN201310580317 A CN 201310580317A CN 103681837 A CN103681837 A CN 103681837A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 42
- 230000005669 field effect Effects 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- -1 Molybdenum disulfide-cadmium selenide Chemical compound 0.000 title abstract 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 37
- 229910052737 gold Inorganic materials 0.000 claims abstract description 29
- 239000010931 gold Substances 0.000 claims abstract description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 239000002131 composite material Substances 0.000 claims abstract description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 14
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 14
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 13
- 238000010894 electron beam technology Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 13
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002390 adhesive tape Substances 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 53
- 229910052750 molybdenum Inorganic materials 0.000 claims description 53
- 239000011733 molybdenum Substances 0.000 claims description 53
- 238000002156 mixing Methods 0.000 claims description 38
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 claims description 24
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- 239000011259 mixed solution Substances 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 6
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000005987 sulfurization reaction Methods 0.000 claims 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 abstract description 10
- 239000010410 layer Substances 0.000 abstract 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000011247 coating layer Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
Abstract
The invention discloses a molybdenum disulfide-cadmium selenide quantum dot hybrid field effect opto-transistor comprising, from the bottom to the top in turn, a Si/SiO2 composite wafer of a Si layer and a SiO2 layer, n layers of molybdenum disulfide layers, n=1-4, and two gold electrodes which are separated from each other and arranged on one plane, wherein a CdSe quantum dot layer is arranged between the two gold electrodes, and diameter of a CdSe quantum dot in the CdSe quantum dot layer is 3-8nm. A manufacturing method of the molybdenum disulfide-cadmium selenide quantum dot hybrid field effect opto-transistor is that: the molybdenum disulfide layers stripped from molybdenum disulfide crystal by using adhesive tapes are pasted on the cleaned Si/SiO2 composite wafer; polymethyl methacrylate is spin-coated on the molybdenum disulfide layers, and the gold electrodes are generated by etching coating layers via using an electron beam exposure method; Ni and Au are deposited on the electrodes in turn to act as a source electrode and a drain electrode via using an electron beam evaporation method, and a CdSe quantum dot solution is prepared; and the CdSe quantum dot solution is coated on the molybdenum disulfide layers between the two gold electrodes. The invention provides a new type of field effect opto-transistor.
Description
Technical field
The present invention relates to a kind of field effect optotransistor and manufacture method thereof, especially molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor and manufacture method thereof.
Background technology
Optotransistor is the photoelectric device consisting of three terminal devices such as bipolar transistor or field-effect transistors.Light is absorbed in the active area of this class device, produces photo-generated carrier, by internal electrical enlarger, produces photoelectric current gain, and optotransistor three end work, therefore easily realize automatically controlled or electric synchronous.Optotransistor material therefor is GaAs (CaAs) normally, is mainly divided into ambipolar optotransistor, field effect optotransistor and related device thereof.Ambipolar optotransistor conventionally gain is very high, and for GaAs-GaAlAs, amplification coefficient can be greater than 1000, and the response time is greater than nanosecond, is usually used in photo-detector, also can be used for light amplification.Field effect optotransistor fast response time (being about 50 psecs), is commonly used for hypervelocity photo-detector.Related to this also have many other plane photoelectric devices, and its feature is all speed fast (response times tens psec), it is integrated to be suitable for.
At present, in the up-to-date achievement in research in optical detection field, be the optotransistor based on quantum dot regulation and control.This optotransistor can provide the higher gain of light, and has smaller dark current.It is reported have the zinc oxide (AZO) of aluminium doping and the optotransistor mixed structure of PbS quantum dot strong to the absorption of infrared light, can be for the making of infrared band photodetector; The photoelectricity metal-oxide-semiconductor being obtained by mixing based on Graphene-PbS quantum dot, has 10
8the quantum efficiency of electronics/photon and 10
7the high sensitivity of A/W, minimum detectable 10
-15the light intensity of W; And the mixed light transistor arrangement of Single Walled Carbon Nanotube and quantum dot has strengthened this tower effect of light.Research to quantum dot mixed structure optotransistor is significant.
Summary of the invention
The object of the invention is for optical detection field provides a kind of its manufacture method of molybdenum bisuphide-CdSe quantum dots mixing field effect transistor of using semi-conducting material molybdenum bisuphide to build, for field effect optotransistor provides a kind of new varieties.
Molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor of the present invention, has Si layer and SiO from bottom to top successively
2the Si/SiO of layer
2composite crystal, n layer curing molybdenum layer, have CdSe quantum dot layer at n=1-4, two gold electrodes apart in same level between two gold electrodes, and the diameter of the CdSe quantum dot in CdSe quantum dot layer is 3-8nm.
Conventionally, Si/SiO
2the SiO of composite crystal
2the thickness of layer is 30-300nm, and Si layer thickness is 200 μ m.The thickness of CdSe quantum dot layer is 10-600nm.
The manufacture method of molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor of the present invention, comprises the steps:
1) use micromechanical forces method, with adhesive tape, from crystal of molybdenum disulfide, peel off n layer molybdenum bisuphide, n=1-4, then molybdenum bisuphide is pasted to the Si/SiO cleaning up
2the SiO of composite crystal
2on layer;
2) polymethyl methacrylate of spin coating mass concentration 1%-10% on curing molybdenum layer, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 20-100nmAu, as source electrode and the drain electrode of field effect optotransistor;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 0.5-2ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 2-4g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, reaction 0.1-1 hour, naturally cool to room temperature, obtain CdSe quantum dot solution;
5) the CdSe quantum dot solution that the method for employing spin coating makes step 4) is coated between two gold electrodes
molybdenum bisuphideon layer, obtain molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor;
In preparation process of the present invention, clean Si/SiO
2composite crystal can be first with deionized water, acetone and isopropyl alcohol, to clean successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans;
The time for exposure of electron beam exposure etching above-mentioned steps 2) is 1-2s, developing time 40s-1min.In the electron beam evaporation process of step 3), air pressure is controlled at 5 * 10
-3below Pa;
Molybdenum bisuphide has two dimensional crystal structure, and surfacing is a kind of semiconductor that is similar to graphene-structured, and its energy gap is 1.87eV.Utilize molybdenum bisuphide and CdSe quantum dot to mix, can produce molybdenum bisuphide field-effect transistor structure;
In molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor of the present invention, curing molybdenum layer is subject to the regulation and control of Si back-gate electrode, utilizes photoexcitation CdSe quantum dot and is built into field-effect transistor.The present invention provides a kind of new varieties for field effect optotransistor.
Accompanying drawing explanation
Fig. 1 is the structural representation of molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor;
Fig. 2 is the vertical view of molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor;
Fig. 3 is the relation of molybdenum bisuphide-CdSe quantum dots mixing field effect transistor grid voltage and drain current;
Fig. 4 is the relation of molybdenum bisuphide-CdSe quantum dots mixing field effect transistor drain current and drain voltage under different grid voltages.
Embodiment
Below in conjunction with accompanying drawing, further illustrate the present invention.
With reference to Fig. 1, Fig. 2, molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor of the present invention has Si layer 1 and SiO from bottom to top successively
2the Si/SiO of layer 2
2composite crystal, n layer curing molybdenum layer 3, have CdSe quantum dot layer 5 at n=1-4, two gold electrodes apart in same level 4 between two gold electrodes 4, and the diameter of the CdSe quantum dot in CdSe quantum dot layer 5 is 3-8nm.
Embodiment 1:
1) by Si/SiO
2composite crystal cleans with deionized water, acetone and isopropyl alcohol successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans; With adhesive tape, from crystal of molybdenum disulfide, peel off individual layer molybdenum bisuphide and paste the Si/SiO cleaning up
2the SiO of wafer
2on layer, SiO wherein
2layer thickness 250nm;
2) polymethyl methacrylate of spin coating mass concentration 10% (PMMA) on molybdenum bisuphide, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure, and the time for exposure of electron beam exposure etching is 2s, developing time 40s;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 20nmAu, in electron beam evaporation process, air pressure is controlled at 5 * 10
-3pa;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 1ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 3g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, react 0.3 hour, naturally cool to room temperature, obtain CdSe quantum dot liquid, CdSe lateral size of dots is 5nm;
5) the CdSe quantum dot layer that the method for employing spin coating makes step 4) is coated on two blocks of individual layer molybdenum bisuphide between gold electrode, and CdSe quantum dot layer applies thick 550nm, obtains molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor.
This routine molybdenum bisuphide-CdSe quantum dots mixing field effect transistor is at wavelength 532nm(Nd
3+ YAG frequency double laser), the green laser of power 1.7pw excites the relation of lower grid voltage and drain current to see Fig. 3.Under different grid voltages, the relation of drain current and drain voltage is shown in Fig. 4.
Embodiment 2:
1) by Si/SiO
2composite crystal cleans with deionized water, acetone and isopropyl alcohol successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans; With adhesive tape, from crystal of molybdenum disulfide, peel off four layers of molybdenum bisuphide and paste the Si/SiO cleaning up
2the SiO of wafer
2on layer, SiO wherein
2layer thickness 300nm;
2) PMMA of spin coating mass concentration 1% on three layers of molybdenum bisuphide, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure, and the time for exposure of electron beam exposure etching is 1s, developing time 1min;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 80nmAu, in electron beam evaporation process, air pressure is controlled at 5 * 10
-3pa;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 2ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 2g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, react 0.8 hour, naturally cool to room temperature, obtain CdSe quantum dot solution, CdSe lateral size of dots is 8n;
5) the CdSe quantum dot layer that the method for employing spin coating makes step 4) is coated on four layers of molybdenum bisuphide between two gold electrodes, and CdSe quantum dot layer applies thick 100nm, obtains molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor.
Embodiment 3:
1) by Si/SiO
2composite crystal cleans with deionized water, acetone and isopropyl alcohol successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans; With adhesive tape, from crystal of molybdenum disulfide, peel off 2 layers of molybdenum bisuphide and paste the Si/SiO cleaning up
2the SiO of wafer
2on layer, SiO wherein
2layer thickness 280nm;
2) PMMA of spin coating mass concentration 5% on curing molybdenum layer, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure, and the time for exposure of electron beam exposure etching is 2s, developing time 50s;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 40nmAu, in electron beam evaporation process, air pressure is controlled at 5 * 10
-3pa;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 0.5ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 1g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, react 1 hour, naturally cool to room temperature, obtain CdSe quantum dot liquid, CdSe lateral size of dots is 3nm;
5) the CdSe quantum dot layer method step 4 of employing spin coating) making is coated on 2 layers of molybdenum bisuphide between two gold electrodes, and CdSe quantum dot layer applies thick 488nm, obtains molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor.
Embodiment 4:
1) by Si/SiO
2composite crystal cleans with deionized water, acetone and isopropyl alcohol successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans; With adhesive tape, from crystal of molybdenum disulfide, peel off individual layer molybdenum bisuphide and paste the Si/SiO cleaning up
2the SiO of wafer
2on layer, SiO wherein
2layer thickness 250nm;
2) PMMA of spin coating mass concentration 10% on molybdenum bisuphide, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure, and the time for exposure of electron beam exposure etching is 2s, developing time 40s;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 20nmAu, in electron beam evaporation process, air pressure is controlled at 5 * 10
-3pa;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 2ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 4g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, react 0.1 hour, naturally cool to room temperature, obtain CdSe quantum dot liquid, CdSe lateral size of dots is 6nm.
5) the CdSe quantum dot layer that the method for employing spin coating makes step 4) is coated on two blocks of individual layer molybdenum bisuphide between gold electrode, and CdSe quantum dot layer applies thick 50nm, obtains molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor.
Claims (7)
1. molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor, is characterized in that having successively Si layer (1) and SiO from bottom to top
2the Si/SiO of layer (2)
2composite crystal, n layer
twosulfuration molybdenum layer (3), has CdSe quantum dot layer (5) at n=1-4, two gold electrodes apart in same level (4) between two gold electrodes (4), and the diameter of the CdSe quantum dot in CdSe quantum dot layer (5) is 3-8nm.
2. molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor field effect optotransistor according to claim 1, is characterized in that Si/SiO
2the SiO of composite crystal
2the thickness of layer (2) is 30-300nm, and Si layer (1) thickness is 200 μ m.
3. molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor according to claim 1, the thickness that it is characterized in that CdSe quantum dot layer (5) is 10-600nm.
4. the method for the molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor field effect optotransistor described in manufacture claim 1, is characterized in that comprising the steps:
1) use micromechanical forces method, with adhesive tape from
twoon molybdenum sulfide crystal, peel off n layer molybdenum bisuphide, n=1-4, then molybdenum bisuphide is pasted to the Si/SiO cleaning up
2the SiO of composite crystal
2on layer;
2) polymethyl methacrylate of spin coating mass concentration 1%-10% on curing molybdenum layer, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 20-100nmAu, as source electrode and the drain electrode of field effect optotransistor;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 0.5-2ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 2-4g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, reaction 0.1-1 hour, naturally cool to room temperature, obtain CdSe quantum dot solution;
5) the CdSe quantum dot solution that the method for employing spin coating makes step 4) is coated on two curing molybdenum layers between gold electrode, obtains molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor.
5. the manufacture method of molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor according to claim 4, is characterized in that described cleaning Si/SiO
2composite crystal is first with deionized water, acetone and isopropyl alcohol, to clean successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans.
6. the manufacture method of molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor according to claim 1, is characterized in that step 2) time for exposure of electron beam exposure etching be 1-2s, developing time 40s-1min.
7. the manufacture method of molybdenum bisuphide-CdSe quantum dots mixing field effect optotransistor according to claim 1, is characterized in that in the electron beam evaporation process of step 3), air pressure is controlled at 5 * 10
-3below Pa.
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| CN104882542A (en) * | 2015-05-28 | 2015-09-02 | 福州大学 | Light-operated film transistor preparation method based on metal/organic shell-core quantum dot-semiconductor quantum dot composite structure |
| CN105470320A (en) * | 2015-12-07 | 2016-04-06 | 浙江大学 | Molybdenum disulfide/semiconductor heterojunction photoelectric detector and manufacturing method therefor |
| CN105676259A (en) * | 2016-01-27 | 2016-06-15 | 无锡盈芯半导体科技有限公司 | Scintillator detector based on molybdenum disulfide transistor and manufacturing method thereof |
| CN104051275B (en) * | 2014-06-28 | 2016-09-07 | 福州大学 | A kind of preparation method of FET based on quantum dot film layer conducting channel |
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| CN111403473A (en) * | 2020-03-09 | 2020-07-10 | 华中科技大学 | Two-dimensional material-based field effect rectifier and preparation method thereof |
| CN116344662A (en) * | 2023-05-25 | 2023-06-27 | 长春理工大学 | CdSe/MoS-based 2 Heterojunction polarized photoelectric detector and preparation method thereof |
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|---|---|---|---|---|
| CN104051275B (en) * | 2014-06-28 | 2016-09-07 | 福州大学 | A kind of preparation method of FET based on quantum dot film layer conducting channel |
| CN104882542A (en) * | 2015-05-28 | 2015-09-02 | 福州大学 | Light-operated film transistor preparation method based on metal/organic shell-core quantum dot-semiconductor quantum dot composite structure |
| CN104882542B (en) * | 2015-05-28 | 2017-06-06 | 福州大学 | It is a kind of based on metal/have the preparation method of the casing nuclear quantum dot light-operated thin film transistor (TFT) of semiconductor-quantum-point composite construction |
| CN105470320A (en) * | 2015-12-07 | 2016-04-06 | 浙江大学 | Molybdenum disulfide/semiconductor heterojunction photoelectric detector and manufacturing method therefor |
| CN105676259A (en) * | 2016-01-27 | 2016-06-15 | 无锡盈芯半导体科技有限公司 | Scintillator detector based on molybdenum disulfide transistor and manufacturing method thereof |
| CN109115359A (en) * | 2018-09-20 | 2019-01-01 | 广西师范大学 | A kind of temperature sensor based on hybrid plasma waveguide |
| CN111403473A (en) * | 2020-03-09 | 2020-07-10 | 华中科技大学 | Two-dimensional material-based field effect rectifier and preparation method thereof |
| CN116344662A (en) * | 2023-05-25 | 2023-06-27 | 长春理工大学 | CdSe/MoS-based 2 Heterojunction polarized photoelectric detector and preparation method thereof |
| CN116344662B (en) * | 2023-05-25 | 2023-08-22 | 长春理工大学 | CdSe/MoS-based 2 Heterojunction polarized photoelectric detector and preparation method thereof |
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