CN103681939A - Boron nitride-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof - Google Patents
Boron nitride-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof Download PDFInfo
- Publication number
- CN103681939A CN103681939A CN201310580655.6A CN201310580655A CN103681939A CN 103681939 A CN103681939 A CN 103681939A CN 201310580655 A CN201310580655 A CN 201310580655A CN 103681939 A CN103681939 A CN 103681939A
- Authority
- CN
- China
- Prior art keywords
- boron nitride
- cdse quantum
- layer
- quantum dot
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 41
- 230000005669 field effect Effects 0.000 title claims abstract description 37
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052582 BN Inorganic materials 0.000 claims abstract description 39
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 38
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052737 gold Inorganic materials 0.000 claims abstract description 29
- 239000010931 gold Substances 0.000 claims abstract description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 239000002131 composite material Substances 0.000 claims abstract description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 14
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 14
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 13
- 238000010894 electron beam technology Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000002390 adhesive tape Substances 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims description 38
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 claims description 24
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- 239000011259 mixed solution Substances 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 6
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 9
- 239000011247 coating layer Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1127—Devices with PN heterojunction gate
- H01L31/1129—Devices with PN heterojunction gate the device being a field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a boron nitride-cadmium selenide quantum dot hybrid field effect opto-transistor comprising, from the bottom to the top in turn, a Si/SiO2 composite wafer of a Si layer and a SiO2 layer, n layers of boron nitride layers, n=1-8, and two gold electrodes which are separated from each other and arranged on one plane, wherein a CdSe quantum dot layer is arranged between the two gold electrodes, and diameter of a CdSe quantum dot in the CdSe quantum dot layer is 3-8nm. A manufacturing method of the boron nitride-cadmium selenide quantum dot hybrid field effect opto-transistor is that: the boron nitride layers stripped from hexagonal boron nitride crystal by using adhesive tapes are pasted on the cleaned Si/SiO2 composite wafer; polymethyl methacrylate is spin-coated on the boron nitride layers, and the gold electrodes are generated by etching coating layers via using an electron beam exposure method; Ni and Au are deposited on the electrodes in turn to act as a source electrode and a drain electrode via using an electron beam evaporation method, and a CdSe quantum dot solution is prepared; and the CdSe quantum dot solution is coated on the boron nitride layers between the two gold electrodes. The invention provides a new type of field effect opto-transistor.
Description
Technical field
The present invention relates to a kind of field effect optotransistor and manufacture method thereof, especially boron nitride-CdSe quantum dots mixing field effect optotransistor and manufacture method thereof.
Background technology
Optotransistor is the photoelectric device consisting of three terminal devices such as bipolar transistor or field-effect transistors.Light is absorbed in the active area of this class device, produces photo-generated carrier, by internal electrical enlarger, produces photoelectric current gain, and optotransistor three end work, therefore easily realize automatically controlled or electric synchronous.Optotransistor material therefor is GaAs (CaAs) normally, is mainly divided into ambipolar optotransistor, field effect optotransistor and related device thereof.Ambipolar optotransistor conventionally gain is very high, and for GaAs-GaAlAs, amplification coefficient can be greater than 1000, and the response time is greater than nanosecond, is usually used in photo-detector, also can be used for light amplification.Field effect optotransistor fast response time (being about 50 psecs), is commonly used for hypervelocity photo-detector.Related to this also have many other plane photoelectric devices, and its feature is all speed fast (response times tens psec), it is integrated to be suitable for.
At present, in the up-to-date achievement in research in optical detection field, be the optotransistor based on quantum dot regulation and control.This optotransistor can provide the higher gain of light, and has smaller dark current.It is reported have the zinc oxide (AZO) of aluminium doping and the optotransistor mixed structure of PbS quantum dot strong to the absorption of infrared light, can be for the making of infrared band photodetector; The photoelectricity metal-oxide-semiconductor being obtained by mixing based on Graphene-PbS quantum dot, has 10
8the quantum efficiency of electronics/photon and 10
7the high sensitivity of A/W, minimum detectable 10
-15the light intensity of W; And the mixed light transistor arrangement of Single Walled Carbon Nanotube and quantum dot has strengthened this tower effect of light.Research to quantum dot mixed structure optotransistor is significant.
Summary of the invention
The object of the invention is for optical detection field provides a kind of boron nitride-CdSe quantum dots mixing field effect optotransistor and manufacture method thereof that makes broad stopband insulating material boron nitride become conductor under photodoping, for field effect optotransistor provides a kind of new varieties.
Boron nitride-CdSe quantum dots mixing field effect optotransistor of the present invention, has Si layer and SiO from bottom to top successively
2the Si/SiO of layer
2composite crystal, n layer boron nitride layer, have CdSe quantum dot layer at n=1-8, two gold electrodes apart in same level between two gold electrodes, and the diameter of the CdSe quantum dot in CdSe quantum dot layer is 3-8nm.
Conventionally, Si/SiO
2the SiO of composite crystal
2the thickness of layer is 30-300nm, and Si layer thickness is 200 μ m.The thickness of CdSe quantum dot layer is 10-600nm.
The manufacture method of boron nitride-CdSe quantum dots mixing field effect optotransistor of the present invention, comprises the steps:
1) use micromechanical forces method, with adhesive tape, from hexagonal boron nitride crystal, peel off n layer boron nitride, n=1-8, then boron nitride is pasted to the Si/SiO cleaning up
2the SiO of composite crystal
2on layer;
2) polymethyl methacrylate of spin coating mass concentration 1%-10% on boron nitride layer, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 20-100nmAu, as source electrode and the drain electrode of field effect optotransistor;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 0.5-2ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 2-4g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, reaction 0.1-1 hour, naturally cool to room temperature, obtain CdSe quantum dot solution;
5) the CdSe quantum dot solution that the method for employing spin coating makes step 4) is coated on two boron nitride layers between gold electrode, obtains boron nitride-CdSe quantum dots mixing field effect optotransistor.
In preparation process of the present invention, clean Si/SiO
2composite crystal can be first with deionized water, acetone and isopropyl alcohol, to clean successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans.
The time for exposure of electron beam exposure etching above-mentioned steps 2) is 1-2s, developing time 40s-1min.In the electron beam evaporation process of step 3), air pressure is controlled at 5 * 10
-3below Pa.
Hexagonal boron nitride has two dimensional crystal structure, and surfacing is a kind of broad stopband insulator, and the energy gap that it has 5.6eV, is a kind of insulator of not easy conductive.Utilize boron nitride and CdSe quantum dot to mix, can impel insulating material conduction.
In boron nitride-CdSe quantum dots mixing field effect optotransistor of the present invention, boron nitride layer is subject to the regulation and control of Si back-gate electrode, utilizes photoexcitation can impel broad stopband insulating material boron nitride conduction, realizes insulating material to the conversion process of conductor material.The present invention provides a kind of new varieties for field effect optotransistor.
Accompanying drawing explanation
Fig. 1 is the structural representation of boron nitride-CdSe quantum dots mixing field effect optotransistor;
Fig. 2 is the vertical view of boron nitride-CdSe quantum dots mixing field effect optotransistor;
Fig. 3 is the relation of boron nitride-CdSe quantum dots mixing field effect transistor grid voltage and drain current;
Fig. 4 is the relation of boron nitride-CdSe quantum dots mixing field effect transistor drain current and drain voltage under different grid voltages.
Embodiment
Below in conjunction with accompanying drawing, further illustrate the present invention.
With reference to Fig. 1, Fig. 2, boron nitride-CdSe quantum dots mixing field effect optotransistor of the present invention has Si layer 1 and SiO from bottom to top successively
2the Si/SiO of layer 2
2composite crystal, n layer boron nitride layer 3, have CdSe quantum dot layer 5 at n=1-8, two gold electrodes apart in same level 4 between two gold electrodes 4, and the diameter of the CdSe quantum dot in CdSe quantum dot layer 5 is 3-8nm.
Embodiment 1:
1) by Si/SiO
2composite crystal cleans with deionized water, acetone and isopropyl alcohol successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans; With adhesive tape, from hexagonal boron nitride crystal, peel off individual layer boron nitride and paste the Si/SiO cleaning up
2the SiO of wafer
2on layer, SiO wherein
2layer thickness 250nm;
2) polymethyl methacrylate of spin coating mass concentration 10% (PMMA) on boron nitride, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure, and the time for exposure of electron beam exposure etching is 2s, developing time 40s;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 20nmAu, in electron beam evaporation process, air pressure is controlled at 5 * 10
-3pa;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 1ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 3g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, react 0.3 hour, naturally cool to room temperature, obtain CdSe quantum dot liquid, CdSe lateral size of dots is 5nm;
5) the CdSe quantum dot layer that the method for employing spin coating makes step 4) is coated on two individual layer boron nitride between gold electrode, and CdSe quantum dot layer applies thick 550nm, obtains boron nitride-CdSe quantum dots mixing field effect optotransistor.
This routine boron nitride-CdSe quantum dots mixing field effect transistor is at wavelength 532nm(Nd
3+ YAG frequency double laser) green laser of power 1.7pw excites the relation of lower grid voltage and drain current to see Fig. 3.Under different grid voltages, the relation of drain current and drain voltage is shown in Fig. 4.
Embodiment 2:
1) Si/SiO2 composite crystal is cleaned with deionized water, acetone and isopropyl alcohol successively, and then use O
2: the mixing plasma gas of Ar=1:1 cleans; With adhesive tape, from hexagonal boron nitride crystal, peel off three layers of boron nitride and paste the Si/SiO cleaning up
2the SiO of wafer
2on layer, SiO wherein
2layer thickness 300nm;
2) PMMA of spin coating mass concentration 1% on three layers of boron nitride, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure, and the time for exposure of electron beam exposure etching is 1s, developing time 1min;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 80nmAu, in electron beam evaporation process, air pressure is controlled at 5 * 10
-3pa;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 2ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 2g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, react 0.8 hour, naturally cool to room temperature, obtain CdSe quantum dot solution, CdSe lateral size of dots is 8nm;
5) the CdSe quantum dot layer that the method for employing spin coating makes step 4) is coated on three layers of boron nitride between two gold electrodes, and CdSe quantum dot layer applies thick 340nm, obtains boron nitride-CdSe quantum dots mixing field effect optotransistor.
Embodiment 3:
1) by Si/SiO
2composite crystal cleans with deionized water, acetone and isopropyl alcohol successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans; With adhesive tape, from hexagonal boron nitride crystal, peel off 8 layers of boron nitride and paste the Si/SiO cleaning up
2the SiO of wafer
2on layer, SiO wherein
2layer thickness 280nm;
2) PMMA of spin coating mass concentration 5% on boron nitride layer, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure, and the time for exposure of electron beam exposure etching is 2s, developing time 50s;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 40nmAu, in electron beam evaporation process, air pressure is controlled at 5 * 10
-3pa;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 0.5ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 1g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, react 1 hour, naturally cool to room temperature, obtain CdSe quantum dot liquid, CdSe lateral size of dots is 3nm;
5) the CdSe quantum dot layer method step 4 of employing spin coating) making is coated on 8 layers of boron nitride layer between two gold electrodes, and CdSe quantum dot layer applies thick 278nm, obtains boron nitride-CdSe quantum dots mixing field effect optotransistor.
Embodiment 4:
1) by Si/SiO
2composite crystal cleans with deionized water, acetone and isopropyl alcohol successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans; With adhesive tape, from hexagonal boron nitride crystal, peel off individual layer boron nitride and paste the Si/SiO cleaning up
2the SiO of wafer
2on layer, SiO wherein
2layer thickness 250nm;
2) PMMA of spin coating mass concentration 10% on boron nitride, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure, and the time for exposure of electron beam exposure etching is 2s, developing time 40s;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 20nmAu, in electron beam evaporation process, air pressure is controlled at 5 * 10
-3pa;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 2ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 4g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, react 0.1 hour, naturally cool to room temperature, obtain CdSe quantum dot liquid, CdSe lateral size of dots is 6nm.
5) the CdSe quantum dot layer that the method for employing spin coating makes step 4) is coated on two individual layer boron nitride between gold electrode, and CdSe quantum dot layer applies thick 15nm, obtains boron nitride-CdSe quantum dots mixing field effect optotransistor.
Claims (7)
1. boron nitride-CdSe quantum dots mixing field effect optotransistor, is characterized in that having successively Si layer (1) and SiO from bottom to top
2the Si/SiO of layer (2)
2composite crystal, n layer boron nitride layer (3), n=1-8, two gold electrodes apart in same level (4), between two gold electrodes (4), have CdSe quantum dot layer (5), the diameter of the CdSe quantum dot in CdSe quantum dot layer (5) is 3-8nm.
2. boron nitride-CdSe quantum dots mixing field effect optotransistor according to claim 1, is characterized in that Si/SiO
2the SiO of composite crystal
2the thickness of layer (2) is 30-300nm, and Si layer (1) thickness is 200 μ m.
3. boron nitride-CdSe quantum dots mixing field effect optotransistor according to claim 1, the thickness that it is characterized in that CdSe quantum dot layer (5) is 10-600nm.
4. the method for the boron nitride-CdSe quantum dots mixing field effect optotransistor described in manufacture claim 1, is characterized in that comprising the steps:
1) use micromechanical forces method, with adhesive tape, from hexagonal boron nitride crystal, peel off n layer boron nitride, n=1-8, then boron nitride is pasted to the Si/SiO cleaning up
2the SiO of composite crystal
2on layer;
2) polymethyl methacrylate of spin coating mass concentration 1%-10% on boron nitride layer, adopts electron beam exposure method in polymethyl methacrylate coating, to etch gold electrode figure;
3) adopt electron beam evaporation method, on the gold electrode figure of etching, deposit successively 5nmNi and 20-100nmAu, as source electrode and the drain electrode of field effect optotransistor;
4) hydroxypropyl acrylate is fully dissolved in TOPO, obtains TOPO hydroxypropyl acrylate mixed solution, in mixed solution, the mass concentration of hydroxypropyl acrylate is 8%; By Se, Cd (CH
3)
2with tributylphosphine 1:2:38 mixing in mass ratio, obtain storing solution, 0.5-2ml storing solution is poured in the above-mentioned TOPO hydroxypropyl acrylate of the 2-4g mixed solution that is heated to 360 ℃, keep 360 ℃ temperature-resistant, reaction 0.1-1 hour, naturally cool to room temperature, obtain CdSe quantum dot solution;
5) the CdSe quantum dot solution that the method for employing spin coating makes step 4) is coated on two boron nitride layers between gold electrode, obtains boron nitride-CdSe quantum dots mixing field effect optotransistor.
5. the manufacture method of boron nitride-CdSe quantum dots mixing field effect optotransistor according to claim 4, is characterized in that described cleaning Si/SiO
2composite crystal is first with deionized water, acetone and isopropyl alcohol, to clean successively, and then uses O
2: the mixing plasma gas of Ar=1:1 cleans.
6. the manufacture method of boron nitride-CdSe quantum dots mixing field effect optotransistor according to claim 1, is characterized in that step 2) time for exposure of electron beam exposure etching be 1-2s, developing time 40s-1min.
7. the manufacture method of boron nitride-CdSe quantum dots mixing field effect optotransistor according to claim 1, is characterized in that in the electron beam evaporation process of step 3), air pressure is controlled at 5 * 10
-3below Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310580655.6A CN103681939A (en) | 2013-11-19 | 2013-11-19 | Boron nitride-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310580655.6A CN103681939A (en) | 2013-11-19 | 2013-11-19 | Boron nitride-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103681939A true CN103681939A (en) | 2014-03-26 |
Family
ID=50318856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310580655.6A Pending CN103681939A (en) | 2013-11-19 | 2013-11-19 | Boron nitride-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103681939A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379873A (en) * | 2019-07-30 | 2019-10-25 | 纳晶科技股份有限公司 | A kind of quantum point detector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101252148A (en) * | 2007-02-23 | 2008-08-27 | 高丽大学校产学协力团 | Nonvolatile memory electronic device |
| CN102185004A (en) * | 2011-04-02 | 2011-09-14 | 复旦大学 | Graphene field effect transistor with photoconduction effect and infrared detector |
| WO2013017605A1 (en) * | 2011-08-02 | 2013-02-07 | Fundació Institut De Ciències Fotòniques | Optoelectronic platform with carbon based conductor and quantum dots, and transistor comprising such a platform |
| US20130049738A1 (en) * | 2011-08-28 | 2013-02-28 | Edward Hartley Sargent | Quantum dot photo-field-effect transistor |
-
2013
- 2013-11-19 CN CN201310580655.6A patent/CN103681939A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101252148A (en) * | 2007-02-23 | 2008-08-27 | 高丽大学校产学协力团 | Nonvolatile memory electronic device |
| CN102185004A (en) * | 2011-04-02 | 2011-09-14 | 复旦大学 | Graphene field effect transistor with photoconduction effect and infrared detector |
| WO2013017605A1 (en) * | 2011-08-02 | 2013-02-07 | Fundació Institut De Ciències Fotòniques | Optoelectronic platform with carbon based conductor and quantum dots, and transistor comprising such a platform |
| US20130049738A1 (en) * | 2011-08-28 | 2013-02-28 | Edward Hartley Sargent | Quantum dot photo-field-effect transistor |
Non-Patent Citations (3)
| Title |
|---|
| LOPEZ-SANCHEZ ORIOL， LEMBKE DOMINIK，KAYCI METIN: "Ultrasensitive photodetectors based on monolayer MoS2", 《NATURE NANOTECHNOLOGY》, vol. 8, no. 7, 31 July 2013 (2013-07-31) * |
| MURRAY C B, NORRIS D J, BAWENDI M G: "Synthesis and characterization of nearly monodisperse CdE (CdS, Se, Te) semiconductor nanocrystallites", 《J.AM. CHEM. SOC.》, vol. 115, 21 December 1993 (1993-12-21) * |
| 李建华: "CdSe量子点的制备及修饰剂对其测定金属离子影响的研究", 《成都理工大学硕士学位论文》, 1 June 2011 (2011-06-01) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379873A (en) * | 2019-07-30 | 2019-10-25 | 纳晶科技股份有限公司 | A kind of quantum point detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103682102A (en) | Graphene field effect opto-transistor and manufacturing method thereof | |
| CN103681837A (en) | Molybdenum disulfide-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof | |
| Wang et al. | Optimizing performance of silicon-based p–n junction photodetectors by the piezo-phototronic effect | |
| Zheng et al. | Tin dioxide quantum dots coupled with graphene for high-performance bulk-silicon Schottky photodetector | |
| Liang et al. | High-efficiency nanostructured window GaAs solar cells | |
| Wang et al. | A CuO nanowire infrared photodetector | |
| CN102201483B (en) | Silicon nanowire grating resonant enhanced photoelectric detector and manufacturing method thereof | |
| Shin et al. | Graphene/porous silicon Schottky-junction solar cells | |
| CN106601857A (en) | Photoconductive detector based on boron-doped silicon quantum dot/graphene/silicon dioxide and preparation method thereof | |
| KR101073287B1 (en) | Paste and Manufacturing method of solar cell using the same | |
| CN105552131B (en) | Light modulation thin film transistor (TFT) based on quantum dot-doped gate insulation layer | |
| CN105742394A (en) | Black phosphorus/graphene heterostructure-based ultraviolet detector and production method thereof | |
| CN103681938A (en) | Boron nitride-zinc oxide quantum dot hybrid field effect opto-transistor and manufacturing method thereof | |
| CN104157720B (en) | A kind of silica-based avalanche photodetector of Graphene and preparation method of mixed structure | |
| CN102545046B (en) | Method for manufacturing Whispering-gallery mode micro-cavity laser diode | |
| CN103681940A (en) | Molybdenum disulfide-zinc oxide quantum dot hybrid field effect opto-transistor and manufacturing method thereof | |
| CN104300027A (en) | Graphene/silicon dioxide/ silicon based avalanche photodetector and preparation method thereof | |
| Chen et al. | Enhanced photoresponsivity in carbon quantum dots-coupled graphene/silicon Schottky-junction photodetector | |
| CN104576789B (en) | Graphene oxide is as the detector and preparation method thereof of barrier layer and tunnel layer | |
| CN110190150B (en) | Broadband high-performance photoelectric detector based on palladium selenide thin film/silicon cone packaging structure heterojunction and manufacturing method thereof | |
| CN111211186A (en) | MoS for improving photoelectric detection performance2Phototransistor and method of manufacturing the same | |
| CN103681939A (en) | Boron nitride-cadmium selenide quantum dot hybrid field effect opto-transistor and manufacturing method thereof | |
| CN103258895A (en) | Plane electron emission optical detector with bottom grid control electrode | |
| Zhang et al. | Core-shell structured Si/ZnO photovoltaics | |
| Hou et al. | A ZnO nanowire photodetector with an ir electrode integrated on a triple junction solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140326 |