CN104300027A - Graphene/silicon dioxide/ silicon based avalanche photodetector and preparation method thereof - Google Patents
Graphene/silicon dioxide/ silicon based avalanche photodetector and preparation method thereof Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 218
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 109
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 108
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010703 silicon Substances 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 19
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 13
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000011889 copper foil Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 229910000846 In alloy Inorganic materials 0.000 claims description 2
- 239000004341 Octafluorocyclobutane Substances 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 2
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- 239000010409 thin film Substances 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
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- 238000009413 insulation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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Abstract
The invention discloses a graphene/silicon dioxide/silicon based avalanche photodetector and a preparation method thereof. The avalanche photodetector comprises an n-type silicon substrate, a silicon dioxide isolation layer, a silicon dioxide window, a silicon dioxide insulating layer, a top electrode, a graphene thin film and a bottom electrode. The avalanche photodetector can carry out wide-spectrum detection, thereby solving a problem of low response of traditional silicon substrate PIN nodes for ultraviolet light detection. The detector takes graphene as an active layer and a transparent electrode, thereby removing a dead layer, and enhancing absorption for incident light. The silicon dioxide insulating layer reduces influences of the silicon surface state, and suppresses reverse saturation current at the same time. Photon-generated carriers collide with silicon lattices under an effect of high reverse bias voltage and are ionized, and a very high gain is acquired. The preparation technology adopted by the invention is simple, the cost is low, and the avalanche photodetector has the characteristics of high response degree, high response speed, large internal gain, small switch ratio and easy integration.
Description
Technical field
The invention belongs to technical field of photoelectric detection, relate to photoelectric detector structure, particularly relate to a kind of avalanche photodetector based on graphene/silicon dioxide/silicon (APD) and preparation method.
Background technology
Optical detector has a wide range of applications in chemical material analysis, health care, space technology etc.Avalanche photodetector has high sensitivity, high optic response, the advantages such as fast response time, in High Speed Modulation and small-signal monitoring, have important application.The silica-based PIN junction type sensitive detection parts of tradition need thermal diffusion or ion implantation technology, and there is dead layer problem to ultraviolet light, respond and reduce rapidly with the reduction of lambda1-wavelength.Therefore, silicon light-detecting device is needed to improve to short-wavelength visible light to the response of ultraviolet light.
Graphene is by individual layer sp
2the cellular two dimensional surface crystal film that hydbridized carbon atoms is formed, has excellent power, heat, the performance such as optical, electrical.Different from common metal, Graphene a kind ofly has transparent and flexible New Two Dimensional electric conducting material.Graphene contacts with silicon can form schottky junction, and preparation technology is simple, is widely used in photodetection field.Because Graphene is very thin, the schottky junction formed is shallow junction, reduces surface recombination, can solve dead layer problem, improves ultraviolet optics response.
Schottky junction is a kind of conventional device architecture, at the existing a lot of report of the research of opto-electronic device.The dark current of Schottky junction structure detector is greater than the dark current of PIN structural device, and the dark current of device is a very important parameter, and it affects the noise of device, and this inhibits the development of Schottky junction structure detector to a certain extent.Therefore, need the dark current reducing Schottky junction structure detector, the performance of device is improved.
Summary of the invention
The object of the invention is to for the deficiencies in the prior art, a kind of avalanche photodetector based on graphene/silicon dioxide/silicon and preparation method are provided.
The object of the invention is to be achieved through the following technical solutions: based on the avalanche photodetector of graphene/silicon dioxide/silicon, comprising: N-shaped silicon substrate, silicon dioxide separator, silicon dioxide window, silicon dioxide insulating layer, top electrode, graphene film and hearth electrode; Wherein, the upper surface of described N-shaped silicon substrate covers silicon dioxide separator, silicon dioxide separator has silicon dioxide window, make silicon dioxide separator concavity structure, top electrode is covered at the upper surface of silicon dioxide separator, the border of top electrode is less than the border of silicon dioxide separator, covers silicon dioxide insulating layer at silicon dioxide window and N-shaped silicon substrate intersection; Cover graphene film at the upper surface of silicon dioxide separator and the madial wall of top electrode opening, the upper surface of top electrode and silicon dioxide insulating layer, the coverage of top electrode upper surface graphene film is less than the border of top electrode; At N-shaped silicon substrate lower surface, hearth electrode is set.
Further, described silicon dioxide insulating layer thickness is 1.5nm ~ 2.5nm.
Further, described top electrode is metal film electrode, and metal material is aluminium, gold or golden evanohm.
Further, described hearth electrode is metal film electrode, and metal material is gallium-indium alloy, titanium alloy or aluminium.
Prepare the method for the above-mentioned avalanche photodetector based on graphene/silicon dioxide/silicon, comprise the following steps:
(1) at the upper surface oxidation growth silicon dioxide separator of N-shaped silicon substrate, the resistivity of N-shaped silicon substrate used is 1 ~ 10 Ω cm; The thickness of silicon dioxide separator is 300nm ~ 500nm, and growth temperature is 900 ~ 1200 DEG C;
(2) make top electrode figure by lithography in silicon dioxide insulation surface, then adopt electron beam evaporation technique, first growth thickness is about the chromium adhesion layer of 5nm, then grows the gold electrode of 50nm;
(3) the silicon dioxide insulation surface of top electrode is had to make silicon dioxide graph window by lithography in growth, then reactive ion etching technology is passed through, adopt octafluorocyclobutane plasma etching silicon dioxide separator, and with the silicon dioxide that buffered oxide etch solution removal remains; Wherein, described buffered oxide etch solution is by NH
4f, HF and water composition, NH
4f:HF:H
2o=60g:30ml:100ml;
(4) Rapid Thermal oxygen method is adopted to grow silicon dioxide insulating layer at silicon dioxide window and N-shaped silicon substrate intersection; Pass into 500sccm nitrogen and 500sccm oxygen, be rapidly heated 900 DEG C, reaction 30s; Then anneal 10min at 500 DEG C;
(5) preparation of graphene film: adopt chemical gaseous phase depositing process to prepare graphene film in Copper Foil substrate;
(6) graphene film is covered at the upper surface of silicon dioxide separator and the madial wall of top electrode opening, the upper surface of top electrode and silicon dioxide insulating layer; Wherein, the transfer method of Graphene is: graphene film surface uniform is applied one deck polymethyl methacrylate film, then puts into etching solution 4h erosion removal Copper Foil, leaves the graphene film supported by polymethyl methacrylate; The upper surface of the madial wall of silicon dioxide separator and top electrode opening, the upper surface of top electrode and silicon dioxide insulating layer is transferred to after the graphene film washed with de-ionized water that polymethyl methacrylate is supported; Finally remove polymethyl methacrylate with acetone and isopropyl alcohol; Wherein, described etching solution is by CuSO
4, HCl and water composition, CuSO
4: HCl:H
2o=10g:50ml:50ml;
(7) bottom N-shaped silicon substrate, apply gallium indium slurry, prepare gallium indium hearth electrode, form ohmic contact with N-shaped silicon substrate.
The present invention has following beneficial effect:
1. incident illumination is mapped to photodetector surfaces of the present invention, is absorbed by Graphene and silicon substrate.Larger reverse biased is added to device two ends, the photo-generated carrier (hole-electron pair) produced is high-speed motion under the inner high electric field action of APD optical diode, impact ionization is passed through in motion process, producing quantity is right tens times of secondaries, three the new hole-electron pairs in initiating electron hole, thus form very large optical signal current, there is very high gain.
2. Graphene and silicon form Schottky shallow junction, and incident light is easily inhaled, and the electron hole of generation is separated by internal electric field very soon, reduce surface recombination, eliminate dead layer.In UV light region, quantum efficiency is very high.
3. Graphene is as transparency electrode, strengthens absorbing incident light, improves photogenerated current, has very high optic response.The carrier mobility of Graphene is very large, can improve the time response of device.
4. silicon dioxide insulating layer forms very high potential barrier to many sons, suppresses the many sons (electronics) in silicon substrate to move to Graphene, greatly reduces dark current, have very high on-off ratio.
5. photodetector material therefor of the present invention take silicon as stock, and preparation process is simple, and cost is low, easily compatible with existing semiconductor standard processes.
Accompanying drawing explanation
Fig. 1 is the structural representation of the avalanche photodetector that the present invention is based on graphene/silicon dioxide/silicon;
Fig. 2 is under the photodetector in the present invention prepared by embodiment is operated in 0 ~-25V, and 405nm, light energy are 1mW/cm
2ultraviolet light light open close with light under the curve chart that changes with reverse biased of the optical response plot of device and internal gain thereof;
Fig. 3 is the pictorial diagram based on Graphene MISSi-APD photodetector array;
In figure, N-shaped silicon substrate 1, silicon dioxide separator 2, silicon dioxide window 3, silicon dioxide insulating layer 4, top electrode 5, graphene film 6, hearth electrode 7, photodetector array 8, signal processing circuit 9.
Embodiment
The operation principle of a kind of avalanche photodetector based on graphene/silicon dioxide/silicon provided by the invention is as follows:
Graphene contacts with N-shaped silicon base and forms schottky junction, and internal electric field points to Graphene by silicon base.When incident illumination is mapped to graphene/silicon interface, Graphene and silicon base absorb incident light and produce electron-hole pair.Under internal electric field effect, hole flows to Graphene and is collected by top electrode, and electron stream is to silicon substrate and collected by hearth electrode, forms photogenerated current.Graphene and silicon form Schottky shallow junction, and the electron hole that incident light produces is separated by internal electric field very soon, reduce surface recombination, eliminate dead layer; Silicon dioxide insulating layer increases schottky barrier height, suppresses the many sons (electronics) in silicon substrate to move to Graphene, greatly reduces dark current.
Below in conjunction with drawings and Examples, the present invention is further illustrated.
As shown in Figure 1, based on the avalanche photodetector of graphene/silicon dioxide/silicon, comprising: N-shaped silicon substrate 1, silicon dioxide separator 2, silicon dioxide window 3, silicon dioxide insulating layer 4, top electrode 5, graphene film 6 and hearth electrode 7; Wherein, the upper surface of described N-shaped silicon substrate 1 covers silicon dioxide separator 2, silicon dioxide separator 2 has silicon dioxide window 3, make silicon dioxide separator 2 concavity structure, top electrode 5 is covered at the upper surface of silicon dioxide separator 2, the border of top electrode 5 is less than the border of silicon dioxide separator 2, covers silicon dioxide insulating layer 4 at silicon dioxide window 3 and N-shaped silicon substrate 1 intersection; Cover graphene film 6 at the upper surface of silicon dioxide separator 2 and the madial wall of top electrode 5 opening, the upper surface of top electrode 5 and silicon dioxide insulating layer 4, the coverage of top electrode 5 upper surface graphene film 6 is less than the border of top electrode 5; At N-shaped silicon substrate 1 lower surface, hearth electrode 7 is set.
Prepare the method for the above-mentioned avalanche photodetector based on graphene/silicon dioxide/silicon, comprise the following steps:
(1) at the upper surface oxidation growth silicon dioxide separator 2 of N-shaped silicon substrate 1, the resistivity of N-shaped silicon substrate 1 used is 1 ~ 10 Ω cm; The thickness of silicon dioxide separator 2 is 300nm ~ 500nm, and growth temperature is 900 ~ 1200 DEG C;
(2) carve top electrode 5 figure in silicon dioxide separator 2 surface light, then adopt electron beam evaporation technique, first growth thickness is about the chromium adhesion layer of 5nm, then grows the gold electrode of 50nm;
(3) there is silicon dioxide separator 2 surface light of top electrode 5 to carve silicon dioxide window 3 figure in growth, then by reactive ion etching technology, adopt C
4f
8plasma etching silicon dioxide separator 2 also uses the silicon dioxide that buffered oxide etch (BOE) solution removal remains; Wherein, described BOE solution is by ammonium fluoride (NH
4f), hydrofluoric acid (HF) and water composition, NH
4f:HF:H
2o=60g:30ml:100ml;
(4) Rapid Thermal oxygen method is adopted to grow silicon dioxide insulating layer 4 at silicon dioxide window 3 and N-shaped silicon substrate 1 intersection; Pass into 500sccm nitrogen and 500sccm oxygen, be rapidly heated 900 DEG C, reaction 30s; Then anneal 10min at 500 DEG C;
(5) preparation of graphene film 6: adopt chemical gaseous phase depositing process (CVD) to prepare graphene film 6 in Copper Foil substrate;
(6) graphene film 6 is covered at the upper surface of silicon dioxide separator 2 and the madial wall of top electrode 5 opening, the upper surface of top electrode 5 and silicon dioxide insulating layer 4; Wherein, the transfer method of Graphene is: graphene film 6 surface uniform is applied one deck polymethyl methacrylate (PMMA) film, then puts into etching solution 4h erosion removal Copper Foil, leaves the graphene film 6 supported by PMMA; By graphene film 6 upper surface transferring to the madial wall of silicon dioxide separator 2 and top electrode 5 opening, the upper surface of top electrode 5 and silicon dioxide insulating layer 4 after washed with de-ionized water that PMMA supports; Finally remove PMMA with acetone and isopropyl alcohol; Wherein, described etching solution is by CuSO
4, HCl and water composition, CuSO
4: HCl:H
2o=10g:50ml:50ml;
(7) bottom N-shaped silicon substrate 1, apply gallium indium slurry, prepare gallium indium hearth electrode 7, form ohmic contact with N-shaped silicon substrate 1.
Reverse biased is added to the above-mentioned avalanche photodetector based on graphene/silicon dioxide/silicon, makes it produce avalanche effect, realize gain.Wherein the positive pole of voltage is connected on the hearth electrode 7 of device, and the negative electrode of voltage is connected on the top electrode 5 of device, as shown in Figure 1.
Under the avalanche photodetector based on graphene/silicon dioxide/silicon prepared by this example is operated in 0 ~-25V, the dark current under unglazed and 405nm UV-irradiation and photoelectric current and internal gain are with reverse biased change curve as shown in Figure 2.Wherein the positive pole of voltage is connected on the hearth electrode 7 of device, and the negative electrode of voltage is connected on the top electrode 5 of device, as shown in Figure 1.As can be seen from Figure 2, prepared device is under no light condition, and dark current is very little; And when wavelength be 405nm, light energy is 1mW/cm
2uV-irradiation time produce obvious photoelectric current.Devices function at-25V time, optic response is 3.8, and internal gain is 11.7, confirm device there is very superior photodetection characteristic.
Photodetector array is widely used, as imaging and monitoring etc.The avalanche photodetector that the present invention is based on graphene/silicon dioxide/silicon can use the standard semi-conductor processes in embodiment to make photodetector array 8 as shown in Figure 3.Pass through terminal conjunction method, with gold thread, the Electrode connection of the top electrode of each element in photodetector array 8 and traditional signal processing circuit 9 is got up, use traditional signal processing circuit 9 can obtain the data of all optical detection devices of photodetector array 8.
Claims (5)
1. based on the avalanche photodetector of graphene/silicon dioxide/silicon, it is characterized in that, comprising: N-shaped silicon substrate (1), silicon dioxide separator (2), silicon dioxide window (3), silicon dioxide insulating layer (4), top electrode (5), graphene film (6) and hearth electrode (7); Wherein, the upper surface of described N-shaped silicon substrate (1) covers silicon dioxide separator (2), silicon dioxide separator (2) has silicon dioxide window (3), make silicon dioxide separator (2) concavity structure, top electrode (5) is covered at the upper surface of silicon dioxide separator (2), the border of top electrode (5) is less than the border of silicon dioxide separator (2), covers silicon dioxide insulating layer (4) at silicon dioxide window (3) and N-shaped silicon substrate (1) intersection; Cover graphene film (6) at the upper surface of silicon dioxide separator (2) and the madial wall of top electrode (5) opening, the upper surface of top electrode (5) and silicon dioxide insulating layer (4), the coverage of top electrode (5) upper surface graphene film (6) is less than the border of top electrode (5); At N-shaped silicon substrate (1) lower surface, hearth electrode (7) is set.
2. the avalanche photodetector based on graphene/silicon dioxide/silicon according to claim 1, is characterized in that, described silicon dioxide insulating layer (4) thickness is 1.5nm ~ 2.5nm.
3. the avalanche photodetector based on graphene/silicon dioxide/silicon according to claim 1, is characterized in that, described top electrode (5) is metal film electrode, and metal material is aluminium, gold or golden evanohm.
4. the avalanche photodetector based on graphene/silicon dioxide/silicon according to claim 1, is characterized in that, described hearth electrode (7) is metal film electrode, and metal material is gallium-indium alloy, titanium alloy or aluminium.
5. preparation is as claimed in claim 1 based on the method for the avalanche photodetector of graphene/silicon dioxide/silicon, it is characterized in that, comprises the following steps:
(1) at upper surface oxidation growth silicon dioxide separator (2) of N-shaped silicon substrate (1), the resistivity of N-shaped silicon substrate (1) used is 1 ~ 10 Ω cm; The thickness of silicon dioxide separator (2) is 300nm ~ 500nm, and growth temperature is 900 ~ 1200 DEG C;
(2) carve top electrode (5) figure in silicon dioxide separator (2) surface light, then adopt electron beam evaporation technique, first growth thickness is about the chromium adhesion layer of 5nm, then grows the gold electrode of 50nm;
(3) silicon dioxide separator (2) surface light of top electrode (5) is had to carve silicon dioxide window (3) figure in growth, then reactive ion etching technology is passed through, adopt octafluorocyclobutane plasma etching silicon dioxide separator (2), and with buffered oxide etch solution removal remain silicon dioxide; Wherein, described buffered oxide etch solution is by NH
4f, HF and water composition, NH
4f:HF:H
2o=60g:30ml:100ml;
(4) Rapid Thermal oxygen method is adopted to grow silicon dioxide insulating layer (4) at silicon dioxide window (3) and N-shaped silicon substrate (1) intersection; Pass into 500sccm nitrogen and 500sccm oxygen, be rapidly heated 900 DEG C, reaction 30s; Then anneal 10min at 500 DEG C;
(5) preparation of graphene film (6): adopt chemical gaseous phase depositing process to prepare graphene film (6) in Copper Foil substrate;
(6) graphene film (6) is covered at the upper surface of silicon dioxide separator (2) and the madial wall of top electrode (5) opening, the upper surface of top electrode (5) and silicon dioxide insulating layer (4); Wherein, the transfer method of Graphene is: graphene film (6) surface uniform is applied one deck polymethyl methacrylate film, then put into etching solution 4h erosion removal Copper Foil, leave the graphene film (6) supported by polymethyl methacrylate; By graphene film (6) upper surface transferring to the madial wall of silicon dioxide separator (2) and top electrode (5) opening, the upper surface of top electrode (5) and silicon dioxide insulating layer (4) after washed with de-ionized water that polymethyl methacrylate supports; Finally remove polymethyl methacrylate with acetone and isopropyl alcohol; Wherein, described etching solution is by CuSO
4, HCl and water composition, CuSO
4: HCl:H
2o=10g:50ml:50ml;
(7) at N-shaped silicon substrate (1) bottom coating gallium indium slurry, prepare gallium indium hearth electrode (7), form ohmic contact with N-shaped silicon substrate (1).
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