CN111211196A - A high-sensitivity and high-linearity detector - Google Patents
A high-sensitivity and high-linearity detector Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
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Abstract
The invention discloses a high-sensitivity high-linearity detector which comprises a contact electrode, a graphene transparent conductive electrode and a p from top to bottom‑Absorption region, multiplication region, n+Ohmic contact region and n+An ohmic contact electrode; p is a radical of‑The doping concentration of the absorption region is 1 × 1016～5×1017cm‑3. According to the invention, the graphene is used as a transparent conductive electrode, the surface is a P-type lightly doped absorption region, the electron hole recombination probability is low, the service life of a photon-generated carrier is long, blue-green light can be directly absorbed on the surface of a device to generate an electron hole pair, the loss before entering the absorption region is avoided, and the improvement of the responsivity of the detector in the blue-green light wave band is facilitated.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, biological detection and optical communication, in particular to a detector which can detect blue-green light and has high sensitivity and high linearity.
Background
Because the traditional wireless communication mode is difficult to realize effective communication underwater, the application of visible light communication in the aspect of underwater communication becomes a hotspot of global research; in visible light communication, because the wavelength of blue-green light is located the transmission window of water, the absorption coefficient of water to blue-green light is little for blue-green light communication can be in the relatively farther distance of transmission under water, and can obtain higher transmission rate. However, because the concentration of organic matters and inorganic matters in seawater is higher, photons inevitably interact with water molecules and other particulate matters in water, absorption and scattering still seriously weaken a transmitted light signal, so that the transmission of light in seawater is easier to attenuate than the transmission in the atmosphere, and the communication distance is influenced; therefore, it is desirable to produce a highly responsive blue-green photodetector.
The conventional PN junction photodiode has low photoelectric conversion efficiency because of no internal gain. The Avalanche Photodiode (APD) amplifies the number of photo-generated free carriers by utilizing an avalanche effect, plays a role of gain, has the functions of detecting optical signals and amplifying electric signals, has higher sensitivity, and can receive extremely weak signal light. Blue-green light belongs to short-wave light, has shallow penetration depth and is mainly absorbed on the near surface of the detector. The surface of a traditional vertical structure detector is generally heavily doped, part of electron-hole pairs are compounded on the surface, the service life of photogenerated carriers is short, the photogenerated carriers are not easy to collect, and the responsivity of the detector to blue-green light is reduced.
Disclosure of Invention
Aiming at the defects existing in the technical problems, the invention provides a near-surface absorption high-sensitivity high-linearity detector which has the advantages of high speed, high sensitivity, high linearity, high integration and the like in order to improve the responsivity of the detector in a blue-green light wave band.
The invention discloses a high-sensitivity high-linearity detector which comprises a contact electrode, a graphene transparent conductive electrode and a p from top to bottom-Absorption region, multiplication region, n+Ohmic contact region and n+An ohmic contact electrode;
said p is-The doping concentration of the absorption region is 1 × 1016～5×1017cm-3。
As a further improvement of the invention, the detector is made of the following materials: si, Ge, SiC, InSb, GaN, Si/Ge, InP/InGaAs or AlGaAs/GaAs material systems.
As a further improvement of the invention, the contact electrode is Al, Au, Ti or an alloy of at least two of Al, Au and Ti.
As a further improvement of the invention, the graphene transparent conductive electrode and the p-The absorption regions are equal in area, p-The thickness of the absorption region is 0.1 to 10 μm.
As a further improvement of the invention, the graphene transparent conductive electrode is CVD copper-based or CVD nickel-based graphene, the graphene transparent conductive electrode is single-layer or multi-layer graphene, and the light transmittance of the graphene transparent conductive electrode is more than 90%.
As a further development of the invention, said p-The doping distribution of the absorption region is uniform doping or gradient doping;
the gradient doping is that the doping concentration decreases in a step shape from top to bottom, the number of the steps is 2-50, and the doping concentration difference of two adjacent steps is larger than 10%.
As a further development of the invention, the multiplication region is deposited to the n by means of epitaxial growth+On the ohmic contact region, the doping concentration of the multiplication region is 1 × 1014～5×1015cm-3And the thickness is less than 1 mu m.
As a further development of the invention, n is+The ohmic contact region has a doping concentration corresponding to that of n+The heavy doping concentration of the ohmic contact electrode for forming ohmic contact is 1 × 1018～9×1019cm-3。
As a further improvement of the invention, the detection wavelength range of the detector is from deep ultraviolet to far infrared.
As a further improvement of the invention, the detector is used for the design of a light receiving device for underwater optical communication and biological detection.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the graphene is used as a transparent conductive electrode, the surface is a P-type lightly doped absorption region, the electron hole recombination probability is low, the service life of a photon-generated carrier is long, blue-green light can be directly absorbed on the surface of a device to generate an electron hole pair, the loss before entering the absorption region is avoided, and the improvement of the responsivity of the detector in the blue-green light wave band is facilitated.
Drawings
FIG. 1 is a schematic three-dimensional structure diagram of a high sensitivity high linearity detector according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a two-dimensional structure of a high sensitivity high linearity detector according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a first step of a method for fabricating a detector according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a second step of the method for fabricating a detector according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a third step of the method for fabricating a detector according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a fourth step of the method for fabricating a detector according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a fifth step of the method for fabricating a detector according to an embodiment of the present invention;
FIG. 8 is a simulation diagram of the electric field distribution of the high linearity high sensitivity detector disclosed in one embodiment of the present invention;
fig. 9 is a simulation diagram of the inverse IV characteristics of the high linearity high sensitivity detector disclosed in one embodiment of the present invention.
In the figure:
101. a contact electrode; 102. a graphene transparent conductive electrode; 103. p is a radical of-An absorption zone; 104. a multiplication region; 105. n is+An ohmic contact region; 106. n is+And ohmic contact with the electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in FIGS. 1 and 2, the invention provides a high-sensitivity high-linearity detector, which comprises a contact electrode 101, a graphene transparent conductive electrode 102, and a p-Absorption region 103, multiplication region 104, n+ Ohmic contact regions 105 and n+ Ohmic contact electrode 106, contact electrode 101, graphene transparent conductive electrode 102, p-Absorption region 103, multiplication region 104, n+ Ohmic contact regions 105 and n+The ohmic contact electrodes 106 are stacked from top to bottom; wherein:
the contact electrode 101 of the present invention is disposed on the graphene transparent conductive electrode 102; the contact electrode is Al, Au, Ti, or an alloy of at least two of Al, Au, and Ti, and the contact electrode 101 only functions to connect the graphene transparent conductive electrode 102, and does not affect the light receiving area.
The graphene transparent conductive electrode 102 of the invention covers p-The area of the graphene transparent conductive electrode 102 is equal to p on the surface of the absorption region 103-The area of the absorption zone 103; the graphene transparent conductive electrode 102 may be CVD copper-based or CVD nickel-based graphene, the graphene transparent conductive electrode may be single-layer or multi-layer graphene, and the light transmittance of the graphene transparent conductive electrode is greater than 90%.
P of the invention-The absorption region 103 is located above the multiplication region 104; p is a radical of-The absorption region 103 has a doping concentration of 1 × 1016～5×1017cm-3The thickness is 0.1 to 10 μm; wherein p is-The doping distribution of the absorption region 103 is uniform doping or gradient doping; the gradient doping is that the doping concentration decreases in a step shape from top to bottom, the number of the steps is 2-50, and the doping concentration difference of two adjacent steps>10％。
The inventive multiplication region 104 is deposited by epitaxial growth to n+The doping concentration of the multiplication region 104 on the ohmic contact region 105 is 1 × 1014～5×1015cm-3And the thickness is less than 1 mu m.
N of the invention+The ohmic contact electrode 106 is coated on n by magnetron sputtering or evaporation coating+The back of the ohmic contact region 105 is prepared; wherein n is+The ohmic contact region 105 is doped with n+The ohmic contact electrode 106 is heavily doped to form ohmic contact, and the heavily doped concentration is 1 × 1018～9×1019cm-3。
The detector of the invention is made of the following materials: the detector is a Si, Ge, SiC, InSb, GaN, Si/Ge, InP/InGaAs or AlGaAs/GaAs material system, the detection wavelength range of the detector is a deep ultraviolet-far infrared band, and the structure of the detector can be used for designing light receiving devices for underwater optical communication and biological detection.
The working principle of the high-sensitivity high-linearity detector provided by the invention is as follows:
low doping concentration of p-The absorption region 103 is close to the graphene transparent conductive electrode 102, and the avalanche region is inside the device. When light is vertically incident from the surface of graphene, photons incident right above the device are transmitted through the graphene transparent conductive electrode 102 and are p-doped-The absorption region 103 absorbs and generates photo-generated electron-hole pairs which can move freely; under the action of an electric field, the photogenerated holes move towards the graphene transparent conductive electrode 102, are directly collected by the graphene transparent conductive electrode 102 and do not enter the multiplication region 104, and the photogenerated electrons reach the multiplication region 104 through drift. When the reverse bias voltage increases to 90% -95% of the avalanche breakdown voltage, avalanche is triggered. Electrons generated by avalanche effect rapidly drift to n on one side under the action of electric field+ Ohmic contact region 105, in turn n+The ohmic contact electrode 106 collects the holes, and the holes drift to the graphene transparent conductive electrode 102 to form an electric signal.
The preparation method of the high-sensitivity high-linearity detector comprises the following steps:
the first step is as follows: selecting heavily doped n-type silicon wafer as substrate, i.e. n+ Ohmic contact region 105 having a doping concentration of 1 × 1019cm-3The thickness is 300-400 μm. Using H2SO4：H2O2Cleaning the surface of the silicon wafer for 30min by using a solution with the ratio of 3:1, then washing the silicon wafer by using deionized water, then ultrasonically cleaning for 1min, drying the silicon wafer by using nitrogen, and then drying the silicon wafer in an oven for 5 min; epitaxially growing a layer with a concentration of 1 × 10 on the surface of a clean silicon wafer14cm-3P-type silicon (near intrinsic) as the multiplication region 104 is 0.4 μm thick, as shown in fig. 3.
The second step is that: then, a layer of lightly doped p is epitaxially grown on the surface of the multiplication region 104-An absorption region 103 doped with 5 × 1016cm-3The thickness was 0.4. mu.m. As shown in fig. 4.
The third step: at n+Preparing a layer of metal with the thickness of 100 nm-500 nm as n of the device on the back surface of the ohmic contact region 105 by magnetron sputtering or evaporation coating and other methods+Ohmic contact to electrode 106, followed by a 30s rapid anneal at 450 deg.C+ Ohmic contact electrodes 106 and n+A good ohmic contact is formed between the ohmic contact regions 105 as shown in fig. 5.
The fourth step: at P-The surface of the absorption region 103 is transferred with a layer of graphene as the transparent conductive electrode 102. The method comprises the steps of growing graphene on a copper substrate by adopting a CVD method, uniformly coating PMMA on the surface of the graphene on the copper substrate in a spin coating mode, and placing on a hot plate at 120 ℃ for drying for 30min to enable the PMMA and the graphene to be tightly combined. Then the film is put in ferric chloride solution to be corroded for about 1.5h to remove the copper substrate, and the graphene film with PMMA is gently rinsed by clear water and transferred to P-And (5) naturally airing the surface of the absorption area 103. Finally, removing PMMA by using acetone, and slightly cleaning the wafer by using N2Blow-drying, as shown in fig. 6.
The fifth step: the electrode pattern is patterned by photolithography, the metal is electron beam evaporated, and a contact electrode 101 is formed by a lift-off process, as shown in fig. 7.
Experiment:
the electric field distribution and the reverse IV characteristics were simulated for the above exemplary probe, and the simulation results are shown in fig. 8 and 9.
As can be seen from the electric field distribution diagram of fig. 8, the high linearity and high sensitivity detector disclosed in this embodiment reaches the critical electric field of avalanche breakdown at about 25V, the avalanche voltage is lower, and the low avalanche breakdown voltage is beneficial to increasing the stability of the device; in addition, the electric field intensity value of the absorption region is enough to enable the drift velocity of the carriers to reach saturation, electrons generated by the absorption region can be quickly drifted to the multiplication region, and the response speed of the detector is improved.
As can be seen from the inverse IV characteristic diagram of fig. 9, the multiplication coefficient of the high-linearity high-sensitivity detector disclosed in this embodiment can reach 300 for visible light with a wavelength of 400nm, which indicates that the high-linearity high-sensitivity detector of the present invention can greatly improve the responsivity of short-wavelength light.
The invention has the advantages that:
according to the invention, the graphene is used as a transparent conductive electrode, the surface is a P-type lightly doped absorption region, the electron hole recombination probability is low, the service life of a photon-generated carrier is long, blue-green light can be directly absorbed on the surface of a device to generate an electron hole pair, the loss before entering the absorption region is avoided, and the improvement of the responsivity of the detector in the blue-green light wave band is facilitated.
The design of the invention aims at all-Si devices, and meanwhile, Ge, SiC, InSb, GaN, Si/Ge, InP/InGaAs or AlGaAs/GaAs material devices can also be suitable.
The design of the invention is suitable for the design of the detector with high speed, high sensitivity, high linearity and high integration.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
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| CN112768535A (en) * | 2021-01-07 | 2021-05-07 | 四川大学 | Graphene/black silicon composite structure photoelectric detector structure |
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