CN111863981A - Gallium oxide solar blind photoelectric detector and preparation method thereof - Google Patents
Gallium oxide solar blind photoelectric detector and preparation method thereof Download PDFInfo
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 105
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 230000031700 light absorption Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 15
- 239000000969 carrier Substances 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 6
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
The invention provides a gallium oxide solar blind photoelectric detector and a preparation method thereof, wherein the preparation method comprises the following steps: a substrate (001); the gallium oxide light absorption layer (002) is of a 3D S-shaped circulating structure; the 3D interdigital electrodes (003) are arranged on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer (002) to form a pair of electrodes of an interdigitated structure which are mutually crossed; the height of the 3D interdigital electrode (003) is not less than that of the gallium oxide light absorption layer (002). The method provided by the invention can enable the electric field distribution to be more uniform, the capability of collecting photon-generated carriers by the electrode is stronger, and meanwhile, the influence of surface defects on carrier transmission is reduced, thereby being beneficial to improving performance parameters such as responsivity, response speed and the like of the device.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a gallium oxide solar blind photoelectric detector and a preparation method thereof.
Background
Photodetectors are a class of optoelectronic devices that convert optical signals into electrical signals. The solar blind waveband refers to ultraviolet light with the wavelength range of 200-280nm, the solar blind photoelectric detector has the outstanding advantage of small background interference, and has wide application prospects in the fields of missile early warning, fire remote sensing, high-voltage electric monitoring, non-line-of-sight secret optical communication and the like. The solar blind photoelectric detector mainly comprises an outer photoelectric effect detector and an inner photoelectric effect detector. The external photoelectric effect detector is manufactured based on the principle that electrons in a material can obtain enough energy after absorbing light with a certain wavelength and are emitted from the inside of the material, and mainly comprises a photomultiplier tube, a photoelectric tube and the like. The defects of high vacuum and high voltage, large volume, fragility and the like limit the application of the external photoelectric effect detector in modern electronic systems. Electrons in semiconductors absorb photons of a certain wavelength and then undergo a transition from the valence band to the conduction band, producing photo-generated electrons and photo-generated holes (collectively referred to as photo-generated carriers), which is referred to as the internal photoelectric effect. The solar blind detector with the internal photoelectric effect does not need vacuum, can be miniaturized, and is a research hotspot at present. The detection mechanism of the photoelectric detector with the internal photoelectric effect mainly comprises two detection mechanisms, if no built-in electric field exists in the device, the conductivity of a semiconductor is increased by photon-generated carriers, and the current passing through the device is increased, which is called as the photoconductive effect. If a built-in electric field exists in the device, the photo-generated electrons and the holes are separated under the push of the built-in electric field and move to two ends of the device respectively to generate photo-generated electromotive force, which is called as photovoltaic effect. When two different types of semiconductors are in contact with each other, a built-in electric field is generated on both sides of the contact surface of the two semiconductors due to band mismatch. The built-in electric field is usually constructed by pn junctions, and a built-in electric field also exists between metal-semiconductor (schottky junctions).
Gallium oxide is an ideal solar blind detection material, and the structures adopted by the solar blind photodetectors based on gallium oxide reported at present can be divided into two types: vertical structures and planar structures. The electrodes in the vertical structure are respectively grown on the upper side and the lower side of the gallium oxide layer, and the electrodes in the planar structure are grown on the same side of the gallium oxide layer. The vertical structure is complicated in preparation process, and the production and manufacturing cost is increased. The preparation of the planar structure is simple, but the electric field generated by the electrode is concentrated on the surface of the gallium oxide, and the electric field distribution in the gallium oxide is almost zero, so that the effective light absorption area of the device exists on the surface of the gallium oxide, and the photocurrent of the device mainly flows in the surface area. However, the semiconductor surface often has a large number of defects caused by dangling bonds, adsorbates, and the like, which results in poor performance of the planar structured light detector.
Disclosure of Invention
Technical problem to be solved
Aiming at the problems, the invention provides a gallium oxide solar blind photoelectric detector and a preparation method thereof, which are used for at least partially solving the technical problems of uneven electric field distribution, poor detection performance and the like of the traditional planar solar blind photoelectric detector.
(II) technical scheme
One aspect of the present invention provides a gallium oxide solar blind photodetector, comprising: a substrate 001; the gallium oxide light absorption layer 002 is of a 3D S-shaped circulating structure; the 3D interdigital electrode 003 is arranged on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer 002 to form a pair of electrodes of an interdigitated structure which are mutually crossed; the height of the 3D interdigital electrode 003 is not lower than that of the gallium oxide light absorption layer 002.
Further, the height of the 3D S-shaped circulating structure of the gallium oxide light absorbing layer 002 was more than 2 nm.
Further, the 3D S-shaped circulation structure has a line width of 0.01-500 μm and a line gap width of 0.01-500 tm.
Further, the material of the substrate 001 is one or more of gallium oxide, sapphire, silicon oxide, glass, and PEN.
Further, the material of the 3D interdigital electrode 003 is one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, and ITO.
Further, the height of the 3D interdigital electrode 003 is 2nm-2 μm.
Further, the height of the 3D interdigital electrode 003 beyond the gallium oxide light absorption layer 002 is 0-500 nm.
The invention also provides a preparation method of the gallium oxide solar blind photodetector, which comprises the following steps: s11, forming a gallium oxide light absorbing layer 002 on the substrate 001; s12, forming a 3D S-shaped circulation structure on the gallium oxide light-absorbing layer 002; and S13, growing electrodes on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer 002 to form a pair of 3D interdigital electrodes 003 which are mutually crossed, wherein the height of the 3D interdigital electrodes 003 is not lower than that of the gallium oxide light absorption layer 002.
Further, the height of the 3D S-shaped circulating structure formed on the gallium oxide light absorbing layer 002 was more than 2 nm.
In another aspect, the present invention provides a method for preparing a gallium oxide solar blind photodetector, comprising: s21, forming a 3D S-shaped cycle morphology on the gallium oxide substrate 001; and S22, growing electrodes 003 on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer 001 to form a pair of 3D interdigital electrodes 003 which are mutually crossed, wherein the height of the 3D interdigital electrodes 003 is not lower than that of the gallium oxide light absorption layer 002.
(III) advantageous effects
According to the gallium oxide solar-blind photodetector and the preparation method thereof provided by the embodiment of the invention, the light absorption layer of the gallium oxide is set to be in the 3D S-shaped circulating structure, and the pair of electrodes with the mutually crossed interdigital structures are formed on the two side walls of the 3D S-shaped circulating structure, so that the electric field distribution in the device is more uniform, the capability of the electrodes for collecting photon-generated carriers is stronger, meanwhile, the influence of surface defects on the carrier transmission is reduced, and the improvement of performance parameters of the device, such as responsivity, response speed and the like, is facilitated.
Drawings
Fig. 1 schematically shows a schematic structural view of a gallium oxide solar blind photodetector according to an embodiment of the present invention;
FIG. 2 schematically illustrates a top view of a 3D S-shaped circulation structure of a gallium oxide solar-blind photodetector according to an embodiment of the present invention;
FIG. 3 schematically illustrates a schematic diagram of a 3D S-shaped cyclic structure of a gallium oxide solar blind photodetector according to an embodiment of the present invention;
FIG. 4 schematically shows a flow chart of a method of fabricating a gallium oxide solar-blind photodetector according to an embodiment of the present invention;
fig. 5 schematically shows a flow chart of a preparation method of a gallium oxide solar blind photodetector with a substrate material of gallium oxide according to an embodiment of the invention.
Fig. 6 schematically shows a graph of photoresponse current versus time curves of a 3D interdigital device and a conventional planar interdigital device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
An embodiment of the present invention provides a gallium oxide solar blind photodetector, see fig. 1, including a substrate 001; the gallium oxide light absorption layer 002 is of a 3D S-shaped circulating structure; the 3D interdigital electrode 003 is arranged on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer 002 to form a pair of electrodes of an interdigitated structure which are mutually crossed; the height of the 3D interdigital electrode 003 is not lower than that of the gallium oxide light absorption layer 002.
Referring to fig. 1, gallium oxide is used as a semiconductor light absorption material of the solar blind photodetector, because gallium oxide has significant advantages in solar blind detection compared with other materials: ga2O3The direct band gap semiconductor has an ultra-wide band gap of 4.9eV, directly corresponds to a solar-blind band, and does not need a filter or doping. The ultra-wide forbidden band width also ensures that Ga2O3Has stronger radiation resistance than other semiconductor materials, and simultaneously, Ga2O3Has higher chemical stability, which enables Ga2O3Can be applied to extreme environments such as high temperature, high irradiation and the like. At present, Ga2O3High quality single crystals have been grown by guided mode growth and controlled n-type doping has been achieved. The cost of the guided mode method is lower compared with other growth methods, which is Ga in the future2O3The practicability of the method lays a foundation.
Referring to fig. 1, the 3D S-shaped circulation structure of the light absorbing layer of gallium oxide enables electrodes to grow on both sidewalls of the 3D S-shaped circulation structure, forming an interdigitated structure that intersects with each other, and the multiple-intersection structure enables an electric field to be more uniformly distributed inside the gallium oxide, and also reduces the influence of semiconductor surface defects on the performance of the photodetector. The electric field is uniformly distributed in the whole device, so that the effective light absorption area of the device is increased, and high-performance solar blind detection with high responsivity and high response speed is realized.
The reason why the height of the 3D interdigital electrode 003 is not less than the height of the gallium oxide light absorption layer 002 is to completely collect photogenerated carriers generated by gallium oxide. Fig. 2 is a top view of a 3D S-shaped circulating structure, and the left and right ends of the 3D S-shaped circulating structure of the gallium oxide light absorption layer are respectively provided with a square block connected with the 3D S shape, so that subsequent probe test or wire bonding can be conveniently used.
On the basis of the above embodiment, the height of the 3D S-shaped circulating structure of the gallium oxide light absorbing layer 002 was more than 2 nm.
The height h of the 3D S-shaped circulating structure is greater than 2nm, as shown in detail in fig. 3, in order to increase the absorption of incident solar blind light.
Based on the above examples, the 3D S-shaped circulation structure has a line width of 0.01-500 μm and a line gap width of 0.01-500 μm.
Here, the line width of the 3D S-shaped cyclic structure refers to the line width w of the gallium oxide light absorption layer forming the S-shaped cyclic structure, and the line gap width is the gap width d of the distance between adjacent lines of the S-shaped cyclic structure, as shown in detail in fig. 2, the line width range and the line gap width range enable the electrode to grow uniformly on the two side walls of the 3D S-shaped cyclic structure, so that the electric field distribution is more uniform.
On the basis of the above embodiment, the material of the substrate 001 is one or more of gallium oxide, sapphire, silicon oxide, glass, and PEN.
The material of the substrate 001 is a common substrate material, and the substrate is not limited to the above 6 materials. The substrate can be a gallium oxide material, and then a 3D S-shaped circulating structure is directly formed on the substrate, the gallium oxide is one of semiconductor materials currently used for inner photoelectric effect solar-blind photodetectors, and the gallium oxide has an ultra-wide bandgap of 4.9eV and high chemical stability, and can be grown by a mode-guiding method to obtain a high-quality single crystal and realize controllable n-type doping. Compared with other materials, the gallium oxide has obvious advantages in application to solar blind detection.
On the basis of the above embodiment, the material of the 3D interdigital electrode 003 is one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, and ITO.
The material of the 3D interdigital electrode 003 is a common electrode material, and similarly to the substrate material, the 3D interdigital electrode is not limited to the above-mentioned electrode material.
On the basis of the above embodiment, the height of the 3D interdigital electrode 003 is 2nm to 2 μm.
The height of the 3D interdigital electrode 003 is flush with or exceeds the upper surface of the 3D S circular structure,
on the basis of the above embodiment, the height of the 3D interdigital electrode 003 beyond the gallium oxide light absorption layer 002 is 0 to 500 nm.
The height of the 3D interdigital electrode 003 is not lower than that of the 3D S circular structure, and the height of the 3D interdigital electrode on the two side walls of the gallium oxide light absorption Layer 002 cannot be too high due to the limitation of electrode growth technology such as Atomic Layer Deposition (ALD).
Fig. 6 schematically shows a graph comparing a photoresponse current-time curve of the 3D interdigital device in the present invention with that of a conventional planar interdigital device, and it can be seen that the 3D interdigital device has a stronger capability of collecting photogenerated carriers and a better response performance.
Another embodiment of the present invention provides a method for preparing a gallium oxide solar blind photodetector, including: s11, forming a gallium oxide light absorbing layer 002 on the substrate 001; s12, forming a 3D S-shaped circulation structure on the gallium oxide light-absorbing layer 002; and S13, growing electrodes on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer 002 to form a pair of 3D interdigital electrodes 003 which are mutually crossed, wherein the height of the 3D interdigital electrodes 003 is not lower than that of the gallium oxide light absorption layer 002.
Referring to fig. 4, similar to the conventional semiconductor process, a substrate is first prepared, and a gallium oxide light-absorbing layer 002 is formed on the substrate 001, in which gallium oxide is grown by Metal-organic chemical vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), and the like, that is, operation S11; forming a 3D S-shaped circulating structure on the gallium oxide light absorption layer 002, specifically coating photoresist on the gallium oxide light absorption layer, performing photoetching, and removing part of gallium oxide by means of Inductively Coupled Plasma (ICP) etching and the like, namely operation S12; growing electrodes on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer 002, specifically, growing the electrodes by ALD, magnetron sputtering or other methods, that is, operation S13, and ending the process.
On the basis of the above embodiment, the height of the 3D S-shaped circulating structure formed on the gallium oxide light absorbing layer 002 was more than 2 nm.
The height h of the 3D S-shaped circulating structure is greater than 2nm, as shown in detail in fig. 3, in order to completely collect the photogenerated carriers generated by the gallium oxide.
Another embodiment of the present invention provides a method for manufacturing a gallium oxide solar-blind photodetector, including: s21, forming a 3D S-shaped cycle morphology on the gallium oxide substrate 001; and S22, growing electrodes 003 on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer 001 to form a pair of 3D interdigital electrodes 003 which are mutually crossed, wherein the height of the 3D interdigital electrodes 003 is not lower than that of the gallium oxide light absorption layer 002.
Referring to fig. 5, in the present method, the substrate material is a gallium oxide material, so that a light absorption layer does not need to be formed separately, and a 3D S-shaped circulation pattern is directly formed on the gallium oxide substrate 001, that is, operation S21; the specific operation procedure in operation S22 is similar to that in operation S13.
In summary, the device structure of the 3D interdigital structure is designed such that the metal electrode is embedded inside the gallium oxide, and when a bias voltage is applied, the electric field is distributed deep inside the gallium oxide, rather than being concentrated on the surface. Photogenerated carriers generated in a region farther from the surface can also be collected, so that the quantum efficiency and responsivity of the device are improved. Meanwhile, most of photo-generated current is conducted in a region far away from the surface, so that the influence of surface defects on the performance of the device is reduced, and the parameters of the device, such as response speed, linear response range and the like, are improved.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A gallium oxide solar-blind photodetector, comprising:
a substrate (001);
the gallium oxide light absorption layer (002) is of a 3D S-shaped circulating structure;
the 3D interdigital electrodes (003) are arranged on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer (002) to form a pair of electrodes of an interdigitated structure which are mutually crossed;
the height of the 3D interdigital electrode (003) is not less than that of the gallium oxide light absorption layer (002).
2. The gallium oxide solar-blind photodetector according to claim 1, characterized in that the height of the 3D S-shaped circulating structure of the gallium oxide light-absorbing layer (002) is greater than 2 nm.
3. The gallium oxide solar-blind photodetector as claimed in claim 1, wherein the 3D S-shaped circulating structure has a line width of 0.01-500 μm and a line gap width of 0.01-500 μm.
4. A gallium oxide solar blind photodetector according to claim 1, characterized in that the material of said substrate (001) is one or more of gallium oxide, sapphire, silicon oxide, glass and PEN.
5. Gallium oxide solar blind photodetector according to claim 1, characterized In that the material of said 3D interdigital electrode (003) is one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN and ITO.
6. Gallium oxide solar-blind photodetector according to claim 5, characterized in that the height of said 3D interdigital electrodes (003) is comprised between 2nm and 2 μm.
7. The gallium oxide solar-blind photodetector according to claim 6, characterized in that the height of the 3D interdigital electrode (003) beyond the gallium oxide light-absorbing layer (002) is 0-500 nm.
8. A preparation method of a gallium oxide solar blind photodetector is characterized by comprising the following steps:
s11, forming a gallium oxide light absorption layer (002) on the substrate (001);
s12, forming a 3D S-shaped circulating structure on the gallium oxide light absorption layer (002);
s13, growing electrodes on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer (002) to form a pair of 3D interdigital electrodes (003) which are mutually crossed, wherein the height of the 3D interdigital electrodes (003) is not lower than that of the gallium oxide light absorption layer (002).
9. The method for preparing a gallium oxide solar-blind photodetector according to claim 8, characterized in that the height of the 3D S-shaped circulating structure formed on the gallium oxide light-absorbing layer (002) is greater than 2 nm.
10. A preparation method of a gallium oxide solar blind photodetector is characterized by comprising the following steps:
s21, forming a 3D S-shaped cycle morphology on the gallium oxide substrate (001);
s22, growing electrodes (003) on two side walls of the 3D S-shaped circulating structure of the gallium oxide light absorption layer (001) to form a pair of 3D interdigital electrodes (003) which are mutually crossed, wherein the height of the 3D interdigital electrodes (003) is not lower than that of the gallium oxide light absorption layer (002).
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| CN202010754648.3A CN111863981A (en) | 2020-07-30 | 2020-07-30 | Gallium oxide solar blind photoelectric detector and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112993085A (en) * | 2021-02-09 | 2021-06-18 | 中国科学院上海光学精密机械研究所 | Gallium oxide X-ray detector and preparation method thereof |
| CN114744059A (en) * | 2022-04-08 | 2022-07-12 | 中国科学院半导体研究所 | Solar blind polarization detector based on gallium oxide single crystal and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150380593A1 (en) * | 2012-11-07 | 2015-12-31 | Rensselaer Polytechnic Institute | Neutron-detecting apparatuses and methods of fabrication |
| CN106784044A (en) * | 2016-12-26 | 2017-05-31 | 哈尔滨工业大学 | A kind of three-dimensional structure diamond ultraviolet detector and preparation method thereof |
| CN109461787A (en) * | 2018-09-29 | 2019-03-12 | 北京工业大学 | The vertical coupled type of grating, which is inserted, refers to photodetector |
| CN208835074U (en) * | 2019-01-17 | 2019-05-07 | 湘潭大学 | A kind of three-dimensional parallel-plate electrode semiconductor detector and detection device |
-
2020
- 2020-07-30 CN CN202010754648.3A patent/CN111863981A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150380593A1 (en) * | 2012-11-07 | 2015-12-31 | Rensselaer Polytechnic Institute | Neutron-detecting apparatuses and methods of fabrication |
| CN106784044A (en) * | 2016-12-26 | 2017-05-31 | 哈尔滨工业大学 | A kind of three-dimensional structure diamond ultraviolet detector and preparation method thereof |
| CN109461787A (en) * | 2018-09-29 | 2019-03-12 | 北京工业大学 | The vertical coupled type of grating, which is inserted, refers to photodetector |
| CN208835074U (en) * | 2019-01-17 | 2019-05-07 | 湘潭大学 | A kind of three-dimensional parallel-plate electrode semiconductor detector and detection device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112993085A (en) * | 2021-02-09 | 2021-06-18 | 中国科学院上海光学精密机械研究所 | Gallium oxide X-ray detector and preparation method thereof |
| CN114744059A (en) * | 2022-04-08 | 2022-07-12 | 中国科学院半导体研究所 | Solar blind polarization detector based on gallium oxide single crystal and preparation method thereof |
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