CN111710734B - Gallium oxide photoelectric detector and preparation method thereof - Google Patents

Gallium oxide photoelectric detector and preparation method thereof Download PDF

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CN111710734B
CN111710734B CN202010571256.3A CN202010571256A CN111710734B CN 111710734 B CN111710734 B CN 111710734B CN 202010571256 A CN202010571256 A CN 202010571256A CN 111710734 B CN111710734 B CN 111710734B
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gallium oxide
oxide layer
upper electrode
lower electrode
groove
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CN111710734A (en
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赵晓龙
谭鹏举
侯小虎
徐光伟
龙世兵
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University of Science and Technology of China USTC
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • H01L31/02—Details
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    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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    • H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
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Abstract

The present disclosure provides a gallium oxide photodetector, comprising: a substrate (100); the lower electrode (200) is arranged on the surface of the substrate (100); the gallium oxide layer (300) is arranged on the surface of the lower electrode (200), and a plurality of grooves are formed in the top surface of the gallium oxide layer (300); and the upper electrode (400) covers the top surface of the gallium oxide layer (300) and the bottom surface and the side surface of the groove. On the other hand, the disclosure also provides a preparation method of the gallium oxide photoelectric detector. The gallium oxide photoelectric detection preparation process is simple, and high responsivity and high response speed are realized at the same time.

Description

Gallium oxide photoelectric detector and preparation method thereof
Technical Field
The disclosure relates to the technical field of photoelectric detection, in particular to a gallium oxide photoelectric detector and a preparation method thereof.
Background
The photoelectric detector is a photoelectronic device which can convert an optical signal into an electric signal so as to realize the detection of light. The solar blind band refers to ultraviolet light with the wavelength range of 200-280 nm. Due to strong absorption of the atmospheric ozone layer, the sunlight cannot reach the earth surface, so that solar blind detection has the outstanding advantage of small background interference, and has wide application prospects in the aspects of space astronomical telescopes, missile early warning, non-line-of-sight secret optical communication, marine fog breaking navigation, power grid monitoring, fire remote sensing, biochemical monitoring and the like. According to the difference of mechanisms, the photoelectric detectors can be divided into two types, namely an external photoelectric effect detector and an internal photoelectric effect detector. The external photoelectric effect detector depends on the external photoelectric effect of electrons escaping from the surface of a material after absorbing photons, and mainly comprises a photomultiplier tube, an image intensifier and the like. Such devices have the disadvantages of generally requiring high vacuum, being bulky, etc., and are also fragile. The internal photoelectric effect detector depends on the internal photoelectric effect of electrons which jump from a valence band to a conduction band after absorbing photons. The internal photoelectric effect can be divided into two types: photoconductive effect and photovoltaic effect. The photoconductive effect refers to the fact that after a material absorbs photons, electronic transition occurs, so that the concentration of free carriers is increased, and the resistivity is reduced. The photovoltaic effect refers to that free carriers generated under illumination are respectively transported to two ends of a device under the action of a built-in electric field of the device, so that the voltage at two ends of the device is reduced. The inner photoelectric effect detector has the outstanding advantages of miniaturization, no need of vacuum and the like. At present, materials for solar blind detection of the internal photoelectric effect mainly comprise Si, GaAs, GaP, GaN, SiC, ZnO, diamond, gallium oxide and the like. Compared with other materials, the gallium oxide has remarkable advantages, is a direct band gap semiconductor, has the forbidden band width as high as 4.9 electron volts, directly corresponds to a solar-blind waveband, and cannot be interfered by light with the wavelength longer than the solar-blind waveband. In addition, the ultra-wide forbidden band width ensures that the gallium oxide has high breakdown field strength, high temperature resistance and good radiation resistance, and has better tolerance to an extreme environment and working conditions. In addition, the gallium oxide can be prepared by a mode-guiding method, controllable n-type doping is realized, and the production cost is lower. Gallium oxide is an ideal solar blind detection material, and the currently reported solar blind photodetectors based on gallium oxide mainly adopt the following structures: photoconductive structures, MSM (metal-semiconductor-metal) structures, schottky structures, and the like. The manufacturing process of the schottky structure is complex, and the manufacturing cost is high.
Although the MSM and the photoconductive structure have simple manufacturing processes, the dark current is large, and the response speed is slow. In addition, it is difficult to achieve both high responsivity and fast response speed in these devices, and an increase in one parameter usually results in a decrease in another parameter, both of which are important for the fabrication of high performance, practical photodetectors. Therefore, there is a need to design a new gallium oxide solar blind photodetector to simplify the fabrication process and achieve high responsivity and fast response speed.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a gallium oxide photodetector and a method for manufacturing the same, which at least solve the above technical problems.
(II) technical scheme
The present disclosure provides a gallium oxide photodetector, comprising: a substrate 100; a lower electrode 200 provided on the surface of the substrate 100; the gallium oxide layer 300 is arranged on the surface of the lower electrode 200, and a plurality of grooves are formed in the top surface of the gallium oxide layer 300; and an upper electrode 400 covering the top surface of the gallium oxide layer 300 and the bottom and side surfaces of the trench.
In a further embodiment, the material of the lower electrode 200 is one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, ITO, or graphene.
In a further embodiment, the thickness of the gallium oxide layer 300 is 10-1000 nm.
In a further embodiment, the cross-sectional shape of the trench is one or more of circular, rectangular, triangular or polygonal.
In a further embodiment, the material of the upper electrode 400 is one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, ITO, or graphene.
In a further embodiment, the thickness of the upper electrode 400 is less than or equal to 30 nm.
Another aspect of the present disclosure provides a method for manufacturing a gallium oxide photodetector, including: s1, depositing the lower electrode 200 on the substrate 100; s2, depositing a gallium oxide layer 300 on the lower electrode 200; s3, photoetching and etching the gallium oxide layer 300 to form a groove; s4, depositing the upper electrode 400 on the top surface of the gallium oxide layer 300 and the surface of the trench.
In a further embodiment, the thickness of the gallium oxide layer 300 is 10-1000 nm.
In a further embodiment, the thickness of the upper electrode 400 is less than or equal to 30 nm.
(III) advantageous effects
The present disclosure provides a gallium oxide photodetector and a method for manufacturing the same, which at least have the following beneficial effects:
the groove structure on the gallium oxide increases the surface roughness of the gallium oxide, reduces the specular reflection of incident light, and enhances the absorption of the gallium oxide on the incident light, thereby improving the quantum efficiency and the responsivity of the device;
the distance between the upper electrode and the lower electrode at the bottom of the trench is short, so that the electric field intensity between the two electrodes is increased, and meanwhile, the moving distance of the current carrier in the gallium oxide is shorter, so that the time required by the migration of the current carrier in the gallium oxide is shortened, the response speed of the device is accelerated, and the responsiveness is improved;
the electric field intensity is enhanced at the place with large curvature, and the electric field intensity between electrodes can be further improved by a large number of sharp corners in the groove structure, so that the responsivity and the response speed are improved;
the upper electrode with the nanometer thickness completely covers gallium oxide, collects photon-generated carriers to the maximum extent, and simultaneously does not have great influence on the light absorption of the gallium oxide.
Drawings
FIG. 1 schematically shows a block diagram of a gallium oxide photodetector according to an embodiment of the present disclosure;
fig. 2 schematically illustrates a process step diagram of a method of fabricating a gallium oxide photodetector according to an embodiment of the present disclosure.
Detailed Description
The groove structure is prepared on the gallium oxide layer, so that the specular reflection of light on the surface of the film can be reduced, and the absorption of gallium oxide on incident light is increased; meanwhile, the distance between the upper electrode and the lower electrode is reduced, so that the movement distance of a current carrier is reduced, and the electric field intensity between the electrodes is increased; the electric field intensity is further enhanced by a large number of sharp corners in the structure, so that the response speed of the device can be improved, and the responsiveness of the device is increased; the metal with nanometer thickness is used as the upper electrode, the light absorption of the gallium oxide is not influenced while the whole gallium oxide surface is uniformly covered, and the device performance is improved.
A gallium oxide photodetector in the present application, as shown in fig. 1, includes a substrate 100, a lower electrode 200, a gallium oxide layer 300, and an upper electrode 400, wherein: a lower electrode 200 provided on the surface of the substrate 100; the gallium oxide layer 300 is arranged on the surface of the lower electrode 200, and a plurality of grooves are formed in the top surface of the gallium oxide layer 300; and an upper electrode 400 covering the top surface of the gallium oxide layer 300 and the bottom and side surfaces of the trench.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
The substrate 100 is an insulating substrate, which may be pretreated by cleaning or polishing before use.
The lower electrode 200 may be deposited on the substrate 100, and the material of the lower electrode 200 is preferably one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, ITO, or graphene.
The gallium oxide layer 300 can be deposited on the surface of the lower electrode 200, and the thickness of the gallium oxide layer 300 is preferably 10-1000 nm. The top surface of the gallium oxide layer 300 is provided with a plurality of grooves, which may be the same or different in shape, and may be of a regular or irregular structure, and the cross-sectional shape thereof may be one or more of circular, rectangular, triangular, polygonal, and the like.
The upper electrode 400 uniformly covers the top surface of the gallium oxide layer 300 and the bottom and side surfaces of the trench. The material of the upper electrode 400 may be one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, ITO, or graphene. The thickness of the upper electrode 400 is preferably less than or equal to 30 nm.
Another aspect of the present disclosure provides a method for manufacturing a gallium oxide photodetector, as shown in fig. 2, including:
s1, depositing the lower electrode 200 on the substrate 100;
the substrate 100 is an insulating substrate. It may be pretreated by washing or polishing before use. The material of the lower electrode 200 is preferably one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, ITO, or graphene.
S2, depositing a gallium oxide layer 300 on the lower electrode 200;
the thickness of the gallium oxide layer 300 is preferably 10 to 1000 nm.
S3, photoetching and etching the gallium oxide layer 300 to form a groove;
the grooves can be the same or different in shape, can be in a regular or irregular structure, and can be in one or more of a circular shape, a circular ring shape, a rectangular shape, a triangular shape, a polygonal shape and the like in cross section. The depth of the trench is less than the thickness of the gallium oxide layer 300.
After the etching step, the etching damage can be repaired by high-temperature annealing, solution soaking and other modes.
S4, depositing the upper electrode 400 on the top surface of the gallium oxide layer 300 and the surface of the trench.
The upper electrode 400 may be deposited by ALD or the like such that the upper electrode 400 uniformly covers the top surface of the gallium oxide layer 300 and the bottom and side surfaces of the trench. The material of the upper electrode 400 may be one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, ITO, or graphene. The thickness of the upper electrode 400 is preferably less than or equal to 30 nm.
In summary, in the gallium oxide photodetector in the present application, the surface roughness is increased due to the trench structure on the gallium oxide, so that the specular reflection of the incident light is reduced, and the absorption of the gallium oxide on the incident light is enhanced, thereby improving the quantum efficiency and the responsivity of the device; the distance between the upper electrode and the lower electrode at the bottom of the trench is short, so that the electric field intensity between the two electrodes is increased, and meanwhile, the moving distance of the current carrier in the gallium oxide is shorter, so that the time required by the migration of the current carrier in the gallium oxide is shortened, the response speed of the device is accelerated, and the responsiveness is improved; the electric field intensity is enhanced at the place with large curvature, and the electric field intensity between electrodes can be further improved by a large number of sharp corners in the groove structure, so that the responsivity and the response speed are improved; the upper electrode with the nanometer thickness completely covers the gallium oxide, so that photon-generated carriers are collected to the maximum extent, and the light absorption of the gallium oxide cannot be greatly influenced.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (7)

1. A gallium oxide photodetector, comprising:
a substrate (100);
the lower electrode (200) is arranged on the surface of the substrate (100);
the gallium oxide layer (300) is arranged on the surface of the lower electrode (200), the thickness of the gallium oxide layer (300) is 10-1000 nm, a plurality of grooves are formed in the top surface of the gallium oxide layer (300), and the grooves are identical or different in shape;
and the upper electrode (400) covers the top surface of the gallium oxide layer (300) and the bottom surface and the side surface of the groove, and the distance between the upper electrode and the lower electrode at the bottom of the groove is short, so that the electric field intensity between the upper electrode and the lower electrode at the bottom of the groove is higher than that between the upper electrode and the lower electrode without the groove above.
2. Gallium oxide photodetector according to claim 1, the material of said lower electrode (200) being one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, a1, Ru, Pd, TiN, Ta, TaN, ITO or graphene.
3. The gallium oxide photodetector of claim 1, wherein the cross-sectional shape of the trench is one or more of circular, rectangular, triangular, or polygonal.
4. The gallium oxide photodetector of claim 1, the material of the upper electrode (400) being one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, a1, Ru, Pd, TiN, Ta, TaN, ITO or graphene.
5. Gallium oxide photodetector according to claim 1 or 4, said upper electrode (400) having a thickness less than or equal to 30 nm.
6. A method for preparing a gallium oxide photodetector comprises the following steps:
s1, depositing a lower electrode (200) on the substrate (100);
s2, depositing a gallium oxide layer (300) on the lower electrode (200), wherein the thickness of the gallium oxide layer (300) is 10-1000 nm;
s3, etching and forming a plurality of grooves on the gallium oxide layer (300), wherein the grooves are the same or different in shape;
s4, depositing an upper electrode (400) on the top surface of the gallium oxide layer (300) and the surface of the groove, wherein the distance between the upper electrode and the lower electrode at the bottom of the groove is short, so that the electric field intensity between the upper electrode and the lower electrode at the bottom of the groove is higher than that between the upper electrode and the lower electrode without the groove above.
7. The method of fabricating a gallium oxide photodetector according to claim 6, the thickness of said upper electrode (400) being less than or equal to 30 nm.
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CN109920875A (en) * 2017-12-12 2019-06-21 中国科学院苏州纳米技术与纳米仿生研究所 Solar blind ultraviolet detector, its production method and application

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