CN101859858A - Transparent conducting electrode based on graphene and manufacture method and applications thereof - Google Patents
Transparent conducting electrode based on graphene and manufacture method and applications thereof Download PDFInfo
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Abstract
The invention discloses a transparent conducting electrode using a graphene film as a GaN-based LED (light-emitting diode) or ultraviolet light detector and a manufacture method and applications thereof. The graphene film is solidified and bonded on the surface of the GaN substrate of the LED or ultraviolet light detector. The transparent graphene conducting film is prepared by adopting a chemical vapor deposition or reduction-oxidation method, and the GaN-based LED or ultraviolet light detector is manufactured by utilizing a micromachining photoetching, etching and metal deposition method; the graphene film is moved to the p-type GaN-based substrate of the LED or ultraviolet light detector to serve as the transparent conducting electrode instead of ITO or Ni/Au. In the invention, the graphene film is used as the transparent conducting electrode, which can realize low-cost and high-brightness luminescent devices and expands the applications of carbon nanometer materials in the field of GaN-based photoelectric devices.
Description
Technical field
The present invention relates to the transparency conductive electrode and the method for making thereof of a kind of GaN base LED, ultraviolet light detector, its recipe comprises the preparation graphene film, graphene film is moved to the transparency conductive electrode of P type GaN substrate, produced by micro processing detector, belongs to the carbon nanotube technology field.
Background technology
2004, the A.K.Geim group of Britain Manchester university obtained breakthrough with the mechanical stripping method on the graphite sample direction of the monatomic bed thickness of preparation.They have reported the field effect electron transport phenomenon in the mono-layer graphite
[3]The P.Kim group of 2005 subsequently Geim groups and Columbia Univ USA is reported in succession and observes the integer quantum hall effect in the mono-layer graphite sample.Particularly at room temperature just can observe the integer quantum hall effect, bigger 10 times than the temperature range of other materials.And the electronic behavior of Graphene is similar to relativistic particle, because the periodic potential of the triangle dot matrix of electronics and Graphene interacts, its quality of Dirac Fermion in the mono-layer graphite sample is almost nil, has quite high mobility.Before making, this discovery can only can in the laboratory, launch in the phenomenon in the high-energy physics experiment of costliness.Graphene (Graphene) is the two-dimentional carbon nano-structured material that is made of the mono-layer graphite sheet, has excellent mechanics, electricity and thermal property.The mobility of Graphene can surpass～10
4Cm
2/ Vs, thermal conductivity (3500-5300W/mK).Thereby carbon nanomaterial is considered to construct one of most promising material of following nanoelectronics circuit with method from bottom to top, and the aspects such as filling components, biochemical sensor that are expected at high speed nanoelectronic in the future, opto-electronic device, functional composite material are applied.
III group-III nitride GaN crystal generally is a hexagonal wurtzite structure.Have wide direct band gap 3.39eV (room temperature), high thermal conductivity (1.3W/cmK), strong atomic bond, chemical stability is good.Good photoelectric characteristic is with a wide range of applications at aspects such as solid-state illumination, high temperature high power device, microwave devices.Being after first generation Ge, Si semi-conducting material, second generation GaAs, InP compound semiconductor materials, with semi-conducting materials such as SiC, diamonds, being described as third generation semi-conducting material, is the forward position of semiconducter research and the focus of optoelectronic applications.Nineteen twenty-eight GaN is synthetic first, and monocrystalline GaN crystal film was successfully prepared in 1969.After the nineties in 20th century, adopt buffering epitaxial loayer technology, people can be on specific substrate the growing GaN epitaxial loayer; And the semi-conductive p type of GaN doping difficulty has also obtained breakthrough.GaN base LED has also obtained development rapidly, and 1991, Nichia company successfully developed the GaN base LED of centre wavelength 430 nanometers.At present, GaN base LED commercialization.Highly sensitive ultraviolet light detector all has important application in military, civilian and scientific research.The ultraviolet detector of III group-III nitride GaN crystal is compared with silicon photoelectric diode, photomultiplier, is to have a lower dark current, wide super temperature, high breakdown field, the solar blind ultraviolet detector that need not to filter done.The GaN ultraviolet detector of p-i-n structure has advantage aspect low-dark current, higher detectivity and the higher responsiveness providing more.
Transparent conducting glass, a key component as photoelectric device extensively is used in the electrode material of flat panel display, tiny display, photo-detector, solar cell.The most frequently used electro-conductive glass is indium oxide tin glass (ito glass) at present.The light transmittance in visible-range is greater than 80% usually for ITO, and general conductivity is in (1-5) * 10
3S/cm.But it is more and more serious to use ito surface to face problem.Because the In among the ITO estimates on earth just will to be exhausted in 10 years that the price of In is Ceng Gaoda in recent years, 000/kg, and electronics manufacturer makes the ITO price become very expensive to the increase in demand of ITO.Except more and more rare and cost an arm and a leg, when ITO exists at bronsted lowry acids and bases bronsted lowry, ions diffusion appears easily, its use works the mischief to manufacturing works' environment and health, and simultaneously, ions diffusion is in the device polymer insulation layer, cause optical property to descend, even electric leakage cause device failure.So the material of searching and replacement ITO performance and the device of making new material become a very urgent demand, and be significant to the exploitation of series of displays of future generation, photoelectric device.
The graphene film of recent findings has been found that and is all embodying the analogous performance with ITO aspect conductivity, light transmission and the evenness.And the Graphene film has good chemical stability and advantage cheaply.The another one advantage is that graphene has high work function, might form ohmic contact with the GaN of p type.In the world, recently, a large amount of preparations of Graphene have also obtained some impressive progresses, and the graphite oxide of electronation can be by the electrostatic interaction stable dispersion in the aqueous solution.Directly also succeed with the Graphene transparent conductive film of synthetic individual layer of CVD method and several layers.These progress provide possibility for the application of aspects such as Graphene LCD, OLED, solar cell and photodetector.
Summary of the invention
Purpose of the present invention aims to provide a kind of transparency conductive electrode and method for making and application based on Graphene, replace ITO or Ni/Au transparency conductive electrode with Graphene as GaN base LED, ultraviolet light detector, solve because the In resource is about to exhausted restriction to photodetector, solar cell, each field development of touch display screen, the application of widening carbon nanomaterial.
Purpose of elder generation of the present invention will be achieved through the following technical solutions:
Transparency conductive electrode based on Graphene is characterized in that: described transparency conductive electrode is a graphene film, and this graphene film solidifies the GaN substrate surface that is incorporated into LED or ultraviolet light detector.Wherein said graphene film is single-layer graphene, 2 layers～50 layers composite graphite alkene or the film that both mix composition, and the gauge of this graphene film is between 10nm～600 μ m.
Another purpose of the present invention will be achieved through the following technical solutions:
Method for making based on the transparency conductive electrode of Graphene is characterized in that comprising step:
The mode of I, employing chemical vapour deposition technique or reduction-oxidation graphite prepares graphene film;
II, adopt a kind of method hot pressing in polymerization or the film vacuum filtration to move to the GaN substrate surface of LED or ultraviolet light detector graphene film, and annealing in process;
III, graphene film and GaN substrate are carried out ultraviolet photolithographic, etching, and electron-beam evaporation forms transparency conductive electrode.
Further, the method for making of aforementioned transparency conductive electrode based on Graphene, wherein adopt the process for preparing graphenes by chemical vapour deposition film among the step I, its preparation condition comprises: the carbon source that adopts is the mist of methyl alcohol, ethanol, acetylene, methane or these gases; The metallic film catalyst that adopts is nickel, iron, copper, cobalt, ruthenium or the platinum that 50nm～1000 μ m are thick; And the chemical vapor deposition growth environment of graphene film is: following 700 ℃～1100 ℃ of normal pressure or negative pressure, or ultraviolet lighting is mapped under the environment.
Further, the method for making of aforementioned transparency conductive electrode based on Graphene, wherein adopt the mode of reduction-oxidation graphite to prepare graphene film among the step I, wherein saidly be used for redox raw material graphite powder and comprise natural graphite powder, crystalline graphite powder, graphous graphite powder and expanded graphite powder; The method of described reduction-oxidation graphite comprises employing hydrazine, NaBH
4, LiAlH
4, vitamin C, hydrogen carry out electronation as reducing agent or carry out the heat reduction under inert gas shielding; or the mode that adopts electronation and heat to combine reduces, and the described graphene film that makes is the dispersion Graphene with hydroxyl or carboxyl.
Further, the method for making of aforementioned transparency conductive electrode based on Graphene, wherein the polymer of graphene film migration usefulness adopts dimethyl silicone polymer or polymethyl methacrylate in the Step II, and perhaps the vacuum filtration film adopts fibre resin film or alundum (Al film.
Further object of the present invention, its technical solution is:
The GaN base photoelectric device, comprise LED and ultraviolet light detector, it is characterized in that: with graphene film as transparency conductive electrode, solidify the substrate surface that is incorporated into detector, the form of described transparency conductive electrode comprises that stereochemical structure refers to electrode or the interdigital electrode of planar structure up and down, and the metal film electrode that the transparency conductive electrode of graphene film links to each other with outer metal lead wire is elected Pd, Pd/Au, Sc, Au, Ti/Au, Ni/Au as.
After the technical solution of the present invention application implementation, its beneficial effect is presented as:
Adopt graphene film to replace ITO or Ni/Au, can realize low cost, high brightness light-emitting devices, enlarged the application of carbon nanomaterial in GaN base photoelectric device field as the transparency conductive electrode of GaN base LED, ultraviolet light detector.
Description of drawings
Fig. 1 is the transparency conductive electrode schematic diagram of graphene film as GaN base LED;
Fig. 2 is the transparency conductive electrode schematic diagram of graphene film as the GaN base ultraviolet light detector;
Fig. 3 a is for adopting chemical gaseous phase depositing process synthesizing graphite alkene film AFM;
Fig. 3 b is for adopting reduction-oxidation graphite method synthesizing graphite alkene film AFM;
Fig. 4 is the optics picture of graphene film;
Fig. 5 a is the optical transmittance of transparent conductive graphene membrane;
Fig. 5 b is the electric conductivity I-V curve chart of transparent conductive graphene membrane.
Embodiment
The present invention is directed to day by day deficient In resource, for seek a kind of with low cost, superior performance for transparency conductive electrode, the purpose of the more simple substitution material of preparation, research has also proposed a kind of transparency conductive electrode based on Graphene, and proposed the method for making and the application of this kind transparency conductive electrode simultaneously.
The present invention adopts the Graphene transparent conductive film of chemical vapour deposition (CVD) or the preparation of reduction-oxidation method, utilizes the method for little processing photoetching, etching and metal deposition to make GaN base LED, ultraviolet light detector.Move graphene film again to the substrate of the p type GaN of the substrate of the p type GaN of LED, ultraviolet light detector, replace ITO or Ni/Au as transparency conductive electrode.GaN base LED, the ultraviolet light detector of making as transparency conductive electrode based on Graphene, this device is carried out the luminescent properties test, have preferable effect, can realize low cost, high brightness light-emitting devices, use significant at the photoelectric device of GaN base.Wherein, the graphite flake layer size is between 10nm～600 μ m.Graphene film can mix the film of forming by individual layer, thin layer (2-50 layer) or their.This GaN base LED can design work adds the white light LEDs of fluorescent material at blue light, ultraviolet light or blue light.
A kind of graphene film replacement ITO or Ni/Au are as the new method of the transparency conductive electrode of GaN base LED, ultraviolet light detector, and the processing step that its purpose is achieved is:
I, can adopt the method for chemical vapour deposition (CVD) or reduction-oxidation graphite to prepare graphene film; II, graphene film are moved to GaN base LED, ultraviolet light detector substrate surface, and annealing in process; III, on graphene film and GaN base, carry out ultraviolet photolithographic and etching; IV, on graphene film photoetching and plated metal lead-in wire electrode.
Wherein, the carbon source that chemical vapour deposition (CVD) is adopted in the step (I) is methyl alcohol, ethanol, acetylene, methane or mist between them, and the metallic film catalyst that the chemical vapour deposition (CVD) of preparation Graphene is adopted can be metals such as the metallic nickel, iron, copper, cobalt, ruthenium, platinum of 50 nanometers-1000 micron thickness.700-1100 degree centigrade of Graphene CVD growth temperature.The growth of Graphene can carried out under atmospheric pressure or the negative pressure usually.The growth of Graphene also can be carried out under UV-irradiation.
Relative, the dispersion Graphene with hydroxyl or carboxyl of reduction-oxidation graphite flake layer described in the step (I) for preparing through chemistry redox by graphite powder.The described graphite powder that is used for chemistry redox comprises natural graphite powder, crystalline graphite powder, graphous graphite powder and expanded graphite powder.The method of reduction Graphene can adopt hydrazine, NaBH
4, LiAlH
4, reducing agent such as vitamin C, also can adopt heat reduction under hydrogen or inert gas shielding.Also the mode that can adopt electronation and heat to combine is reduced.
In the step (II), the migration of graphene film: the migration of the graphene film of chemical vapour deposition (CVD) can be adopted polymer such as PDMS, PMMA; The graphene film preparation of chemistry redox can be adopted at fibre resin film or Al
2O
3Vacuum filtration method on the film.The film of two kinds of methods preparation is moved to and can be adopted the method that hot pressing shifts and the method improvement of annealing to contact GaN on.
Further, this graphene film has variation as the application form of the transparency conductive electrode of photoelectric device.Can be used as the transparency conductive electrode of the GaN base ultraviolet light detector of top-bottom electrode structures form on the one hand, also can be used as the transparency conductive electrode of the GaN base ultraviolet light detector of the interdigital electrode structure form of planar structure on the other hand.No matter take which kind of form, the metal film electrode that links to each other with outer metal lead wire with this Graphene transparency conductive electrode can adopt Pd, Pd/Au, Sc, Au, Ti/Au, Ni/Au.
The invention will be further described below in conjunction with embodiment and accompanying drawing:
Embodiment 1:
Referring to description of drawings Fig. 1, graphene film is made the transparency conductive electrode of GaN base LED.
(1) at Si/SiO
2Deposited by electron beam evaporation, magnetron sputtering or thermal evaporation 100nm-500nm metal Ni film on the substrate; catalyst as chemical vapour deposition (CVD) is put into tube furnace; under hydrogen and argon gas, heat up 850 ℃-1000 ℃; with hydrogen reducing after 20 minutes; feed methane, reaction time 3-5 minute, stop methane; under hydrogen shield, lower the temperature, take out sample.
(2) the GaN epitaxial wafer that contains quantum well that will grow is well placed in the tube furnace N
2Environment keeps 15min for following 750 ℃, activates the P type GaN layer of mixing Mg.
(3) place BOE (H
2SO
4: H
2O
2=3: 1) 70 ℃ of cleaning 3min in the solution, 120 ℃ keep 5min to remove remaining solution on the hot plate.
(4) get Si/SiO
2The Graphene sample of having grown on the substrate, the PMMA of spin coating thickness 100nm-300nm cures 2h thereon.Put into the NaOH aqueous solution of 1mol/L then, heat 80 ℃, come off from silicon chip, take out the nickel film-Graphene-PMMA that comes off, put into the FeCl of 1mol/L up to the nickel film
3The aqueous solution takes out after dissolving the nickel film, is put on the epitaxial wafer of GaN N in the aqueous solution
2Air-blowing is done, and heats 80 ℃ of a few minutes to make Graphene and epitaxial wafer good bond.
(5) at the SiO of plasma reinforced chemical vapour deposition (PECVD) deposition 450nm
2, as inductively coupled plasma (ICP) etch mask.
(6) photoetching for the first time: purpose is to etch into n-GaN, determines area～200 μ m of p-GaN
2-1000 μ m
2Spin coating photoresist (the positive glue of AZ5214), technological parameter: slow-speed of revolution 600rpm/8s, high rotating speed 4000rpm/30s, hot plate goes forward to dry by the fire 95 ℃/90s, adopts the vacuum exposure mode, and the time for exposure is 7.5s, places 40s in the developer solution, removes developer solution in the deionized water, N
2Air-blowing is done.
(7) post bake: place 60s on 110 ℃ of hot plates and make firm bonding of photoresist and wafer.
(8) wet etching SiO
2: sample is placed (40% NH in the buffered etch liquid
4F: 49% HF=6: 1) time is 180s.Be placed on after corrosion finishes and observe the corrosion situation under the metallomicroscope.
(9) H
2SO4: H
2O
2Place 3min in 50 ℃ in (3: 1) solution, remove photoresist.120 ℃ keep 3min to remove remaining solution on the hot plate.Use the step instrument to measure SiO
2Layer corrosion depth checked the corrosion situation.
(10) oxygen plasma etch graphene film.Follow ICP dry etching GaN, Cl
2(80sccm)/CH
4(3sccm)/and He (10sccm), etching 200s, 90 ℃ of ultrasonic cleaning 5min remove the pollution that etching produces in the KOH solution.BOE (H
2SO
4: H
2O
2=3: 1) place 5min in the solution and remove SiO
2
(11) measure etching depth and whether arrive n-GaN, metallomicroscope is observed the etching situation down.
(12) photoetching for the second time: purpose is to deposit the Ohm contact electrode Ti/Al of n-GaN.Adopt photoresist AZ5214 technological parameter: slow-speed of revolution 600rpm/8s, high rotating speed 4000rpm/30s, hot plate goes forward to dry by the fire 95 ℃/90s, adopts the vacuum exposure mode, and the time for exposure is 7.5s, places 40s in the developer solution, removes developer solution in the deionized water, N
2Dry up.
(13) post bake: place 60s on 110 ℃ of hot plates and make firm bonding of photoresist and wafer.
(14) electron-beam evaporation 200nmTi/Al electrode.5min in 60 ℃ of plasma degumming machines, washed with de-ionized water, metallography microscope sem observation.
(15) photoetching for the third time: purpose is to deposit to the Ohm contact electrode of the Graphene that links to each other with p-GaN.Spin coating HMDS, technological parameter is: slow-speed of revolution 600rpm/10s, high rotating speed 6000rpm/15s.Place 90s for 90 ℃ on the hot plate.Spin coating photoresist (the positive glue of AZ5214), technological parameter: slow-speed of revolution 600rpm/8s, high rotating speed 4000rpm/30s, hot plate goes forward to dry by the fire 95 ℃/90s, adopts the vacuum exposure mode, and the time for exposure is 7.5s, places 40s in the developer solution, removes developer solution in the deionized water, N
2Dry up.
(16) post bake: place 60s on 110 ℃ of hot plates and make firm bonding of photoresist and wafer.
(17) electron-beam evaporation Pd/Au (～300nm), the about 40 μ m of area
2
(18) metal-stripping is removed photoresist in the equipment for burning-off photoresist by plasma.
(19) the semiconductor parameter instrument is levied the LED performance in conjunction with light intensity meter, brightness instrument.
Embodiment 2:
Referring to description of drawings Fig. 2, graphene film is made the transparency conductive electrode of GaN base ultraviolet light detector.
(1) at Si/SiO
2Deposited by electron beam evaporation, magnetron sputtering or thermal evaporation 100nm-500nm metal Ni film on the substrate; catalyst as chemical vapour deposition (CVD) is put into tube furnace; under hydrogen and argon gas, heat up 850 ℃-1000 ℃; with hydrogen reducing after 20 minutes; feed methane, reaction time 3-5 minute, stop methane; under hydrogen shield, lower the temperature, take out sample.
(2) the GaN epitaxial wafer of p-i-n is placed in the tube furnace N
2Environment keeps 15min for following 750 ℃, activates the P type GaN layer of mixing Mg.
(3) place BOE (H
2SO
4: H
2O
2=3: 1) 70 ℃ of cleaning 3min in the solution, 120 ℃ keep 5min to remove remaining solution on the hot plate.
(4) get Si/SiO
2The Graphene sample of having grown on the substrate, spin coating thickness 100nm-300nmPMMA cures 2h thereon.Put into the NaOH aqueous solution of 1mol/L then, heat 80 ℃, come off from silicon chip, take out the nickel film-Graphene-PMMA that comes off, put into the FeCl of 1mol/L up to the nickel film
3The aqueous solution takes out after dissolving the nickel film, is put on the epitaxial wafer of GaN N in the aqueous solution
2Air-blowing is done, and heats 80 ℃ of a few minutes to make Graphene and epitaxial wafer good bond.
(5) at plasma reinforced chemical vapour deposition (PECVD) deposition 450nm SiO
2, as inductively coupled plasma (ICP) etch mask.
(6) photoetching for the first time: purpose is to etch into n-GaN, and the area of determining p-GaN is about 200 μ m
2-1000 μ m
2Spin coating photoresist (the positive glue of AZ5214), technological parameter: slow-speed of revolution 600rpm/8s, high rotating speed 4000rpm/30s, hot plate goes forward to dry by the fire 95 ℃/90s, adopts the vacuum exposure mode, and the time for exposure is 7.5s, places 40s in the developer solution, removes developer solution in the deionized water, N
2Air-blowing is done.
(7) post bake: place 60s on 110 ℃ of hot plates and make firm bonding of photoresist and wafer
(8) sample is placed (40% NH in the buffered etch liquid
4F: 49% HF=6: 1), the time is 180s.Be placed on after corrosion finishes and observe the corrosion situation under the metallomicroscope.
(9) BOE (H
2SO
4: H
2O
2=3: 1) place 3min in 50 ℃ in the solution, remove photoresist.120 ℃ keep 3min to remove remaining solution on the hot plate.Use the step instrument to measure SiO
2Layer corrosion depth checked the corrosion situation.
(10) oxygen plasma etch graphene film.Follow ICP dry etching GaN, Cl
2(80sccm)/CH
4(3sccm)/and He (10sccm), etching 200s, 90 ℃ of ultrasonic cleaning 5min remove the pollution that etching produces in the KOH solution.BOE (H
2SO
4: H
2O
2=3: 1) place 5min in the solution and remove SiO
2
(11) measure etching depth and whether arrive n-GaN, metallomicroscope is observed the etching situation down.
(12) photoetching for the second time: purpose is to deposit the Ohm contact electrode Ti/Al of n-GaN.Adopt photoresist AZ5214 technological parameter: slow-speed of revolution 600rpm/8s, high rotating speed 4000rpm/30s, hot plate goes forward to dry by the fire 95 ℃/90s, adopts the vacuum exposure mode, and the time for exposure is 7.5s, places 40s in the developer solution, removes developer solution in the deionized water, N
2Dry up.
(13) post bake: place 60s on 110 ℃ of hot plates and make firm bonding of photoresist and wafer.
(14) electron-beam evaporation 200nm Ti/Al electrode.5min in 60 ℃ of plasma degumming machines, washed with de-ionized water, metallography microscope sem observation.
(15) photoetching for the third time: purpose is to deposit to the Ohm contact electrode of the Graphene that links to each other with p-GaN.Spin coating HMDS, technological parameter is: slow-speed of revolution 600rpm/10s, place 90s. spin coating photoresist (the positive glue of AZ5214), technological parameter: slow-speed of revolution 600rpm/8s, high rotating speed 4000rpm/30s for 90 ℃ on the high rotating speed 6000rpm/15s. hot plate, hot plate goes forward to dry by the fire 95 ℃/90s, adopt the vacuum exposure mode, the time for exposure is 7.5s, places 40s in the developer solution, remove developer solution in the deionized water, N
2Dry up.
(16) post bake: place 60s on 110 ℃ of hot plates and make firm bonding of photoresist and wafer.
(17) electron-beam evaporation Pd/Au (～300nm), the about 40 μ m of area
2
(18) metal-stripping is removed photoresist in the equipment for burning-off photoresist by plasma.
(19) the semiconductor parameter instrument characterizes the ultraviolet light detector performance in conjunction with ultraviolet source.
Shown in Fig. 3 a and Fig. 3 b, for the atomic force microscope picture of the Graphene of chemical vapor deposition growth, can judge that with atomic force microscope figure synthetic Graphene is thin layer (a 1-20 layer), the graphene film surface has the fold pattern.
The optics picture of graphene film as shown in Figure 4, migration back Graphene sample.
As can be known, the graphene film that obtains is about 75% at the light transmittance of wavelength 400nm～1100nm scope shown in Fig. 5 a, and the four-point method that utilizes shown in Fig. 5 b is measured current-voltage (I-V) curve of graphene film, is R by calculating square resistance
Sh≈ 1k Ω/sq.
Claims (10)
1. based on the transparency conductive electrode of Graphene, it is characterized in that: described transparency conductive electrode is a graphene film, and this graphene film solidifies the GaN substrate surface that is incorporated into LED or ultraviolet light detector.
2. the transparency conductive electrode based on Graphene according to claim 1, it is characterized in that: described graphene film is single-layer graphene, 2 layers～50 layers composite graphite alkene or the film that both mix composition, and the gauge of this graphene film is between 10nm～600 μ m.
3. the method for making of the described transparency conductive electrode based on Graphene of claim 1 is characterized in that comprising step:
The mode of I, employing chemical vapour deposition technique or reduction-oxidation graphite prepares graphene film;
II, adopt a kind of method hot pressing in polymerization or the film vacuum filtration to move to the GaN substrate surface of LED or ultraviolet light detector graphene film, and annealing in process;
III, graphene film and GaN substrate are carried out ultraviolet photolithographic, etching, and electron-beam evaporation forms transparency conductive electrode.
4. the method for making of the transparency conductive electrode based on Graphene according to claim 3, it is characterized in that: adopt the process for preparing graphenes by chemical vapour deposition film among the step I, its preparation condition comprises: the carbon source that adopts is the mist of methyl alcohol, ethanol, acetylene, methane or these gases; The metallic film catalyst that adopts is nickel, iron, copper, cobalt, ruthenium or the platinum that 50nm～1000 μ m are thick; And the chemical vapor deposition growth environment of graphene film is: following 700 ℃～1100 ℃ of normal pressure or negative pressure.
5. the method for making of the transparency conductive electrode based on Graphene according to claim 4 is characterized in that: adopt the process for preparing graphenes by chemical vapour deposition film among the step I, described Graphene grows under the environment of UV-irradiation.
6. the method for making of the transparency conductive electrode based on Graphene according to claim 3, it is characterized in that: adopt the mode of reduction-oxidation graphite to prepare graphene film among the step I, wherein saidly be used for redox raw material graphite powder and comprise natural graphite powder, crystalline graphite powder, graphous graphite powder and expanded graphite powder; The method of described reduction-oxidation graphite comprises employing hydrazine, NaBH
4, LiAlH
4, vitamin C, hydrogen carry out electronation as reducing agent or carry out the heat reduction under inert gas shielding; or the mode that adopts electronation and heat to combine reduces, and the described graphene film that makes is the dispersion Graphene with hydroxyl or carboxyl.
7. the method for making of the transparency conductive electrode based on Graphene according to claim 3 is characterized in that: the polymer of graphene film migration usefulness adopts dimethyl silicone polymer or polymethyl methacrylate in the Step II.
8. the method for making of the transparency conductive electrode based on Graphene according to claim 3 is characterized in that: the vacuum filtration film of graphene film migration usefulness adopts fibre resin film or alundum (Al film in the Step II.
9.GaN base photoelectric device, comprise LED and ultraviolet light detector, it is characterized in that: as transparency conductive electrode, solidify the substrate surface that is incorporated into detector with graphene film, the form of described transparency conductive electrode comprises that stereochemical structure refers to electrode or the interdigital electrode of planar structure up and down.
10. GaN base photoelectric device according to claim 9 is characterized in that: the metal film electrode that the transparency conductive electrode of described graphene film links to each other with outer metal lead wire is elected Pd, Pd/Au, Sc, Au, Ti/Au, Ni/Au as.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320682A (en) * | 2008-06-13 | 2008-12-10 | 华中科技大学 | Method for improving ohm contact performance of metal-P type semiconductor |
| CN101462717A (en) * | 2007-12-17 | 2009-06-24 | 三星电子株式会社 | Single crystalline graphene sheet and process of preparing the same |
| CN101679788A (en) * | 2007-04-20 | 2010-03-24 | 马普科技促进协会 | Highly conductive, transparent carbon films as electrode materials |
-
2010
- 2010-05-07 CN CN2010101655996A patent/CN101859858B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101679788A (en) * | 2007-04-20 | 2010-03-24 | 马普科技促进协会 | Highly conductive, transparent carbon films as electrode materials |
| CN101462717A (en) * | 2007-12-17 | 2009-06-24 | 三星电子株式会社 | Single crystalline graphene sheet and process of preparing the same |
| CN101320682A (en) * | 2008-06-13 | 2008-12-10 | 华中科技大学 | Method for improving ohm contact performance of metal-P type semiconductor |
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