CN105932105A - Construction method of intelligent thin film photodetector capable of identifying detection wavelength - Google Patents
Construction method of intelligent thin film photodetector capable of identifying detection wavelength Download PDFInfo
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- CN105932105A CN105932105A CN201610356859.5A CN201610356859A CN105932105A CN 105932105 A CN105932105 A CN 105932105A CN 201610356859 A CN201610356859 A CN 201610356859A CN 105932105 A CN105932105 A CN 105932105A
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- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000001514 detection method Methods 0.000 title claims abstract description 15
- 238000010276 construction Methods 0.000 title claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 35
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 17
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 9
- 239000011889 copper foil Substances 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 238000007740 vapor deposition Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000010025 steaming Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000009987 spinning Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a construction method of an intelligent thin film photodetector capable of identifying the detection wavelength. The method comprises the following steps: (1) firstly, evaporating CdS on an SiO2/Si substrate and then evaporating ZnS on a CdS thin film; (2) growing graphene on copper foil, coating a copper sheet surface on which the graphene grows with PMMA in a spinning manner, baking the product, putting the product into an FeCl3 solution for etching, after the copper foil is etched, putting a PMMA/graphene thin film into diluted hydrochloric acid and water for cleaning residual FeCl3 etching liquid on the surface respectively, fishing up the PMMA/graphene thin film by an SiO2/Si substrate coated with the CdS/ZnS thin film, airing the PMMA/graphene thin film and then removing the PMMA by a low-pressure vacuum annealing method; and (3) obtaining a graphene/ZnS/CdS heterojunction thin film on the SiO2/Si substrate, and depositing 10nm Cr/100nm of Au by an electron beam vapor deposition method to manufacture an electrode of a device through a mask plate. Semiconductors with different band gaps are compounded, so that ultraviolet light and visible light can be distinguished through a characteristic parameter of response time; and the construction method is simple in process and low in cost and has relatively good practical value.
Description
Technical field
The invention belongs to optical detection field, be specifically related to a kind of smart membranes photo-detector that can identify detection wavelength
Construction method.
Background technology
Due to the application at aspects such as communication, sensing, environmental monitoring, imagings, photo-detector was widely studied in recent years.When
After light-sensitive material is excited more than the light of its band-gap energy, light-sensitive material produces hole-electron pair, by its external circuit
Electric current can increase, and this signal is used as optical detection.This illustrates that the wave-length coverage of the detected light of light-sensitive material is by it
Energy gap determines.Therefore, ultraviolet light detector, it is seen that photo-detector, infrared detector and other photo-detectors all need
Select the light-sensitive material of corresponding band gap.Such as ZnS can be used to construct ultraviolet light detector, and CdS can be used to construct can
See that photo-detector, PbS can be used to construct infrared detector.In other words, for a light-sensitive material having fixing band gap,
All energy can be detected by light-sensitive material more than the light of band gap.Thus cause us can not come according to the signal detected
Identify detected light wave-length coverage.The visible-light detector such as constructed with CdS, when visible ray or ultraviolet light are radiated at light
Time on detector, CdS can produce photo-generated carrier, so the just ultraviolet or visible ray detected cannot be differentiated.
Photoelectric current and response time are two characteristic parameters of photo-detector.Photoelectric current is determined by light intensity to a great extent
Fixed.When light intensity is fixed, photoelectric current size is relevant with the wavelength of detected light.But, when carrying out optical detection under true environment,
We do not know the intensity of detected light, and therefore we can not distinguish the wavelength of detected light according to the photoelectric current obtained.Separately
Outward, there is presently no experiment and show that the response time of photo-detector is relevant with the wavelength of detected light.So, what reality was applied can
See photo-detector to need ultraviolet light to filter out, be just avoided that the interference of ultraviolet light, thus realize the detection to visible ray.
Summary of the invention
It is desirable to provide the construction method of a kind of smart membranes photo-detector that can identify detection wavelength, the present invention
Use different band gap semiconductor ZnS, CdS compound, ultraviolet light and visible can be differentiated by this characteristic parameter of response time
Light.
The present invention adopts the following technical scheme that:
The construction method of a kind of smart membranes photo-detector that can identify detection wavelength, comprises the following steps:
(1) preparation of ZnS/CdS thin film: first at SiO2Electron-beam vapor deposition method evaporation 20-40 nm thickness is utilized in/Si substrate
CdS, is then deposited with the ZnS of 30-120 nm thickness in CdS film；
(2) graphene growth and transfer: grow Graphene on Copper Foil by CVD method, has the copper sheet of Graphene in growth
Spin coating concentration in surface is the PMMA of 80-110 mg/ml, is placed on warm table 160-180 DEG C baking 4-6min after spin coating is complete,
It is then placed in the FeCl that concentration is 1.0-2.0 mol/L3Solution etches, after Copper Foil has etched, by thin for PMMA/ Graphene
Film is respectively placed in the FeCl cleaning its remained on surface in dilute hydrochloric acid and water3Etching liquid, then with being coated with the SiO of CdS/ZnS thin film2/
Si substrate picks up PMMA/ graphene film, treats that it dries, and removes PMMA by the method for low-voltage vacuum annealing；
(3) the constructing of photo-detector: at SiO2After obtaining Graphene/ZnS/CdS hetero-junction thin-film in/Si substrate, pass through mask
Plate, utilizes electron beam steaming degree method to deposit 10 nm Cr/100 nm Au and carrys out the electrode of making devices.
Low-voltage vacuum annealing conditions described in step (2) is: anneal at 380-420 DEG C 1-3h, holds in annealing process
Continue and be passed through 15-25sccm argon.
Beneficial effects of the present invention:
(1) in smart membranes photo-detector of the present invention, Graphene has the carrier mobility of superelevation, swashs at light for light-sensitive material
After sending out, produced carrier provides quick transport channel, thus obtains high performance photo-detector；
(2) smart membranes photo-detector of the present invention uses different band gap semiconductor ZnS, CdS compound, can pass through response time
This characteristic parameter differentiates ultraviolet light and visible ray；
(3) smart membranes photo-detector preparation technology of the present invention is simple, with low cost, has preferable practical value.
Detailed description of the invention
The construction method of a kind of smart membranes photo-detector that can identify detection wavelength, comprises the following steps:
(1) preparation of ZnS/CdS thin film: first at SiO2Electron-beam vapor deposition method is utilized to be deposited with 30 nm thickness in/Si substrate
CdS, is then deposited with the different ZnS of 30 nm, 60 nm, 90 nm and 120 nm in CdS film；
(2) graphene growth and transfer: grow Graphene on Copper Foil by CVD method, has the copper sheet of Graphene in growth
Spin coating concentration in surface is the PMMA of 80-110 mg/ml, is placed on warm table and toasts 5min with 170 DEG C, then put after spin coating is complete
Enter the FeCl that concentration is 1.0-2.0 mol/L3Solution etches, after Copper Foil has etched, by PMMA/ graphene film respectively
It is positioned over the FeCl cleaning its remained on surface in dilute hydrochloric acid and water3Etching liquid, then with being coated with the SiO of CdS/ZnS thin film2/ Si substrate
Picking up PMMA/ graphene film, treat that it dries, remove PMMA by the method for low-voltage vacuum annealing, annealing conditions is: at 400 DEG C
Lower annealing 2h, is continually fed into 20sccm argon in annealing process；
(3) the constructing of photo-detector: at SiO2After obtaining Graphene/ZnS/CdS hetero-junction thin-film in/Si substrate, pass through mask
Plate, utilizes electron beam steaming degree method to deposit 10 nm Cr/100 nm Au and carrys out the electrode of making devices.
Response time required for the optical detection of different-waveband is had bright by the intelligent optical detector that above-described embodiment is constructed
Aobvious difference, can distinguish the wavelength of detected light according to the difference of response time.Band gap is that the CdS of 2.4 eV is used to visit
Surveying visible ray, band gap is that the ZnS of 3.7 eV is used to detect ultraviolet light.When constructing intelligent optical detector, Graphene is placed in
The superiors, are placed in the bottom by CdS, are placed in by ZnS in the middle of Graphene and CdS.When radiation of visible light photo-detector, it is in
ZnS thin film in the middle of CdS film and Graphene can slow down photo-generated carrier and transfer to the speed of Graphene from CdS film.From
And, compare the photo-detector of Graphene/CdS, the response time of visible ray is lengthened out by Graphene/ZnS/CdS detector.Work as purple
When outer light irradiates detector, response time is determined by Graphene/ZnS, this response time and Graphene/CdS detector phase
When.So, the response time of visible ray comparison ultraviolet to be grown by Graphene/ZnS/CdS detector, such that it is able to according to when responding
Between this characteristic parameter differentiate the just ultraviolet or visible ray detected.Graphene/30 constructed by above-described embodiment
Nm ZnS/30 nm CdS photo-detector is respectively 50 ms and 110 ms to Uv and visible light response time, it is seen that optical detection
Device has obvious difference to the response time of ultraviolet light and visible ray.Additionally, above-described embodiment is also by the thickness controlling ZnS thin film
Degree changes the photo-detector response time to visible ray.When the thickness of ZnS film is 60 nm, during 90 nm and 120 nm, ultraviolet
The response time of light is held at 50 ms, but the response time of visible ray extends to 270 ms, 680 ms and 690 respectively
ms。
Claims (2)
1. the construction method of the smart membranes photo-detector that can identify detection wavelength, it is characterised in that include following step
Rapid:
(1) preparation of ZnS/CdS thin film: first at SiO2Electron-beam vapor deposition method evaporation 20-40 nm thickness is utilized in/Si substrate
CdS, is then deposited with the ZnS of 30-120 nm thickness in CdS film；
(2) graphene growth and transfer: grow Graphene on Copper Foil by CVD method, has the copper sheet of Graphene in growth
Spin coating concentration in surface is the PMMA of 80-110 mg/ml, is placed on warm table 160-180 DEG C baking 4-6min after spin coating is complete,
It is then placed in the FeCl that concentration is 1.0-2.0 mol/L3Solution etches, after Copper Foil has etched, by thin for PMMA/ Graphene
Film is respectively placed in the FeCl cleaning its remained on surface in dilute hydrochloric acid and water3Etching liquid, then with being coated with the SiO of CdS/ZnS thin film2/
Si substrate picks up PMMA/ graphene film, treats that it dries, and removes PMMA by the method for low-voltage vacuum annealing；
(3) the constructing of photo-detector: at SiO2After obtaining Graphene/ZnS/CdS hetero-junction thin-film in/Si substrate, pass through mask
Plate, utilizes electron beam steaming degree method to deposit 10 nm Cr/100 nm Au and carrys out the electrode of making devices.
The construction method of a kind of smart membranes photo-detector that can identify detection wavelength the most according to claim 1, its
Being characterised by, the low-voltage vacuum annealing conditions described in step (2) is: anneal at 380-420 DEG C 1-3h, holds in annealing process
Continue and be passed through 15-25sccm argon.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784141A (en) * | 2016-12-16 | 2017-05-31 | 合肥工业大学 | A kind of construction method of short channel semiconductor/Graphene heterojunction optical detector |
| CN108303122A (en) * | 2017-01-11 | 2018-07-20 | 中国科学院上海微系统与信息技术研究所 | The bionical optical detector of graphene and preparation method thereof based on thermoregulation energy |
| CN109003889A (en) * | 2018-07-30 | 2018-12-14 | 合肥工业大学 | The preparation method of II-VI group semiconductive thin film in a kind of flexible substrates |
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| CN104157721A (en) * | 2014-08-08 | 2014-11-19 | 浙江大学 | Graphene/silicon/graphene-based avalanche photodetector and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784141A (en) * | 2016-12-16 | 2017-05-31 | 合肥工业大学 | A kind of construction method of short channel semiconductor/Graphene heterojunction optical detector |
| CN108303122A (en) * | 2017-01-11 | 2018-07-20 | 中国科学院上海微系统与信息技术研究所 | The bionical optical detector of graphene and preparation method thereof based on thermoregulation energy |
| CN109003889A (en) * | 2018-07-30 | 2018-12-14 | 合肥工业大学 | The preparation method of II-VI group semiconductive thin film in a kind of flexible substrates |
| CN109003889B (en) * | 2018-07-30 | 2021-09-17 | 合肥工业大学 | Preparation method of II-VI semiconductor film on flexible substrate |
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Application publication date: 20160907 |