CN105932122B - A kind of LED and its manufacturing method - Google Patents
A kind of LED and its manufacturing method Download PDFInfo
- Publication number
- CN105932122B CN105932122B CN201610426653.5A CN201610426653A CN105932122B CN 105932122 B CN105932122 B CN 105932122B CN 201610426653 A CN201610426653 A CN 201610426653A CN 105932122 B CN105932122 B CN 105932122B
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- Prior art keywords
- led
- transparency conducting
- polymer composite
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- conducting layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
Abstract
The present invention discloses a kind of LED, on substrate grown epitaxial layer, and the transparency conducting layer of variable resistance rate is made on epitaxial layer, makes P electrode over transparent conductive layer, and N electrode is made on epitaxial layer；Transparency conducting layer is made of conductive polymer composite, and conductive polymer composite is 1 by volume by macromolecule matrix material and conductive filler:0.01‑1:1 composition, macromolecule matrix material is epoxy resin, one kind in silica resin, polyethylene, vinylidene fluoride, and conductive filler is one or more of carbon black, graphene, carbon nanotube, metallic particles, metallic fiber, metal oxide particle.Invention additionally discloses the LED manufacturing methods.The present invention can solve the problems, such as that LED chip driving current corresponding under constant voltage drive pattern is drastically increased with the rising of temperature.
Description
Technical field
The present invention relates to LED technology fields, refer in particular to a kind of LED and its manufacturing method.
Background technology
In the prior art, the drive mode of LED has constant pressure driving and constant current to drive two kinds：Wherein, constant voltage drive pattern
Drawback is：As shown in Figure 1, when the junction temperature of LED rises to T2 from T1, since the energy gap of semiconductor can be with temperature
Rise and become smaller, therefore the cut-in voltage of LED can also become smaller accordingly, i.e., I-V curve shown in FIG. 1 can be to left.If LED
Driving voltage remain V, then when the junction temperature of LED rises to T2 from T1, corresponding to driving current will rise from I1
To I2, drastically increase, make with the rising of temperature so as to cause LED chip driving current corresponding under constant voltage drive pattern
Phenomena such as even being burnt into LED luminance unevenness.
In view of this, the present invention develops a kind of LED and its manufacturing method for overcoming constant voltage drive pattern defect, this case by
This is generated.
Invention content
The purpose of the present invention is to provide a kind of LED and its manufacturing method, to solve LED chip under constant voltage drive pattern
The problem of corresponding driving current is drastically increased with the rising of temperature.
To reach above-mentioned purpose, solution of the invention is：
A kind of LED, on substrate grown epitaxial layer make the transparency conducting layer of variable resistance rate, saturating on epitaxial layer
P electrode is made on bright conductive layer, and N electrode is made on epitaxial layer；Transparency conducting layer is made of conductive polymer composite,
Conductive polymer composite is 1 by volume by macromolecule matrix material and conductive filler:0.01-1:1 composition, it is polymer-based
Body material is epoxy resin, one kind in silica resin, polyethylene, vinylidene fluoride, and conductive filler is carbon black, graphene, carbon
One or more of nanotube, metallic particles, metallic fiber, metal oxide particle.
Further, the volume ratio of macromolecule matrix material and conductive filler is 1:0.1-1:0.5.
Further, the thickness of transparency conducting layer is 1-5000.
Further, the thickness of transparency conducting layer is 50-3000.
A kind of LED manufacturing methods, include the following steps：
One, grown epitaxial layer on substrate；
Two, through photoetching and etching, table top is made on epitaxial layer；
Three, conductive polymer composite is uniformly coated on epitaxial layer, conductive polymer composite is by macromolecule
Basis material and conductive filler are 1 by volume:0.01-1:1 is formed, and macromolecule matrix material is epoxy resin, silica tree
One kind in fat, polyethylene, vinylidene fluoride, conductive filler is carbon black, graphene, carbon nanotube, metallic particles, metal are fine
One or more of dimension, metal oxide particle；
Four, cure conductive polymer composite epitaxial wafer heating；
Five, the conductive polymer composite after curing through photoetching and etching, forms the electrically conducting transparent of variable resistance rate
Layer；
Six, make electrode through photoetching, vapor deposition, alloy process；
Seven, to substrate grinding and polishing, then epitaxial wafer is cut into independent LED device.
Further, in step 3, conductive polymer composite is uniformly coated on by the method for spin coating or spraying
On epitaxial layer.
Further, in step 4, epitaxial wafer is positioned in baking oven or heating makes conducting polymer composite wood on hot plate
Material curing.
Further, the volume ratio of macromolecule matrix material and conductive filler is 1:0.1-1:0.5.
Further, the thickness of transparency conducting layer is 1-5000.
Further, the thickness of transparency conducting layer is 50-3000.
After using the above scheme, the present invention has the transparency conducting layer of variable resistance rate, and the transparency conducting layer is by conductive high
Molecular composite material is formed, and resistivity is increased with the rising of temperature.The change in resistance of the transparency conducting layer can be LED
Chip increases additional series resistance, so as to enable the LED chip to work under constant voltage drive pattern when junction temperature rises still
So keep stable driving current.
Description of the drawings
Fig. 1 is the I-V curve figure of prior art LED constant voltage drive patterns；
Fig. 2 is the structure diagram of the present invention；
The LED resistivity that Fig. 3 is the present invention varies with temperature curve graph；
Fig. 4 is the I-V curve figure of the present invention.
Label declaration
1 epitaxial layer 2 of substrate
3 P electrode 41 of transparency conducting layer
N electrode 42.
Specific embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
Refering to shown in Fig. 2 to Fig. 4, a kind of LED that the present invention discloses, grown epitaxial layer 2 on substrate 1, on epitaxial layer 2
The transparency conducting layer 3 of variable resistance rate is made, P electrode 41 is made on transparency conducting layer 3, and N electrode is made on epitaxial layer 2
42。
Transparency conducting layer 3 is made of conductive polymer composite, and conductive polymer composite is by macromolecule matrix material
Material and conductive filler are 1 by volume:0.01-1:1 composition, the preferably volume ratio of macromolecule matrix material and conductive filler are
1:0.1-1:0.5.The thickness of transparency conducting layer 3 is 1-5000, and preferably the thickness of transparency conducting layer 3 is 50-3000.
Macromolecule matrix material is epoxy resin, one kind in silica resin, polyethylene, vinylidene fluoride, conductive filler
For one or more of carbon black, graphene, carbon nanotube, metallic particles, metallic fiber, metal oxide particle.
As shown in figure 3, since the coefficient of thermal expansion of conductive filler is far smaller than the coefficient of thermal expansion of macromolecule matrix material,
With the raising of temperature, with temperature thermal expansion occurs for the volume of macromolecule matrix, and the thermal expansion of conductive filler almost can be with
It ignores, declines in the volume fraction that macroscopically will appear as conductive filler, conductive filler quilt " dilution " is equivalent to, so as to lead
The resistivity of the composite material is caused drastically to increase, generates strong positive temperature coefficient（PTC）Effect, Tc are the Curie of the material
Temperature.By selecting different macromolecule matrix materials and conductive filler and changing macromolecule matrix material and conductive filler
Volume ratio, the Curie temperature of the transparency conducting layer 3 of the variable resistance rate can be made to fall in the operating temperature range of LED.
Further, the Curie temperature of the transparency conducting layer 3 of the variable resistance rate is fallen within the temperature range of 20-200 DEG C.
As shown in figure 4, the I-V curve with variable resistance rate transparency conducting layer LED.When the junction temperature of LED is T1,
Its driving voltage and driving current are respectively V and I.When the junction temperature of LED rises to T2 by T1, due to the energy gap of semiconductor
It can become smaller with the rising of temperature, therefore the cut-in voltage of LED can also become smaller accordingly, i.e. I-V curve corresponding to T2
Cut-in voltage compared to the I-V curve corresponding to T1 cut-in voltage to left.Since the resistivity of transparency conducting layer 3 is with temperature
The rising of degree and increase, be equivalent to and additional series resistance increased for LED chip, therefore the I-V curve corresponding to T2 is being opened
Its slope while voltage becomes smaller is opened also correspondingly to become smaller（Series resistance is equivalent to become larger）.Therefore, it is described that there is variable resistance
When junction temperature rises to T2 by T1, driving voltage and driving current remain able to stablize in V and I the LED of rate transparency conducting layer 3
Place, it is drastically raised with the rising of temperature so as to avoid LED chip driving current corresponding under constant voltage drive pattern
Problem.
Invention additionally discloses a kind of LED manufacturing methods, include the following steps：
One, grown epitaxial layer 2 on substrate 1.
Two, through photoetching and etching, table top is made on epitaxial layer 2.
Three, conductive polymer composite is uniformly coated on epitaxial layer 2 by the method for spin coating or spraying, it is conductive
Polymer composite is 1 by volume by macromolecule matrix material and conductive filler:0.01-1:1 is formed, macromolecule matrix
Material is epoxy resin, one kind in silica resin, polyethylene, vinylidene fluoride, and conductive filler is carbon black, graphene, carbon are received
One or more of mitron, metallic particles, metallic fiber, metal oxide particle.Macromolecule matrix material and conductive filler
Volume ratio be preferably 1:0.1-1:0.5.
Four, epitaxial wafer is positioned in baking oven or heating cures conductive polymer composite on hot plate.
Five, the conductive polymer composite after curing through photoetching and etching, forms the transparency conducting layer of variable resistance rate
3。
Six, make electrode through photoetching, vapor deposition, alloy process.
Seven, to substrate grinding and polishing, then epitaxial wafer is cut into independent LED device.
Embodiment
Using epoxy resin as macromolecule matrix material, tin indium oxide（ITO）As conductive filler, according to 1:0.4
Volume ratio uniformly mixes, and conductive polymer composite is made.It is by the method for spin coating that conductive polymer composite is uniform
It is coated on epitaxial layer.Then epitaxial wafer is positioned in baking oven, cured 10 minutes at 110 DEG C.Photoetching by standard and
Etching process forms the transparency conducting layer of variable resistance rate, thickness 1200.By the photoetching of standard, vapor deposition, alloy mistake
Journey makes metal electrode.Polishing is finally ground to substrate, it is about 120000 um that epitaxial wafer is cut into area2Independence
LED device.The Curie temperature Tc of the transparency conducting layer of variable resistance rate described in the present embodiment is about 100 DEG C,
Resistivity at room temperature is about 50 Ω cm, and the resistivity at a temperature of 120 DEG C is about 1000 Ω cm.When LED chip junction temperature from
When room temperature rises to 120 DEG C, the resistivity of the transparency conducting layer of the variable resistance rate also rises 20 times simultaneously.The LED core
Piece in room temperature and 120 DEG C can under constant drive voltage of the steady operation in 3V, corresponding to driving current in room temperature
With stabilization at 120 DEG C in 10mA.
The foregoing is merely the preferred embodiment of the present invention, and not to the limitation of this case design, all designs according to this case are closed
The equivalent variations that key is done each fall within the protection domain of this case.
Claims (10)
1. a kind of LED, grown epitaxial layer on substrate makes the transparency conducting layer of variable resistance rate, transparent on epitaxial layer
P electrode is made on conductive layer, and N electrode is made on epitaxial layer；It is characterized in that：Transparency conducting layer is compound by conducting polymer
Material is formed, and conductive polymer composite is 1 by volume by macromolecule matrix material and conductive filler:0.01-1:1 group
Into macromolecule matrix material is epoxy resin, one kind in silica resin, polyethylene, vinylidene fluoride, and conductive filler is charcoal
One or more of black, graphene, carbon nanotube, metallic particles, metallic fiber, metal oxide particle.
2. a kind of LED as described in claim 1, it is characterised in that：The volume ratio of macromolecule matrix material and conductive filler is
1:0.1-1:0.5。
3. a kind of LED as claimed in claim 1 or 2, it is characterised in that：The thickness of transparency conducting layer is 1-5000.
4. a kind of LED as claimed in claim 3, it is characterised in that：The thickness of transparency conducting layer is 50-3000.
5. a kind of LED manufacturing methods, it is characterised in that：Include the following steps：
One, grown epitaxial layer on substrate；
Two, through photoetching and etching, table top is made on epitaxial layer；
Three, conductive polymer composite is uniformly coated on epitaxial layer, conductive polymer composite is by macromolecule matrix
Material and conductive filler are 1 by volume:0.01-1:1 is formed, and macromolecule matrix material is epoxy resin, silica resin, is gathered
One kind in ethylene, vinylidene fluoride, conductive filler is carbon black, graphene, carbon nanotube, metallic particles, metallic fiber, metal
One or more of oxide particle；
Four, cure conductive polymer composite epitaxial wafer heating；
Five, the conductive polymer composite after curing through photoetching and etching, forms the transparency conducting layer of variable resistance rate；
Six, make electrode through photoetching, vapor deposition, alloy process；
Seven, to substrate grinding and polishing, then epitaxial wafer is cut into independent LED device.
6. a kind of LED manufacturing methods as claimed in claim 5, it is characterised in that：In step 3, pass through spin coating or spraying
Conductive polymer composite is uniformly coated on epitaxial layer by method.
7. such as a kind of LED manufacturing methods described in claim 5 or 6, it is characterised in that：In step 4, epitaxial wafer is positioned over
In baking oven or being heated on hot plate cures conductive polymer composite.
8. such as a kind of LED manufacturing methods described in claim 5 or 6, it is characterised in that：Macromolecule matrix material and conductive filler
Volume ratio be 1:0.1-1:0.5.
9. such as a kind of LED manufacturing methods described in claim 5 or 6, it is characterised in that：The thickness of transparency conducting layer is 1-5000
Å。
10. a kind of LED manufacturing methods as claimed in claim 9, it is characterised in that：The thickness of transparency conducting layer is 50-3000
Å。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610426653.5A CN105932122B (en) | 2016-06-16 | 2016-06-16 | A kind of LED and its manufacturing method |
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|---|---|---|---|
| CN201610426653.5A CN105932122B (en) | 2016-06-16 | 2016-06-16 | A kind of LED and its manufacturing method |
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| CN105932122A CN105932122A (en) | 2016-09-07 |
| CN105932122B true CN105932122B (en) | 2018-06-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108630708A (en) | 2017-03-15 | 2018-10-09 | 京东方科技集团股份有限公司 | Electrically-conductive backing plate and preparation method thereof, display device |
| CN108461644A (en) * | 2018-01-19 | 2018-08-28 | 昆山国显光电有限公司 | The preparation method and flexible display screen of a kind of conductive film, conductive film |
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| CN1996506A (en) * | 2006-12-13 | 2007-07-11 | 华南理工大学 | A making method for stibium-doped conductive tin dioxide transparent material |
| CN101018828A (en) * | 2004-09-14 | 2007-08-15 | 昭和电工株式会社 | Electroconductive resin composition, production method and use thereof |
| CN101809679A (en) * | 2007-09-28 | 2010-08-18 | 东丽株式会社 | Conductive film and method for producing the same |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
| DE102010042602A1 (en) * | 2010-10-19 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Conductive connecting agent useful for producing electrical or thermal contact between semiconductor chip and substrate of the optoelectronic component, comprises adhesive matrix and filler particles incorporated in it |
| CN102863913A (en) * | 2012-09-10 | 2013-01-09 | 常州大学 | Novel transparent conductive film and preparation method thereof |
| CN103972374A (en) * | 2013-01-25 | 2014-08-06 | 台积固态照明股份有限公司 | Multi-Vertical LED Packaging Structure |
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2016
- 2016-06-16 CN CN201610426653.5A patent/CN105932122B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101018828A (en) * | 2004-09-14 | 2007-08-15 | 昭和电工株式会社 | Electroconductive resin composition, production method and use thereof |
| CN1996506A (en) * | 2006-12-13 | 2007-07-11 | 华南理工大学 | A making method for stibium-doped conductive tin dioxide transparent material |
| CN101809679A (en) * | 2007-09-28 | 2010-08-18 | 东丽株式会社 | Conductive film and method for producing the same |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
| DE102010042602A1 (en) * | 2010-10-19 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Conductive connecting agent useful for producing electrical or thermal contact between semiconductor chip and substrate of the optoelectronic component, comprises adhesive matrix and filler particles incorporated in it |
| CN102863913A (en) * | 2012-09-10 | 2013-01-09 | 常州大学 | Novel transparent conductive film and preparation method thereof |
| CN103972374A (en) * | 2013-01-25 | 2014-08-06 | 台积固态照明股份有限公司 | Multi-Vertical LED Packaging Structure |
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