CN102142480A - Silicon-based solar cell and preparation method thereof - Google Patents
Silicon-based solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN102142480A CN102142480A CN2010106119459A CN201010611945A CN102142480A CN 102142480 A CN102142480 A CN 102142480A CN 2010106119459 A CN2010106119459 A CN 2010106119459A CN 201010611945 A CN201010611945 A CN 201010611945A CN 102142480 A CN102142480 A CN 102142480A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- silicon
- array
- electrode
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 115
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 114
- 239000010703 silicon Substances 0.000 title claims abstract description 114
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 239000006185 dispersion Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000000873 masking effect Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 15
- 239000000243 solution Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000004224 protection Effects 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229920000557 Nafion® Polymers 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a silicon-based solar cell, comprising the following steps: successively depositing metal and photoresist on the surface of a silicon substrate; according to a preset photoetch pattern, removing the corresponding photoresist and metal so as to expose the silicon substrate; taking the metal as a mask to etch the exposed silicon substrate to form a silicon post array; removing the masking metal and the photoresist; forming a pn knot on the silicon substrate with the silicon post array; manufacturing a back electrode on the back of the silicon substrate to form a first electrode of the solar cell; coating a graphene conducting film on the pn knot to manufacture a front electrode; and forming a second electrode of the solar cell. By utilizing the preparation method, the conversion efficiency of the transistor solar cell is improved, and the production cost is lowered. The invention also discloses a silicon-based solar cell obtained by the preparation method.
Description
Technical field
The invention belongs to the area of solar cell in the photoelectric device, relate in particular to a kind of high performance solar batteries based on crystalline silicon and preparation method thereof.
Background technology
From 1954, the birth of first monocrystalline silicon silicon solar cell so far, silica-based solar cell has experienced two stages: be the first generation solar cell of representative and be the second generation solar cell of representative with the amorphous silicon membrane with crystalline silicon and polysilicon.Yet, the upper surface of traditional silicon based solar battery (sensitive surface) has the silver electrode of collecting charge carrier, the existence of silver electrode has influenced the absorption of battery to sunlight, there is the sunlight about 10% can't to be absorbed by solar cell because of blocking of silver electrode, and silver electrode just is present in the part surface of battery, most of charge carrier need could be absorbed by silver electrode through the certain distance of transmission, and the part charge carrier can lose in transport process, has reduced the conversion efficiency of solar cell.
Based on this, how to introduce the approach that various new ideas and technology thereof solve the problems referred to above, becoming one of most important developing direction of silica-based solar cell, also is the support technology of realizing the conception of third generation solar cell, and its preparation method has become the international research focus with characteristic research.
Summary of the invention
Purpose of the present invention is intended to one of solve the aforementioned problems in the prior at least.
For this reason, embodiments of the invention propose solar cell of a kind of conversion efficiency that can improve silica-based solar cell and preparation method thereof.
According to an aspect of the present invention, the embodiment of the invention has proposed a kind of preparation method of silica-based solar cell, said method comprising the steps of: a) at surface of silicon substrate plated metal successively and photoresist; B) remove corresponding photoresist and metal according to predetermined photoengraving pattern, to expose silicon substrate; C) silicon substrate that exposes as shelter etching with described metal forms silicon post array; D) metal and photoresist are sheltered in removal, and form the pn knot on the silicon substrate with silicon post array; E) make back electrode at the back side of silicon substrate, form first electrode of solar cell; And f) by electrode before tying graphene coated conductive film at described pn and making, second electrode of formation solar cell.
The further embodiment according to the present invention, described metal are Al or Ag, and deposit thickness is 200～500nm.
The further embodiment according to the present invention, described predetermined photoengraving pattern are rectangular array, circular array or polygon array.
The further embodiment according to the present invention, the etching among the step c is a dry etching, to form vertical silicon post array.
The further embodiment according to the present invention, the silicon post height of described silicon post array is 4～20 μ m.The silicon post unit sizes of described silicon post array is 500～5000nm.
The further embodiment according to the present invention, described preceding electrode is made and be may further comprise the steps: graphite powder and volatile organic solution are evenly mixed, obtain the Graphene dispersion liquid; The Graphene dispersion liquid evenly is transferred to described pn to be tied; And the volatile organic solution of removing in the Graphene dispersion liquid obtains described graphene conductive film.
The further embodiment according to the present invention also comprises the step of the silicon substrate that is coated with the graphene conductive film being carried out annealing in process after described step f.
The further embodiment according to the present invention, described step e carry out after step f.
According to a further aspect in the invention, embodiments of the invention propose a kind of silica-based solar cell, and described solar cell comprises: have the silicon substrate of silicon post array, wherein said silicon post array is by carrying out patterning to surface of silicon and etching forms; Be formed on the pn knot on the described silicon post array; Be coated in the graphene conductive film that described pn ties, to form first electrode of solar cell; And the back electrode that is formed on the back side of silicon substrate, to form second electrode of solar cell.
The further embodiment according to the present invention, the patterned graph of described silicon post array correspondence is rectangular array, circular array or polygon array.
The further embodiment according to the present invention, described etching is a dry etching, to form vertical silicon post array.
The further embodiment according to the present invention, the silicon post height of described silicon post array is 4～20 μ m.The silicon post unit sizes of described silicon post array is 500～5000nm.
The further embodiment according to the present invention, described graphene conductive film is by obtaining graphite powder and even mixing of volatile organic solution.
The further embodiment according to the present invention, the described annealed processing of silicon substrate that is coated with the graphene conductive film.
The introducing of micron silicon post array of the present invention and Graphene transparent conductive film can effectively reduce the transmission range of photo-generated carrier, improves collection efficiency.And the Graphene transparent conductive film can reduce traditional silica-based solar cel electrode to the blocking of light, and has improved the absorption of battery to light.
The present invention is the new construction and preparation method thereof of the silicon post solar cell of electrode with the Graphene, under the prerequisite of part and existing solar cell preparation technology compatibility, proposed innovation structure,, reduced the production cost of solar cell to improve the conversion efficiency of crystal silicon solar batteries.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is preparation method's flow chart of the silica-based solar cell of the embodiment of the invention;
Fig. 2 is the schematic diagram of each production phase of silica-based solar cell of the embodiment of the invention to Figure 10.
Embodiment
The present invention relates generally to a kind of silica-based solar cell and preparation method thereof.Disclosing hereinafter provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter parts and the setting to specific examples is described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the property of can be applicable to of other technologies and/or the use of other materials.In addition, first feature described below second feature it " on " and/or the structure of " top " can comprise that first and second features form the embodiment of direct contact, can comprise that also additional features is formed on the embodiment between first and second features, such first and second features may not be direct contacts.
With reference to figure 1, Fig. 1 shows the preparation method's of silica-based solar cell flow chart according to an embodiment of the invention.In step 101, at first at a plated metal 201 of silicon substrate 202, as shown in Figure 2.
Wherein silicon substrate can be a p type silicon chip, also can n type silicon chip.Preferably, step 101 can adopt the mode of electron beam evaporation, magnetron sputtering or thermal evaporation to come plated metal.
Preferably, the metal of deposition can be Al or Ag, and the THICKNESS CONTROL of plated metal is between 200～500nm.
For example, in one embodiment, can be on P type silicon substrate plated metal Al.Adopting EVP92 electron beam vacuum coating system, is below 1.1 * 10-6Torr in vacuum degree, and constant-temperature evaporation metal A l, thickness are 3000
Evaporation rate is 1
Then in step 102, deposited the one side spin coating photoresist 203 of metal 201 at silicon substrate 202, as shown in Figure 3, and the photoetching patterned graph 303 that obtains designing, as shown in Figure 4.
Patterned graph in the step 102 is to obtain in also exposure of one side, the development that silicon substrate 202 has metal 201 by spin coating photoresist 203.Patterned graph 303 can be a rectangular array, circular array or polygon array, and the size of the component units of graphic array is between 500nm～5000nm.
For example adopt 9912 photoresists, rotating speed 3600rpm, rotational time are 20s; After finishing, put into baking oven, 90 ℃ are toasted 40mins down, cool off 10mins then.Thereby finish the spin coating of photoresist on metal 201.
Then, use SUSS MicroTec MA6 mask aligner, light intensity 25mW, the time for exposure is 8s; 90 ℃ of middle bakings, 10mins; Adopt special-purpose developing liquid developing 6.5s; Post bake 40mins, temperature is 110 ℃, obtains figure 303 after photoetching is finished.
In step 103, the silicon substrate of the described structure of Fig. 4 is carried out chemical corrosion, remove the metal film that does not have the photoresist protection, expose the silicon face under the metal, as shown in Figure 5.
Preferably, the constituent of the needed corrosive liquid of chemical corrosion is not fixed in the step 103, can remove corresponding metal, and promptly aluminium or silver get final product, and such as for the metal 201 that is Al, can adopt H
3PO
4Deng, for the metal 201 that is Ag, can adopt HNO
3Deng.
And, carry out time difference to some extent of chemical corrosion with the different of metal and corrosive liquid, the standard that etches is that the metal of sheltering is removed fully, and the metal under the photoresist of corresponding figure 303 keeps substantially.
For example in specific embodiment, carry out chemical corrosion for the metal 201 of Al, remove the metal film that does not have the photoresist protection, adopt the H of water-bath dilution
3PO
4As corrosive liquid, temperature about 300K, H
3PO
4With the deionized water percent by volume be 1: 5, etching time 1min removes with Al and totally to be as the criterion.
In step 104,, form silicon post array, as shown in Figure 6 with the silicon substrate 202 that metal 201 exposes as shelter etching.
In embodiments of the present invention, can adopt the method for wet method or dry etching grown silicon post.Preferably, described etching is a dry etching, to form vertical silicon post array.Can accurately control the size of silicon post like this, and the silicon post of making is vertical distribution, can helps the preparation of subsequent device.
By step 104, in the place that does not have metal 201 protections, the silicon substrate 202 of counterpart is etched away, and has the local silicon of metal 201 masking protections to remain, and forms silicon post array, and wherein the height of the silicon post of Xing Chenging is between 4～20 μ m.
For example in specific embodiment, adopt the ICP98 type dry etching machine of Chinese Academy of Sciences Microelectronics Institute's development.Adopt the ICP pattern; Etching power is: electric pole plate power is between the 50W, and bottom crown power is: between the 400W; Etching gas is: CH
3F gas and SF
6Gas; By ratio and the final etch rate of flow control of regulating two kinds of gases.Etch rate is controlled at: v=400nm/min, etching depth are 5 μ m.
In step 105, remove and shelter metal 201 and photoresist 303, as shown in Figure 7.Here, remove masking layer and photoresist and can adopt multiple modes such as wet etching or dry etching,, expose silicon face and get final product as long as can remove remaining metal and the photoresist sheltered.
For example in specific embodiment, for the metal 201 that is Al, can adopt high temperature hydrochloric acid to remove metal A l, the volume fraction of hydrochloric acid is 37.5%, when removing metal A l, removes attached to the photoresist on the Al thereupon.
In step 106, make pn knot 204 in the side that silicon post array is arranged, as shown in Figure 8.For n type silicon substrate 202, be exactly on silicon post array, to form p type district, for p type silicon substrate 202, be exactly on silicon post array, to form n type district.
The mode of above-mentioned making pn knot can adopt diffusion or ion injection mode, forms suitable pn knot, and junction depth is between 200～600nm.
For example in specific embodiment, can adopt diffusion technology ripe on the manufacture of solar cells line to realize, pn knot junction depth is 300nm.After diffusion is finished, the solar cell etching machine that electric group 48 is produced in the employing is removed the diffusion zone of edge, uses the HF solution (volume ratio of HF and deionized water is 1: 20) of dilution to soak 180s then, pass through the flushing of deionized water again, dry with drier.
In step 107, at the back side of silicon substrate 202, promptly there is not the one side of silicon pillar array structure to make back electrode 205, as shown in Figure 9, to obtain first electrode of solar cell.The position that makes back electrode 205 is a side that does not have the silicon post at silicon substrate 202.
Preferably, make back electrode 205 and can adopt silk screen printing slurry and sintering, or the mode of plated metal and annealing finishes, the metal of slurry or deposition is difference to some extent with the difference of substrate: for p type substrate 202, adopt Al slurry or plated metal Al; For n type substrate 202, adopt Ag slurry or plated metal Ag, be as the criterion forming good Ohmic contact with substrate 202.
For example in specific embodiment, can adopt the screen printing technique that uses on the manufacture of solar cells line, process printing back electrode grid line, 230 ℃ of baking 2mins, printing aluminium back of the body field, 210 ℃ of baking 2mins.Enter chain type diffusion furnace sintering then, form good Ohmic contact.
After forming back electrode 205, electrode before needing to make, thereby second electrode of formation solar cell.
For first electrode and second electrode of solar cell, if silicon substrate is the p type, then first electrode of corresponding back electrode is the positive pole of solar cell, and second electrode of corresponding preceding electrode is the negative pole of solar cell; Otherwise if silicon substrate is the n type, then first electrode of corresponding back electrode is the negative pole of solar cell, and second electrode of corresponding preceding electrode is the positive pole of solar cell.
And, in one embodiment, make the step 107 of back electrode and can before forming the graphene conductive film, the step of electrode carry out afterwards.
In embodiments of the present invention, utilize the graphene conductive film to form the preceding electrode of solar cell.Concrete making step is as described below.
At first, in step 108, utilize volatile organic solvent to prepare the Graphene dispersion liquid.Preparation Graphene dispersion liquid is that a certain amount of graphite powder is sneaked in the volatile organic solvent, organic solvent can be dinethylformamide (DFM) or perfluorinated sulfonic resin (Nafion) etc., utilize ultrasonic cell pulverization processor pair solution-treated certain hour again, solution is mixed.
For example in specific embodiment, can be at normal temperatures, get the 3g graphite powder and put into the 200ml beaker,, utilize ultrasonic cell pulverization machine to handle 1h to wherein adding volatile organic solvent dinethylformamide (DFM) 150ml, in the processing procedure, take out beaker water-bath cooling once every 15min, leave standstill about 8h after finishing, utilize centrifuge centrifugal 30min under the 5000rpm rotating speed again, obtain upper strata 3/5 part of liquid with dropper, collect and obtain black Graphene dispersion liquid.
Then, in step 109, the Graphene dispersion liquid is transferred to the one side that silicon substrate 202 has the silicon post.
The mode that wherein shifts the Graphene dispersion liquid has multiple, such as utilizing spray gun or utilizing other modes such as mode of spin coating, main purpose is the Graphene dispersion liquid to be transferred to equably the side that silicon substrate has the silicon post, also to remove the volatile organic solvent in the Graphene dispersion liquid simultaneously, make the Graphene can be closely attached to surface of silicon, form graphene film 206, as shown in figure 10.
For example in specific embodiment, silicon substrate is placed on the glue spreader, the Graphene dispersant liquid drop is coated onto on the silicon substrate glue spreader rotating speed 1200rpm, spin coating 30s with dropper, silicon substrate is transferred on the ready hot plate rapidly then, 150 ℃ of hot plate temperatures are placed 1min, and the volatile organic solvent in the Graphene dispersion liquid can volatilize totally very soon, Graphene then can be stayed on the silicon substrate, forms graphene film.
At last, in step 110, the silicon substrate 202 that sprayed the Graphene dispersion liquid and be formed with graphene film 206 is carried out annealing in process, finish the making of solar cell.
Silicon substrate is annealed, and is to carry out annealing in process in air, and the purpose of annealing is to improve Graphene to the transmitance of light and reduce the resistivity of Graphene.
For example in specific embodiment, silicon substrate is pushed in the annealing furnace,, finish with the Graphene preparation of the silicon post solar cell that is electrode through 250 ℃ of annealing 2h.
It is pointed out that the above-mentioned specific embodiment mode that arrives step 110 about step 101 only for the simple clear schematic example of describing the principle of the invention, is not that the present invention is done any pro forma restriction, more especially can pass through the step that existing technology realizes.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Those of ordinary skills obviously as can be known, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
The present invention compared with prior art has following tangible advantage and beneficial effect:
1, silicon post array is compared with traditional crystalline silicon structure, can effectively the light absorption direction be separated with the carrier transport direction, thereby the transmission range of minimizing photo-generated carrier improves collection efficiency;
2, the Graphene transparent conductive film is compared with the silver electrode of routine, can significantly reduce blocking of electrode pair light, improves the absorption of battery to light, thereby improves the conversion efficiency of battery;
3, the Graphene transparent conductive film is different with conventional electrodes collection charge carrier, can reduce the distance of carrier transport to electrode, reduces the recombination probability of charge carrier, thereby improves the conversion efficiency of battery;
Aspect prepared, following practical advantage is arranged than other technologies:
1, the present invention has adopted metal A l or Ag as masking layer, and cost is low.Because metal A l or Ag are extensive in distributed in nature, and cheap, nontoxic, so can not increase the preparation cost of battery;
2, the present invention has adopted the prepared crystal silicon nano-pillar of dry etching, and step is simple, is easy to the nano column array of large-area preparation rule.Dry etching equipment is widely used for removing the marginal portion (limit at quarter) of solar cell in traditional production of crystalline silicon solar batteries, so dry etch step does not additionally increase equipment.And step is simple, the efficient height;
3, the cost of material of preparation Graphene is cheap, obtain easily, and the whole process temperature of preparation Graphene lower (not can above 300 ℃), and devices needed does not need custom-made, and the technology of employing also all is maturation process, time spent weak point, efficient height.Be very beneficial for extensive promotion and application of the present invention.
In sum, the present invention is the new construction and preparation method thereof of the silicon post solar cell of electrode with the Graphene, under the prerequisite of part and existing solar cell preparation technology compatibility, innovation structure has been proposed, to improve the conversion efficiency of crystal silicon solar batteries, reduce the production cost of solar cell.Thereby move towards practicability, the creation of value.The present invention has above-mentioned many advantages and practical value, has large improvement technically, and has produced handy and practical effect, thereby be suitable for practicality more.
Though describe in detail about example embodiment and advantage thereof, be to be understood that under the situation of the protection range that does not break away from the qualification of spirit of the present invention and claims, can carry out various variations, substitutions and modifications to these embodiment.For other examples, when those of ordinary skill in the art should understand easily in keeping protection range of the present invention, the order of processing step can change.
In addition, range of application of the present invention is not limited to technology, mechanism, manufacturing, material composition, means, method and the step of the specific embodiment of describing in the specification.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technology, mechanism, manufacturing, material composition, means, method or the step that have existed or be about to later on develop at present, wherein they are carried out the corresponding embodiment cardinal principle identical functions of describing with the present invention or obtain identical substantially result, can use them according to the present invention.Therefore, claims of the present invention are intended to these technology, mechanism, manufacturing, material composition, means, method or step are included in its protection range.
Claims (18)
1. the preparation method of a silica-based solar cell said method comprising the steps of:
A) at surface of silicon substrate plated metal successively and photoresist;
B) remove corresponding photoresist and metal according to predetermined photoengraving pattern, to expose silicon substrate;
C) silicon substrate that exposes as shelter etching with described metal forms silicon post array;
D) metal and photoresist are sheltered in removal, and form the pn knot on the silicon substrate with silicon post array;
E) make back electrode at the back side of silicon substrate, form first electrode of solar cell; And
F) by electrode before tying graphene coated conductive film at described pn and making, second electrode of formation solar cell.
2. preparation method according to claim 1 is characterized in that, described metal is Al or Ag, and deposit thickness is 200～500nm.
3. preparation method according to claim 1 is characterized in that, described predetermined photoengraving pattern is rectangular array, circular array or polygon array.
4. preparation method according to claim 1 is characterized in that, the etching among the step c is a dry etching, to form vertical silicon post array.
5. according to claim 1 or 4 described preparation methods, it is characterized in that the silicon post height of described silicon post array is 4～20 μ m.
6. according to claim 1 or 4 described preparation methods, it is characterized in that the silicon post unit sizes of described silicon post array is 500～5000nm.
7. preparation method according to claim 1 is characterized in that, the junction depth of described pn knot is 200～600nm.
8. formation method according to claim 1 is characterized in that, described preceding electrode is made and be may further comprise the steps:
Graphite powder and volatile organic solution are evenly mixed, obtain the Graphene dispersion liquid;
The Graphene dispersion liquid evenly is transferred to described pn to be tied; And
The volatile organic solution of removing in the Graphene dispersion liquid obtains described graphene conductive film.
9. formation method according to claim 1 is characterized in that, also comprises the step of the silicon substrate that is coated with the graphene conductive film being carried out annealing in process after described step f.
10. formation method according to claim 1 is characterized in that, described step e carries out after step f.
11. a silica-based solar cell, described solar cell comprises:
Silicon substrate with silicon post array, wherein said silicon post array is by carrying out patterning to surface of silicon and etching forms;
Be formed on the pn knot on the described silicon post array;
Be coated in the graphene conductive film that described pn ties, to form first electrode of solar cell; And
Be formed on the back electrode at the back side of silicon substrate, to form second electrode of solar cell.
12. solar cell according to claim 11 is characterized in that, the patterned graph of described silicon post array correspondence is rectangular array, circular array or polygon array.
13. solar cell according to claim 11 is characterized in that, described etching is a dry etching, to form vertical silicon post array.
14., it is characterized in that the silicon post height of described silicon post array is 4～20 μ m according to claim 11 or 13 described solar cells.
15., it is characterized in that the silicon post unit sizes of described silicon post array is 500～5000nm according to claim 11 or 13 described solar cells.
16. solar cell according to claim 11 is characterized in that, the junction depth of described pn knot is 200～600nm.
17. solar cell according to claim 11 is characterized in that, described graphene conductive film is by obtaining graphite powder and even mixing of volatile organic solution.
18. solar cell according to claim 11 is characterized in that, the described annealed processing of silicon substrate that is coated with the graphene conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106119459A CN102142480A (en) | 2010-12-29 | 2010-12-29 | Silicon-based solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106119459A CN102142480A (en) | 2010-12-29 | 2010-12-29 | Silicon-based solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102142480A true CN102142480A (en) | 2011-08-03 |
Family
ID=44409863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106119459A Pending CN102142480A (en) | 2010-12-29 | 2010-12-29 | Silicon-based solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102142480A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315288A (en) * | 2011-09-30 | 2012-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Thin film solar cell and preparation method thereof |
| CN103311323A (en) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | Graphene/silicon solar cell and manufacturing method thereof |
| CN103943716A (en) * | 2013-01-17 | 2014-07-23 | 上海交通大学 | Micro nano structure solar battery and preparation method of back light trapping structure thereof |
| CN105140117A (en) * | 2015-08-14 | 2015-12-09 | 中国科学院重庆绿色智能技术研究院 | Annealing method capable of stably improving photoelectric property of graphene |
| CN106409922A (en) * | 2016-09-30 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Crystalline silicon flexible battery and manufacturing method thereof |
| CN113140676A (en) * | 2020-01-20 | 2021-07-20 | 复旦大学 | Preparation method of organic molecular film based on liquid drops and micro-nano device array thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009070933A (en) * | 2007-09-12 | 2009-04-02 | Oji Paper Co Ltd | Substrate for forming fine uneven surface structure having single particle film etching mask and manufacturing method thereof, and fine uneven surface structure |
| CN101671015A (en) * | 2009-10-13 | 2010-03-17 | 南昌航空大学 | Method of producing graphene |
| WO2010109692A1 (en) * | 2009-03-25 | 2010-09-30 | 三菱電機株式会社 | Method for roughening substrate surface and method for manufacturing photovoltaic device |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
-
2010
- 2010-12-29 CN CN2010106119459A patent/CN102142480A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009070933A (en) * | 2007-09-12 | 2009-04-02 | Oji Paper Co Ltd | Substrate for forming fine uneven surface structure having single particle film etching mask and manufacturing method thereof, and fine uneven surface structure |
| WO2010109692A1 (en) * | 2009-03-25 | 2010-09-30 | 三菱電機株式会社 | Method for roughening substrate surface and method for manufacturing photovoltaic device |
| CN101671015A (en) * | 2009-10-13 | 2010-03-17 | 南昌航空大学 | Method of producing graphene |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315288A (en) * | 2011-09-30 | 2012-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Thin film solar cell and preparation method thereof |
| CN103943716A (en) * | 2013-01-17 | 2014-07-23 | 上海交通大学 | Micro nano structure solar battery and preparation method of back light trapping structure thereof |
| CN103943716B (en) * | 2013-01-17 | 2016-08-03 | 上海交通大学 | A kind of micro-nano structure solaode and the preparation method of back side light trapping structure thereof |
| CN103311323A (en) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | Graphene/silicon solar cell and manufacturing method thereof |
| CN103311323B (en) * | 2013-06-21 | 2015-11-25 | 浙江大学 | A kind of graphene/silicon solar cell and manufacture method thereof |
| CN105140117A (en) * | 2015-08-14 | 2015-12-09 | 中国科学院重庆绿色智能技术研究院 | Annealing method capable of stably improving photoelectric property of graphene |
| CN106409922A (en) * | 2016-09-30 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Crystalline silicon flexible battery and manufacturing method thereof |
| CN106409922B (en) * | 2016-09-30 | 2018-05-18 | 中国电子科技集团公司第四十八研究所 | Crystal silicon flexible battery and preparation method thereof |
| CN113140676A (en) * | 2020-01-20 | 2021-07-20 | 复旦大学 | Preparation method of organic molecular film based on liquid drops and micro-nano device array thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102142480A (en) | Silicon-based solar cell and preparation method thereof | |
| CN101840952B (en) | Method for preparing double-sided PN junction solar battery | |
| CN103887347B (en) | A kind of two-sided P-shaped crystalline silicon battery structure and preparation method thereof | |
| CN105814695A (en) | Nano-structured multi-junction photovoltaic devices | |
| CN105609594B (en) | The preparation method of N-type double-sided solar battery | |
| KR101676750B1 (en) | Wafer type solar cell and method for manufacturing the same | |
| TWI536597B (en) | A low cost, suitable for mass production of back contact with the battery production methods | |
| SG191045A1 (en) | Solar cell and solar-cell module | |
| CN108922938A (en) | A kind of back contacts heterojunction solar battery and preparation method thereof | |
| CN101840953B (en) | Method for preparing surface hybrid modulation crystal silicon solar battery | |
| CN109616541A (en) | Transition-metal dichalcogenide transverse direction homogeneity joint solar cell and preparation method thereof | |
| CN108123046A (en) | A kind of perovskite/n-type crystalline silicon stacked solar cell, cascade solar cell and its manufacturing method | |
| CN104332522B (en) | Graphene double-junction solar battery and preparation method thereof | |
| CN103474506A (en) | Method for manufacturing bifacial solar cell | |
| CN103875082B (en) | The manufacture method of photovoltaic devices and photovoltaic devices | |
| Aurang et al. | Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices | |
| CN107785457A (en) | A kind of manufacture craft of the two-sided crystal silicon solar battery of p-type | |
| CN106024933A (en) | Crystalline silicon solar battery back side local double mass impurity doped structure and doping method thereof | |
| Vitanov et al. | Fabrication of buried contact silicon solar cells using porous silicon | |
| CN104576713A (en) | Pn junction and preparation method | |
| CN102280501B (en) | Silicon-based buried contact film solar cell | |
| CN204741023U (en) | Novel flexible solar panel | |
| CN106328752A (en) | Planar lateral collection structure indium gallium arsenic infrared detector chip | |
| Chen et al. | High efficiency screen-printed 156cm 2 solar cells on thin epitaxially grown silicon material | |
| KR101132268B1 (en) | Flxible photovoltaic device and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110803 |