CN105098021A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting device Download PDFInfo
- Publication number
- CN105098021A CN105098021A CN201410203893.XA CN201410203893A CN105098021A CN 105098021 A CN105098021 A CN 105098021A CN 201410203893 A CN201410203893 A CN 201410203893A CN 105098021 A CN105098021 A CN 105098021A
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- CN
- China
- Prior art keywords
- light emitting
- semiconductor device
- emitting semiconductor
- transparent base
- luminous chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
The invention discloses a semiconductor light emitting device, comprising a transparent substrate and a plurality of semiconductor light emitting chips mounted on the transparent substrate. The plurality of semiconductor light emitting chips are connected in series and/or in parallel through conductors formed on the transparent substrate. A groove for at least a part of the light emitting into the transparent substrate to emit through the transparent substrate is disposed in at least one portion, between the adjacent semiconductor light emitting device, on the transparent substrate. The groove is preferably V-shaped. The invention can be used for effectively improving the effective light emitting area of the semiconductor light emitting device, and substantially increasing the light emitting efficiency.
Description
Technical field
The present invention relates to a kind of light emitting semiconductor device, particularly relate to a kind of light emitting semiconductor device.
Background technology
Last century, the sixties, first LED product was born in the U.S., and its appearance brings a lot of brilliance to the life of people, and have the advantages such as life-span length, low-power consumption, environmental protection due to LED, associated technical development obtains very fast.It becomes " ubiquitous ", with the closely bound up photoelectric device of human lives and light source, the backlight of such as mobile phone, traffic lights, large-screen full color display and view brightening lamp etc.
Along with the rise that the breakthrough of adulterating with GaN (gallium nitride) material P type is the third generation semi-conducting material of starting point, along with the high brightness light emitting diode (LightEmittingDiode based on III group-III nitride, LED) technological break-through, the nitride LED for new generation of green environmental protection solid light source is becoming new study hotspot.At present, the continuous upgrading of LED application and market, for the demand of LED, make LED just towards high-power and future development that is high brightness.Wherein one of study hotspot is high voltage direct current LED technology, and it adopts multiple chips to form a total light-emitting diodes form of tubes, i.e. plurality of LEDs series connection formation LED.
Current high-voltage LED technology belongs to emerging technology category, and its technology exists some problems:
The light extraction efficiency of LED chip has to be hoisted, use in theory the luminous efficiency of blue LED excited yellow fluorescent material synthesize white light up to every watt 300 multithread bright, but present actual efficiency is less than the half of theoretical value, about 1/3rd of theoretical value that the chances are, one of them major reason is that the light that a part sends from active region cannot escape out from LED chip inside.Metal electrode, chip material itself and base material are to the absorption of light and to block the loss that LED light is imitated very large.
In addition, the inefficient another one reason of LED chip light extraction is that the refractive index of epitaxial material is much larger than air refraction, and the figure of traditional LED chip often adopts the layout of rectangular element, the ambient light taking-up angle of rectangular dies is very little, thus the light making active area produce effectively can not be launched due to total internal reflection from LED, causes the external quantum efficiency of LED lower.
Summary of the invention
The object of the present invention is to provide a kind of light emitting semiconductor device, to solve the aforementioned technical problem in existing light emitting semiconductor device, the technical problem that such as LED component light extraction efficiency is low and the higher problem of manufacturing cost.
For achieving the above object, the invention provides following technical scheme:
A kind of light emitting semiconductor device, comprise transparent base and be installed on the plural semiconductor luminous chip on described transparent base, by being formed at electric conductor series connection on described transparent base and/or in parallel between this plural semiconductor luminous chip, and transparent base at least between adjacent semiconductor luminescence chip offers at least in order to make to inject the groove penetrated at least part of light self-induced transparency base material of described transparent base.
Preferably, described groove is V-type groove.
Particularly preferred, the angle between the cell wall of described V-type groove relative both sides is 25 ° ~ 65 °.
Preferably, described semiconductor luminous chip upside-down mounting is on described transparent base.
Further, the electrode zone on P, N semiconductor layer of the epitaxial loayer of described semiconductor luminous chip is electrically connected through conductive contact and electric conductor respectively.
Wherein, material at least selectable from glass, sapphire, carborundum or organic transparent body of the substrate of described transparent base or described semiconductor luminous chip, and be not limited thereto.
Wherein, described electric conductor at least can select transparency conducting layer or metallic conductor, the material at least optional autoxidation indium tin of described transparency conducting layer, zinc oxide, Graphene or carbon nano-tube, and is not limited thereto.
Wherein, described metallic conductor, the material of such as metal wire at least can be selected from Cr, Al, Ag, Ni, Au or certain combination between them, and is not limited thereto.
But especially preferred, described electric conductor adopts transparency conducting layer.
Preferably, described semiconductor luminous chip has triangular cross section and/or trapezoidal longitudinal cross section.
Further, described light emitting semiconductor device also comprises at least in order to wrap up the encapsulated layer of arbitrary semiconductor luminous chip, and in described and/or top layer is distributed with fluorescent material.
Further, described light emitting semiconductor device also comprises the encapsulated layer in order to light emitting semiconductor device described in overall package, and in described encapsulated layer and/or top layer is distributed with fluorescent material.
Compared with prior art, advantage of the present invention comprises:
(1) in light emitting semiconductor device of the present invention, substrate, base material, conductive layer all can adopt transparent material, avoid the stop to bright dipping of electrode, base material and substrate, achieve the bright dipping of space full angle, improve light extraction efficiency;
(2) LED chip have employed the triangle lateral cross section and trapezoidal longitudinal cross section that are more conducive to sidewall bright dipping, significantly improves the light extraction efficiency of each chip;
(3) transparent base between LED chip offers groove, particularly V-type groove, significantly can increase lighting area, improve the light extraction efficiency of light emitting semiconductor device further.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Figure 1 shows that the structural representation of a kind of light emitting semiconductor device in the specific embodiment of the invention;
Figure 2 shows that the structural representation of another kind of light emitting semiconductor device in the specific embodiment of the invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.The example of these preferred implementations illustrates in the accompanying drawings.Shown in accompanying drawing and the embodiments of the present invention described with reference to the accompanying drawings be only exemplary, and the present invention is not limited to these execution modes.
At this, also it should be noted that, in order to avoid the present invention fuzzy because of unnecessary details, illustrate only in the accompanying drawings with according to the closely-related structure of the solution of the present invention and/or treatment step, and eliminate other details little with relation of the present invention.
Ginseng Fig. 1 shown in, light emitting semiconductor device comprises transparent base 1, and the material of transparent base 1 is selected from clear glass, sapphire, carborundum or organic transparent body, and organic transparent body comprises PC(Merlon), PMMA(polymethyl methacrylate) etc.Preferably, the material of transparent base 1 is glass that is cheap and that easily obtain.
On transparent base 1, upside-down mounting is provided with multiple semiconductor luminous chip, such as, be shown with 2 in LED chip 3(figure), LED chip 3 comprises transparent substrates and is formed at the epitaxial loayer in transparent substrates, and the material of transparent substrates is selected from sapphire, carborundum, zinc oxide or glass.
Further, the cross section of each LED chip 3 is set to triangle, is more preferably isosceles triangle or equilateral triangle.Further, the side of LED chip 3 is non-vertical planes, that is the angle of the side of LED chip and the horizontal plane at substrate floor place is non-90 degree, and this angle can be acute angle also can be obtuse angle.LED chip have employed the triangle being more conducive to sidewall bright dipping, significantly improves the light extraction efficiency of each chip.
LED chip directly by series connection and/or parallel way upside-down mounting over the transparent substrate, without the need to arranging transfer base substrate separately, and ensure that light emitting semiconductor device has normal service behaviour, particularly when connection in series-parallel is combined, existing light emitting semiconductor device can be reduced due to welded wire (being commonly referred to routing) and connect the failure rate produced.And, after all LED chips in a light emitting semiconductor device are all incorporated in a current circuit, only need to arrange the general supply access interface coordinated with this current circuit in the devices, and be connected with power supply with this general supply access interface, thus make devices function, so can simplify the structure of light emitting semiconductor device, its production cost of further reduction, simplify its production technology, make its easily standardization making in enormous quantities, aforementioned general supply port can adopt all kinds of forms known to industry, such as grafting port.
Connected by transparency conducting layer 2 between adjacent LED chip 3 and/or parallel connection, to form holistic luminescent device.Transparency conducting layer 2 is formed at the surface of transparent base 1, and the electrode 4 of LED chip 3 is fixed by the modes such as bonding and transparency conducting layer 2.The material of transparency conducting layer 2 is selected from tin indium oxide, zinc oxide, carbon nano-tube or Graphene etc.
Transparent base between adjacent LED chip 3 offers groove 5, and groove 5 is preferably V-type groove, and the angle bottom it is preferably 25 ° ~ 65 °, is more preferably 45 °.By the setting of V-type groove, add the lighting area of glass baseplate on the one hand, on the other hand, avoid and because of total internal reflection, part light effectively cannot be launched from glass baseplate, improve light extraction efficiency.
Postscript, for making to keep good electric connection between adjacent LED chip, the various modes that industry can be adopted known make transparency conducting layer continuous distribution between adjacent LED chip.Such as, aforementioned grooves can be offered over the transparent substrate, then in groove, fill expendable material, the material that such as organic solvents available, water or corrosive gas, liquid dissolves or etching are removed, and make the top end face of expendable material and transparent substrate surface substantially concordant, then form continuous print transparency conducting layer at transparent substrate surface, remove described expendable material afterwards, that is, the transparency conducting layer of vacant state is formed in described groove notch.Or also can offer aforementioned grooves over the transparent substrate, then adopt the mode such as conformal deposited, coating and printing to form continuous print transparency conducting layer on transparent substrate surface and groove cell wall, its operation is more easy, and cost is more cheap.Wherein be wherein comparatively typical case study on implementation shown in Fig. 1-Fig. 2.
Refer to Fig. 1-Fig. 2 again, this light emitting semiconductor device also can be enclosed with encapsulated layer, encapsulated layer can be made up of organic silica gel or epoxy resin 7 etc., wherein can Uniform Doped, be coated with fluorescent material 6 etc., to realize the radiative wavelength convert of LED chip, and by this kind of packing forms, the light that also device can be made to launch has better uniformity.And the type of described fluorescent material can be chosen according to the demand of practical application, its acquiring way also can have multiple, such as, can derive from commercially available approach.The amount of light of LED chip can be increased by organic silica gel or epoxy resin on the one hand, the decay of LED chip or fluorescent material can also be avoided on the other hand, increase the useful life of LED chip and fluorescent material.
In sum, by design of the present invention, can realize 4 π solid angle entirely lightings of light emitting semiconductor device, optical efficiency is high.
Finally also it should be noted that, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.
Claims (10)
1. a light emitting semiconductor device, it is characterized in that the plural semiconductor luminous chip comprising transparent base and be installed on described transparent base, by being formed at electric conductor series connection on described transparent base and/or in parallel between this plural semiconductor luminous chip, and transparent base at least between adjacent semiconductor luminescence chip offers at least in order to make to inject the groove penetrated at least part of light self-induced transparency base material of described transparent base.
2. light emitting semiconductor device according to claim 1, is characterized in that described groove is V-type groove.
3. light emitting semiconductor device according to claim 2, is characterized in that the angle between the cell wall of described V-type groove relative both sides is 25 ° ~ 65 °.
4. light emitting semiconductor device according to claim 1, is characterized in that described semiconductor luminous chip upside-down mounting is on described transparent base.
5. light emitting semiconductor device according to claim 4, is characterized in that the electrode zone on P, N semiconductor layer of the epitaxial loayer of described semiconductor luminous chip is electrically connected through conductive contact and electric conductor respectively.
6. light emitting semiconductor device according to claim 1, is characterized in that the material of the substrate of described transparent base or described semiconductor luminous chip is at least selected from glass, sapphire, carborundum or organic transparent body.
7. light emitting semiconductor device according to claim 1, is characterized in that described electric conductor comprises transparency conducting layer or metallic conductor, and the material of described transparency conducting layer is at least selected from tin indium oxide, zinc oxide, Graphene or carbon nano-tube.
8. light emitting semiconductor device according to claim 1, is characterized in that described semiconductor luminous chip has triangular cross section and/or trapezoidal longitudinal cross section.
9. light emitting semiconductor device according to claim 1, is characterized in that described light emitting semiconductor device also comprises at least in order to wrap up the encapsulated layer of arbitrary semiconductor luminous chip, and in described and/or top layer is distributed with fluorescent material.
10. light emitting semiconductor device according to claim 1, characterized by further comprising the encapsulated layer in order to light emitting semiconductor device described in overall package, and in described encapsulated layer and/or top layer is distributed with fluorescent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410203893.XA CN105098021A (en) | 2014-05-15 | 2014-05-15 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410203893.XA CN105098021A (en) | 2014-05-15 | 2014-05-15 | Semiconductor light emitting device |
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| CN105098021A true CN105098021A (en) | 2015-11-25 |
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| CN201410203893.XA Pending CN105098021A (en) | 2014-05-15 | 2014-05-15 | Semiconductor light emitting device |
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| JP2002270901A (en) * | 2001-03-12 | 2002-09-20 | Citizen Electronics Co Ltd | Light emitting diode and its manufacturing method |
| CN1812093A (en) * | 2004-12-21 | 2006-08-02 | 夏普株式会社 | Light-emitting diode, backlight device and method of manufacturing the light-emitting diode |
| CN101467272A (en) * | 2006-06-13 | 2009-06-24 | 昭和电工株式会社 | Gallium nitride compound semiconductor light emitting element |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
| CN102142495A (en) * | 2011-02-25 | 2011-08-03 | 聚灿光电科技(苏州)有限公司 | LED (light emitting diode) chip |
| CN202167538U (en) * | 2011-06-07 | 2012-03-14 | 隆达电子股份有限公司 | Packaging structure |
| CN103474559A (en) * | 2013-09-02 | 2013-12-25 | 四川柏狮光电技术有限公司 | Fluorescent plate and preparation method thereof |
| CN103733093A (en) * | 2011-08-12 | 2014-04-16 | 西铁城电子株式会社 | Lens member and light-emitting device using same |
| CN204118112U (en) * | 2014-05-15 | 2015-01-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Light emitting semiconductor device |
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2014
- 2014-05-15 CN CN201410203893.XA patent/CN105098021A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270901A (en) * | 2001-03-12 | 2002-09-20 | Citizen Electronics Co Ltd | Light emitting diode and its manufacturing method |
| CN1812093A (en) * | 2004-12-21 | 2006-08-02 | 夏普株式会社 | Light-emitting diode, backlight device and method of manufacturing the light-emitting diode |
| CN101467272A (en) * | 2006-06-13 | 2009-06-24 | 昭和电工株式会社 | Gallium nitride compound semiconductor light emitting element |
| CN101859858A (en) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conducting electrode based on graphene and manufacture method and applications thereof |
| CN102142495A (en) * | 2011-02-25 | 2011-08-03 | 聚灿光电科技(苏州)有限公司 | LED (light emitting diode) chip |
| CN202167538U (en) * | 2011-06-07 | 2012-03-14 | 隆达电子股份有限公司 | Packaging structure |
| CN103733093A (en) * | 2011-08-12 | 2014-04-16 | 西铁城电子株式会社 | Lens member and light-emitting device using same |
| CN103474559A (en) * | 2013-09-02 | 2013-12-25 | 四川柏狮光电技术有限公司 | Fluorescent plate and preparation method thereof |
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Application publication date: 20151125 |
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