CN105098020A

CN105098020A - LED light-emitting device

Info

Publication number: CN105098020A
Application number: CN201410201871.XA
Authority: CN
Inventors: 梁秉文; 张涛; 金忠良
Original assignee: Suzhou Institute of Nano Tech and Nano Bionics of CAS
Current assignee: Suzhou Institute of Nano Tech and Nano Bionics of CAS
Priority date: 2014-05-14
Filing date: 2014-05-14
Publication date: 2015-11-25
Anticipated expiration: 2034-05-14
Also published as: CN105098020B

Abstract

The application discloses an LED light emitting device comprising a substrate. The substrate has opposing upper and lower surfaces. The upper surface is provided with a plurality of grooves, each of which is provided with a flip LED chip. The bottom of each groove is provided with two through holes. The side walls of the through holes are provided with electrode contact members. The lower surface of the substrate is provided with a conductive layer. The conductive layer is electrically connected to the electrode contact members. Two electrodes of each LED chip are respectively inserted into the corresponding two through holes. The LED chips are connected in series and/or in parallel through the conductive layer. According to the invention, the LED chips are connected to the substrate through inserted connection, the operation is easy, mass production is facilitated, and the efficiency of mass production is improved.

Description

LED

Technical field

The application relates to a kind of light emitting semiconductor device, particularly relates to a kind of LED.

Background technology

Last century, the sixties, first LED product was born in the U.S., and its appearance brings a lot of brilliance to the life of people, and have the advantages such as life-span length, low-power consumption, environmental protection due to LED, associated technical development obtains very fast.The photoelectric device that it becomes " ubiquitous " and our life is closely bound up and light source, the backlight of such as mobile phone, traffic lights, large-screen full color display and view brightening lamp etc.

Along with the rise that the breakthrough of adulterating with GaN (gallium nitride) material P type is the third generation semi-conducting material of starting point, along with the high brightness light emitting diode (LightEmittingDiode based on III group-III nitride, LED) technological break-through, the nitride LED for new generation of green environmental protection solid light source is becoming new study hotspot.At present, the continuous upgrading of LED application and market, for the demand of LED, make LED just towards high-power and future development that is high brightness.Wherein one of study hotspot is high voltage direct current LED technology, and it adopts multiple chips to form a total light-emitting diodes form of tubes, i.e. plurality of LEDs series connection formation LED.

Current high-voltage LED technology belongs to emerging technology category, and there are the following problems for its technology:

The light extraction efficiency of LED chip has to be hoisted, use in theory the luminous efficiency of blue LED excited yellow fluorescent material synthesize white light up to every watt 300 multithread bright, but present actual efficiency is less than the half of theoretical value, about 1/3rd of theoretical value that the chances are, one of them major reason is that the light that a part sends from active region cannot escape out from LED chip inside.Metal electrode, chip material itself and base material are to the absorption of light and to block the loss that LED light is imitated very large.

Existing LED chip is usually connected with base material by modes such as welding or is carried out connection in series-parallel, and this connected mode cost is high, and is unfavorable for batch production.

Summary of the invention

The object of the present invention is to provide a kind of LED, solve the technical problem that LED chip light extraction efficiency in prior art is low, be unfavorable for batch production.

For achieving the above object, the invention provides following technical scheme:

This application discloses a kind of LED, comprise base material and the LED chip of upside-down mounting on described base material, described base material has relative upper surface and lower surface, described upper surface offers the groove holding described LED chip, the bottom of described groove offers two through holes, the sidewall of described through hole is provided with electrode contact, the lower surface of described base material is provided with conductive layer, described conductive layer is electrically connected at described electrode contact, and two electrodes of described LED chip are inserted in described two through holes respectively.

Preferably, in above-mentioned LED, it is domatic that the edge of opening of described groove is provided with guiding.

Preferably, in above-mentioned LED, described base material is transparent base, and described conductive layer is transparency conducting layer, and described LED chip comprises transparent substrates and is formed at the epitaxial loayer in transparent substrates.

Preferably, in above-mentioned LED, the material of described base material and transparent substrates is selected from glass, sapphire, carborundum or organic transparent body, and the material of described conductive layer is selected from tin indium oxide, zinc oxide, carbon nano-tube or Graphene.

Preferably, in above-mentioned LED, the end of two electrodes of described LED chip is positioned at sustained height.

Disclosed herein as well is a kind of LED, comprise base material, described base material has relative upper surface and lower surface, described upper surface offers multiple groove, in described each groove, upside-down mounting is provided with a LED chip respectively, the bottom of described each groove offers two through holes, the sidewall of described through hole is provided with electrode contact, the lower surface of described base material is provided with conductive layer, described conductive layer is electrically connected at described electrode contact, two electrodes of described LED chip are inserted in described two through holes respectively, described LED chip is connected by described conductive layer and/or parallel connection.

Compared with prior art, the invention has the advantages that:

(1), in LED of the present invention, the material of LED chip substrate, base material, conductive layer all adopts transparent material, avoids the stop of substrate, base material and electrode pair bright dipping, achieves the bright dipping of space full angle, improve overall light extraction efficiency;

(2), LED chip is connected with base material by plugging mode, easy to operate, is easy to produce in enormous quantities, improves the efficiency produced in enormous quantities.

(3), each LED chip is installed in a groove respectively, LED chip can be separated, not easily adhesion between electrode.

Accompanying drawing explanation

In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.

Figure 1 shows that the structural representation of LED in the specific embodiment of the invention.

Embodiment

For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.The example of these preferred implementations illustrates in the accompanying drawings.Shown in accompanying drawing and the embodiments of the present invention described with reference to the accompanying drawings be only exemplary, and the present invention is not limited to these execution modes.

At this, also it should be noted that, in order to avoid the present invention fuzzy because of unnecessary details, illustrate only in the accompanying drawings with according to the closely-related structure of the solution of the present invention and/or treatment step, and eliminate other details little with relation of the present invention.

Shown in ginseng Fig. 1, LED comprises base material 1, and base material 1 is preferably transparent base material, and its material is selected from clear glass, sapphire, carborundum or organic transparent body, and organic transparent body comprises PC(Merlon), PMMA(polymethyl methacrylate) etc.Preferably, the material of transparent base 1 is glass that is cheap and that easily obtain.

Base material 1 has relative upper surface and lower surface, its upper surface offers in multiple groove 2(figure for 2), the bottom of each groove offers two through holes, and the edge of opening of each groove 2 is provided with guiding domatic 5.

By to electroplate or the means such as sputtering are formed with electrode contact 6 on the sidewall of through hole, the material of electrode contact 6 is preferably metal.

In each groove 2, upside-down mounting has a LED chip 3 respectively, and LED chip 3 comprises transparent substrates and is formed at the epitaxial loayer in transparent substrates, and the material of transparent substrates is selected from clear glass, sapphire, carborundum or organic transparent body.

The end of two electrodes of LED chip 3 is positioned at sustained height, and these two electrodes are inserted in two corresponding through holes respectively, and in electrical contact with electrode contact 6.The shape of the electrode of LED chip 3 is preferably cylinder.

The lower surface of base material is formed with conductive layer 4, conductive layer 4 and electrode contact 6 are electrically connected, and the series connection realized between LED chip and/or parallel connection.Conductive layer 4 is preferably transparency conducting layer, and its material is selected from tin indium oxide, zinc oxide, carbon nano-tube or Graphene.

LED chip directly by series connection and/or parallel way upside-down mounting over the transparent substrate, without the need to arranging transfer base substrate separately, and ensure that LED has normal service behaviour, particularly when connection in series-parallel is combined, existing LED can be reduced due to metal bonding wire and connect the failure rate produced.And, after all LED chips in a LED are all incorporated in a current circuit, only need to arrange the general supply access interface coordinated with this current circuit in the devices, and be connected with power supply with this general supply access interface, thus make devices function, so can simplify the structure of LED, its production cost of further reduction, simplifies its production technology, makes its easily standardization making in enormous quantities, aforementioned general supply port can adopt all kinds of forms known to industry, such as grafting port.

This LED also can be enclosed with encapsulated layer, encapsulated layer can be made up of organic silica gel or epoxy resin etc., wherein can Uniform Doped, be coated with fluorescent material etc., to realize the radiative wavelength convert of LED chip, and by this kind of packing forms, the light that also device can be made to launch has better uniformity.And the type of described fluorescent material can be chosen according to the demand of practical application, its acquiring way also can have multiple, such as, can derive from commercially available approach.The amount of light of LED chip can be increased by organic silica gel or epoxy resin on the one hand, the decay of fluorescent material can also be avoided on the other hand, increase the useful life of fluorescent material.

Be easy to it is contemplated that base material only can also arrange a groove, thus form an independently LED light-emitting component.

In sum, the advantage of LED of the present invention is:

(4), that the opening part of each groove is provided with guiding is domatic, can LED chip guiding be entered in groove exactly.

Finally, also it should be noted that, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.

Claims

1. a LED, it is characterized in that, comprise base material and the LED chip of upside-down mounting on described base material, described base material has relative upper surface and lower surface, described upper surface offers the groove holding described LED chip, the bottom of described groove offers two through holes, the sidewall of described through hole is provided with electrode contact, the lower surface of described base material is provided with conductive layer, described conductive layer is electrically connected at described electrode contact, and two electrodes of described LED chip are inserted in described two through holes respectively.

2. LED according to claim 1, is characterized in that: it is domatic that the edge of opening of described groove is provided with guiding.

3. LED according to claim 1, is characterized in that: described base material is transparent base, and described conductive layer is transparency conducting layer, and described LED chip comprises transparent substrates and is formed at the epitaxial loayer in transparent substrates.

4. LED according to claim 3, it is characterized in that: the material of described base material and transparent substrates is selected from glass, sapphire, carborundum or organic transparent body, and the material of described conductive layer is selected from tin indium oxide, zinc oxide, carbon nano-tube or Graphene.

5. LED according to claim 1, is characterized in that: the end of two electrodes of described LED chip is positioned at sustained height.

6. a LED, it is characterized in that, comprise base material, described base material has relative upper surface and lower surface, described upper surface offers multiple groove, in described each groove, upside-down mounting is provided with a LED chip respectively, the bottom of described each groove offers two through holes, the sidewall of described through hole is provided with electrode contact, the lower surface of described base material is provided with conductive layer, described conductive layer is electrically connected at described electrode contact, two electrodes of described LED chip are inserted in described two through holes respectively, described LED chip is connected by described conductive layer and/or parallel connection.

7. LED according to claim 6, is characterized in that: it is domatic that the edge of opening of described groove is provided with guiding.

8. LED according to claim 6, is characterized in that: described base material is transparent base, and described conductive layer is transparency conducting layer, and described LED chip comprises transparent substrates and is formed at the epitaxial loayer in transparent substrates.

9. LED according to claim 8, it is characterized in that: the material of described base material and transparent substrates is selected from glass, sapphire, carborundum or organic transparent body, and the material of described conductive layer is selected from tin indium oxide, zinc oxide, carbon nano-tube or Graphene.

10. LED according to claim 6, is characterized in that: the end of two electrodes of described LED chip is positioned at sustained height.