CN104183665B - The preparation method of the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions - Google Patents
The preparation method of the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions Download PDFInfo
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 239000002070 nanowire Substances 0.000 title claims abstract description 80
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 11
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 235000012149 noodles Nutrition 0.000 claims description 6
- 229910052946 acanthite Inorganic materials 0.000 claims description 5
- 150000001336 alkenes Chemical class 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 claims description 4
- 235000012054 meals Nutrition 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 10
- 229910052573 porcelain Inorganic materials 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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Abstract
The invention discloses a kind of preparation method of the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions, it is characterized in that the first method synthetic preparation p-type ZnSe nano wire in the tube furnace of three-temperature-zone by thermal evaporation, n-type heavy doping Si sheet is carried out to pretreatment, with tweezers, the p-type ZnSe nano wire of preparing gained is taken off in the form of sheets, the sheet p-type ZnSe nano wire of taking off is laid on heavy doping Si sheet for subsequent use again; Described sheet p-type ZnSe nano wire is not more than the area of heavy doping Si sheet for subsequent use; Finally put down auxiliary insulating barrier in the surrounding of sheet p-type ZnSe nano wire, then in sheet p-type ZnSe nano wire upper berth Graphene electrodes, so that between photosensitive layer and Graphene electrodes, be Ohmic contact, and be insulation between n-type doping Si sheet and Graphene electrodes. The present invention can effectively strengthen the signal of telecommunication of nano photodetectors, improves its on-off ratio, increases photodetector photosensitive layer area.
Description
The application is application number: 201210243428X, the applying date: on July 13rd, 2012, denomination of invention: based on p-typePhotodetector of ZnSe nano wire/n-type Si hetero-junctions and preparation method thereof, applicant: the divisional application of HeFei University of Technology.
Technical field
The present invention relates to a kind of preparation method of nano photodetectors, more specifically say a kind of based on p-type ZnSe nano wire/n-The preparation method of the nano photodetectors of type Si hetero-junctions.
Background technology
Photoelectric detector can be converted to the signal of telecommunication by the optical signal sensing, has important Military value and wide civilianMarket. Nano photodetectors is to adopt nano material as the photodetector of photosensitive layer, its have be easy to integrated, low-power consumption,Feature cheaply. What is more important, compared with the film photoelectric detector of nano photodetectors and material of the same race, has moreHigh sensitivity and reaction speed.
ZnSe is important II-VI family semi-conducting material, and room temperature energy gap is 2.7eV, very responsive for blue green light. ButExisting ZnSe nano-photoelectric detector be by ZnSe nano wire by the method random arrangement that scratches in dielectric substrate, then logicalCross complicated photoetching, plated electrode process and realize, complex process and unstable properties. The ZnSe nano-photoelectric detector completingThere is the signal of telecommunication, on-off ratio and the little problem of photosensitive layer area more. Si plays leading role in modern semiconductors industry, butThat tape splicing gap structure has limited its optoelectronic applications therebetween.
Summary of the invention
The present invention is for avoiding the existing weak point of above-mentioned prior art, provides a kind of based on p-type ZnSe nano wire/n-typeThe preparation method of the photodetector of Si hetero-junctions, to effectively strengthening the signal of telecommunication of nano photodetectors, improves its on-off ratio,Increase photodetector photosensitive layer area.
Technical solution problem of the present invention adopts following technical scheme:
The version that the present invention is based on the photodetector of p-type ZnSe nano wire/n-type Si hetero-junctions is described photodetectorStructure sheaf be followed successively by from bottom to top: n-type doping Si sheet, photosensitive layer and Graphene electrodes, described photosensitive layer is p-type ZnSeNano wire, is Ohmic contact between described photosensitive layer and Graphene electrodes, in the periphery of described photosensitive layer, be positioned at n-type doping SiBetween sheet and Graphene electrodes, be provided with insulating barrier, carry out absolutely between n-type doping Si sheet and Graphene electrodes with described insulating barrierEdge.
The feature that the present invention is based on the preparation method of the photodetector of p-type ZnSe nano wire/n-type Si hetero-junctions is by following mistakeCheng Jinhang:
A, method synthetic preparation p-type ZnSe nano wire in the tube furnace of three-temperature-zone by thermal evaporation:
Adopting quality purity to be not less than 99.9% ZnSe powder is raw material, has the silicon chip of 10nm gold as substrate using evaporation,Tube furnace is taking temperature as 1050 DEG C, and air pressure is that the reaction condition of 100 holders keeps two hours; For n doped ZnS e nano wire,Continue to pass into NH in the maintenance stage3Gas, gas flow is constant is 15sccm; For p doped ZnS e nano wire, keepingStage continues to pass into PH5Gas, gas flow is constant is 12sccm; In the time that naturally cooling to room temperature, furnace chamber temperature takes out sample,The velvet-like product of one deck yellowish-brown depositing in silicon chip substrate is the p-type ZnSe nano wire of preparing gained;
B, the pretreatment of n-type heavy doping Si sheet
N-type heavy doping Si sheet is placed in to the hydrofluoric acid solution etching 2-3 minute that mass concentration is 5%-10%, removes n-type weightThe thin oxide layer on doped silicon wafer surface, then ultrasonic cleaning is also dried and obtains pretreated heavy doping Si sheet for subsequent use;
C, take off in the form of sheets with the p-type ZnSe nano wire that step a is prepared gained by tweezers, the sheet p-type ZnSe taking off receivesRice noodles are laid on heavy doping Si sheet for subsequent use; Described sheet p-type ZnSe nano wire is not more than the area of heavy doping Si sheet for subsequent use;
D, at the flat auxiliary insulating barrier of the surrounding of described sheet p-type ZnSe nano wire, then at sheet p-type ZnSe nano wire upper berth stoneChina ink alkene electrode, so that between described photosensitive layer and Graphene electrodes, be Ohmic contact, and at n-type doping Si sheet and GrapheneIt between electrode, is insulation.
The feature that the present invention is based on the preparation method of the photodetector of p-type ZnSe nano wire/n-type Si hetero-junctions is also:
Described n-type doping Si sheet adopts the n-type heavy doping Si sheet that resistivity is 0.005～0.02 Ω/cm.
The doped chemical of described p-type ZnSe nano wire is any one in N, Ag, P and Bi, and doping content is 1%-50%Atomic percentage conc, doped source adopts respectively ammonia, Ag2S powder, gaseous state phosphine and bismuth meal.
Described Graphene electrodes adopts graphene film.
Compared with the prior art, beneficial effect of the present invention is embodied in:
1, the present invention adopts p-type ZnSe nano wire as photosensitive layer, and doping can effectively improve the dense of carrier in ZnSe nano wireDegree, improves ZnSe nano wire and contacts with interelectrode, optimizes p-type ZnSe nano wire/n-type Si hetero-junctions performance, significantly improves electricitySignal and raising on-off ratio.
2, the present invention adopts the method that directly becomes piece to peel off nano wire with tweezers, transferred on n-type heavy doping Si substrate,Method is simple and can effectively improve detector performance by modulation nano wire area.
3, the present invention adopts the electrode of Graphene as p-type ZnSe nano wire, without complicated photoetching, electrode evaporation process andConduct electricity very well.
Brief description of the drawings
Fig. 1 is the top view that the present invention is based on the photodetector of p-type ZnSe nano wire/n-type Si hetero-junctions;
Fig. 2 a is the embodiment of the present invention 1 synthesized p-type ZnSe nano wire scanning electron microscope diagram, and illustration is X-ray energy spectrum;
Fig. 2 b is the X-ray diffractogram of the embodiment of the present invention 1 synthesized p-type ZnSe nano wire;
Fig. 3 is p-type ZnSe nano wire/n-type Si hetero-junctions typical case I-V curve map prepared by the embodiment of the present invention 1;
Fig. 4 be the embodiment of the present invention 1 prepare based on p-type ZnSe nano wire/n-type Si hetero-junctions in reverse biased during for-5VThe collection of illustrative plates of photoresponse;
Fig. 5 be the embodiment of the present invention 2 prepare based on p-type ZnSe nano wire/n-type Si hetero-junctions in reverse biased during for-5VThe collection of illustrative plates of photoresponse.
Detailed description of the invention
Referring to Fig. 1, in concrete enforcement, the structure sheaf of the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions certainlyLower and on be followed successively by: n-type doping Si sheet 4, photosensitive layer 3 and Graphene electrodes 1, photosensitive layer 3 adopts p-type ZnSe nano wire,Between photosensitive layer 3 and Graphene electrodes 1, be Ohmic contact, in the periphery of photosensitive layer 3, be positioned at n-type doping Si sheet 4 and graphiteBetween alkene electrode 1, be provided with insulating barrier 2, insulate between n-type doping Si sheet 4 and Graphene electrodes 1 with insulating barrier 2.
In concrete enforcement, it is the n-type heavy doping Si sheet of 0.005～0.02 Ω/cm that n-type doping Si sheet 4 adopts resistivity; P-typeThe doped chemical of ZnSe nano wire is any one in N, Ag, P and Bi, and doping content is 1%-50% atomic percentage conc,Doped source adopts respectively ammonia, Ag2S powder, gaseous state phosphine and bismuth meal; Graphene electrodes 1 adopts graphene film.
Preparation process:
A, method synthetic preparation p-type ZnSe nano wire in the tube furnace of three-temperature-zone by thermal evaporation:
Adopting quality purity to be not less than 99.9% ZnSe powder is raw material, gets described raw material ZnSe powder 0.25g and workFor the purity of doped source is not less than 99.9% Ag2S powder 0.05g, or purity is not less than 99.9% bismuth meal 0.05g and fully grindsAfter put into aluminium oxide porcelain boat, have the silicon chip of 10nm gold as substrate using evaporation, aluminium oxide porcelain boat and substrate are put into quartz ampouleAnd quartz ampoule is shifted in tube furnace, described tube furnace is taking temperature as 1050 DEG C, and air pressure is that the reaction condition of 100 holders keeps twoIndividual hour finishes reaction, takes out sample, one deck yellowish-brown suede depositing in silicon chip substrate in the time that furnace chamber temperature naturally cools to room temperatureShape product is the p-type ZnSe nano wire of preparing gained;
Or: adopting quality purity to be not less than 99.9% ZnSe powder is raw material, has the silicon chip of 10nm gold as lining using evaporationThe end,, tube furnace is taking temperature as 1050 DEG C, and air pressure is that the reaction condition of 100 holders keeps two hours; For n doped ZnS, e receivesRice noodles, continue to pass into NH in the maintenance stage3Gas, gas flow is constant is 15sccm; For p doped ZnS e nano wire,Continue to pass into PH in the maintenance stage5Gas, gas flow is constant is 12sccm; In the time that naturally cooling to room temperature, furnace chamber temperature takes outSample, the velvet-like product of one deck yellowish-brown depositing in silicon chip substrate is the p-type ZnSe nano wire of preparing gained;
B, the pretreatment of n-type heavy doping Si sheet
N-type heavy doping Si sheet is placed in to the hydrofluoric acid solution etching 2-3 minute that mass concentration is 5%-10%, removes n-type weightThe thin oxide layer on doped silicon wafer surface, then ultrasonic cleaning is also dried and obtains pretreated heavy doping Si sheet for subsequent use;
C, take off in the form of sheets with the p-type ZnSe nano wire that step a is prepared gained by tweezers, the sheet p-type ZnSe taking off receivesRice noodles are laid on heavy doping Si sheet for subsequent use; Sheet p-type ZnSe nano wire is not more than the area of heavy doping Si sheet for subsequent use;
D, at the flat auxiliary insulating barrier of the surrounding of sheet p-type ZnSe nano wire, then at sheet p-type ZnSe nano wire upper berth GrapheneElectrode 1, so that be Ohmic contact between photosensitive layer 3 and Graphene electrodes 1, and at n-type doping Si sheet 4 and GrapheneIt between electrode 1, is insulation.
Embodiment 1:
A, preparation p-type ZnSe nano wire
P-type ZnSe nano wire is synthetic in the tube furnace of three-temperature-zone by the method for thermal evaporation, and the present embodiment adopts Ag conductDoped chemical.
First quality purity is not less than to 99.9% ZnSe powder 0.25g and quality purity and is not less than 99.9% Ag2S powder0.05g puts into after fully grinding in aluminium oxide porcelain boat, the silicon chip as substrate is cleaned up with alcohol and acetone, and use electron beamOn substrate, evaporation 10nm gold is as catalyst. Then aluminium oxide porcelain boat and substrate are put in tube furnace, substrate is positioned at oxygenChange 10cm place, aluminium porcelain boat downstream.
Tube furnace is evacuated to 10-3Pascal, then, to furnace chamber heating one and a half hours, makes temperature reach 1050 DEG C, keepsThis temperature is off-response program after 2 hours, continues to pass into the argon hydrogen mixture of 50sccm, by volume in whole processArgon gas: hydrogen is 95: 5, and furnace chamber invariablenes pressure of liquid is at 100Torr. In the time of tube furnace temperature cool to room temperature, take out sample and can seeTo substrate, deposit the velvet-like product of one deck yellowish-brown, be p-type ZnSe nano wire;
B, the pretreatment of n-type heavy doping Si sheet
N-type heavy doping Si sheet is placed in to the hydrofluoric acid solution etching 2-3 minute that mass concentration is 5%-10%, removes n-type weightThe thin oxide layer on doped silicon wafer surface, then ultrasonic cleaning is also dried and obtains pretreated heavy doping Si sheet for subsequent use;
C, take off in the form of sheets with the p-type ZnSe nano wire that step a is prepared gained by tweezers, the sheet p-type ZnSe taking off receivesRice noodles are laid on heavy doping Si sheet for subsequent use; Described sheet p-type ZnSe nano wire is not more than the area of heavy doping Si sheet for subsequent use;
D, at the flat auxiliary insulating barrier of the surrounding of sheet p-type ZnSe nano wire, then at sheet p-type ZnSe nano wire upper berth GrapheneElectrode 1, so that be Ohmic contact between described photosensitive layer 3 and Graphene electrodes 1, and at n-type doping Si sheet 4 and stoneBetween China ink alkene electrode 1, it is insulation.
Photodetector schematic diagram based on p-type ZnSe nano wire/n-type Si hetero-junctions prepared by the present embodiment as shown in Figure 1.The scanning electron microscope diagram of the Ag doping p-type ZnSe nano wire of synthesized, X-ray energy spectrum figure, X-ray diffractogram are as figureShown in 2. Figure 3 shows that the performance test of p-type ZnSe nano wire/n-type Si hetero-junctions, wherein illustration is its semilog coordinate.Therefrom can find out that prepared hetero-junctions has higher rectification characteristic, voltage reaches 10 in-5V～5V commutating ratio3, cut-in voltageFor 0.5V, and can find out that electric current obviously rises under illumination, on-off ratio approximately 1.2 × 10 from the contrast of light and shade current curve3；Fig. 4 is that heterojunction photoelectric detector is-collection of illustrative plates of photoresponse when 5V in reverse biased, as can be seen from the figure this hetero-junctionsDetector has higher response speed. Have under irradiation, electric current can rise rapidly, removes incident light, and photoelectric current rapidly disappears,The on-off ratio of light dark current reaches 103Left and right, this high response speed has well for the high performance photodetector of preparationUse value.
Embodiment 2:
A, preparation p-type ZnSe nano wire
P-type ZnSe nano wire is synthetic in the tube furnace of three-temperature-zone by the method for thermal evaporation, and the present embodiment adopts P as mixingAssorted element.
First quality purity is not less than after 99.9% ZnSe powder 0.25g fully grinds and puts in aluminium oxide porcelain boat, using asThe silicon chip of substrate cleans up with alcohol and acetone, and with electron beam on substrate evaporation 10nm gold as catalyst. ThenAluminium oxide porcelain boat and substrate are put in tube furnace, and substrate is positioned at 10cm place, aluminium oxide porcelain boat downstream.
Tube furnace is evacuated to 10-3Pascal, then heats one and a half hours furnace chamber, makes temperature reach 1050 DEG C,Keep this temperature off-response program after 2 hours, in whole process, continue to pass into the argon hydrogen mixture of 50sccm (by volumeThan argon gas: hydrogen is 95: 5) with the phosphine of 10sccm, keep furnace chamber pressure at 100Torr. Treat that tube furnace temperature is cooled to chamberWen Shi, takes out sample and can see and on substrate, deposited the velvet-like product of one deck yellowish-brown, i.e. p-type ZnSe nano wire;
B, the pretreatment of n-type heavy doping Si sheet
N-type heavy doping Si sheet is placed in to the hydrofluoric acid solution etching 2-3 minute that mass concentration is 5%-10%, removes n-type weightThe thin oxide layer on doped silicon wafer surface, then ultrasonic cleaning is also dried and obtains pretreated heavy doping Si sheet for subsequent use;
C, take off in the form of sheets with the p-type ZnSe nano wire that step a is prepared gained by tweezers, the sheet p-type ZnSe taking off receivesRice noodles are laid on heavy doping Si sheet for subsequent use; Described sheet p-type ZnSe nano wire is not more than the area of heavy doping Si sheet for subsequent use;
D, at the flat auxiliary insulating barrier of the surrounding of described sheet p-type ZnSe nano wire, then at sheet p-type ZnSe nano wire upper berth stoneChina ink alkene electrode 1, so that be Ohmic contact between described photosensitive layer 3 and Graphene electrodes 1, and at n-type doping Si sheet 4And between Graphene electrodes 1, be insulation.
See Fig. 5 through preparing the nano photodetectors photoresponse collection of illustrative plates of gained based on p-type ZnSe nano wire/n-type Si hetero-junctions. ExplanationDopant material kind is less for device performance impact.
Claims (4)
1. a preparation method for the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions, described photodetectorStructure sheaf be followed successively by from bottom to top: n-type doping Si sheet (4), photosensitive layer (3) and Graphene electrodes (1), described photosensitive layer (3) isP-type ZnSe nano wire, is Ohmic contact between described photosensitive layer (3) and Graphene electrodes (1), in the periphery of described photosensitive layer (3),Be positioned between n-type doping Si sheet (4) and Graphene electrodes (1) and be provided with insulating barrier (2), with described insulating barrier (2) at the n-type Si that adulteratesBetween sheet (4) and Graphene electrodes (1), insulate, it is characterized in that described photodetector is to prepare according to the following procedure:
A, method synthetic preparation p-type ZnSe nano wire in the tube furnace of three-temperature-zone by thermal evaporation:
Adopting quality purity to be not less than 99.9% ZnSe powder is raw material, has the silicon chip of 10nm gold as substrate using evaporation,Tube furnace is taking temperature as 1050 DEG C, and air pressure is that the reaction condition of 100 holders keeps two hours; For n doped ZnS e nano wire,Continue to pass into NH in the maintenance stage3Gas, gas flow is constant is 15sccm; For p doped ZnS e nano wire, keepingStage continues to pass into PH5Gas, gas flow is constant is 12sccm; In the time that naturally cooling to room temperature, furnace chamber temperature takes out sample,The velvet-like product of one deck yellowish-brown depositing in silicon chip substrate is the p-type ZnSe nano wire of preparing gained;
B, the pretreatment of n-type heavy doping Si sheet
N-type heavy doping Si sheet is placed in to the hydrofluoric acid solution etching 2-3 minute that mass concentration is 5%-10%, removes n-type weightThe thin oxide layer on doped silicon wafer surface, then ultrasonic cleaning is also dried and obtains pretreated heavy doping Si sheet for subsequent use;
C, take off in the form of sheets with the p-type ZnSe nano wire that step a is prepared gained by tweezers, the sheet p-type ZnSe taking off receivesRice noodles are laid on heavy doping Si sheet for subsequent use; Described sheet p-type ZnSe nano wire is not more than the area of heavy doping Si sheet for subsequent use;
D, at the flat auxiliary insulating barrier of the surrounding of described sheet p-type ZnSe nano wire, then at sheet p-type ZnSe nano wire upper berth stoneChina ink alkene electrode (1), so that be Ohmic contact between described photosensitive layer (3) and Graphene electrodes (1), and at n-type doping Si sheet(4) be insulation and between Graphene electrodes (1).
2. the preparation method of the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions according to claim 1,It is characterized in that described n-type doping Si sheet (4) adopts the n-type heavy doping Si sheet that resistivity is 0.005～0.02 Ω/cm.
3. the preparation method of the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions according to claim 1,The doped chemical that it is characterized in that described p-type ZnSe nano wire is any one in N, Ag, P and Bi, and doping content is1%-50% atomic percentage conc, doped source adopts respectively ammonia, Ag2S powder, gaseous state phosphine and bismuth meal.
4. the preparation method of the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions according to claim 1,It is characterized in that described Graphene electrodes (1) adopts graphene film.
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| CN103390590B (en) * | 2013-06-28 | 2015-07-01 | 合肥工业大学 | Storage manufacturing method based on P-type ZnSe/ N-type Si core shell nanowire heterojunction |
| CN103956402B (en) * | 2014-05-14 | 2016-03-30 | 合肥工业大学 | A kind of self-driven high speed schottky junction near infrared photodetector and preparation method thereof |
| CN104300027B (en) * | 2014-08-08 | 2016-11-09 | 浙江大学 | Avalanche photodetector based on graphene/silicon dioxide/silicon and preparation method |
| CN109256471A (en) * | 2018-12-10 | 2019-01-22 | 合肥工业大学 | A kind of unleaded full-inorganic perovskite caesium bismuth iodine film/n-type silicon heterojunction photoelectric detector and preparation method thereof |
| CN114000108B (en) * | 2021-10-30 | 2023-10-17 | 平顶山学院 | Preparation method for embedding CdSe regulating layer at ZnSe/Si heterojunction interface |
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