CN108767028A - Flexible solar blind ultraviolet detector and preparation method thereof based on gallium oxide heterojunction structure - Google Patents
Flexible solar blind ultraviolet detector and preparation method thereof based on gallium oxide heterojunction structure Download PDFInfo
- Publication number
- CN108767028A CN108767028A CN201810535388.3A CN201810535388A CN108767028A CN 108767028 A CN108767028 A CN 108767028A CN 201810535388 A CN201810535388 A CN 201810535388A CN 108767028 A CN108767028 A CN 108767028A
- Authority
- CN
- China
- Prior art keywords
- film
- hetero
- column array
- glass fabric
- fabric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 41
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 214
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000010408 film Substances 0.000 claims abstract description 73
- 239000011521 glass Substances 0.000 claims abstract description 69
- 239000004744 fabric Substances 0.000 claims abstract description 64
- 239000002061 nanopillar Substances 0.000 claims abstract description 29
- 239000012528 membrane Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 54
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 33
- 229910052733 gallium Inorganic materials 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 30
- 239000010931 gold Substances 0.000 claims description 29
- 150000002739 metals Chemical class 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 238000011065 in-situ storage Methods 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 235000019441 ethanol Nutrition 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims 1
- 238000000825 ultraviolet detection Methods 0.000 abstract description 4
- 239000004753 textile Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000002127 nanobelt Substances 0.000 description 2
- 239000002120 nanofilm Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- YKSIHFDRGQQOCJ-LHHMOHDTSA-N mycothione Chemical compound O([C@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1NC(=O)[C@@H](NC(C)=O)CSSC[C@H](NC(=O)C)C(=O)N[C@H]1[C@H](O[C@H](CO)[C@@H](O)[C@@H]1O)O[C@@H]1[C@@H]([C@H](O)[C@@H](O)[C@H](O)[C@H]1O)O)[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](O)[C@H]1O YKSIHFDRGQQOCJ-LHHMOHDTSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Catalysts (AREA)
- Light Receiving Elements (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a kind of flexible solar blind ultraviolet detector and preparation method thereof based on gallium oxide heterojunction structure, including glass fabric substrate, the α-Ga being set to above glass fabric substrate2O3Film is set to α-Ga2O3α-Ga above film2O3/β‑Ga2O3Hetero-junctions nano column array is set to α-Ga2O3/β‑Ga2O3α-the Ga in hetero-junctions nano column array gap2O3β-Ga above film2O3Film and Ti/Au membrane electrodes；α-the Ga2O3/β‑Ga2O3Hetero-junctions nano column array includes being distributed in α-Ga2O3α-Ga above film2O3Nano column array is coated on α-Ga2O3β-the Ga of nano-pillar periphery2O3Shell, α-Ga2O3Film and β-Ga2O3α-Ga are constituted between film2O3/β‑Ga2O3Hetero-junction thin-film layer；Ti/Au membrane electrodes are two, and one is set to α-Ga2O3/β‑Ga2O3Above hetero-junctions nano column array, another is set to α-Ga2O3Above film.The detector of the present invention is quick on the draw, and dark current is small, has the response of good ultraviolet light photo, has great application prospect in fields such as wearable device, UV detection and intelligent textiles.
Description
Technical field
The invention belongs to UV photodetector technical fields, and in particular to the flexible day based on gallium oxide heterojunction structure
Blind ultraviolet detector and preparation method thereof.
Technical background
Currently, the wide bandgap semiconductor ultraviolet detector based on SiC, GaN and ZnO all cannot achieve day blind detection, it is easy
It is interfered by sunlight, it is weaker to the processing capacity of weak signal, so that its application is restricted.And β-Ga2O3It is one kind to have deeply
The semi-conducting material of ultraviolet characteristic has day blind characteristic, can detect the ultraviolet light of 200-280nm, can be used for making blind type
Deep ultraviolet light electrical part, in high-voltage line corona detection, guidance, atmosphere quality monitoring, Ultraviolet Communication, hazard weather is pre-
Report, horizon communications field etc. is used widely.
The application of promotion with people to electronic equipment demand, wearable electronic is more and more extensive, and this kind of electricity
Sub- product needs flexible flexible device, improves the convenience of electronic equipment and the degree of freedom of design.Common ultraviolet light photo
Sensitive detection parts are all that semiconductive thin film, such as silicon chip, sapphire and quartz substrate etc. are grown in rigid substrate, these devices are all
It can not be bent, limit the application range of device.It, can not since current most flexible substrate is all macromolecule compound
Bear high temperature, therefore, select one kind can heat safe flexible substrate prepare gallium oxide material, so that it may to realize that gallium oxide day is blind
The flexible characteristic of ultraviolet detector.
Up to the present, few reports about flexible solar blind UV electric explorer, though have existing document report (in
State patent CN201710012296.2) the solar blind UV electric explorer based on flexible gallium oxide nanobelt, but such detection
Device is that the gallium oxide nanobelt that will be synthesized in advance is transferred in flexible substrates, has electrode fabrication difficulty big, stability is poor, with base
The shortcomings of bottom fitting is insecure.
Therefore, research and development designs different types of flexible optoelectronic detector, it is made to be widely used in different field,
Have great importance.
Invention content
The object of the present invention is to provide a kind of high sensitivity, stability is good, the response time is short, the flexibility with day blind characteristic
Solar blind ultraviolet detector and preparation method thereof.
In order to solve the above technical problem, the present invention provides technical solution be：Including glass fabric substrate, it is set to
α-Ga above glass fabric substrate2O3Film is set to α-Ga2O3α-Ga above film2O3/β-Ga2O3Hetero-junctions nanometer
Column array is set to α-Ga2O3/β-Ga2O3α-the Ga in hetero-junctions nano column array gap2O3β-Ga above film2O3Film,
And Ti/Au membrane electrodes；α-the Ga2O3/β-Ga2O3Hetero-junctions nano column array includes being distributed in α-Ga2O3Above film
α-Ga2O3Nano column array is coated on α-Ga2O3β-the Ga of nano-pillar periphery2O3Shell, α-Ga2O3Film and β-Ga2O3It is thin
α-Ga are constituted between film2O3/β-Ga2O3Hetero-junction thin-film layer；Ti/Au membrane electrodes are two, and one is set to α-Ga2O3/β-
Ga2O3Above hetero-junctions nano column array, another is set to α-Ga2O3Above film.
Specifically, the α-Ga2O3Film is located at glass fabric substrate and α-Ga2O3/β-Ga2O3Hetero-junctions nano-pillar battle array
Between row, α-Ga2O3/β-Ga2O3Hetero-junctions nano column array distribution area is less than α-Ga2O3Film size is set to α-Ga2O3
Ti/Au membrane electrodes above film and α-Ga2O3/β-Ga2O3Hetero-junctions nano column array is located at α-Ga2O3Film the same side.
Further, the α-Ga2O3The thickness of film is 0.5-1.0 μm；α-the Ga2O3/β-Ga2O3Hetero-junctions nanometer
A diameter of 100-200nm of column is highly 1.0-1.5 μm.
Specifically, self-catalysis agent of the gallium metal layer as growth gallium oxide nano-chip arrays, can promote nano column array
The formation of the gallium oxide of structure, and shorten the reaction time.
Preferably, the α-Ga2O3Film and α-Ga2O3Nano-pillar is structure as a whole.
Specifically, the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, detectable 200-280nm
Solar blind UV, it is flexible and fold, can be applied to the wearable UV detection equipment of portable.
The invention also includes the preparation method of the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, features
It is, includes the following steps：
Step 1 cleans glass fabric substrate, and cleaning process is as follows：Substrate is dipped into acetone, second successively
It each ultrasonic 10 minutes in alcohol, deionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
Glass fabric substrate is positioned over warm table by step 2, and the temperature that warm table is arranged is 100 DEG C, by a Ga
Metal is positioned over above glass fabric substrate, waits for that gallium metal melts, using glass slide that liquid Ga embossed metals is in blocks, cooling
Afterwards, it is for use to form Ga sheet metals/glass fabric substrate；
Step 3, Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga gold obtained by step 2
Belong to piece/glass fabric substrate to be fixed on sample carrier, puts vacuum chamber into；
Step 4 vacuumizes vacuum chamber cavity, is passed through argon gas, adjusts the pressure in vacuum chamber, then be passed through oxygen, heats
Ga sheet metals/glass fabric substrate, using magnetron sputtering method on the gallium drop on gallium metal piece surface growth in situ α-Ga2O3
Nano column array, and anneal, it then, is further continued for heating up, carries out quick in situ annealing, obtain α-Ga2O3/β-Ga2O3Hetero-junctions is received
Rice column array and α-Ga2O3/β-Ga2O3Hetero-junction thin-film layer, wherein Ga2O3Target is set at a distance from glass fabric substrate
It is set to 5 centimetres, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8-1.0Pa, is passed through
After oxygen, the pressure of vacuum chamber is adjusted to 103Pa；
Step 5, using mask plate and as radiofrequency magnetron sputtering technology in step 4 obtained by α-Ga2O3/β-Ga2O3It is different
Matter knot nano column array and α-Ga2O3Film one layer of Ti/Au membrane electrode of each disposed thereon, wherein sputtering technology condition：It takes out true
Empty rear chamber pressure is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 0.8-1.0Pa, sputtering
Power is 60-80W, sputtering time 2min.Specifically, Ga sheet metals/glass fabric substrate is heated in the step four
Temperature be 400-500 DEG C, sputtering power 60-80W, sputtering time be 1-1.5 hours.
Further, the temperature of short annealing is 700-800 DEG C after heating up in the step four, annealing time 10-
20 minutes.
Specifically, step 4 prepares α-Ga using magnetron sputtering method2O3/β-Ga2O3Gallium oxide hetero-junctions nano column array.
Under 400-500 DEG C of high-temperature heating, gallium metal film surface forms gallium metal drop, by magnetron sputtering in gallium metal drop
Upper growth α-Ga2O3Nano column array, meanwhile, slowly oxidation forms α-Ga to gallium metal layer under oxygen atmosphere2O3Film；Into one
Step is by being rapidly heated to 700-800 DEG C, α-Ga2O3The peripheral conversion of nano-pillar and film is β-Ga2O3, form α-Ga2O3/β-
Ga2O3Hetero-junctions nano column array.Wherein, gallium, which as self-catalysis agent can be catalyzed gallium metal layer and form gallium oxide at high temperature, receives
Rice material, slowly oxidation forms gallium oxide film to another aspect gallium metal layer, can be used as array growth substrate so that formation
Gallium oxide nano-pillar is orderly, is evenly distributed.
Beneficial effects of the present invention：
1, the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure of the invention, performance are stablized, are quick on the draw,
Dark current is small, has solar blind light electrical characteristics.Used α-Ga2O3/β-Ga2O3Hetero-junctions nano column array uniformly, orderly, is received
Rice column dimension is controllable.Using glass fabric flexible substrate so that the detector of formation is flexible, foldable, can be applied to just
The fields such as the prompt wearable UV detection of formula.
2, the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure of the invention, α-Ga2O3/β-Ga2O3It is heterogeneous
A diameter of 100-200nm of nano-pillar is tied, photoelectric properties are more preferably.
3, the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure of the invention, detectable 200-280nm's
Solar blind UV, flexible and folding, can apply UV detection equipment
4, it the present invention is based on the preparation method of the flexible solar blind ultraviolet detector of gallium oxide heterojunction structure, is splashed using magnetic control
Penetrate method fabricated in situ gallium oxide hetero-junctions nano column array, the α-Ga of preparation2O3/β-Ga2O3The method of hetero-junctions nano column array
It is controllable at low cost, technique, can large area prepare, be reproducible.
5, the present invention is based on the preparation methods of the flexible solar blind ultraviolet detector of gallium oxide heterojunction structure, by glass
It directly prepares to form gallium oxide film and gallium oxide nano column array in fiber cloth flexible substrate, the MSSM types Ti/ prepared
Au/α-Ga2O3/β-Ga2O3/ Ti/Au nano-array flexibility solar blind ultraviolet detector parts so that detector stability is high, with substrate
Fitting is secured；Preparation method has process controllability strong, easy to operate, thickness stable uniform, flexible.
Description of the drawings
Fig. 1 is the structural schematic diagram of the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure；
Fig. 2 is α-Ga2O3/β-Ga2O3The XRD spectrum of hetero-junctions nano column array；
Fig. 3 is α-Ga2O3/β-Ga2O3The SEM photograph of hetero-junctions nano column array；
It in -2V biass and light intensity is 50 μ W/ that Fig. 4, which is the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure,
cm2254nm and 365nm illumination under I-t curves.
Wherein：1- glass fabric substrates；2-α-Ga2O3Film；3-α-Ga2O3Nano-pillar；4-β-Ga2O3Shell；5-β-
Ga2O3Film；6-Ti/Au membrane electrodes；7-α-Ga2O3/β-Ga2O3Hetero-junctions nano column array.
Specific implementation mode
Clear, complete description is carried out to present disclosure below in conjunction with the accompanying drawings, it is clear that described embodiment is this
A part of the embodiment of invention, instead of all the embodiments.Occupy the embodiment in the present invention, those of ordinary skill in the art
The other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Embodiment 1
The preparation method of flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga sheet metals obtained by step 2)/
Glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4) cavity is vacuumized, is passed through argon gas, adjust the pressure in vacuum chamber, then be passed through oxygen, heating Ga sheet metals/
Glass fabric substrate, using magnetron sputtering method on the gallium drop on gallium metal piece surface growth in situ α-Ga2O3Nano-pillar battle array
Row, and anneal, it then, is further continued for heating up, carries out quick in situ annealing, obtain α-Ga2O3/β-Ga2O3Hetero-junctions nano-pillar battle array
Row and α-Ga2O3/β-Ga2O3Hetero-junction thin-film layer, wherein Ga2O3Target is set as 5 at a distance from glass fabric substrate
Centimetre, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 1.0Pa, after being passed through oxygen, very
The pressure of cavity is adjusted to 103Pa；It is 450 DEG C, sputtering power 80W to heat Ga sheet metals/glass fabric substrate temperature,
Sputtering time is 1 hour；The temperature of short annealing is 700 DEG C after heating, and annealing time is 10 minutes.
(5) utilize mask plate and as radiofrequency magnetron sputtering technology in step (4) obtained by α-Ga2O3/β-Ga2O3It is heterogeneous
Tie nano column array and α-Ga2O3Film one layer of Ti/Au membrane electrode of each disposed thereon, wherein sputtering technology condition：It vacuumizes
Rear chamber pressure is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 1.0Pa, and sputtering power is
80W, sputtering time 2min.
The flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure as shown in Fig. 1 structures is prepared, including
Glass fabric substrate is set to the α-Ga of 1 top of glass fabric substrate2O3Film 2 is set to α-Ga2O32 top of film
α-Ga2O3/β-Ga2O3Hetero-junctions nano column array 7 is set to α-Ga2O3/β-Ga2O37 gap of hetero-junctions nano column array
α-Ga2O3β-the Ga of 2 top of film2O3Film 3 and Ti/Au membrane electrodes 4；α-the Ga2O3/β-Ga2O3Hetero-junctions nanometer
Column array includes being distributed in α-Ga2O3α-the Ga of 2 top of film2O3Nano column array is coated on α-Ga2O33 periphery of nano-pillar
β-Ga2O3Shell 4, α-Ga2O3Film 2 and β-Ga2O3α-Ga are constituted between film 32O3/β-Ga2O3Hetero-junction thin-film layer；Ti/Au
Membrane electrode 6 is two, and one is set to α-Ga2O3/β-Ga2O37 top of hetero-junctions nano column array, another is set to α-
Ga2O32 top of film.
In the present embodiment, step (4) prepares α-Ga using magnetron sputtering method2O3/β-Ga2O3Gallium oxide hetero-junctions nano-pillar
Array.Under 450-500 DEG C of high-temperature heating, gallium metal film surface forms gallium metal drop, by magnetron sputtering in gallium gold
Belong to growth α-Ga on drop2O3Nano column array, meanwhile, slowly oxidation forms α-Ga to gallium metal layer under oxygen atmosphere2O3It is thin
Film；Further by being rapidly heated to 700-800 DEG C, α-Ga2O3The peripheral conversion of nano-pillar and film is β-Ga2O3, form α-
Ga2O3/β-Ga2O3Hetero-junctions nano column array.Wherein, gallium can be catalyzed gallium metal layer as self-catalysis agent and be formed at high temperature
Gallium oxide nano material, slowly oxidation forms gallium oxide film to another aspect gallium metal layer, can be used as array growth substrate, make
The gallium oxide nano-pillar that must be formed orderly, be evenly distributed.
Obtained sample carries out XRD analysis under being heated at 450 DEG C in step (4), find (104) in figure, (110),
(113), (116) and (300) diffraction maximum is α-Ga2O3The characteristic peak (Fig. 2) of phase, does not find the characteristic peak of other impurity, shows
That grown first in flexible fibreglass substrate is α-Ga2O3Material.Institute after being rapidly heated in step (4) to 700 DEG C of annealing
In the XRD spectrum for obtaining sample, it is found that crystal faces such as (- 401), (- 202), (111), (- 311), (400), (- 501) and (512) spread out
It penetrates peak and corresponds to β-Ga2O3The characteristic peak of phase, remaining diffraction maximum are α-Ga2O3Material shows that gained sample is α-Ga2O3/β-
Ga2O3Heterojunction structure material.Gained sample in step (4) is observed in scanning electron microscope, it is found that nanocolumn growth is uniform, such as
Shown in Fig. 3, α-Ga are shown2O3/β-Ga2O3A diameter of 100-200nm of hetero-junctions nano-pillar is highly 1.0-1.5 μm, nanometer
Column array substrate layer α-Ga2O3The thickness of film is 0.5-1.0 μm.α-Ga2O3Nano-pillar quick burning at high temperature, by α-
Ga2O3Surface oxidation at one layer of β-Ga2O3, form heterojunction structure.
To the Ti/Au/ α-Ga of gained in step (4)2O3/β-Ga2O3/ Ti/Au nano-array flexibility solar blind ultraviolet detectors
Part carries out photoelectric properties test.It is 50 μ W/cm that Fig. 4, which gives in -2V biass and light intensity,2254nm and 365nm illumination under pass through
Continuous lamp is turned on light the I-t curves for closing and measuring.4 I-t cycles of retest, the device show good repeatability.In dark
In the case of, the dark current of the detector is -3nA, when light intensity is 50 μ W/cm2254nm ultraviolet lights after, electric current increases rapidly
Add to -66nA, Light To Dark Ratio Iphoto/IdarkReach 22, high sensitivity.Under identical intensity of illumination, the ultraviolet light pair of 365nm is utilized
Gained Ti/Au/ α-Ga2O3/β-Ga2O3/ Ti/A hetero-junctions nano-array flexibility solar blind ultraviolet detector parts carry out Photoelectric Detection,
It was found that without photocurrent response, show that the flexible ultraviolet detector obtained by the present invention has day blind characteristic, can in outside work and
It is not interfered by sunlight, is expected to be used widely in the fields such as portable wearable device and intelligent textile.
Embodiment 2
The preparation method of flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga sheet metals obtained by step 2)/
Glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4) cavity is vacuumized, is passed through argon gas, adjust the pressure in vacuum chamber, then be passed through oxygen, heating Ga sheet metals/
Glass fabric substrate, using magnetron sputtering method on the gallium drop on gallium metal piece surface growth in situ α-Ga2O3Nano-pillar battle array
Row, and anneal, it then, is further continued for heating up, carries out quick in situ annealing, obtain α-Ga2O3/β-Ga2O3Hetero-junctions nano-pillar battle array
Row, wherein Ga2O3Target is set as 5 centimetres at a distance from glass fabric substrate, and it is 1 × 10 to vacuumize rear chamber pressure- 4Pa, after being passed through argon gas, the pressure of vacuum chamber is 1.0Pa, and after being passed through oxygen, the pressure of vacuum chamber is adjusted to 103Pa；Heat Ga gold
It is 450 DEG C, sputtering power 70W to belong to piece/glass fabric substrate temperature, and sputtering time is 1 hour；Short annealing after heating
Temperature be 750 DEG C, annealing time be 10 minutes.
(5) utilize mask plate and as radiofrequency magnetron sputtering technology in step (4) obtained by α-Ga2O3/β-Ga2O3It is heterogeneous
Tie nano column array and α-Ga2O3Film one layer of Ti/Au membrane electrode of each disposed thereon, wherein sputtering technology condition：It vacuumizes
Rear chamber pressure is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 1.0Pa, and sputtering power is
80W, sputtering time 2min.
Crystal structure, chemical composition, pattern and the solar blind UV electrical characteristics of gained hetero-junctions nano column array with
Example 1 is similar.
Embodiment 3
The preparation method of flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga sheet metals obtained by step 2)/
Glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4) cavity is vacuumized, is passed through argon gas, adjust the pressure in vacuum chamber, then be passed through oxygen, heating Ga sheet metals/
Glass fabric substrate, using magnetron sputtering method on the gallium drop on gallium metal piece surface growth in situ α-Ga2O3Nano-pillar battle array
Row, and anneal, it then, is further continued for heating up, carries out quick in situ annealing, obtain α-Ga2O3/β-Ga2O3Hetero-junctions nano-pillar battle array
Row, wherein Ga2O3Target is set as 5 centimetres at a distance from glass fabric substrate, and it is 1 × 10 to vacuumize rear chamber pressure- 4Pa, after being passed through argon gas, the pressure of vacuum chamber is 1.0Pa, and after being passed through oxygen, the pressure of vacuum chamber is adjusted to 103Pa；Heat Ga gold
It is 400 DEG C, sputtering power 70W to belong to piece/glass fabric substrate temperature, and sputtering time is 1 hour；Short annealing after heating
Temperature be 700 DEG C, annealing time be 20 minutes.
(5) utilize mask plate and as radiofrequency magnetron sputtering technology in step (4) obtained by α-Ga2O3/β-Ga2O3It is heterogeneous
Tie nano column array and α-Ga2O3Film one layer of Ti/Au membrane electrode of each disposed thereon, wherein sputtering technology condition：It vacuumizes
Rear chamber pressure is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 1.0Pa, and sputtering power is
80W, sputtering time 2min.
Embodiment 4
The preparation method of flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga sheet metals obtained by step 2)/
Glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4) cavity is vacuumized, is passed through argon gas, adjust the pressure in vacuum chamber, then be passed through oxygen, heating Ga sheet metals/
Glass fabric substrate, using magnetron sputtering method on the gallium drop on gallium metal piece surface growth in situ α-Ga2O3Nano-pillar battle array
Row, and anneal, it then, is further continued for heating up, carries out quick in situ annealing, obtain α-Ga2O3/β-Ga2O3Hetero-junctions nano-pillar battle array
Row, wherein Ga2O3Target is set as 5 centimetres at a distance from glass fabric substrate, and it is 1 × 10 to vacuumize rear chamber pressure- 4Pa, after being passed through argon gas, the pressure of vacuum chamber is 1.0Pa, and after being passed through oxygen, the pressure of vacuum chamber is adjusted to 103Pa；Heat Ga gold
It is 500 DEG C, sputtering power 80W to belong to piece/glass fabric substrate temperature, and sputtering time is 1.5 hours；It is quickly moved back after heating
The temperature of fire is 800 DEG C, and annealing time is 20 minutes.
(5) utilize mask plate and as radiofrequency magnetron sputtering technology in step (4) obtained by α-Ga2O3/β-Ga2O3It is heterogeneous
Tie nano column array and α-Ga2O3Film one layer of Ti/Au membrane electrode of each disposed thereon, wherein sputtering technology condition：It vacuumizes
Rear chamber pressure is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 1.0Pa, and sputtering power is
80W, sputtering time 2min.
Embodiment 5
As shown in Figure 1, the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, including glass fabric lining
Bottom is set to the α-Ga of 1 top of glass fabric substrate2O3Film 2 is set to α-Ga2O3α-the Ga of 2 top of film2O3/β-
Ga2O3Hetero-junctions nano column array 7 is set to α-Ga2O3/β-Ga2O3α-the Ga in 7 gap of hetero-junctions nano column array2O3Film 2
β-the Ga of top2O3Film 3 and Ti/Au membrane electrodes 4；α-the Ga2O3/β-Ga2O3Hetero-junctions nano column array includes point
It is distributed in α-Ga2O3α-the Ga of 2 top of film2O3Nano column array is coated on α-Ga2O3β-the Ga of 3 periphery of nano-pillar2O3Shell 4,
α-Ga2O3Film 2 and β-Ga2O3α-Ga are constituted between film 32O3/β-Ga2O3Hetero-junction thin-film layer；Ti/Au membrane electrodes 6 are two
A, one is set to α-Ga2O3/β-Ga2O37 top of hetero-junctions nano column array, another is set to α-Ga2O32 top of film.
α-the Ga2O3Film 2 is located at glass fabric substrate 1 and α-Ga2O3/β-Ga2O3Hetero-junctions nano column array 7 it
Between, α-Ga2O3/β-Ga2O37 distribution area of hetero-junctions nano column array is less than α-Ga2O32 area of film, is set to α-Ga2O3It is thin
The Ti/Au membrane electrodes 6 and α-Ga of 2 top of film2O3/β-Ga2O3Hetero-junctions nano column array 7 is located at α-Ga2O3Film 2 is same
Side.
α-the Ga2O3Film 2 and α-Ga2O3Nano-pillar is structure as a whole.
Further, the α-Ga2O3/β-Ga2O3A diameter of 100-200nm of hetero-junctions nano-pillar is highly 1.0-
1.5μm；α-the Ga2O3The thickness of film 2 is 0.5-1.0 μm.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, on the basis of the above description, the present invention method and principle within, made
Any modification equivalent replacement, improve, should all be included in the protection scope of the present invention.There is no need and unable to all
Embodiment is exhaustive.And obvious changes or variations extended from this are still in the protection model of the invention
Among enclosing.
Claims (7)
1. the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, which is characterized in that including glass fabric substrate,
α-the Ga being set to above glass fabric substrate2O3Film is set to α-Ga2O3α-Ga above film2O3/β-Ga2O3It is heterogeneous
Nano column array is tied, α-Ga are set to2O3/β-Ga2O3α-the Ga in hetero-junctions nano column array gap2O3β-Ga above film2O3
Film and Ti/Au membrane electrodes；α-the Ga2O3/β-Ga2O3Hetero-junctions nano column array includes being distributed in α-Ga2O3Film
α-the Ga of top2O3Nano column array is coated on α-Ga2O3β-the Ga of nano-pillar periphery2O3Shell, α-Ga2O3Film and β-
Ga2O3α-Ga are constituted between film2O3/β-Ga2O3Hetero-junction thin-film layer；Ti/Au membrane electrodes are two, and one is set to α-
Ga2O3/β-Ga2O3Above hetero-junctions nano column array, another is set to α-Ga2O3Above film.
2. the flexible solar blind ultraviolet detector according to claim 1 based on gallium oxide heterojunction structure, which is characterized in that
α-the Ga2O3Film is located at glass fabric substrate and α-Ga2O3/β-Ga2O3Between hetero-junctions nano column array, α-Ga2O3/
β-Ga2O3Hetero-junctions nano column array distribution area is less than α-Ga2O3Film size is set to α-Ga2O3Ti/Au above film
Membrane electrode and α-Ga2O3/β-Ga2O3Hetero-junctions nano column array is located at α-Ga2O3Film the same side.
3. the flexible solar blind ultraviolet detector according to claim 1 based on gallium oxide heterojunction structure, which is characterized in that
α-the Ga2O3Film and α-Ga2O3Nano-pillar is structure as a whole.
4. the flexible solar blind ultraviolet detector according to claim 1 or 2 or 3 based on gallium oxide heterojunction structure, special
Sign is, the α-Ga2O3The thickness of film is 0.5-1.0 μm；α-the Ga2O3/β-Ga2O3Hetero-junctions nano-pillar it is a diameter of
100-200nm is highly 1.0-1.5 μm.
5. the preparation method of the flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure, which is characterized in that including following
Step：
Step 1 cleans glass fabric substrate, and cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
Glass fabric substrate is positioned over warm table by step 2, and the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
Step 3, Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga sheet metals obtained by step 2/
Glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
Step 4 vacuumizes vacuum chamber cavity, is passed through argon gas, adjusts the pressure in vacuum chamber, then be passed through oxygen, heating Ga gold
Belong to piece/glass fabric substrate, using magnetron sputtering method on the gallium drop on gallium metal piece surface growth in situ α-Ga2O3Nanometer
Column array, and anneal, it then, is further continued for heating up, carries out quick in situ annealing, obtain α-Ga2O3/β-Ga2O3Hetero-junctions nano-pillar
Array and α-Ga2O3/β-Ga2O3Hetero-junction thin-film layer, wherein Ga2O3Target is set as at a distance from glass fabric substrate
5 centimetres, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8-1.0Pa, is passed through oxygen
Afterwards, the pressure of vacuum chamber is adjusted to 103Pa；
Step 5, using mask plate and as radiofrequency magnetron sputtering technology in step 4 obtained by α-Ga2O3/β-Ga2O3Hetero-junctions
Nano column array and α-Ga2O3Film one layer of Ti/Au membrane electrode of each disposed thereon, wherein sputtering technology condition：After vacuumizing
Chamber pressure is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, operating air pressure 0.8-1.0Pa, sputtering power
For 60-80W, sputtering time 2min.
6. preparation method according to claim 5, it is characterised in that heat Ga sheet metals/glass fibers in the step four
It is 400-500 DEG C, sputtering power 60-80W to tie up cloth substrate temperature, and sputtering time is 1-1.5 hours.
7. preparation method according to claim 5 or 6, it is characterised in that quick in situ moves back after heating up in the step four
The temperature of fire is 700-800 DEG C, and annealing time is 10-20 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810535388.3A CN108767028B (en) | 2018-05-30 | 2018-05-30 | Flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810535388.3A CN108767028B (en) | 2018-05-30 | 2018-05-30 | Flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108767028A true CN108767028A (en) | 2018-11-06 |
| CN108767028B CN108767028B (en) | 2021-10-15 |
Family
ID=64003872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810535388.3A Active CN108767028B (en) | 2018-05-30 | 2018-05-30 | Flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108767028B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904243A (en) * | 2019-01-25 | 2019-06-18 | 南京理工大学 | Class paper base flexibility ultraviolet light detector based on interface optimization and preparation method thereof |
| CN111463297A (en) * | 2020-04-16 | 2020-07-28 | 杭州紫芯光电有限公司 | Solar blind ultraviolet detector based on flexible titanium metal wire/gallium oxide nano array and preparation method thereof |
| CN112382691A (en) * | 2020-10-16 | 2021-02-19 | 华南师范大学 | Self-powered detector containing gallium nitride/gallium oxide nano-pillar array and preparation method |
| RU207743U1 (en) * | 2021-07-16 | 2021-11-15 | Александр Вячеславович Цымбалов | SOLAR BLIND UV DETECTOR |
| CN114975671A (en) * | 2021-02-26 | 2022-08-30 | 松山湖材料实验室 | Solar blind ultraviolet detector, preparation method thereof and solar blind ultraviolet detection method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009070950A (en) * | 2007-09-12 | 2009-04-02 | Koha Co Ltd | Ultraviolet sensor |
| CN101468787A (en) * | 2007-12-28 | 2009-07-01 | 财团法人工业技术研究院 | Ultra-thin encapsulation structure of electroacoustic sensing micro-electro-mechanism system |
| US20110133597A1 (en) * | 2009-12-05 | 2011-06-09 | Scannanotek Oy | Electromechanical systems, waveguides and methods of production |
| JP2011176090A (en) * | 2010-02-24 | 2011-09-08 | Nippon Light Metal Co Ltd | Ultraviolet sensor and method for manufacturing same |
| CN106847965A (en) * | 2016-12-09 | 2017-06-13 | 中国计量大学 | Solar cell chunk of flexible package and preparation method thereof in solar energy unmanned plane |
| CN107819045A (en) * | 2017-10-27 | 2018-03-20 | 张香丽 | UV photodetector based on gallium oxide heterojunction structure and preparation method thereof |
| CN107841785A (en) * | 2017-10-27 | 2018-03-27 | 浙江理工大学 | A kind of gallium oxide mutually ties nano column array and preparation method thereof |
-
2018
- 2018-05-30 CN CN201810535388.3A patent/CN108767028B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009070950A (en) * | 2007-09-12 | 2009-04-02 | Koha Co Ltd | Ultraviolet sensor |
| CN101468787A (en) * | 2007-12-28 | 2009-07-01 | 财团法人工业技术研究院 | Ultra-thin encapsulation structure of electroacoustic sensing micro-electro-mechanism system |
| US20110133597A1 (en) * | 2009-12-05 | 2011-06-09 | Scannanotek Oy | Electromechanical systems, waveguides and methods of production |
| JP2011176090A (en) * | 2010-02-24 | 2011-09-08 | Nippon Light Metal Co Ltd | Ultraviolet sensor and method for manufacturing same |
| CN106847965A (en) * | 2016-12-09 | 2017-06-13 | 中国计量大学 | Solar cell chunk of flexible package and preparation method thereof in solar energy unmanned plane |
| CN107819045A (en) * | 2017-10-27 | 2018-03-20 | 张香丽 | UV photodetector based on gallium oxide heterojunction structure and preparation method thereof |
| CN107841785A (en) * | 2017-10-27 | 2018-03-27 | 浙江理工大学 | A kind of gallium oxide mutually ties nano column array and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| SIN YOUNG PARK等: "Self-Catalytic Growth of β-Ga2O3 Nanowires Deposited by Radio-Frequency Magnetron Sputtering", 《APPLIED PHYSICS EXPRESS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904243A (en) * | 2019-01-25 | 2019-06-18 | 南京理工大学 | Class paper base flexibility ultraviolet light detector based on interface optimization and preparation method thereof |
| CN111463297A (en) * | 2020-04-16 | 2020-07-28 | 杭州紫芯光电有限公司 | Solar blind ultraviolet detector based on flexible titanium metal wire/gallium oxide nano array and preparation method thereof |
| CN111463297B (en) * | 2020-04-16 | 2021-10-12 | 杭州紫芯光电有限公司 | Solar blind ultraviolet detector based on flexible titanium metal wire/gallium oxide nano array and preparation method thereof |
| CN112382691A (en) * | 2020-10-16 | 2021-02-19 | 华南师范大学 | Self-powered detector containing gallium nitride/gallium oxide nano-pillar array and preparation method |
| CN114975671A (en) * | 2021-02-26 | 2022-08-30 | 松山湖材料实验室 | Solar blind ultraviolet detector, preparation method thereof and solar blind ultraviolet detection method |
| CN114975671B (en) * | 2021-02-26 | 2023-06-02 | 松山湖材料实验室 | Solar blind ultraviolet detector, preparation method thereof and solar blind ultraviolet detection method |
| RU207743U1 (en) * | 2021-07-16 | 2021-11-15 | Александр Вячеславович Цымбалов | SOLAR BLIND UV DETECTOR |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108767028B (en) | 2021-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108767028A (en) | Flexible solar blind ultraviolet detector and preparation method thereof based on gallium oxide heterojunction structure | |
| CN107919409B (en) | One kind being based on CsPbBr3The visible light photodetector and preparation method thereof of full-inorganic perovskite nano wire | |
| Xu et al. | ZnO-based photodetector: from photon detector to pyro-phototronic effect enhanced detector | |
| CN109000790B (en) | Gallium oxide-based flexible solar blind ultraviolet flame detector and preparation method thereof | |
| CN108767050B (en) | Flexible ultraviolet photoelectric detector based on cuprous oxide/gallium oxide pn junction and preparation method thereof | |
| CN107819045B (en) | UV photodetector and preparation method thereof based on gallium oxide heterojunction structure | |
| CN110676339B (en) | Gallium oxide nanocrystalline film solar blind ultraviolet detector and preparation method thereof | |
| CN111613691B (en) | Flexible ultraviolet detector based on copper oxide/gallium oxide nano-pillar array pn junction and preparation method thereof | |
| CN108735833B (en) | Flexible broad-spectrum photoelectric detector of organic/inorganic pn junction nano array and preparation method thereof | |
| Mridha et al. | Thickness dependent photoconducting properties of ZnO films | |
| CN108615784B (en) | Tin oxide/gallium oxide hetero-junction thin-film ultraviolet detector and preparation method thereof | |
| CN105489694A (en) | Zinc oxide/silicon p-n heterojunction ultraviolet light detector and preparation method thereof | |
| CN109360862B (en) | Self-driven photoelectric detector based on ZnO nanorod/Si heterojunction and preparation method | |
| CN107658384B (en) | Organic-inorganic multi-heterojunction nano-array-based broad-spectrum photoelectric detector and preparation method thereof | |
| CN111864080A (en) | Two-dimensional organic-inorganic hybrid perovskite crystal photoelectric detector and preparation method thereof | |
| CN107425090B (en) | Vertical-type photodetector and preparation method thereof | |
| CN104183665B (en) | The preparation method of the photodetector based on p-type ZnSe nano wire/n-type Si hetero-junctions | |
| CN108735826B (en) | Glass fiber-based flexible gallium oxide nano-array solar blind ultraviolet detector and preparation method thereof | |
| CN108982600A (en) | Based on gallium oxide/gallic acid zinc hetero-junctions nano-array flexible gas sensor and preparation method thereof | |
| CN111525036A (en) | Self-driven perovskite photoelectric detector and preparation method thereof | |
| CN110112233A (en) | Based on silver nanowires-graphene/gallium oxide nano-pillar photodetection structure, device and preparation method | |
| CN107768463A (en) | A kind of self-driven photodetector and preparation method thereof | |
| Gao et al. | Carrier lifetime exceeding 81 ns in single crystalline perovskite nanowires enable large on-off ratio photodetectors | |
| CN104934501B (en) | Preparation method for ultraviolet photoelectric device based on Sm2O3/n-Si heterostructure | |
| CN109301002B (en) | Based on (Al)xGa1-x)2O3Ultraviolet photoelectric detector of material MSM structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221107 Address after: No. 99, Gangcheng Road, Administrative Committee of Dongying Port Economic Development Zone, Dongying City, Shandong Province 257237 Patentee after: Dongying Ruigang Investment Promotion Service Co.,Ltd. Address before: 322207 Dafan 63, Xiaming village, Dafan Township, Pujiang County, Jinhua City, Zhejiang Province Patentee before: Chen Qian |