CN103165722A - Microcrystalline silicon thin film solar cell - Google Patents
Microcrystalline silicon thin film solar cell Download PDFInfo
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- CN103165722A CN103165722A CN2013101019068A CN201310101906A CN103165722A CN 103165722 A CN103165722 A CN 103165722A CN 2013101019068 A CN2013101019068 A CN 2013101019068A CN 201310101906 A CN201310101906 A CN 201310101906A CN 103165722 A CN103165722 A CN 103165722A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The invention discloses a microcrystalline silicon thin film solar cell. The solar cell comprises a flexible substrate, a back reflection electrode, an N-type amorphous silicon doped layer, a microcrystalline silicon intrinsic absorption layer, a P-type amorphous silicon lightly-doped layer, a P-type amorphous silicon doped layer and a transparent conducting thin film which are sequentially arranged from bottom to top, the band gap of the P-type amorphous silicon lightly-doped layer is 1.5eV-1.9eV, the thickness of the P-type amorphous silicon lightly-doped layer is 1nm-20nm, the P-type amorphous silicon lightly-doped layer is prepared by a plasma enhanced chemical vapor deposition device, and reactant gas is silane, hydrogen and borane. By the aid of the microcrystalline silicon thin film solar cell, mismatch of an energy band and an interface between the intrinsic absorption layer and the P-type amorphous silicon doped layer can be effectively improved, and output and collection of current carriers are facilitated, so that the conversion efficiency of the cell is improved.
Description
Technical field
The present invention relates to a kind of photovoltaic solar battery, particularly, relate to a kind of microcrystalline silicon solar cell.
Background technology
In various hull cells, amorphous silicon (a-Si:H) thin film solar cell be develop the earliest, the hull cell of most study.Due to the greater band gap of amorphous silicon thin-film materials own, insufficient to longwave optical absorption in solar spectrum, limited the further raising of battery efficiency.In order to address this problem, carried out in recent years the research work of microcrystal silicon (μ c-Si:H) thin film solar cell.
Usually between 1.8eV ~ 2.1eV, and the band gap width of microcrystalline silicon intrinsic layer is usually between 1.2eV ~ 1.5eV due to the band gap width of P type layer in the silicon-based thin film solar cell structure, cause between Intrinsic Gettering layer and P type layer can be with and the interface mismatch larger.At this, larger room for improvement is arranged on the one hand.
The method that changes silica-base film material band gap width has three kinds usually: the one, and by changing the technological parameters such as hydrogen dilution rate, power, the crystallization rate of controlled material finally reaches the purpose that changes band gap width when deposit film; The 2nd, adjust doping content when deposit film; The 3rd, form alloy with elements such as carbon, germanium, but the defect state density of amorphous silicon germanium material is large, the band gap width of non-crystal silicon carbon material all is not suitable as the p layer of microcrystalline silicon solar cell greater than 2.0eV.
Existing document proposes P layer with micro crystal silicon solar battery and is divided into two-layerly, by regulating and controlling two-layer crystallization rate, doping content and thickness, obtains finally that high electricity is led, the P layer of high crystallization rate.But microcrystalline silicon solar cell mentioned in such patent uses the time from transparent substrates one side incident all based on transparent substrates such as glass, and is fully opposite with the structure of flexible substrate microcrystalline silicon solar cell.
For the opaque flexible substrate microcrystalline silicon solar cell of substrate, also there is document to propose the p layer is divided into different two-layer of crystallization rate, improving the efficient of solar cell, but equal methods of not mentioned change p layer doping content.
Summary of the invention
The purpose of this invention is to provide a kind of flexible substrate microcrystalline silicon solar cell, add one deck lightly-doped layer between microcrystalline silicon intrinsic layer and P type amorphous silicon doped layer, reduce can be with and the interface mismatch between Intrinsic Gettering layer and P type layer.
In order to achieve the above object, the invention provides a kind of microcrystalline silicon solar cell, wherein, this solar cell comprises flexible substrate, back reflector, N-type amorphous silicon doped layer, microcrystal silicon Intrinsic Gettering layer (that is, I layer microcrystal silicon layer), P type amorphous silicon lightly-doped layer, P type amorphous silicon doped layer and the transparent conductive film that sets gradually from top to bottom; The band gap of described P type amorphous silicon lightly-doped layer is 1.5eV ~ 1.9 eV; The thickness of described P type amorphous silicon lightly-doped layer is 1 nm～20 nm.
Above-mentioned microcrystalline silicon solar cell, wherein, described P type amorphous silicon lightly-doped layer prepares by plasma enhanced chemical vapor deposition equipment (PECVD).
Above-mentioned microcrystalline silicon solar cell, wherein, described N-type amorphous silicon doped layer, microcrystal silicon Intrinsic Gettering layer, P type amorphous silicon doped layer also prepare by PECVD, and wherein the reacting gas of N-type amorphous silicon doped layer is hydrogen, silane and phosphine, and thickness is 10nm ~ 50nm; The reacting gas of microcrystal silicon Intrinsic Gettering layer is hydrogen, silane, and thickness is 1000nm ~ 2000nm; The reacting gas of P type amorphous silicon doped layer is hydrogen, silane and borine, and thickness is 10nm ~ 50nm.
Above-mentioned microcrystalline silicon solar cell, wherein, the reacting gas when described P type amorphous silicon lightly-doped layer prepares is identical with preparation P type amorphous silicon doped layer, is silane, hydrogen and borine.
Above-mentioned microcrystalline silicon solar cell, wherein, the borine that adopts when the borine in the reacting gas when described P type amorphous silicon lightly-doped layer prepares and the gas flow ratio of silane prepare less than P type amorphous silicon doped layer and the gas flow ratio of silane.
Above-mentioned microcrystalline silicon solar cell, wherein, described flexible substrate is stainless steel or polyimide substrate.
Above-mentioned microcrystalline silicon solar cell, wherein, described back reflector preferably deposits the Ag/ZnO preparation by the method for magnetron sputtering on described flexible substrate.
Above-mentioned microcrystalline silicon solar cell, wherein, described transparent conductive film is as top electrode, it deposits the ITO(indium tin oxide by magnetically controlled sputter method) preparation.
Microcrystalline silicon solar cell provided by the invention has the following advantages:
Due in the present invention, be provided with P type amorphous silicon lightly-doped layer, make the electronics that produces at the interface near I/P can't cross interface potential barrier, limited the generation of reverse current, make the hole of generation more easily be collected into the P layer region, therefore effectively improve can be with and the interface mismatch between Intrinsic Gettering layer and P type amorphous silicon doped layer, be conducive to output and the collection of charge carrier, thereby improved the conversion efficiency of battery.
Description of drawings
Fig. 1 is the schematic diagram of microcrystalline silicon solar cell of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
As shown in Figure 1, microcrystalline silicon solar cell provided by the invention comprises the flexible substrate 1, back reflector 2, N-type amorphous silicon doped layer 3, microcrystal silicon Intrinsic Gettering layer 4, P type amorphous silicon lightly-doped layer 5, P type amorphous silicon doped layer 6 and the transparent conductive film 7 that set gradually from top to bottom.
This flexible substrate 1 is stainless steel or polyimide substrate.
The band gap of P type amorphous silicon lightly-doped layer 5 is 1.5eV ~ 1.9 eV; The thickness of this P type amorphous silicon lightly-doped layer 5 is 1 nm～20 nm.5 layers of P type amorphous silicon light dopes prepare by plasma enhanced chemical vapor deposition equipment (PECVD), and reacting gas is silane, hydrogen and borine.
Embodiment 1
Be to prepare micro crystal silicon solar battery by following steps at the bottom of the stainless steel lining of 50 μ m at thickness.
Step 1 adopts magnetically controlled sputter method at deposition Ag/ZnO back reflector 2 on 1 at the bottom of stainless steel lining.
Step 2, the microcrystal silicon battery of using plasma chemical vapour deposition (CVD) (PECVD) method deposition NIP structure.Wherein the reacting gas of N-type amorphous silicon doped layer 3 is hydrogen, silane and phosphine, and thickness is 10nm ~ 50nm; The reacting gas of microcrystal silicon Intrinsic Gettering layer 4 is hydrogen, silane, and thickness is 1000nm ~ 2000nm; The reacting gas of P type amorphous silicon lightly-doped layer 5 is hydrogen, silane and borine, and thickness is about 5nm; The reacting gas of P type amorphous silicon doped layer 6 is hydrogen, silane and borine, and thickness is 10nm ~ 50nm.The borine that the borine that adopts during 5 preparation of P type amorphous silicon lightly-doped layer and the gas flow ratio of silane adopt when preparing less than P type amorphous silicon doped layer 6 and the gas flow ratio of silane.
Step 3 adopts magnetically controlled sputter method deposition ITO(indium tin oxide) transparent conductive film 7 is as top electrode.
With do not comprise the sample A of P type amorphous silicon lightly-doped layer 5 and adopt the above-mentioned steps preparation to comprise other conditionally complete of P type amorphous silicon lightly-doped layer 5(identical) sample B at 25 ℃, AM0 solar spectrum (1353W/m
2) under carry out solar cell output characteristic test.The result of two kinds of batteries is as shown in table 1.
The J-V test result of table 1 sample A and sample B.
As can be known from Table 1, after inserting P type amorphous silicon lightly-doped layer 5, open circuit voltage and fill factor, curve factor descend to some extent, but short-circuit current density increases substantially, and make the electricity conversion of battery be improved.
Microcrystalline silicon solar cell provided by the invention, added one deck P type amorphous silicon lightly-doped layer 5 between microcrystal silicon Intrinsic Gettering layer 4 and P type amorphous silicon doped layer 6, can effectively improve can be with and the interface mismatch between microcrystal silicon Intrinsic Gettering layer 4 and P type amorphous silicon doped layer 6, be conducive to output and the collection of charge carrier, thereby improve the conversion efficiency of battery.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (5)
1. microcrystalline silicon solar cell, it is characterized in that, this solar cell comprises flexible substrate (1), back reflector (2), N-type amorphous silicon doped layer (3), microcrystal silicon Intrinsic Gettering layer (4), P type amorphous silicon lightly-doped layer (5), P type amorphous silicon doped layer (6) and the transparent conductive film (7) that sets gradually from top to bottom;
The band gap of described P type amorphous silicon lightly-doped layer (5) is 1.5eV ~ 1.9 eV;
The thickness of described P type amorphous silicon lightly-doped layer (5) is 1 nm～20 nm.
2. microcrystalline silicon solar cell as claimed in claim 1, is characterized in that, described P type amorphous silicon lightly-doped layer (5) prepares by plasma enhanced chemical vapor deposition equipment.
3. microcrystalline silicon solar cell as claimed in claim 2, is characterized in that, the reacting gas during described P type amorphous silicon lightly-doped layer (5) preparation is identical with preparation P type amorphous silicon doped layer (6), is silane, hydrogen and borine.
4. microcrystalline silicon solar cell as claimed in claim 3, it is characterized in that the borine that the borine in the reacting gas during described P type amorphous silicon lightly-doped layer (5) preparation and the gas flow ratio of silane adopt when preparing less than P type amorphous silicon doped layer (6) and the gas flow ratio of silane.
5. microcrystalline silicon solar cell as claimed in claim 1, is characterized in that, described flexible substrate (1) is stainless steel or polyimide substrate.
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| CN2013101019068A CN103165722A (en) | 2013-03-27 | 2013-03-27 | Microcrystalline silicon thin film solar cell |
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| CN2013101019068A CN103165722A (en) | 2013-03-27 | 2013-03-27 | Microcrystalline silicon thin film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211196A (en) * | 2020-02-15 | 2020-05-29 | 北京工业大学 | High-sensitivity high-linearity detector |
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| US20070209699A1 (en) * | 2006-03-08 | 2007-09-13 | National Science And Technology Development Agency | Thin film solar cell and its fabrication process |
| CN201562684U (en) * | 2009-11-03 | 2010-08-25 | 福建钧石能源有限公司 | Silica-based thin-film solar battery |
| CN102110734A (en) * | 2011-01-18 | 2011-06-29 | 西安交通大学 | Nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell |
| CN102142469A (en) * | 2010-12-01 | 2011-08-03 | 南开大学 | P type microcrystalline silicon carbon film material for PI flexible substrate solar cell and preparation |
| CN102332504A (en) * | 2011-04-13 | 2012-01-25 | 东旭集团有限公司 | Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell |
| CN102569481A (en) * | 2012-02-01 | 2012-07-11 | 南开大学 | Nano silicon window layer with gradient band gap characteristic and preparation method thereof |
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- 2013-03-27 CN CN2013101019068A patent/CN103165722A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070209699A1 (en) * | 2006-03-08 | 2007-09-13 | National Science And Technology Development Agency | Thin film solar cell and its fabrication process |
| CN201562684U (en) * | 2009-11-03 | 2010-08-25 | 福建钧石能源有限公司 | Silica-based thin-film solar battery |
| CN102142469A (en) * | 2010-12-01 | 2011-08-03 | 南开大学 | P type microcrystalline silicon carbon film material for PI flexible substrate solar cell and preparation |
| CN102110734A (en) * | 2011-01-18 | 2011-06-29 | 西安交通大学 | Nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell |
| CN102332504A (en) * | 2011-04-13 | 2012-01-25 | 东旭集团有限公司 | Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell |
| CN102569481A (en) * | 2012-02-01 | 2012-07-11 | 南开大学 | Nano silicon window layer with gradient band gap characteristic and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211196A (en) * | 2020-02-15 | 2020-05-29 | 北京工业大学 | High-sensitivity high-linearity detector |
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Application publication date: 20130619 |