CN102110734A - Nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell - Google Patents
Nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell Download PDFInfo
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- CN102110734A CN102110734A CN2011100207906A CN201110020790A CN102110734A CN 102110734 A CN102110734 A CN 102110734A CN 2011100207906 A CN2011100207906 A CN 2011100207906A CN 201110020790 A CN201110020790 A CN 201110020790A CN 102110734 A CN102110734 A CN 102110734A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 title abstract 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 85
- 229910052710 silicon Inorganic materials 0.000 claims description 85
- 239000010703 silicon Substances 0.000 claims description 85
- 239000013078 crystal Substances 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract 2
- 238000013329 compounding Methods 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 22
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000005543 nano-size silicon particle Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 241000084978 Rena Species 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention discloses a nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell. The cell sequentially comprises a front side silver electrode, a front side TCO (transparent conductive oxide) conductive thin film, a p type heavily doped nanocrystalline silicon layer, a p type lightly doped nanocrystalline silicon layer, a p type lightly diffused crystalline silicon layer, an n type crystalline silicon layer, an intrinsic nanocrystalline silicon layer, an n type nanocrystalline silicon, a back side TCO conductive thin film and a back side silver electrode. The p type lightly doped nanocrystalline silicon layer and the p type lightly diffused crystalline silicon layer are prepared between the p type heavily doped nanocrystalline silicon layer and an n type crystalline silicon substrate on the front side of the cell, and a thin buffer layer and a concentration gradient junction are formed between the p type heavily doped nanocrystalline silicon layer and the n type crystalline silicon substrate. By utilizing the structure, the problem of lattice mismatch between the p type layer and an i type layer of the conventional heterojunction photovoltaic cell can be overcome, an interface electric field can be enhanced, the compounding of an interface can be reduced, the open-circuit voltage and a fill factor of the photovoltaic cell can be improved, and the photoelectric conversion efficiency can be improved.
Description
Technical field
What the present invention relates to is a kind of new construction of photovoltaic cell, belongs to the photovoltaic field.
Background technology
Photovoltaic cell is developing to both direction as a kind of electrooptical device that directly utilizes solar energy always, and one is the production cost that reduces photovoltaic cell, and another is the photoelectric conversion efficiency that improves photovoltaic cell.Simultaneously, the stability of photovoltaic cell also is a problem that merits attention.
Crystal silicon photovoltaic cell has the photoelectric conversion efficiency height, and the advantage of production technology maturation occupies more than 80% of photovoltaic cell Gross World Product all the time.But traditional crystal silicon photovoltaic cell need carry out for a long time at high temperature when producing, high-temperature technology may make silicon materials produce more defects, can be restricted to the raising of battery efficiency, and in the pyroprocess if there is the pollution meeting greatly to reduce the efficient of battery, material and production environment have all been proposed higher requirement; Simultaneously, hot environment can increase the production cost of battery.The present present situation of crystal silicon photovoltaic cell is: photoelectric conversion efficiency is higher, but cost is also too high.So people turn to research amorphous silicon photovoltaic battery, the amorphous silicon photovoltaic battery has solved the problem of production temperature, and it can be produced at low temperatures, simultaneously because the optical absorption coefficient of amorphous silicon is big, the very thin thickness that battery is required has been saved the production material, thereby has reduced the production cost of battery.But the efficient of amorphous silicon photovoltaic battery is relatively low, simultaneously, the amorphous silicon photovoltaic battery faces the problem of a light-induced degradation again, the photoelectric conversion efficiency that is the amorphous silicon photovoltaic battery can reduce along with the increase of light application time, this problem does not well solve all the time, influenced the life-span of amorphous silicon photovoltaic battery, its stability awaits further raising.Thus people sought another approach be exactly with the broad-band gap amorphous silicon as Window layer, monocrystalline silicon, polycrystalline silicon material be as substrate, forms the heterojunction photovoltaic cell.Existing higher photoelectric conversion efficiency, cost is relatively low again.Originally develop pn type heterojunction photovoltaic cell, develop pin type heterojunction photovoltaic cell subsequently again.
In recent years, Japan Sanyo company has developed a kind of amorphous silicon-crystal silicon heterojunction photovoltaic cell---HIT battery, its basic structure is P type amorphous silicon membrane layer/intrinsic amorphous silicon thin layer/n type monocrystalline silicon layer, the highest laboratory efficient of this kind HIT battery is 23%, and the efficient of commercially available 200W assembly is 17%.This battery has two-sided symmetrical structure, and there is the intrinsic amorphous silicon film n type monocrystalline silicon both sides, front one deck p type amorphous silicon layer, and one deck n is adopted at the back side
+The type amorphous silicon respectively has layer of transparent electrode layer and electrode at front and back afterwards as back of the body electric field.This structure has made full use of the effect of amorphous silicon good surface passivation, and the cell efficient of preparing reaches more than 20%.And whole process flow all is to realize down at 200 ℃, reduced the damage of thermal stress to the battery sheet, reduced production cost simultaneously.
Yet, also there is weakness in the HIT battery, mainly comprise n type and the heavily doped amorphous silicon membrane of p type in its structure, but n type and the heavily doped amorphous silicon membrane of p type are because the doping content height can make the structure of amorphous silicon membrane distort, cause " dead layer " easily, influenced the mobility of few son simultaneously, caused a large amount of defective complex centres, thereby cause the open circuit voltage of battery and fill factor, curve factor to reduce, dark current increases, the short circuit current of battery reduces, and the HIT battery also has the discontinuous problem of interface electric field, and the performance of battery is caused certain influence.
In addition, amorphous silicon material exists more interfacial state and defective, in order to guarantee the photo-generated carrier barrier region that drifted about, form photogenerated current, must limit the thickness of N type amorphous silicon layer, this has just increased the absorption of Window layer to sunlight, also makes the short circuit current of battery reduce.And there is the phenomenon of photo attenuation in amorphous silicon material, has influence on the generated output and the useful life of battery component.
The discontinuous problem of HIT heterojunction battery interface electric field at present improves photovoltaic cell open circuit voltage and fill factor, curve factor simultaneously, realizes higher photoelectric conversion efficiency.The present invention proposes a kind of nanometer silicon/crystalline silicon heterojunction photovoltaic cell structure: by on crystalline silicon substrate, forming the concentration gradient knot, also be that the window material layer is to the resilient coating between the crystalline silicon substrate simultaneously, in the technology implementation procedure, by changing CH in the deposition process
4And B
2H
6Concentration change the energy gap and the doping content of resilient coating respectively, make its energy gap by the 1.97ev gradual change to 1.75ev, realize the continuous variation of interface electric field, simultaneously owing to formed the concentration gradient knot, can be formed with and render a service the field, quickened to photo-generated carrier separation, improved the collection rate of charge carrier, it is compound to reduce the interface, can obtain bigger open circuit voltage and photoelectric conversion efficiency.
Summary of the invention
The object of the invention is to improve the deficiency of existing photovoltaic cell structure, overcome the discontinuous problem of HIT battery interface electric field, obtain a kind of photoelectric conversion efficiency height, on the crystalline silicon substrate of battery, form the silicon heterogenous photovoltaic cell of nano silicon crystal of concentration gradient knot.
The present invention is achieved through the following technical solutions:
The laminated layer sequence of battery set gradually from top to bottom for: positive silver electrode, positive TCO conductive film, p type heavy doping nanometer silicon layer are p
+Layer, p type light dope nanometer silicon layer are that gently to spread crystal silicon layer be p for p layer, p type
-Layer, n type crystal silicon layer, intrinsic nanometer silicon layer are i layer, n type nanometer silicon layer, back side TCO conductive film, back silver electrode; Or positive silver electrode, positive TCO conductive film, n type heavy doping nanometer silicon layer are n
+Layer, n type light dope nanometer silicon layer are that gently to spread crystal silicon layer be n for n layer, n type
-Layer, p type crystal silicon layer, intrinsic nanometer silicon layer are i layer, p type nanometer silicon layer, back side TCO conductive film, back silver electrode, wherein doping content: p
+Layer＞p layer＞p
-Layer, n
+Layer＞n layer＞n
-Layer.
The energy gap of p type heavy doping nanometer silicon layer is 1.95ev～1.99ev.
P type light dope nanometer silicon layer is the graded bandgap of 1.97ev to 1.75ev.
Described crystalline silicon substrate is CZ monocrystalline substrate, FZ monocrystalline substrate or polysilicon substrate, and the surface has suede structure.
The thickness of p type or n type light dope nanometer silicon layer and light diffusion crystal silicon layer is 9～11 nanometers.
Utilize the present invention in battery, to form the structure of concentration gradient knot, can obtain the production cost lower than common crystal silicon photovoltaic cell; Than better stability of common amorphous silicon battery and photoelectric conversion efficiency; Heterojunction battery structure of the present invention can overcome the discontinuous problem of HIT battery interface battery, simultaneously, reason owing to the concentration gradient knot, can be formed with and render a service the field, improved the collection rate of charge carrier, it is compound to have reduced the interface, has improved the open circuit voltage of battery, thereby has improved the photoelectric conversion efficiency of battery.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Below in conjunction with accompanying drawing content of the present invention is described in further detail.
Embodiment
Laminated layer sequence of the present invention is followed successively by: the structure that positive silver electrode, positive TCO conductive film, the heavily doped nanometer silicon layer of p type, p type light dope nanometer silicon layer, p type gently spread crystal silicon layer, n type crystal silicon layer, intrinsic nanometer silicon layer, n type nanometer silicon layer, back side TCO conductive film, back silver electrode is the example explanation.At first choose n type crystal silicon chip, it is carried out chemical cleaning technology and the making herbs into wool in producing of conventional crystal silicon cell, on n type crystal silicon chip, spread the p type layer of one deck low concentration then by diffusion technology, utilize the wet-etching technology of RENA to remove back of the body knot again, edge pn knot, on the diffusingsurface that n type crystal silicon chip keeps, utilize the pecvd process lightly doped nanometer silicon layer of deposition one deck p type earlier then, deposit the heavily doped nanometer silicon layer of one deck p type again, successively deposit one deck nano-silicon intrinsic layer and one deck n type nanometer silicon layer going to carry on the back on the knot face of n type crystal silicon chip afterwards, utilize the method for sputter to make the TCO conducting film respectively again after the deposition, utilize the positive back face printing silver electrode of screen printing technique at last at the battery sheet on battery sheet two sides.With reference to shown in Figure 1: 1. positive silver electrode, 2. positive TCO conductive film, the heavily doped nanometer silicon layer of 3.p type, 4.p type light dope nanometer silicon layer, 5.p type gently spread crystal silicon layer, 6.n type crystal silicon layer, 7. intrinsic nanometer silicon layer, 8.n type nanometer silicon layer, 9. back side TCO conductive film, 10. back silver electrode.
With laminated layer sequence shown in Figure 1 is the example explanation, and preparation process comprises following step:
(1) choose n type crystal silicon chip, the resistivity of silicon chip is 1 Ω cm, and the thickness of silicon chip is about 200 μ m, goes damage and making herbs into wool to handle to silicon chip.
(2) carry out diffusion technology on n type crystal silicon chip, at first prepare the p type layer of one deck low concentration by the diffused with boron source on n type crystal silicon chip, by control process parameters, making the p type gently spread crystal silicon layer 5 thickness is 10 nanometers, and the surface concentration of boron is 1.0 * 10
17/ cm
3, utilize the wet-etching technology of RENA to remove back of the body knot, edge pn knot again.
(3) the p type at the n type crystal silicon chip that passes through above-mentioned processing gently spreads on the crystal silicon layer 5, adopts pecvd process to deposit p type light dope nanometer silicon layer 4 and p type heavy doping nanometer silicon layer 3 respectively.
Pass through to change CH in the technical process
4And B
2H
6Concentration change the energy gap and the doping content of sedimentary deposit respectively, the thickness that finally obtains p type light dope nanometer silicon layer 4 is 10 nanometers, doping content is 1.0 * 10
18/ cm3; The thickness of p type heavy doping nanometer silicon layer 3 is 10 nanometers, and doping content is 1.0 * 10
19/ cm3.
(4) in the above-mentioned side of going to carry on the back the knot processing of n type crystal silicon chip process, utilize pecvd process successively deposition intrinsic nanometer silicon layer 7 and n type nanometer silicon layer 8, the thickness of intrinsic nanometer silicon layer 7 and n type nanometer silicon layer 8 is 10 nanometers, and depositing temperature is controlled at about 200 ℃.
(5) at the tow sides of the n type crystal silicon chip of handling through above-mentioned steps, utilize sputtering technology to deposit positive TCO conductive film 2 and back side TCO conductive film 9, the thickness of TCO conductive film is 60nm～100nm, and square resistance is 20 Ω/.
(6) utilize the method for silk screen printing to print positive silver electrode 1 and back silver electrode 10 at last on above-mentioned double-edged TCO conductive film, low-temperature sintering is adopted in the printing of front and back electrode symmetry.
By above specific embodiments, be 154.8cm at area
2N type crystal silicon chip on prepare open circuit voltage U
Oc=654.2mV, operating voltage is 540mV, short circuit current I
Sc=5.323A, operating current are 4.885A, fill factor, curve factor FF=75.75%, the photovoltaic cell of photoelectric conversion efficiency η=17.04%.
The technological means that the present invention adopts is to prepare the concentration gradient knot on the crystalline silicon substrate material of battery, thereby form the thin resilient coating between Window layer material and the crystalline silicon substrate, the concentration gradient knot can be formed with renders a service the field, strengthened the interface electric field, it is compound to have reduced the interface in the battery, improve the carrier collection rate of battery, thereby improved the open circuit voltage of battery, fill factor, curve factor and photoelectric conversion efficiency; Overcome the discontinuous problem of HIT heterojunction battery interface electric field.Utilize nano silicon material, can effectively improve the problem of amorphous silicon material photo attenuation.
Claims (5)
1. nanometer silicon/crystalline silicon heterojunction photovoltaic cell is characterized in that: the laminated layer sequence of battery set gradually from top to bottom for: positive silver electrode, positive TCO conductive film, p type heavy doping nanometer silicon layer are p
+Layer, p type light dope nanometer silicon layer are that gently to spread crystal silicon layer be p for p layer, p type
-Layer, n type crystal silicon layer, intrinsic nanometer silicon layer are i layer, n type nanometer silicon layer, back side TCO conductive film, back silver electrode; Or positive silver electrode, positive TCO conductive film, n type heavy doping nanometer silicon layer are n
+Layer, n type light dope nanometer silicon layer are that gently to spread crystal silicon layer be n for n layer, n type
-Layer, p type crystal silicon layer, intrinsic nanometer silicon layer are i layer, p type nanometer silicon layer, back side TCO conductive film, back silver electrode, wherein doping content: p
+Layer＞p layer＞p
-Layer, n
+Layer＞n layer＞n
-Layer.
2. nanometer silicon/crystalline silicon heterojunction photovoltaic cell according to claim 1 is characterized in that: the energy gap of p type heavy doping nanometer silicon layer is 1.95ev～1.99ev.
3. nanometer silicon/crystalline silicon heterojunction photovoltaic cell according to claim 1 is characterized in that: p type light dope nanometer silicon layer is the graded bandgap of 1.97ev to 1.75ev.
4. nanometer silicon/crystalline silicon heterojunction photovoltaic cell according to claim 1 is characterized in that: described crystalline silicon substrate is CZ monocrystalline substrate, FZ monocrystalline substrate or polysilicon substrate, and the surface has suede structure.
5. nanometer silicon/crystalline silicon heterojunction photovoltaic cell according to claim 1 is characterized in that: the thickness of p type or n type light dope nanometer silicon layer and light diffusion crystal silicon layer is 9～11 nanometers.
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Cited By (10)
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|---|---|---|---|---|
| CN102569481A (en) * | 2012-02-01 | 2012-07-11 | 南开大学 | Nano silicon window layer with gradient band gap characteristic and preparation method thereof |
| CN102709340A (en) * | 2012-05-30 | 2012-10-03 | 浙江晶科能源有限公司 | Heterojunction solar cell of inclined metal contact structure based on N type silicon wafer |
| CN102709347A (en) * | 2012-05-30 | 2012-10-03 | 浙江晶科能源有限公司 | Heterojunction solar cell with buried grid structure |
| CN103035773A (en) * | 2011-09-30 | 2013-04-10 | 株式会社半导体能源研究所 | Photoelectric conversion device |
| CN103066147A (en) * | 2012-12-28 | 2013-04-24 | 浙江金贝能源科技有限公司 | Double PIN junction double-face solar battery of P type silicon substrate |
| CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
| CN103985778A (en) * | 2014-05-21 | 2014-08-13 | 常州天合光能有限公司 | Heterojunction solar cell with selective emitting electrode and manufacturing method thereof |
| CN107170850A (en) * | 2017-05-25 | 2017-09-15 | 君泰创新（北京）科技有限公司 | The preparation method and heterojunction solar battery of a kind of heterojunction solar battery |
| CN112151636A (en) * | 2020-08-21 | 2020-12-29 | 隆基绿能科技股份有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
| CN114628543A (en) * | 2020-11-27 | 2022-06-14 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and manufacturing method thereof |
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Cited By (16)
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| US9437768B2 (en) | 2011-09-30 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| CN103035773A (en) * | 2011-09-30 | 2013-04-10 | 株式会社半导体能源研究所 | Photoelectric conversion device |
| CN103035773B (en) * | 2011-09-30 | 2016-11-02 | 株式会社半导体能源研究所 | Photoelectric conversion device |
| CN102569481B (en) * | 2012-02-01 | 2014-04-02 | 南开大学 | Nano silicon window layer with gradient band gap characteristic and preparation method thereof |
| CN102569481A (en) * | 2012-02-01 | 2012-07-11 | 南开大学 | Nano silicon window layer with gradient band gap characteristic and preparation method thereof |
| CN102709340A (en) * | 2012-05-30 | 2012-10-03 | 浙江晶科能源有限公司 | Heterojunction solar cell of inclined metal contact structure based on N type silicon wafer |
| CN102709347A (en) * | 2012-05-30 | 2012-10-03 | 浙江晶科能源有限公司 | Heterojunction solar cell with buried grid structure |
| CN103066147A (en) * | 2012-12-28 | 2013-04-24 | 浙江金贝能源科技有限公司 | Double PIN junction double-face solar battery of P type silicon substrate |
| CN103066147B (en) * | 2012-12-28 | 2016-08-03 | 浙江金贝能源科技有限公司 | A kind of double PIN junction double-sided solar batteries of P-type silicon substrate |
| CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
| CN103985778B (en) * | 2014-05-21 | 2016-01-20 | 常州天合光能有限公司 | Heterojunction solar battery with selective emitter and preparation method thereof |
| CN103985778A (en) * | 2014-05-21 | 2014-08-13 | 常州天合光能有限公司 | Heterojunction solar cell with selective emitting electrode and manufacturing method thereof |
| CN107170850A (en) * | 2017-05-25 | 2017-09-15 | 君泰创新（北京）科技有限公司 | The preparation method and heterojunction solar battery of a kind of heterojunction solar battery |
| CN112151636A (en) * | 2020-08-21 | 2020-12-29 | 隆基绿能科技股份有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
| CN112151636B (en) * | 2020-08-21 | 2022-07-15 | 隆基绿能科技股份有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
| CN114628543A (en) * | 2020-11-27 | 2022-06-14 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and manufacturing method thereof |
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