CN102332504A - Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell - Google Patents
Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell Download PDFInfo
- Publication number
- CN102332504A CN102332504A CN201110091913A CN201110091913A CN102332504A CN 102332504 A CN102332504 A CN 102332504A CN 201110091913 A CN201110091913 A CN 201110091913A CN 201110091913 A CN201110091913 A CN 201110091913A CN 102332504 A CN102332504 A CN 102332504A
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- CN
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- Prior art keywords
- layer
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- solar cell
- silicon solar
- sih
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 51
- 230000008021 deposition Effects 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 20
- 239000002355 dual-layer Substances 0.000 abstract 2
- 238000005562 fading Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 4
- 239000003595 mist Substances 0.000 description 4
- 230000010307 cell transformation Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100919135A CN102332504B (en) | 2011-04-13 | 2011-04-13 | Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100919135A CN102332504B (en) | 2011-04-13 | 2011-04-13 | Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell |
Publications (2)
Publication Number | Publication Date |
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CN102332504A true CN102332504A (en) | 2012-01-25 |
CN102332504B CN102332504B (en) | 2013-04-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2011100919135A Active CN102332504B (en) | 2011-04-13 | 2011-04-13 | Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell |
Country Status (1)
Country | Link |
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CN (1) | CN102332504B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102820382A (en) * | 2012-09-04 | 2012-12-12 | 中国科学院微电子研究所 | Method for preparing p + doped layer and n + front surface field |
CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
CN106024919A (en) * | 2016-07-28 | 2016-10-12 | 东北大学 | Amorphous silicon thin-film solar cell and manufacturing method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1287690A (en) * | 1998-01-22 | 2001-03-14 | 时至准钟表股份有限公司 | Solar cell device and method of producing the same |
US6261862B1 (en) * | 1998-07-24 | 2001-07-17 | Canon Kabushiki Kaisha | Process for producing photovoltaic element |
JP3568047B2 (en) * | 1994-04-28 | 2004-09-22 | キヤノン株式会社 | Method of forming photovoltaic element |
CN101246927A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Photovoltaic application of amorphous germanium thin film |
CN101257052A (en) * | 2008-04-07 | 2008-09-03 | 南开大学 | Window material for silicon based thin film solar battery and preparing method thereof |
-
2011
- 2011-04-13 CN CN2011100919135A patent/CN102332504B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3568047B2 (en) * | 1994-04-28 | 2004-09-22 | キヤノン株式会社 | Method of forming photovoltaic element |
CN1287690A (en) * | 1998-01-22 | 2001-03-14 | 时至准钟表股份有限公司 | Solar cell device and method of producing the same |
US6261862B1 (en) * | 1998-07-24 | 2001-07-17 | Canon Kabushiki Kaisha | Process for producing photovoltaic element |
CN101246927A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Photovoltaic application of amorphous germanium thin film |
CN101257052A (en) * | 2008-04-07 | 2008-09-03 | 南开大学 | Window material for silicon based thin film solar battery and preparing method thereof |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102820382A (en) * | 2012-09-04 | 2012-12-12 | 中国科学院微电子研究所 | Method for preparing p + doped layer and n + front surface field |
CN102820382B (en) * | 2012-09-04 | 2016-01-20 | 中国科学院微电子研究所 | Method for preparing p + doped layer and n + front surface field |
CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
CN106024919A (en) * | 2016-07-28 | 2016-10-12 | 东北大学 | Amorphous silicon thin-film solar cell and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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CN102332504B (en) | 2013-04-10 |
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Application publication date: 20120125 Assignee: CHENGDU XUSHUANG SOLAR TECHNOLOGY Co.,Ltd. Assignor: TUNGHSU GROUP Co.,Ltd.|CHENGDU TAIYISI SOLAR TECHNOLOGY Co.,Ltd. Contract record no.: 2012990000882 Denomination of invention: Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell License type: Exclusive License Record date: 20121213 |
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Assignee: CHENGDU XUSHUANG SOLAR TECHNOLOGY Co.,Ltd. Assignor: TUNGHSU GROUP Co.,Ltd.|CHENGDU TAIYISI SOLAR TECHNOLOGY Co.,Ltd. Contract record no.: 2012990000882 Date of cancellation: 20140506 |
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Effective date of registration: 20140806 Address after: 050021 No. 94, Huitong Road, Hebei, Shijiazhuang Patentee after: TUNGHSU GROUP Co.,Ltd. Address before: 050021 No. 94, Huitong Road, Hebei, Shijiazhuang Patentee before: TUNGHSU GROUP Co.,Ltd. Patentee before: CHENGDU TAIYISI SOLAR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230630 Address after: 102200 201, floor 2, No. 2, yard 91, shashun Road, Changping District, Beijing Patentee after: Beijing Yuanda Xinda Technology Co.,Ltd. Address before: 050021 No. 94, Huitong Road, Hebei, Shijiazhuang Patentee before: TUNGHSU GROUP Co.,Ltd. |
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