CN102142469A - P type microcrystalline silicon carbon film material for PI flexible substrate solar cell and preparation - Google Patents
P type microcrystalline silicon carbon film material for PI flexible substrate solar cell and preparation Download PDFInfo
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Abstract
The invention relates to a P type microcrystalline silicon carbon film material for a PI flexible substrate solar cell and preparation, belonging to the field of a film solar cell in new energy. The thickness of the P type microcrystalline silicon carbon film material layer is 15-30nm, the conductance is 0.15S/cm-10S/cm, the band gap is more than 2.0eV, and the crystallization rate is 30%-50%. By the optimization research for changing the proportion of carbon doping, the photoelectric performance and the structural characteristics of the material are controlled. P type microcrystalline silicon carbon with high conductance and wide band gap is obtained by utilizing the effect that carbon atom introduction can increase the band gap of a silicon film. The invention has the beneficial effects that the P type microcrystalline silicon carbon material with wide band gap is used in the PI non-transparent flexible substrate amorphous silicon film solar cell and is combined with an optimized p/i buffer layer, the built-in electric field of the film solar cell can be obviously strengthened, the open-circuit voltage of the cell is increased, and therefore the amorphous silicon film solar cell with high photoelectric conversion efficiency is obtained.
Description
[technical field]
The present invention relates to new forms of energy thin film solar cell field, specifically, relate to silica-based doping film material field.
[background technology]
Than n type material, P type doped layer is because of the difficult preparation of its special doping characteristic. in present silicon-based thin film solar cell structure, the P type a-SiC:H of the employing optical band gap broad that has is as the Window layer of amorphous silicon solar cell, but its most conductivity are all lower. up to 2.5eV, dark attitude conductivity is about 10 according to the optical band gap of pertinent literature report P type a-SiC:H thin-film material
-6S/cm.P-type material than amorphous, P type microcrystal silicon (p-type μ c-Si:H) has higher conductivity, lower activation energy and light absorption, but as the battery Window layer, because its optical band gap is narrow, and and the intrinsic layer of amorphous between have structural mismatch.
[summary of the invention]
The object of the present invention is to provide a kind of PI flexible substrate solar cell P type microcrystal silicon carbon film material and preparation method, can improve the photoelectric conversion efficiency and the stability of solar cell simultaneously, further reduce manufacturing cost.
Technical scheme of the present invention:
A kind of PI flexible substrate solar cell P type microcrystal silicon carbon film material, bed thickness 15-30nm, electricity is led 0.15S/cm-10S/cm, and band gap is more than 2.0eV, and crystallization rate is 30%-50%.
The above-mentioned PI flexible substrate solar cell preparation method of P type microcrystal silicon carbon film material, this method may further comprise the steps:
1), will have the opaque flexible substrate of PI, Al back reflector layer, barrier layer, the brilliant N layer of receiving successively, amorphous/crystallite I layer,
Resilient coating is put into the high vacuum depositing system, and base vacuum is lower than 8.0 * 10
-4Pa;
2), to adopt plasma reinforced chemical meteorology deposition be the method deposition P type Window layer of PECVD, the aura driving frequency is 13.56MHz;
3), feed reacting gas and be: silane, hydrogen, methane and borine,
Or silane, hydrogen and trimethyl borine,
P type Window layer reactive deposition parameter is as follows:
Underlayer temperature is: 150-270 ℃;
Power density is: 200-400mW/cm
2
Reaction pressure is: 100-300Pa;
Silane concentration is: 0.55%-1.5%;
The trimethyl borine doping content is: 0.5-1.0%;
Borane doping concentration is: 0.5%-2%;
The methane doping content is: 7.5%-13.75%.
A kind of amorphous silicon film solar battery of making Window layer with P type crystallite silicon-carbon, by the opaque flexible substrate of PI, Al back reflector layer, barrier layer, the brilliant N layer of receiving, amorphous/crystallite I layer, p/i resilient coating, P type crystallite silicon-carbon Window layer and transparency conducting layer are formed successively; P bed thickness 15-30nm, electricity is led 0.15S/cm-10S/cm, and band gap is more than 2.0eV.
A kind ofly make the preparation method of the amorphous silicon film solar battery of Window layer, may further comprise the steps with P type crystallite silicon-carbon:
A, in the high vacuum depositing system, depositing Al back reflector layer, barrier layer, the brilliant N layer of receiving on the PI flexible substrate successively, amorphous/crystallite I layer, p/i resilient coating;
B, feeding reacting gas add the aura deposition and obtain required thin-film material, i.e. P type crystallite silicon-carbon Window layer;
C, deposit the required transparency conducting layer of battery at last.
Described deposition process is the plasma reinforced chemical vapour deposition of 13.65MHz～100MHz, perhaps microwave CVD, perhaps heated filament CVD.
Control methane incorporation obtains the P type crystallite silicon-carbon that high band gap and high electricity are led, and the relevant parameter scope is:
Underlayer temperature is: 150-270 ℃;
Power density is: 200-400mW/cm
2
Reaction pressure is: 100-300Pa;
Silane concentration is: 0.55%-1.5%;
Dopant is: trimethyl borine, and doping content is: 0.5-1.0%;
Or dopant is: borine and methane, doping content are respectively 0.5%-2% and 7.5%-13.75%.
Used substrate is opaque polyimides (PI) polymer, and deposit transparent conductive film T is (as ZnO, SnO on the substrate
2, SnO
2/ ZnO composite membrane etc.), back reflector Ag, Al, ZnO etc.
P type crystallite silicon-carbon (μ c-SiC:H) thin-film material is owing to introduced carbon atom, make material have broad-band gap, simultaneously the structures shape of crystallite its have higher conductivity, higher optical transmittance and carrier mobility, it is the more satisfactory window material of silicon-based thin film solar cell, use it for open circuit voltage and fill factor, curve factor that battery can effectively improve battery, thereby improve the photoelectric conversion efficiency of battery effectively.
The invention has the beneficial effects as follows: structure and controlled doping amount by control P type Window layer reach the broad-band gap of Window layer, high electricity is led, and satisfies the requirement of flexible substrate silicon based thin film solar battery.Carry out interface processing and heavily doped processing in the front and back of preparation P type Window layer simultaneously, the crystallization basis of establishing for the intrinsic micro crystal silicon active layer, the crystallization degree and the characteristic of convenient modulation intrinsic layer, and stop the diffuse pollution of dopant to intrinsic layer, and form ohmic contact, thereby the dual purpose that realizes improving the photoelectric conversion efficiency of battery and improve stability with conductive layer.
The preparation method of this new construction P type Window layer is different with conventional preparation method.On the basis of preparation P type non-crystal silicon carbon film, strengthen the hydrogen dilute strength and improve power density, pre-reaction material is fully decomposed, the crystallization degree of order improves, and makes dopant do displacement and mixes, and the electricity of film is led with band gap improve simultaneously.Except that borine and methane as the dopant, trimethyl borine also can be used as dopant and uses, and than the preceding two kinds of easier formation of dopant P type crystallite silicon carbon film.
[description of drawings]
Fig. 1: the structural representation of PI flexible substrate silicon based thin film solar battery.
[embodiment]
Below in conjunction with accompanying drawing the present invention is described in further detail: the silicon-based thin film solar cell of present embodiment, by the opaque flexible substrate of PI, Al back reflector layer, barrier layer, the brilliant N layer of receiving, amorphous/crystallite I layer, p/i resilient coating, P type crystallite silicon-carbon Window layer and transparency conducting layer are formed.
Embodiment 1
On the Eagle2000 glass substrate, adopt silane, hydrogen, borine, methane as reacting gas, by the PECVD method, the radio-frequency power source frequency is 13.56MHz, according to included step among the preparation method of thin film solar cell usefulness P type Window layer of the present invention, select deposition parameter, wherein response parameter is as described below:
Underlayer temperature: 150 ℃,
Power density: 350mW/cm2,
Reaction pressure: 200Pa,
Silane concentration: 0.55%,
Borane doping concentration: 0.5%,
Methane doping content: 7.5%.
The P type microcrystal silicon material with carbon element of preparation is under the precondition of 30nm at thickness, its conductivity 0.15S/cm, and band gap is greater than 2.0eV, and crystallization rate is 45.4%.
Embodiment 2
Underlayer temperature is fixed as 150 ℃, and power density is 350mW/cm
2. silane concentration is 0.55%, and borane doping concentration 0.5% is keeping under the constant condition of total gas flow rate, and carbon silicon is than (CH
4/ SiH
4) between 7.5%～13.75% scope, change, by adjusting the doping of methane, obtain dark attitude conductivity
dBe 0.15S/cm and optical band gap E
gP type microcrystal silicon material with carbon element more than 2.0eV is used for the opaque flexible substrate film battery of PI with it in conjunction with the carbon dope p/i resilient coating of optimizing and obtains open circuit voltage 0.87V, short-circuit current density 11.98mA/cm
2, fill factor, curve factor 54%, photoelectric conversion efficiency 5.67%.
To sum up obtain, P type crystallite silicon-carbon combines advantages such as the high electricity of the broad-band gap of P type non-crystal silicon carbon and P type microcrystal silicon is led, low light absorption; Be used for battery the lifting of cell photoelectric conversion efficiency is had significant effect.
Claims (6)
1. a PI flexible substrate solar cell is characterized in that with P type microcrystal silicon carbon film material: described P type microcrystal silicon carbon film material bed thickness 15-30nm, and electricity is led 0.15S/cm-10S/cm, and band gap is more than 2.0eV, and crystallization rate is 30%-50%.
2. a PI flexible substrate solar cell is characterized in that this method may further comprise the steps with the preparation method of P type microcrystal silicon carbon film material:
1), will have the opaque flexible substrate of PI, Al back reflector layer, barrier layer, the brilliant N layer of receiving successively, amorphous/crystallite I layer, p/i resilient coating are put into the high vacuum depositing system, base vacuum is lower than 8.0 * 10
-4Pa;
2), to adopt plasma reinforced chemical meteorology deposition be the method deposition P type Window layer of PECVD, the aura driving frequency is 13.56MHz;
3), feed reacting gas and be: silane, hydrogen, methane and borine,
Or silane, hydrogen and trimethyl borine,
P type Window layer reactive deposition parameter is as follows:
Underlayer temperature is: 150-270 ℃;
Power density is: 200-400mW/cm
2
Reaction pressure is: 100-300Pa;
Silane concentration is: 0.55%-1.5%;
The trimethyl borine doping content is: 0.5-1.0%;
Borane doping concentration is: 0.5%-2%;
The methane doping content is: 7.5%-13.75%.
3. amorphous silicon film solar battery of making Window layer with P type crystallite silicon-carbon, it is characterized in that: successively by the opaque flexible substrate of PI, Al back reflector layer, barrier layer, the brilliant N layer of receiving, amorphous/crystallite I layer, p/i resilient coating, P type crystallite silicon-carbon Window layer and transparency conducting layer are formed; P bed thickness 15-30nm, electricity is led 0.15S/cm-10S/cm, and band gap is more than 2.0eV.
4. make the preparation method of the amorphous silicon film solar battery of Window layer with P type crystallite silicon-carbon for one kind, it is characterized in that, may further comprise the steps:
A, in the high vacuum depositing system, depositing Al back reflector layer, barrier layer, the brilliant N layer of receiving on the PI flexible substrate successively, amorphous/crystallite I layer, p/i resilient coating;
B, feeding reacting gas add the aura deposition and obtain required thin-film material, i.e. P type crystallite silicon-carbon Window layer;
C, deposit the required transparency conducting layer of battery at last.
5. the preparation method who makes the amorphous silicon film solar battery of Window layer with P type crystallite silicon-carbon according to claim 4, it is characterized in that, described deposition process is the plasma reinforced chemical vapour deposition of 13.65MHz～100MHz, perhaps microwave CVD, perhaps heated filament CVD.
6. according to claim 4ly make the preparation method of the amorphous silicon film solar battery of Window layer with P type crystallite silicon-carbon, it is characterized in that, control methane incorporation obtains the P type crystallite silicon-carbon that high band gap and high electricity are led, and the relevant parameter scope is:
Underlayer temperature is: 150-270 ℃;
Power density is: 200-400mW/cm
2
Reaction pressure is: 100-300Pa;
Silane concentration is: 0.55%-1.5%;
Dopant is: trimethyl borine, and doping content is: 0.5-1.0%;
Or dopant is: borine and methane, doping content are respectively 0.5%-2% and 7.5%-13.75%.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437226A (en) * | 2011-12-13 | 2012-05-02 | 清华大学 | Carbon nanotube-silicon film laminated solar battery and preparation method thereof |
| CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
| CN104362183A (en) * | 2014-09-23 | 2015-02-18 | 南开大学 | Silicon carbon window layer film with refractive index gradient characteristics and application |
| CN111916783A (en) * | 2020-07-24 | 2020-11-10 | 浙江海晫新能源科技有限公司 | Method for reducing carbon-silicon contact resistance |
| CN114203851A (en) * | 2020-09-01 | 2022-03-18 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and method for producing a heterojunction solar cell |
| CN114481182A (en) * | 2022-01-28 | 2022-05-13 | 嘉善县登顶科技有限公司 | Amorphous silicon-carbon film photocathode for hydrogen production by solar water electrolysis, photoelectrode and preparation |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819274A (en) * | 2005-12-22 | 2006-08-16 | 南开大学 | Thin-film solar battery barrier with flexible substrate and production thereof |
| US20070209699A1 (en) * | 2006-03-08 | 2007-09-13 | National Science And Technology Development Agency | Thin film solar cell and its fabrication process |
| CN201045738Y (en) * | 2006-03-06 | 2008-04-09 | 胡宏勋 | Flexible amorphous silicon thin-film solar cell |
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2010
- 2010-12-01 CN CN2010105690664A patent/CN102142469A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819274A (en) * | 2005-12-22 | 2006-08-16 | 南开大学 | Thin-film solar battery barrier with flexible substrate and production thereof |
| CN201045738Y (en) * | 2006-03-06 | 2008-04-09 | 胡宏勋 | Flexible amorphous silicon thin-film solar cell |
| US20070209699A1 (en) * | 2006-03-08 | 2007-09-13 | National Science And Technology Development Agency | Thin film solar cell and its fabrication process |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437226A (en) * | 2011-12-13 | 2012-05-02 | 清华大学 | Carbon nanotube-silicon film laminated solar battery and preparation method thereof |
| CN102437226B (en) * | 2011-12-13 | 2013-12-11 | 清华大学 | Carbon nanotube-silicon film laminated solar battery and preparation method thereof |
| CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
| CN104362183A (en) * | 2014-09-23 | 2015-02-18 | 南开大学 | Silicon carbon window layer film with refractive index gradient characteristics and application |
| CN111916783A (en) * | 2020-07-24 | 2020-11-10 | 浙江海晫新能源科技有限公司 | Method for reducing carbon-silicon contact resistance |
| CN114203851A (en) * | 2020-09-01 | 2022-03-18 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and method for producing a heterojunction solar cell |
| CN114481182A (en) * | 2022-01-28 | 2022-05-13 | 嘉善县登顶科技有限公司 | Amorphous silicon-carbon film photocathode for hydrogen production by solar water electrolysis, photoelectrode and preparation |
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Application publication date: 20110803 |