CN102437226B - Carbon nanotube-silicon film laminated solar battery and preparation method thereof - Google Patents
Carbon nanotube-silicon film laminated solar battery and preparation method thereof Download PDFInfo
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- CN102437226B CN102437226B CN2011104145260A CN201110414526A CN102437226B CN 102437226 B CN102437226 B CN 102437226B CN 2011104145260 A CN2011104145260 A CN 2011104145260A CN 201110414526 A CN201110414526 A CN 201110414526A CN 102437226 B CN102437226 B CN 102437226B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 159
- 239000010703 silicon Substances 0.000 title claims abstract description 159
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 117
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 45
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 45
- 239000002238 carbon nanotube film Substances 0.000 claims abstract description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000013081 microcrystal Substances 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 103
- 239000010408 film Substances 0.000 claims description 50
- 238000003475 lamination Methods 0.000 claims description 37
- 239000012528 membrane Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 239000002109 single walled nanotube Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000002079 double walled nanotube Substances 0.000 claims description 3
- 239000002048 multi walled nanotube Substances 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 238000012360 testing method Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention discloses a carbon nanotube-silicon film laminated solar battery and a preparation method thereof. The laminated battery solar battery comprises a transparent underlay, a transparent conductive film, a silicon film layer, a carbon nanotube film and a back electrode, which are sequentially laminated, wherein the silicon film layer consists of at least two layers of silicon films, and silicon in the silicon film layer is amorphous silicon or microcrystal silicon; and the silicon film layer and the carbon nanotube film form a heterojunction. The silicon film can be a positive-negative (PN) double-layer film, a positive intrinsic negative (PIN) three-layer film, a negative positive negative (NPN) three-layer film or a negative positive intrinsic negative (NPIN) four-layer film. In the film laminated battery, the carbon nanotube is used as a P+ layer and forms a laminated battery having a CNT/P+-P/N structure with the silicon film, the carbon nanotube and the silicon film form a laminated battery with a CNT/P+-P/I/N structure, with a CNT/P+-N/P/N structure or with a CNT/P+-N/P/I/N structure. The carbon nanotube-silicon film laminated battery can effectively improve the open-circuit voltage, the conversion efficiency and the like of the battery, and has the characteristics of simple process and low cost.
Description
Technical field
The present invention relates to a kind of carbon nano-tube-silicon thin film lamination solar cell and preparation method thereof.
Background technology
Along with the appearance of energy crisis, people start to find the importance of regenerative resource, and regenerative resource becomes the problem that everybody more and more pays close attention to.Solar energy, as a kind of reproducible clean energy resource wherein, has obtained relevant application in every field.Wherein, the application of solar cell is particularly extensive, and currently marketed solar cell mainly be take silica-based as main.Silicon solar cell mainly is divided into monocrystalline silicon battery, three kinds of polycrystal silicon cell and amorphous (crystallite) silicon thin-film batteries, and wherein, silicon thin-film battery has that to make material consumption few, and area is large, makes energy consumption low, and cost is low, has obtained in recent years development rapidly.The photoelectric conversion efficiency of the mass-produced amorphous silicon thin-film solar cell of large tracts of land is 5～8% at present, and the open circuit voltage of its single-unit silicon thin-film battery is the 0.8V left and right.
Carbon nano-tube (Carbon nanotube, CNT) is the full carbon molecule of tubulose by one or more layers Graphene curlingly forms, diameter is nanometer scale.Carbon nano-tube is the black-materials that synthesize so far, has shown that carbon nano-tube absorbs the comparable existing all material of ability of sunlight all high.Carbon nano-tube can be transformed into electric energy by the luminous energy of absorption, in the inner light induced electron-hole pair that produces of carbon nano-tube.The people's such as Stewart DA theory is calculated and is shown, the quantum efficiency of carbon nano-tube opto-electronic conversion can reach 18% (Stewart DA, et al., Phys.Rev.Lett., 93:107401,2004; Nano Lett., 5:219,2005).The spectral region of the photoelectric respone of carbon nano-tube is very wide, can cover from ultraviolet light to infrared full spectral region.Wei advances congruent people and studies discovery (Wei et al., Small, 2:988,2006), carbon nano-tube macroscopic body has very strong photogenerated current and Auto-guide unit is, as the carbon nano-tube macroscopic body that diameter is 0.39mm, its photic electric current can reach the mA magnitude, and visible ray and infrared light district have been contained in the response interval of photic electric current.Show thus, carbon nano-tube can the excitation electron transition under the irradiation of incident light, causes separation and the migration of electron-hole pair, produces photo-generated carrier, thereby forms photoelectric current.Research also finds, when irradiation, in double-walled and multi-walled carbon nano-tubes junction or carbon nano-tube while tying with metal, the photic electric current of carbon nano-tube obviously strengthens (Sun JL, et al., Appl.Phys.Lett., 88:131107,2006).Show thus, if construct suitable carbon nanotube heterojunction, just likely increase substantially photoelectric current, form efficient solar cell.
The researcher has carried out the application study work of carbon nano-tube in fields such as inorganic heterogeneous solar cell, organic solar batteries and DSSC.Wei advances congruent people and utilizes p-type carbon nano-tube and N-shaped silicon, has built carbon nano-tube-silicon heterojunction solar battery solar cell.This seminar is combined carbon nano-tube film with N-shaped monocrystalline silicon, form heterojunction solar battery, its conversion efficiency 5～7% (Jia Y et al., Advanced Materials, 2008,20,4594-4598); And drip rare nitric acid or dilute sulfuric acid on heterojunction boundary, the conversion efficiency of carbon nano-tube-silicon heterogenous solar cell can be increased to 13.8% (Jia Y, et al., Nano Letters, 2011,11).In the structure of this carbon nano-tube-silicon heterogenous solar cell, sunlight incides the heterojunction surface from carbon nano-tube one side; Carbon nano-tube film all, both as the knot material of heterojunction, has served as again the top electrode of electrically conducting transparent.The equal patent applied for of these achievements in research or obtained the patent for invention mandate (patent No.: ZL200610169827.0).The researcher is also processed and is improved carbon nano-tube-silicon heterogenous solar cell with diverse ways in trial, further to improve battery efficiency.
In order to reduce the cost of solar cell, the researcher combines carbon nano-tube with silicon thin film, to form the heterojunction solar battery of carbon nano-tube-silicon thin film.People (the Gobbo SD such as Gobbo SD, et al., Applied Physics Letters 2011,98,183113) Single Walled Carbon Nanotube is distributed in solution, then with noncrystal membrane, be combined, formed heterojunction solar battery, but its performance is very low, open circuit voltage is 0.2～0.5V, conversion efficiency<0.1%, can't practical application.The hetero-junction solar cell that this battery is unijunction, and carbon nano-tube all is positioned at the upper surface of silicon thin film, sunlight first penetrates carbon nano-tube film, then just is radiated on silicon thin film, for sunlight is radiated on heterojunction as much as possible, carbon nano-tube film can not be too thick.
Summary of the invention
The purpose of this invention is to provide a kind of carbon nano-tube-silicon thin film lamination solar cell and preparation method thereof.Be intended to utilize the optics electric property of carbon nano-tube excellence to combine with silicon thin-film battery, to improve the conversion efficiency of solar cell, reduce the cost of manufacture of solar cell simultaneously.
Carbon nano-tube provided by the present invention-silicon thin film lamination solar cell, it comprises sequentially stacked: transparent substrates (5), transparent conductive film (4), silicon membrane layer (3), carbon nano-tube film (2) and back electrode (1); Wherein, described silicon membrane layer is comprised of at least two-layer silicon thin film, and silicon thin film wherein is amorphous silicon or microcrystal silicon.
Described carbon nano-tube film covers the silicon membrane layer top continuously, penetrates the sunlight of silicon thin film for absorption.And form hetero-junction solar cell with described silicon membrane layer, form lamination solar cell with multilayer silicon thin film knot simultaneously.
Silicon membrane layer in the present invention specifically can be selected from following any one: PN type silicon bi-layer film, three layers of silicon thin film of PIN type, three layers of silicon thin film of NPN type and four layers of silicon thin film of NPIN type.The thickness of described silicon membrane layer can be 0.2～2 μ m.
In the pellicular cascade battery, carbon nano-tube (CNT) is as P
+layer, form CNT/P with above-mentioned silicon thin film
+the laminated cell of-P/N structure, or CNT/P
+the laminated cell of-P/I/N structure, or CNT/P
+the laminated cell of-N/P/N structure, or CNT/P
+the laminated cell of-N/P/I/N structure.
In the present invention, carbon nano-tube film specifically can be single wall carbon nano-tube film, double-walled carbon nano-tube film or multi-wall carbon nano-tube film, and its thickness can be 0.05～2 μ m.This carbon nano-tube in solar cell of the present invention both as conductive film, also as the part of heterojunction, simultaneously also as important photoelectric conversion material.
In the present invention, transparent conductive film specifically can be indium tin oxide films, zinc oxide aluminum film, fluorine doped tin oxide or Graphene etc., and its thickness is 0.1～2 μ m.
Described transparent substrates can be made by rigid materials such as glass, also can be by the organic substance flexible material, as plastics, PET etc. are made.Described back electrode can be made by materials such as Al, Mo, Ag, Au, Graphenes.
Prepare the method for above-mentioned carbon nano-tube-silicon thin film lamination solar cell, comprise the steps:
1) evaporation transparent conductive film on transparent substrates, and draw with wire;
2) deposit successively N-type silicon thin film, P type silicon thin film on described transparent conductive film, form PN type silicon bi-layer film; Or deposit successively N-type silicon thin film, I type silicon thin film, P type silicon thin film on described transparent conductive film, form three layers of silicon thin film of PIN type; Or depositing successively N-type silicon thin film, P type silicon thin film, N-type silicon thin film on described transparent conductive film, form three layers of silicon thin film of NPN type; Or depositing successively N-type silicon thin film, I type silicon thin film, P type silicon thin film, N-type silicon thin film on described transparent conductive film, form three layers of silicon thin film of NPIN type;
3) carbon nano-tube film is transferred on described silicon thin film, forms laminated cell;
4) make back electrode on described carbon nano-tube film, and draw with wire, obtain described carbon nano-tube-silicon thin film lamination solar cell.
This carbon nano-tube-silicon thin film laminated cell can effectively improve open circuit voltage, conversion efficiency of battery etc., and it is simple to have technique, characteristics with low cost.
The present invention's invention combines carbon nano-tube film and multilayer silicon thin film, forms the laminated cell be comprised of carbon nano-tube-silicon thin film and silicon thin film itself.In this carbon nano-tube-silicon thin film laminated cell, sunlight is from silicon thin film one side incident, and carbon nano-tube film is as last light-absorption layer, so carbon nano-tube film can be thicker, fully to absorb sunlight.
The present invention compared with prior art, have the following advantages and outstanding effect: in the present invention, carbon nano-tube film used is a kind of fexible film, can be continuous spread into silicon film surface, form hetero-junction solar cell, form lamination solar cell with the multilayer silicon thin film, improved the open circuit voltage of battery.The carbon nano-tube film high conductivity, be conducive to the transmission of electric charge, can improve short circuit current.In addition, carbon nano-tube film has improved battery to infrared light, and the absorption of visible ray contributes to conversion efficiency improved by solar cell etc.This carbon nano-tube film-silicon thin film lamination solar cell, its open circuit voltage can reach 1.3V, and short circuit current can reach 17mA/cm
2, conversion efficiency can reach 7.0%, has broad application prospects.
The accompanying drawing explanation
Fig. 1 is carbon nano-tube film provided by the invention-silicon thin film lamination solar cell structural representation; In figure: the 1-back electrode; The 2-carbon nano-tube film; The silicon membrane layer of 3-PN structure; The 4-transparent conductive film; The 5-transparent substrates.
Fig. 2 is carbon nano-tube film provided by the invention-silicon thin film lamination solar cell structural representation; In figure: the 1-back electrode; The 2-carbon nano-tube film; The silicon membrane layer of 3-PIN structure; The 4-transparent conductive film; The 5-transparent substrates.
Fig. 3 is carbon nano-tube film provided by the invention-silicon thin film lamination solar cell structural representation; In figure: the 1-back electrode; The 2-carbon nano-tube film; The silicon membrane layer of 3-NPN structure; The 4-transparent conductive film; The 5-transparent substrates.
Fig. 4 is carbon nano-tube film provided by the invention-silicon thin film lamination solar cell structural representation; In figure: the 1-back electrode; The 2-carbon nano-tube film; The silicon membrane layer of 3-NPIN structure; The 4-transparent conductive film; The 5-transparent substrates.
Fig. 5 is that carbon nano-tube shifts the stereoscan photograph on silicon thin film.
The carbon nano-tube that Fig. 6 is embodiment 1 preparation-silicon thin film lamination solar cell is at standard sources (AM1.5,100mW/cm
2) the lower current density voltage curve of testing.
The carbon nano-tube that Fig. 7 is embodiment 2 preparations-silicon thin film lamination solar cell is at standard sources (AM1.5,100mW/cm
2) the lower current density voltage curve of testing.
The carbon nano-tube that Fig. 8 is embodiment 3 preparations-silicon thin film lamination solar cell is at standard sources (AM1.5,100mW/cm
2) the lower current density voltage curve of testing.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described, but the present invention is not limited thereto.
Experimental technique described in following embodiment, if no special instructions, be conventional method; Described reagent and material, if no special instructions, all can obtain from commercial channels.
The silicon thin film that the silicon thin film adopted in following embodiment can buy from market; Also can pass through the method preparations such as plasma enhanced chemical vapor deposition (PECVD) or physical vapour deposition (PVD) (PCVD).
Fig. 1 is a kind of carbon nano-tube of the present invention-silicon thin film lamination solar cell structural representation, and this solar cell comprises silicon membrane layer 3, carbon nano-tube film 2 and the back electrode 1 of transparent substrates 5, transparent conductive film 4, PN junction structure from bottom to up successively; First evaporation transparent conductive film 4 on transparent substrates 5, then deposit N-type silicon membrane layer, P type silicon membrane layer 3 successively, afterwards carbon nano-tube film 2 transferred on P type silicon thin film to evaporation back electrode 1.
The preparation and property of embodiment 1, carbon nano-tube-silicon thin film lamination solar cell detects
1) the thick indium tin oxide transparent conducting film of evaporation one deck 200nm on glass substrate, and draw with wire;
2) deposit successively the thick N-type amorphous silicon layer of 50nm by the plasma reinforced chemical vapour deposition method on transparent conductive film, 500nm thick I type amorphous silicon layer and the thick P type of 50nm amorphous silicon layer;
3) single wall carbon nano-tube film of thickness 200nm is spread on P type amorphous silicon layer, and make carbon nano-tube film and silicon thin film close contact;
4) the aluminium electrode that evaporation 20nm is thick on carbon nano-tube film, and draw with wire, carbon nano-tube-silicon thin film lamination solar cell obtained.
Performance test:
At standard sources (AM1.5,100mW/cm
2) lower test, the open circuit voltage that records prepared solar cell is 1.3V, short circuit current is 16.7mA/cm
2, photoelectric conversion efficiency is 7.0%.
The preparation and property of embodiment 2, carbon nano-tube-silicon thin film lamination solar cell detects
1) the thick indium tin oxide transparent conducting film of evaporation one deck 100nm on glass substrate;
2) deposit successively the thick N-type silicon membrane layer of 500nm, 10nm thick I type silicon membrane layer and the thick P type of 1500nm silicon membrane layer by the plasma reinforced chemical vapour deposition method on transparent conductive film;
3) single wall carbon nano-tube film of thickness 200nm is transferred on P type silicon layer;
4) the aluminium electrode that evaporation 20nm is thick on carbon nano-tube film, and draw with wire, carbon nano-tube-silicon thin film lamination solar cell obtained.
5) detect under ESEM and analyze
See accompanying drawing 5
Performance test:
At standard sources (AM1.5,100mW/cm
2) lower test, open circuit voltage is 1.1V, short circuit current is 11.1mA/cm
2, photoelectric conversion efficiency is 3.8%.
The preparation and property of embodiment 3, carbon nano-tube-silicon thin film lamination solar cell detects
1) the thick indium tin oxide transparent conducting film of evaporation one deck 200nm on glass substrate, and draw with wire;
2) deposit successively the thick N-type amorphous silicon layer of 100nm by the plasma reinforced chemical vapour deposition method on transparent conductive film, the thick I type of 800nm amorphous silicon layer, the thick N-type amorphous silicon layer of 100nm thick P type amorphous silicon layer and 50nm;
3) single wall carbon nano-tube film of thickness 300nm is spread on the N-type amorphous silicon layer, and make carbon nano-tube film and silicon thin film close contact;
4) the aluminium electrode that evaporation 50nm is thick on carbon nano-tube film, and draw with wire, carbon nano-tube-silicon thin film lamination solar cell obtained.
Performance test:
At standard sources (AM1.5,100mW/cm
2) lower test, the open circuit voltage that records prepared solar cell is 1.6V, short circuit current is 4.6mA/cm
2, conversion efficiency is 5.7%.
Claims (9)
1. carbon nano-tube-silicon thin film lamination solar cell, it comprises sequentially stacked: transparent substrates, transparent conductive film, silicon membrane layer, carbon nano-tube film and back electrode, it is characterized in that: described silicon membrane layer is comprised of at least two-layer silicon thin film, and the silicon in described silicon membrane layer is amorphous silicon or microcrystal silicon; Described silicon membrane layer and described carbon nano-tube film form heterojunction.
2. carbon nano-tube according to claim 1-silicon thin film lamination solar cell is characterized in that: described silicon membrane layer be selected from following any one: PN type silicon bi-layer film, three layers of silicon thin film of PIN type, three layers of silicon thin film of NPN type and four layers of silicon thin film of NPIN type; The thickness of described silicon membrane layer is 0.2～2 μ m.
3. carbon nano-tube according to claim 2-silicon thin film lamination solar cell, it is characterized in that: described silicon membrane layer is PN type silicon bi-layer film, the P layer in described PN type silicon bi-layer film is combined with described carbon nano-tube film and is formed CNT/P
+the lamination solar cell of-P/N structure.
4. carbon nano-tube according to claim 2-silicon thin film lamination solar cell, it is characterized in that: described silicon membrane layer is three layers of silicon thin film of PIN type, the P layer in three layers of silicon thin film of described PIN type is combined with described carbon nano-tube film and is formed CNT/P
+the lamination solar cell of-P/I/N structure.
5. carbon nano-tube according to claim 2-silicon thin film lamination solar cell, it is characterized in that: described silicon membrane layer is three layers of silicon thin film of NPN type, the N layer in three layers of silicon thin film of described NPN type is combined with described carbon nano-tube film and is formed CNT/P
+the lamination solar cell of-N/P/N structure.
6. carbon nano-tube according to claim 2-silicon thin film lamination solar cell, it is characterized in that: described silicon membrane layer is four layers of silicon thin film of NPIN type, the N layer in four layers of silicon thin film of described NPIN type is combined with described carbon nano-tube film and is formed CNT/P
+the lamination solar cell of-N/P/I/N structure.
7. according to the described carbon nano-tube of any one in claim 1-6-silicon thin film lamination solar cell, it is characterized in that: described carbon nano-tube film is single wall carbon nano-tube film, double-walled carbon nano-tube film or multi-wall carbon nano-tube film, and its thickness is 0.05～2 μ m.
8. according to the described carbon nano-tube of any one in claim 1-6-silicon thin film lamination solar cell, it is characterized in that: described transparent conductive film is indium tin oxide films, zinc oxide aluminum film, fluorine doped tin oxide film or graphene film, and its thickness is 0.1～2 μ m; Described transparent substrates is made by rigid material or flexible material; Described back electrode is made by Al, Mo, Ag, Au or Graphene.
9. prepare the method for the described carbon nano-tube of any one-silicon thin film lamination solar cell in claim 2-8, comprise the steps:
1) evaporation transparent conductive film on transparent substrates, and draw with wire;
2) deposit successively N-type silicon thin film, P type silicon thin film on described transparent conductive film, form PN type silicon bi-layer film; Or deposit successively N-type silicon thin film, I type silicon thin film, P type silicon thin film on described transparent conductive film, form three layers of silicon thin film of PIN type; Or depositing successively N-type silicon thin film, P type silicon thin film, N-type silicon thin film on described transparent conductive film, form three layers of silicon thin film of NPN type; Or depositing successively N-type silicon thin film, I type silicon thin film, P type silicon thin film, N-type silicon thin film on described transparent conductive film, form three layers of silicon thin film of NPIN type;
3) carbon nano-tube film is transferred on described silicon thin film, forms laminated cell;
4) make back electrode on described carbon nano-tube film, and draw with wire, obtain described carbon nano-tube-silicon thin film lamination solar cell.
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| CN102437226B (en) * | 2011-12-13 | 2013-12-11 | 清华大学 | Carbon nanotube-silicon film laminated solar battery and preparation method thereof |
| CN104269447B (en) * | 2014-09-19 | 2016-06-22 | 无锡赛晶太阳能有限公司 | A kind of polysilicon solar cell plate |
| CN105655433A (en) * | 2016-04-13 | 2016-06-08 | 黄广明 | Crystalline silicon/amorphous silicon two-section solar cell and production method thereof |
| CN106449815A (en) * | 2016-08-11 | 2017-02-22 | 上海大学 | Heterojunction solar cell device production method based on amorphous silicon thin films |
| CN108074992A (en) * | 2016-11-18 | 2018-05-25 | 清华大学 | It is a kind of using carbon nanomaterial film as the crystal silicon solar energy battery of hetero-junctions back surface field |
| CN112786715B (en) * | 2019-11-08 | 2022-11-22 | 清华大学 | Solar cell |
| CN111188058B (en) * | 2020-02-10 | 2021-02-19 | 桂林电子科技大学 | System for producing hydrogen by full-film silicon semiconductor double-electrode unbiased photoelectrocatalysis full-decomposition of water and application thereof |
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| CN101794841A (en) * | 2010-03-03 | 2010-08-04 | 上海交通大学 | Solar cell preparation method based on carbon nano tube synergy |
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| CN100405617C (en) * | 2006-12-29 | 2008-07-23 | 清华大学 | Carbon nano tube film-based solar energy battery and its preparing method |
| EP2432027A4 (en) * | 2009-04-30 | 2017-06-28 | Industry-University Cooperation Foundation Hanyang University | Silicon solar cell comprising a carbon nanotube layer |
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