CN101369610A - Novel structural silicon nanometer line solar battery - Google Patents
Novel structural silicon nanometer line solar battery Download PDFInfo
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- CN101369610A CN101369610A CNA2008102113598A CN200810211359A CN101369610A CN 101369610 A CN101369610 A CN 101369610A CN A2008102113598 A CNA2008102113598 A CN A2008102113598A CN 200810211359 A CN200810211359 A CN 200810211359A CN 101369610 A CN101369610 A CN 101369610A
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Abstract
The invention discloses a novel structural silicon nano-wire solar cell, in particular to a silicon nano-wire array solar cell device, belonging to the technical field of a nanometer material and a new energy. The invention is characterized in that a three-dimensional heterojunction layer of p-type silicon nano-wire/ i-type amorphous silicon film/ n-type amorphous silicon film is included between the transparent tin indium oxide conductive film layer and the P-type silicon substrate layer. The solar energy converter comprises the following layers overlapped in sequence: a Ti/Pd/Ag gate electrode as a facade extraction electrode; a transparent ITO conductive film layer with a light transmission function and as a facade extraction electrode; an n-type amorphous silicon film layer positioned above an i-type amorphous silicon film which is above a p-type silicon nano-wire layer above the P-type silicon substrate layer; an n-i-p heterojunction formed by the n-type amorphous silicon film layer, the i-type amorphous silicon film and the p-type silicon nano-wire layer; a P-type silicon substrate layer as a base area of the solar cell; and an aluminum metal film back electrode as a back extraction electrode. The novel structural solar conversion device provided by the invention has strong optical absorptivity and high photoelectric conversion efficiency.
Description
Technical field
The present invention relates to a kind of novel silicon nanometer wire solar cell apparatus, belong to nano material and technical field of new energies.
Background technology
In the face of the continuous deterioration of global energy shortage crisis and biological environment, countries in the world active research and development and use regenerative resource, thus realize the sustainable development of energy industry and society.If the solar energy of earth surface 0.1% is transferred to electric energy, number turnover 5%, annual energy output can reach 5.6 * 10
12Kilowatt-hour, be equivalent at present 40 times of energy consumption in the world.Thereby solar energy is considered to the best solution route of the energy crisis and the deterioration of the ecological environment.
Solar cell is the device that directly luminous energy is changed into electric energy by photovoltaic effect of semiconductor p-n junction (photovoltaic effect) or Photochemical effects.The commercialization solar cell is based on monocrystalline silicon and amorphous silicon at present.Current, people except that widely applying single crystal silicon solar cell [referring to patent: patent No. JP5243597-A; Patent No. KR2002072736-A], also succeeded in developing polycrystal silicon cell [referring to patent: patent No. US5949123-A], amorphous silicon battery [referring to patent: patent No. JP2002124689-A; Patent No. US6307146-B1], various novel batteries [referring to patent: patent No. JP2002198549-A] such as thin film solar cell, and the solar cell of constantly developing various new materials, new construction again is [referring to patent: patent No. DE19743692-A; DE19743692-A1].In several hull cells, the amorphous silicon film solar battery development in recent years is rapid, and its major advantage is the production efficiency height, and cost is low.But amorphous silicon is because the existence of the unsteadiness of its internal structure and a large amount of hydrogen atoms, has light fatigue effect (Staebler-Wronski effect), so non-crystal silicon solar cell is through the long-term working stability existing problems, its photoelectric conversion efficiency can decay along with the continuity of light application time.The research work of polycrystalline silicon thin film solar cell has developed [referring to patent: patent No. JP2002222975-A] rapidly since 1987, become the new focus of World Focusing.Polycrystalline silicon thin film solar cell is because employed silicon amount is few far beyond monocrystalline silicon, inefficiency attenuation problem again, and might on the inexpensive substrate material, prepare, its cost expection will be far below the bulk single crystal si battery, and laboratory efficient also improves rapidly.
In the solar cell research and development contest of the low-cost high conversion efficiency of the third generation, nanometer technology has occurred as a kind of new method of building better solar cell, monodimension nanometer material is applied to can greatly improve photoelectric conversion efficiency on the solar cell, is expected to bring revolutionary variation for the development of green energy resource.The Yang Peidong professor seminar of California, USA university in 2005 adopts the anode material of One-Dimensional ZnO nano wire as solar cell first, the photoelectric conversion efficiency of this battery can reach 1.5%[M.Law, L.E.Greene, J.C.Johnson, et al.Nanowire dye-sensitized solar cells.Nature Materials 2005,4,455-459.].2007, the people such as Kamat of U.S. University of Notre Dame are adsorbed in the nano particle of titanium dioxide on the single wall formula CNT (carbon nano-tube), utilize CNT (carbon nano-tube) to guide flowing of photoproduction electric charge carrier, make the easier arrival electrode of electric charge become electric current, found that the solar cell ultraviolet light is converted to the efficient of electric current for only using the twice [A.Kongkanand of titanium dioxide, R.M.Dom í nguez, P.V.Kamat, Single Wall Carbon Nanotube Scaffolds for Photoelectrochemical SolarCells.Capture and Transport ofPhotogenerated Electrons Nano Letter 2007,7,676-680.].Compare with other semi-conducting material, silicon materials content is abundant and cheap, and simultaneously with present semiconductor microactuator processing technology compatibility, therefore the solar cell based on silicon nanostructure just is being subjected to increasing attention.
Recently we on the basis of preparation bulk silicon nano wire and array thereof [referring to Chinese patent CN1382626; Chinese patent application numbers 2005100117533; Kuiqing Peng, Mingliang Zhang, Aijiang Lu, NingBew Wong, Ruiqin Zhang, Shuit-Tong Lee.Ordered Si nanowire arrays via Nanosphere Lithography andMetal-induced etching.Applied Physics Letters 2007,90,163123], developed a kind of method for preparing large-area ordered silicon nanowire, this technology does not need high temperature and complex device, can prepare large tracts of land diameter homogeneous and arrange orderly silicon nanowire and array thereof near room temperature.The light absorption experiment of large-area ordered silicon nanowires shows that it has good antireflective and absorbing properties, and this mainly is because of silicon chip surface because the huge specific area of nano-structured formation causes.On this basis, we have designed a kind of silicon nano line/non crystal heterogeneous agglomeration solar battery device of silicon nanowires based on our preparation.Traditional relatively silicon solar cell, silicon nano line/non crystal heterogeneous agglomeration solar battery are the representatives of solar cell of new generation.
Summary of the invention
The present invention seeks to design and provide a kind of to have new structure and light absorpting ability is strong, the silicon nanometer line solar conversion equipment that photoelectric conversion efficiency is high.
The silicon nanowire array device for converting solar energy that the present invention proposes, it contains Ti/Pd/Ag grid electrode, transparent indium tin oxide (ITO) membrane of conducting layer, n type amorphous silicon membrane layer, i type amorphous silicon membrane layer, p type silicon nanowire layer, p type silicon substrate layer, aluminum metal film dorsum electrode layer, it is characterized in that: described device for converting solar energy contains folded mutually successively following each layer
(1) Ti/Pd/Ag grid electrode is positioned on the transparent ITO conductive membrane layer, and its effect is as the front extraction electrode;
(2) transparent IT0 conductive membrane layer is positioned on the n type amorphous silicon layer, as the front extraction electrode;
(3) n type amorphous silicon layer is positioned on the i type amorphous silicon layer, and its effect is to form the n-i-p heterojunction with i type amorphous silicon layer and p type silicon nanowire layer, produces photovoltaic effect;
(4) i type amorphous silicon is positioned on the p type silicon nanowire layer, and its effect is to form the n-i-p heterojunction with n type amorphous silicon layer and p type silicon nanowire layer, produces photovoltaic effect;
(5) p type silicon nanowire layer is positioned on the P type silicon substrate layer, and its effect is to form the n-i-p heterojunction with n type amorphous silicon layer and i type amorphous silicon layer, produces photovoltaic effect;
(6) P type silicon substrate layer is positioned on the aluminum metal film back electrode, and its effect is the base as solar cell;
(7) aluminum metal film back electrode, its effect are as back side extraction electrode.
The present invention at first goes out the nano linear carbon array of large tracts of land controllable size at first with the silicon nanowire of our invention and the preparation method of array thereof in P type silicon chip surface preparation.Adopt the plasma enhanced chemical vapor deposition technology to deposit i type and n type amorphous silicon membrane in succession subsequently, form three-dimensional n-i-p heterojunction at p type silicon nanowires and array surface thereof.Collect photo-generated carrier and the projected current that the n-i-p heterojunction produces for maximal efficiency, utilize magnetron sputtering technique at n type amorphous silicon membrane surface deposition tin indium oxide (ITO) transparent conductive film; And then on the ITO conductive film, prepare Ti/Pd/Ag grid shape Ohm contact electrode with mask method.With vacuum vapour deposition at the silica-based bottom surface of P type plated metal aluminium, behind the sintering as back side Ohm contact electrode.On the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon nanometer line solar battery of a monolithic.
Description of drawings
Fig. 1 is a silicon nanowires solar battery structure schematic diagram of the present invention.
1 grid shape Ti/Pd/Ag electrode layer
2 transparent indium tin oxide (ITO) conductive membrane layer
3n type hydrogenated amorphous silicon layer
4i type amorphous silicon layer
5p type nano linear carbon array layer
6p type silicon substrate layer
7 aluminum metal film dorsum electrode layers
Embodiment
The preparation method of the nano linear carbon array that the present invention at first proposes with us, at first after P type silicon chip surface preparation goes out the nano linear carbon array of large tracts of land controllable size, with vacuum vapour deposition at the silica-based bottom surface of P type plated metal aluminium film, behind the sintering as back side Ohm contact electrode.Adopt the plasma enhanced chemical vapor deposition technology to deposit i type and n type amorphous silicon membrane layer in succession subsequently, form radially n-i-p heterojunction of three-dimensional at p type silicon nanowires and array surface thereof.Utilize magnetron sputtered deposition technology at n type amorphous silicon surfaces deposition indium oxide layer tin (ITO) transparent conductive film; Use again mask method at ITO conductive film surface deposition Ti/Pd/Ag as the front Ohm contact electrode, thereby form a novel silicon nanowire array device for converting solar energy.On the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon nano line/non crystal heterogeneous agglomeration solar battery of a monolithic.
Claims (1)
1. novel structural silicon nanometer line solar battery, it contains Ti/Pd/Ag grid electrode, transparent indium tin oxide (ITO) conductive layer, n type amorphous silicon membrane layer, i type amorphous silicon membrane layer, p type silicon nanowire layer, p type silicon substrate layer, aluminum metal film dorsum electrode layer, it is characterized in that: described device for converting solar energy contains folded mutually successively following each layer
(1) Ti/Pd/Ag grid electrode is positioned on the transparent ITO conductive membrane layer, as the front extraction electrode;
(2) transparent ITO conductive membrane layer is positioned on the n type amorphous silicon membrane layer, as the front extraction electrode;
(3) n type amorphous silicon membrane layer is positioned on the i type amorphous silicon membrane layer, and its effect is to form the n-i-p heterojunction with i type amorphous silicon membrane layer and p type silicon nanowire layer, produces photovoltaic effect;
(4) i type amorphous silicon membrane layer is positioned on the p type silicon nanowire layer, and its effect is to form the n-i-p heterojunction with n type amorphous silicon membrane layer and p type silicon nanowire layer, produces photovoltaic effect;
(5) p type silicon nanowire layer is positioned on the P type silicon substrate layer, and its effect is to form the n-i-p heterojunction with n type amorphous silicon membrane layer and i type amorphous silicon membrane layer, produces photovoltaic effect;
(6) P type silicon substrate layer is positioned on the aluminum metal film back electrode, and its effect is the base as solar cell;
(7) aluminum metal film back electrode, its effect are as back side extraction electrode.
Be primarily characterized in that and contain the three-dimensional n-i-p heterojunction layer that p type silicon nanowire/i type amorphous silicon membrane layer/n type amorphous silicon membrane layer forms between transparent ITO conductive film (2) and the P type silicon substrate layer (6).
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| CNA2008102113598A CN101369610A (en) | 2008-09-23 | 2008-09-23 | Novel structural silicon nanometer line solar battery |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148279A (en) * | 2011-01-15 | 2011-08-10 | 郑州大学 | Solar battery based on II-VI group compound semiconductor/silicon nanoporous pillar array and preparation method therefor |
| CN102201465A (en) * | 2010-03-26 | 2011-09-28 | 北京师范大学 | Photovoltaic solar energy cell of silicon micro-nano structure |
| CN102376817A (en) * | 2010-08-11 | 2012-03-14 | 王浩 | Method for preparing semiconductor photoelectric device |
| CN102931292A (en) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | Novel manufacturing process capable of effectively improving generating efficiency of amorphous silicon thin film solar cell |
| CN101820006B (en) * | 2009-07-20 | 2013-10-02 | 湖南共创光伏科技有限公司 | High-conversion rate silicon-based unijunction multi-laminate PIN thin-film solar cell and manufacturing method thereof |
| CN103378183A (en) * | 2013-07-02 | 2013-10-30 | 国电光伏有限公司 | Double-faced light-transmission nanwire texture heterogeneous junction solar battery and manufacturing method thereof |
| CN103779448A (en) * | 2014-02-26 | 2014-05-07 | 中国科学院大学 | Silicon nanowire radial heterojunction solar battery manufacture method |
| CN104064619A (en) * | 2014-06-03 | 2014-09-24 | 苏州大学 | Microcrystalline silicon amorphous silicon radial double-junction nanowire solar cell |
| CN104091850A (en) * | 2014-06-03 | 2014-10-08 | 苏州大学 | Amorphous silicon nanowire microcrystalline silicon thin film double-junction solar cell |
| CN104538476A (en) * | 2015-01-21 | 2015-04-22 | 中电投西安太阳能电力有限公司 | Silicon nano-wire suede based heterojunction solar battery and preparation method thereof |
| CN104538470A (en) * | 2015-01-21 | 2015-04-22 | 中电投西安太阳能电力有限公司 | Silicon nanowire array based solar battery and preparation method thereof |
| CN104868019A (en) * | 2015-04-13 | 2015-08-26 | 北京工业大学 | Laser etching grid a-Si/c-Si radial heterojunction battery and preparation method thereof |
| CN105280747A (en) * | 2015-07-15 | 2016-01-27 | 常州天合光能有限公司 | Novel heterojunction solar cell and preparation method thereof |
| CN105789346A (en) * | 2016-04-13 | 2016-07-20 | 黄广明 | Solar cell based on silicon nanowires |
| CN106784114A (en) * | 2016-12-16 | 2017-05-31 | 上海电机学院 | A kind of thin film silicon crystalline silicon laminate solar photovoltaic cell based on silicon nanowires |
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2008
- 2008-09-23 CN CNA2008102113598A patent/CN101369610A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101820006B (en) * | 2009-07-20 | 2013-10-02 | 湖南共创光伏科技有限公司 | High-conversion rate silicon-based unijunction multi-laminate PIN thin-film solar cell and manufacturing method thereof |
| CN102201465A (en) * | 2010-03-26 | 2011-09-28 | 北京师范大学 | Photovoltaic solar energy cell of silicon micro-nano structure |
| CN102376817A (en) * | 2010-08-11 | 2012-03-14 | 王浩 | Method for preparing semiconductor photoelectric device |
| CN102148279A (en) * | 2011-01-15 | 2011-08-10 | 郑州大学 | Solar battery based on II-VI group compound semiconductor/silicon nanoporous pillar array and preparation method therefor |
| CN102931292A (en) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | Novel manufacturing process capable of effectively improving generating efficiency of amorphous silicon thin film solar cell |
| CN103378183A (en) * | 2013-07-02 | 2013-10-30 | 国电光伏有限公司 | Double-faced light-transmission nanwire texture heterogeneous junction solar battery and manufacturing method thereof |
| CN103779448A (en) * | 2014-02-26 | 2014-05-07 | 中国科学院大学 | Silicon nanowire radial heterojunction solar battery manufacture method |
| CN103779448B (en) * | 2014-02-26 | 2016-02-17 | 中国科学院大学 | The preparation method of the radial heterojunction solar cell of a kind of silicon nanowires |
| CN104091850A (en) * | 2014-06-03 | 2014-10-08 | 苏州大学 | Amorphous silicon nanowire microcrystalline silicon thin film double-junction solar cell |
| CN104064619A (en) * | 2014-06-03 | 2014-09-24 | 苏州大学 | Microcrystalline silicon amorphous silicon radial double-junction nanowire solar cell |
| CN104064619B (en) * | 2014-06-03 | 2016-10-26 | 苏州大学 | Microcrystalline silicon amorphous silicon radial double-junction nanowire solar cell |
| CN104538476A (en) * | 2015-01-21 | 2015-04-22 | 中电投西安太阳能电力有限公司 | Silicon nano-wire suede based heterojunction solar battery and preparation method thereof |
| CN104538470A (en) * | 2015-01-21 | 2015-04-22 | 中电投西安太阳能电力有限公司 | Silicon nanowire array based solar battery and preparation method thereof |
| CN104868019A (en) * | 2015-04-13 | 2015-08-26 | 北京工业大学 | Laser etching grid a-Si/c-Si radial heterojunction battery and preparation method thereof |
| CN105280747A (en) * | 2015-07-15 | 2016-01-27 | 常州天合光能有限公司 | Novel heterojunction solar cell and preparation method thereof |
| CN105280747B (en) * | 2015-07-15 | 2017-10-27 | 常州天合光能有限公司 | A kind of heterojunction solar battery and preparation method thereof |
| CN105789346A (en) * | 2016-04-13 | 2016-07-20 | 黄广明 | Solar cell based on silicon nanowires |
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