CN102931292A - Novel manufacturing process capable of effectively improving generating efficiency of amorphous silicon thin film solar cell - Google Patents
Novel manufacturing process capable of effectively improving generating efficiency of amorphous silicon thin film solar cell Download PDFInfo
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- CN102931292A CN102931292A CN2011102294044A CN201110229404A CN102931292A CN 102931292 A CN102931292 A CN 102931292A CN 2011102294044 A CN2011102294044 A CN 2011102294044A CN 201110229404 A CN201110229404 A CN 201110229404A CN 102931292 A CN102931292 A CN 102931292A
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- amorphous silicon
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- film solar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention aims to provide a novel manufacturing process capable of effectively improving the generating efficiency of an amorphous silicon thin film solar cell. By the technical method, the traditional P-type amorphous silicon is replaced by P-type microcrystalline silicon, and an amorphous silicon semiconductor layer with a wide energy gap is additionally arranged between a P-type microcrystalline silicon semiconductor layer and an intrinsic semiconductor layer, so that high generating efficiency can be achieved.
Description
Affiliated technical field
The present invention is about a kind of Novel processing that can effectively promote the amorphous silicon thin-film solar cell generating efficiency, and its purpose system will promote the generating efficiency of amorphous silicon thin-film solar cell.
Background technology
Because energy prices are surging, all parts of the world is sought the green energy resource that substitutes all again, and non-crystal silicon solar cell namely is a kind of efficient green energy resource that sunlight is converted to electric energy.
At present, industry adopts traditional amorphous silicon PIN stack architecture processing procedure to make solar cell mostly, but this mode still has the shortcoming of low generating efficiency to exist, and it is to cause the solar cell selling at exorbitant prices, the large factor during effectively universalness is applied to live.
Summary of the invention
Main purpose of the present invention is a kind of Novel processing that can effectively promote the amorphous silicon thin-film solar cell generating efficiency, its structure of this technical method utilizes P layer microcrystal silicon to replace traditional P layer amorphous silicon, and the amorphous silicon semiconductor layer that increases the wide energy gap of one deck is between P type microcrystalline silicon semiconductor layer and essential type semiconductor layer, and its purpose is to obtain higher generating efficiency.
A kind of Novel processing that can effectively promote the amorphous silicon thin-film solar cell generating efficiency is characterized in that, has comprised:
One transparent glass substrate;
One first transparency conducting layer is positioned on this transparency conducting layer;
One P type microcrystalline silicon semiconductor layer is positioned on this first transparency conducting layer;
One wide energy gap amorphous silicon semiconductor layer is positioned on this P type dimension polycrystal semiconductor layer;
One essential type semiconductor layer is positioned on this wide energy gap amorphous silicon semiconductor layer;
One N-type amorphous silicon semiconductor layer is positioned on this essence type semiconductor layer;
One second transparency conducting layer is positioned on this N-type amorphous silicon semiconductor layer;
One outer transparent glass substrate is positioned on this second transparency conducting layer.
Wherein, the glass substrate of this transparent glass substrate material selection superelevation penetration is to increase the ratio of incident light.
Wherein, this P type microcrystalline silicon semiconductor layer replaces traditional P type amorphous silicon semiconductor layer.
Wherein, this wide energy gap amorphous silicon semiconductor layer for newly increasing processing procedure, can more effectively increase electronics in the solar cell and the combination in electric hole.
Make comparisons with traditional non-crystal silicon solar cell technology, effective benefit that the present invention has is:
Novel amorphous silicon thin film solar cell processing procedure used in the present invention has comprised transparent glass substrate, the first transparency conducting layer, P type microcrystalline silicon semiconductor layer, wide energy gap amorphous silicon semiconductor layer, essential type semiconductor layer, N-type amorphous silicon semiconductor layer, the second transparency conducting layer and outer transparent glass substrate.Utilize P type microcrystalline silicon semiconductor layer and wide energy gap amorphous silicon semiconductor layer, effectively promote the right combination of electronics and electric hole, and then effectively promote the efficient of amorphous silicon thin-film solar cell, and reduce production costs and reach the purpose that accords with the demands of the market.
Embodiment
Hereby the present invention is cooperated accompanying drawing, is described in detail as follows:
With reference to figure one, it is the flow chart that the present invention can effectively promote the Novel processing of amorphous silicon thin-film solar cell generating efficiency.
With reference to figure two, be the new structure figure of amorphous silicon thin-film solar cell of the present invention, wherein comprised transparent glass substrate 1, the first transparency conducting layer 2, P type microcrystalline silicon semiconductor layer 3, wide energy gap amorphous silicon semiconductor layer 4, essential type semiconductor layer 5, N-type amorphous silicon semiconductor layer 6, the second transparency conducting layer 7 and outer transparent glass substrate 8.
For efficient that can the Effective Raise amorphous silicon thin-film solar cell, its light absorbing zone sequentially storehouse is as follows: P type microcrystalline silicon semiconductor layer 3, wide energy gap amorphous silicon semiconductor layer 4, essential type semiconductor layer 5 and N-type amorphous silicon semiconductor layer 6.When solar light irradiation during in the PN junction, have part of atoms and obtain energy, and then formation free electron, and the atom that loses electronics will form electric hole, attracts respectively electronics and electric hole by P type and N type semiconductor, and positive electricity and negative electricity are separated, therefore form a potential difference at the two ends of PN junction, then connect circuit at conductive layer, make electronics can by and at the other end of PN junction again in conjunction with electronics and electric hole pair, can utilize wire that electric energy is exported.
Therefore, P type microcrystalline semiconductor layer 3 used in the present invention and wide energy gap amorphous silicon semiconductor layer 4, its purpose is all improving the right joint efficiency in electronics and electric hole, when improving the right joint efficiency in electronics and electric hole, can obtain higher generating efficiency, and can effectively reduce production costs and accord with the demands of the market.
Above explanation, just illustrative, nonrestrictive for the purpose of the present invention; those of ordinary skills understand; in the situation that does not break away from the spirit and scope that claim limits, can make many corrections, variation or equivalence, but all will fall within protection scope of the present invention.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
The first figure is the flow process block schematic diagram of the present invention's Novel processing.
The second figure is the present invention's new structure figure
The primary clustering symbol description
1... transparent glass substrate
2... the first transparency conducting layer
3...P type microcrystalline silicon semiconductor layer
4... wide energy gap amorphous silicon semiconductor layer
5... essential type semiconductor layer
6...N type amorphous silicon semiconductor layer
7... the second transparency conducting layer
8... outer transparent glass substrate
Claims (4)
1. Novel processing that can effectively promote the amorphous silicon thin-film solar cell generating efficiency, its structure of this technical method utilizes P layer microcrystal silicon to replace traditional P layer amorphous silicon, and the amorphous silicon semiconductor layer that increases the wide energy gap of one deck is between P type microcrystalline silicon semiconductor layer and essential type semiconductor layer, and its purpose is to obtain higher generating efficiency.
2. a kind of Novel processing that can effectively promote the amorphous silicon thin-film solar cell generating efficiency according to claim 1, the glass substrate of transparent glass substrate material selection superelevation penetration wherein is to increase the ratio of incident light.
3. a kind of Novel processing that can effectively promote the amorphous silicon thin-film solar cell generating efficiency according to claim 1, wherein this P type microcrystalline silicon semiconductor layer replaces traditional P type amorphous silicon semiconductor layer, promotes photoelectric conversion efficiency.
4. a kind of Novel processing that can effectively promote the amorphous silicon thin-film solar cell generating efficiency according to claim 1, this wide energy gap amorphous silicon semiconductor layer wherein for newly increasing processing procedure, can more effectively increase electronics in the solar cell and the combination in electric hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102294044A CN102931292A (en) | 2011-08-11 | 2011-08-11 | Novel manufacturing process capable of effectively improving generating efficiency of amorphous silicon thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102294044A CN102931292A (en) | 2011-08-11 | 2011-08-11 | Novel manufacturing process capable of effectively improving generating efficiency of amorphous silicon thin film solar cell |
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| CN102931292A true CN102931292A (en) | 2013-02-13 |
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| CN2011102294044A Pending CN102931292A (en) | 2011-08-11 | 2011-08-11 | Novel manufacturing process capable of effectively improving generating efficiency of amorphous silicon thin film solar cell |
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| CN (1) | CN102931292A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1542988A (en) * | 2003-09-25 | 2004-11-03 | 李 毅 | Single-chamber depositing amorphous silicon laminated solar battery and manufacturing method |
| CN101295743A (en) * | 2008-04-15 | 2008-10-29 | 福建钧石能源有限公司 | Thin film, its forming method and solar battery with the same |
| CN101369610A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | Novel structural silicon nanometer line solar battery |
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2011
- 2011-08-11 CN CN2011102294044A patent/CN102931292A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1542988A (en) * | 2003-09-25 | 2004-11-03 | 李 毅 | Single-chamber depositing amorphous silicon laminated solar battery and manufacturing method |
| CN101295743A (en) * | 2008-04-15 | 2008-10-29 | 福建钧石能源有限公司 | Thin film, its forming method and solar battery with the same |
| CN101369610A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | Novel structural silicon nanometer line solar battery |
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Application publication date: 20130213 |