CN209249469U - A kind of heterojunction solar battery - Google Patents
A kind of heterojunction solar battery Download PDFInfo
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- CN209249469U CN209249469U CN201822094341.6U CN201822094341U CN209249469U CN 209249469 U CN209249469 U CN 209249469U CN 201822094341 U CN201822094341 U CN 201822094341U CN 209249469 U CN209249469 U CN 209249469U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
This application discloses a kind of heterojunction solar batteries, including substrate layer；Positioned at the surface passivation layer of substrate layer first surface；Positioned at surface passivation layer away from the hole selective exposure layer on the surface of substrate layer, and selective exposure layer in hole is broad-band gap hole selective exposure layer；Positioned at hole selective exposure layer away from the first electrode on the surface of surface passivation layer；Positioned at the intrinsic layer of substrate layer second surface；Positioned at intrinsic layer away from the doped layer on the surface of substrate layer；Positioned at doped layer away from the second electrode on the surface of intrinsic layer；Wherein, first surface is opposite with second surface.Selective exposure layer in hole is broad-band gap hole selective exposure layer in heterojunction solar battery in the application, the band gap of hole selective exposure layer is wide, selective exposure layer light absorption range in hole is small, parasitic light absorption can substantially be reduced, promote short circuit current density of solar cell and photoelectric conversion efficiency.
Description
Technical field
This application involves technical field of solar cells, more particularly to a kind of heterojunction solar battery.
Background technique
Solar energy be a kind of reserves it is unlimited, using free, environmentally protective renewable energy, solar cell can be by the sun
It can be converted into electric energy, provide clean energy resource, therefore the extensive attention by countries in the world for society.Wherein, hetero-junctions sun electricity
Surface of crystalline silicon passivation and selective exposure function are realized using amorphous silicon membrane in pond, possess photoelectric conversion efficiency height, temperature system
The advantages that low, potential-free induced attenuation of number and photo attenuation, application potential is huge.
In traditional heterojunction solar battery, the P-type non-crystalline silicon of Window layer and the band gap of intrinsic amorphous silicon are respectively 1.6
~1.7eV and 1.7eV can generate more serious parasitic absorption to ultraviolet light and visible light, make since the band gap of the two is relatively narrow
At optical loss, battery short circuit current density and photoelectric conversion efficiency are influenced.
P-type non-crystalline silicon is replaced by the N-type amorphous silicon of 1.7~1.8eV with band gap in the prior art, to reduce ultraviolet light and can
Light-exposed parasitic absorption, but the band gap of the Window layer of N-type amorphous silicon and intrinsic amorphous silicon is still relatively narrow, it can only be to a certain degree
The upper parasitic absorption for reducing ultraviolet light and visible light, the more serious problem of parasitic absorption are not resolved.
Utility model content
The purpose of the application is to provide a kind of heterojunction solar battery, substantially to reduce heterojunction solar battery Window layer
Parasitic light absorption promotes short circuit current density of solar cell and photoelectric conversion efficiency.
In order to solve the above technical problems, the application provides a kind of heterojunction solar battery, comprising:
Substrate layer；
Positioned at the surface passivation layer of the substrate layer first surface；
Positioned at the surface passivation layer away from the hole selective exposure layer on the surface of the substrate layer, and the hole is selected
Selecting property contact layer is broad-band gap hole selective exposure layer；
Positioned at the hole selective exposure layer away from the first electrode on the surface of the surface passivation layer；
Positioned at the intrinsic layer of the substrate layer second surface；
Positioned at the intrinsic layer away from the doped layer on the surface of the substrate layer；
Positioned at the doped layer away from the second electrode on the surface of the intrinsic layer；
Wherein, the first surface is opposite with the second surface.
Optionally, the surface passivation layer is broad-band gap surface passivation layer.
Optionally, further includes:
The first conductive layer between the broad-band gap hole selective exposure layer and the first electrode；
And the second conductive layer between the doped layer and the second electrode.
Optionally, the Thickness range of the broad-band gap hole selective exposure layer is 0.1nm-50nm, including endpoint
Value.
Optionally, the Thickness range of the broad-band gap surface passivation layer is 0.1nm-5nm, including endpoint value.
Optionally, the second electrode is gate line electrode.
Heterojunction solar battery provided herein, including substrate layer；Positioned at the surface of the substrate layer first surface
Passivation layer；Positioned at the surface passivation layer away from the hole selective exposure layer on the surface of the substrate layer, and the hole is selected
Selecting property contact layer is broad-band gap hole selective exposure layer；Deviate from the surface passivation layer positioned at the hole selective exposure layer
Surface first electrode；Positioned at the intrinsic layer of the substrate layer second surface；Deviate from the substrate layer positioned at the intrinsic layer
Surface doped layer；Positioned at the doped layer away from the second electrode on the surface of the intrinsic layer；Wherein, the first surface
It is opposite with the second surface.Selective exposure layer in hole is the selection of broad-band gap hole in heterojunction solar battery in the application
Property contact layer, the band gap of hole selective exposure layer is wide, and selective exposure layer light absorption range in hole is small, can substantially reduce parasitism
Light absorption promotes short circuit current density of solar cell and photoelectric conversion efficiency.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present application or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this Shen
Some embodiments please for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of heterojunction solar battery provided herein；
Fig. 2 is another structural schematic diagram of heterojunction solar battery provided herein.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, with reference to the accompanying drawings and detailed description
The application is described in further detail.Obviously, described embodiments are only a part of embodiments of the present application, rather than
Whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall in the protection scope of this application.
Many details are explained in the following description in order to fully understand the utility model, but this is practical new
Type can also be implemented using other than the one described here other way, and those skilled in the art can be without prejudice to this reality
With doing similar popularization in the case where novel intension, therefore the utility model is not limited by the specific embodiments disclosed below.
Just as described in the background section, in existing heterojunction solar battery, the band gap of P-type non-crystalline silicon and intrinsic amorphous silicon
Respectively 1.6~1.7eV and 1.7eV can generate more serious post since the band gap of the two is relatively narrow to ultraviolet light and visible light
It is raw to absorb, optical loss is caused, battery short circuit current density and photoelectric conversion efficiency are influenced.The N for being 1.7~1.8eV with band gap
After type amorphous silicon replaces P-type non-crystalline silicon, although can reduce the parasitic absorption of ultraviolet light and visible light to a certain extent,
The more serious problem of parasitic absorption is not resolved.
In view of this, the application provides a kind of heterojunction solar battery, referring to FIG. 1, Fig. 1 is provided herein different
A kind of structural schematic diagram of matter connection solar cell, the heterojunction solar battery include:
Substrate layer 1；
Positioned at the surface passivation layer 2 of 1 first surface of substrate layer；
Deviate from the hole selective exposure layer 3 on the surface of the substrate layer 1, and the sky positioned at the surface passivation layer 2
Cave selective exposure layer 3 is broad-band gap hole selective exposure layer；
Positioned at the hole selective exposure layer 3 away from the first electrode 4 on the surface of the surface passivation layer 2；
Positioned at the intrinsic layer 5 of 1 second surface of substrate layer；
Positioned at the intrinsic layer 5 away from the doped layer 6 on the surface of the substrate layer 1；
Positioned at the doped layer 6 away from the second electrode 7 on the surface of the intrinsic layer 5；
Wherein, the first surface is opposite with the second surface.
The effect of hole selective exposure layer 3 is can to extract the hole of substrate layer, is realized to photo-generated carrier
Separation, in the embodiment of the present application, the reason of setting broad-band gap hole selective exposure layer for hole selective exposure layer 3
It is that the band gap of broad-band gap hole selective exposure layer is wide, and light absorption range is small, can substantially reduces heterojunction solar battery Window layer
Parasitic light absorption, improve heterojunction solar battery short-circuit current density and photoelectric conversion efficiency.
It should be noted that being not specifically limited in the present embodiment to the material of broad-band gap hole selective exposure layer, only
Want the band gap of material in 2.0eV or more.
Optionally, on the basis of the above embodiments, in one embodiment of the application, broad-band gap hole is selectively connect
The material of contact layer can be molybdenum oxide (MoO3) or tungsten oxide (WO3) or vanadium oxide (V2O5) or nickel oxide (NiO)
Etc..
It should be noted that being not specifically limited in the embodiment of the present application to the material of passivation layer, as long as being able to suppress lining
The surface recombination of bottom 1.
It should be noted that the material of substrate layer 1 is not specifically limited in the embodiment of the present application, it can sets itself.Example
Such as, substrate layer 1 can use P-type crystal silicon as substrate layer using N-type crystalline silicon as substrate layer or substrate layer 1.
Specifically, based on any of the above embodiments, in one embodiment of the application, when substrate layer 1 is N-type
When crystalline silicon, doped layer 6 is N-type amorphous silicon.In another embodiment of the application, when substrate layer 1 is P-type crystal silicon,
Doped layer 6 is N-type amorphous silicon.
Based on any of the above embodiments, in one embodiment of the application, first electrode 4 and second electrode 7
Material be metal electrode, metal electrode material can be silver-colored (Ag), nickel (Ni), copper (Cu) etc., but the application to this not
It limits, in the other embodiments of the application, the material of first electrode 4 and second electrode 7 can also be other conductive materials,
Preferably good conductivity, the low material of resistivity, specifically depends on the circumstances.
It should also be noted that, the structure of second electrode 7 and be not especially limited in the embodiment of the present application, it can be optionally
Depending on.
Preferably, in one embodiment of the application, the second electrode 7 is gate line electrode, and second electrode 7 is arranged
For gate line electrode, the one side where can making heterojunction solar battery second electrode 7 absorbs light, and then keeps the hetero-junctions sun electric
The amount light of pond overall absorption increases, and promotes the generated output of heterojunction solar battery.
Based on any of the above embodiments, in one embodiment of the application, intrinsic layer 5 is intrinsic amorphous silicon.
Heterojunction solar battery provided herein, including substrate layer 1；Positioned at the table of 1 first surface of substrate layer
Face passivation layer 2；Deviate from the hole selective exposure layer 3 on the surface of the substrate layer 1 positioned at the surface passivation layer 2, and described
Hole selective exposure layer 3 is broad-band gap hole selective exposure layer；Deviate from the table positioned at the hole selective exposure layer 3
The first electrode 4 on the surface of face passivation layer 2；Positioned at the intrinsic layer 5 of 1 second surface of substrate layer；It is carried on the back positioned at the intrinsic layer 5
The doped layer 6 on the surface from the substrate layer 1；Positioned at the doped layer 6 away from the second electrode 7 on the surface of the intrinsic layer 5；
Wherein, the first surface is opposite with the second surface.Hole selective exposure in heterojunction solar battery in the application
Layer 3 is broad-band gap hole selective exposure layer, and the band gap of hole selective exposure layer 3 is wide, 3 extinction model of hole selective exposure layer
It encloses small, can substantially reduce parasitic light absorption, promote short circuit current density of solar cell and photoelectric conversion efficiency.
Optionally, based on any of the above embodiments, in one embodiment of the application,
The surface passivation layer 2 is broad-band gap surface passivation layer.
It should be noted that the material of broad-band gap surface passivation layer is not specifically limited in the present embodiment, it can be voluntarily
Selection, as long as the band gap of material is in 2.0eV or more.For example, the material of broad-band gap surface passivation layer can be silica
(SiO2) or aluminium oxide (Al2O3) etc..
In the present embodiment, broad-band gap surface passivation layer is set by surface passivation layer 2, with the selective exposure of broad-band gap hole
Layer 3 constitutes the Window layer of heterojunction solar battery, i.e. the material of Window layer is the material of broad-band gap, and light absorption range further contracts
It is small, therefore, it can further reduce parasitic light absorption, to promote short circuit current density of solar cell and photoelectric conversion effect
Rate.
Referring to FIG. 2, Fig. 2 is heterojunction solar battery another kind structural schematic diagram provided herein.At above-mentioned
On the basis of one embodiment, in one embodiment of the application, further includes:
The first conductive layer 8 between the broad-band gap hole selective exposure layer 3 and the first electrode 4 and it is located at
The second conductive layer 9 between the doped layer 6 and the second electrode 7, the purpose that conductive layer is arranged are to reduce charge laterally to pass
Transmission of electricity resistance, improves the photoelectric conversion performance of heterojunction solar battery.
Specifically, the first conductive layer 8 and the second conductive layer 9 are transparency conducting layer in one embodiment of the application,
The transmitance for increasing light improves the photoelectricity of heterojunction solar battery to increase the light absorption amount of heterojunction solar battery
Transfer efficiency.
It should be noted that the material of the first conductive layer 8 is not specifically limited in the present embodiment, it can be with sets itself.
Such as first the material of conductive layer 8 can be tin-doped indium oxide (ITO) perhaps fluorine-doped tin oxide (FTO) or Al-Doped ZnO
(AZO) or boron-doping zinc oxide (BZO) etc..Similarly, in the present embodiment, specific limit is not done yet to the material of the second conductive layer 9
It is fixed, it can be with sets itself.Such as second the material of conductive layer 9 can be tin-doped indium oxide (ITO) or fluorine-doped tin oxide
(FTO) perhaps Al-Doped ZnO (AZO) or boron-doping zinc oxide (BZO) etc..
Based on any of the above embodiments, in one embodiment of the application, the broad-band gap hole selectivity
The Thickness range of contact layer 3 is 0.1nm-50nm, including endpoint value, to avoid the thickness of broad-band gap hole selective exposure layer
Degree is too small, limited to the photoelectric conversion efficiency promotion of heterojunction solar battery to the inferior separating effect of photo-generated carrier, keeps away simultaneously
The thickness for exempting from broad-band gap hole selective exposure layer 3 is too big, increases production cost, while extending the process time, to reduce life
Produce efficiency.
Based on any of the above embodiments, in one embodiment of the application, the broad-band gap surface passivation layer
Thickness range be 0.1nm-5nm, including endpoint value, the thickness to avoid broad-band gap surface passivation layer is too small, can not be right
The surface recombination of substrate layer 1 is effectively inhibited, and causes the photoelectric conversion efficiency of heterojunction solar battery low, while avoiding broadband
The thickness of gap surface passivation layer is too big, and the tunneling efficiency in hole is caused to reduce, and increases the series resistance of heterojunction solar battery,
To influence the photoelectric conversion efficiency of heterojunction solar battery.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.
The foregoing description of the disclosed embodiments makes those skilled in the art can be realized or use the utility model.
Various modifications to these embodiments will be apparent for a person skilled in the art, general original as defined herein
Reason can be realized in other embodiments without departing from the spirit or scope of the present utility model.Therefore, this is practical new
Type is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase
Consistent widest scope.
Claims (6)
1. a kind of heterojunction solar battery characterized by comprising
Substrate layer；
Positioned at the surface passivation layer of the substrate layer first surface；
Positioned at the surface passivation layer away from the hole selective exposure layer on the surface of the substrate layer, and the hole is selective
Contact layer is broad-band gap hole selective exposure layer；
Positioned at the hole selective exposure layer away from the first electrode on the surface of the surface passivation layer；
Positioned at the intrinsic layer of the substrate layer second surface；
Positioned at the intrinsic layer away from the doped layer on the surface of the substrate layer；
Positioned at the doped layer away from the second electrode on the surface of the intrinsic layer；
Wherein, the first surface is opposite with the second surface.
2. heterojunction solar battery as described in claim 1, which is characterized in that the surface passivation layer is that broad-band gap surface is blunt
Change layer.
3. heterojunction solar battery as claimed in claim 1 or 2, which is characterized in that further include:
The first conductive layer between the broad-band gap hole selective exposure layer and the first electrode；
And the second conductive layer between the doped layer and the second electrode.
4. heterojunction solar battery as claimed in claim 3, which is characterized in that the broad-band gap hole selective exposure layer
Thickness range is 0.1nm-50nm, including endpoint value.
5. heterojunction solar battery as claimed in claim 2, which is characterized in that the thickness of the broad-band gap surface passivation layer takes
Value range is 0.1nm-5nm, including endpoint value.
6. heterojunction solar battery as described in claim 1, which is characterized in that the second electrode is gate line electrode.
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| CN201822094341.6U CN209249469U (en) | 2018-12-13 | 2018-12-13 | A kind of heterojunction solar battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309138A (en) * | 2018-12-13 | 2019-02-05 | 苏州腾晖光伏技术有限公司 | A kind of heterojunction solar battery and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309138A (en) * | 2018-12-13 | 2019-02-05 | 苏州腾晖光伏技术有限公司 | A kind of heterojunction solar battery and preparation method thereof |
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