CN205959992U - Heterojunction solar cell - Google Patents
Heterojunction solar cell Download PDFInfo
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- CN205959992U CN205959992U CN201620919526.4U CN201620919526U CN205959992U CN 205959992 U CN205959992 U CN 205959992U CN 201620919526 U CN201620919526 U CN 201620919526U CN 205959992 U CN205959992 U CN 205959992U
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Abstract
The utility model discloses a heterojunction solar cell, it includes: N type monocrystalline silicon piece, establish on the positive first intrinsic amorphous silicon thin film layer of n type monocrystalline silicon piece, establish the first doping amorphous silicon thin film layer on first intrinsic amorphous silicon thin film layer, establish the first transparent conduction film layer on an amorphous -silicon -doped thin film layer, establish electrode before the metal gate line on first transparent conduction film layer, establish the second intrinsic amorphous silicon thin film layer at the n type monocrystalline silicon piece back, establish the second doping amorphous silicon thin film layer on second intrinsic amorphous silicon thin film layer, establish the 2nd conduction film layer on the 2nd amorphous -silicon -doped thin film layer, establish the two -sided conductive metal foil belt layer on the 2nd conduction film layer. Resistance is low, with low costs through adopting for its back electrode, high reflectivity's two -sided conductive metal foil belt replaces dear low temperature silver thick liquid grid line and as the battery back electrode, has reduced battery electrode manufacturing cost by a wide margin, promotes battery conversion efficiency.
Description
Technical field
This utility model is related to area of solar cell, more particularly, to a kind of heterojunction solar battery.
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electric energy, solar-electricity under illumination condition
Photogenerated current can be produced inside pond, by electrode, electric energy be exported.In recent years, manufacture of solar cells technology constantly improves, raw
Produce cost constantly to reduce, conversion efficiency improves constantly, the application of solar cell power generation is increasingly extensive and becomes supply of electric power
Important energy source.
Heterojunction solar battery is the new and effective battery technology of one of which, and it combines monocrystaline silicon solar cell
With the advantage of non-crystal silicon solar cell, there is the features such as preparation technology temperature is low, conversion efficiency is higher, hot properties is good, therefore
There is very big market potential.
Existing heterojunction solar battery basic structure is as follows：Intrinsic non-in one layer of N-shaped monocrystalline silicon piece front and back deposition
Crystal silicon layer；Intrinsic amorphous silicon layer surface at positive back side depositing p-type amorphous silicon layer and N-shaped amorphous silicon layer respectively；In battery just
Backside deposition nesa coating；Make silver-colored gate electrode in battery both sides, whole preparation process is all to enter at less than 220 DEG C
Row.
Can be seen that heterojunction solar battery preparation process from existing heterojunction solar battery basic structure all to exist
Carry out under 220 degree, typically adopt low temperature silver paste as gate line electrode in the market, low temperature silver paste is used with current crystal silicon battery
The contrast of high temperature silver paste, printing width is wider, and consumption is bigger, and the market price is very expensive, the silver that in addition cell backside adopts
Slurry consumption is typically 2～3 times of front, and therefore back side silver paste grid line is added significantly to the production cost of battery.
Utility model content
The purpose of this utility model is to overcome defect of the prior art, provides a kind of efficient heterojunction solar electricity
Pond is so as to have the characteristics that low cost, high conversion efficiency.
For achieving the above object, this utility model adopts following design：A kind of heterojunction solar battery, including：n
Type monocrystalline silicon piece；It is located at the first intrinsic amorphous silicon film layer in N-shaped monocrystalline silicon piece front；It is located at first intrinsic amorphous silicon film layer
On the first doped amorphous silicon film layer；It is located at the first transparent conductive film layer on the first doped amorphous silicon film layer；It is located at
Electrode before metal grid lines in first transparent conductive film layer；It is located at the second intrinsic amorphous silicon thin film at the N-shaped monocrystalline silicon piece back side
Layer；It is located at the second doped amorphous silicon film layer on the second intrinsic amorphous silicon thin layer；It is located at the second doped amorphous silicon film layer
On the second conductive membrane layer；It is located at the double-side conductive metal foil adhesive tape layer on the second conductive membrane layer.
Preferably, when described first doped amorphous silicon film layer is N-shaped amorphous thin Film layers, described second doped amorphous silicon
Thin layer is then p-type amorphous thin Film layers；When described first doped amorphous silicon film layer is p-type amorphous thin Film layers, described the
Two doped amorphous silicon film layers are then N-shaped amorphous thin Film layers.
Preferably, the thickness of described first transparent conductive film layer be 0.1～150nm, the thickness of the second conductive membrane layer
For 0.1～800nm, described first intrinsic amorphous silicon film thickness degree is 4～10nm, N-shaped amorphous thin Film layers thickness is 4～
10nm, the second intrinsic amorphous silicon thin film layer thickness are 4～10nm, and p-type amorphous thin Film layers thickness is 5～15nm.
Preferably, described double-side conductive metal foil adhesive tape is aluminum foil and adhesive tape, copper foil tape or tin plating copper foil tape.
Preferably, described double-side conductive metal foil adhesive tape one-side band glue, its glue-line is conductive adhesive layer.
Preferably, the thickness of described double-side conductive metal is 10～500um.
Preferably, the sheet resistance of described double-side conductive metal foil adhesive tape metal covering is less than 0.02 Ω/.
Preferably, before described metal grid lines, the pattern of electrode is many main grids pattern gate line electrode or transverse and longitudinal intersection is latticed
Dereliction gate pattern gate line electrode.
This utility model adopts above design, and backplate is passed through low, low cost, high reflectance double using resistance
Face conducting metal foil belt substitutes expensive low temperature silver paste grid line as cell backside electrode, significantly reduces battery electrode and produces
Cost, significantly reduces cell series resistance, increased the reflected light of cell backside light, thus improve the fill factor, curve factor of battery
And short circuit current, and then lifting battery conversion efficiency, this utility model technological process of production is simple simultaneously, simple operation, very
Suitable high-volume automated production.
Brief description
The accompanying drawing constituting the part of the application is used for providing further understanding to of the present utility model, this reality
It is used for explaining this utility model with new schematic description and description, do not constitute new to this practicality
The improper restriction of type.In the accompanying drawings：
Fig. 1 is a kind of structural representation of heterojunction solar battery of this utility model；
Fig. 2 is the schematic diagram of electrode many main grids pattern before this utility model metal grid lines；
Fig. 3 is the schematic diagram of electrode dereliction gate pattern before this utility model metal grid lines.
Specific embodiment
The purpose of this utility model is to provide a kind of heterojunction solar battery, and it optimizes cell backside electrode, greatly
Width reduces production cost, improves battery performance.
Embodiment 1
As shown in figure 1, this utility model provides a kind of heterojunction solar battery, it includes：N-shaped monocrystalline silicon piece 1, if
In the first intrinsic amorphous silicon film layer 2 in N-shaped monocrystalline silicon piece 1 front, first being located on first intrinsic amorphous silicon film layer 2 is mixed
Miscellaneous amorphous thin Film layers 4, are located at the first transparent conductive film layer 6 on the first doped amorphous silicon film layer 4, are located at first transparent
Electrode 8 before metal grid lines on conductive membrane layer 6；It is located at the second intrinsic amorphous silicon thin layer 3 at N-shaped monocrystalline silicon piece 1 back side；If
The second doped amorphous silicon film layer 5 on the second intrinsic amorphous silicon thin layer 3, is located on the second doped amorphous silicon film layer 5
The second conductive membrane layer 7, be located at the double-side conductive metal foil adhesive tape layer 9 on the second conductive membrane layer 7.
Wherein, when described first doped amorphous silicon film layer 4 is N-shaped amorphous thin Film layers, described second doped amorphous silicon
Thin layer 5 is then p-type amorphous thin Film layers；When described first doped amorphous silicon film layer 4 is p-type amorphous thin Film layers, described
Second doped amorphous silicon film layer 5 is then N-shaped amorphous thin Film layers.Described first transparent conductive film layer 6 is tin indium oxide, mixes
At least one in aluminum zinc oxide, Graphene.Described second conductive membrane layer 7 is tin indium oxide, Al-Doped ZnO, Graphene,
At least one in CU, AG, AL, nickel alloy, TI.Described first transparent conductive film layer 6, the second conductive membrane layer 7 are with thing
The mode of physical vapor deposition is formed.The thickness of described first transparent conductive film layer 6 is 0.1～150nm, the second conductive membrane layer
7 thickness is 0.1～800nm.
Described double-side conductive metal foil adhesive tape 9 is monoblock or does hollow processing.Described double-side conductive metal foil adhesive tape 9 is adopted
Paste formation with the mode rolling or be laminated.Described double-side conductive metal foil adhesive tape 9 is aluminum foil and adhesive tape, copper foil tape, tin-coated copper
One of which in foil belt.Described double-side conductive metal foil adhesive tape 9 is one-side band glue, and glue-line is conductive adhesive layer.Described double
Face conducting metal foil belt 9 thickness is 5～500um.The sheet resistance of described double-side conductive metal foil adhesive tape 9 metal covering is less than 0.02
Ω/□.
Described first intrinsic amorphous silicon film thickness degree is 4～10nm, and N-shaped amorphous thin Film layers thickness is 4～10nm, the
Two intrinsic amorphous silicon thin film layer thickness are 4～10nm, and p-type amorphous thin Film layers thickness is 5～15nm.Described first intrinsic amorphous
Silicon membrane layer, N-shaped amorphous thin Film layers, the second intrinsic amorphous silicon thin layer, p-type amorphous thin Film layers are with plasmaassisted
The mode of type chemical vapor deposition is formed.
As shown in Fig. 2 the pattern of electrode 8 is many main grids pattern gate line electrode before described metal grid lines.
Embodiment 2
As shown in figure 3, as different from Example 1, in the present embodiment, before described metal grid lines, the pattern of electrode 8 is horizontal stroke
Crossed longitudinally latticed dereliction gate pattern gate line electrode.
In this utility model, cell backside adopts that resistance is low, low cost, high reflectance double-side conductive metal foil adhesive tape
Substitute expensive low temperature silver paste grid line as cell backside electrode, significantly reduce battery electrode production cost, significantly reduce
Cell series resistance, increased the reflected light of cell backside, thus improve fill factor, curve factor and the short circuit current of battery, Jin Erti
Rise battery conversion efficiency, this utility model technological process of production is simple, simple operation simultaneously, be especially suitable for high-volume metaplasia automatically
Produce.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all this
Any modification, equivalent and improvement made within the spirit of utility model and principle etc., should be included in this utility model
Protection domain within.
Claims (8)
1. a kind of heterojunction solar battery is it is characterised in that include：
N-shaped monocrystalline silicon piece；
It is located at the first intrinsic amorphous silicon film layer in N-shaped monocrystalline silicon piece front；
It is located at the first doped amorphous silicon film layer on first intrinsic amorphous silicon film layer；
It is located at the first transparent conductive film layer on the first doped amorphous silicon film layer；
It is located at electrode before the metal grid lines in the first transparent conductive film layer；
It is located at the second intrinsic amorphous silicon thin layer at the N-shaped monocrystalline silicon piece back side；
It is located at the second doped amorphous silicon film layer on the second intrinsic amorphous silicon thin layer；
It is located at the second conductive membrane layer on the second doped amorphous silicon film layer；
It is located at the double-side conductive metal foil adhesive tape layer on the second conductive membrane layer.
2. solaode according to claim 1 it is characterised in that：Described first doped amorphous silicon film layer is N-shaped
During amorphous thin Film layers, described second doped amorphous silicon film layer is then p-type amorphous thin Film layers；Described first doped amorphous silicon
When thin layer is p-type amorphous thin Film layers, described second doped amorphous silicon film layer is then N-shaped amorphous thin Film layers.
3. solaode according to claim 1 it is characterised in that：The thickness of described first transparent conductive film layer is
0.1～150nm, the second conductive membrane layer thickness be 0.1～800nm, described first intrinsic amorphous silicon film thickness degree be 4～
10nm, N-shaped amorphous thin Film layers thickness is 4～10nm, the second intrinsic amorphous silicon thin film layer thickness is 4～10nm, p-type non-crystalline silicon
Thin film layer thickness is 5～15nm.
4. solaode according to claim 1 it is characterised in that：Described double-side conductive metal foil adhesive tape is aluminium foil glue
Band, copper foil tape or tin plating copper foil tape.
5. solaode according to claim 1 it is characterised in that：Described double-side conductive metal foil adhesive tape one-side band
Glue, its glue-line is conductive adhesive layer.
6. solaode according to claim 1 it is characterised in that：The thickness of described double-side conductive metal be 10～
500um.
7. solaode according to claim 1 it is characterised in that：Described double-side conductive metal foil adhesive tape metal covering
Sheet resistance is less than 0.02 Ω/.
8. solaode according to claim 1 it is characterised in that：Before described metal grid lines, the pattern of electrode is to lead more
Gate pattern gate line electrode or transverse and longitudinal intersect latticed dereliction gate pattern gate line electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620919526.4U CN205959992U (en) | 2016-08-23 | 2016-08-23 | Heterojunction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620919526.4U CN205959992U (en) | 2016-08-23 | 2016-08-23 | Heterojunction solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN205959992U true CN205959992U (en) | 2017-02-15 |
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ID=57976642
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620919526.4U Active CN205959992U (en) | 2016-08-23 | 2016-08-23 | Heterojunction solar cell |
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| Country | Link |
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| CN (1) | CN205959992U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114530525A (en) * | 2022-01-27 | 2022-05-24 | 江苏日托光伏科技股份有限公司 | Preparation method and application of non-silver metallized structure |
| CN114843373A (en) * | 2022-01-27 | 2022-08-02 | 江苏日托光伏科技股份有限公司 | Preparation method of HTJ battery |
-
2016
- 2016-08-23 CN CN201620919526.4U patent/CN205959992U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114530525A (en) * | 2022-01-27 | 2022-05-24 | 江苏日托光伏科技股份有限公司 | Preparation method and application of non-silver metallized structure |
| CN114843373A (en) * | 2022-01-27 | 2022-08-02 | 江苏日托光伏科技股份有限公司 | Preparation method of HTJ battery |
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