CN206098402U - Heterojunction solar cell and module thereof - Google Patents
Heterojunction solar cell and module thereof Download PDFInfo
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- CN206098402U CN206098402U CN201620801907.2U CN201620801907U CN206098402U CN 206098402 U CN206098402 U CN 206098402U CN 201620801907 U CN201620801907 U CN 201620801907U CN 206098402 U CN206098402 U CN 206098402U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a heterojunction solar cell and module thereof, including n does type monocrystalline silicon piece establish at n the first doping amorphous silicon thin film layer on first intrinsic amorphous silicon thin film layer is established on the positive first intrinsic amorphous silicon thin film layer of type monocrystalline silicon piece, establishes the first transparent conduction film layer on first doping amorphous silicon thin film layer, establishes the metal gate line positive electrode on first transparent conduction film layer, establish at n the second doping amorphous silicon thin film layer on second intrinsic amorphous silicon thin film layer is established on the second intrinsic amorphous silicon thin film layer at the type monocrystalline silicon piece back, establishes the transparent conduction film layer of second on second doping amorphous silicon thin film layer, establishes the composite metal thin layer on the transparent conduction film layer of second, establishes the metal main grid back electrode on the composite metal thin layer. The utility model discloses reduce battery manufacturing cost by a wide margin, promote battery conversion efficiency, adopt the utility model discloses the module of solar cell preparation can promote the long -term reliability of module by a wide margin.
Description
Technical field
The utility model is related to technical field of solar batteries, more particularly to a kind of heterojunction solar battery and its mould
Group.
Background technology
Solar cell is a kind of semiconductor devices that can convert solar energy into electric energy, the solar-electricity under illumination condition
Pond inside can produce photogenerated current, be exported electric energy by electrode.In recent years, manufacture of solar cells technology constantly improves, raw
Producing cost constantly reduces, and conversion efficiency is improved constantly, and the application of solar cell power generation is increasingly extensive and becomes supply of electric power
Important energy source.
Heterojunction solar battery is the new and effective battery technology of one of which, and it combines monocrystaline silicon solar cell
With the advantage of non-crystal silicon solar cell, there is the features such as preparation technology temperature is low, conversion efficiency is higher, hot properties is good, therefore
With very big market potential.
Existing heterojunction solar battery basic structure is as follows：In n-type monocrystalline silicon piece front and back, one layer of deposition is intrinsic
Amorphous silicon layer；Intrinsic amorphous silicon layer surface at the positive back side deposits respectively p-type amorphous silicon layer and n-type amorphous silicon layer；In battery
Positive backside deposition nesa coating；Silver-colored gate electrode is made in battery both sides, whole preparation process is all less than 220 DEG C
Under carry out.
Heterojunction solar battery preparation process is can be seen that from above-mentioned existing heterojunction solar battery basic structure
All carry out under 220 degree, need to make gate line electrode, the high temperature that low temperature silver paste is used with current crystal silicon battery using low temperature silver paste
Silver paste is contrasted, and printing width is wider, and consumption is bigger, and the market price is very expensive, and the silver paste consumption that cell backside is adopted is usual
It is positive 2～3 times, therefore back side silver paste grid line is added significantly to the production cost of battery.
Utility model content
For the problems referred to above, the utility model provides a kind of heterojunction solar battery and its module, solves at present
The shortcoming of two-sided silver grating line electrode high cost in n-type monocrystalline substrate solar cell.
To solve above-mentioned technical problem, the technical scheme that the utility model is adopted is：A kind of heterojunction solar battery,
Including n-type monocrystalline silicon piece, the positive first intrinsic amorphous silicon film layer of n-type monocrystalline silicon piece is located at, is located at the first intrinsic amorphous
The first doped amorphous silicon film layer on silicon membrane layer, the first transparent conductive film being located on the first doped amorphous silicon film layer
Layer, the metal grid lines positive electrode being located in the first transparent conductive film layer；Be located at the n-type monocrystalline silicon piece back side second is intrinsic non-
Layer polycrystal silicon film, the second doped amorphous silicon film layer being located in the second intrinsic amorphous silicon film layer, is located at the second doping amorphous
The second transparent conductive film layer on silicon membrane layer, the composite metal film layer being located in the second transparent conductive film layer, is located at
Metal primary back electrode on composite metal film layer.
Further, the first intrinsic amorphous silicon film thickness degree is 3～10nm, the first doped amorphous silicon film thickness
Spend for 3～10nm；Second intrinsic amorphous silicon thin film layer thickness be 3～10nm, the second doped amorphous silicon film thickness degree be 3～
10nm。
Further, when the first doped amorphous silicon film layer is n-type amorphous thin Film layers, second doping is non-
Layer polycrystal silicon film is then p-type amorphous thin Film layers；When the first doped amorphous silicon film layer is p-type amorphous thin Film layers,
The second doped amorphous silicon film layer is then n-type amorphous thin Film layers.
Further, the distance of first transparent conductive film layer and battery edge is 0～1mm, the second electrically conducting transparent
Film layer and composite metal film layer and the distance of battery edge are 0.1～1.5mm.
Further, the composite metal film layer includes metal conducting layer and coat of metal, wherein metal conducting layer
For copper, coat of metal is the metal material of the antioxygenic property for possessing good, the composite metal film thickness degree be 100～
1000nm, sheet resistance is less than 0.5 Ω/.
Further, the extremely many main grid pattern silver grating line electrodes of the metal grid lines positive electricity, the metal grid lines positive electrode
Silver paste resistivity is, less than 1E-5 Ω .CM, per mm in width welding welding pulling force 0.5N to be more than.
Further, the metal primary back electrode is many main grids without thin gate pattern silver grating line electrode, and silver paste resistivity is little
In 1E-3 Ω .CM, per mm in width welding welding pulling force 0.7N is more than.
A kind of module of heterojunction solar battery, including backboard body, the first packaging plastic being located on backboard body is located at
Multiple described solar cells on one packaging plastic, the solar cell connects into battery strings, is located at the sun by welding
The second packaging plastic on energy battery, first packaging plastic, the second packaging plastic are coated on the surrounding of solar cell and welding, if
Front plate body on the second packaging plastic.
From the above-mentioned description to the utility model structure, compared to the prior art, the utility model has following excellent
Point：
1st, the low temperature that the utility model cell backside is low using resistivity, low cost composite metal film layer substitutes costliness
The thin grid line of silver paste, low cost, the low temperature silver paste of good welding performance are printed on composite metal film layer and form main grid, are greatly reduced
Battery electrode production cost, improves the electric conductivity of back metal, increased absorption of the battery to back reflected light, so as to
Battery fill factor, curve factor and short circuit current are improved, conversion efficiency is lifted.
2nd, module is made using the utility model solar cell, the solder attachment of module back side welding can be substantially improved
Power, while avoid welding welding process from damaging metal film layer, so as to the long-term reliability of module is substantially improved.
Description of the drawings
The accompanying drawing for constituting the part of the application is used for providing further understanding to of the present utility model, of the present utility model
Schematic description and description is used to explain the utility model, does not constitute to improper restriction of the present utility model.In accompanying drawing
In：
Fig. 1 is a kind of structural representation of heterojunction solar battery of the utility model；
Fig. 2 is the enlarged drawing of A in the utility model Fig. 1；
Fig. 3 is the structural representation of the utility model metal grid lines positive electrode；
Fig. 4 is the structural representation of the utility model metal primary back electrode；
Fig. 5 is the battery strings schematic rear view that a kind of heterojunction solar battery of the utility model welds together；
Fig. 6 is a kind of heterojunction solar modular structure schematic diagram of the utility model；
Fig. 7 is a kind of top view of heterojunction solar module of the utility model.
Specific embodiment
In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to the utility model.It should be appreciated that specific embodiment described herein is only to explain
The utility model, is not used to limit the utility model.
As shown in figure 1, a kind of heterojunction solar battery, including n-type monocrystalline silicon piece 1, it is being located at n-type monocrystalline silicon piece 1 just
The first intrinsic amorphous silicon film layer 2 in face, the first doped amorphous silicon film layer 4 being located on first intrinsic amorphous silicon film layer 2,
The first transparent conductive film layer 6 being located on the first doped amorphous silicon film layer 4, is located in the first transparent conductive film layer 6
Metal grid lines positive electrode 8；The second intrinsic amorphous silicon film layer 3 at the back side of n-type monocrystalline silicon piece 1 is located at, the second intrinsic amorphous is located at
The second doped amorphous silicon film layer 5 on silicon membrane layer 3, the second electrically conducting transparent being located on the second doped amorphous silicon film layer 5
Film layer 7, the composite metal film layer 9 being located in the second transparent conductive film layer 7, the gold being located on composite metal film layer 9
Owner's grid back electrode 10
The thickness of first intrinsic amorphous silicon film layer 2 be 3～10nm, the thickness of the first doped amorphous silicon film layer 4 be 3～
10nm；The thickness of second intrinsic amorphous silicon film layer 3 be 3～10nm, the thickness of the second doped amorphous silicon film layer 5 be 3～10nm, institute
When to state the first doped amorphous silicon film layer 4 be n-type amorphous thin Film layers, the second doped amorphous silicon film layer 5 is then p-type
Amorphous thin Film layers；When the first doped amorphous silicon film layer 4 is p-type amorphous thin Film layers, second doped amorphous silicon
Film layer 5 is then n-type amorphous thin Film layers.
The transparent conductive film layer 7 of first transparent conductive film layer 6 and second is indium tin oxide films, Al-Doped ZnO
At least one in film, tungsten-doped indium oxide, the thickness of first transparent conductive film layer 6 is 10～150nm, second transparent
The thickness of conductive membrane layer 7 is 10～150nm, tells that the first transparent conductive film layer 6 and the second transparent conductive film layer 7 are adopted
Physical gas phase deposition technology is formed；First transparent conductive film layer 6 is 0～1mm apart from H1 with battery edge, and second is saturating
Bright conductive membrane layer 7 and composite metal film layer 9 be 0.1～1mm apart from H2 with battery edge, it is to avoid battery is short at edge
Road phenomenon.
The composite metal film layer 9 includes metal conducting layer and coat of metal, and wherein metal conducting layer is copper, metal
Protective layer is the metal material of the antioxygenic property for possessing good, such as aluminium, titanium, chromium metal；The composite metal film layer 9 is total
Thickness is 100～1000nm, and sheet resistance is less than 0.5 Ω/, tells that composite metal film layer 9 adopts physical gas phase deposition technology shape
Into.
As shown in Figure 3-4, the metal grid lines positive electrode 8 be many main grid pattern silver grating line electrodes 81, the metal grid lines
Positive electrode silver paste resistivity is, less than 1E-5 Ω .CM, per mm in width welding welding pulling force 0.5N to be more than.The metal primary back of the body
Electrode 10 is many main grids without thin gate pattern silver grating line electrode 101, and silver paste resistivity is less than 1E-3 Ω .CM, per mm in width welding
Welding pulling force is more than 0.7N.
The low-temperature silver that the utility model cell backside is low using resistivity, low cost composite metal film layer substitutes costliness
Thin grid line is starched, low cost, the low temperature silver paste of good welding performance are printed on composite metal film layer and form main grid, significantly reduce
Battery electrode production cost, improves the electric conductivity of back metal, absorption of the battery to back reflected light is increased, so as to carry
High battery fill factor, curve factor and short circuit current, lift conversion efficiency
As illustrated in figs. 5-7, a kind of module of heterojunction solar battery, including backboard body 14, is located on backboard body 14
First packaging plastic 13, the multiple described solar cells 11 being located on the first packaging plastic 13, the solar cell 11 passes through
Welding 12 connects into battery strings, the second packaging plastic 15 being located on solar cell 11, and first packaging plastic 13, second is encapsulated
Glue 15 is coated on the surrounding of the solar cell 11 and wire 12, the front plate body 16 being located on the second packaging plastic 15.Using this reality
Module is made with novel solar battery, the solder attachment power of module back side welding can be substantially improved, while avoiding welding from welding
Termination process damages metal film layer, so as to the long-term reliability of module is substantially improved.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (8)
1. a kind of heterojunction solar battery, it is characterised in that：Including n-type monocrystalline silicon piece, n-type monocrystalline silicon piece is located at positive
First intrinsic amorphous silicon film layer, the first doped amorphous silicon film layer being located on first intrinsic amorphous silicon film layer is located at
The first transparent conductive film layer on one doped amorphous silicon film layer, is being located at metal grid lines in the first transparent conductive film layer just
Electrode；The second intrinsic amorphous silicon film layer at the n-type monocrystalline silicon piece back side is located at, is located in the second intrinsic amorphous silicon film layer
Second doped amorphous silicon film layer, the second transparent conductive film layer being located on the second doped amorphous silicon film layer, is located at second
Composite metal film layer in transparent conductive film layer, the metal primary back electrode being located on composite metal film layer.
2. a kind of heterojunction solar battery according to claim 1, it is characterised in that：The first intrinsic amorphous silicon film
Thickness degree is 3～10nm, the first doped amorphous silicon film thickness degree is 3～10nm；Second intrinsic amorphous silicon thin film layer thickness is 3
～10nm, the second doped amorphous silicon film thickness degree are 3～10nm.
3. a kind of heterojunction solar battery according to claim 1, it is characterised in that：First doped amorphous silicon film
When layer is n-type amorphous thin Film layers, the second doped amorphous silicon film layer is then p-type amorphous thin Film layers；Described first
When doped amorphous silicon film layer is p-type amorphous thin Film layers, the second doped amorphous silicon film layer is then thin for n-type non-crystalline silicon
Film layer.
4. a kind of heterojunction solar battery according to claim 1, it is characterised in that：First transparent conductive film layer
It is 0～1mm with the distance of battery edge, the second transparent conductive film layer and composite metal film layer are with the distance of battery edge
0.1～1.5mm.
5. a kind of heterojunction solar battery according to claim 1, it is characterised in that：The composite metal film layer bag
Containing metal conducting layer and coat of metal, wherein metal conducting layer is copper, and coat of metal is possess good antioxygenic property
Metal material, the composite metal film thickness degree be 100～1000nm, sheet resistance be less than 0.5 Ω/.
6. a kind of heterojunction solar battery according to claim 1, it is characterised in that：The metal grid lines positive electricity is extremely more
Main grid pattern silver grating line electrode, the metal grid lines positive electrode silver paste resistivity is less than 1E-5 Ω .CM, per mm in width welding
Welding pulling force is more than 0.5N.
7. a kind of heterojunction solar battery according to claim 1, it is characterised in that：The metal primary back electrode is many
Main grid is less than 1E-3 Ω .CM without thin gate pattern silver grating line electrode, silver paste resistivity, is more than per mm in width welding welding pulling force
0.7N。
8. a kind of module of heterojunction solar battery, it is characterised in that：Including backboard body, the first encapsulation being located on backboard body
Glue, the solar cell multiple as claimed in claim 1 being located on the first packaging plastic, the solar cell is connected by welding
Battery strings are connected into, if the second packaging plastic on the solar cell, first packaging plastic, the second packaging plastic are coated on solar energy
The surrounding of battery and welding, the front plate body being located on the second packaging plastic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620801907.2U CN206098402U (en) | 2016-07-27 | 2016-07-27 | Heterojunction solar cell and module thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620801907.2U CN206098402U (en) | 2016-07-27 | 2016-07-27 | Heterojunction solar cell and module thereof |
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| Publication Number | Publication Date |
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| CN206098402U true CN206098402U (en) | 2017-04-12 |
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ID=58467186
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| CN201620801907.2U Active CN206098402U (en) | 2016-07-27 | 2016-07-27 | Heterojunction solar cell and module thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987536A (en) * | 2017-06-01 | 2018-12-11 | 福建金石能源有限公司 | A kind of production method of single side power generation heterojunction solar battery |
| CN109378350A (en) * | 2018-12-03 | 2019-02-22 | 江苏中宇光伏科技有限公司 | A kind of solar battery and its packaging technology |
| CN109860314A (en) * | 2018-10-29 | 2019-06-07 | 福建金石能源有限公司 | A kind of generating electricity on two sides imbrication monocrystalline silicon heterojunction solar cell and its mould group |
| CN110729377A (en) * | 2018-07-16 | 2020-01-24 | 福建金石能源有限公司 | Preparation method of double-sided power generation heterojunction solar cell and tile-stacked module thereof |
| CN110957379A (en) * | 2019-11-29 | 2020-04-03 | 晋能光伏技术有限责任公司 | Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell |
| CN111640802A (en) * | 2020-04-20 | 2020-09-08 | 常州比太黑硅科技有限公司 | HIT battery without back silver electrode and manufacturing method thereof |
-
2016
- 2016-07-27 CN CN201620801907.2U patent/CN206098402U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987536A (en) * | 2017-06-01 | 2018-12-11 | 福建金石能源有限公司 | A kind of production method of single side power generation heterojunction solar battery |
| CN110729377A (en) * | 2018-07-16 | 2020-01-24 | 福建金石能源有限公司 | Preparation method of double-sided power generation heterojunction solar cell and tile-stacked module thereof |
| CN109860314A (en) * | 2018-10-29 | 2019-06-07 | 福建金石能源有限公司 | A kind of generating electricity on two sides imbrication monocrystalline silicon heterojunction solar cell and its mould group |
| CN109378350A (en) * | 2018-12-03 | 2019-02-22 | 江苏中宇光伏科技有限公司 | A kind of solar battery and its packaging technology |
| CN110957379A (en) * | 2019-11-29 | 2020-04-03 | 晋能光伏技术有限责任公司 | Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell |
| CN111640802A (en) * | 2020-04-20 | 2020-09-08 | 常州比太黑硅科技有限公司 | HIT battery without back silver electrode and manufacturing method thereof |
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