CN205645828U - Heterojunction solar cell - Google Patents
Heterojunction solar cell Download PDFInfo
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- CN205645828U CN205645828U CN201620202671.0U CN201620202671U CN205645828U CN 205645828 U CN205645828 U CN 205645828U CN 201620202671 U CN201620202671 U CN 201620202671U CN 205645828 U CN205645828 U CN 205645828U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a heterojunction solar cell includes: N type monocrystalline silicon piece, establish at n the first intrinsic amorphous silicon thin film layer of type monocrystalline silicon piece sensitive surface, establish the first doping amorphous silicon thin film layer on first intrinsic amorphous silicon thin film layer, establish the first transparent conduction film layer on first doping amorphous silicon thin film layer, establish the metal grid line positive electrode on first transparent conduction film layer, establish at n the second intrinsic amorphous silicon thin film layer of the type monocrystalline silicon piece face of being shaded, establish the second doping amorphous silicon thin film layer on second intrinsic amorphous silicon thin film layer, establish the transparent conduction film layer of second on second doping amorphous silicon thin film layer, establish copper conducting layer and monel protective layer on the transparent conduction film layer of second. The utility model discloses an adopt low, with low costs copper conducting layer of resistivity and monel protective layer, replace dear low temperature silver thick liquid grid line and as the battery back electrode, reduced battery electrode manufacturing cost by a wide margin.
Description
Technical field
This utility model relates to area of solar cell, particularly relates to a kind of heterojunction solar battery.
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electric energy, at illumination condition
Lower inside solar energy battery can produce photogenerated current, is exported by electric energy by electrode.In recent years, the sun
Can battery production technology constantly improve, production cost constantly reduces, and conversion efficiency improves constantly, the sun
Can the application of cell power generation increasingly extensive and become the important energy source of supply of electric power.Heterojunction solar electricity
Pond is the battery technology that one of which is new and effective, and it combines monocrystaline silicon solar cell and non-crystalline silicon
The advantage of solaode, has that preparation technology temperature is low, conversion efficiency is higher, hot properties is good
Feature, therefore has the biggest market potential.
Existing heterojunction solar battery basic structure is as follows: heavy in n-type monocrystalline silicon piece front and back
Long-pending one layer of intrinsic amorphous silicon layer；P-type non-crystalline silicon is deposited respectively on the intrinsic amorphous silicon layer surface at the positive back side
Layer and n-type amorphous silicon layer；Positive backside deposition nesa coating at battery；Make in battery both sides
Silver gate electrode, whole preparation process is all carried out at less than 220 DEG C.
From above-mentioned existing heterojunction solar battery basic structure it can be seen that heterojunction solar is electric
Pond preparation process is all carried out under 220 degree, needs to use low-temperature silver slurry to make gate line electrode, low-temperature silver
The high temperature silver slurry contrast that slurry and current crystal silicon battery use, printing width is wider, and consumption is bigger, city
Field price is much more expensive, and the silver slurry consumption that additionally cell backside uses is typically 2～3 times of front, because of
This back silver slurry grid line is added significantly to the production cost of battery.
Utility model content
For the problems referred to above, this utility model provides a kind of heterojunction solar battery, solves different
The shortcoming that in matter joint solar cell preparation process, silver grating line electrode cost is high.
For solving above-mentioned technical problem, this utility model be the technical scheme is that a kind of hetero-junctions
Solaode, its structure includes: n-type monocrystalline silicon piece, be located at the of n-type monocrystalline silicon piece sensitive surface
One intrinsic amorphous silicon thin layer, the first doped amorphous silicon being located on first intrinsic amorphous silicon film layer are thin
Film layer, the first transparent conductive film layer being located on the first doped amorphous silicon film layer, it is located at first saturating
Metal grid lines anelectrode on bright conductive membrane layer；It is located at the second intrinsic of n-type monocrystalline silicon piece shady face
Amorphous thin Film layers；The the second doped amorphous silicon film layer being located on the second intrinsic amorphous silicon thin layer,
The the second transparent conductive film layer being located on the second doped amorphous silicon film layer, is located at the second electrically conducting transparent
Copper conductive layer on thin layer and monel protective layer.
Further, when described first doped amorphous silicon film layer is n-type amorphous thin Film layers, then
Two doped amorphous silicon film layers are p-type amorphous thin Film layers；Described first doped amorphous silicon film layer is
During p-type amorphous thin Film layers, then the second doped amorphous silicon film layer is n-type amorphous thin Film layers.
Further, described first intrinsic amorphous silicon film layer thickness is the 3～10nm, first doping amorphous
Silicon membrane layer thickness is 3～10nm；Second intrinsic amorphous silicon thin film layer thickness is 3～10nm, second to mix
Miscellaneous amorphous silicon membrane layer thickness is 3～10nm.
Further, the thickness of described copper conductive layer and monel protective layer is 200～1000nm.
Further, described metal grid lines positive electricity extremely silver grating line anelectrode.
Further, described first transparent conductive film layer is 0.1～1mm with the distance of battery edge,
Second transparent conductive film layer and copper conductive layer and monel protective layer with the distance of battery edge are
0.1～1mm.
Further, described first transparent conductive film layer, the second transparent conductive film layer are Indium sesquioxide.
At least one in tin thin film layer, Al-Doped ZnO film layer, tungsten-doped indium oxide layer.
Further, the thickness of described first transparent conductive film layer is 10～150nm, second transparent
The thickness of conductive membrane layer is 10～150nm.
From the above-mentioned description to this utility model structure, compared to the prior art, this utility model
Have the advantage that
This utility model one heterojunction solar battery, the copper of low cost low by employing resistivity
Conductive layer and monel protective layer, substitute expensive low-temperature silver slurry grid line as cell backside electrode,
Significantly reduce battery electrode production cost, decrease the electric current nesa coating at conduction rate variance simultaneously
Upper transmission, adds the absorption of cell backside reflection light, thus improves fill factor, curve factor and the short circuit of battery
Electric current, improves the conversion efficiency of battery.
Accompanying drawing explanation
The accompanying drawing of the part constituting the application is used for providing being further appreciated by of the present utility model, this
The schematic description and description of utility model is used for explaining this utility model, is not intended that this reality
With novel improper restriction.In the accompanying drawings:
Fig. 1 is the structural representation of a kind of heterojunction solar battery of this utility model.
Fig. 2 is the enlarged drawing of A in this utility model Fig. 1.
Fig. 3 is the schematic diagram of this utility model grid line anelectrode many main grids pattern.
Fig. 4 is the schematic diagram of this utility model grid line anelectrode dereliction gate pattern.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with
Drawings and Examples, are further elaborated to this utility model.Should be appreciated that this place is retouched
The specific embodiment stated, only in order to explain this utility model, is not used to limit this utility model.
Embodiment
As it is shown in figure 1, this utility model carries a kind of heterojunction solar battery, comprising: n-type monocrystalline
Silicon chip 1, is located at the first intrinsic amorphous silicon film layer 2 of n-type monocrystalline silicon piece 1 sensitive surface, is located at first
The first doped amorphous silicon film layer 4 on intrinsic amorphous silicon thin layer 2, is located at the first doped amorphous silicon thin
The first transparent conductive film layer 6 on film layer 4, is located at the metal gate on the first transparent conductive film layer 6
Line anelectrode 8；It is located at the second intrinsic amorphous silicon thin layer 3 of n-type monocrystalline silicon piece 1 shady face, is located at
The second doped amorphous silicon film layer 5 on second intrinsic amorphous silicon thin layer 3, is located at the second doping amorphous
The second transparent conductive film layer 7 on silicon membrane layer 5, is located at the copper on the second transparent conductive film layer 7
Conductive layer and monel protective layer 9.
When wherein the first doped amorphous silicon film layer 4 is n-type amorphous thin Film layers, the second doping amorphous
Silicon membrane layer 5 is then p-type amorphous thin Film layers；First doped amorphous silicon film layer 4 is p-type amorphous
During silicon membrane layer, the second doped amorphous silicon film layer 5 is then n-type amorphous thin Film layers.First intrinsic
Amorphous thin Film layers 2 thickness be the 3～10nm, first doped amorphous silicon film layer 4 thickness be 3～10nm；
Second intrinsic amorphous silicon thin layer 3 thickness is that the 3～10nm, second doped amorphous silicon film layer 5 thickness is
3～10nm.Copper conductive layer and monel protective layer 9 thickness of electrode are 200～1000nm.Copper conducts electricity
Layer and monel protective layer 9 use physical gas phase deposition technology to be formed.
As in figure 2 it is shown, the first transparent conductive film layer 6 and the second transparent conductive film layer 7 are oxidation
At least one in indium tin thin film, Al-Doped ZnO film, tungsten-doped indium oxide, thickness is 10～150nm.
Described first transparent conductive film layer 6 and the second transparent conductive film layer 7 use physical vapour deposition (PVD) skill
Art is formed.First transparent conductive film layer 6 is 0.1～1mm, second with distance H1 of battery edge
Transparent conductive film layer 7 and copper conductive layer and monel protective layer 9 with distance H2 of battery edge are
0.1～1mm.Avoid battery in edge shorting phenomenon.
As shown in Figure 3,4, described metal grid lines anelectrode 8 is silver grating line electrode, grid line anelectrode 8
Can be many main grids pattern or dereliction gate pattern.
In this utility model, cell backside electrode conducts electricity by using resistivity copper low, low cost
Layer and monel protective layer, the low-temperature silver slurry grid line of replacement costliness is as cell backside electrode, significantly
Reduce battery electrode production cost, decrease electric current simultaneously and upload at the nesa coating of conduction rate variance
Defeated, add the absorption of cell backside reflection light, thus improve fill factor, curve factor and the short circuit current of battery,
Improve the conversion efficiency of battery.
The foregoing is only preferred embodiment of the present utility model, not new in order to limit this practicality
Type, all any amendment, equivalent and improvement made within spirit of the present utility model and principle
Deng, within should be included in protection domain of the present utility model.
Claims (8)
1. a heterojunction solar battery, it is characterized in that: its structure includes: n-type monocrystalline silicon piece, the first intrinsic amorphous silicon film layer being located at n-type monocrystalline silicon piece sensitive surface, the first doped amorphous silicon film layer of being located on first intrinsic amorphous silicon film layer, the the first transparent conductive film layer being located on the first doped amorphous silicon film layer, is located at the metal grid lines anelectrode on the first transparent conductive film layer；It is located at the second intrinsic amorphous silicon thin layer of n-type monocrystalline silicon piece shady face；The the second doped amorphous silicon film layer being located on the second intrinsic amorphous silicon thin layer, the second transparent conductive film layer being located on the second doped amorphous silicon film layer, it is located at the copper conductive layer on the second transparent conductive film layer and monel protective layer.
A kind of heterojunction solar battery, it is characterised in that: when described first doped amorphous silicon film layer is n-type amorphous thin Film layers, then the second doped amorphous silicon film layer is p-type amorphous thin Film layers；When described first doped amorphous silicon film layer is p-type amorphous thin Film layers, then the second doped amorphous silicon film layer is n-type amorphous thin Film layers.
A kind of heterojunction solar battery, it is characterised in that: described first intrinsic amorphous silicon film layer thickness be the 3～10nm, first doped amorphous silicon film layer thickness be 3～10nm；Second intrinsic amorphous silicon thin film layer thickness be the 3～10nm, second doped amorphous silicon film layer thickness be 3～10nm.
A kind of heterojunction solar battery, it is characterised in that: the thickness of described copper conductive layer and monel protective layer is 200～1000nm.
A kind of heterojunction solar battery, it is characterised in that: described metal grid lines positive electricity extremely silver grating line anelectrode.
A kind of heterojunction solar battery, it is characterised in that: described first transparent conductive film layer is 0.1～1mm with the distance of battery edge, and the distance of the second transparent conductive film layer and copper conductive layer and battery edge is 0.1～1mm.
A kind of heterojunction solar battery, it is characterised in that: described first transparent conductive film layer, the second transparent conductive film layer are at least one in indium tin oxide films layer, Al-Doped ZnO film layer, tungsten-doped indium oxide layer.
A kind of heterojunction solar battery, it is characterised in that: the thickness of described first transparent conductive film layer be the thickness of the 10～150nm, second transparent conductive film layer be 10～150nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620202671.0U CN205645828U (en) | 2016-03-16 | 2016-03-16 | Heterojunction solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620202671.0U CN205645828U (en) | 2016-03-16 | 2016-03-16 | Heterojunction solar cell |
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| CN205645828U true CN205645828U (en) | 2016-10-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860314A (en) * | 2018-10-29 | 2019-06-07 | 福建金石能源有限公司 | A kind of generating electricity on two sides imbrication monocrystalline silicon heterojunction solar cell and its mould group |
| CN114447123A (en) * | 2020-11-02 | 2022-05-06 | 苏州阿特斯阳光电力科技有限公司 | Heterojunction solar cell and photovoltaic module |
-
2016
- 2016-03-16 CN CN201620202671.0U patent/CN205645828U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860314A (en) * | 2018-10-29 | 2019-06-07 | 福建金石能源有限公司 | A kind of generating electricity on two sides imbrication monocrystalline silicon heterojunction solar cell and its mould group |
| CN114447123A (en) * | 2020-11-02 | 2022-05-06 | 苏州阿特斯阳光电力科技有限公司 | Heterojunction solar cell and photovoltaic module |
| CN114447123B (en) * | 2020-11-02 | 2024-05-14 | 苏州阿特斯阳光电力科技有限公司 | Heterojunction solar cell and photovoltaic module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190530 Address after: 351111 No. 655, Guo Huan Dong Road, Hanjiang District, Putian, Fujian Co-patentee after: GS-SOLAR (CHINA) CO., LTD. Patentee after: Fujian Great Power Co., Ltd. Address before: 362000 Jinsun Industrial Park 1303 Nanhuan Road, Licheng District, Quanzhou City, Fujian Province Patentee before: GS-SOLAR (CHINA) CO., LTD. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211220 Address after: No.17, Quanyuan Road, Jinjiang Economic Development Zone (wuliyuan), Quanzhou City, Fujian Province, 362000 Patentee after: FUJIAN JINSHI ENERGY Co.,Ltd. Address before: 351111 No. 655, Guo Huan Dong Road, Hanjiang District, Putian, Fujian Patentee before: FUJIAN JP-SOLAR Co.,Ltd. Patentee before: Junshi (China) energy Co., Ltd |