CN114447123B - Heterojunction solar cell and photovoltaic module - Google Patents
Heterojunction solar cell and photovoltaic module Download PDFInfo
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- CN114447123B CN114447123B CN202011204012.8A CN202011204012A CN114447123B CN 114447123 B CN114447123 B CN 114447123B CN 202011204012 A CN202011204012 A CN 202011204012A CN 114447123 B CN114447123 B CN 114447123B
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- 239000002131 composite material Substances 0.000 claims abstract description 99
- 239000002245 particle Substances 0.000 claims abstract description 90
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 88
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 85
- 229910052709 silver Inorganic materials 0.000 claims abstract description 75
- 239000004332 silver Substances 0.000 claims abstract description 75
- 210000004027 cell Anatomy 0.000 claims abstract description 68
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 44
- 239000011521 glass Substances 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 210000005056 cell body Anatomy 0.000 claims abstract description 16
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 176
- 239000010408 film Substances 0.000 description 145
- 229910021417 amorphous silicon Inorganic materials 0.000 description 50
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a heterojunction solar cell and a photovoltaic module, wherein the heterojunction solar cell comprises a cell body, a first transparent conductive film layer arranged on one side of a light receiving surface of the cell body, and a second transparent conductive film layer arranged on one side of a back surface of the cell body, and the heterojunction solar cell further comprises a composite grid line arranged on the surface of the first transparent conductive film layer and/or the second transparent conductive film layer, wherein the composite grid line contains at least one of silver-coated nickel particles, silver-coated copper particles, silver-coated aluminum particles, silver-coated glass powder particles, nickel-coated carbon particles and nickel particles; the invention provides a composite grid line with a grid line structure different from that of the traditional low-temperature conductive silver paste, provides more choices for manufacturing the collecting electrode of the heterojunction solar cell, can effectively reduce the manufacturing cost of the heterojunction solar cell, can improve the problem of high contact resistivity of the low-temperature conductive silver paste in the prior art, and reduces the loss of the filling factor FF.
Description
Technical Field
The invention relates to the field of photovoltaic manufacturing, in particular to a heterojunction solar cell and a photovoltaic module.
Background
The heterojunction solar cell is a relatively efficient crystalline silicon solar cell at present, combines the characteristics of a crystalline silicon cell and a silicon-based thin film cell, and has the advantages of short manufacturing flow, low process temperature, high conversion efficiency, high generated energy and the like. The heterojunction solar cell has a small temperature degradation coefficient, and double-sided power generation, so that the annual power generation capacity can be 15-30% higher than that of a common polycrystalline silicon cell under the same area condition, and the heterojunction solar cell has great market potential.
The heterojunction solar cell in the prior art comprises a first collector electrode, a first transparent conductive film layer, a first doped amorphous layer, a first intrinsic amorphous layer, a silicon substrate, a second intrinsic amorphous layer, a second doped amorphous layer, a second transparent conductive film layer and a second collector electrode from a light receiving surface side to a backlight surface side. The first and second collectors referred to herein typically each include a main gate and a sub-gate connected to each other.
In the prior art, the method is limited by a low-temperature process, when the first collector electrode and the second collector electrode are printed by adopting a silk screen plate, only low-temperature conductive silver paste can be adopted, the manufacturing cost of the low-temperature conductive silver paste is high, the conductivity of the low-temperature conductive silver paste is poor, the contact resistivity is high, and the improvement of the filling factor FF of the heterojunction solar cell is not facilitated.
In view of the foregoing, there is a need for an improved solution to the above-mentioned problems.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a heterojunction solar cell which is specifically designed as follows.
The heterojunction solar cell comprises a cell body, a first transparent conductive film layer arranged on one side of a light receiving surface of the cell body, and a second transparent conductive film layer arranged on one side of a light receiving surface of the cell body, wherein the heterojunction solar cell further comprises a composite grid line arranged on the surface of the first transparent conductive film layer and/or the second transparent conductive film layer, and the composite grid line contains at least one of silver-coated nickel particles, silver-coated copper particles, silver-coated aluminum particles, silver-coated glass powder particles, nickel-coated carbon particles and nickel particles.
Further, when the composite grid line contains silver-coated nickel particles, silver-coated copper particles or silver-coated aluminum particles, the mass ratio of silver in the silver-coated nickel particles, the silver-coated copper particles and the silver-coated aluminum particles is 15% -25%; when the composite grid line contains silver-coated glass powder particles, the mass ratio of silver in the silver-coated glass powder particles is 50% -75%; when the composite grid line contains nickel-coated carbon particle components, the mass ratio of nickel in the nickel-coated carbon particles is 60% -75%.
Further, the particle size of the silver-coated nickel particles, the silver-coated copper particles, the silver-coated aluminum particles, the silver-coated glass powder particles, the nickel-coated carbon particles or the nickel particles in the composite grid line is 5-15 mu m.
Further, the composite grid line comprises a composite auxiliary grid, wherein the width of the composite auxiliary grid is 40-65 mu m, and the thickness of the composite auxiliary grid is 12-21 mu m.
Further, the composite auxiliary grid comprises a front composite auxiliary grid arranged on the surface of the first transparent conductive film layer and a back composite auxiliary grid arranged on the surface of the second transparent conductive film layer, and the width and the thickness of the front composite auxiliary grid are respectively smaller than those of the back composite auxiliary grid.
Further, the width of the front composite auxiliary grid is 40-60 mu m, and the thickness is 12-18 mu m; the width of the back composite auxiliary grid is 50-65 mu m, and the thickness is 14-21 mu m.
Further, the composite auxiliary grids comprise front composite auxiliary grids arranged on the surface of the first transparent conductive film layer and back composite auxiliary grids arranged on the surface of the second transparent conductive film layer, and the distance between every two adjacent front composite auxiliary grids is larger than the distance between every two adjacent back composite auxiliary grids.
Further, the distance between two adjacent front composite auxiliary grids is 1.5-2.0mm, and the distance between two adjacent back composite auxiliary grids is 1.0-1.9mm.
Further, the composite grid line arranged on the surface of the first transparent conductive film layer and/or the second transparent conductive film layer further comprises a composite main grid, wherein the width of the composite main grid is 0.1-0.2mm, and the thickness of the composite main grid is 17-33 mu m.
Further, the battery piece body comprises a silicon substrate, a first intrinsic amorphous layer and a first doped amorphous layer which are sequentially arranged on one side of a light receiving surface of the silicon substrate, a second intrinsic amorphous layer and a second doped amorphous layer, wherein the second intrinsic amorphous layer and the second doped amorphous layer are sequentially arranged on one side of a back surface of the silicon substrate, the doping type of the second doped amorphous layer is opposite to that of the first doped amorphous layer, and the first transparent conductive film and the second transparent conductive film are respectively arranged on the surfaces of one side, far away from the silicon substrate, of the first doped amorphous layer and the second doped amorphous layer.
The invention also provides a photovoltaic module, which comprises the heterojunction solar cell.
The beneficial effects of the invention are as follows: in the heterojunction solar cell, the composite grid line with the grid line structure different from that of the traditional low-temperature conductive silver paste is provided, more choices are provided for manufacturing the collector electrode of the heterojunction solar cell, the manufacturing cost of the heterojunction solar cell can be effectively reduced, the problem of high contact resistivity of the low-temperature conductive silver paste in the prior art can be improved, and the loss of the filling factor FF is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art. The front and back sides referred to herein are merely defined with respect to the positional relationship in the drawings of the embodiments, i.e., the front side corresponds to the upper surface of the drawings and the back side corresponds to the lower surface of the drawings.
FIG. 1 is a schematic plan view of a heterojunction solar cell of the present invention on a light-receiving surface side;
FIG. 2 is a schematic plan view of a back-light side of a heterojunction solar cell according to the present invention;
FIG. 3 is a schematic cross-sectional view of the heterojunction solar cell of FIG. 1 at the A-A' position;
Fig. 4 is a schematic structural diagram of a composite gate line according to the present invention.
In the figure, 10 is a silicon substrate, 21 is a first intrinsic amorphous layer, 31 is a first doped amorphous layer, 41 is a first transparent conductive film layer, 51 is a first collector, 511 is a front composite auxiliary gate, 512 is a front composite main gate, 22 is a second intrinsic amorphous layer, 32 is a second doped amorphous layer, 42 is a second transparent conductive film layer, 52 is a second collector, 521 is a back composite auxiliary gate, and 522 is a back composite main gate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a heterojunction solar cell, referring to fig. 3, the heterojunction solar cell comprises a cell body, a first transparent conductive film layer 41 arranged on one side of a light receiving surface of the cell body, and a second transparent conductive film layer 42 arranged on one side of the light receiving surface of the cell body.
In this embodiment, the battery body includes a silicon substrate 10, a first intrinsic amorphous layer 21 and a first doped amorphous layer 31 sequentially disposed on a light receiving surface side of the silicon substrate 10, and a second intrinsic amorphous layer 22 and a second doped amorphous layer 32 sequentially disposed on a backlight surface side of the silicon substrate 10. Accordingly, in this embodiment, the first transparent conductive film 41 and the second transparent conductive film 42 are respectively disposed on a side surface of the first doped amorphous layer 31 and the second doped amorphous layer 32 away from the silicon substrate 10.
The present invention provides a method for forming a battery cell body, comprising: providing a silicon substrate 10; forming a first intrinsic amorphous layer 21 and a second intrinsic amorphous layer 22 on a light receiving surface and a backlight surface of the silicon substrate 10 respectively through a PECVD process; a first doped amorphous layer 31 and a second doped amorphous layer 32 are formed on the surface of the first intrinsic amorphous layer 21 and the surface of the second intrinsic amorphous layer 22, respectively, by a PECVD process.
In addition, the first transparent conductive film 41 and the second transparent conductive film 42 according to the present invention may be formed on the surface of the first doped amorphous layer 31 and the surface of the second doped amorphous layer 32 by PVD processes, respectively. The first transparent conductive film layer 41 and the second transparent conductive film layer 42 may be ITO, IWO, ITO, or the like.
Preferably, the silicon substrate 10 according to the present invention is preferably a single crystal silicon substrate.
In a specific implementation process, the light receiving surface of the silicon substrate 10 in this embodiment is a surface of the heterojunction solar cell that directly receives solar light, and the back surface is a surface of the heterojunction solar cell that indirectly receives solar light, i.e. a surface opposite to the light receiving surface. The first and second intrinsic amorphous layers 21 and 22 are both intrinsic amorphous silicon. The doping types of the first doped amorphous layer 31 and the second doped amorphous layer 32 are opposite, wherein one of the doping types is N-type doping, namely phosphorus doping is adopted; the other is P-type doping, i.e. boron doping is used.
In the present invention, although the silicon substrate 10 may be a P-type silicon substrate, an N-type single crystal substrate silicon may be selected; but as a preferred embodiment of the present invention, the silicon substrate 10 is an N-type silicon substrate. Typically, the silicon substrate 10 has a thickness of 90-16um and a side length of 156-210mm. Further preferably, the first doped amorphous layer 31 is an N-type doped amorphous layer, and the second doped amorphous layer 32 is a P-type doped amorphous layer.
In the present invention, the heterojunction solar cell further comprises a composite gate line disposed on the surface of the first transparent conductive film layer 41 and/or the second transparent conductive film layer 42, and the composite sub-gate contains at least one of silver-coated nickel particles, silver-coated copper particles, silver-coated aluminum particles, silver-coated glass powder particles, nickel-coated carbon particles and nickel particles.
In the heterojunction solar cell, the composite grid line with the grid line structure different from that of the traditional low-temperature conductive silver paste is provided, more choices are provided for manufacturing the collector electrode of the heterojunction solar cell, the manufacturing cost of the heterojunction solar cell can be effectively reduced, the problem of high contact resistivity of the low-temperature conductive silver paste in the prior art can be improved, and the loss of the filling factor FF is reduced.
In more detail, in some embodiments of the present invention, when the composite gate line contains silver-coated nickel particles, silver-coated copper particles, or silver-coated aluminum particle components, the mass ratio of silver in the silver-coated nickel particles, silver-coated copper particles, and silver-coated aluminum particles is 15% -25%; when the composite grid line contains silver-coated glass powder particle components, the mass ratio of silver in the silver-coated glass powder particles is 50% -75%; when the composite grid line contains nickel-coated carbon particle components, the mass ratio of nickel in the nickel-coated carbon particles is 60% -75%.
Further, the particle diameter of the silver-coated nickel particles, the silver-coated copper particles, the silver-coated aluminum particles, the silver-coated glass powder particles, the nickel-coated carbon particles or the nickel particles in the composite grid line is 5-15 mu m.
The composite gate line according to the present invention includes the composite sub-gate, and in this embodiment, as shown in fig. 1,2, and 3, the surfaces of the first transparent conductive film layer 41 and the second transparent conductive film layer 42 are both provided with the composite sub-gate according to the present invention. Specifically, the composite sub-gate in this embodiment includes a front composite sub-gate 511 provided on the surface of the first transparent conductive film layer 41 and a rear composite sub-gate 521 provided on the surface of the second transparent conductive film layer 42.
It will be appreciated that in other embodiments of the present invention, only one of the first transparent conductive film layer 41 and the second transparent conductive film layer 42 may be provided with a composite sub-gate having the above-mentioned structure on the surface, and the other may be provided with a sub-gate structure, such as a silver sub-gate, similar to the conventional art.
Specifically, for the composite grid line related to the invention, nickel, copper and aluminum are respectively adopted to replace part of silver in the traditional low-temperature silver paste in the silver-coated nickel particles, the silver-coated copper particles and the silver-coated aluminum particles, and the form that the silver is coated outside is adopted, so that the conductivity is ensured, and meanwhile, the manufacturing cost of the conductive paste can be greatly reduced; in the silver-coated glass powder particles, due to the existence of glass powder, better contact can be formed between the silver-coated glass powder particles and the first transparent conductive film 41 or the second transparent conductive film 42 during the solidification and molding of the composite grid line, so that the contact resistance is reduced; the nickel coated carbon particles and the nickel particles completely replace silver particles designed in the prior art, and can also effectively reduce the manufacturing cost of the conductive paste.
The width of the composite auxiliary grid is 40-65 mu m, and the thickness is 12-21 mu m. Wherein the width and thickness of the front side composite sub-grid 511 are preferably smaller than the width and thickness of the back side composite sub-grid 521, respectively, as referred to in the present invention. In the specific implementation process, the width of the front composite auxiliary grid 511 involved in the invention is 40-60 μm, and the thickness is 12-18 μm; the width of the back composite sub-gate 521 is 50-65 μm and the thickness is 14-21 μm.
Based on the above arrangement, the shielding effect of each front composite auxiliary grid 511 on solar illumination is smaller than that of each back composite auxiliary grid 521, so that the light intensity of the front surface of the heterojunction solar cell can be effectively improved, and the photo-generated current can be improved.
It will be appreciated that the subgate referred to in the present invention may be a composite subgate or a conventional style subgate such as a silver subgate. Preferably, in the invention, the distance between two adjacent auxiliary grids on the light receiving surface side of the battery piece body is larger than the distance between two adjacent auxiliary grids on the back surface side of the battery piece body, namely the number of the auxiliary grids on the light receiving surface is smaller than that of the auxiliary grids on the back surface, and the auxiliary grid shielding area of the light receiving surface is smaller than that of the auxiliary grid shielding area of the back surface. Therefore, in a specific application scene, the effective illumination area of the light receiving surface can be improved due to the fact that the distance between two adjacent pairs of grids of the light receiving surface is large, the series resistance of the heterojunction solar cell can be reduced due to the fact that the distance between two adjacent pairs of grids of the backlight surface is small, and the photoelectric conversion efficiency of the heterojunction solar cell can be effectively optimized due to the fact that the two adjacent pairs of grids of the backlight surface are integrated.
In specific implementation, the distance between two adjacent grids at one side of the light-receiving surface of the battery piece body is 1.5-2.0mm; the distance between two adjacent pairs of grids on one side of the backlight surface of the battery piece body is 1.0-1.9mm.
It will be appreciated that in still other embodiments of the present invention, the sub-gate widths of the light-receiving surface and the sub-gate width of the backlight surface are uniform, and only the difference in the sub-gate pitch exists, and in particular, no further development is made herein.
In the present invention, the composite gate line disposed on the surface of the first transparent conductive film layer 41 and/or the second transparent conductive film layer 42 further includes a composite main gate.
As shown in fig. 1 and 2, in this embodiment, the surfaces of the first transparent conductive film layer 41 and the second transparent conductive film layer 42 are both provided with the composite main gate as described above. Specifically, the composite main gate in this embodiment includes a front composite main gate 512 disposed on the surface of the first transparent conductive film layer 41 and a back composite main gate 522 disposed on the surface of the second transparent conductive film layer 42.
It will be appreciated that in other embodiments of the present invention, only one of the first transparent conductive film layer 41 and the second transparent conductive film layer 42 may have a surface provided with the composite main gate of the above-mentioned structure, and the other may have the same main gate structure due to the conventional technology, such as a silver main gate.
In the specific implementation process, the width of the composite main grid is 0.1-0.2mm, and the thickness is 17-33 mu m.
It will be appreciated that the main gate referred to in the present invention may be a composite main gate or may be a conventional form of main gate, such as a silver main gate. The main gate and the sub-gate on the surface of the first transparent conductive film layer 41 form a first collector 51, and the main gate and the sub-gate on the surface of the second transparent conductive film layer 42 form a second collector 52. Specifically, in the embodiment shown in fig. 1 and 2, the front composite sub-gate 511 and the front composite main gate 512 together form the front collector 51, and the rear composite sub-gate 521 and the rear composite main gate 522 together form the rear collector 52.
Referring to fig. 4, which shows a schematic view of the structure of the composite gate line according to the present invention, the particle body 500 is a silver-coated nickel particle, a silver-coated copper particle, a silver-coated aluminum particle, a silver-coated glass powder particle, or a nickel-coated carbon particle, and the particle body 500 includes a coating layer 501 and an inner core 502 located inside the coating layer 501. Wherein, when the cladding layer 501 is a silver metal layer, the inner core 502 is a nickel metal core, a copper metal core, an aluminum metal core or a glass powder core; when the cladding 501 is a nickel metal layer, the core 502 is a carbon core.
Preferably, the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 according to the present invention each include at least two layers of intrinsic amorphous silicon films stacked one on top of the other, and in a specific implementation process, the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 with superior overall performance can be formed by controlling the characteristics of the intrinsic amorphous silicon films of each layer.
Specifically, the intrinsic amorphous silicon film hydrogen content in the first intrinsic amorphous layer 21 near the single crystal silicon substrate 10 is higher than the intrinsic amorphous silicon film hydrogen content far from the single crystal silicon substrate in the present invention, and the intrinsic amorphous silicon film hydrogen content in the second intrinsic amorphous layer 22 near the single crystal silicon substrate 10 is higher than the intrinsic amorphous silicon film hydrogen content far from the single crystal silicon substrate.
It is easier to understand that the more the intrinsic amorphous silicon film closer to the single crystal silicon substrate 10 in the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 has more obvious passivation effect on the intrinsic amorphous silicon film, the higher the hydrogen content of the intrinsic amorphous silicon film closer to the single crystal silicon substrate 10 can make the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 have the optimal passivation effect on the single crystal silicon substrate 10.
As a preferred embodiment, when the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 respectively include three layers of intrinsic amorphous silicon films stacked, the hydrogen content ranges of the three layers of intrinsic amorphous silicon films of the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 are 20% -40%, 10% -25%, 8% -20% in order in the direction away from the single crystal silicon substrate 10.
Preferably, the first doped amorphous layer 31 according to the present invention includes a first doped amorphous silicon film on the surface of the first intrinsic amorphous layer 21 and a doped amorphous silicon oxide film on the surface of the first doped amorphous silicon film.
The doped amorphous silicon oxide has more excellent light transmittance than the doped amorphous silicon. The first doped amorphous layer involved in the prior art is usually a single-layer doped amorphous silicon film structure; in this embodiment, the first doped amorphous layer 31 adopts a dual-layer film design, where the first doped amorphous silicon film can ensure that the first doped amorphous layer 31 and the first intrinsic amorphous layer 21 have better contact, and the doped amorphous silicon oxide film is equivalent to that the doped amorphous silicon oxide film with high light transmittance replaces part of the doped amorphous silicon in the prior art, so that the overall light transmittance of the first doped amorphous layer 31 can be improved, the loss of sunlight when passing through the first intrinsic amorphous layer and the first doped amorphous layer can be reduced, further the short-circuit current of the heterojunction solar cell can be improved, and the optimization of the photoelectric conversion efficiency is facilitated.
Based on the coordination of the first doped amorphous silicon film and the doped amorphous silicon oxide film, the heterojunction solar cell provided by the invention has relatively excellent optical and electrical properties.
In the specific implementation process, the thickness of the first doped amorphous silicon film is smaller than or equal to that of the doped amorphous silicon oxide film; preferably, the thickness of the first doped amorphous silicon film is generally smaller than the thickness of the doped amorphous silicon oxide film. Thus, the first doped amorphous layer 31 can have better light transmittance to a great extent while ensuring better contact between the first doped amorphous layer 31 and the first intrinsic amorphous layer 21.
In other embodiments of the present invention, the first doped amorphous layer 31 further includes a second doped amorphous silicon film on the surface of the doped amorphous silicon oxide film. The doped amorphous silicon generally has excellent conductivity, and the second doped amorphous silicon film can make the first doped amorphous layer 31 and the first transparent conductive film layer 41 have better contact, so that the contact resistance can be further reduced, and the battery has higher filling factor. In a specific implementation, the doping concentration of the second doped amorphous silicon film may be higher than the doping concentration of the first doped amorphous silicon film.
In this embodiment, the thickness of the second doped amorphous silicon film is less than or equal to the thickness of the doped amorphous silicon oxide film; preferably, the thickness of the second doped amorphous silicon film is also generally smaller than that of the doped amorphous silicon oxide film, so that the first doped amorphous layer 31 has better light transmittance.
Further, in still other embodiments of the present invention, the second doped amorphous layer 32 includes a third doped amorphous silicon film on the surface of the second intrinsic amorphous layer 22 and a fourth doped amorphous silicon film on the surface of the third doped amorphous silicon film and having a doping concentration greater than that of the third doped amorphous silicon film.
Preferably, the carrier concentration of the fourth doped amorphous silicon film is 5E 19-5E 21/cm3. Correspondingly, the carrier concentration of the third doped amorphous silicon film is set to be 5E 18-5E 19/cm3
In this embodiment, the third doped amorphous silicon film has a relatively low doping concentration, so that the influence on the second intrinsic amorphous layer 22 can be reduced, the lattice distortion of the second intrinsic amorphous layer 22 can be reduced, and the passivation effect of the back surface of the heterojunction solar cell can be effectively ensured; the fourth doped amorphous silicon film has relatively high doping concentration, so that the contact between the second doped amorphous layer 32 and the second transparent conductive film can be improved, the contact resistance between the second doped amorphous layer and the second transparent conductive film can be reduced, and the battery filling factor can be improved.
In the invention, the thickness of the third doped amorphous silicon film is smaller than or equal to that of the fourth doped amorphous silicon film; preferably, the thickness of the third doped amorphous silicon film is generally smaller than that of the fourth doped amorphous silicon film.
Preferably, in the present invention, the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 is smaller than the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32.
For the heterojunction solar cell, the influence of the light absorption effect of the light receiving surface on the photoelectric conversion efficiency of the cell is far greater than the influence of the light absorption effect of the backlight surface on the photoelectric conversion efficiency of the cell, and because the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 is smaller than the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32, the loss of sunlight on the light receiving surface when passing through the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 can be effectively reduced, the short-circuit current of the heterojunction solar cell can be improved, and the heterojunction solar cell has better photoelectric conversion efficiency.
In some more specific embodiments of the present invention, the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 is 6-21nm, and the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32 is 7-30nm.
As a further preference, the thickness of the first intrinsic amorphous layer 21 is less than or equal to the thickness of the second intrinsic amorphous layer 22, and the thickness of the first doped amorphous layer 31 is less than or equal to the thickness of the second doped amorphous layer 32.
In particular, the thickness of the first doped amorphous layer 31 is 3-15nm, and the thickness of the second doped amorphous layer 32 is 3-20nm. Accordingly, in the embodiment shown in FIG. 1, the thickness of the first intrinsic amorphous layer 21 is 3-6nm and the thickness of the second intrinsic amorphous layer 22 is 4-10nm.
It is further preferred that the thickness of the first doped amorphous layer 31 is 4-5nm and that the thickness of the second doped amorphous layer 32 is 4-5nm. Accordingly, in the embodiment shown in FIG. 1, the thickness of the first intrinsic amorphous layer 21 is 4-5nm and the thickness of the second intrinsic amorphous layer 22 is 5-6nm.
Further, in the present invention, the thickness of the first transparent conductive film layer 41 is less than or equal to the thickness of the second transparent conductive film layer 42. For the heterojunction solar cell, the thickness of the first transparent conductive film layer 41 is relatively small, so that the loss of sunlight on the light receiving surface when passing through the first transparent conductive film layer 41 can be effectively reduced, and further the heterojunction solar cell has good photoelectric conversion efficiency.
Typically, the thickness of the first transparent conductive film layer 41 and the second transparent conductive film layer 42 ranges from 65 to 75nm.
In the present invention, when the silicon substrate 10 is an N-type silicon substrate, the first doped amorphous layer 31 is an N-type doped amorphous layer, and the second doped amorphous layer 32 is a P-type doped amorphous layer. The first transparent conductive film 41 according to the present invention includes a first TCO film attached to the surface of the first doped amorphous layer 31 and a second TCO film (not shown) attached to the surface of the first TCO film, wherein the mass ratio of the doped oxide in the first TCO film 411 is greater than the mass ratio of the doped oxide in the second TCO film 412.
In the heterojunction solar cell structure provided by the invention, based on the specific design structure, the first TCO film can ensure good contact between the first transparent conductive film layer 41 and the first doped amorphous layer 31 due to high doping, so that the contact resistance is reduced, and the filling factor of the heterojunction solar cell can be improved; and the second TCO film can increase the transmittance of the first transparent conductive film layer 41 as a whole due to low doping energy, so as to increase the short-circuit current of the heterojunction solar cell.
Preferably, in the implementation of the present invention, the mass ratio of the doped oxide in the first TCO film is 5% -20% and the mass ratio of the doped oxide in the second TCO film is 0.5% -5%.
Further, the second transparent conductive film 42 in the present invention includes a third TCO film attached to the surface of the second doped amorphous layer 32 and a fourth TCO film attached to the surface of the third TCO film, where the mass ratio of the doped oxide in the third TCO film is smaller than the mass ratio of the doped oxide in the fourth TCO film.
Since the third TCO film is in direct contact with the second doped amorphous layer 32, the schottky contact barrier between the third TCO film and the second doped amorphous layer is reduced when the third TCO film has a lower concentration doping, so that the third TCO film and the second doped amorphous layer have optimal contact, and the filling factor of the heterojunction solar cell is improved. In addition, the fourth TCO film has better conductivity due to higher doping concentration, and has better electrical contact with the second collector electrode, so that the filling factor of the heterojunction solar cell can be improved. It can be appreciated that, since the second transparent conductive film layer 42 is located on the backlight surface of the heterojunction solar cell, the proportion of sunlight irradiated into the heterojunction solar cell through the second transparent conductive film layer 42 is very low in specific application, and the light transmittance of the heterojunction solar cell has little influence on the overall performance of the heterojunction solar cell.
In the specific implementation process, the mass ratio of the doped oxide in the third TCO film is 0.5% -5%, and the mass ratio of the doped oxide in the fourth TCO film is 5% -20%.
As a more specific embodiment, when the silicon substrate 10 is an N-type silicon substrate, the first doped amorphous layer 31 is an N-type doped amorphous layer, and the second doped amorphous layer 32 is a P-type doped amorphous layer. Each of the first transparent conductive film layer and the second transparent conductive film layer is an ITO film (i.e., formed of SnO2 doped indium oxide).
The first transparent conductive film layer 41 comprises two TCO layers on the light-receiving surface side of the battery piece body, wherein the first TCO film component is ITO (90:10), the film thickness is 5-10 nm, the second TCO film component is ITO (97:3), and the film thickness is 55-70 nm; on the backlight surface side of the cell body, the second transparent conductive film layer 42 also includes two TCO layers, the third TCO film component is ITO (97:3), the film thickness is 5-10 nm, the fourth TCO film component is ITO (90:10), and the film thickness is 55-70 nm.
It should be understood that the above-mentioned ITO (97:3) refers to an ITO film in which the mass ratio of indium oxide to SnO2 is 97:3, and the corresponding mass ratio of doped oxide (SnO 2) is 3%; ITO (90:10) means that the mass ratio of indium oxide to SnO2 in the ITO film is 90:10, and the mass ratio of the doped oxide (SnO 2) is 10%. .
In other embodiments of the present invention, the first transparent conductive film layer 41 and the second transparent conductive film layer 42 may also include only one TCO film, where the TCO film may be ITO (97:3) or ITO (90:10).
The invention also provides a photovoltaic module, which comprises the heterojunction solar cell.
The above list of detailed descriptions is only specific to practical embodiments of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent embodiments or modifications that do not depart from the spirit of the present invention should be included in the scope of the present invention.
Claims (11)
1. The heterojunction solar cell comprises a cell body, a first doped amorphous layer arranged on one side of a light receiving surface of the cell body, a first transparent conductive film layer arranged on one side surface of the first doped amorphous layer away from the cell body, and a second transparent conductive film layer arranged on one side of a backlight surface of the cell body, and is characterized by further comprising a composite grid line arranged on the surface of the first transparent conductive film layer and/or the second transparent conductive film layer, wherein the composite grid line contains at least one of silver-coated nickel particles, silver-coated copper particles, silver-coated aluminum particles, silver-coated glass powder particles, nickel-coated carbon particles and nickel particles;
The first transparent conductive film layer comprises a first TCO film attached to the surface of the first doped amorphous layer and a second TCO film attached to the surface of the first TCO film, wherein the mass ratio of oxide dopants in the first TCO film is 5% -20%, and the mass ratio of doped oxides in the second TCO film is 0.5% -5%.
2. The heterojunction solar cell of claim 1, wherein when the composite grid line contains silver-coated nickel particles, silver-coated copper particles or silver-coated aluminum particle components, the mass ratio of silver in the silver-coated nickel particles, the silver-coated copper particles and the silver-coated aluminum particles is 15% -25%; when the composite grid line contains silver-coated glass powder particles, the mass ratio of silver in the silver-coated glass powder particles is 50% -75%; when the composite grid line contains nickel-coated carbon particles, the mass ratio of nickel in the nickel-coated carbon particles is 60% -75%.
3. The heterojunction solar cell of claim 1, wherein the particle size of the silver-coated nickel particles, silver-coated copper particles, silver-coated aluminum particles, silver-coated glass frit particles, nickel-coated carbon particles or nickel particles in the composite grid line is 5-15 μm.
4. A heterojunction solar cell as claimed in any one of claims 1 to 3, wherein the composite gate line comprises a composite sub-gate having a width of 40-65 μm and a thickness of 12-21 μm.
5. The heterojunction solar cell of claim 4, wherein the composite auxiliary grid comprises a front composite auxiliary grid arranged on the surface of the first transparent conductive film layer and a back composite auxiliary grid arranged on the surface of the second transparent conductive film layer, and the width and the thickness of the front composite auxiliary grid are respectively smaller than those of the back composite auxiliary grid.
6. The heterojunction solar cell of claim 5, wherein the front-side composite sub-grid has a width of 40-60 μm and a thickness of 12-18 μm; the width of the back composite auxiliary grid is 50-65 mu m, and the thickness is 14-21 mu m.
7. The heterojunction solar cell of claim 4, wherein the composite auxiliary grid comprises a front composite auxiliary grid arranged on the surface of the first transparent conductive film layer and a back composite auxiliary grid arranged on the surface of the second transparent conductive film layer, and the distance between two adjacent front composite auxiliary grids is larger than the distance between two adjacent back composite auxiliary grids.
8. The heterojunction solar cell of claim 7, wherein a spacing between two adjacent ones of the front-side composite sub-grids is 1.5-2.0mm and a spacing between two adjacent ones of the back-side composite sub-grids is 1.0-1.9mm.
9. The heterojunction solar cell of any one of claims 1 to 3, wherein the composite gate line disposed on the surface of the first transparent conductive film layer and/or the second transparent conductive film layer further comprises a composite main gate having a width of 0.1 to 0.2mm and a thickness of 17 to 33 μm.
10. The heterojunction solar cell of any one of claims 1 to 3, wherein the cell body comprises a silicon substrate, a first intrinsic amorphous layer and a first doped amorphous layer sequentially arranged on one side of a light receiving surface of the silicon substrate, a second intrinsic amorphous layer sequentially arranged on one side of a back surface of the silicon substrate, and a second doped amorphous layer with a doping type opposite to that of the first doped amorphous layer, and the first transparent conductive film and the second transparent conductive film are respectively arranged on one side surfaces of the first doped amorphous layer and the second doped amorphous layer far away from the silicon substrate.
11. A photovoltaic module comprising a heterojunction solar cell as claimed in any one of claims 1 to 9.
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