CN108172640B - Cadmium telluride thin-film solar cell with double-sided power generation and preparation method thereof - Google Patents
Cadmium telluride thin-film solar cell with double-sided power generation and preparation method thereof Download PDFInfo
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000010248 power generation Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 23
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims abstract description 14
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 14
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims description 55
- 239000011521 glass Substances 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 18
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 15
- 239000005341 toughened glass Substances 0.000 claims description 12
- 239000005022 packaging material Substances 0.000 claims description 8
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 239000005329 float glass Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 3
- 229910052793 cadmium Inorganic materials 0.000 abstract description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000005357 flat glass Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002202 sandwich sublimation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a double-sided power generation cadmium telluride thin-film solar cell and a preparation method thereof. According to the invention, the p-type material cuprous thiocyanate is used as the back contact layer, the tungsten-doped indium oxide is used as the back electrode layer, so that the transparency of the back electrode of the cadmium telluride cell is realized, the double-sided power generation is realized, the power generation capacity of the cell is improved, meanwhile, the strong p-type back contact can improve the built-in electric field, the Voc and FF of the cadmium telluride solar cell are improved, and the performance of the cell is further improved.
Description
Technical Field
The invention relates to a cadmium telluride thin-film solar cell with double-sided power generation and a preparation method thereof, belonging to the technical field of solar cells.
Background
The cadmium telluride thin film solar cell is a compound semiconductor thin film solar cell taking CdTe as an absorption material, and is concerned by a plurality of scientific research institutions and enterprises due to the characteristics of optimal forbidden band width, good weak light effect, large light absorption coefficient, high theoretical conversion efficiency, low manufacturing cost and the like. The cadmium telluride theoretical conversion efficiency is as high as 28%, the maximum conversion efficiency of mass production is over 22%, and the cadmium telluride theoretical conversion efficiency still has wide development space. However, the back contact layer in the cadmium telluride thin-film solar cell is the carbon paste back contact layer, the back electrode is the metal layer back electrode, and the carbon paste and the metal are both opaque, so that the absorption layer of the cadmium telluride thin-film solar cell cannot absorb sunlight from the back surface, the cadmium telluride solar cell cannot generate electricity on two sides, and the conversion efficiency is further improved.
Disclosure of Invention
In view of the above, the present invention provides a cadmium telluride thin film solar cell capable of generating power on both sides and a method for manufacturing the same.
In order to solve the technical problems, the technical scheme of the invention firstly provides a cadmium telluride thin-film solar cell with double-sided power generation, which sequentially comprises a glass substrate layer, a transparent conductive film layer, a window layer, an absorption layer, a back contact layer, a back electrode layer, a packaging material layer and a back plate glass layer, and is characterized in that: the back contact layer is made of cuprous thiocyanate, and the back electrode layer is made of tungsten-doped indium oxide.
Further, the material of the glass substrate layer is selected from common float glass, ultra-white glass, tempered glass and semi-tempered glass.
Further, the material of the transparent conductive film layer is selected from fluorine-doped tin oxide.
Furthermore, the material of the window layer is cadmium sulfide, and the material of the absorption layer is cadmium telluride.
Further, the material of the encapsulating material layer is selected from POE, EVA and PVB.
Further, the material of the back plate glass layer is selected from tempered glass and semi-tempered glass.
Meanwhile, the invention also provides a preparation method of the double-sided power generation cadmium telluride thin film solar cell, which comprises the following steps:
(1) depositing fluorine-doped tin oxide on a glass substrate to form a transparent conductive film layer, wherein the deposition temperature is lower than 400 ℃;
(2) depositing cadmium sulfide on the transparent conductive film layer to form a window layer, wherein the deposition temperature is lower than 250 ℃;
(3) depositing cadmium telluride on the window layer to form an absorption layer, wherein the deposition temperature is lower than 300 ℃;
(4) depositing cuprous thiocyanate on the absorption layer to form a back contact layer, wherein the deposition temperature is lower than 300 ℃;
(5) depositing tungsten-doped indium oxide on the back contact layer to form a back electrode layer, wherein the deposition temperature is lower than 300 ℃;
(6) and laminating and packaging the glass substrate and the backboard glass with the packaging material.
Preferably, the deposition mode of each layer on the glass substrate adopts a low-temperature deposition mode, so that the glass substrate is prevented from deforming.
The back contact layer and the back electrode of the conventional cadmium telluride thin-film solar cell are opaque, so that sunlight cannot be absorbed from the back, and double-sided power generation is realized. However, the work function of the general transparent conductive material is low, and when the transparent conductive material is used as a back electrode, the contact potential barrier with the cadmium telluride material is too large, so that the transmission of holes is blocked, and the carrier collection efficiency of the solar cell is influenced. The invention adopts cuprous thiocyanate (CuSCN) to replace a carbon paste back contact layer, and tungsten-doped indium oxide replaces a metal layer back electrode. Because the tungsten-doped indium oxide is a transparent conductive oxide with extremely high transmittance, the transmittance of a visible light wave band exceeds 95%, and the tungsten-doped indium oxide has a high work function which is as high as 5.2eV, the tungsten-doped indium oxide is an ideal back electrode of the cadmium telluride thin film solar cell. And the transparent material cuprous thiocyanate is adopted to replace carbon slurry, so that back contact can be effectively formed, and the cuprous thiocyanate is a p-type material, so that the built-in electric field of the cadmium telluride solar cell is enhanced. The cuprous thiocyanate is used as a back contact layer, and the tungsten-doped indium oxide is used as a back electrode of the cadmium telluride solar cell, so that double-sided power generation of the cadmium telluride solar cell can be realized under the condition of good back contact.
Compared with the prior art, the cadmium telluride thin-film solar cell with double-sided power generation provided by the invention adopts p-type material cuprous thiocyanate as the back contact layer and the tungsten-doped indium oxide as the back electrode layer, so that the transparency of the back electrode of the cadmium telluride cell is realized, the double-sided power generation is realized, the power generation capacity of the cell is improved, meanwhile, the built-in electric field can be improved by strong p-type back contact, the Voc and FF of the cadmium telluride solar cell are improved, and the performance of the cell is improved.
Drawings
FIG. 1 is a schematic structural view of a double-sided power generation cadmium telluride thin film solar cell of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the present invention will be further described in detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1, the invention provides a double-sided power generation cadmium telluride thin film solar cell, which sequentially comprises a glass substrate layer 1, a transparent conductive film layer 2, a window layer 3, an absorption layer 4, a back contact layer 5, a back electrode layer 6, a packaging material layer 7 and a back plate glass layer 8, and is characterized in that: the back contact layer 5 is made of cuprous thiocyanate, and the back electrode layer 6 is made of tungsten-doped indium oxide.
It is preferred that the material of the glass substrate layer 1 is selected from the group consisting of ordinary float glass, ultra-white glass, tempered glass and semi-tempered glass.
It is preferable that the material of the transparent conductive film layer 2 is selected from fluorine-doped tin oxide.
It is further preferred that the material of the window layer 3 is cadmium sulfide and the material of the absorber layer 4 is cadmium telluride.
It is preferred that the material of the encapsulating material layer 7 is selected from POE, EVA and PVB.
It is preferred that the material of the back glass layer 8 is selected from tempered glass and semi-tempered glass.
The method for manufacturing a cadmium telluride thin film solar cell for double-sided power generation according to the present invention will be described below with reference to specific embodiments.
Example 1:
a preparation method of a double-sided power generation cadmium telluride thin film solar cell comprises the following steps:
(1) depositing fluorine-doped tin oxide on a glass substrate to form a transparent conductive film layer, wherein the deposition temperature is lower than 400 ℃;
(2) depositing cadmium sulfide on the transparent conductive film layer to form a window layer, wherein the deposition temperature is lower than 250 ℃;
(3) depositing cadmium telluride on the window layer to form an absorption layer, wherein the deposition temperature is lower than 300 ℃;
(4) depositing cuprous thiocyanate on the absorption layer to form a back contact layer, wherein the deposition temperature is lower than 300 ℃;
(5) depositing tungsten-doped indium oxide on the back contact layer to form a back electrode layer, wherein the deposition temperature is lower than 300 ℃;
(6) and laminating and packaging the glass substrate and the backboard glass deposited with each layer by using a POE packaging material to obtain the double-sided power generation cadmium telluride thin-film solar cell.
The deposition method is a close space sublimation method.
Example 2:
a preparation method of a double-sided power generation cadmium telluride thin film solar cell comprises the following steps:
(1) depositing fluorine-doped tin oxide on a glass substrate to form a transparent conductive film layer, wherein the deposition temperature is lower than 400 ℃;
(2) depositing cadmium sulfide on the transparent conductive film layer to form a window layer, wherein the deposition temperature is lower than 250 ℃;
(3) depositing cadmium telluride on the window layer to form an absorption layer, wherein the deposition temperature is lower than 300 ℃;
(4) depositing cuprous thiocyanate on the absorption layer to form a back contact layer, wherein the deposition temperature is lower than 300 ℃;
(5) depositing tungsten-doped indium oxide on the back contact layer to form a back electrode layer, wherein the deposition temperature is lower than 300 ℃;
(6) and laminating and packaging the glass substrate and the backboard glass of each deposited layer by using an EVA packaging material to obtain the double-sided power generation cadmium telluride thin-film solar cell.
The deposition method is a magnetron sputtering method.
Example 3 (comparative example):
a preparation method of a cadmium telluride thin film solar cell comprises the following steps:
(1) depositing fluorine-doped tin oxide on a glass substrate to form a transparent conductive film layer, wherein the deposition temperature is lower than 400 ℃;
(2) depositing cadmium sulfide on the transparent conductive film layer to form a window layer, wherein the deposition temperature is lower than 250 ℃;
(3) depositing cadmium telluride on the window layer to form an absorption layer, wherein the deposition temperature is lower than 300 ℃;
(4) depositing carbon paste on the absorption layer to form a back contact layer, wherein the deposition temperature is lower than 300 ℃;
(5) depositing metal nickel on the back contact layer to form a back electrode layer, wherein the deposition temperature is lower than 300 ℃;
(6) and laminating and encapsulating the glass substrate and the backboard glass deposited with each layer by using PVB encapsulating material to obtain the cadmium telluride thin-film solar cell.
The deposition method is a magnetron sputtering method.
The battery performance of the batteries obtained in the three examples is measured, and the specific data are shown in the following table:
as can be seen from the above table, the open-circuit voltage, the short-circuit current density, the fill factor and the efficiency of the embodiments 1 and 2 are higher than those of the embodiment 3, so that the double-sided power generation cadmium telluride thin film solar cell provided by the invention realizes the double-sided power generation of the cell, and improves the performance and the power generation capacity of the cell.
It should be noted that the above-mentioned embodiments should not be construed as limiting the present invention, and the scope of the present invention should be subject to the scope defined by the appended claims. It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the spirit and scope of the invention, and these modifications and adaptations should be considered within the scope of the invention.
Claims (4)
1. The utility model provides a cadmium telluride thin-film solar cell of two-sided electricity generation, includes glass substrate layer, transparent conductive film layer, window layer, absorbed layer, back of the body contact layer, back of the body electrode layer, packaging material layer and backplate glass layer in proper order, its characterized in that: the back contact layer is made of cuprous thiocyanate, and the back electrode layer is made of tungsten-doped indium oxide;
the preparation method of the double-sided power generation cadmium telluride thin film solar cell comprises the following steps:
(1) depositing fluorine-doped tin oxide on a glass substrate to form a transparent conductive film layer, wherein the deposition temperature is lower than 400 ℃;
(2) depositing cadmium sulfide on the transparent conductive film layer to form a window layer, wherein the deposition temperature is lower than 250 ℃;
(3) depositing cadmium telluride on the window layer to form an absorption layer, wherein the deposition temperature is lower than 300 ℃;
(4) depositing cuprous thiocyanate on the absorption layer to form a back contact layer, wherein the deposition temperature is lower than 300 ℃;
(5) depositing tungsten-doped indium oxide on the back contact layer to form a back electrode layer, wherein the deposition temperature is lower than 300 ℃;
(6) and laminating and packaging the glass substrate and the backboard glass with the packaging material.
2. The double-sided power generation cadmium telluride thin film solar cell of claim 1 wherein: the glass substrate layer is made of a material selected from common float glass, ultra-white glass, tempered glass and semi-tempered glass.
3. The double-sided power generation cadmium telluride thin film solar cell of claim 1 wherein: the material of the packaging material layer is selected from POE, EVA and PVB.
4. The double-sided power generation cadmium telluride thin film solar cell of claim 1 wherein: the material of the backboard glass layer is selected from tempered glass and semi-tempered glass.
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| CN111697085A (en) * | 2020-05-25 | 2020-09-22 | 中国建材国际工程集团有限公司 | Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof |
| CN112054079A (en) * | 2020-09-03 | 2020-12-08 | 成都中建材光电材料有限公司 | Power generation glass for building integrated photovoltaic and preparation method thereof |
| CN114361293B (en) * | 2021-12-29 | 2024-01-26 | 中国建材国际工程集团有限公司 | Double-sided power generation CdTe solar cell and manufacturing method thereof |
| CN115458616B (en) * | 2022-11-14 | 2023-03-10 | 成都中建材光电材料有限公司 | Double-sided power generation glass and manufacturing method thereof |
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| CN107039554A (en) * | 2016-12-28 | 2017-08-11 | 成都中建材光电材料有限公司 | A kind of cadmium telluride diaphragm solar battery and preparation method |
| CN206532786U (en) * | 2016-10-27 | 2017-09-29 | 惠州比亚迪实业有限公司 | A kind of solar cell |
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| CN107039554A (en) * | 2016-12-28 | 2017-08-11 | 成都中建材光电材料有限公司 | A kind of cadmium telluride diaphragm solar battery and preparation method |
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