CN207967053U - A kind of copper indium gallium selenide perovskite lamination solar cell - Google Patents
A kind of copper indium gallium selenide perovskite lamination solar cell Download PDFInfo
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Abstract
The utility model discloses a kind of copper indium gallium selenide perovskite lamination solar cell, base plate glass（1）It is equipped with one group of lamination solar cell unit, each unit includes：A. bottom battery, it is by conductive metal layer（2）, CIGS backlight absorbed layers（3）, In2S3 buffer layers（4）, Window layer（5）And intermediate electrode layer（6a）Composition；B. preceding battery, it is by catalysis electrode（7）, hole transmission layer（8）, calcium titanium ore bed（9）, dense insulating layer（10）With preceding electrode（6b）Composition；D. conductive metal layer, which is equipped with insulation layer P1, makes the anode of adjacent cell separate；E. electrode before setting channels in series P3（6b）And conductive metal layer（2）Connection, battery output positive and negative electrode are located at substrate both sides.The utility model is that a little light absorption utilization rate is high, and laminated cell output current is mutually matched, cascaded structure free of losses, and output voltage and photoelectric conversion efficiency are high；On the one hand bottom battery copper-indium-gallium-selenium layer is adjusted, realizes that the best match to sunlight absorbs, greatly improves the photoelectric conversion efficiency of solar cell.
Description
Technical field
The utility model is related to technical field of solar batteries, specifically a kind of copper indium gallium selenide perovskite laminate solar electricity
Pond.
Background technology
Solar cell is the element for directly converting light energy into electric energy, due to the range of solar radiation spectrum（0~4eV）
Very wide, according to photovoltaic effect principle, the single-unit solar cell being made of single semi-conducting material is only capable of solar radiation
A part of luminous energy in spectrum is converted into electric energy, and the effective rate of utilization of solar energy is low, and output voltage is low.
The effective means to solve the above problems is to match solar cell device material with the energy width of sunlight, is pressed
The sequence of energy gap from big to small from outside to inside in overlap, allow the shortest light of wavelength by ragged edge broad-band gap battery utilize, wavelength
Longer projects light energy, which enters, allows thin pillar battery to utilize, and is fully absorbed and the matched sunlight of its energy gap with each batteries
The photon ability for composing wave band, to realize that solar photovoltaic maximization efficiently uses, the solar cell with this structure is known as
Laminated cell.
Perovskite solar cell has reached 22% as the current photoelectric conversion efficiency of new and effective solar cell.It is main
By conducting base, compacted zone/insulating layer, calcium titanium ore bed, hole transmission layer（HTM）It is formed with catalytic counter electrodes, perovskite conduct
Absorbed layer plays a crucial role in the battery.By taking CH3NH3PbI as an example, perovskite thin film is partly led as direct band gap
Body, energy gap are that 1.55eV conductivity is 10-3S/m, carrier mobility 50cm2/ (Vs) absorption coefficients 105, delustring
Coefficient is higher, and hundreds of nanometers of thick films can fully absorb the sunlight within 400~800nm, the copper and indium gallium with narrow band gap
Se solar cell（Abbreviation CIGS）Lamination is carried out, the battery of higher transformation efficiency will be obtained（30%）.
Copper indium gallium selenide is quaternary compound semiconductor material, as component X changes its energy gap from 1.04eV from 0 to 1
Change to 1.69eV, as X=0.13, CuIn0.87Ga0.13Se2Energy gap close to 1.1eV, it is visible in sunlight except absorbing
Spectral region, the solar spectrum of also absorbable 700~1200nm.
In lamination copper indium gallium selenide and perovskite battery structure, for top layer perovskite for absorbing short wavelength's sunlight, bottom is narrow
Band gap material is for absorbing long wavelength's sunlight.Under same illumination condition, the current density of single-unit copper indium gallium selenium solar cell
Up to 25mA/cm2More than, and the current density of single-unit perovskite battery is equally up to 25mA/cm2More than, thus copper indium gallium selenide and
Photogenerated current preferably matches after perovskite battery forms lamination, noenergy loss.
In the recent period, Baden, Germany symbol Rustenburg state solar energy and Hydrogen Energy research center（ZSW）Scientists produce efficiency and be
The thin-film solar cells of 17.8% perovskite/CIGS mechanical lamination composition.California, USA university Yang Yang teaches project team system
It is standby go out efficiency be 15.5% tetra- electrode tips lamination solar cells of perovskite/CIGS (Yang Y, and Chen Q, et
al.ACS nano,2015,9(7)：7714-7721).China Electronics Technology Group Corporation No.18 Institute utilizes spin coating calcium titanium
The method of mine has prepared a kind of flexible CIGS/perovskite lamination solar cell（Publication No.：CN105470388A）.Described
The CdS that CIGS is used is as buffer layer.Chongqing Institute of Green and Intelligent Technology of the Chinese Academy of Sciences uses the concatenated mode system in four ends
For a kind of efficient CIGS/ perovskites series-connected solar cells（Publication No.：CN 106129053 A）, the laminated cell is using outer
The cathode of the anode of translucent perovskite solar cell and CIGS is chained up by portion's conducting wire, obtains efficient series-connected cell.North
Capital University of Science and Technology discloses a kind of flexible CIGS/perovskite lamination solar cell（Publication No.：CN 106558650 A）, use
Chemical bath deposition（CBD）CdS is as buffer layer.Although it has been reported that much attempting method prepares CIGS/ perovskites lamination too
Positive energy battery, however it is first to prepare a complete solar energy in substrate to sum up a kind of existing method of laminated cell preparation process
Battery, then each functional areas of second battery are prepared in another substrate, two substrates overlap to form the folded of respective individually lead
Layer battery device；Another method is to introduce middle composite layer superposition on CIGS successively perovskite battery is made, and realizes lamination
Inside battery is connected.But both lamination solar cells cannot reach two kinds of battery optimum states, preparation method and use
The preparation method of CdS has limitation, can not prepare with scale and realization.
Invention content
The purpose of this utility model is exactly that cannot reach two to solve lamination solar cell existing in the prior art
Kind of battery optimum state, preparation method and has limitation using the preparation method of CdS, can not prepare with scale and that realizes lack
Point provides a kind of copper indium gallium selenide perovskite lamination solar cell and preparation method thereof.
The technical solution adopted in the utility model is as follows：
A kind of copper indium gallium selenide perovskite lamination solar cell, including a base plate glass, base plate glass are equipped with one group
The lamination solar cell unit being sequentially connected in series, it is characterised in that each lamination solar cell unit includes：
A. bottom battery, it is the conductive metal layer, CIGS backlights absorbed layer, In2S3 by being successively set on base plate glass
Buffer layer, Window layer and intermediate electrode layer composition；
B. preceding battery, it is the catalysis electrode, hole transmission layer HTM, perovskite by being successively set in intermediate electrode layer
Layer, dense insulating layer and preceding electrode composition；
C. intermediate laminate glued membrane and cover-plate glass, the bottom battery of lamination and preceding battery both sides point are equipped on preceding electrode successively
It She You not edge seal glue；
D. the conductive metal layer on base plate glass is equipped with insulation layer P1, makes the bottom electricity of two adjacent layered cell elements
The anode in pond separates；
E., the channels in series P3 of lamination solar cell unit is set, before one end and this lamination solar cell unit
Electrode is connected, the other end is connect with the conductive metal layer of adjacent lamination solar cell unit, forms positive and negative anodes series connection, lamination
The side of solar battery cell is equipped with battery insulation area P2, P2 made of fine and close layer insulating, and channels in series P3 is folded with this
Layer solar cell unit separates.
Based on the above technical solution, there is scheme further below：
The output positive electrode and negative electrode of the copper indium gallium selenide perovskite lamination solar cell are by crossing technique all
It concentrates on electrically-conductive backing plate；
The base plate glass is the soda-lime glass of 10~40mm of thickness, conducting PET（Conducting PET is on PET base material
Sputter product transparent indium tin oxide ITO conductive films coating and obtained through the high temperature anneal）, sodium in the soda-lime glass
Mass percentage content is 5~30%；
The thickness of the Mo/CZ++ conductive metal layers 2 is 0.2~3.5 μm；
The CIGS backlights absorber thickness is 0.5~5 μm, and energy gap is 1.0~1.2eV；The buffer layer is
The In2S3 that 0.02~3 μm of thickness；The Window layer is the i-ZnO of 0.02~5 μm of thickness；The intermediate electrode layer is thickness
0.01~1 μm of AZO；
The catalysis electrode is Au, Pt or C of 0.01~0.1 μm of thickness；
The hole transmission layer HTM thickness is the spiro-MeOTAD of 100~200 nm（Chinese, 2,2', 7,
Two fluorenes of 7'- tetra- [N, N- bis- (4- methoxyphenyls) amino] -9,9'- spiral shells）；
It is CH3NH3PbI that the calcium titanium ore bed thickness, which is 200~300 nm,3-xClx（Chinese, methylamine chloro iodate
Lead）；
The dense insulating layer thickness is 10~100nm, 5~50nm of grain size, light transmittance>90% TiO2/Al2O3；
The preceding electrode is the AZO of 0.5~2mm of thickness；
The colloid is EVA film, Surlyn films or the uv-curable glue of 0.5~3mm of thickness.
A kind of method preparing copper indium gallium selenide perovskite lamination solar cell, includes the following steps：
1) cleans electrically-conductive backing plate；
2) prepares Mo/CuZn conductive metal layers using magnetron sputtering in substrate glasses；
3）It uses laser technology to complete one group of P1 scribing line, metal conducting layer insulation is cut into one group of making lamination sun
The part of energy battery unit, formation width are the areas P1 of 30~100nm；
4) is on conductive metal layer using being sequentially depositing Cu, In and Ga layers after magnetron sputtering, obtains CuInGa layers, then
Se is deposited using hot evaporation process on CuInGa layers, forms CIGS backlight absorbed layers；Or using steaming technique altogether on conductive metal
Deposition forms CIGS backlight absorbed layers simultaneously；
5) is sequentially prepared InS/ with sputtering sedimentation by vacuum evaporation deposition or chemical deposition on CIGS backlight absorbed layers
CdS buffer layers and i-ZnO Window layers；
6) deposits one layer of AZO film by direct current magnetron sputtering process in i-ZnO Window layers, as intermediate electrode layer；
7) deposits Au, Pt or C using magnetron sputtering in intermediate electrode layer, forms catalysis electrode, completes the system of bottom battery
Make；
8) prepares hole transmission layer HTM using spin coating proceeding or infusion process on catalysis electrode；
9) prepares calcium titanium ore bed on the hole transport layer using evaporation process；
10）Laser is used to complete the P2 scribing line of one group of quantity identical as P1（Each corresponding laminate solar of P2 scribing line
Battery unit）, form the regions P2 for 40~100nm with conductive layer contact width；
11) prepares insulating layer using silk-screen printing or sputtering technology on calcium titanium ore bed, and P2 fills up insulating layer in region
TiO2/Al2O3；
12) completes the P3 scribing line of one group of quantity identical as P1 using mechanical scratching（Each corresponding lamination of P3 scribing line
Solar battery cell, each regions P1P2P3 correspond to a layered cell elements）, formed and with conductive layer contact width be
The region of 50~120nm；
13) prepares electrode layer before the AZO of 0.5~2mm on the insulating layer using sputtering technology；It fills up and leads in the regions P3
Electric layer AZO and conductive layer unicom；
14) mechanical scratching is completed one group of P4 scribing line by, forms the clear area for 50~120nm with conductive layer contact width
Domain, each P4 scribing line separate adjacent lamination solar cell unit, realize adjacent layered cell elements positive electrode and negative electrode
Physical separation；P5 clear sides are completed using mechanical scratching simultaneously（Because when preparing film layer, base plate glass whole face is covered with respectively
Layer film, if do not cleared up, edge seal glue can be bonded in grown film layer when sealing, cause bond effect loosely, shadow
Ring life of product）, reserve the conductive layer area of 50~300mm；
15）It is by sealing margin glue and lamination glued membrane that electrode of substrate is bonding with cover-plate glass, complete copper indium gallium selenide calcium
The preparation of titanium ore lamination solar cell.
The utility model has the beneficial effects that the preceding battery of lamination solar cell uses perovskite solar battery structure,
Because its semiconductor energy gap is larger, the common calcium titanium ore bed only sunlight of 400~800nm of absorbable spectrum；Pass through adjusting
The perovskite battery light transmittance of thickness, preparation is more than 50%.The long wavelength part that battery absorbs before battery is not stacked in sunlight,
It is transmitted into the bottom battery of laminated cell, the CIGS solar cell on the battery of bottom can effectively absorb 800~1200nm too
Solar spectrum.I.e. this lamination solar cell can absorb the solar spectrum of 400~1200nm, and photoelectric conversion efficiency is higher than single
Perovskite solar cell or single copper indium gallium selenium solar cell.Single perovskite solar cell output voltage 0.65~
0.7V, single copper indium gallium selenium solar cell output voltage 0.7V or so, this lamination solar cell bottom battery is copper indium gallium selenide
Battery, catalysis electrode form a film on copper indium gallium selenide cathode AZO and form Ohmic contact, realize copper indium gallium selenide cell cathode and perovskite
Anode connects, cathode of the electrode as lamination solar cell before perovskite battery, copper indium gallium selenide cell and perovskite electricity
Pond is connected, and therefore, the output voltage of this lamination solar cell is up to 1.35*N V or more.
The utility model while being developed scribing line technique and realizing single series connection laminated cell using the CIGS preparation processes of no Cd
Baby battery is connected again, and the cell light absorption rate is high, and output voltage, electric current and photoelectric conversion efficiency are high.It provides simultaneously folded
The vacuum encapsulation process of layer battery, avoids steam from influencing perovskite efficiency, and then improves the service life of lamination solar cell.
Description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples：
Fig. 1 is the overall structure diagram of the utility model；
The structural schematic diagram of the single lamination solar cell unit of Fig. 2 the utility model.
Specific implementation mode
One, a kind of copper indium gallium selenide perovskite lamination solar cell provided by the utility model, as shown in Figure 1, including one
A base plate glass 1, base plate glass are equipped with one group of lamination solar cell unit being sequentially connected in series, the setting of the places left end P5 is positive,
Cathode is set at right end P5, and the described one group lamination solar cell unit being sequentially connected in series is arranged in glass cover-plate 13 in the following, two
End is equipped with edge seal glue 11.
, each lamination solar cell unit include（As shown in Figures 1 and 2）：
A. bottom battery, it is the conductive metal layer 2 by being successively set on base plate glass 1（Anode）, CIGS backlights absorb
Layer 3, In2S3 buffer layers 4, Window layer 5 and intermediate electrode layer 6a compositions；
B. preceding battery, it is the catalysis electrode 7, hole transmission layer HTM 8, calcium by being successively set on intermediate electrode layer 6a
Titanium ore layer 9, dense insulating layer 10 and preceding electrode 6b（Cathode）Composition；
C. intermediate laminate glued membrane 12 and cover-plate glass 13, referring to Fig. 1, whole copper and indium gallium are equipped on preceding electrode 6b successively
The bottom battery of the lamination at selenium perovskite lamination solar cell most edge and preceding battery both sides are respectively equipped with edge seal glue 11；
D. the conductive metal layer 2 on base plate glass 1 is equipped with insulation layer P1, makes the bottom of two adjacent layered cell elements
The anode of battery separates；
E., the channels in series P3 of lamination solar cell unit is set, before one end and this lamination solar cell unit
Electrode 6b（Cathode）It is connected, the conductive metal layer 2 of the other end and adjacent lamination solar cell unit（Anode）Connection is formed
The side of the positive and negative anodes channels in series of adjacent cell, lamination solar cell unit is equipped with made of fine and close layer insulating
P2, P2 separate channels in series P3 and this lamination solar cell unit in battery insulation area.
, as shown in Figure 1, in overall structure, P4 insulation layers are equipped between adjacent lamination solar cell unit, are exactly
Make an insulation cavity vertical, effect is that first layered cell elements is physically divided with next layered cell elements
It opens, ultimately forms output voltage height, high-power laminated cell.
The output positive electrode and negative electrode of the copper indium gallium selenide perovskite lamination solar cell are by crossing technique all
Concentrate on the both ends of substrate 1.
, soda-lime glass or conducting PET that the base plate glass 1 is 10~40mm of thickness（Conducting PET is in PET base material
Product transparent indium tin oxide ITO conductive films coating and obtained through the high temperature anneal is sputtered on material, belongs to known products）, institute
The mass percentage content for stating sodium in soda-lime glass is 5~30%.
The thickness of the Mo/CZ++ conductive metal layers 2 is 0.2~3.5 μm；
The CIGS backlights absorber thickness is 0.5~5 μm, and energy gap is 1.0~1.2eV；The buffer layer is
The In2S3 that 0.02~3 μm of thickness；The Window layer is the i-ZnO of 0.02~5 μm of thickness；The intermediate electrode layer is thickness
0.01~1 μm of AZO（Aluminium-doped zinc oxide ZnO）.
The catalysis electrode is Au, Pt or C of 0.01~0.1 μm of thickness；
The hole transmission layer HTM thickness is 100~200 nm spiro-MeOTAD（Chinese, 2,2', 7,7'-
Four [N, N- bis- (4- methoxyphenyls) amino] -9,9'- spiral shells, two fluorenes）；
It is CH3NH3PbI that the calcium titanium ore bed thickness, which is 200~300 nm,3-xClx（Chinese, methylamine chloro iodate
Lead）.
The dense insulating layer thickness is 10~100nm, 5~50nm of grain size, light transmittance>90% TiO2/Al2O3；
The preceding electrode is the AZO of 0.5~2mm of thickness.
The colloid is EVA film, Surlyn films or the uv-curable glue of 0.5~3mm of thickness.
Two, the utility model additionally provides a kind of method preparing copper indium gallium selenide perovskite lamination solar cell, including
Following steps（Referring to Fig. 1）：
1) cleans electrically-conductive backing plate 1；
2) prepares Mo/CuZn conductive metal layers 2 using magnetron sputtering in substrate glasses 1；
3）It uses laser technology to complete one group of P1 scribing line, metal conducting layer insulation is cut into one group of making lamination sun
The region of energy battery unit, formation width are the areas P1 of 30~100nm；
4) is sequentially depositing Cu, In and Ga layers on conductive metal layer, obtains CuInGa layers, then used on CuInGa layers
Se is deposited in hot evaporation process, forms CIGS backlights absorbed layer 3；Or it on conductive metal while depositing to be formed using steaming technique altogether
CIGS backlights absorbed layer 3；
5) is sequentially prepared InS/ with sputtering sedimentation by vacuum evaporation deposition or chemical deposition on CIGS backlight absorbed layers
CdS buffer layers 4 and i-ZnO Window layers 5；
6) deposits one layer of AZO film by direct current magnetron sputtering process in i-ZnO Window layers, as intermediate electrode layer 6a；
7) deposits Au, Pt or C using magnetron sputtering on intermediate electrode layer 6a, forms catalysis electrode 7, completes bottom battery
Making；
8) prepares hole transmission layer HTM 8 using spin coating proceeding or infusion process on catalysis electrode；
9) prepares calcium titanium ore bed 9 on the hole transport layer using evaporation process；
10）Laser is used to complete the P2 scribing line of one group of quantity identical as P1（Each corresponding laminate solar of P2 scribing line
Battery unit）, form the regions P2 for 40~100nm with 2 contact width of conductive layer；
11) prepares insulating layer 10 using silk-screen printing or sputtering technology on calcium titanium ore bed, and P2 fills up insulating layer in region
TiO2/Al2O3；
12) completes the P3 scribing line of one group of quantity identical as P1 using mechanical scratching（Each corresponding lamination of P3 scribing line
Solar battery cell, every group of region P1, P2, P3 correspond to a layered cell elements）, form the conduction with adjacent cells
The region that 2 contact width of layer are 50~120nm；
13) prepares electrode layer 6b before the AZO of 0.5~2mm on the insulating layer using sputtering technology；P3 is filled up in region
2 unicom of conductive layer of conductive layer AZO and adjacent cells；
14) mechanical scratching is completed one group of P4 scribing line by, forms the clear area for 50~120nm with conductive layer contact width
Domain, each P4 scribing line separate adjacent lamination solar cell unit, realize adjacent layered cell elements positive electrode and negative electrode
Physical separation；P5 clear sides are completed using mechanical scratching simultaneously（Because when preparing film layer, base plate glass whole face is covered with respectively
Layer film, if do not cleared up, edge seal glue can be bonded in grown film layer when sealing, cause bond effect loosely, shadow
Ring life of product）, reserve the conductive layer area of 50~300mm；
15）By sealing margin glue 11 and lamination glued membrane 12 that electrode of substrate is bonding with cover-plate glass, complete copper and indium gallium
The preparation of selenium perovskite lamination solar cell.
Battery is as side to light, when sunlight irradiates this face, preceding battery before the lamination solar cell of the utility model
In perovskite absorbed layer absorb after solar energy is excited, generate electron hole pair, electronics moves to perovskite in absorbed layer and inhales
It receives layer/HTM to detach behind interface, catalysis electrode is injected in electrode before battery before electron injection, hole, forms electricity before laminated cell
The anode in pond.In the copper indium gallium selenide cell structure of lamination solar cell hearth electrode, CIGS backlights absorbed layer as p-type structure,
Built-in P-N junction is formed with the buffer layer of N-type, Window layer, the solar irradiation of transmission stack battery negative electrodes is passed through in battery surface
Transparent intermediate electrode layer is absorbed by CIGS backlight absorbed layers and generates the son that shuts off, and absorbed layer is close under the action of built in field
Layer region, the carrier separation of different charges are buffered, negative electrical charge moves towards the cathode that intermediate electrode layer forms laminated cell, positive charge
The anode that bottom cell substrate forms laminated cell is moved towards, preceding battery is with bottom battery by being catalyzed positive electrode and bottom battery target
Cathode forms series connection, to constitute laminated cell.Solar energy is just endlessly converted into the electricity used for us as a result,
Energy.
The copper indium gallium selenide of the utility model/perovskite lamination solar cell, light absorption utilization rate is high, output voltage and light
Photoelectric transformation efficiency is high.And the preparation of each functional layer of laminated cell positive and negative electrode solar cell is interference-free each other, on the one hand
Battery layers before optimization improve light transmission rate while fully absorbing visible light, ensure bottom solar cell luminous flux；Another party
Face adjusts bottom battery layers, realizes the best match to solar cell, greatly improves the photoelectric conversion efficiency of solar cell,
And improve the service life of lamination solar cell.
The above descriptions are merely preferred embodiments of the present invention, not makees in any form to the utility model
Limitation；Any technical person familiar with the field, it is all available in the case where not departing from technical solutions of the utility model ambit
The methods and technical content of the disclosure above makes many possible changes and modifications to technical solutions of the utility model, or is revised as
The equivalent embodiment of equivalent variations.Therefore, every content without departing from technical solutions of the utility model, according to the utility model
Technical spirit any simple modification, equivalent replacement, equivalence changes and modification made to the above embodiment, still fall within this practicality
In the range of the protection of new technique scheme.
Claims (8)
1. a kind of copper indium gallium selenide perovskite lamination solar cell, including a base plate glass（1）, base plate glass is equipped with one group
The lamination solar cell unit being sequentially connected in series, it is characterised in that each lamination solar cell unit includes：
A. bottom battery, it is by being successively set on base plate glass（1）On conductive metal layer（2）, CIGS backlight absorbed layers（3）、
In2S3 buffer layers（4）, Window layer（5）And intermediate electrode layer（6a）Composition；
B. preceding battery, it is by being successively set on intermediate electrode layer（6a）On catalysis electrode（7）, hole transmission layer HTM（8）、
Calcium titanium ore bed（9）, dense insulating layer（10）With preceding electrode（6b）Composition；
C. preceding electrode（6b）On successively be equipped with intermediate laminate glued membrane（12）And cover-plate glass（13）, the bottom battery and preceding electricity of lamination
Pond both sides are respectively equipped with edge seal glue（11）；
D. base plate glass（1）On conductive metal layer（2）It is equipped with insulation layer P1, makes the bottom of two adjacent layered cell elements
The anode of battery separates；
E., the channels in series P3 of lamination solar cell unit, the preceding electrode of one end and this lamination solar cell unit are set
（6b）It is connected, the conductive metal layer of the other end and adjacent lamination solar cell unit（2）Connection forms positive and negative anodes series connection,
The side of lamination solar cell unit be equipped with battery insulation area P2, P2 made of fine and close layer insulating by channels in series P3 with
This lamination solar cell unit separates.
2. a kind of copper indium gallium selenide perovskite lamination solar cell according to claim 1, which is characterized in that the copper
The output positive electrode and negative electrode of indium gallium selenium perovskite lamination solar cell are all concentrated on electrically-conductive backing plate by technique of crossing.
3. a kind of copper indium gallium selenide perovskite lamination solar cell according to claim 1, which is characterized in that the substrate
Glass（1）Soda-lime glass, conducting PET for 10~40mm of thickness, in the soda-lime glass mass percentage content of sodium be 5~
30%。
4. a kind of copper indium gallium selenide perovskite lamination solar cell according to claim 1 or 3, which is characterized in that described
Conductive metal layer（2）Thickness be 0.2~3.5 μm；
The CIGS backlights absorber thickness is 0.5~5 μm, and energy gap is 1.0~1.2eV；The buffer layer is thickness
0.02~3 μm of In2S3；The Window layer is the i-ZnO of 0.02~5 μm of thickness；The intermediate electrode layer be thickness 0.01~
1 μm of AZO.
5. a kind of copper indium gallium selenide perovskite lamination solar cell according to claim 1 or 3, which is characterized in that described
Catalysis electrode is Au, Pt or C of 0.01~0.1 μm of thickness；
The hole transmission layer HTM thickness is 100~200 nm spiro-MeOTAD；
It is CH3NH3PbI that the calcium titanium ore bed thickness, which is 200~300 nm,3-xClx。
6. a kind of copper indium gallium selenide perovskite lamination solar cell according to claim 1 or 3, which is characterized in that described
Dense insulating layer thickness is 10~100nm, 5~50nm of grain size, light transmittance>90% TiO2/Al2O3。
7. a kind of copper indium gallium selenide perovskite lamination solar cell according to claim 1 or 3, which is characterized in that described
Preceding electrode is the AZO of 0.5~2mm of thickness.
8. a kind of copper indium gallium selenide perovskite lamination solar cell according to claim 1, which is characterized in that the edge
Fluid sealant is EVA film, Surlyn films or the uv-curable glue of 0.5~3mm of thickness.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155293A (en) * | 2017-12-30 | 2018-06-12 | 凯盛光伏材料有限公司 | A kind of copper indium gallium selenide perovskite lamination solar cell and preparation method thereof |
| CN110098273A (en) * | 2019-04-17 | 2019-08-06 | 上海空间电源研究所 | Multijunction gallium arsenide solar cell monomer integrates the preparation method of inline component |
| CN111463351A (en) * | 2020-05-06 | 2020-07-28 | 武汉理工大学 | Lead leakage prevention packaging structure of perovskite solar cell and packaging method thereof |
| CN112133830A (en) * | 2020-09-11 | 2020-12-25 | 上海黎元新能源科技有限公司 | 2-T perovskite laminated solar cell module and preparation method thereof |
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2017
- 2017-12-30 CN CN201721911114.7U patent/CN207967053U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155293A (en) * | 2017-12-30 | 2018-06-12 | 凯盛光伏材料有限公司 | A kind of copper indium gallium selenide perovskite lamination solar cell and preparation method thereof |
| CN110098273A (en) * | 2019-04-17 | 2019-08-06 | 上海空间电源研究所 | Multijunction gallium arsenide solar cell monomer integrates the preparation method of inline component |
| CN110098273B (en) * | 2019-04-17 | 2021-08-10 | 上海空间电源研究所 | Preparation method of single integrated inline component of multi-junction gallium arsenide solar cell |
| CN111463351A (en) * | 2020-05-06 | 2020-07-28 | 武汉理工大学 | Lead leakage prevention packaging structure of perovskite solar cell and packaging method thereof |
| CN112133830A (en) * | 2020-09-11 | 2020-12-25 | 上海黎元新能源科技有限公司 | 2-T perovskite laminated solar cell module and preparation method thereof |
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