CN207925499U - A kind of Cu2ZnSn(S,Se)4Thin-film solar cells - Google Patents
A kind of Cu2ZnSn(S,Se)4Thin-film solar cells Download PDFInfo
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- CN207925499U CN207925499U CN201820034857.9U CN201820034857U CN207925499U CN 207925499 U CN207925499 U CN 207925499U CN 201820034857 U CN201820034857 U CN 201820034857U CN 207925499 U CN207925499 U CN 207925499U
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Abstract
The utility model provides a kind of Cu2ZnSn(S,Se)4Thin-film solar cells is made of substrate compound successively, back electrode, back surface field layer, absorbed layer, buffer layer, Window layer and preceding electrode；The back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer or non-crystalline silicon back surface field layer；The absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer.Compared with prior art, Cu provided by the utility model2ZnSn(S,Se)4Thin-film solar cells has back surface field layer, can extend Cu2ZnSn(S,Se)4Cu is improved in the built in field distributed areas of thin-film solar cells2ZnSn(S,Se)4Total Built-in potential of thin-film solar cells forms photoproduction and lacks sub- potential barrier, is passivated Cu2ZnSn(S,Se)4Thin-film solar cells back surface, the Cu to make2ZnSn(S,Se)4Thin-film solar cells has good photovoltaic property.
Description
Technical field
The utility model is related to technical field of solar batteries, are to be related to a kind of Cu more specifically2ZnSn(S,Se)4It is thin
Film solar cell.
Background technology
Thin-film solar cells has the absorption coefficient for absorbing layer material high, electric compared to first generation crystal silicon solar energy battery
Pond thickness is thin, preparation process is simple, can prepare on flexible substrates, the advantages that application field is wide, of low cost.Thin film solar
Battery includes non-crystalline silicon (a-Si), polysilicon (poly-Si), GaAs (GaAs), cadmium telluride (CdTe), copper indium gallium selenide
(CuInxGa1-xSe2) etc. types, wherein CuInxGa1-xSe2The photoelectric conversion efficiency of thin-film solar cells has reached 22.6%,
Close to the transfer efficiency of monocrystaline silicon solar cell.But there are still include toxic element (Cd for these thin-film solar cells
Deng) or your dilute element (In etc.), material cost be difficult to effectively reduce, light-induced degradation the problems such as.
In recent years, with compound semiconductor Cu2ZnSn(S,Se)4Film causes people as the solar cell of absorbed layer
Extensive concern, it use glass/Mo/Cu2ZnSn(S,Se)4/CdS/i-ZnO/ZnO:The basic structure of Al/Ni-Al, has
The absorption coefficient of light that absorbs layer material is high, optical band gap is close to the optimal band gap magnitude of theory of unijunction solar cell absorbed layer, suction
The advantages that layer is without your toxic and dilute element is received, is expected to substitute traditional CuInxGa1-xSe2Thin-film solar cells.
Currently, the Cu prepared on a glass substrate2ZnSnS4The highest transfer efficiency of thin-film solar cells reaches
11.0%, the Cu after selenium (Se) is added in absorbed layer2ZnSn(S,Se)4The highest transfer efficiency of thin-film solar cells is
12.6%, these numerical value and CuInxGa1-xSe2The highest transfer efficiency 22.6% of thin-film solar cells is compared to there are still certain
Gap.And Cu2ZnSn(S,Se)4The transfer efficiency of thin-film solar cells is limited by relatively low open-circuit voltage, prior art transfer
Change the highest Cu of efficiency2ZnSn(S,Se)4Thin-film solar cells uses band gap for the absorbed layer of 1.13eV, battery open circuit voltage
Only 513.4mV, the numerical value differ 616.6mV with the open-circuit voltage ultimate maximum that absorbed layer band gap determines.Therefore, existing skill
Cu in art2ZnSn(S,Se)4The photovoltaic property of thin-film solar cells is also to be hoisted.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of Cu with good photovoltaic property2ZnSn(S,Se)4
Thin-film solar cells.
The utility model provides a kind of Cu2ZnSn(S,Se)4Thin-film solar cells, by substrate compound successively, back of the body electricity
Pole, back surface field layer, absorbed layer, buffer layer, Window layer and preceding electrode composition；
The back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer or non-crystalline silicon back surface field layer；
The absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer.
Preferably, the Cu2ZnSn(S,Se)4The band gap of absorbed layer be 1.0eV~1.5eV, hole concentration be 1 ×
1016cm-3~1 × 1019cm-3, thickness is 0.8 μm~2 μm.
Preferably, the back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer；The Cu2ZnSn(S,Se)4Carry on the back table
The band gap of face layer is more than the Cu2ZnSn(S,Se)4The band gap of absorbed layer, thickness are 50nm~500nm.
Preferably, the back surface field layer is non-crystalline silicon back surface field layer；The hole of the non-crystalline silicon back surface field layer is dense
Degree is more than the Cu2ZnSn(S,Se)4The hole concentration of absorbed layer, thickness are 5nm~50nm.
Preferably, the substrate is selected from glass substrate, polyimide substrate, molybdenum foil substrate or aluminum substrates.
Preferably, the back electrode is selected from Mo back electrodes or FTO back electrodes.
Preferably, the buffer layer is selected from CdS buffer layers or In2S3Buffer layer.
Preferably, the Window layer is by i-ZnO Window layers and ZnO:Al Window layers form.
Preferably, the preceding electrode is selected from Ni-Al or Al.
The utility model provides a kind of Cu2ZnSn(S,Se)4Thin-film solar cells, by substrate compound successively, back of the body electricity
Pole, back surface field layer, absorbed layer, buffer layer, Window layer and preceding electrode composition；The back surface field layer is Cu2ZnSn(S,Se)4
Back surface field layer or non-crystalline silicon back surface field layer；The absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer.Compared with prior art,
Cu provided by the utility model2ZnSn(S,Se)4Thin-film solar cells has back surface field layer, can extend Cu2ZnSn(S,
Se)4Cu is improved in the built in field distributed areas of thin-film solar cells2ZnSn(S,Se)4Thin-film solar cells it is total built-in
Potential forms photoproduction and lacks sub- potential barrier, is passivated Cu2ZnSn(S,Se)4Thin-film solar cells back surface, to what is made
Cu2ZnSn(S,Se)4Thin-film solar cells has good photovoltaic property.
Description of the drawings
Fig. 1 is Cu provided by the utility model2ZnSn(S,Se)4The structural schematic diagram of thin-film solar cells.
Specific implementation mode
Below in conjunction with the utility model embodiment, the technical solution of the utility model is clearly and completely described,
Obviously, the described embodiments are only a part of the embodiments of the utility model, instead of all the embodiments.Based on this practicality
Embodiment in novel, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
The utility model provides a kind of Cu2ZnSn(S,Se)4Thin-film solar cells, by substrate compound successively, back of the body electricity
Pole, back surface field layer, absorbed layer, buffer layer, Window layer and preceding electrode composition；
The back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer or non-crystalline silicon back surface field layer；
The absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer.
Referring to Fig. 1, Fig. 1 is Cu provided by the utility model2ZnSn(S,Se)4The structural representation of thin-film solar cells
Figure；Wherein, it is followed successively by substrate, back electrode, back surface field layer, absorbed layer, buffer layer, Window layer and preceding electrode, institute from bottom to top
Window layer to be stated to be made of compound successively first window layer and the second Window layer, the first window layer is compound on the buffer layer,
Second Window layer is compound on the front electrode.
In the present invention, the substrate is preferably selected from glass substrate, polyimide substrate, molybdenum foil substrate or aluminum foil lining
Bottom, more preferably glass substrate or aluminum substrates.The utility model is not particularly limited the source of the substrate, using ability
Above-mentioned glass substrate, polyimide substrate, molybdenum foil substrate and/or aluminum substrates known to field technique personnel.
In the present invention, the back electrode is preferably selected from Mo back electrodes or FTO back electrodes, more preferably Mo back of the body electricity
Pole.The utility model is not particularly limited the source of the back electrode, using magnetron sputtering well known to those skilled in the art
The Mo back electrodes and/or FTO back electrodes that method deposits on substrate.
In the present invention, the back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer or non-crystalline silicon back surface
Field layer.In the utility model preferred embodiment, the back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer；It is described
Cu2ZnSn(S,Se)4The band gap of back surface field layer is more than the Cu2ZnSn(S,Se)4The band gap of absorbed layer；Or the Cu2ZnSn
(S,Se)4The hole concentration of back surface field layer is more than the Cu2ZnSn(S,Se)4The hole concentration of absorbed layer.The utility model pair
The Cu2ZnSn(S,Se)4The source of back surface field layer is not particularly limited, and is splashed using magnetic control well known to those skilled in the art
Penetrate the Cu of method or vacuum vapor deposition method deposition2ZnSn(S,Se)4Back surface field layer.In the present invention, the Cu2ZnSn
(S,Se)4The thickness of back surface field layer is preferably 50nm~500nm, more preferably 200nm.
In the utility model preferred embodiment, the back surface field layer is non-crystalline silicon (α-Si) back surface field layer；Institute
The hole concentration for stating non-crystalline silicon back surface field layer is more than the Cu2ZnSn(S,Se)4The hole concentration of absorbed layer.The utility model
The source of the non-crystalline silicon back surface field layer is not particularly limited, using plasma enhancing well known to those skilled in the art
The non-crystalline silicon back surface field layer of chemical vapor deposition.In the present invention, the non-crystalline silicon back surface field layer
Thickness be preferably 5nm~50nm, more preferably 10nm.
In the present invention, the absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer；The Cu2ZnSn(S,Se)4It absorbs
The band gap of layer is preferably 1.0eV~1.5eV, more preferably 1.10eV~1.45eV；The Cu2ZnSn(S,Se)4The sky of absorbed layer
Cave concentration is preferably 1 × 1016cm-3~1 × 1019cm-3, more preferably 1 × 1016cm-3~1 × 1017cm-3；The Cu2ZnSn
(S,Se)4The thickness of absorbed layer is preferably 0.8 μm~2 μm, more preferably 1 μm.The utility model is to the Cu2ZnSn(S,Se)4
The source of absorbed layer is not particularly limited, and is deposited using magnetron sputtering method well known to those skilled in the art or vacuum vapor deposition method
Cu2ZnSn(S,Se)4Absorbed layer.
In the present invention, the buffer layer is preferably selected from CdS buffer layers or In2S3Buffer layer.The utility model is to institute
The source for stating buffer layer is not particularly limited, and the CdS being prepared using chemical bath method well known to those skilled in the art is slow
Rush layer and In2S3Buffer layer.In the present invention, the thickness of the buffer layer is preferably 40nm~60nm, more preferably
50nm。
In the present invention, the Window layer is preferably by i-ZnO Window layers and ZnO:Al Window layers form, and the two is mutually multiple
It closes；Wherein, the i-ZnO Window layers are first window layer, are compounded on the buffer layer；The ZnO:Al Window layers are second
Window layer, it is compound on the front electrode.The utility model is not particularly limited the source of the Window layer, using art technology
The i-ZnO Window layers and ZnO that magnetron sputtering method known to personnel deposits:Al Window layers.In the present invention, the i-
The thickness of ZnO Window layers is preferably 40nm~60nm, more preferably 50nm；The ZnO:The thickness of Al Window layers is preferably
180nm~220nm, more preferably 200nm.
In the present invention, the preceding electrode is preferably selected from before Ni-Al electrode, more preferably Ni-Al before electrode or Al
Preceding electrode.The utility model is not particularly limited the source of the preceding electrode, using vacuum well known to those skilled in the art
Electrode before electrode and Al before Ni-Al prepared by evaporation.
Cu provided by the utility model2ZnSn(S,Se)4Thin-film solar cells uses specific structure, each layer to interact,
Realize that preferable overall effect, product have good photovoltaic property.Also, increased specific back surface field layer, passes through setting
More than the band gap or hole concentration of absorbed layer, built in field is formed between back surface field layer and absorbed layer, the built in field side
To built in field distribution identical as the direction of solar cell original built in field, therefore can preferably extending solar cell
Region promotes the photo-generated carrier in rear surface of solar cell region to separate and collect, and forms photoproduction and lack sub- potential barrier, reduces reversed full
And electric current；And it is more than the back surface field layer of absorbed layer by using band gap, make Cu2ZnSn(S,Se)4Thin-film solar cells it is total
Solar cell of the Built-in potential more than no back surface field layer.In addition, increased specific back surface field layer has passivation too simultaneously
It is positive can cell backside effect, can reduce photo-generated carrier rear surface of solar cell recombination losses.
The utility model additionally provides the Cu described in a kind of above-mentioned technical proposal2ZnSn(S,Se)4Thin-film solar cells
Preparation method includes the following steps：
A) composite back electrode, back surface field layer, absorbed layer, buffer layer, Window layer and preceding electrode successively on substrate, obtain
Cu2ZnSn(S,Se)4Thin-film solar cells；
The back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer or non-crystalline silicon back surface field layer；
The absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer.
In the present invention, the substrate, back electrode, back surface field layer, absorbed layer, buffer layer, Window layer and preceding electricity
Pole is identical as described in above-mentioned technical proposal, and details are not described herein.
In the present invention, the Cu2ZnSn(S,Se)4The preparation method of thin-film solar cells is preferably specially：
A1 back electrode) is deposited using magnetron sputtering method on substrate；
A2 magnetron sputtering method or vacuum vapor deposition method) is used to deposit Cu2ZnSn(S,Se)4Back surface field layer；
A3 magnetron sputtering method or vacuum vapor deposition method) is used to deposit Cu2ZnSn(S,Se)4Absorbed layer；
A4 buffer layer) is prepared using chemical bath method；
A5 Window layer) is sequentially depositing using magnetron sputtering method；
A6 electrode before) vacuum vapor deposition method being used to prepare, obtains Cu2ZnSn(S,Se)4Thin-film solar cells.
Or
A1 back electrode) is deposited using magnetron sputtering method on substrate；
A2) using plasma enhances chemical vapor deposition non-crystalline silicon back surface field layer；
A3 magnetron sputtering method or vacuum vapor deposition method) is used to deposit Cu2ZnSn(S,Se)4Absorbed layer；
A4 buffer layer) is prepared using chemical bath method；
A5 Window layer) is sequentially depositing using magnetron sputtering method；
A6 electrode before) vacuum vapor deposition method being used to prepare, obtains Cu2ZnSn(S,Se)4Thin-film solar cells.
The utility model provides a kind of Cu2ZnSn(S,Se)4Thin-film solar cells, by substrate compound successively, back of the body electricity
Pole, back surface field layer, absorbed layer, buffer layer, Window layer and preceding electrode composition；The back surface field layer is Cu2ZnSn(S,Se)4
Back surface field layer or non-crystalline silicon back surface field layer；The absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer.Compared with prior art,
Cu provided by the utility model2ZnSn(S,Se)4Thin-film solar cells has back surface field layer, can extend Cu2ZnSn(S,
Se)4Cu is improved in the built in field distributed areas of thin-film solar cells2ZnSn(S,Se)4Thin-film solar cells it is total built-in
Potential forms photoproduction and lacks sub- potential barrier, is passivated Cu2ZnSn(S,Se)4Thin-film solar cells back surface, to what is made
Cu2ZnSn(S,Se)4Thin-film solar cells has good photovoltaic property.
In order to further illustrate the utility model, it is described in detail below by following embodiment.
Embodiment 1
The Cu that embodiment 1 provides2ZnSn(S,Se)4The structural schematic diagram of thin-film solar cells is shown in Figure 1.Wherein,
Substrate is glass substrate；Back electrode is Mo back electrodes；Back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer, band gap are
1.3eV, hole concentration are 1 × 1017cm-3, thickness 50nm；Absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer, band gap are
1.1eV, hole concentration are 1 × 1016cm-3, thickness is 2 μm；Buffer layer is CdS buffer layers, thickness 50nm；First window layer
For i-ZnO Window layers, thickness 50nm；Second Window layer is ZnO:Al Window layers, thickness 200nm；Before preceding electrode is Ni-Al
Electrode.
The Cu that embodiment 1 provides2ZnSn(S,Se)4Thin-film solar cells has back surface field layer, can extend
Cu2ZnSn(S,Se)4The built in field distributed areas of thin-film solar cells, by total Built-in potential of solar cell improve to
1.42eV forms photoproduction and lacks sub- potential barrier, is passivated Cu2ZnSn(S,Se)4Thin-film solar cells back surface is conducive to improve
Cu2ZnSn(S,Se)4The photovoltaic property of thin-film solar cells.
Embodiment 2
The Cu that embodiment 2 provides2ZnSn(S,Se)4The structural schematic diagram of thin-film solar cells is shown in Figure 1.Wherein,
Substrate is glass substrate；Back electrode is Mo back electrodes；Back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer, band gap are
1.4eV, hole concentration are 1 × 1018cm-3, thickness 100nm；Absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer, band gap are
1.1eV, hole concentration are 1 × 1016cm-3, thickness is 1.5 μm；Buffer layer is In2S3Buffer layer, thickness 50nm；First window
Layer is i-ZnO Window layers, thickness 50nm；Second Window layer is ZnO:Al Window layers, thickness 200nm；Preceding electrode is Ni-Al
Preceding electrode.
The Cu that embodiment 2 provides2ZnSn(S,Se)4Thin-film solar cells has back surface field layer, can extend
Cu2ZnSn(S,Se)4The built in field distributed areas of thin-film solar cells, by total Built-in potential of solar cell improve to
1.58eV forms photoproduction and lacks sub- potential barrier, is passivated Cu2ZnSn(S,Se)4Thin-film solar cells back surface is conducive to improve
Cu2ZnSn(S,Se)4The photovoltaic property of thin-film solar cells.
Embodiment 3
The Cu that embodiment 3 provides2ZnSn(S,Se)4The structural schematic diagram of thin-film solar cells is shown in Figure 1.Wherein,
Substrate is glass substrate；Back electrode is FTO back electrodes；Back surface field layer is non-crystalline silicon (α-Si) back surface field layer, hole concentration
It is 1 × 1020cm-3, thickness 10nm；Absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer, band gap 1.4eV, hole concentration be 1 ×
1017cm-3, thickness is 1 μm；Buffer layer is CdS buffer layers, thickness 50nm；First window layer is i-ZnO Window layers, and thickness is
50nm；Second Window layer is ZnO:Al Window layers, thickness 200nm；Preceding electrode is electrode before Ni-Al.
The Cu that embodiment 3 provides2ZnSn(S,Se)4Thin-film solar cells has back surface field layer, can extend
Cu2ZnSn(S,Se)4The built in field distributed areas of thin-film solar cells, by total Built-in potential of solar cell improve to
1.07eV forms photoproduction and lacks sub- potential barrier, is passivated Cu2ZnSn(S,Se)4Thin-film solar cells back surface is conducive to improve
Cu2ZnSn(S,Se)4The photovoltaic property of thin-film solar cells.
Embodiment 4
The Cu that embodiment 4 provides2ZnSn(S,Se)4The structural schematic diagram of thin-film solar cells is shown in Figure 1.Wherein,
Substrate is glass substrate；Back electrode is Mo back electrodes；Back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer, band gap are
1.5eV, hole concentration are 1 × 1018cm-3, thickness 200nm；Absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer, band gap are
1.1eV, hole concentration are 1 × 1016cm-3, thickness is 1 μm；Buffer layer is CdS buffer layers, thickness 50nm；First window layer
For i-ZnO Window layers, thickness 50nm；Second Window layer is ZnO:Al Window layers, thickness 200nm；Before preceding electrode is Ni-Al
Electrode.
The Cu that embodiment 4 provides2ZnSn(S,Se)4Thin-film solar cells has back surface field layer, can extend
Cu2ZnSn(S,Se)4The built in field distributed areas of thin-film solar cells, by total Built-in potential of solar cell improve to
1.68eV forms photoproduction and lacks sub- potential barrier, is passivated Cu2ZnSn(S,Se)4Thin-film solar cells back surface is conducive to improve
Cu2ZnSn(S,Se)4The photovoltaic property of thin-film solar cells.
Embodiment 5
The Cu that embodiment 5 provides2ZnSn(S,Se)4The structural schematic diagram of thin-film solar cells is shown in Figure 1.Wherein,
Substrate is aluminum substrates；Back electrode is Mo back electrodes；Back surface field layer is non-crystalline silicon (α-Si) back surface field layer, and hole concentration is
1×1020cm-3, thickness 50nm；Absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer, band gap 1.5eV, hole concentration be 1 ×
1016cm-3, thickness is 2 μm；Buffer layer is CdS buffer layers, thickness 50nm；First window layer is i-ZnO Window layers, and thickness is
50nm；Second Window layer is ZnO:Al Window layers, thickness 200nm；Preceding electrode is electrode before Ni-Al.
The Cu that embodiment 5 provides2ZnSn(S,Se)4Thin-film solar cells has back surface field layer, can extend
Cu2ZnSn(S,Se)4The built in field distributed areas of thin-film solar cells, by total Built-in potential of solar cell improve to
1.07eV forms photoproduction and lacks sub- potential barrier, is passivated Cu2ZnSn(S,Se)4Thin-film solar cells back surface is conducive to improve
Cu2ZnSn(S,Se)4The photovoltaic property of thin-film solar cells.
The above description of the disclosed embodiments enables professional and technical personnel in the field to realize or use this practicality new
Type.Various modifications to these embodiments will be apparent to those skilled in the art, and determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The widest range consistent with features of novelty.
Claims (8)
1. a kind of Cu2ZnSn(S,Se)4Thin-film solar cells by substrate compound successively, back electrode, back surface field layer, absorbs
Layer, buffer layer, Window layer and preceding electrode composition；
The back surface field layer is Cu2ZnSn(S,Se)4Back surface field layer or non-crystalline silicon back surface field layer；
The absorbed layer is Cu2ZnSn(S,Se)4Absorbed layer.
2. Cu according to claim 12ZnSn(S,Se)4Thin-film solar cells, which is characterized in that the back surface field
Layer is Cu2ZnSn(S,Se)4Back surface field layer；The Cu2ZnSn(S,Se)4The band gap of back surface field layer is more than the Cu2ZnSn
(S,Se)4The band gap of absorbed layer, thickness are 50nm~500nm.
3. Cu according to claim 12ZnSn(S,Se)4Thin-film solar cells, which is characterized in that the back surface field
Layer is non-crystalline silicon back surface field layer；The hole concentration of the non-crystalline silicon back surface field layer is more than the Cu2ZnSn(S,Se)4It absorbs
The hole concentration of layer, thickness are 5nm~50nm.
4. Cu according to claim 12ZnSn(S,Se)4Thin-film solar cells, which is characterized in that the substrate is selected from
Glass substrate, polyimide substrate, molybdenum foil substrate or aluminum substrates.
5. Cu according to claim 12ZnSn(S,Se)4Thin-film solar cells, which is characterized in that the back electrode choosing
From Mo back electrodes or FTO back electrodes.
6. Cu according to claim 12ZnSn(S,Se)4Thin-film solar cells, which is characterized in that the buffering layer choosing
From CdS buffer layers or In2S3Buffer layer.
7. Cu according to claim 12ZnSn(S,Se)4Thin-film solar cells, which is characterized in that the Window layer by
I-ZnO Window layers and ZnO:Al Window layers form.
8. Cu according to claim 12ZnSn(S,Se)4Thin-film solar cells, which is characterized in that the preceding electrode choosing
The electrode before electrode or Al from before Ni-Al.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039388A (en) * | 2018-01-08 | 2018-05-15 | 广东工业大学 | A kind of Cu2ZnSn(S,Se)4Thin-film solar cells and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039388A (en) * | 2018-01-08 | 2018-05-15 | 广东工业大学 | A kind of Cu2ZnSn(S,Se)4Thin-film solar cells and preparation method thereof |
| CN108039388B (en) * | 2018-01-08 | 2024-03-26 | 广东工业大学 | Cu (copper) alloy 2 ZnSn(S,Se) 4 Thin film solar cell and preparation method thereof |
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