CN104600146A - Double-sided thin-film solar cell - Google Patents
Double-sided thin-film solar cell Download PDFInfo
- Publication number
- CN104600146A CN104600146A CN201410802469.7A CN201410802469A CN104600146A CN 104600146 A CN104600146 A CN 104600146A CN 201410802469 A CN201410802469 A CN 201410802469A CN 104600146 A CN104600146 A CN 104600146A
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- Prior art keywords
- solar cell
- film solar
- thin
- layer
- prepared
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- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 21
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 21
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 229910052711 selenium Inorganic materials 0.000 claims description 8
- 239000011669 selenium Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- WZGKIRHYWDCEKP-UHFFFAOYSA-N cadmium magnesium Chemical compound [Mg].[Cd] WZGKIRHYWDCEKP-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 abstract 3
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 abstract 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a double-sided thin-film solar cell. A tellurium magnesium cadmium thin-film solar cell with a wide band gap is prepared on one surface of a transparent substrate of the double-sided thin-film solar cell, a copper indium gallium selenium thin-film solar cell with a narrow band gap is prepared on the other surface of the transparent substrate, the tellurium magnesium cadmium thin-film solar cell comprises a p-type tellurium magnesium cadmium absorption layer and an n-type cadmium sulfide buffer layer, and the copper indium gallium selenium thin-film solar cell comprises a p-type copper indium gallium selenium absorption layer and an n-type cadmium sulfide buffer layer. Two materials with different band gaps are prepared on the two surfaces of the transparent substrate, so that the solar spectrum absorption range is widened, the use ratio of solar radiation energy is increased, and the shortcomings such as lattice mismatch and difficulty in matching photo-generated current of a stacked solar cell are overcome. A tunnel junction is omitted, the two sub cells are prepared on the two surfaces of the transparent substrate respectively, the technical process can be simplified, and the production cost of the solar cell is reduced.
Description
Technical field
The present invention relates to two-side film membrane solar cell, specifically refer to tellurium magnesium cadmium and Copper Indium Gallium Selenide double-sided solar battery.
Background technology
The promotion and application of solar cell will consider its conversion efficiency and production cost factor, and current solar cell circle is just seeking new material and battery structure to improve conversion efficiency and to reduce costs.
On solar cell market, main flow is crystal silicon solar energy battery and thin-film solar cells, and both each tools are good and bad, crystal silicon solar energy battery technical maturity, and photoelectric conversion efficiency is relatively high, but material consumption and battery cost very high; Thin-film solar cells is prepared on cheap substrate, material consumption and battery cost very low, but electricity conversion need to improve.
In order to utilize solar radiant energy to a greater extent, production cost is reduced while improving conversion efficiency of solar cell, overlapping thin film solar battery can be prepared in inexpensive substrate, namely on substrate, end battery is first prepared, on end battery, after depositing tunnel knot, battery is pushed up in preparation again, sunlight first enter broad-band gap sub-battery and by the high energy solar radiant energy of the relative short wavelength of selective absorbing, enter after transparent substrates narrow band gap sub-battery and by the low energy solar radiant energy of the relative long wavelength of selective absorbing, the people such as Coutts think that top battery and the best energy gap of end battery are respectively 1.6 ~ 1.8eV and 1.0 ~ 1.1eV.But lattice and the more difficult coupling of photogenerated current between lamination solar cell two sub-batteries, and need to prepare tunnel junction, may stability problem be there is.
Sub-batteries different for two energy gaps is prepared in the two sides of transparent substrates by double-sided solar battery, allow the light of short wavelength be absorbed by the sub-battery of narrow band gap by the light of the sub-battery absorption of broad-band gap, long wavelength, its effect is the photoelectric conversion efficiency that improve low cost thin-film solar cells equally.
Tellurium magnesium cadmium (Cd
1-xmg
xte) be ternary semiconductor material, the lattice constant mismatch of MgTe and CdTe is low to moderate 0.7%, and compatibility is good, along with component x changes from 1.45eV to 3.5eV from the energy gap of 0 to 1 change tellurium magnesium cadmium, and the Cd as x=0.08
0.92mg
0.08the energy gap of Te is close to 1.6eV.
Copper Indium Gallium Selenide (CuIn
1-xga
xse
2) be quaternary compound semiconductor material, along with component x changes from 1.04eV to 1.69eV from 0 to 1 its energy gap of change, the CuIn as x=0.13
0.87ga
0.13se
2energy gap close to 1.1eV.Copper Indium Gallium Selenide is direct gap semiconductor material, and the absorption coefficient of its visible light wave range is up to 105cm
-1the order of magnitude, copper-indium-galliun-selenium film solar cell capability of resistance to radiation is strong, and good stability, there will not be photo attenuation and S-W effect, and low light level characteristic might as well.
Summary of the invention
The present invention proposes a kind of transparent substrates two sides in cheapness and prepares tellurium magnesium cadmium and copper-indium-galliun-selenium film solar cell respectively, forms a kind of tellurium magnesium cadmium/Copper Indium Gallium Selenide double-sided solar battery.
Double-sided solar battery of the present invention comprises: transparent substrates, transparent substrates sensitive surface is prepared the tellurium magnesium cadmium holder battery of selective absorbing short wavelength high-energy solar radiant energy, prepares the Copper Indium Gallium Selenide bottom battery of the low-yield solar radiant energy of selective absorbing long wavelength at transparent substrates shady face.
Described tellurium magnesium cadmium holder battery, is made up of the first transparency conducting layer deposited successively on cheap transparent substrates sensitive surface, p-type tellurium magnesium Cd uptake layer, N-shaped cadmium sulfide resilient coating and electrically conducting transparent Window layer.
Described Copper Indium Gallium Selenide bottom battery, is made up of the N-shaped cadmium sulfide resilient coating deposited successively on cheap transparent substrates shady face, p-type CuInGaSe absorbed layer, the second transparency conducting layer and Ag reflector.
Described transparent substrates is any one in rigid transparent glass, flexible transparent polyimide, flexible transparent plastic.
Described first transparency conducting layer and described second transparency conducting layer are the one in ITO, AZO, FTO.
The present invention is prepared in the two sides of transparent substrates by the material of two kinds of different energy gaps, not only expand the absorption region to solar spectrum, improve the utilance to solar radiant energy, also solve the shortcoming of lamination solar cell, as lattice mismatch and photogenerated current not easily mate.The present invention does not adopt tunnel junction, but two sub-batteries are prepared in the two sides of transparent substrates respectively, is conducive to simplification of flowsheet, reduces the production cost of solar cell.
Below in conjunction with accompanying drawing, the invention will be further described.
Accompanying drawing explanation
Fig. 1 is tellurium magnesium cadmium of the present invention/Copper Indium Gallium Selenide double-sided solar battery structural representation.
Description of reference numerals: 1-transparent substrates, 2-first transparency conducting layer, 3-p type tellurium magnesium Cd uptake layer, 4-n type cadmium sulfide resilient coating, 5-electrically conducting transparent Window layer, 6-n type cadmium sulfide resilient coating, 7-p type CuInGaSe absorbed layer, 8-second transparency conducting layer, 9-Ag reflector.
Embodiment
Below in conjunction with embodiment, to above-mentioned being described in more detail with other technical characteristic and advantage of the present invention.
At the first transparency conducting layer 2 that a magnetron sputtering deposition thickness of transparent substrates 1 is 500nm, wherein transparent substrates 1 is any one in rigid transparent glass, flexible transparent polyimide, flexible transparent plastic, and the first transparency conducting layer 2 is the one in ITO, AZO, FTO.
On the first transparency conducting layer 2, coevaporation Mg and CdTe forms the p-type tellurium magnesium Cd uptake layer 3 of about 1500nm, and underlayer temperature is 300 ~ 400 DEG C.
P-type tellurium magnesium Cd uptake layer 3 adopt chemical bath method deposit thickness be the N-shaped cadmium sulfide resilient coating 4 of 100nm.
The substrate depositing the first transparency conducting layer 2, p-type tellurium magnesium Cd uptake layer 3 and N-shaped cadmium sulfide resilient coating 4 is placed on temperature is 380 ~ 400 DEG C, pressure is 10mbar is connected with CdCl
2the Ar/O of gas
2anneal in environment, form tellurium magnesium cadmium/cadmium sulfide heterojunction.
On N-shaped cadmium sulfide resilient coating 4, deposit thickness is the electrically conducting transparent Window layer 5 of 50 ~ 100nm.
At the N-shaped cadmium sulfide resilient coating 6 that the another side employing chemical bath method deposit thickness of transparent substrates 1 is 100nm.
N-shaped cadmium sulfide resilient coating 6 adopt polynary coevaporation method growth thickness be the p-type CuInGaSe absorbed layer 7 of 1000 ~ 2000nm, namely make evaporation source with Cu, In, Ga, Se, the element deposition evaporated during evaporation reacts formation CIGS thin-film on the heated substrate.During coevaporation, simultaneously the first step evaporates In, Ga and Se on substrate underlayer temperature about 350 DEG C, formed (InGa)
2se
3compound; Second step is underlayer temperature about 550 DEG C, evaporates the CIGS thin-film that Cu and Se forms micro-rich Cu simultaneously; 3rd step is underlayer temperature about 550 DEG C, evaporates In, Ga and Se simultaneously, forms the CIGS thin-film surface of rich III race's element.
On p-type CuInGaSe absorbed layer 7, deposit thickness is second transparency conducting layer 8 of 50 ~ 100nm.
The Ag reflector 9 of thermal evaporation 100 ~ 300nm on the second transparency conducting layer 8, forms tellurium magnesium cadmium/Copper Indium Gallium Selenide double-sided solar battery.
Above-described embodiment is only be described the preferred embodiment of the present invention; not scope of the present invention is limited; under not departing from the present invention and designing the prerequisite of spirit; the various distortion that those of ordinary skill in the art make technical scheme of the present invention and improvement, all should fall in protection range that claims of the present invention determines.
Claims (5)
1. a two-side film membrane solar cell, it is characterized in that: described double-sided solar battery comprises a transparent substrates, described transparent substrates one side is provided with the tellurium magnesium vestalium thin-film solar cell of broad-band gap, and another side is provided with the copper-indium-galliun-selenium film solar cell of narrow band gap.
2. two-side film membrane solar cell according to claim 1, is characterized in that: described tellurium magnesium vestalium thin-film solar cell comprises the first transparency conducting layer, tellurium magnesium Cd uptake layer, cadmium sulfide resilient coating and the electrically conducting transparent Window layer that set gradually from inside to outside.
3. two-side film membrane solar cell according to claim 1, is characterized in that: described copper-indium-galliun-selenium film solar cell comprise set gradually from inside to outside cadmium sulfide resilient coating, CuInGaSe absorbed layer, the second transparency conducting layer and Ag reflector.
4. two-side film membrane solar cell according to claim 1, is characterized in that: described transparent substrates is any one in rigid transparent glass, flexible transparent polyimide and flexible transparent plastic.
5. two-side film membrane solar cell according to claim 1, is characterized in that: described first transparency conducting layer and described second transparency conducting layer are the one in ITO, AZO, FTO.
Priority Applications (1)
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CN201410802469.7A CN104600146A (en) | 2014-12-23 | 2014-12-23 | Double-sided thin-film solar cell |
Applications Claiming Priority (1)
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---|---|---|---|
CN201410802469.7A CN104600146A (en) | 2014-12-23 | 2014-12-23 | Double-sided thin-film solar cell |
Publications (1)
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CN104600146A true CN104600146A (en) | 2015-05-06 |
Family
ID=53125789
Family Applications (1)
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CN201410802469.7A Pending CN104600146A (en) | 2014-12-23 | 2014-12-23 | Double-sided thin-film solar cell |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112038439A (en) * | 2020-09-11 | 2020-12-04 | 福州大学 | CZTSSe flexible double-sided solar cell and preparation method thereof |
CN113410323A (en) * | 2021-04-27 | 2021-09-17 | 中国节能减排有限公司 | Flexible double-sided solar cell module and preparation method thereof |
CN113921658A (en) * | 2021-10-20 | 2022-01-11 | 晶澳(扬州)太阳能科技有限公司 | Preparation method of solar cell and solar cell |
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2014
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112038439A (en) * | 2020-09-11 | 2020-12-04 | 福州大学 | CZTSSe flexible double-sided solar cell and preparation method thereof |
CN113410323A (en) * | 2021-04-27 | 2021-09-17 | 中国节能减排有限公司 | Flexible double-sided solar cell module and preparation method thereof |
CN113921658A (en) * | 2021-10-20 | 2022-01-11 | 晶澳(扬州)太阳能科技有限公司 | Preparation method of solar cell and solar cell |
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Application publication date: 20150506 |