CN104600146A - Double-sided thin-film solar cell - Google Patents

Double-sided thin-film solar cell Download PDF

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Publication number
CN104600146A
CN104600146A CN201410802469.7A CN201410802469A CN104600146A CN 104600146 A CN104600146 A CN 104600146A CN 201410802469 A CN201410802469 A CN 201410802469A CN 104600146 A CN104600146 A CN 104600146A
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solar cell
film solar
thin
layer
prepared
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CN201410802469.7A
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Chinese (zh)
Inventor
肖友鹏
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Jiangxi University of Technology
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Jiangxi University of Technology
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Priority to CN201410802469.7A priority Critical patent/CN104600146A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725Multiple junction or tandem solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a double-sided thin-film solar cell. A tellurium magnesium cadmium thin-film solar cell with a wide band gap is prepared on one surface of a transparent substrate of the double-sided thin-film solar cell, a copper indium gallium selenium thin-film solar cell with a narrow band gap is prepared on the other surface of the transparent substrate, the tellurium magnesium cadmium thin-film solar cell comprises a p-type tellurium magnesium cadmium absorption layer and an n-type cadmium sulfide buffer layer, and the copper indium gallium selenium thin-film solar cell comprises a p-type copper indium gallium selenium absorption layer and an n-type cadmium sulfide buffer layer. Two materials with different band gaps are prepared on the two surfaces of the transparent substrate, so that the solar spectrum absorption range is widened, the use ratio of solar radiation energy is increased, and the shortcomings such as lattice mismatch and difficulty in matching photo-generated current of a stacked solar cell are overcome. A tunnel junction is omitted, the two sub cells are prepared on the two surfaces of the transparent substrate respectively, the technical process can be simplified, and the production cost of the solar cell is reduced.

Description

A kind of two-side film membrane solar cell
Technical field
The present invention relates to two-side film membrane solar cell, specifically refer to tellurium magnesium cadmium and Copper Indium Gallium Selenide double-sided solar battery.
Background technology
The promotion and application of solar cell will consider its conversion efficiency and production cost factor, and current solar cell circle is just seeking new material and battery structure to improve conversion efficiency and to reduce costs.
On solar cell market, main flow is crystal silicon solar energy battery and thin-film solar cells, and both each tools are good and bad, crystal silicon solar energy battery technical maturity, and photoelectric conversion efficiency is relatively high, but material consumption and battery cost very high; Thin-film solar cells is prepared on cheap substrate, material consumption and battery cost very low, but electricity conversion need to improve.
In order to utilize solar radiant energy to a greater extent, production cost is reduced while improving conversion efficiency of solar cell, overlapping thin film solar battery can be prepared in inexpensive substrate, namely on substrate, end battery is first prepared, on end battery, after depositing tunnel knot, battery is pushed up in preparation again, sunlight first enter broad-band gap sub-battery and by the high energy solar radiant energy of the relative short wavelength of selective absorbing, enter after transparent substrates narrow band gap sub-battery and by the low energy solar radiant energy of the relative long wavelength of selective absorbing, the people such as Coutts think that top battery and the best energy gap of end battery are respectively 1.6 ~ 1.8eV and 1.0 ~ 1.1eV.But lattice and the more difficult coupling of photogenerated current between lamination solar cell two sub-batteries, and need to prepare tunnel junction, may stability problem be there is.
Sub-batteries different for two energy gaps is prepared in the two sides of transparent substrates by double-sided solar battery, allow the light of short wavelength be absorbed by the sub-battery of narrow band gap by the light of the sub-battery absorption of broad-band gap, long wavelength, its effect is the photoelectric conversion efficiency that improve low cost thin-film solar cells equally.
Tellurium magnesium cadmium (Cd 1-xmg xte) be ternary semiconductor material, the lattice constant mismatch of MgTe and CdTe is low to moderate 0.7%, and compatibility is good, along with component x changes from 1.45eV to 3.5eV from the energy gap of 0 to 1 change tellurium magnesium cadmium, and the Cd as x=0.08 0.92mg 0.08the energy gap of Te is close to 1.6eV.
Copper Indium Gallium Selenide (CuIn 1-xga xse 2) be quaternary compound semiconductor material, along with component x changes from 1.04eV to 1.69eV from 0 to 1 its energy gap of change, the CuIn as x=0.13 0.87ga 0.13se 2energy gap close to 1.1eV.Copper Indium Gallium Selenide is direct gap semiconductor material, and the absorption coefficient of its visible light wave range is up to 105cm -1the order of magnitude, copper-indium-galliun-selenium film solar cell capability of resistance to radiation is strong, and good stability, there will not be photo attenuation and S-W effect, and low light level characteristic might as well.
Summary of the invention
The present invention proposes a kind of transparent substrates two sides in cheapness and prepares tellurium magnesium cadmium and copper-indium-galliun-selenium film solar cell respectively, forms a kind of tellurium magnesium cadmium/Copper Indium Gallium Selenide double-sided solar battery.
Double-sided solar battery of the present invention comprises: transparent substrates, transparent substrates sensitive surface is prepared the tellurium magnesium cadmium holder battery of selective absorbing short wavelength high-energy solar radiant energy, prepares the Copper Indium Gallium Selenide bottom battery of the low-yield solar radiant energy of selective absorbing long wavelength at transparent substrates shady face.
Described tellurium magnesium cadmium holder battery, is made up of the first transparency conducting layer deposited successively on cheap transparent substrates sensitive surface, p-type tellurium magnesium Cd uptake layer, N-shaped cadmium sulfide resilient coating and electrically conducting transparent Window layer.
Described Copper Indium Gallium Selenide bottom battery, is made up of the N-shaped cadmium sulfide resilient coating deposited successively on cheap transparent substrates shady face, p-type CuInGaSe absorbed layer, the second transparency conducting layer and Ag reflector.
Described transparent substrates is any one in rigid transparent glass, flexible transparent polyimide, flexible transparent plastic.
Described first transparency conducting layer and described second transparency conducting layer are the one in ITO, AZO, FTO.
The present invention is prepared in the two sides of transparent substrates by the material of two kinds of different energy gaps, not only expand the absorption region to solar spectrum, improve the utilance to solar radiant energy, also solve the shortcoming of lamination solar cell, as lattice mismatch and photogenerated current not easily mate.The present invention does not adopt tunnel junction, but two sub-batteries are prepared in the two sides of transparent substrates respectively, is conducive to simplification of flowsheet, reduces the production cost of solar cell.
Below in conjunction with accompanying drawing, the invention will be further described.
Accompanying drawing explanation
Fig. 1 is tellurium magnesium cadmium of the present invention/Copper Indium Gallium Selenide double-sided solar battery structural representation.
Description of reference numerals: 1-transparent substrates, 2-first transparency conducting layer, 3-p type tellurium magnesium Cd uptake layer, 4-n type cadmium sulfide resilient coating, 5-electrically conducting transparent Window layer, 6-n type cadmium sulfide resilient coating, 7-p type CuInGaSe absorbed layer, 8-second transparency conducting layer, 9-Ag reflector.
Embodiment
Below in conjunction with embodiment, to above-mentioned being described in more detail with other technical characteristic and advantage of the present invention.
At the first transparency conducting layer 2 that a magnetron sputtering deposition thickness of transparent substrates 1 is 500nm, wherein transparent substrates 1 is any one in rigid transparent glass, flexible transparent polyimide, flexible transparent plastic, and the first transparency conducting layer 2 is the one in ITO, AZO, FTO.
On the first transparency conducting layer 2, coevaporation Mg and CdTe forms the p-type tellurium magnesium Cd uptake layer 3 of about 1500nm, and underlayer temperature is 300 ~ 400 DEG C.
P-type tellurium magnesium Cd uptake layer 3 adopt chemical bath method deposit thickness be the N-shaped cadmium sulfide resilient coating 4 of 100nm.
The substrate depositing the first transparency conducting layer 2, p-type tellurium magnesium Cd uptake layer 3 and N-shaped cadmium sulfide resilient coating 4 is placed on temperature is 380 ~ 400 DEG C, pressure is 10mbar is connected with CdCl 2the Ar/O of gas 2anneal in environment, form tellurium magnesium cadmium/cadmium sulfide heterojunction.
On N-shaped cadmium sulfide resilient coating 4, deposit thickness is the electrically conducting transparent Window layer 5 of 50 ~ 100nm.
At the N-shaped cadmium sulfide resilient coating 6 that the another side employing chemical bath method deposit thickness of transparent substrates 1 is 100nm.
N-shaped cadmium sulfide resilient coating 6 adopt polynary coevaporation method growth thickness be the p-type CuInGaSe absorbed layer 7 of 1000 ~ 2000nm, namely make evaporation source with Cu, In, Ga, Se, the element deposition evaporated during evaporation reacts formation CIGS thin-film on the heated substrate.During coevaporation, simultaneously the first step evaporates In, Ga and Se on substrate underlayer temperature about 350 DEG C, formed (InGa) 2se 3compound; Second step is underlayer temperature about 550 DEG C, evaporates the CIGS thin-film that Cu and Se forms micro-rich Cu simultaneously; 3rd step is underlayer temperature about 550 DEG C, evaporates In, Ga and Se simultaneously, forms the CIGS thin-film surface of rich III race's element.
On p-type CuInGaSe absorbed layer 7, deposit thickness is second transparency conducting layer 8 of 50 ~ 100nm.
The Ag reflector 9 of thermal evaporation 100 ~ 300nm on the second transparency conducting layer 8, forms tellurium magnesium cadmium/Copper Indium Gallium Selenide double-sided solar battery.
Above-described embodiment is only be described the preferred embodiment of the present invention; not scope of the present invention is limited; under not departing from the present invention and designing the prerequisite of spirit; the various distortion that those of ordinary skill in the art make technical scheme of the present invention and improvement, all should fall in protection range that claims of the present invention determines.

Claims (5)

1. a two-side film membrane solar cell, it is characterized in that: described double-sided solar battery comprises a transparent substrates, described transparent substrates one side is provided with the tellurium magnesium vestalium thin-film solar cell of broad-band gap, and another side is provided with the copper-indium-galliun-selenium film solar cell of narrow band gap.
2. two-side film membrane solar cell according to claim 1, is characterized in that: described tellurium magnesium vestalium thin-film solar cell comprises the first transparency conducting layer, tellurium magnesium Cd uptake layer, cadmium sulfide resilient coating and the electrically conducting transparent Window layer that set gradually from inside to outside.
3. two-side film membrane solar cell according to claim 1, is characterized in that: described copper-indium-galliun-selenium film solar cell comprise set gradually from inside to outside cadmium sulfide resilient coating, CuInGaSe absorbed layer, the second transparency conducting layer and Ag reflector.
4. two-side film membrane solar cell according to claim 1, is characterized in that: described transparent substrates is any one in rigid transparent glass, flexible transparent polyimide and flexible transparent plastic.
5. two-side film membrane solar cell according to claim 1, is characterized in that: described first transparency conducting layer and described second transparency conducting layer are the one in ITO, AZO, FTO.
CN201410802469.7A 2014-12-23 2014-12-23 Double-sided thin-film solar cell Pending CN104600146A (en)

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Application Number Priority Date Filing Date Title
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112038439A (en) * 2020-09-11 2020-12-04 福州大学 CZTSSe flexible double-sided solar cell and preparation method thereof
CN113410323A (en) * 2021-04-27 2021-09-17 中国节能减排有限公司 Flexible double-sided solar cell module and preparation method thereof
CN113921658A (en) * 2021-10-20 2022-01-11 晶澳(扬州)太阳能科技有限公司 Preparation method of solar cell and solar cell

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112038439A (en) * 2020-09-11 2020-12-04 福州大学 CZTSSe flexible double-sided solar cell and preparation method thereof
CN113410323A (en) * 2021-04-27 2021-09-17 中国节能减排有限公司 Flexible double-sided solar cell module and preparation method thereof
CN113921658A (en) * 2021-10-20 2022-01-11 晶澳(扬州)太阳能科技有限公司 Preparation method of solar cell and solar cell

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Application publication date: 20150506