CN111697085A - Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof - Google Patents

Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof Download PDF

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CN111697085A
CN111697085A CN202010451054.5A CN202010451054A CN111697085A CN 111697085 A CN111697085 A CN 111697085A CN 202010451054 A CN202010451054 A CN 202010451054A CN 111697085 A CN111697085 A CN 111697085A
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transparent conductive
layer
solar cell
nto
double
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彭寿
王伟
魏晓俊
周文彩
齐帅
于浩
曾红杰
李一哲
张纲
张正
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China Triumph International Engineering Co Ltd
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Priority to PCT/CN2020/136395 priority patent/WO2021238175A1/en
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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract

The invention provides a double-sided light-transmitting cadmium telluride solar cell and a preparation method thereof, wherein double-sided light transmission of the CdTe solar cell can be realized through FTO transparent conductive glass and an NTO transparent conductive layer, so that the light energy utilization rate, the photoelectric conversion rate and the generated energy of the CdTe solar cell can be improved; furthermore, after fluorine in the FTO transparent conductive layer replaces part of oxygen in tin oxide, an n-type semiconductor can be formed, and after nitrogen in the NTO transparent conductive layer replaces part of oxygen in tin oxide, a p-type semiconductor can be formed, so that through doping of tin oxide, the corresponding carrier concentration can be increased, and the conductivity of tin oxide can be improved; the NTO transparent conductive layer is prepared by a magnetron sputtering method, the method is simple, and the method can be realized by simply modifying the existing equipment for producing the metal electrode, so that the method has stronger applicability.

Description

Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof
Technical Field
The invention relates to a cadmium telluride solar cell, in particular to a double-sided light-transmitting cadmium telluride solar cell and a preparation method thereof.
Background
Cadmium telluride (CdTe) solar cells have the advantages of convenience in manufacturing, light weight, low manufacturing cost, excellent photoelectric performance and the like, are widely concerned by scientific research institutions and enterprises, and CdTe solar cells in many countries are beginning to be subjected to large-scale industrial production from the laboratory research stage. The theoretical photoelectric conversion efficiency of the CdTe solar cell is as high as 28%, and the highest photoelectric conversion efficiency of the CdTe solar cell known at present is 22%, so that the CdTe solar cell still has wide development space.
A CdTe solar cell, which is a heterojunction based on p-type cadmium telluride (CdTe) and n-type cadmium sulfide (CdS). A typical CdTe solar cell includes: the light-transmitting support substrate mainly plays a role of supporting, preventing pollution and incident sunlight on the CdTe solar cell; the transparent conductive oxide layer mainly plays a role in light transmission and electric conduction; a CdS window layer providing n-type semiconductor to form p-n junction with p-type CdTe; the CdTe absorption layer is used as a main light absorption layer and forms a p-n junction with the n-type CdS window layer; and a back electrode for drawing current. In CdTe solar cells, light passes through a light-transmissive support substrate (e.g., glass) and a series of film layers, and then reaches the CdTe absorber layer, where it is absorbed and converted into electrical energy.
Currently, the back electrode in CdTe solar cells is mostly molybdenum (Mo) metal back electrode, and the thickness of the Mo metal back electrode is usually above micron level, so the existing Mo metal back electrode is an opaque material layer, and the CdTe absorbing layer in the CdTe solar cell cannot absorb sunlight from the back, which reduces the light energy utilization rate, photoelectric conversion rate and power generation amount of the CdTe solar cell, especially in areas with strong reflection, such as desert, gobi, and the like.
Therefore, it is necessary to develop a double-sided transparent cadmium telluride solar cell and a preparation method thereof to improve the light energy utilization rate, the photoelectric conversion rate and the power generation amount of the cadmium telluride solar cell.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a double-sided light-transmitting cadmium telluride solar cell and a manufacturing method thereof, which are used to solve the problems that the cadmium telluride solar cell in the prior art can only transmit light on a single side, and the light energy utilization rate, the photoelectric conversion rate and the power generation amount of the cadmium telluride solar cell are low.
To achieve the above and other related objects, the present invention provides a double-sided light-transmissive cadmium telluride solar cell comprising:
FTO transparent conductive glass;
the CdS window layer is positioned on the surface of the FTO transparent conductive glass;
a CdTe absorption layer located on a surface of the CdS window layer;
the NTO transparent conducting layer is positioned on the surface of the CdTe absorption layer;
and the glass cover plate is positioned on the surface of the NTO transparent conducting layer.
Optionally, the FTO transparent conductive glass comprises a float glass and an FTO transparent conductive layer plated on a surface of the float glass, the FTO transparent conductive layer is a thin film of fluorine-doped tin oxide, and fluorine replaces part of oxygen in the tin oxide to form an n-type semiconductor; the NTO transparent conducting layer is a film of nitrogen-doped tin oxide, and nitrogen elements replace part of oxygen elements in the tin oxide to form a p-type semiconductor.
Optionally, the FTO transparent conductive layer in the FTO transparent conductive glass is a crystal film layer of a tetragonal rutile structure; the NTO transparent conductive layer is a crystal film layer with a tetragonal rutile structure.
Optionally, the thickness range of the FTO transparent conductive glass includes 0.5mm to 10 mm; the thickness range of the CdS window layer comprises 50 nm-300 nm; the thickness range of the CdTe absorption layer comprises 1-5 mu m; the thickness range of the NTO transparent conducting layer comprises 50 nm-500 nm; the thickness range of the glass cover plate comprises 0.5 mm-10 mm.
The invention also provides a preparation method of the double-sided light-transmitting cadmium telluride solar cell, which comprises the following steps:
providing FTO transparent conductive glass;
forming a CdS window layer on the surface of the FTO transparent conductive glass;
forming a CdTe absorption layer on the surface of the CdS window layer;
forming an NTO transparent conductive layer on the surface of the CdTe absorption layer by a magnetron sputtering method;
and encapsulating a glass cover plate on the surface of the NTO transparent conducting layer.
Optionally, the target material used in the magnetron sputtering method includes a tin oxide ceramic target or a tin metal target.
Optionally, the atmosphere used in the magnetron sputtering method includes one of nitrogen, a mixed gas of nitrogen and argon, a mixed gas of nitrogen and oxygen, or a mixed gas of nitrogen, argon and oxygen.
Optionally, the temperature range adopted by the magnetron sputtering method includes 200 ℃ to 700 ℃.
Optionally, the magnetron sputtering method employs a radio frequency power supply.
Optionally, the FTO transparent conductive layer in the FTO transparent conductive glass is a crystal film layer of a tetragonal rutile structure; the formed NTO transparent conductive layer is a crystal film layer with a tetragonal rutile structure; the thickness range of the FTO transparent conductive glass comprises 0.5 mm-10 mm; the thickness range of the formed CdS window layer comprises 50 nm-300 nm; the thickness range of the formed CdTe absorption layer comprises 1-5 μm; the thickness range of the formed NTO transparent conductive layer comprises 50 nm-500 nm; the thickness range of the formed glass cover plate comprises 0.5 mm-10 mm.
As described above, according to the double-sided light-transmitting cadmium telluride solar cell and the preparation method thereof, double-sided light transmission of the CdTe solar cell can be realized through the FTO transparent conductive glass and the NTO transparent conductive layer, so that the light energy utilization rate, the photoelectric conversion rate and the power generation amount of the CdTe solar cell can be improved; furthermore, after the fluorine element in the FTO transparent conductive layer replaces the oxygen element in the tin oxide, electrons can be provided to form an n-type semiconductor, and after the nitrogen element in the NTO transparent conductive layer replaces the oxygen element in the tin oxide, holes can be provided to form a p-type semiconductor, so that the tin oxide can be doped to increase the corresponding carrier concentration, and further the conductivity of the tin oxide can be improved; the NTO transparent conductive layer is prepared by a magnetron sputtering method, the method is simple, and the method can be realized by simply modifying the existing equipment for producing the metal electrode, so that the method has stronger applicability.
Drawings
FIG. 1 is a schematic structural view of a double-sided light-transmissive cadmium telluride solar cell of the present invention.
FIG. 2 is a schematic view of a process flow for preparing a double-sided light-transmissive cadmium telluride solar cell in accordance with the present invention.
Description of the element reference numerals
1 FTO transparent conductive glass
2 CdS window layer
3 CdTe absorption layer
4 NTO transparent conductive layer
5 glass cover plate
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 and fig. 2. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Referring to fig. 1, the present embodiment provides a double-sided light-transmissive CdTe solar cell, including: FTO transparent conductive glass 1, CdS window layer 2, CdTe absorption layer 3, NTO transparent conductive layer 4 and glass cover plate 5; the CdS window layer 2 is positioned on the surface of the FTO transparent conductive glass 1, the CdTe absorption layer 3 is positioned on the surface of the CdS window layer 2, the NTO transparent conductive layer 4 is positioned on the surface of the CdTe absorption layer 3, and the glass cover plate 5 is positioned on the surface of the NTO transparent conductive layer 4.
According to the double-sided light-transmitting CdTe solar cell, double-sided light transmission of the CdTe solar cell can be realized through the FTO transparent conductive glass 1 and the NTO transparent conductive layer 4, so that the light energy utilization rate, the photoelectric conversion rate and the power generation amount of the CdTe solar cell can be improved.
As an example, the FTO transparent conductive glass 1 includes a float glass and an FTO transparent conductive layer plated on a surface of the float glass, the FTO transparent conductive layer is a thin film of fluorine-doped tin oxide, and fluorine replaces a part of oxygen in the tin oxide to form an n-type semiconductor; the NTO transparent conductive layer 4 is a film of nitrogen-doped tin oxide, and nitrogen replaces part of oxygen in the tin oxide to form a p-type semiconductor.
Specifically, in the FTO transparent conductive glass 1, when the FTO transparent conductive layer is used, a fluorine element in the FTO transparent conductive layer may replace an oxygen element in tin oxide to supply electrons to form an n-type semiconductor; in the NTO transparent conductive layer 4, nitrogen can replace oxygen in tin oxide, so that a cavity can be provided to form a p-type semiconductor, and accordingly, the tin oxide can be doped by fluorine and nitrogen respectively, so that the corresponding carrier concentration can be increased, the conductivity of the tin oxide can be improved, and the photoelectric conversion rate and the power generation amount of the CdTe solar cell can be further improved.
As an example, the FTO transparent conductive layer in the FTO transparent conductive glass 1 is a crystal film layer of a tetragonal rutile structure; the NTO transparent conductive layer 4 is a crystal film layer with a tetragonal rutile structure; the carrier concentration in the FTO transparent conductive glass 1 and the NTO transparent conductive layer 4 is further improved, so that the conductivity can be further improved.
By way of example, the thickness range of the FTO transparent conductive glass 1 comprises 0.5mm to 10 mm; the thickness range of the CdS window layer 2 comprises 50 nm-300 nm; the thickness range of the CdTe absorption layer 3 comprises 1-5 μm; the thickness range of the NTO transparent conducting layer 4 comprises 50 nm-500 nm; the thickness range of the glass cover plate 5 comprises 0.5 mm-10 mm.
Specifically, in the FTO transparent conductive glass 1, the FTO transparent conductive layer can function as a light-transmitting, electron-blocking hole-blocking layer, and the float glass can function as a support, a pollution-preventing, and a light-transmitting layer; the CdS window layer 2 can play roles of transmitting light, forming a p-n junction and transmitting electrons; the CdTe absorption layer 3 is used as a main light absorption layer and can play a role in absorbing light, forming a p-n junction and transmitting holes; the NTO transparent conducting layer 4 can play a role in transmitting light, conducting holes and blocking electrons; the glass cover plate 5 can play a role in light transmission and packaging protection. The NTO transparent conductive layer 4 with the nanometer thickness replaces the traditional metal back electrode with the micrometer thickness. Wherein, the thickness of the FTO transparent conductive glass 1 can comprise 1mm, 5mm, 8mm and the like, the thickness of the CdS window layer 2 can comprise 100nm, 150mm, 200nm, 300nm and the like, and the thickness of the CdTe absorption layer 3 can comprise 2 μm, 2.5 μm, 3 μm and the like; the thickness of the NTO transparent conductive layer 4 may include 100nm, 250nm, 300nm, 500nm, etc.; the thickness of the glass cover plate 5 may include 0.5mm, 1mm, 5mm, 10mm, etc.
Referring to fig. 2, the embodiment further provides a method for manufacturing a double-sided light-transmitting CdTe solar cell, including the following steps:
providing FTO transparent conductive glass 1;
forming a CdS window layer 2 on the surface of the FTO transparent conductive glass 1;
forming a CdTe absorption layer 3 on the surface of the CdS window layer 2;
forming an NTO transparent conductive layer 4 on the surface of the CdTe absorption layer 3 by a magnetron sputtering method;
and a glass cover plate 5 is encapsulated on the surface of the NTO transparent conducting layer 4.
Specifically, the double-sided light-transmitting CdTe solar cell prepared by the method may include, but is not limited to, the double-sided light-transmitting CdTe solar cell, and the method for preparing the double-sided light-transmitting CdTe solar cell is not limited to this.
The double-sided light-transmitting CdTe solar cell in this embodiment is prepared by a magnetron sputtering method when the NTO transparent conductive layer 4 is prepared, the method is simple, and can be realized by simply modifying the existing equipment for producing the metal electrode, for example, a molybdenum metal target material is replaced by a tin oxide ceramic target or a tin metal target, argon in a chamber is replaced by mixed gas containing nitrogen, a direct-current power supply is replaced by a radio-frequency power supply, and a heating device is added, so that the double-sided light-transmitting CdTe solar cell has strong applicability.
As an example, the target material used in the magnetron sputtering method may include a tin oxide ceramic target or a tin metal target; the atmosphere adopted by the magnetron sputtering method comprises one of nitrogen, mixed gas of nitrogen and argon, mixed gas of nitrogen and oxygen, or mixed gas of nitrogen, argon and oxygen; the temperature range adopted by the magnetron sputtering method comprises 200-700 ℃; the magnetron sputtering method adopts a radio frequency power supply.
As an example, the FTO transparent conductive layer in the FTO transparent conductive glass 1 is provided as a crystal film layer of a tetragonal rutile structure; the formed NTO transparent conductive layer 4 is a crystal film layer with a tetragonal rutile structure; the thickness range of the FTO transparent conductive glass 1 comprises 0.5 mm-10 mm; the thickness range of the formed CdS window layer 2 comprises 50 nm-300 nm; the thickness range of the formed CdTe absorption layer 3 comprises 1-5 μm; the thickness range of the formed NTO transparent conductive layer 4 comprises 50 nm-500 nm; the thickness range of the formed glass cover plate 5 comprises 0.5 mm-10 mm.
The double-sided light-transmitting CdTe solar cell and the method for manufacturing the same according to the present invention will be further described with reference to the following specific examples, but the double-sided light-transmitting CdTe solar cell and the method for manufacturing the same are not limited to the following examples.
Example one
The embodiment is a double-sided transparent CdTe solar cell, as shown in fig. 1, sequentially including, from bottom to top: FTO transparent conductive glass 1, CdS window layer 2, CdTe absorption layer 3, NTO transparent conductive layer 4 and glass cover plate 5.
The preparation process comprises the following steps:
a) providing the FTO transparent conductive glass 1 with the thickness of 3.2mm, cleaning the FTO transparent conductive glass in deionized water by using a brush, and drying the FTO transparent conductive glass by using an air knife;
b) depositing a 50 nm-thick CdS window layer 2 on the upper surface of the cleaned FTO transparent conductive glass 1 by a near space sublimation method at the deposition temperature of 250 ℃, and depositing a 2 mu m-thick CdTe absorption layer 3 at the deposition temperature of 500 ℃.
c) Taking out the sample in the step b), and depositing the NTO transparent conducting layer 4 by using a magnetron sputtering method, wherein the preparation process parameters and the process are as follows:
1) before coating, the coating chamber is vacuumized to 1 × 10 by using a mechanical pump and a molecular pump-3Pa or less.
2) Selecting a tin oxide ceramic target, and adopting Ar and N with the ratio of 7:3 as sputtering gas2And a radio frequency power supply is selected.
3) Introducing Ar and N2Mixing the gas, and adjusting the gas pressure to 10 Pa.
4) The target distance was adjusted to 5 cm.
5) Starting the heating device, and heating to 400 ℃.
6) And starting a radio frequency power supply, wherein the sputtering power is 100W, and the pre-sputtering is carried out for 10 min.
7) And taking out the sample after coating for 20 min.
d) And (3) laminating and packaging the sample obtained in the step c) and the glass cover plate 5 by using a POE packaging material to complete the preparation of the double-sided light-transmitting CdTe solar cell of the embodiment, so as to obtain the double-sided light-transmitting CdTe solar cell.
Example two
The embodiment provides another preparation method of a double-sided light-transmitting CdTe solar cell, as shown in fig. 1, which sequentially includes, from bottom to top: FTO transparent conductive glass 1, CdS window layer 2, CdTe absorption layer 3, NTO transparent conductive layer 4 and glass cover plate 5.
The preparation process comprises the following steps:
a) providing the FTO transparent conductive glass 1 with the thickness of 2.5mm, carrying out ultrasonic treatment in absolute alcohol for 10min, and drying by using nitrogen;
b) depositing a CdS window layer 2 with the thickness of 100nm on the surface of the FTO transparent conductive glass 1 which is cleaned cleanly by a gas phase transportation method under the condition that the deposition temperature is 300 ℃, and depositing a CdTe absorption layer 3 with the thickness of 2 mu m under the condition that the deposition temperature is 400 ℃.
c) Taking out the sample in the step b), and depositing the NTO transparent conducting layer 4 by using a magnetron sputtering method, wherein the preparation process parameters and the process are as follows:
1) before coating, the coating chamber is vacuumized to 1 × 10 by using a mechanical pump and a molecular pump-3Pa or less.
2) Selecting a tin metal target and adopting Ar and O with the ratio of 5:3:2 as sputtering gas2And N2And a radio frequency power supply is selected.
3) Introducing Ar and O2And N2The pressure of the mixed gas (2) was adjusted to 8 Pa.
4) Starting the heating device, and heating to 500 ℃.
5) The target distance was adjusted to 3 cm.
6) And starting a radio frequency power supply, wherein the sputtering power is 150W, and the pre-sputtering is carried out for 10 min.
7) And taking out the sample after 15min of film coating.
d) Laminating and packaging the sample obtained in the step c) and the glass cover plate 5 by adopting an EVA packaging material to complete the preparation of the double-sided light-transmitting CdTe solar cell of the embodiment, so as to obtain the double-sided light-transmitting CdTe solar cell.
In the above embodiment, the NTO transparent conductive layer 4 with a nanometer thickness is used as the back electrode of the CdTe solar cell, so that the double-sided light transmission function of the CdTe solar cell can be realized, the light energy utilization rate, the photoelectric conversion rate and the power generation amount of the CdTe solar cell can be improved, and the preparation method is simple, easy to operate, completely repeatable and controllable.
In summary, according to the double-sided light-transmitting cadmium telluride solar cell and the preparation method thereof, double-sided light transmission of the CdTe solar cell can be realized through the FTO transparent conductive glass and the NTO transparent conductive layer, so that the light energy utilization rate, the photoelectric conversion rate and the power generation amount of the CdTe solar cell can be improved; furthermore, after a fluorine element in the FTO transparent conductive layer replaces part of oxygen element in tin oxide, electrons can be provided to form an n-type semiconductor, and after a nitrogen element in the NTO transparent conductive layer replaces part of oxygen element in tin oxide, holes can be provided to form a p-type semiconductor, so that the tin oxide can be doped to increase the corresponding carrier concentration, and further the conductivity of the tin oxide can be improved; the NTO transparent conductive layer is prepared by a magnetron sputtering method, the method is simple, and the method can be realized by simply modifying the existing equipment for producing the metal electrode, so that the method has stronger applicability.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A bifacial, light-transmissive cadmium telluride solar cell, comprising:
FTO transparent conductive glass;
the CdS window layer is positioned on the surface of the FTO transparent conductive glass;
a CdTe absorption layer located on a surface of the CdS window layer;
the NTO transparent conducting layer is positioned on the surface of the CdTe absorption layer;
and the glass cover plate is positioned on the surface of the NTO transparent conducting layer.
2. The double-sided, light-transmissive cadmium telluride solar cell of claim 1 wherein: the FTO transparent conductive glass comprises float glass and an FTO transparent conductive layer plated on the surface of the float glass, the FTO transparent conductive layer is a fluorine-doped tin oxide film, and fluorine replaces part of oxygen in tin oxide to form an n-type semiconductor; the NTO transparent conducting layer is a film of nitrogen-doped tin oxide, and nitrogen elements replace part of oxygen elements in the tin oxide to form a p-type semiconductor.
3. The double-sided, light-transmissive cadmium telluride solar cell of claim 1 wherein: the FTO transparent conductive layer in the FTO transparent conductive glass is a crystal film layer with a tetragonal rutile structure; the NTO transparent conductive layer is a crystal film layer with a tetragonal rutile structure.
4. The double-sided, light-transmissive cadmium telluride solar cell of claim 1 wherein: the thickness range of the FTO transparent conductive glass comprises 0.5 mm-10 mm; the thickness range of the CdS window layer comprises 50 nm-300 nm; the thickness range of the CdTe absorption layer comprises 1-5 mu m; the thickness range of the NTO transparent conducting layer comprises 50 nm-500 nm; the thickness range of the glass cover plate comprises 0.5 mm-10 mm.
5. A preparation method of a double-sided light-transmitting cadmium telluride solar cell is characterized by comprising the following steps:
providing FTO transparent conductive glass;
forming a CdS window layer on the surface of the FTO transparent conductive glass;
forming a CdTe absorption layer on the surface of the CdS window layer;
forming an NTO transparent conductive layer on the surface of the CdTe absorption layer by a magnetron sputtering method;
and encapsulating a glass cover plate on the surface of the NTO transparent conducting layer.
6. The method of claim 5, wherein the double-sided light transmissive cadmium telluride solar cell is prepared by: the target material adopted by the magnetron sputtering method comprises a tin oxide ceramic target or a tin metal target.
7. The method of claim 5, wherein the double-sided light transmissive cadmium telluride solar cell is prepared by: the atmosphere adopted by the magnetron sputtering method comprises one of nitrogen, mixed gas of nitrogen and argon, mixed gas of nitrogen and oxygen, or mixed gas of nitrogen, argon and oxygen.
8. The method of claim 5, wherein the double-sided light transmissive cadmium telluride solar cell is prepared by: the temperature range adopted by the magnetron sputtering method comprises 200-700 ℃.
9. The method of claim 5, wherein the double-sided light transmissive cadmium telluride solar cell is prepared by: the magnetron sputtering method adopts a radio frequency power supply.
10. The method of claim 5, wherein the double-sided light transmissive cadmium telluride solar cell is prepared by: the FTO transparent conductive layer in the FTO transparent conductive glass is a crystal film layer with a tetragonal rutile structure; the formed NTO transparent conductive layer is a crystal film layer with a tetragonal rutile structure; the thickness range of the FTO transparent conductive glass comprises 0.5 mm-10 mm; the thickness range of the formed CdS window layer comprises 50 nm-300 nm; the thickness range of the formed CdTe absorption layer comprises 1-5 μm; the thickness range of the formed NTO transparent conductive layer comprises 50 nm-500 nm; the thickness range of the formed glass cover plate comprises 0.5 mm-10 mm.
CN202010451054.5A 2020-05-25 2020-05-25 Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof Pending CN111697085A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021238175A1 (en) * 2020-05-25 2021-12-02 中国建材国际工程集团有限公司 Double-sided light-transmitting cadmium telluride solar cell and preparation method therefor
CN114361293A (en) * 2021-12-29 2022-04-15 中国建材国际工程集团有限公司 Double-sided power generation CdTe solar cell and manufacturing method thereof
WO2024207974A1 (en) * 2023-04-07 2024-10-10 浙江乐居户外用品有限公司 Sunroom

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205881920U (en) * 2016-07-14 2017-01-11 盐城普兰特新能源有限公司 Cadmium telluride thin -film solar cell and module thereof
CN107180880A (en) * 2017-05-23 2017-09-19 北京大学深圳研究生院 A kind of ultra-thin translucent thin film solar cell and preparation method thereof
CN206532786U (en) * 2016-10-27 2017-09-29 惠州比亚迪实业有限公司 A kind of solar cell
CN108172640A (en) * 2017-12-28 2018-06-15 成都中建材光电材料有限公司 A kind of cadmium telluride diaphragm solar battery of generating electricity on two sides and preparation method thereof
CN110544729A (en) * 2019-08-09 2019-12-06 中山瑞科新能源有限公司 CdTe double-sided solar cell and preparation method thereof
CN111129174A (en) * 2019-12-17 2020-05-08 中国建材国际工程集团有限公司 NTO transparent conductive substrate and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8735718B2 (en) * 2010-09-13 2014-05-27 University Of Central Florida Electrode structure, method and applications
CN111697085A (en) * 2020-05-25 2020-09-22 中国建材国际工程集团有限公司 Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205881920U (en) * 2016-07-14 2017-01-11 盐城普兰特新能源有限公司 Cadmium telluride thin -film solar cell and module thereof
CN206532786U (en) * 2016-10-27 2017-09-29 惠州比亚迪实业有限公司 A kind of solar cell
CN107180880A (en) * 2017-05-23 2017-09-19 北京大学深圳研究生院 A kind of ultra-thin translucent thin film solar cell and preparation method thereof
CN108172640A (en) * 2017-12-28 2018-06-15 成都中建材光电材料有限公司 A kind of cadmium telluride diaphragm solar battery of generating electricity on two sides and preparation method thereof
CN110544729A (en) * 2019-08-09 2019-12-06 中山瑞科新能源有限公司 CdTe double-sided solar cell and preparation method thereof
CN111129174A (en) * 2019-12-17 2020-05-08 中国建材国际工程集团有限公司 NTO transparent conductive substrate and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021238175A1 (en) * 2020-05-25 2021-12-02 中国建材国际工程集团有限公司 Double-sided light-transmitting cadmium telluride solar cell and preparation method therefor
CN114361293A (en) * 2021-12-29 2022-04-15 中国建材国际工程集团有限公司 Double-sided power generation CdTe solar cell and manufacturing method thereof
CN114361293B (en) * 2021-12-29 2024-01-26 中国建材国际工程集团有限公司 Double-sided power generation CdTe solar cell and manufacturing method thereof
WO2024207974A1 (en) * 2023-04-07 2024-10-10 浙江乐居户外用品有限公司 Sunroom

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Application publication date: 20200922