CN114361293A - Double-sided power generation CdTe solar cell and manufacturing method thereof - Google Patents

Double-sided power generation CdTe solar cell and manufacturing method thereof Download PDF

Info

Publication number
CN114361293A
CN114361293A CN202111641442.0A CN202111641442A CN114361293A CN 114361293 A CN114361293 A CN 114361293A CN 202111641442 A CN202111641442 A CN 202111641442A CN 114361293 A CN114361293 A CN 114361293A
Authority
CN
China
Prior art keywords
layer
solar cell
cds
cdte
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202111641442.0A
Other languages
Chinese (zh)
Other versions
CN114361293B (en
Inventor
彭寿
马立云
汪元元
殷新建
吴一民
周显华
陈瑛
储静远
盖琳琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Triumph International Engineering Co Ltd
Original Assignee
China Triumph International Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Triumph International Engineering Co Ltd filed Critical China Triumph International Engineering Co Ltd
Priority to CN202111641442.0A priority Critical patent/CN114361293B/en
Publication of CN114361293A publication Critical patent/CN114361293A/en
Application granted granted Critical
Publication of CN114361293B publication Critical patent/CN114361293B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention provides a double-sided power generation CdTe solar cell and a manufacturing method thereof.

Description

Double-sided power generation CdTe solar cell and manufacturing method thereof
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to a double-sided power generation CdTe solar cell and a manufacturing method thereof.
Background
The cadmium telluride solar cell is a thin film solar cell based on a heterojunction of p-type CdTe and n-type CdS/CdSe, and has the advantages of convenience in manufacturing, low cost, lighter weight and the like compared with a monocrystalline silicon solar cell. The absorption spectrum of cadmium telluride is consistent with the solar spectrum, and can absorb more than 95% of sunlight. The CdTe solar cell has the advantage of good weak light power generation performance, so that the development of a double-sided light-transmitting CdTe solar cell structure for realizing the power generation gain of a non-light-receiving surface of the device has a good application prospect. However, the conventional Mo metal back electrode is a light-tight material layer, and the CdTe solar cell cannot absorb sunlight from the back surface. Researches have been made on the adoption of P-type transparent oxide to replace Mo electrodes to realize double-sided light transmission, but the P-type transparent oxide has higher resistance than N-type TCO, so that the problems of high series resistance, low current and low filling of the battery are caused, and the overall efficiency is influenced. Therefore, it is necessary to develop a CdTe solar cell structure with a transparent back electrode with high conductivity to improve the light energy utilization rate and the total power generation capacity of the CdTe solar cell.
Disclosure of Invention
In view of the above disadvantages of the prior art, the present invention is directed to a method for manufacturing a double-sided CdTe solar cell, which is used to solve the problem that the CdTe solar cell can only receive light on one side.
To achieve the above and other related objects, the present invention provides a method for manufacturing a double-sided power generation CdTe solar cell, comprising the steps of:
1) providing a transparent substrate layer with a transparent bottom electrode, and depositing a CdS/CdSe buffer layer on the transparent bottom electrode; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing process;
2) a back contact layer is deposited on the CdTe light absorption layer;
3) scribing by using a first laser, cutting off the transparent bottom electrode, the CdS/CdSe buffer layer, the CdS/CdSe light absorption layer and the back contact layer, and dividing the whole film layer into a plurality of battery units;
4) coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling the reticle;
5) cleaning the unexposed photoresist, scribing a line beside each scribing position close to the first laser by adopting a second laser, and cutting off the CdS/CdSe buffer layer and the CdS/CdSe light absorption layer;
6) depositing PEDOT on the whole film surface, namely a PSS transparent electrode;
7) printing low-temperature cured silver paste grid lines on the PEDOT, PSS transparent electrode in parallel to the scribing direction, and drying and curing to obtain a silver grid line back electrode;
8) and scribing lines beside each scribing line close to the second laser by using a third laser, scribing off the CdS/CdSe buffer layer, the CdS/CdSe light absorption layer and the back electrode, and sequentially arranging the first laser, the second laser and the third laser scribing lines to obtain the CdTe solar cell with a plurality of cell units connected in series.
Optionally, the transparent substrate layer is one of an ultra-white glass substrate, a tempered glass substrate and an organic glass substrate; the transparent bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
Optionally, the CdS/CdSe buffer layer is 50-100 nm thick, and the CdTe light absorption layer is 2.0-4.0 μm thick; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises one of vapor transmission deposition and close-space sublimation deposition.
Optionally, the activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
PSS transparent electrode deposition method is slit coating, roller coating, chemical vapor deposition, and conductivity is more than 600Scm-1。
Optionally, the width of the top electrode of the silver grid line is 40-100 μm, and the curing temperature is less than 180 ℃.
Optionally, the width of the laser scribe line is 20-100 μm, and the edge distance between adjacent scribe lines in each group of scribe lines is 30-100 μm.
Optionally, the back contact layer is made of Cu-doped ZnTe and has a thickness of 20-30 nm.
Optionally, a window layer is arranged between the transparent bottom electrode and the CdS/CdSe buffer layer, the window layer is an MgZnO film layer, and the thickness of the window layer is 40-70 nm.
The invention also provides a double-sided power generation CdTe solar cell, which at least comprises the following structures:
a transparent substrate layer; and a transparent bottom electrode, a window layer, a CdS/CdSe buffer layer, a CdTe light absorption layer, a back contact layer, PEDOT, a PSS transparent conductive layer and a silver grid line back electrode are sequentially deposited on the transparent substrate layer.
As described above, the method for manufacturing a double-sided power generation CdTe solar cell according to the present invention has the following advantageous effects: PSS electrode and silver grid line are matched to replace traditional Mo electrode to realize double-sided light receiving power generation of CdTe solar cell, meanwhile, the problems of high series resistance and low filling caused by low conductivity of P-type transparent oxide electrode are avoided, and the whole power generation efficiency and power generation capacity are improved.
Drawings
FIG. 1 shows a process flow diagram of a manufacturing method of a double-sided power generation CdTe solar cell of the invention.
Fig. 2 to 10 are schematic structural views showing steps of the method for manufacturing a double-sided power generation CdTe solar cell according to the present invention, wherein fig. 10 shows a double-sided power generation CdTe solar cell structure according to the present invention.
Element number description:
100 transparent substrate layer
200 transparent bottom electrode
300 semiconductor heterojunction
301 CdS/CdSe buffer layers
302 CdTe light absorption layer
400 window layer
500 photo resist
600 PEDOT PSS transparent electrode layer
700 silver grid line
S1-S8
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
Referring to fig. 1 to 9, it should be noted that the drawings provided in the present embodiment are only schematic illustrations for explaining the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, number and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
The present embodiment provides a method for manufacturing a double-sided power generation CdTe solar cell, which includes steps S1 to S8 as shown in fig. 1.
Specifically, the specific process of the manufacturing method of the double-sided power generation CdTe solar cell of the embodiment is as shown in fig. 2 to 9:
as shown in fig. 2, a transparent substrate layer 100 with a transparent bottom electrode 200 is provided and a window layer 400 is deposited on the bottom electrode 200 of the substrate layer 100. The substrate layer can be one of an ultra-white glass substrate, a toughened glass substrate and an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer. The window layer 400 is an MgZnO film layer, and the thickness of the window layer is 40-70 nm.
As shown in fig. 3, a CdS/CdSe buffer layer 301 is deposited on the window layer 400, wherein the CdS/CdSe buffer layer 301 is a stacked layer of a CdS layer and a CdSe layer; depositing a CdTe light absorption layer 302 on the CdS/CdSe buffer layer 301, and performing activation annealing treatment on the CdTe light absorption layer 302 through an activation annealing procedure. The CdS/CdSe buffer layer 301 is 50-100 nm thick, and the CdTe light absorption layer 302 is 2.0-4.0 mu m thick; the CdS/CdSe buffer layer 301 and the CdTe light absorbing layer 302 form a semiconductor heterojunction layer 300, and the deposition method of the semiconductor heterojunction layer 300 comprises one of vapor transport deposition and close-space sublimation deposition. The activation annealing temperature is 350-600 ℃, and the time is 5-40 min. A back contact layer can also be deposited on the CdTe light absorption layer 302, and the back contact layer is made of Cu-doped ZnTe and has the thickness of 20-30 nm.
As shown in fig. 4, the transparent bottom electrode 200, the CdS/CdSe buffer layer 301, the CdTe light absorbing layer 302 and the window layer 400 are cut off by scribing P1 with a first laser, so as to divide the whole film into a plurality of cells; the width of the laser scribe line is 20-100 μm.
As shown in fig. 5, a photoresist 500 is coated, exposed and developed by ultraviolet light in the substrate direction, and the reticle is filled;
as shown in fig. 6, the unexposed photoresist is cleaned and a second laser P2 is used to scribe lines next to each of the first laser scribes; etching off the CdS/CdSe buffer layer 301 and the CdTe light absorption layer 302; the width of the laser scribe line is 20-100 μm, and the distance between the laser scribe line and the edge of the adjacent P1 scribe line is 30-100 μm.
As shown in fig. 7, PEDOT, PSS transparent electrode layer 600 was deposited over the entire membrane surface; the deposition method can be slit coating, roller coating, chemical vapor deposition, and the conductivity is more than 600Scm-1。
As shown in fig. 8, a low-temperature cured silver paste grid line is printed on the PEDOT: PSS transparent electrode in parallel to the scribing direction, and a silver grid line back electrode is obtained after drying and curing, wherein the curing temperature is less than 180 ℃.
As shown in FIG. 9, a third laser P3 is adopted to scribe lines beside each scribing line close to the second laser, so that the CdS/CdSe buffer layer 301, the CdTe light absorption layer 302 and the PEDOT, namely the PSS transparent electrode layer 600 are scribed, the width of the laser scribing line is 20-100 μm, and the distance between the laser scribing line and the edge of the adjacent P2 scribing line is 30-100 μm. The first laser, the second laser and the third laser are sequentially arrayed in a scribing way to obtain the double-sided power generation CdTe solar cell with a plurality of cell units connected in series.
As shown in fig. 10, the embodiment further provides a double-sided power generation CdTe solar cell structure, which at least includes a transparent substrate layer 100, on which a transparent bottom electrode 200, a window layer 400, a CdS/CdSe buffer layer 301, a CdTe light absorption layer 302, a back contact layer, PEDOT, a PSS transparent conductive layer 600, and a silver grid line back electrode 700 are sequentially deposited.
In conclusion, the double-sided light receiving and power generation of the CdTe solar cell are realized by adopting the high-conductivity P-type conductive polymer PEDOT, namely the PSS electrode and the silver grid line, the problems of high series resistance and low filling caused by low conductivity of the P-type transparent oxide electrode are solved, and the overall power generation efficiency and power generation capacity are improved. Therefore, the present invention effectively overcomes the disadvantages of the prior art and has a high industrial value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A manufacturing method of a double-sided power generation CdTe solar cell is characterized by comprising the following steps:
1) providing a transparent substrate layer with a transparent bottom electrode, and depositing a CdS/CdSe buffer layer on the transparent bottom electrode; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing process;
2) a back contact layer is deposited on the CdTe light absorption layer;
3) scribing by using a first laser, cutting off the transparent bottom electrode, the CdS/CdSe buffer layer, the CdS/CdSe light absorption layer and the back contact layer, and dividing the whole film layer into a plurality of battery units;
4) coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling the reticle;
5) cleaning the unexposed photoresist, scribing a line beside each scribing position close to the first laser by adopting a second laser, and cutting off the CdS/CdSe buffer layer and the CdS/CdSe light absorption layer;
6) depositing PEDOT on the whole film surface, namely a PSS transparent electrode;
7) printing low-temperature cured silver paste grid lines on the PEDOT, PSS transparent electrode in parallel to the scribing direction, and drying and curing to obtain a silver grid line back electrode;
8) and scribing lines beside each scribing line close to the second laser by using a third laser, scribing off the CdS/CdSe buffer layer, the CdS/CdSe light absorption layer and the back electrode, and sequentially arranging the first laser, the second laser and the third laser scribing lines to obtain the CdTe solar cell with a plurality of cell units connected in series.
2. The manufacturing method of double-sided power generation CdTe solar cell in claim 1, wherein: the transparent substrate layer is one of a super-white glass substrate, a toughened glass substrate and an organic glass substrate; the transparent bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
3. The manufacturing method of double-sided power generation CdTe solar cell in claim 1, wherein: the CdS/CdSe buffer layer is 50-100 nm thick, and the CdTe light absorption layer is 2.0-4.0 mu m thick; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises one of vapor transmission deposition and close-space sublimation deposition.
4. The manufacturing method of double-sided power generation CdTe solar cell in claim 1, wherein: the activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
5. The manufacturing method of double-sided power generation CdTe solar cell in claim 1, wherein: the PEDOT PSS transparent electrode deposition method comprises slit coating, roller coating and chemical vapor deposition, and the conductivity is more than 600Scm-1。
6. The manufacturing method of double-sided power generation CdTe solar cell in claim 1, wherein: the width of the top electrode of the silver grid line is 40-100 mu m, and the curing temperature is less than 180 ℃.
7. The manufacturing method of double-sided power generation CdTe solar cell in claim 1, wherein: the laser scribing width is 20-100 mu m, and the edge distance between adjacent scribing lines in each group of scribing lines is 30-100 mu m.
8. The manufacturing method of double-sided power generation CdTe solar cell in claim 1, wherein: the back contact layer is made of Cu-doped ZnTe and has the thickness of 20-30 nm.
9. The method for manufacturing a double-sided power generation CdTe solar cell as defined in any one of claims 1 to 8, wherein: and a window layer is arranged between the transparent bottom electrode and the CdS/CdSe buffer layer, the window layer is an MgZnO film layer, and the thickness of the window layer is 40-70 nm.
10. A double-sided electrical CdTe solar cell, characterized in that the double-sided electrical CdTe solar cell structure comprises at least:
a transparent substrate layer; and a transparent bottom electrode, a window layer, a CdS/CdSe buffer layer, a CdTe light absorption layer, a back contact layer, PEDOT, a PSS transparent conductive layer and a silver grid line back electrode are sequentially deposited on the transparent substrate layer.
CN202111641442.0A 2021-12-29 2021-12-29 Double-sided power generation CdTe solar cell and manufacturing method thereof Active CN114361293B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111641442.0A CN114361293B (en) 2021-12-29 2021-12-29 Double-sided power generation CdTe solar cell and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111641442.0A CN114361293B (en) 2021-12-29 2021-12-29 Double-sided power generation CdTe solar cell and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN114361293A true CN114361293A (en) 2022-04-15
CN114361293B CN114361293B (en) 2024-01-26

Family

ID=81102826

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111641442.0A Active CN114361293B (en) 2021-12-29 2021-12-29 Double-sided power generation CdTe solar cell and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN114361293B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160027954A1 (en) * 2013-03-12 2016-01-28 New Jersey Institute Of Technology System and Method for Thin Film Photovoltaic Modules and Back Contact for Thin Solar Cells
CN108091707A (en) * 2017-12-13 2018-05-29 浙江海洋大学 It is a kind of based on nanostructured it is two-sided by/fall into light monocrystaline silicon solar cell and preparation method thereof
CN108172640A (en) * 2017-12-28 2018-06-15 成都中建材光电材料有限公司 A kind of cadmium telluride diaphragm solar battery of generating electricity on two sides and preparation method thereof
CN111244278A (en) * 2018-11-29 2020-06-05 中国科学院大连化学物理研究所 Non-doped crystalline silicon heterojunction perovskite laminated solar cell structure and preparation method
CN111697085A (en) * 2020-05-25 2020-09-22 中国建材国际工程集团有限公司 Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof
CN112768556A (en) * 2020-12-31 2021-05-07 中国建材国际工程集团有限公司 Manufacturing process of CdTe solar cell
CN113270506A (en) * 2020-12-31 2021-08-17 中国建材国际工程集团有限公司 Method for manufacturing back electrode of CdTe solar cell

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160027954A1 (en) * 2013-03-12 2016-01-28 New Jersey Institute Of Technology System and Method for Thin Film Photovoltaic Modules and Back Contact for Thin Solar Cells
CN108091707A (en) * 2017-12-13 2018-05-29 浙江海洋大学 It is a kind of based on nanostructured it is two-sided by/fall into light monocrystaline silicon solar cell and preparation method thereof
CN108172640A (en) * 2017-12-28 2018-06-15 成都中建材光电材料有限公司 A kind of cadmium telluride diaphragm solar battery of generating electricity on two sides and preparation method thereof
CN111244278A (en) * 2018-11-29 2020-06-05 中国科学院大连化学物理研究所 Non-doped crystalline silicon heterojunction perovskite laminated solar cell structure and preparation method
CN111697085A (en) * 2020-05-25 2020-09-22 中国建材国际工程集团有限公司 Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof
CN112768556A (en) * 2020-12-31 2021-05-07 中国建材国际工程集团有限公司 Manufacturing process of CdTe solar cell
CN113270506A (en) * 2020-12-31 2021-08-17 中国建材国际工程集团有限公司 Method for manufacturing back electrode of CdTe solar cell

Also Published As

Publication number Publication date
CN114361293B (en) 2024-01-26

Similar Documents

Publication Publication Date Title
Bailie et al. Semi-transparent perovskite solar cells for tandems with silicon and CIGS
US8039292B2 (en) Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes
US20160284882A1 (en) Solar Cell
TW201436264A (en) Solar cell and method of manufacture thereof
KR20120063324A (en) Bifacial solar cell
US20130152999A1 (en) Photovoltaic component for use under concentrated solar flux
CN112768556A (en) Manufacturing process of CdTe solar cell
KR101363327B1 (en) Thin film type Solar Cell and Method for manufacturing the same
CN104115283B (en) Solar cell module and method of fabricating the same
CN103988317B (en) Solar cell and solar module
CN105023966A (en) Interconnect for a thin film photovoltaic solar cell, and method for making the same
US20140083486A1 (en) Solar cell and method for manufacturing same
CN114361293B (en) Double-sided power generation CdTe solar cell and manufacturing method thereof
KR101272997B1 (en) Solar cell apparatus and method of fabricating the same
KR101173418B1 (en) Solar cell and method of fabricating the same
CN213519994U (en) Thin film solar cell
CN114388655B (en) Passivating CdTe solar cell and manufacturing method thereof
CN104810413B (en) Solar battery front side contact layer with thickness gradient
CN104254926B (en) Photovoltaic apparatus
CN103975443A (en) Solar cell and solar cell module using the same
KR101186242B1 (en) Optoelectronic component having three-dimentional pattern and fablication method thereof
KR101370554B1 (en) Thin film solar cell and method for producing thereof
KR101445041B1 (en) Solar cell with 3-dimensional structure of light absorber layer and manufacturing method therof
CN102157580B (en) Solar cell and method for manufacturing same
KR20120114002A (en) Solar cell and method of fabircating the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant