CN114361293B - Double-sided power generation CdTe solar cell and manufacturing method thereof - Google Patents
Double-sided power generation CdTe solar cell and manufacturing method thereof Download PDFInfo
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- CN114361293B CN114361293B CN202111641442.0A CN202111641442A CN114361293B CN 114361293 B CN114361293 B CN 114361293B CN 202111641442 A CN202111641442 A CN 202111641442A CN 114361293 B CN114361293 B CN 114361293B
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 60
- 238000010248 power generation Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- 238000011049 filling Methods 0.000 claims abstract description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 25
- 230000031700 light absorption Effects 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 230000004913 activation Effects 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000001723 curing Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000007761 roller coating Methods 0.000 claims description 3
- 238000000859 sublimation Methods 0.000 claims description 3
- 230000008022 sublimation Effects 0.000 claims description 3
- 239000005341 toughened glass Substances 0.000 claims description 3
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000010329 laser etching Methods 0.000 claims description 2
- 238000013035 low temperature curing Methods 0.000 claims description 2
- 229920002530 polyetherether ketone Polymers 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention provides a double-sided power generation CdTe solar cell and a manufacturing method thereof, wherein a high-conductivity P-type conductive polymer PEDOT-PSS electrode is matched with a silver grid line to replace a traditional Mo electrode so as to realize double-sided light-receiving power generation of the CdTe solar cell, and meanwhile, the problems of high series resistance and low filling caused by low conductivity of a P-type transparent oxide electrode are avoided, and the overall power generation efficiency and power generation capacity are improved.
Description
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to a double-sided power generation CdTe solar cell and a manufacturing method thereof.
Background
The cadmium telluride solar cell is a thin film solar cell based on the heterojunction of p-type CdTe and n-type CdS/CdSe, and has the advantages of convenience in manufacturing, low cost, lighter weight and the like compared with a monocrystalline silicon solar cell. The absorption spectrum of cadmium telluride is consistent with the solar spectrum, and can absorb more than 95% of sunlight. The CdTe solar cell has the advantage of good weak light power generation performance, so that development of a double-sided light-transmitting CdTe solar cell structure realizes the power generation gain of a device without a light receiving surface and has good application prospect. However, the conventional Mo metal back electrode is an opaque material layer, and CdTe solar cells cannot absorb sunlight from the back side. The P-type transparent oxide is adopted to replace the Mo electrode to realize double-sided light transmission, but the P-type transparent oxide has higher resistance than the N-type TCO, so that the problems of high series resistance, low current and low filling of the battery are caused, and the overall efficiency is influenced. Therefore, it is necessary to develop a CdTe solar cell structure with a transparent back electrode having high conductivity to improve the light energy utilization rate and the overall power generation of the CdTe solar cell.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a method for manufacturing a CdTe solar cell with double-sided power generation, which is used for solving the problem that the CdTe solar cell in the prior art can only receive light on one side.
To achieve the above and other related objects, the present invention provides a method for manufacturing a CdTe solar cell with double-sided power generation, comprising the steps of:
1) Providing a transparent substrate layer with a transparent bottom electrode, and depositing a CdS/CdSe buffer layer on the transparent bottom electrode; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing procedure;
2) A back contact layer is deposited on the CdTe light absorption layer;
3) A first laser is adopted for scribing, a transparent bottom electrode, a CdS/CdSe buffer layer, a CdS/CdSe light absorption layer and a back contact layer are cut off, and the whole film layer is divided into a plurality of battery units;
4) Coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling a scribing line;
5) Cleaning the unexposed photoresist, and etching a CdS/CdSe buffer layer and a CdS/CdSe light absorption layer by using a second laser to etch a line beside each position close to the first laser etching line;
6) Depositing PEDOT (polyether-ether-ketone) PSS transparent electrode on the whole film surface;
7) Printing a low-temperature curing silver paste grid line on the PEDOT-PSS transparent electrode in parallel to the direction of the scribing line, and drying and curing to obtain a silver grid line back electrode;
8) And etching a side of each scribing position adjacent to the second laser by using a third laser, and cutting off the CdS/CdSe buffer layer, the CdS/CdSe light absorption layer and the back electrode, wherein the first laser, the second laser and the third laser are sequentially arranged in a scribing way, so that the CdTe solar cell with a plurality of battery units connected in series is obtained.
Optionally, the transparent substrate layer is one of an ultrawhite glass substrate, a tempered glass substrate and an organic glass substrate; the transparent bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
Optionally, the thickness of the CdS/CdSe buffer layer is 50-100 nm, and the thickness of the CdTe light absorption layer is 2.0-4.0 mu m; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises one of vapor transmission deposition and near space sublimation deposition.
Optionally, the activation annealing temperature is 350-600 ℃ and the time is 5-40 min.
Optionally, the PEDOT-PSS transparent electrode deposition method comprises slit coating, roller coating and chemical vapor deposition, wherein the conductivity is more than 600Scm -1 。
Optionally, the width of the top electrode of the silver grid line is 40-100 mu m, and the curing temperature is less than 180 ℃.
Optionally, the laser score line has a width of 20-100 μm, and the adjacent score line edges in each set of score lines have a spacing of 30-100 μm.
Optionally, the back contact layer is made of Cu doped ZnTe, and the thickness is 20-30 nm.
Optionally, a window layer is arranged between the transparent bottom electrode and the CdS/CdSe buffer layer, the window layer is an MgZnO film layer, and the thickness of the window layer is 40-70 nm.
The invention also provides a double-sided power generation CdTe solar cell, which at least comprises the following structure:
a transparent substrate layer; and a transparent bottom electrode, a window layer, a CdS/CdSe buffer layer, a CdTe light absorption layer, a back contact layer and a PEDOT: PSS transparent conductive layer and a silver grid line back electrode are sequentially deposited on the transparent substrate layer.
As described above, the method for manufacturing the double-sided power generation CdTe solar cell has the following beneficial effects: the high-conductivity P-type conductive polymer PEDOT-PSS electrode is matched with a silver grid line to replace a traditional Mo electrode so as to realize double-sided light-receiving power generation of the CdTe solar cell, meanwhile, the problems of high series resistance and low filling caused by low conductivity of the P-type transparent oxide electrode are avoided, and the overall power generation efficiency and power generation capacity are improved.
Drawings
FIG. 1 shows a process flow diagram of a method for manufacturing a double-sided power CdTe solar cell of the invention.
Fig. 2 to 10 are schematic structural views showing steps of a method for manufacturing a CdTe solar cell with double-sided power generation according to the present invention, wherein fig. 10 shows a CdTe solar cell with double-sided power generation according to the present invention.
Description of element numbers:
100. transparent substrate layer
200. Transparent bottom electrode
300. Semiconductor heterojunction
301 CdS/CdSe buffer layer
302 CdTe light absorption layer
400. Window layer
500. Photoresist
600 PEDOT PSS transparent electrode layer
700. Silver grid line
S1 to S8 steps
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
Referring to fig. 1 to 9, it should be noted that the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the illustration, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
The embodiment provides a manufacturing method of a double-sided power generation CdTe solar cell, and the step flow is shown as step S1 to step S8 in FIG. 1.
Specifically, the specific process of the method for manufacturing the CdTe solar cell with double-sided power generation in this embodiment is shown in fig. 2 to 9:
as shown in fig. 2, a transparent substrate layer 100 with a transparent bottom electrode 200 is provided, and a window layer 400 is deposited on the bottom electrode 200 of the substrate layer 100. The substrate layer can be one of an ultrawhite glass substrate, a tempered glass substrate and an organic glass substrate; the material of the bottom electrode is one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer. The window layer 400 is a MgZnO film layer, and the thickness of the window layer is 40-70 nm.
As shown in fig. 3, a CdS/CdSe buffer layer 301 is deposited on the window layer 400, where the CdS/CdSe buffer layer 301 is a stack of a CdS layer and a CdSe layer; and depositing a CdTe light absorption layer 302 on the CdS/CdSe buffer layer 301, and performing activation annealing treatment on the CdTe light absorption layer 302 through an activation annealing procedure. The thickness of the CdS/CdSe buffer layer 301 is 50-100 nm, and the thickness of the CdTe light absorbing layer 302 is 2.0-4.0 mu m; the CdS/CdSe buffer layer 301 and the CdTe light absorbing layer 302 form a semiconductor heterojunction layer 300, and the deposition method of the semiconductor heterojunction layer 300 comprises one of vapor transport deposition and near-space sublimation deposition. The activation annealing temperature is 350-600 ℃ and the time is 5-40 min. A back contact layer can be deposited on the CdTe light absorbing layer 302, and the back contact layer is made of Cu doped ZnTe and has a thickness of 20-30 nm.
As shown in fig. 4, the transparent bottom electrode 200, the cds/CdSe buffer layer 301, the CdTe light absorbing layer 302, and the window layer 400 are cut by using the first laser scribe line P1, dividing the entire film into a plurality of battery cells; the width of the laser scribing line is 20-100 mu m.
As shown in fig. 5, a photoresist 500 is coated, and a scribing line is filled through ultraviolet light exposure and development in the substrate direction;
as shown in fig. 6, the unexposed photoresist is cleaned, using a second laser P2 to scribe each of the adjacent first laser scribe lines; etching the CdS/CdSe buffer layer 301 and the CdTe light absorbing layer 302; the width of the laser scribing line is 20-100 mu m, and the distance between the laser scribing line and the edge of the adjacent P1 scribing line is 30-100 mu m.
As shown in fig. 7, PEDOT: PSS transparent electrode layer 600 is deposited over the entire film surface; the deposition method can be slit coating, roller coating, chemical vapor deposition, and has conductivity of more than 600Scm -1 。
As shown in fig. 8, a low-temperature cured silver paste grid line is printed on the PEDOT: PSS transparent electrode in parallel to the direction of a scribing line, and a silver grid line back electrode is obtained after drying and curing, wherein the curing temperature is less than 180 ℃.
As shown in fig. 9, a third laser P3 is used to scribe the CdS/CdSe buffer layer 301, cdTe light absorbing layer 302 and PEDOT: PSS transparent electrode layer 600 next to each second laser scribe line, with a laser scribe line width of 20-100 μm and a pitch of 30-100 μm from the edge of the adjacent P2 scribe line. And the first laser, the second laser and the third laser are sequentially arranged in a scribing way, so that the double-sided power generation CdTe solar cell with a plurality of battery units connected in series is obtained.
As shown in fig. 10, the present embodiment further provides a double-sided power generation CdTe solar cell structure, which at least includes a transparent substrate layer 100, on which a transparent bottom electrode 200, a window layer 400, a CdS/CdSe buffer layer 301, a CdTe light absorbing layer 302, a back contact layer, and PEDOT are sequentially deposited, a PSS transparent conductive layer 600, and a silver gate line back electrode 700.
In summary, the invention adopts the high-conductivity P-type conductive polymer PEDOT-PSS electrode to realize the double-sided light-receiving power generation of the CdTe solar cell by matching with the silver grid line, and simultaneously avoids the problems of high series resistance and low filling caused by the low conductivity of the P-type transparent oxide electrode, thereby improving the overall power generation efficiency and power generation capacity. Therefore, the invention effectively overcomes the defects in the prior art and has high industrial value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. The manufacturing method of the double-sided power generation CdTe solar cell is characterized by comprising the following steps of:
1) Providing a transparent substrate layer with a transparent bottom electrode, and depositing a CdS/CdSe buffer layer on the transparent bottom electrode; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing procedure;
2) A back contact layer is deposited on the CdTe light absorption layer;
3) A first laser is adopted for scribing, a transparent bottom electrode, a CdS/CdSe buffer layer, a CdS/CdSe light absorption layer and a back contact layer are cut off, and the whole film layer is divided into a plurality of battery units;
4) Coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling a scribing line;
5) Cleaning the unexposed photoresist, and etching a CdS/CdSe buffer layer and a CdS/CdSe light absorption layer by using a second laser to etch a line beside each position close to the first laser etching line;
6) Depositing PEDOT (polyether-ether-ketone) PSS transparent electrode on the whole film surface;
7) Printing a low-temperature curing silver paste grid line on the PEDOT-PSS transparent electrode in parallel to the direction of the scribing line, and drying and curing to obtain a silver grid line back electrode;
8) And etching a side of each scribing position adjacent to the second laser by using a third laser, and cutting off the CdS/CdSe buffer layer, the CdS/CdSe light absorption layer and the back electrode, wherein the first laser, the second laser and the third laser are sequentially arranged in a scribing way, so that the CdTe solar cell with a plurality of battery units connected in series is obtained.
2. The method for manufacturing the double-sided power generation CdTe solar cell, according to claim 1, is characterized in that: the transparent substrate layer is one of an ultrawhite glass substrate, a tempered glass substrate and an organic glass substrate; the transparent bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
3. The method for manufacturing the double-sided power generation CdTe solar cell, according to claim 1, is characterized in that: the thickness of the CdS/CdSe buffer layer is 50-100 nm, and the thickness of the CdTe light absorption layer is 2.0-4.0 mu m; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises one of vapor transmission deposition and near space sublimation deposition.
4. The method for manufacturing the double-sided power generation CdTe solar cell, according to claim 1, is characterized in that: the activation annealing temperature is 350-600 ℃ and the time is 5-40 min.
5. The method for manufacturing the double-sided power generation CdTe solar cell, according to claim 1, is characterized in that:the PEDOT-PSS transparent electrode deposition method comprises slit coating, roller coating and chemical vapor deposition, and the conductivity is more than 600Scm -1 。
6. The method for manufacturing the double-sided power generation CdTe solar cell, according to claim 1, is characterized in that: the width of the back electrode of the silver grid line is 40-100 mu m, and the curing temperature is less than 180 ℃.
7. The method for manufacturing the double-sided power generation CdTe solar cell, according to claim 1, is characterized in that: the first laser scribing line, the second laser scribing line and the third laser scribing line have the width of 20-100 mu m, and the spacing between the edges of adjacent scribing lines in each group of scribing lines is 30-100 mu m.
8. The method for manufacturing the double-sided power generation CdTe solar cell, according to claim 1, is characterized in that: the back contact layer is made of Cu doped ZnTe and has the thickness of 20-30 nm.
9. The method for manufacturing the double-sided power generation CdTe solar cell according to any one of claims 1 to 8, wherein: a window layer is arranged between the transparent bottom electrode and the CdS/CdSe buffer layer, the window layer is an MgZnO film layer, and the thickness of the window layer is 40-70 nm.
10. A double-sided CdTe solar cell realized based on the manufacturing method of a double-sided CdTe solar cell according to any one of claims 1 to 9, characterized in that the double-sided CdTe solar cell structure comprises at least:
a transparent substrate layer; and a transparent bottom electrode, a window layer, a CdS/CdSe buffer layer, a CdTe light absorption layer, a back contact layer and a PEDOT: PSS transparent conductive layer and a silver grid line back electrode are sequentially deposited on the transparent substrate layer.
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| CN108091707A (en) * | 2017-12-13 | 2018-05-29 | 浙江海洋大学 | It is a kind of based on nanostructured it is two-sided by/fall into light monocrystaline silicon solar cell and preparation method thereof |
| CN108172640A (en) * | 2017-12-28 | 2018-06-15 | 成都中建材光电材料有限公司 | A kind of cadmium telluride diaphragm solar battery of generating electricity on two sides and preparation method thereof |
| CN111244278A (en) * | 2018-11-29 | 2020-06-05 | 中国科学院大连化学物理研究所 | Non-doped crystalline silicon heterojunction perovskite laminated solar cell structure and preparation method |
| CN111697085A (en) * | 2020-05-25 | 2020-09-22 | 中国建材国际工程集团有限公司 | Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof |
| CN112768556A (en) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | Manufacturing process of CdTe solar cell |
| CN113270506A (en) * | 2020-12-31 | 2021-08-17 | 中国建材国际工程集团有限公司 | Method for manufacturing back electrode of CdTe solar cell |
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