CN112768556A - Manufacturing process of CdTe solar cell - Google Patents
Manufacturing process of CdTe solar cell Download PDFInfo
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- CN112768556A CN112768556A CN202011645591.XA CN202011645591A CN112768556A CN 112768556 A CN112768556 A CN 112768556A CN 202011645591 A CN202011645591 A CN 202011645591A CN 112768556 A CN112768556 A CN 112768556A
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- layer
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- solar cell
- light absorption
- cdte
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000031700 light absorption Effects 0.000 claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 239000007921 spray Substances 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000011049 filling Methods 0.000 claims abstract description 3
- 239000012528 membrane Substances 0.000 claims abstract description 3
- 238000005507 spraying Methods 0.000 claims abstract description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 17
- 230000004913 activation Effects 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000005341 toughened glass Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000000859 sublimation Methods 0.000 claims description 2
- 230000008022 sublimation Effects 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002202 sandwich sublimation Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a manufacturing process of a CdTe solar cell, which is characterized in that: providing a substrate layer with a bottom electrode, and depositing a buffer layer and a light absorption layer on the bottom electrode; activating and annealing the light absorption layer; etching off the bottom electrode, the buffer layer and the light absorption layer by adopting a first laser; spraying photoresist on the scribed line of the first laser by adopting a photoresist micro-spray head array, exposing and developing by ultraviolet light in the substrate direction, and filling the scribed line; cleaning the unexposed photoresist, and cutting the buffer layer and the light absorption layer by a second laser at the position close to the scribed line of the first laser; depositing a back electrode on the whole membrane surface; and cutting the buffer layer, the light absorption layer and the back electrode by using a third laser at the position close to the scribed line of the second laser to obtain the CdTe solar cell with a plurality of cell units connected in series. According to the invention, the photoresist in the laser grooving area is accurately filled through the micro-nozzle array, so that the photoresist waste and the environmental protection pressure are reduced, the cost is obviously reduced in the process, and the yield is improved.
Description
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to a manufacturing process of a CdTe solar cell.
Background
The cadmium telluride solar cell is a thin film solar cell based on a heterojunction of p-type CdTe and n-type CdS/CdSe, and has the advantages of convenience in manufacturing, low cost, lighter weight and the like compared with a monocrystalline silicon solar cell. The production cost of the cadmium telluride thin-film solar cell is far lower than that of solar cell technologies of crystalline silicon and other materials, and secondly, the cadmium telluride thin-film solar cell is consistent with the solar spectrum and can absorb more than 95% of sunlight. In the industrial production process of CdTe solar cells in scale, a monolithic multilayer film structure needs to be cut to form a multi-cell-sheet serial structure assembly, and the P1 laser cutting units are exposed and developed through photoresist to realize the electrical insulation of a bottom electrode and a light absorption layer. The prior production line process adopts a process of coating photoresist on a whole rubber roller, curing the photoresist in a P1 laser cutting line after exposure and development, and cleaning uncured photoresist on the surface. Therefore, the development of a novel photoresist sizing process has important significance for cost reduction and efficiency improvement of a CdTe solar cell production line.
Disclosure of Invention
In view of the above disadvantages of the prior art, the present invention is directed to a CdTe solar cell manufacturing process, which solves the problems of the prior art that the photoresist is wasted and a large amount of contaminants are generated.
To achieve the above and other related objects, the present invention provides a CdTe solar cell manufacturing process, comprising the steps of:
1) providing a substrate layer with a bottom electrode, and depositing a CdS/CdSe buffer layer on the bottom electrode of the substrate layer; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing process;
2) scribing by using a first laser, cutting off the bottom electrode, the buffer layer and the light absorption layer, and dividing the whole film into a plurality of battery units;
3) spraying photoresist on the scribed line of the first laser by adopting a photoresist micro-spray head array, exposing and developing by ultraviolet light in the substrate direction, and filling the scribed line;
4) cleaning the unexposed photoresist, scribing lines beside each scribing line close to the first laser by adopting a second laser, and cutting the buffer layer and the light absorption layer;
5) depositing a back electrode on the whole membrane surface;
6) and scribing lines beside each scribing position adjacent to the second laser by using a third laser, and scribing the buffer layer, the light absorption layer and the back electrode, wherein the first laser, the second laser and the third laser are sequentially arranged to obtain the CdTe solar cell with a plurality of cell units connected in series.
Optionally, the substrate layer is an ultra-white glass substrate, a tempered glass substrate or an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
Optionally, the CdS/CdSe buffer layer is 50-100 nm thick, and the CdTe light absorption layer is 2.0-4.0 μm thick; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises vapor transmission deposition and near space sublimation deposition.
Optionally, the activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
Optionally, the width of the laser scribe line is 20-100 μm, and the edge distance between adjacent scribe lines in each group of scribe lines is 30-100 μm.
Optionally, the thickness of the back electrode layer is 220-250 nm, and the back electrode material includes molybdenum, silver, copper, and gold.
Optionally, a window layer is arranged between the transparent bottom electrode and the CdS/CdSe buffer layer, the window layer is an MgZnO film layer, and the thickness of the window layer is 40-70 nm.
Optionally, a back contact layer is deposited on the CdTe light absorption layer, the material is Cu-doped ZnTe, the thickness is 20-30 nm, and the back contact layer is cut off by laser.
As described above, the manufacturing process of the CdTe solar cell of the present invention has the following beneficial effects: the photoresist in the P1 laser grooving area is accurately filled through the micro-spray head array, the photoresist waste and the environmental protection pressure are reduced, the cost is obviously reduced in the process, and the yield is improved.
Drawings
FIG. 1 shows a process flow diagram of a fabrication process of a CdTe solar cell of the present invention.
FIGS. 2 to 7 are schematic structural views showing steps of a CdTe solar cell manufacturing process of the present invention.
Element number description:
100 substrate
200 bottom electrode
300 semiconductor heterojunction
301 CdS/CdSe buffer layers
302 CdTe light absorption layer
400 window layer
500 photo resist
600 back electrode layer
S1-S6
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
Referring to fig. 1 to 7, it should be noted that the drawings provided in the present embodiment are only schematic illustrations for explaining the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, number and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
The embodiment provides a manufacturing process of a CdTe solar cell, and the flow of the steps is shown in FIG. 1.
The specific process of the CdTe solar cell manufacturing technology is shown in the figures 2-7:
as shown in fig. 2, a substrate layer 100 with a bottom electrode 200 is provided, a window layer 400 is deposited on the bottom electrode 200 of the substrate layer 100, and a CdS/CdSe buffer layer 301 is deposited on the window layer 400; depositing a CdTe light absorption layer 302 on the CdS/CdSe buffer layer 301, and performing activation annealing treatment on the CdTe light absorption layer 302 through an activation annealing procedure. The substrate layer can be an ultra-white glass substrate, a toughened glass substrate and an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer. The window layer 400 is an MgZnO film layer, and the thickness of the window layer is 40-70 nm. The CdS/CdSe buffer layer 301 is 50-100 nm thick, and the CdTe light absorption layer 302 is 2.0-4.0 mu m thick; the deposition method of the semiconductor heterojunction layer 300 includes vapor transport deposition, close space sublimation deposition. The activation annealing temperature is 350-600 ℃, and the time is 5-40 min. A back contact layer can be further deposited on the CdTe light absorption layer 302, and the back contact layer is made of Cu-doped ZnTe and has the thickness of 20-30 nm;
as shown in fig. 3, the entire film layer is divided into a plurality of battery cells by scribing P1 using a first laser to cut the bottom electrode 200, the light absorbing layer 300, and the window layer 400; the width of the laser scribe line is 20-100 μm.
As shown in fig. 4, a photoresist micro-nozzle array is adopted to spray photoresist 500 at the first laser reticle, and the reticle is filled after ultraviolet exposure and development in the substrate direction;
as shown in fig. 5, the unexposed photoresist is cleaned and a second laser P2 is used to scribe lines next to each of the first laser scribes; etching off the CdS/CdSe buffer layer 301 and the CdTe light absorption layer 302; the width of the laser scribe line is 20-100 μm, and the distance between the laser scribe line and the edge of the adjacent P1 scribe line is 30-100 μm.
As shown in fig. 6, a back electrode 600 is deposited over the film face; the thickness of the back electrode layer is 220-250 nm, and the back electrode material comprises molybdenum, silver, copper and gold.
As shown in FIG. 7, a third laser P3 is adopted to scribe lines beside each scribing line adjacent to the second laser, so as to cut off the CdS/CdSe buffer layer 301, the CdTe light absorption layer 302 and the back electrode 600, the width of the laser scribing line is 20-100 μm, and the distance between the laser scribing line and the edge of the adjacent P2 scribing line is 30-100 μm. And the first laser, the second laser and the third laser are sequentially arrayed to obtain the CdTe solar cell with a plurality of cell units connected in series.
In conclusion, the photoresist in the P1 laser grooving area is accurately filled through the micro-nozzle array, so that the photoresist waste and the environmental protection pressure are reduced, the cost is obviously reduced in the process, and the yield is improved. Therefore, the present invention effectively overcomes the disadvantages of the prior art and has a high industrial value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A manufacturing process of a CdTe solar cell is characterized by comprising the following steps:
1) providing a substrate layer with a bottom electrode, and depositing a CdS/CdSe buffer layer on the bottom electrode of the substrate layer; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing process;
2) scribing by using a first laser, cutting off the bottom electrode, the buffer layer and the light absorption layer, and dividing the whole film into a plurality of battery units;
3) spraying photoresist on the scribed line of the first laser by adopting a photoresist micro-spray head array, exposing and developing by ultraviolet light in the substrate direction, and filling the scribed line;
4) cleaning the unexposed photoresist, scribing lines beside each scribing line close to the first laser by adopting a second laser, and cutting the buffer layer and the light absorption layer;
5) depositing a back electrode on the whole membrane surface;
6) and scribing lines beside each scribing position adjacent to the second laser by using a third laser, and scribing the buffer layer, the light absorption layer and the back electrode, wherein the first laser, the second laser and the third laser are sequentially arranged to obtain the CdTe solar cell with a plurality of cell units connected in series.
2. The manufacturing process of a CdTe solar cell according to claim 1, wherein: the substrate layer is an ultra-white glass substrate, a toughened glass substrate and an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
3. The manufacturing process of a CdTe solar cell according to claim 1, wherein: the CdS/CdSe buffer layer is 50-100 nm thick, and the CdTe light absorption layer is 2.0-4.0 mu m thick; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises vapor transmission deposition and near space sublimation deposition.
4. The manufacturing process of a CdTe solar cell according to claim 1, wherein: the activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
5. The manufacturing process of a CdTe solar cell according to claim 1, wherein: the laser scribing width is 20-100 mu m, and the edge distance between adjacent scribing lines in each group of scribing lines is 30-100 mu m.
6. The CdTe solar cell fabrication process according to claim 1, wherein: the thickness of the back electrode layer is 220-250 nm, and the back electrode material comprises molybdenum, silver, copper and gold.
7. The method for manufacturing the CdTe solar cell back electrode as defined in any one of claims 1 to 6, wherein: and a window layer is arranged between the transparent bottom electrode and the CdS/CdSe buffer layer, the window layer is an MgZnO film layer, and the thickness of the window layer is 40-70 nm.
8. The method for manufacturing the CdTe solar cell back electrode as defined in any one of claims 1 to 6, wherein: and a back contact layer is deposited on the CdTe light absorption layer, the material is Cu-doped ZnTe, the thickness is 20-30 nm, and the back contact layer is cut off by laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011645591.XA CN112768556A (en) | 2020-12-31 | 2020-12-31 | Manufacturing process of CdTe solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011645591.XA CN112768556A (en) | 2020-12-31 | 2020-12-31 | Manufacturing process of CdTe solar cell |
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| CN112768556A true CN112768556A (en) | 2021-05-07 |
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| CN202011645591.XA Pending CN112768556A (en) | 2020-12-31 | 2020-12-31 | Manufacturing process of CdTe solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114361293A (en) * | 2021-12-29 | 2022-04-15 | 中国建材国际工程集团有限公司 | Double-sided power generation CdTe solar cell and manufacturing method thereof |
| CN114388655A (en) * | 2021-12-29 | 2022-04-22 | 中国建材国际工程集团有限公司 | Passivated CdTe solar cell and manufacturing method thereof |
| CN115064608A (en) * | 2022-07-05 | 2022-09-16 | 中国建材国际工程集团有限公司 | CdTe solar cell module and manufacturing method thereof |
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| US20030029848A1 (en) * | 2001-08-10 | 2003-02-13 | Borgeson Frank A. | Method and apparatus for laser scribing glass sheet substrate coatings |
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| CN102386274A (en) * | 2010-08-27 | 2012-03-21 | 初星太阳能公司 | Methods of forming an anisotropic conductive layer as a back contact in thin film photovoltaic devices |
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2020
- 2020-12-31 CN CN202011645591.XA patent/CN112768556A/en active Pending
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| US20030029848A1 (en) * | 2001-08-10 | 2003-02-13 | Borgeson Frank A. | Method and apparatus for laser scribing glass sheet substrate coatings |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114361293A (en) * | 2021-12-29 | 2022-04-15 | 中国建材国际工程集团有限公司 | Double-sided power generation CdTe solar cell and manufacturing method thereof |
| CN114388655A (en) * | 2021-12-29 | 2022-04-22 | 中国建材国际工程集团有限公司 | Passivated CdTe solar cell and manufacturing method thereof |
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| CN114388655B (en) * | 2021-12-29 | 2024-01-30 | 中国建材国际工程集团有限公司 | Passivating CdTe solar cell and manufacturing method thereof |
| CN115064608A (en) * | 2022-07-05 | 2022-09-16 | 中国建材国际工程集团有限公司 | CdTe solar cell module and manufacturing method thereof |
| CN115064608B (en) * | 2022-07-05 | 2024-04-09 | 中国建材国际工程集团有限公司 | CdTe solar cell module and manufacturing method thereof |
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