CN115064608A - CdTe solar cell module and manufacturing method thereof - Google Patents
CdTe solar cell module and manufacturing method thereof Download PDFInfo
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- CN115064608A CN115064608A CN202210791470.9A CN202210791470A CN115064608A CN 115064608 A CN115064608 A CN 115064608A CN 202210791470 A CN202210791470 A CN 202210791470A CN 115064608 A CN115064608 A CN 115064608A
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000004080 punching Methods 0.000 claims abstract description 13
- 238000011049 filling Methods 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 claims description 33
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 20
- 230000031700 light absorption Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 230000004913 activation Effects 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 238000005553 drilling Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000004804 winding Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000001723 curing Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000013035 low temperature curing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 238000000859 sublimation Methods 0.000 claims description 3
- 230000008022 sublimation Effects 0.000 claims description 3
- 239000005341 toughened glass Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000003698 laser cutting Methods 0.000 abstract description 3
- 230000000007 visual effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
Compared with the traditional large-area CdTe solar cell, the CdTe solar cell provided by the invention adopts a laser cutting and punching matched process to divide cell units, and utilizes filling and punching to realize modularized series connection among the cells, and all light receiving surfaces lose parts removed by laser scribing or punching, so that the width of dead zones of scribed lines and the light receiving surfaces is reduced, and the severe visual grabbing is not required to control the width of the dead zones when the laser process is used.
Description
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to a CdTe solar cell module and a manufacturing method thereof.
Background
The thin film solar cell has the advantages of low cost, weak light effect and the like, and occupies a seat in the field of solar cells, and the thin film solar cell is developed rapidly in recent years. The cadmium telluride solar cell is a thin film solar cell based on a heterojunction of p-type CdTe and n-type CdS/CdSe, and has the advantages of convenience in manufacturing, low cost, lighter weight and the like compared with a monocrystalline silicon solar cell. The absorption spectrum of cadmium telluride is consistent with the solar spectrum, and can absorb more than 95% of sunlight.
The traditional large-area CdTe solar cell is in a serial assembly structure formed by three dense laser scribes in each group, and active materials among the three laser scribes in the same group have no power generation function, so that a dead zone is formed. Therefore, an expensive vision grasping system is required to tightly control the width and spacing of the laser scribe lines, and reducing the "dead zone" width is an important factor in improving the efficiency of the assembly.
Therefore, it is an object to be solved by those skilled in the art to provide a novel CdTe solar cell module and a method for manufacturing the same.
Disclosure of Invention
In view of the above disadvantages of the prior art, the present invention is directed to a CdTe solar cell module and a method for manufacturing the same, which is used to solve the problem of the prior art that the number of laser cuts is large, resulting in a wide light receiving surface "dead space".
To achieve the above and other related objects, the present invention provides a method for manufacturing a CdTe solar cell module, the method at least comprising:
1) providing a transparent substrate layer with a transparent bottom electrode, and sputtering a window layer on the transparent bottom electrode;
2) depositing a CdS/CdSe buffer layer on the window layer; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing process;
3) depositing a back contact layer on the CdTe light absorption layer;
4) cutting off the bottom electrode, the window layer, the CdS/CdSe buffer layer, the CdTe light absorption layer and the back contact layer by adopting a laser scribing process, and dividing the whole film layer into a plurality of battery units;
5) coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling the reticle;
6) designing a perforated winding area and a back electrode area on a film surface, printing an insulating glue pattern in the perforated winding area, curing the insulating glue pattern, then performing laser drilling in the insulating glue pattern area, and punching through the bottom electrode, the window layer, the CdS/CdSe buffer layer, the CdTe light absorption layer and the back contact layer;
7) printing low-temperature cured conductive paste grid lines in the insulating glue pattern area and the back electrode area; the conductive paste grid lines printed in the insulating glue pattern area and the back electrode area on the same battery unit are mutually insulated, the conductive paste grid line of the insulating glue pattern area on any battery unit is electrically connected with the conductive paste grid line of the back electrode area of the adjacent battery unit, and a plurality of battery units form a series connection structure after solidification; and the printing width of the grid line of the conductive paste in the insulating paste pattern area is smaller than that of the insulating paste pattern, and the conductive paste is filled into the laser-drilled hole and is electrically connected with the bottom electrode.
Optionally, the substrate layer is an ultra-white glass substrate, a tempered glass substrate or an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
Optionally, the CdS/CdSe buffer layer is 50-100 nm thick, and the CdTe light absorption layer is 2.0-4.0 μm thick; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises vapor transmission deposition and near space sublimation deposition.
Optionally, the activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
Optionally, the width of the laser scribing line is 20-100 μm, and the aperture of the laser drilling hole is 50-200 μm.
Optionally, the material of the insulating glue pattern includes one of epoxy insulating glue, acrylic insulating glue, polyurethane insulating glue, PI insulating glue, and insulating silica gel; the low-temperature curing conductive paste is one of conductive silver paste, conductive copper paste, conductive nickel paste, conductive silver-clad copper paste, conductive silver-clad nickel paste and conductive gold paste.
Optionally, the window layer is MgZnO or SnO 2 The thickness is 40-70 nm.
Optionally, the back contact layer is made of Cu-doped ZnTe and has a thickness of 20-30 nm.
The invention also provides a CdTe solar cell module manufactured by the manufacturing method of the CdTe solar cell module.
As described above, the CdTe solar cell module and the method for manufacturing the same according to the present invention have the following advantageous effects:
compared with the traditional large-area CdTe solar cell, the CdTe solar cell provided by the invention adopts a process of matching laser cutting with punching to divide cell units, and utilizes filling punching to realize modularized series connection among the cells, so that all light receiving surfaces lose parts from laser scribing and punching removal, and dead zones of active substances among multiple laser scribing in the same group are avoided. In the aspect of manufacturing process, the scribing and punching process does not need harsh visual grasping to control scribing precision and dead zone width, greatly reduces equipment cost, reduces process difficulty and can effectively ensure yield.
Drawings
FIGS. 1 to 9 are schematic structural views presented at various steps of the method for manufacturing CdTe solar cell modules of the invention. Wherein, fig. 8 to 9 are schematic structural views of CdTe solar cell modules.
Description of the element reference
1 substrate layer
2 bottom electrode
3 Window layer
4 CdS/CdSe buffer layers
5 CdTe light absorption layer
6 back contact layer
7 Photoresist
8 insulating glue pattern
9 holes, cavities
101. 102 conductive paste grid line
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to the attached drawings. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The embodiment provides a manufacturing method of a CdTe solar cell module, the specific process of the manufacturing method is shown in fig. 1 to 9, and the manufacturing method at least comprises the following steps:
as shown in fig. 1, a transparent substrate layer 1 with a transparent bottom electrode 2 is provided, on which transparent bottom electrode 2 a window layer 3 is sputtered. The substrate layer 1 is an ultra-white glass substrate, a toughened glass substrate and an organic glass substrate; the bottom electrode 2 is made of ITO conductive film layer, FTO conductive film layer and AZO conductive film layerOne kind of the medicine. The window layer 3 is MgZnO or SnO 2 The thickness is 40-70 nm.
As shown in fig. 2, a CdS/CdSe buffer layer 4 is deposited on the window layer 3; depositing a CdTe light absorption layer 5 on the CdS/CdSe buffer layer 4, and performing activation annealing treatment on the CdTe light absorption layer 5 through an activation annealing procedure. The CdS/CdSe buffer layer 4 is 50-100 nm thick, and the CdTe light absorption layer 5 is 2.0-4.0 mu m thick; the deposition method of the CdS/CdSe buffer layer 4 and the CdTe light absorption layer 5 comprises vapor transmission deposition and near space sublimation deposition. The activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
As shown in fig. 3, a back contact layer 6 is deposited on the CdTe light absorbing layer 5. The back contact layer 6 is made of Cu-doped ZnTe and has the thickness of 20-30 nm.
As shown in fig. 4, the bottom electrode 2, the window layer 3, the CdS/CdSe buffer layer 4, the CdTe light absorption layer 5, and the back contact layer 6 are cut by a laser scribing process (scribing position of P1), so that the entire film layer is divided into a plurality of cells. The width of the laser scribing line is 20-100 mu m.
As shown in fig. 5, photoresist 7 is applied and developed by uv exposure in the substrate direction to fill reticle P1.
As shown in fig. 6 to 7, a perforated winding area and a back electrode area are designed on the film surface, an insulating paste pattern 8 is printed on the perforated winding area, and laser drilling 9 (P) is performed on the insulating paste pattern area after the insulating paste pattern 8 is cured h A punch position) to punch through the bottom electrode 2, the window layer 3, the CdS/CdSe buffer layer 4, the CdTe light absorbing layer 5, and the back contact layer 6. The aperture of the laser drilling 9 is 50-200 mu m.
Fig. 7 is a top view of fig. 6 to more clearly show the component structure. It should be noted that the number of the laser holes 9 is not limited, and for convenience of illustration, only two holes 9 are shown on each insulating glue pattern 8 in fig. 7. The number of the insulating adhesive patterns 8 on each battery cell is greater than or equal to one, and the insulating adhesive patterns 8 are parallel to each other, and three parallel insulating adhesive patterns 8 are shown in fig. 7. For process reasons, each of the insulation paste patterns 8 may protrude a little beyond the photoresist 7 scribe line to an adjacent cell.
As an example, the material of the insulating glue pattern 8 includes one of epoxy insulating glue, acrylic insulating glue, polyurethane insulating glue, PI insulating glue, and insulating silicon glue.
As shown in fig. 8 to 9, grid lines 101 and 102 of low-temperature cured conductive paste are printed in the insulating paste pattern region and the back electrode region; the conductive paste grid lines 101 in the insulating glue pattern area and the conductive paste grid lines 102 printed in the back electrode area on the same battery unit are mutually insulated, the conductive paste grid lines 101 in the insulating glue pattern area on any battery unit are electrically connected with the conductive paste grid lines 102 in the back electrode area of the adjacent battery unit, and a plurality of battery units form a series connection structure after curing; wherein the printing width of the conductive paste grid line 101 in the insulating paste pattern area is smaller than that of the insulating paste pattern 8, and the conductive paste is filled into the laser-drilled hole 9 (i.e. P) h A hole in place) that forms an electrical connection with the bottom electrode 2. The low temperature cured conductive paste grid lines 101, 102 are actually complete grid lines formed by one printing, and only position indication distinction is made here.
Fig. 9 is a top view of fig. 8 to more clearly show the component structure.
The low-temperature curing conductive paste is one of conductive silver paste, conductive copper paste, conductive nickel paste, conductive silver-clad copper paste, conductive silver-clad nickel paste and conductive gold paste.
By designing perforated areas on the membrane surface and printing an insulating glue, using passage P h And filling metal slurry into the holes of the laser drilling 9, leading out the bottom electrode, electrically connecting the bottom electrode with the top electrodes of the adjacent units, and insulating the bottom electrode from the top electrodes of the same units to form a continuous series assembly structure, so that dead zones of active substances among multiple laser scribing lines in the same group are avoided.
The embodiment also provides a CdTe solar cell module manufactured by the manufacturing method of the CdTe solar cell module.
In summary, the CdTe solar cell module and the manufacturing method thereof provided by the invention have the advantages that compared with the traditional large-area CdTe solar cell, the CdTe solar cell module adopts the process of matching laser cutting and punching to divide the cell units, the modularized series connection among the cells is realized by filling and punching, all light receiving surfaces lose parts from laser scribing and punching removal, and the dead zone of active materials among multiple laser scribing in the same group is avoided. In the aspect of manufacturing process, the scribing and punching process does not need harsh visual grasping to control scribing precision and dead zone width, greatly reduces equipment cost, reduces process difficulty and can effectively ensure yield.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A method for manufacturing a CdTe solar cell module, characterized in that it comprises at least:
1) providing a transparent substrate layer with a transparent bottom electrode, and sputtering a window layer on the transparent bottom electrode;
2) depositing a CdS/CdSe buffer layer on the window layer; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing process;
3) depositing a back contact layer on the CdTe light absorption layer;
4) cutting off the bottom electrode, the window layer, the CdS/CdSe buffer layer, the CdTe light absorption layer and the back contact layer by adopting a laser scribing process, and dividing the whole film layer into a plurality of battery units;
5) coating photoresist, exposing and developing through ultraviolet light in the direction of the substrate, and filling reticle;
6) designing a perforated winding area and a back electrode area on a film surface, printing an insulating glue pattern in the perforated winding area, curing the insulating glue pattern, then performing laser drilling in the insulating glue pattern area, and punching through the bottom electrode, the window layer, the CdS/CdSe buffer layer, the CdTe light absorption layer and the back contact layer;
7) printing low-temperature cured conductive paste grid lines in the area of the insulating glue pattern and the back electrode area; the conductive paste grid lines printed in the insulating glue pattern area and the back electrode area on the same battery unit are mutually insulated, the conductive paste grid line of the insulating glue pattern area on any battery unit is electrically connected with the conductive paste grid line of the back electrode area of the adjacent battery unit, and a plurality of battery units form a series connection structure after solidification; and the printing width of the grid line of the conductive paste in the insulating paste pattern area is smaller than that of the insulating paste pattern, and the conductive paste is filled into the laser-drilled hole and is electrically connected with the bottom electrode.
2. The method for manufacturing a CdTe solar cell module according to claim 1, characterized in that: the substrate layer is an ultra-white glass substrate, a toughened glass substrate and an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
3. The method for manufacturing a CdTe solar cell module according to claim 1, characterized in that: the CdS/CdSe buffer layer is 50-100 nm thick, and the CdTe light absorption layer is 2.0-4.0 mu m thick; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises vapor transmission deposition and near space sublimation deposition.
4. The method for manufacturing a CdTe solar cell module according to claim 1, characterized in that: the activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
5. The method for manufacturing a CdTe solar cell module according to claim 1, characterized in that: the width of the laser scribing line is 20-100 mu m, and the aperture of the laser drilling is 50-200 mu m.
6. The method for manufacturing a CdTe solar cell module according to claim 1, characterized in that: the material of the insulating glue pattern comprises one of epoxy insulating glue, acrylic insulating glue, polyurethane insulating glue, PI insulating glue and insulating silica gel; the low-temperature curing conductive paste is one of conductive silver paste, conductive copper paste, conductive nickel paste, conductive silver-clad copper paste, conductive silver-clad nickel paste and conductive gold paste.
7. The method for manufacturing a CdTe solar cell module according to claim 1, characterized in that: the window layer is MgZnO or SnO 2 The thickness is 40-70 nm.
8. The method for manufacturing a CdTe solar cell module according to claim 1, characterized in that: the back contact layer is made of Cu-doped ZnTe and has the thickness of 20-30 nm.
9. A CdTe solar cell module manufactured by the method for manufacturing a CdTe solar cell module according to any one of claims 1 to 8.
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| CN202210791470.9A CN115064608B (en) | 2022-07-05 | 2022-07-05 | CdTe solar cell module and manufacturing method thereof |
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| CN202210791470.9A CN115064608B (en) | 2022-07-05 | 2022-07-05 | CdTe solar cell module and manufacturing method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598188A (en) * | 2018-05-08 | 2018-09-28 | 英利能源（中国）有限公司 | The preparation method and solar cell of N-type back contact solar cell |
| CN112768557A (en) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | Method for manufacturing CdTe solar cell |
| CN112768556A (en) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | Manufacturing process of CdTe solar cell |
| CN113270506A (en) * | 2020-12-31 | 2021-08-17 | 中国建材国际工程集团有限公司 | Method for manufacturing back electrode of CdTe solar cell |
| CN113594300A (en) * | 2021-07-29 | 2021-11-02 | 成都中建材光电材料有限公司 | Laser scribing method for light-transmitting power generation glass |
| WO2021243896A1 (en) * | 2020-06-05 | 2021-12-09 | 中国建材国际工程集团有限公司 | High-efficiency cadmium telluride thin-film solar cell and preparation method therefor |
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| CN108598188A (en) * | 2018-05-08 | 2018-09-28 | 英利能源（中国）有限公司 | The preparation method and solar cell of N-type back contact solar cell |
| WO2021243896A1 (en) * | 2020-06-05 | 2021-12-09 | 中国建材国际工程集团有限公司 | High-efficiency cadmium telluride thin-film solar cell and preparation method therefor |
| CN112768557A (en) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | Method for manufacturing CdTe solar cell |
| CN112768556A (en) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | Manufacturing process of CdTe solar cell |
| CN113270506A (en) * | 2020-12-31 | 2021-08-17 | 中国建材国际工程集团有限公司 | Method for manufacturing back electrode of CdTe solar cell |
| CN113594300A (en) * | 2021-07-29 | 2021-11-02 | 成都中建材光电材料有限公司 | Laser scribing method for light-transmitting power generation glass |
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