CN115064608B - CdTe solar cell module and manufacturing method thereof - Google Patents
CdTe solar cell module and manufacturing method thereof Download PDFInfo
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- CN115064608B CN115064608B CN202210791470.9A CN202210791470A CN115064608B CN 115064608 B CN115064608 B CN 115064608B CN 202210791470 A CN202210791470 A CN 202210791470A CN 115064608 B CN115064608 B CN 115064608B
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000011049 filling Methods 0.000 claims abstract description 5
- 239000003292 glue Substances 0.000 claims description 25
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 230000031700 light absorption Effects 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 230000004913 activation Effects 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000004804 winding Methods 0.000 claims description 6
- 238000013035 low temperature curing Methods 0.000 claims description 5
- 238000005553 drilling Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 238000000859 sublimation Methods 0.000 claims description 3
- 230000008022 sublimation Effects 0.000 claims description 3
- 239000005341 toughened glass Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000004080 punching Methods 0.000 abstract description 13
- 238000003698 laser cutting Methods 0.000 abstract description 4
- 230000000007 visual effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 12
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000032823 cell division Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Compared with the traditional large-area CdTe solar cell, the CdTe solar cell provided by the invention adopts a process of matching laser cutting and punching to divide cell units, and realizes modular serial connection among the cells by using filling punching, and all light receiving surfaces lose parts removed by laser scribing or punching, so that the width of a dead zone of a scribing line and the light receiving surface is reduced, and the width of the dead zone is controlled by using a laser process without harsh visual capture.
Description
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to a CdTe solar cell module and a manufacturing method thereof.
Background
Thin film solar cells have been developed rapidly in recent years because of their low cost and low light effect. The cadmium telluride solar cell is a thin film solar cell based on the heterojunction of p-type CdTe and n-type CdS/CdSe, and has the advantages of convenience in manufacturing, low cost, lighter weight and the like compared with a monocrystalline silicon solar cell. The absorption spectrum of cadmium telluride is consistent with the solar spectrum, and can absorb more than 95% of sunlight.
The traditional large-area CdTe solar cell forms a serial component structure through each group of three dense laser scribing lines, and active materials among the same group of three laser scribing lines have no power generation function, so that a dead zone is formed. Therefore, an expensive vision grasping system is required to strictly control the width and pitch of the laser scribe lines, and reducing the "dead zone" width is an important factor in improving the efficiency of the assembly.
Accordingly, it is a matter of the present invention that a person skilled in the art needs to solve to provide a novel CdTe solar cell module and a method for manufacturing the same.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a CdTe solar cell module and a manufacturing method thereof, which are used for solving the problem that the laser cutting times in the prior art are large, resulting in a wide "dead zone" of the light receiving surface.
To achieve the above and other related objects, the present invention provides a method for manufacturing a CdTe solar cell module, the method at least comprising:
1) Providing a transparent substrate layer with a transparent bottom electrode, and sputtering a window layer on the transparent bottom electrode;
2) Depositing a CdS/CdSe buffer layer on the window layer; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing procedure;
3) Depositing a back contact layer on the CdTe light absorption layer;
4) A laser scribing process is adopted to cut off the bottom electrode, the window layer, the CdS/CdSe buffer layer, the CdTe light absorption layer and the back contact layer, and the whole film layer is divided into a plurality of battery units;
5) Coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling a scribing line;
6) Designing a perforation winding area and a back electrode area on the film surface, printing an insulating adhesive pattern on the perforation winding area, and carrying out laser drilling on the insulating adhesive pattern area after the insulating adhesive pattern is solidified to punch through the bottom electrode, the window layer, the CdS/CdSe buffer layer, the CdTe light absorption layer and the back contact layer;
7) Printing a low-temperature curing conductive paste grid line in the insulating glue pattern area and the back electrode area; the conductive paste grid lines printed on the insulating glue pattern area and the back electrode area on the same battery unit are mutually insulated, the conductive paste grid line of the insulating glue pattern area on any battery unit is electrically connected with the conductive paste grid lines of the back electrode area of the adjacent battery unit, and after solidification, a plurality of battery units form a series structure; the printing width of the conductive paste grid line of the insulating glue pattern area is smaller than that of the insulating glue pattern, and the conductive paste is filled in the holes perforated by the laser and is electrically connected with the bottom electrode.
Optionally, the substrate layer is an ultrawhite glass substrate, a tempered glass substrate and an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
Optionally, the thickness of the CdS/CdSe buffer layer is 50-100 nm, and the thickness of the CdTe light absorption layer is 2.0-4.0 mu m; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises vapor transmission deposition and near space sublimation deposition.
Optionally, the activation annealing temperature is 350-600 ℃ and the time is 5-40 min.
Optionally, the laser scribing width is 20-100 μm, and the laser drilling aperture is 50-200 μm.
Optionally, the material of the insulating glue pattern comprises one of epoxy insulating glue, acrylic insulating glue, polyurethane insulating glue, PI insulating glue and insulating silica gel; the low-temperature curing conductive paste is one of conductive silver paste, conductive copper paste, conductive nickel paste, conductive silver-coated copper paste, conductive silver-coated nickel paste and conductive gold paste.
Optionally, the window layer is MgZnO or SnO 2 The thickness is 40-70 nm.
Optionally, the back contact layer is made of Cu doped ZnTe, and the thickness is 20-30 nm.
The invention also provides the CdTe solar cell module manufactured by the manufacturing method of the CdTe solar cell module.
As described above, the CdTe solar cell module and the method for manufacturing the same of the present invention have the following advantageous effects:
compared with the traditional large-area CdTe solar cell, the CdTe solar cell adopts the process of matching laser cutting and punching to divide the cell units, and realizes modular serial connection among the cells by using filling punching, all light receiving surface losses come from the parts removed by laser scribing and punching, so that the dead zone of active substances among the same group of multiple laser scribing is avoided. In the aspect of the manufacturing process, the scribing and punching processes do not need to control the scribing precision and the dead zone width through harsh visual grabbing, so that the equipment cost is greatly reduced, the process difficulty is reduced, and the yield can be effectively ensured.
Drawings
Fig. 1 to 9 are schematic structural views showing respective steps of a method for manufacturing a CdTe solar cell module according to the present invention. Fig. 8 to 9 are schematic structural diagrams of CdTe solar cell modules.
Description of element reference numerals
1. Substrate layer
2. Bottom electrode
3. Window layer
4 CdS/CdSe buffer layer
5 CdTe light absorbing layer
6. Back contact layer
7. Photoresist
8. Insulating adhesive pattern
9. Holes, apertures
101. 102 conductive paste grid line
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to the accompanying drawings. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
The embodiment provides a method for manufacturing a CdTe solar cell module, the specific process of the manufacturing method is shown in fig. 1 to 9, and the manufacturing method at least comprises the following steps:
as shown in fig. 1, a transparent substrate layer 1 with a transparent bottom electrode 2 is provided, and a window layer 3 is sputtered on said transparent bottom electrode 2. The substrate layer 1 is an ultrawhite glass substrate, a tempered glass substrate and an organic glass substrate; the material of the bottom electrode 2 is one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer. The window layer 3 is MgZnO or SnO 2 The thickness is 40-70 nm.
As shown in fig. 2, a CdS/CdSe buffer layer 4 is deposited on the window layer 3; and depositing a CdTe light absorption layer 5 on the CdS/CdSe buffer layer 4, and performing activation annealing treatment on the CdTe light absorption layer 5 through an activation annealing procedure. The thickness of the CdS/CdSe buffer layer 4 is 50-100 nm, and the thickness of the CdTe light absorption layer 5 is 2.0-4.0 mu m; the deposition method of the CdS/CdSe buffer layer 4 and the CdTe light absorbing layer 5 comprises vapor transport deposition and near space sublimation deposition. The activation annealing temperature is 350-600 ℃ and the time is 5-40 min.
As shown in fig. 3, a back contact layer 6 is deposited on the CdTe light absorbing layer 5. The back contact layer 6 is made of Cu doped ZnTe and has the thickness of 20-30 nm.
As shown in fig. 4, the bottom electrode 2, the window layer 3, the CdS/CdSe buffer layer 4, the CdTe light absorbing layer 5, and the back contact layer 6 are cut by a laser scribing process (P1 scribing position), and the entire film layer is divided into a plurality of battery cells. The width of the laser scribing line is 20-100 mu m.
As shown in fig. 5, a resist 7 is applied, and the resist line P1 is filled by ultraviolet light exposure development in the substrate direction.
As shown in fig. 6 to 7, a perforated winding region and a back electrode region are designed on the film surface, an insulating adhesive pattern 8 is printed on the perforated winding region, and after the insulating adhesive pattern 8 is cured, a laser hole 9 (P h Punching positions), and punching through the bottom electrode 2, the window layer 3, the CdS/CdSe buffer layer 4, the CdTe light absorption layer 5 and the back contact layer 6. The aperture of the laser perforation 9 is 50-200 mu m.
To more clearly show the assembly structure, fig. 7 is shown as a top view of fig. 6. It should be noted that the number of the laser holes 9 is not limited, and only two holes 9 are shown on each insulating glue pattern 8 in fig. 7 for convenience of illustration. The insulating paste patterns 8 on each battery cell are one or more and parallel to each other, and three insulating paste patterns 8 parallel to each other are shown in fig. 7. For process reasons, each insulating glue pattern 8 will extend a bit beyond the scribe line of the photoresist 7 to an adjacent cell.
As an example, the material of the insulating paste pattern 8 includes one of epoxy insulating paste, acrylic insulating paste, polyurethane insulating paste, PI insulating paste, and insulating silicone paste.
As shown in fig. 8 to 9, low-temperature cured conductive paste gate lines 101 and 102 are printed on the insulating paste pattern region and the back electrode region; the conductive paste grid line 101 of the insulating glue pattern area and the conductive paste grid line 102 printed on the back electrode area on the same battery unit are mutually insulated, the conductive paste grid line 101 of the insulating glue pattern area on any battery unit is electrically connected with the conductive paste grid line 102 of the back electrode area of the adjacent battery unit, and after solidification, a plurality of battery units form a series structure; wherein the printing width of the conductive paste gate line 101 in the insulating paste pattern region is smaller than the printing width of the insulating paste pattern 8, and the conductive paste is filled into the laser-drilled holes 9 (i.e.P h A hole in the location) is electrically connected to the bottom electrode 2. The low temperature cured conductive paste gate lines 101 and 102 are actually complete gate lines formed by one-time printing, and only position indication distinction is made.
To more clearly show the assembly structure, fig. 9 is shown as a top view of fig. 8.
The low-temperature curing conductive paste is one of conductive silver paste, conductive copper paste, conductive nickel paste, conductive silver-coated copper paste, conductive silver-coated nickel paste and conductive gold paste.
By designing perforated areas on the film surface and printing insulating glue, the P-type film is used h The holes of the laser holes 9 are filled with metal slurry, the bottom electrode is led out to be electrically connected with the top electrode of the adjacent unit and is insulated with the top electrode of the unit, so that a continuous series assembly structure is formed, and a dead zone of active substances among the same group of multiple laser scribing lines is avoided.
The embodiment also provides the CdTe solar cell module manufactured by the manufacturing method of the CdTe solar cell module.
In summary, the present invention provides a CdTe solar cell module and a method for manufacturing the same, compared with the conventional large-area CdTe solar cell module, the CdTe solar cell module of the present invention performs cell division by using a process of matching laser cutting and punching, and realizes modular serial connection between cells by using filling punching, all light receiving surface losses come from laser scribing and punching removed portions, so that a dead zone of active materials between the same group of multiple laser scribing is avoided. In the aspect of the manufacturing process, the scribing and punching processes do not need to control the scribing precision and the dead zone width through harsh visual grabbing, so that the equipment cost is greatly reduced, the process difficulty is reduced, and the yield can be effectively ensured.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. A method of manufacturing a CdTe solar cell module, the method comprising at least:
providing a transparent substrate layer with a transparent bottom electrode, and sputtering a window layer on the transparent bottom electrode;
depositing a CdS/CdSe buffer layer on the window layer; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing procedure;
depositing a back contact layer on the CdTe light absorption layer;
a laser scribing process is adopted to scribe the bottom electrode, the window layer, the CdS/CdSe buffer layer, the CdTe light absorption layer and the back contact layer to form laser scribing, the whole film layer is divided into a plurality of battery units, and the number of the laser scribing arranged between the adjacent battery units is one;
coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling a scribing line;
designing a perforation winding area and a back electrode area on the film surface, printing an insulating adhesive pattern on the perforation winding area, and carrying out laser drilling on the insulating adhesive pattern area after the insulating adhesive pattern is solidified to punch through the bottom electrode, the window layer, the CdS/CdSe buffer layer, the CdTe light absorption layer and the back contact layer;
printing a low-temperature curing conductive paste grid line in the area of the insulating glue pattern and the back electrode area; the conductive paste grid lines printed on the insulating glue pattern area and the back electrode area on the same battery unit are mutually insulated, the conductive paste grid line of the insulating glue pattern area on any battery unit is electrically connected with the conductive paste grid lines of the back electrode area of the adjacent battery unit, and after solidification, a plurality of battery units form a series structure; the printing width of the conductive paste grid line of the insulating glue pattern area is smaller than that of the insulating glue pattern, and the conductive paste is filled in the holes perforated by the laser and is electrically connected with the bottom electrode.
2. The method of manufacturing a CdTe solar cell module of claim 1, wherein: the substrate layer is an ultrawhite glass substrate, a tempered glass substrate and an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
3. The method of manufacturing a CdTe solar cell module of claim 1, wherein: the thickness of the CdS/CdSe buffer layer is 50-100 nm, and the thickness of the CdTe light absorption layer is 2.0-4.0 mu m; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises vapor transmission deposition and near space sublimation deposition.
4. The method of manufacturing a CdTe solar cell module of claim 1, wherein: the activation annealing temperature is 350-600 ℃ and the time is 5-40 min.
5. The method of manufacturing a CdTe solar cell module of claim 1, wherein: the width of the laser scribing line is 20-100 mu m, and the aperture of the laser drilling line is 50-200 mu m.
6. The method of manufacturing a CdTe solar cell module of claim 1, wherein: the material of the insulating glue pattern comprises one of epoxy insulating glue, acrylic insulating glue, polyurethane insulating glue, PI insulating glue and insulating silica gel; the low-temperature curing conductive paste is one of conductive silver paste, conductive copper paste, conductive nickel paste, conductive silver-coated copper paste, conductive silver-coated nickel paste and conductive gold paste.
7. The method of manufacturing a CdTe solar cell module of claim 1, wherein: the window layer is MgZnO or SnO 2 The thickness is 40-70 nm.
8. The method of manufacturing a CdTe solar cell module of claim 1, wherein: the back contact layer is made of Cu doped ZnTe, and the thickness is 20-30 nm.
9. A CdTe solar cell module produced by the method of producing a CdTe solar cell module according to any one of claims 1 to 8.
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| CN202210791470.9A CN115064608B (en) | 2022-07-05 | 2022-07-05 | CdTe solar cell module and manufacturing method thereof |
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| CN108598188A (en) * | 2018-05-08 | 2018-09-28 | 英利能源（中国）有限公司 | The preparation method and solar cell of N-type back contact solar cell |
| WO2021243896A1 (en) * | 2020-06-05 | 2021-12-09 | 中国建材国际工程集团有限公司 | High-efficiency cadmium telluride thin-film solar cell and preparation method therefor |
| CN112768556A (en) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | Manufacturing process of CdTe solar cell |
| CN112768557A (en) * | 2020-12-31 | 2021-05-07 | 中国建材国际工程集团有限公司 | Method for manufacturing CdTe solar cell |
| CN113270506A (en) * | 2020-12-31 | 2021-08-17 | 中国建材国际工程集团有限公司 | Method for manufacturing back electrode of CdTe solar cell |
| CN113594300A (en) * | 2021-07-29 | 2021-11-02 | 成都中建材光电材料有限公司 | Laser scribing method for light-transmitting power generation glass |
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