CN114388655B - Passivating CdTe solar cell and manufacturing method thereof - Google Patents

Passivating CdTe solar cell and manufacturing method thereof Download PDF

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Publication number
CN114388655B
CN114388655B CN202111641419.1A CN202111641419A CN114388655B CN 114388655 B CN114388655 B CN 114388655B CN 202111641419 A CN202111641419 A CN 202111641419A CN 114388655 B CN114388655 B CN 114388655B
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layer
cdte
solar cell
laser
passivated
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CN114388655A (en
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彭寿
马立云
汪元元
殷新建
吴一民
陈瑛
储静远
盖琳琳
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China Triumph International Engineering Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a passivated CdTe solar cell and a manufacturing method thereof, mgZnO or SnO with a non-flat convex structure is adopted between TCO and a buffer layer 2 The window layer, protruding form structure can play passivation and promote the effect of opening the pressure, can also play the light trapping effect simultaneously, promotes light absorption and generating efficiency.

Description

Passivating CdTe solar cell and manufacturing method thereof
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to a passivated CdTe solar cell and a manufacturing method thereof.
Background
The theoretical photoelectric conversion efficiency of the cadmium telluride (CdTe) solar cell is up to 28%, and the CdTe solar cell has the advantages of convenience in manufacturing, light weight, low manufacturing cost, excellent photoelectric performance and the like, and has a wide development space. CdTe solar cells are based on the heterojunction of p-type CdTe and n-type CdS/CdSe and can absorb more than 95% of sunlight. A typical CdTe solar cell includes: the light-transmitting support substrate mainly plays roles of supporting a CdTe solar cell, preventing pollution and entering sunlight; the transparent conductive oxide layer mainly plays roles of light transmission and conductivity; a CdS/CdSe buffer layer providing an n-type semiconductor; the CdTe absorbing layer is used as a main light absorbing layer and forms a p-n junction with the n-type CdS window layer; and the back contact layer and the back electrode draw current. The efficiency optimization of the CdTe solar cell requires passivation to reduce carrier recombination so as to improve open voltage, reduce series resistance and improve short-circuit current, and the structural design obtains good light absorption, so that the development of a passivation CdTe solar cell structure for improving light absorption is necessary.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a passivated CdTe solar cell and a manufacturing method thereof, which are used for solving the problem of optimizing the light trapping structure of the thin film solar cell in the prior art.
To achieve the above and other related objects, the present invention provides a method for manufacturing a passivated CdTe solar cell, comprising the steps of:
1) Providing a transparent substrate layer with a transparent bottom electrode, sputtering a window layer material on the transparent bottom electrode through a mask, wherein the mask is a mask plate with uniform and dense small holes, the diameter of the small holes is 1-10 mu m, and the distance between the small holes is 1-10 mu m so as to form uniform and dense window layer material bulges on the transparent bottom electrode;
2) Depositing a CdS/CdSe buffer layer on the transparent bottom electrode with the uniform and dense window layer material bulges; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing procedure;
3) A back contact layer is deposited on the CdTe light absorption layer;
4) Dividing the whole film layer into a plurality of battery units by adopting a first laser scribing line to cut off the transparent bottom electrode, the window layer, the buffer layer and the light absorption layer;
5) Coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling a scribing line;
6) Cleaning the unexposed photoresist, and etching a window layer, a buffer layer and a light absorption layer by using a second laser to etch a line beside each of the positions close to the first laser;
7) Depositing a back electrode on the whole film surface;
8) And a third laser is adopted to etch a side etching line at the position, close to the etching line of the second laser, of each of the buffer layer, the light absorption layer and the back electrode, and the etching lines of the first laser, the second laser and the third laser are sequentially arranged to obtain the CdTe solar cell with a plurality of cell units connected in series.
Optionally, the transparent substrate layer is an ultrawhite glass substrate, a tempered glass substrate and an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
Optionally, the thickness of the CdS/CdSe buffer layer is 50-100 nm, and the thickness of the CdTe light absorption layer is 2.0-4.0 mu m; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorbing layer comprises vapor transport deposition or near space sublimation deposition.
Optionally, the activation annealing temperature is 350-600 ℃ and the time is 5-40 min.
Optionally, the laser score line has a width of 20-100 μm, and the adjacent score line edges in each set of score lines have a spacing of 30-100 μm.
Optionally, the thickness of the back electrode is 220-250 nm, and the back electrode material comprises molybdenum, silver, copper and gold.
Optionally, the window layer is MgZnO or SnO 2 The height of the window layer bulge is 40-70 nm.
Optionally, a back contact layer is deposited on the CdTe light absorption layer, the material is Cu doped ZnTe, the thickness is 20-30 nm, and the back contact layer is cut off by laser.
The invention also provides a passivated CdTe solar cell, which at least comprises the following structures:
a transparent substrate layer; a transparent bottom electrode, a window layer, a CdS/CdSe buffer layer, a CdTe light absorption layer, a back contact layer and a back electrode are sequentially deposited on the transparent substrate layer; forming a series battery structure by laser scribing; the window layer is of a uniform and dense discontinuous convex structure.
As described above, the manufacturing method of the passivated CdTe solar cell of the invention has the following beneficial effects: mgZnO or SnO with non-flat convex structure is adopted between TCO and buffer layer of CdTe solar cell 2 The window layer plays a role in passivation and lifting open pressure, and meanwhile can play a role in trapping light and improve light absorption and conversion efficiency.
Drawings
FIG. 1 shows a process flow diagram of a method of fabricating a passivated CdTe solar cell in accordance with the invention.
Fig. 2 to 9 are schematic structural views showing steps of a method for manufacturing a passivated CdTe solar cell according to the present invention, wherein fig. 9 shows a structure of a passivated CdTe solar cell according to the present invention.
Description of element numbers:
100. substrate board
200. Bottom electrode
300. Semiconductor heterojunction
301 CdS/CdSe buffer layer
302 CdTe light absorption layer
400. Window layer
500. Photoresist
600. Back electrode
S1 to S8 steps
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
Referring to fig. 1 to 9, it should be noted that the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the illustration, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
The embodiment provides a manufacturing method of a passivated CdTe solar cell, and the step flow is shown as step S1-step S8 in FIG. 1.
Specifically, the specific process of the manufacturing method of the passivated CdTe solar cell is as shown in FIGS. 2-9:
as shown in fig. 2, a substrate layer 100 with a bottom electrode 200 is provided, and the substrate layer may be an ultrawhite glass substrate, a tempered glass substrate, or an organic glass substrate; the material of the bottom electrode is one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer. Sputtering deposition of a window layer 400 on the bottom electrode 200 of the substrate layer 100 using a mask; the mask plate is provided with uniform and dense small holes, the diameters of the small holes are 1-10 mu m, and the distances between the small holes are 1-10 mu m; the transparent bottom electrode 200 is formed with uniformly dense protrusions of window layer 400 material, which may be MgZnO or SnO 2 The height of the window layer bulge is 40-70 nm.
As shown in fig. 3, a CdS/CdSe buffer layer 301 is deposited on the bottom electrode 200 with the dense window layer 400 material bump, wherein the CdS/CdSe buffer layer 301 is a stack of a CdS layer and a CdSe layer; and depositing a CdTe light absorption layer 302 on the CdS/CdSe buffer layer 301, and performing activation annealing treatment on the CdTe light absorption layer 302 through an activation annealing procedure. The thickness of the CdS/CdSe buffer layer 301 is 50-100 nm, and the thickness of the CdTe light absorbing layer 302 is 2.0-4.0 mu m; the CdS/CdSe buffer layer 301 and the CdTe light absorbing layer 302 form a semiconductor heterojunction layer 300, and the deposition method of the semiconductor heterojunction layer 300 comprises vapor transport deposition or near-space sublimation deposition. The activation annealing temperature is 350-600 ℃ and the time is 5-40 min. A back contact layer can be deposited on the CdTe light absorbing layer 302, and the back contact layer is made of Cu doped ZnTe and has a thickness of 20-30 nm.
As shown in fig. 4, the transparent bottom electrode 200, the semiconductor heterojunction 300 and the window layer 400 are cut by using the first laser P1 scribe line, and the whole film layer is divided into a plurality of battery cells; the width of the laser scribing line is 20-100 mu m.
As shown in fig. 5, a cover photoresist 500 is coated, and a scribing line is filled through ultraviolet light exposure and development in the substrate direction;
as shown in fig. 6, the unexposed photoresist is cleaned, using a second laser P2 to scribe each of the adjacent first laser scribe lines; etching the CdS/CdSe buffer layer 301 and the CdTe light absorbing layer 302; the width of the laser scribing line is 20-100 mu m, and the distance between the laser scribing line and the edge of the adjacent P1 scribing line is 30-100 mu m.
As shown in fig. 7, a back electrode 600 is deposited over the entire film surface; the thickness of the back electrode is 220-250 nm, and the back electrode material comprises molybdenum, silver, copper and gold.
As shown in fig. 8, a third laser P3 is used to scribe the CdS/CdSe buffer layer 301, cdTe light absorbing layer 302, and back electrode 600 next to each second laser scribe line, with a laser scribe line width of 20-100 μm and a pitch of 30-100 μm from the edge of the adjacent P2 scribe line. The first laser, the second laser and the third laser are sequentially arranged in a scribing way, so that a passivated CdTe solar cell with a plurality of battery cells connected in series as shown in fig. 9 is obtained.
As shown in fig. 9, the embodiment further provides a passivated CdTe solar cell, the structure at least includes:
the transparent substrate layer 100, on which the transparent bottom electrode 200, the uniform and dense discontinuous raised window layer 400 structure, the CdS/CdSe buffer layer 301, the CdTe light absorbing layer 302, and the back electrode 600 are sequentially deposited, forms a series cell structure by laser scribing.
In summary, the invention adopts MgZnO or SnO with non-flat convex structure between the TCO and the buffer layer of the CdTe solar cell 2 The window layer plays a role in passivation and lifting open pressure, and meanwhile can play a role in trapping light and improve light absorption and conversion efficiency.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (9)

1. A method of manufacturing a passivated CdTe solar cell, comprising the steps of:
1) Providing a transparent substrate layer with a transparent bottom electrode, sputtering a window layer material on the transparent bottom electrode through a mask, wherein the mask is a mask plate with uniform and dense small holes, the diameter of the small holes is 1-10 mu m, and the distance between the small holes is 1-10 mu m so as to form uniform and dense window layer material bulges on the transparent bottom electrode;
2) Depositing a CdS/CdSe buffer layer on the transparent bottom electrode with the uniform and dense window layer material bulges; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing procedure;
3) Depositing a back contact layer on the CdTe light absorption layer;
4) Dividing the whole film layer into a plurality of battery units by adopting a first laser scribing line to cut off the transparent bottom electrode, the window layer, the buffer layer and the light absorption layer;
5) Coating photoresist, and exposing and developing by ultraviolet light in the direction of a substrate to fill a scribing line of a first laser;
6) Cleaning the unexposed photoresist, and etching a window layer, a buffer layer and a light absorption layer by using a second laser to etch a line beside each of the positions close to the first laser;
7) Depositing a back electrode on the whole film surface;
8) And a third laser is adopted to etch a side etching line at the position, close to the etching line of the second laser, of each of the buffer layer, the light absorption layer and the back electrode, and the etching lines of the first laser, the second laser and the third laser are sequentially arranged to obtain the CdTe solar cell with a plurality of cell units connected in series.
2. The method of manufacturing a passivated CdTe solar cell of claim 1, characterized by: the transparent substrate layer is an ultrawhite glass substrate, a tempered glass substrate or an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
3. The method of manufacturing a passivated CdTe solar cell of claim 1, characterized by: the thickness of the CdS/CdSe buffer layer is 50-100 nm, and the thickness of the CdTe light absorption layer is 2.0-4.0 mu m; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorbing layer comprises vapor transport deposition or near space sublimation deposition.
4. The method of manufacturing a passivated CdTe solar cell of claim 1, characterized by: the activation annealing temperature is 350-600 ℃ and the time is 5-40 min.
5. The method of manufacturing a passivated CdTe solar cell of claim 1, characterized by: the width of the laser scribing line is 20-100 mu m, and the spacing between the edges of adjacent scribing lines in each group of scribing lines is 30-100 mu m.
6. The method of manufacturing a passivated CdTe solar cell of claim 1, characterized by: the thickness of the back electrode is 220-250 nm, and the back electrode material comprises molybdenum, silver, copper and gold.
7. A method of fabricating a passivated CdTe solar cell according to any one of claims 1-6The method is characterized in that: the window layer is MgZnO or SnO 2 The height of the window layer bulge is 40-70 nm.
8. A method of manufacturing a passivated CdTe solar cell according to any of the claims 1-6, characterized in that: and a back contact layer is deposited on the CdTe light absorption layer, the material is Cu doped ZnTe, the thickness is 20-30 nm, and the back contact layer is cut off by laser.
9. A passivated CdTe solar cell realized based on the manufacturing method of a passivated CdTe solar cell according to any of the claims 1-8, characterized in that the passivated CdTe solar cell comprises:
a transparent substrate layer; a transparent bottom electrode, a window layer, a CdS/CdSe buffer layer, a CdTe light absorption layer, a back contact layer and a back electrode are sequentially deposited on the transparent substrate layer; forming a series battery structure by laser scribing; the window layer is of a uniform and dense discontinuous convex structure.
CN202111641419.1A 2021-12-29 2021-12-29 Passivating CdTe solar cell and manufacturing method thereof Active CN114388655B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474484A (en) * 2013-09-16 2013-12-25 深圳先进技术研究院 Back electrode of solar battery device, preparation method of back electrode and solar battery device
CN107180880A (en) * 2017-05-23 2017-09-19 北京大学深圳研究生院 A kind of ultra-thin translucent thin film solar cell and preparation method thereof
CN108172643A (en) * 2017-11-29 2018-06-15 成都中建材光电材料有限公司 A kind of CdTe lamination solar cells and preparation method thereof
CN112768556A (en) * 2020-12-31 2021-05-07 中国建材国际工程集团有限公司 Manufacturing process of CdTe solar cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018113251B4 (en) * 2018-06-04 2021-12-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing a CdTe solar cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474484A (en) * 2013-09-16 2013-12-25 深圳先进技术研究院 Back electrode of solar battery device, preparation method of back electrode and solar battery device
CN107180880A (en) * 2017-05-23 2017-09-19 北京大学深圳研究生院 A kind of ultra-thin translucent thin film solar cell and preparation method thereof
CN108172643A (en) * 2017-11-29 2018-06-15 成都中建材光电材料有限公司 A kind of CdTe lamination solar cells and preparation method thereof
CN112768556A (en) * 2020-12-31 2021-05-07 中国建材国际工程集团有限公司 Manufacturing process of CdTe solar cell

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