CN114388655A - Passivated CdTe solar cell and manufacturing method thereof - Google Patents

Passivated CdTe solar cell and manufacturing method thereof Download PDF

Info

Publication number
CN114388655A
CN114388655A CN202111641419.1A CN202111641419A CN114388655A CN 114388655 A CN114388655 A CN 114388655A CN 202111641419 A CN202111641419 A CN 202111641419A CN 114388655 A CN114388655 A CN 114388655A
Authority
CN
China
Prior art keywords
layer
cdte
laser
passivated
light absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202111641419.1A
Other languages
Chinese (zh)
Other versions
CN114388655B (en
Inventor
彭寿
马立云
汪元元
殷新建
吴一民
陈瑛
储静远
盖琳琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Triumph International Engineering Co Ltd
Original Assignee
China Triumph International Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Triumph International Engineering Co Ltd filed Critical China Triumph International Engineering Co Ltd
Priority to CN202111641419.1A priority Critical patent/CN114388655B/en
Publication of CN114388655A publication Critical patent/CN114388655A/en
Application granted granted Critical
Publication of CN114388655B publication Critical patent/CN114388655B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a passivated CdTe solar cell and a manufacturing method thereof, and MgZnO or SnO with an uneven convex structure is adopted between TCO and a buffer layer2The window layer, protruding column structure can play the passivation and promote the effect of opening the pressure, can also play the light trapping effect simultaneously, promotes light absorption and generating efficiency.

Description

Passivated CdTe solar cell and manufacturing method thereof
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to a passivated CdTe solar cell and a manufacturing method thereof.
Background
The cadmium telluride (CdTe) solar cell has the theoretical photoelectric conversion efficiency as high as 28%, has the advantages of convenient manufacture, light weight, low manufacturing cost, excellent photoelectric property and the like, and has wide development space. The CdTe solar cell is based on a heterojunction of p-type CdTe and n-type CdS/CdSe and can absorb more than 95% of sunlight. A typical CdTe solar cell includes: the light-transmitting support substrate mainly plays a role of supporting, preventing pollution and incident sunlight on the CdTe solar cell; the transparent conductive oxide layer mainly plays a role in light transmission and electric conduction; a CdS/CdSe buffer layer providing an n-type semiconductor; the CdTe absorption layer is used as a main light absorption layer and forms a p-n junction with the n-type CdS window layer; the back contact layer and the back electrode lead out current. The efficiency optimization of the CdTe solar cell needs passivation to reduce carrier recombination to improve open-circuit voltage, reduce series resistance to improve short-circuit current, and the structural design obtains good light absorption, so that the development of a passivated CdTe solar cell structure for improving light absorption is really necessary.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a passivated CdTe solar cell and a method for manufacturing the same, which solve the problems of optimizing the light trapping structure of the thin film solar cell in the prior art.
To achieve the above and other related objects, the present invention provides a method for manufacturing passivated CdTe solar cells, comprising the steps of:
1) providing a transparent substrate layer with a transparent bottom electrode, sputtering a window layer material on the transparent bottom electrode through a mask, wherein the mask is a mask plate with uniformly dense small holes, the diameter of each small hole is 1-10 mu m, and the distance between the small holes is 1-10 mu m, so that uniform dense window layer material protrusions are formed on the transparent bottom electrode;
2) depositing a CdS/CdSe buffer layer on the transparent bottom electrode with the uniform and dense window layer material bulges; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing process;
3) a back contact layer is deposited on the CdTe light absorption layer;
4) scribing by using a first laser, cutting off the transparent bottom electrode, the window layer, the buffer layer and the light absorption layer, and dividing the whole film into a plurality of battery units;
5) coating photoresist, exposing and developing by ultraviolet light in the direction of the substrate, and filling the reticle;
6) cleaning the unexposed photoresist, scribing lines beside each scribing line close to the first laser by adopting a second laser, and cutting the window layer, the buffer layer and the light absorption layer;
7) depositing a back electrode on the whole membrane surface;
8) and scribing lines beside each scribing position adjacent to the second laser by using a third laser, and scribing the buffer layer, the light absorption layer and the back electrode, wherein the first laser, the second laser and the third laser are sequentially arranged to obtain the CdTe solar cell with a plurality of cell units connected in series.
Optionally, the transparent substrate layer is an ultra-white glass substrate, a tempered glass substrate or an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
Optionally, the CdS/CdSe buffer layer is 50-100 nm thick, and the CdTe light absorption layer is 2.0-4.0 μm thick; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises vapor transmission deposition or near space sublimation deposition.
Optionally, the activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
Optionally, the width of the laser scribe line is 20-100 μm, and the edge distance between adjacent scribe lines in each group of scribe lines is 30-100 μm.
Optionally, the thickness of the back electrode is 220-250 nm, and the back electrode material includes molybdenum, silver, copper, and gold.
Optionally, the window layer is MgZnO or SnO2The height of the window layer is 40-70 nm.
Optionally, a back contact layer is deposited on the CdTe light absorption layer, the material is Cu-doped ZnTe, the thickness is 20-30 nm, and the back contact layer is cut off by laser.
The invention also provides a passivated CdTe solar cell, the structure at least comprising:
a transparent substrate layer; a transparent bottom electrode, a window layer, a CdS/CdSe buffer layer, a CdTe light absorption layer, a back contact layer and a back electrode are sequentially deposited on the transparent substrate layer; forming a series battery structure by laser scribing; the window layer is of a uniform and dense discontinuous convex structure.
As mentioned above, the manufacturing method of passivated CdTe solar cells according to the present invention has the following beneficial effects: MgZnO or SnO with non-flat and convex structure between TCO (transparent conductive oxide) of CdTe solar cell and buffer layer2The window layer plays the passivation and promotes the effect of opening the pressure, can also play the effect of trapping light simultaneously, promotes light absorption and conversion efficiency.
Drawings
FIG. 1 shows a process flow diagram of a manufacturing method of passivated CdTe solar cells of the invention.
FIGS. 2 to 9 are schematic structural views showing the steps of the method for manufacturing a passivated CdTe solar cell of the present invention, wherein FIG. 9 shows a passivated CdTe solar cell structure of the present invention.
Element number description:
100 substrate
200 bottom electrode
300 semiconductor heterojunction
301 CdS/CdSe buffer layers
302 CdTe light absorption layer
400 window layer
500 photo resist
600 back electrode
S1-S8
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
Referring to fig. 1 to 9, it should be noted that the drawings provided in the present embodiment are only schematic illustrations for explaining the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, number and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
The present embodiment provides a method for manufacturing a passivated CdTe solar cell, the flow of steps is shown as step S1-step S8 in fig. 1.
Specifically, the specific process of the manufacturing method of the passivated CdTe solar cell is shown in figures 2-9:
as shown in fig. 2, a substrate layer 100 with a bottom electrode 200 is provided, and the substrate layer can be an ultra-white glass substrate, a tempered glass substrate or an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer. Sputtering and depositing a window layer 400 on the bottom electrode 200 of the substrate layer 100 by using a mask plate; the mask plate is provided with uniformly dense small holes, the diameter of each small hole is 1-10 mu m, and the distance between the small holes is 1-10 mu m; uniform and dense window layer 400 material bump is formed on the transparent bottom electrode 200, and the window layer material can be MgZnO or SnO2The height of the window layer is 40-70 nm.
As shown in fig. 3, a CdS/CdSe buffer layer 301 is deposited on the bottom electrode 200 with the dense window layer 400 material protrusion, wherein the CdS/CdSe buffer layer 301 is a lamination of a CdS layer and a CdSe layer; depositing a CdTe light absorption layer 302 on the CdS/CdSe buffer layer 301, and performing activation annealing treatment on the CdTe light absorption layer 302 through an activation annealing procedure. The CdS/CdSe buffer layer 301 is 50-100 nm thick, and the CdTe light absorption layer 302 is 2.0-4.0 mu m thick; the CdS/CdSe buffer layer 301 and the CdTe light absorbing layer 302 form a semiconductor heterojunction layer 300, and the deposition method of the semiconductor heterojunction layer 300 comprises vapor transmission deposition or near space sublimation deposition. The activation annealing temperature is 350-600 ℃, and the time is 5-40 min. A back contact layer can also be deposited on the CdTe light absorption layer 302, and the back contact layer is made of Cu-doped ZnTe and has the thickness of 20-30 nm.
As shown in fig. 4, the transparent bottom electrode 200, the semiconductor heterojunction 300 and the window layer 400 are cut by scribing lines with the first laser P1, so as to divide the whole film into a plurality of battery cells; the width of the laser scribe line is 20-100 μm.
As shown in fig. 5, a cap photoresist 500 is coated, exposed and developed by ultraviolet light in the substrate direction, and the reticle is filled;
as shown in fig. 6, the unexposed photoresist is cleaned and a second laser P2 is used to scribe lines next to each of the first laser scribes; etching off the CdS/CdSe buffer layer 301 and the CdTe light absorption layer 302; the width of the laser scribe line is 20-100 μm, and the distance between the laser scribe line and the edge of the adjacent P1 scribe line is 30-100 μm.
As shown in fig. 7, a back electrode 600 is deposited over the entire membrane face; the thickness of the back electrode is 220-250 nm, and the back electrode material comprises molybdenum, silver, copper and gold.
As shown in FIG. 8, a third laser P3 is adopted to scribe lines beside each scribing line adjacent to the second laser, so as to cut off the CdS/CdSe buffer layer 301, the CdTe light absorption layer 302 and the back electrode 600, the width of the laser scribing line is 20-100 μm, and the distance between the laser scribing line and the edge of the adjacent P2 scribing line is 30-100 μm. The first laser, the second laser and the third laser are sequentially arranged to obtain a passivated CdTe solar cell with a plurality of cell units connected in series as shown in fig. 9.
As shown in fig. 9, the present embodiment also provides a passivated CdTe solar cell, the structure at least comprising:
the solar cell comprises a transparent substrate layer 100, wherein a transparent bottom electrode 200, a uniform and dense discontinuous convex window layer 400 structure, a CdS/CdSe buffer layer 301, a CdTe light absorption layer 302 and a back electrode 600 are sequentially deposited on the transparent substrate layer, and a series cell structure is formed by laser scribing.
In conclusion, the CdTe solar cell adopts MgZnO or SnO with an uneven convex structure between TCO and the buffer layer2The window layer plays the passivation and promotes the effect of opening the pressure, can also play the effect of trapping light simultaneously, promotes light absorption and conversion efficiency.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (9)

1. A method for manufacturing passivated CdTe solar cells, characterized in that it comprises the steps of:
1) providing a transparent substrate layer with a transparent bottom electrode, sputtering a window layer material on the transparent bottom electrode through a mask, wherein the mask is a mask plate with uniformly dense small holes, the diameter of each small hole is 1-10 mu m, and the distance between the small holes is 1-10 mu m, so that uniform dense window layer material protrusions are formed on the transparent bottom electrode;
2) depositing a CdS/CdSe buffer layer on the transparent bottom electrode with the uniform and dense window layer material bulges; depositing a CdTe light absorption layer on the CdS/CdSe buffer layer, and performing activation annealing treatment on the CdTe light absorption layer through an activation annealing process;
3) depositing a back contact layer on the CdTe light absorption layer;
4) scribing by using a first laser, cutting off the transparent bottom electrode, the window layer, the buffer layer and the light absorption layer, and dividing the whole film into a plurality of battery units;
5) coating photoresist, and exposing and developing the photoresist by ultraviolet light in the direction of the substrate to fill the reticle of the first laser;
6) cleaning the unexposed photoresist, scribing lines beside each scribing line close to the first laser by adopting a second laser, and cutting the window layer, the buffer layer and the light absorption layer;
7) depositing a back electrode on the whole membrane surface;
8) and scribing lines beside each scribing position adjacent to the second laser by using a third laser, and scribing the buffer layer, the light absorption layer and the back electrode, wherein the first laser, the second laser and the third laser are sequentially arranged to obtain the CdTe solar cell with a plurality of cell units connected in series.
2. A method of manufacturing passivated CdTe solar cells according to claim 1, characterized in that: the transparent substrate layer is an ultra-white glass substrate, a toughened glass substrate and an organic glass substrate; the bottom electrode is made of one of an ITO conductive film layer, an FTO conductive film layer and an AZO conductive film layer.
3. A method of manufacturing passivated CdTe solar cells according to claim 1, characterized in that: the CdS/CdSe buffer layer is 50-100 nm thick, and the CdTe light absorption layer is 2.0-4.0 mu m thick; the deposition method of the CdS/CdSe buffer layer and the CdTe light absorption layer comprises vapor transmission deposition or near space sublimation deposition.
4. Method for manufacturing passivated CdTe solar cells according to claim 1, characterized in that: the activation annealing temperature is 350-600 ℃, and the time is 5-40 min.
5. A method of manufacturing passivated CdTe solar cells according to claim 1, characterized in that: the laser scribing width is 20-100 mu m, and the edge distance between adjacent scribing lines in each group of scribing lines is 30-100 mu m.
6. A method of manufacturing passivated CdTe solar cells according to claim 1, characterized in that: the thickness of the back electrode is 220-250 nm, and the back electrode material comprises molybdenum, silver, copper and gold.
7. A method for the manufacture of passivated CdTe solar cells according to any of claims 1 to 6, characterized in that: the window layer is MgZnO or SnO2The height of the window layer is 40-70 nm.
8. A method for the manufacture of passivated CdTe solar cells according to any of claims 1 to 6, characterized in that: and a back contact layer is deposited on the CdTe light absorption layer, the material is Cu-doped ZnTe, the thickness is 20-30 nm, and the back contact layer is cut off by laser.
9. A passivated CdTe solar cell, characterized in that the passivated CdTe solar cell comprises:
a transparent substrate layer; a transparent bottom electrode, a window layer, a CdS/CdSe buffer layer, a CdTe light absorption layer, a back contact layer and a back electrode are sequentially deposited on the transparent substrate layer; forming a series battery structure by laser scribing; the window layer is of a uniform and dense discontinuous convex structure.
CN202111641419.1A 2021-12-29 2021-12-29 Passivating CdTe solar cell and manufacturing method thereof Active CN114388655B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111641419.1A CN114388655B (en) 2021-12-29 2021-12-29 Passivating CdTe solar cell and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111641419.1A CN114388655B (en) 2021-12-29 2021-12-29 Passivating CdTe solar cell and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN114388655A true CN114388655A (en) 2022-04-22
CN114388655B CN114388655B (en) 2024-01-30

Family

ID=81200490

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111641419.1A Active CN114388655B (en) 2021-12-29 2021-12-29 Passivating CdTe solar cell and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN114388655B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474484A (en) * 2013-09-16 2013-12-25 深圳先进技术研究院 Back electrode of solar battery device, preparation method of back electrode and solar battery device
CN107180880A (en) * 2017-05-23 2017-09-19 北京大学深圳研究生院 A kind of ultra-thin translucent thin film solar cell and preparation method thereof
CN108172643A (en) * 2017-11-29 2018-06-15 成都中建材光电材料有限公司 A kind of CdTe lamination solar cells and preparation method thereof
US20190371958A1 (en) * 2018-06-04 2019-12-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing a cdte solar cell
CN112768556A (en) * 2020-12-31 2021-05-07 中国建材国际工程集团有限公司 Manufacturing process of CdTe solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474484A (en) * 2013-09-16 2013-12-25 深圳先进技术研究院 Back electrode of solar battery device, preparation method of back electrode and solar battery device
CN107180880A (en) * 2017-05-23 2017-09-19 北京大学深圳研究生院 A kind of ultra-thin translucent thin film solar cell and preparation method thereof
CN108172643A (en) * 2017-11-29 2018-06-15 成都中建材光电材料有限公司 A kind of CdTe lamination solar cells and preparation method thereof
US20190371958A1 (en) * 2018-06-04 2019-12-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing a cdte solar cell
CN112768556A (en) * 2020-12-31 2021-05-07 中国建材国际工程集团有限公司 Manufacturing process of CdTe solar cell

Also Published As

Publication number Publication date
CN114388655B (en) 2024-01-30

Similar Documents

Publication Publication Date Title
KR20150031889A (en) Solar cell
KR20120063324A (en) Bifacial solar cell
TW201436264A (en) Solar cell and method of manufacture thereof
CN112768556A (en) Manufacturing process of CdTe solar cell
US20130152999A1 (en) Photovoltaic component for use under concentrated solar flux
CN103189997A (en) Solar cell apparatus and method for manufacturing the same
US20150059842A1 (en) Solar cell
KR101189309B1 (en) Solar cell and solar cell module
CN105023966A (en) Interconnect for a thin film photovoltaic solar cell, and method for making the same
KR101382898B1 (en) See through type solar cell and fabricating method
KR101166456B1 (en) Solar cell and method for fabricating the same
KR101173418B1 (en) Solar cell and method of fabricating the same
CN114388655B (en) Passivating CdTe solar cell and manufacturing method thereof
JP3240825U (en) thin film solar cell
KR101327126B1 (en) Solar cell and solar cell module unsing the same
CN114361293B (en) Double-sided power generation CdTe solar cell and manufacturing method thereof
CN104011876B (en) Solar battery apparatus and manufacture method thereof
KR101210034B1 (en) Solar cell and method of fabricating the same
KR20120085577A (en) Solar cell and manufacturing method of the same
US20150007890A1 (en) Photovoltaic device comprising heat resistant buffer layer, and method of making the same
KR20180098214A (en) Solar cell and manufacturing method thereof
KR20120085571A (en) Solar cell
CN103477443A (en) Solar cell and method of fabricating the same
KR102396820B1 (en) Solar cell module and method of fabricating the same
KR101417321B1 (en) Solar cell and method of fabricating the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant