CN108172643A - A kind of CdTe lamination solar cells and preparation method thereof - Google Patents
A kind of CdTe lamination solar cells and preparation method thereof Download PDFInfo
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- 238000003475 lamination Methods 0.000 title claims abstract description 31
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract 31
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910007709 ZnTe Inorganic materials 0.000 claims abstract description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000005361 soda-lime glass Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 25
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 18
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 11
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 claims description 5
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 112
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 64
- 239000010408 film Substances 0.000 description 20
- 238000005755 formation reaction Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010307 cell transformation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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Abstract
The invention discloses a kind of CdTe lamination solar cells and preparation method thereof, the structure of the CdTe lamination solar cells includes soda-lime glass substrate layer, MO films back electrode layer, ZnTe back contacts, the first light absorbing layers of CdTe, CdS first windows layer, the second light absorbing layers of CdTe, the second Window layers of ZnS, SnO successively from bottom to top2Electrode layer and soda-lime glass superficial layer before resistive formation, FTO；Cu is doped in the ZnTe back contacts, oxygen is doped in the second light absorbing layers of CdTe.The battery conversion efficiency of CdTe lamination solar cells provided by the invention is high, and production method uses preparation technology in low temperature, and of low cost, technological level is reliable, is suitble to be applied in large-scale production.
Description
Technical field
The present invention relates to a kind of CdTe lamination solar cells and preparation method thereof, belong to thin film solar cell technologies neck
Domain.
Background technology
It is that the direct forbidden band that energy gap is 1.46eV is partly led as II-VI group compound semiconductor cadmium telluride (CdTe)
Body very close to the optimization energy gap that solar cell needs, has very high solar absorption coefficient, with regard to solar radiation light
For energy is higher than the range of CdTe energy gaps in spectrum, the CdTe thin film of 1um thickness can effectively absorb its 99%.So its
Absorption coefficient is very high in visible wavelength range, has very high transfer efficiency and relatively low cost, but in long wave band relatively
It is low.CdTe film battery problems faced is at present：(1) replacement (3) back contact of promotion (2) Window layer of open-circuit voltage
Select (4) doping problem.
Conventional unijunction solar cell is not high to the utilization rate of solar spectrum, and photon energy, which is more than, absorbs layer bandwidth
Photon, which is absorbed, is changed into photo-generated carrier, but photon is then lost higher than the portion of energy of energy gap in a manner of Phonon emission
Fall, the photon that photon energy is less than energy gap cannot be converted into photo-generated carrier.Combination is tied using different bandwidth absorbed layer more
The solar spectrum utilization scope that mode widens absorbed layer is to promote the important channel of solar cell transformation efficiency.Laminate solar
The difficult point of battery is the good semiconductor of two kinds of Lattice Matchings of searching, and ideally, the top layer of battery conduction band should have
The about the same energy with bottom valence band so that the electronics of top semiconductor can be easily from conduction band after being excited by sunlight
Into the hole (valence band) of base semiconductor lattice, electronics is excited in valence band by the sunlight of different wave length again, such two parts
Battery works together, forms the structure of series connection.
Invention content
In view of this, in view of the deficiencies of the prior art, the present invention provides a kind of CdTe lamination solar cells and its making
Method improves the battery conversion efficiency of solar cell.
For solution more than technical problem, technical scheme of the present invention employs a kind of CdTe lamination solar cells, knot
Structure includes soda-lime glass substrate layer, MO films back electrode layer, ZnTe back contacts, the first light absorptions of CdTe successively from bottom to top
Layer, CdS first windows layer, the second light absorbing layers of CdTe, the second Window layers of ZnS, SnO2Electrode layer and sodium calcium before resistive formation, FTO
Surface layer of glass；Cu is doped in the ZnTe back contacts, oxygen is doped in the second light absorbing layers of CdTe.
Further, the doping of Cu is 0.2%~0.7% in the ZnTe back contacts.
Further, the doping of oxygen is 0.5~1% in second light absorbing layers of CdTe.
Further, the thickness of the MO films back electrode layer is 200nm.
Further, the thickness of the ZnTe back contacts is 50nm.
Further, the thickness of first light absorbing layers of CdTe is 500nm, and the thickness of the second light absorbing layers of CdTe is 2 μ
m。
Further, the thickness of the CdS first windows layer is 50nm, and the thickness of the second Window layers of ZnS is 80nm.
Further, the SnO2The thickness of resistive formation is 20nm, and the thickness of electrode layer is 350nm before FTO.
Meanwhile the present invention also provides a kind of production methods of CdTe lamination solar cells, it is in sodium calcium substrate glass
MO films back electrode layer, ZnTe back contacts, the first light absorbing layers of CdTe, CdS first windows layer, CdTe is sequentially prepared on glass
Two light absorbing layers, the second Window layers of ZnS, SnO2Electrode layer before resistive formation and FTO, is preparing the first light absorbing layer and the second light
Battery is heat-treated after absorbed layer.
Specifically include the following steps：
(1) MO film back electrode layers are deposited on soda-lime glass, depositional mode uses magnetron sputtering method；
(2) ZnTe back contacts are deposited on back electrode layer, using Cu techniques are mixed, the doping of Cu is ZnTe back contacts
0.2%~0.7%, using magnetron sputtering ZnTe：Cu films solve the problems, such as back contacts, that is, reduce potential barrier, form
Good Ohmic contact；
(3) and then on ZnTe back contacts the first light absorbing layers of CdTe, the light absorbing layer are deposited using magnetron sputtering method
Without doping, the situation small compared with first layer energy gap is formed, it in this way can be with the broader solar energy of absorbing wavelength；
(4) CdS first window layers are deposited using magnetron sputtering method on the first light absorbing layers of CdTe, i.e., in polycrystalline CdTe film
Upper CdS thin films；
(5) the good material of above-mentioned deposition is subjected to first time heat treatment, i.e., in CdCl2It anneals 45 minutes in atmosphere, purpose
It is to promote grain growth, reduces boundary barrier potential, promote the atomic migration of CdTe；
(6) the second light absorbing layers of CdTe are deposited using magnetron sputtering method on CdS first window layers, using being passed through during deposition
The mode of argon oxygen gas mixture forms the second light absorbing layers of CdTe the doping of oxygen, and the doping of oxygen is 0.5%~1%, and oxygen is mixed
It is miscellaneous to promote grain growth, increase carrier lifetime, be passivated grain boundary defects, increase open-circuit voltage, it is wide to form top cell band gap
Situation, shortwave is absorbed, long wave penetrate, bottom absorb；
(7) the second Window layers of ZnS are deposited using magnetron sputtering method on the second light absorbing layers of CdTe；
(8) the good material of above-mentioned deposition is carried out second to be heat-treated, i.e., in CdCl2It anneals 45 minutes in atmosphere, purpose
It is to promote second layer light absorbing layer grain growth, reduces boundary barrier potential, promote the atomic migration of CdTe；
(9) and then in the second Window layers of ZnS SnO is deposited2Resistive formation, electrode layer FTO films before deposition, depositional mode are
Magnetron sputtering method.
In laminated cell preparation process, the cascaded structure of battery is realized by laser grooving and scribing；Lamination electricity is carried out as needed
The encapsulation in pond is completed laminated cell and is prepared.
Compared with prior art, the present invention by back contact adulterate Cu, improve CdTe battery light absorbing layer doping,
O is adulterated, while the second Window layer is replaced with ZnS in the second light absorbing layer, form the lamination knot that energy gap is slightly different up and down
Structure fully absorbs sunlight, improves open-circuit voltage, and good Lattice Matching is formd between two batteries, perfect shape
Into upper and lower cascaded structure.And the present invention, using preparation technology in low temperature, of low cost, technological level is reliable, is suitble to be applied to big
In large-scale production.
Description of the drawings
Fig. 1 is the structure diagram of CdTe lamination solar cells provided by the invention.
Marginal data：
1- substrate layers；2- back electrode layers；3- back contacts；The first light absorbing layers of 4-；5- first window layers；The second light of 6- is inhaled
Receive layer；The second Window layers of 7-；8- resistive formations；Electrode layer before 9-；10- superficial layers.
Specific embodiment
It is below in conjunction with the accompanying drawings and specific real in order to which those skilled in the art is made to more fully understand technical scheme of the present invention
Applying mode, the present invention is described in further detail.
Referring to Fig. 1, the present invention provides a kind of CdTe lamination solar cells, structure includes sodium calcium successively from bottom to top
Glass substrate layer 1, MO films back electrode layer 2, ZnTe back contacts 3, the first light absorbing layers of CdTe 4, CdS first windows layer 5,
The second light absorbing layers of CdTe 6, the second Window layers of ZnS 7, SnO2Electrode layer 9 and soda-lime glass superficial layer 10 before resistive formation 8, FTO；
Cu is doped in the ZnTe back contacts, oxygen is doped in the second light absorbing layers of CdTe.
Further, the doping of Cu is 0.2%~0.7% in the ZnTe back contacts.
Further, the doping of oxygen is 0.5~1% in second light absorbing layers of CdTe.
Further, the thickness of the MO films back electrode layer is 200nm.
Further, the thickness of the ZnTe back contacts is 50nm.
Further, the thickness of first light absorbing layers of CdTe is 500nm, and the thickness of the second light absorbing layers of CdTe is
2um。
Further, the thickness of the CdS first windows layer is 50nm, and the thickness of the second Window layers of ZnS is 80nm.
Further, the SnO2The thickness of resistive formation is 20nm, and the thickness of electrode layer is 350nm before FTO.
Meanwhile the present invention also provides a kind of production methods of CdTe lamination solar cells, it is in sodium calcium substrate glass
MO films back electrode layer, ZnTe back contacts, the first light absorbing layers of CdTe, CdS first windows layer, CdTe is sequentially prepared on glass
Two light absorbing layers, the second Window layers of ZnS, SnO2Electrode layer before resistive formation and FTO, is preparing the first light absorbing layer and the second light
Battery is heat-treated after absorbed layer.
Specifically include the following steps：
(1) MO film back electrode layers are deposited on soda-lime glass, depositional mode uses magnetron sputtering method；
(2) ZnTe back contacts are deposited on back electrode layer, using Cu techniques are mixed, the doping of Cu is ZnTe back contacts
0.2%~0.7%, using magnetron sputtering ZnTe：Cu films, solve the problems, such as back contacts；
(3) and then on ZnTe back contacts the first light absorbing layers of CdTe, the light absorbing layer are deposited using magnetron sputtering method
Without doping, the situation small compared with first layer energy gap is formed, it in this way can be with the broader solar energy of absorbing wavelength；
(4) CdS first window layers are deposited using magnetron sputtering method on the first light absorbing layers of CdTe, i.e., in polycrystalline CdTe film
Upper CdS thin films；
(5) the good material of above-mentioned deposition is subjected to first time heat treatment, i.e., in CdCl2It anneals 45 minutes in atmosphere, purpose
It is to promote grain growth, reduces boundary barrier potential, promote the atomic migration of CdTe；
(6) the second light absorbing layers of CdTe are deposited using magnetron sputtering method on CdS first window layers, using being passed through during deposition
The mode of argon oxygen gas mixture forms the second light absorbing layers of CdTe the doping of oxygen, and the doping of oxygen is 0.5%~1%, and oxygen is mixed
It is miscellaneous to promote grain growth, increase carrier lifetime, be passivated grain boundary defects, increase open-circuit voltage, it is wide to form top cell band gap
Situation, shortwave is absorbed, long wave penetrate, bottom absorb；
(7) the second Window layers of ZnS are deposited using magnetron sputtering method on the second light absorbing layers of CdTe；
(8) the good material of above-mentioned deposition is carried out second to be heat-treated, i.e., in CdCl2It anneals 45 minutes in atmosphere, purpose
It is to promote second layer light absorbing layer grain growth, reduces boundary barrier potential, promote the atomic migration of CdTe；
(9) and then in the second Window layers of ZnS SnO is deposited2Resistive formation, electrode layer FTO films before deposition, depositional mode are
Magnetron sputtering method.
In laminated cell preparation process, the cascaded structure of battery is realized by laser grooving and scribing；Lamination electricity is carried out as needed
The encapsulation in pond is completed laminated cell and is prepared.
Embodiment 1：
Prepare CdTe lamination solar cells of the present invention：
(1) MO films are deposited on soda-lime glass and form MO film back electrode layers, depositional mode uses magnetron sputtering method；
(2) ZnTe of deposition doping Cu forms ZnTe back contacts on back electrode layer, and ZnTe back contacts, which use, mixes Cu
Technique, the doping of Cu is 0.5%, using magnetron sputtering ZnTe：Cu films, solve the problems, such as back contacts；
(3) and then on ZnTe back contacts the first light absorbing layers of CdTe are formed using magnetron sputtering method deposition CdTe, it should
Light absorbing layer without doping, form the situation small compared with first layer energy gap, in this way can be with the broader solar energy of absorbing wavelength；
(4) CdS first window layers are deposited using magnetron sputtering method on the first light absorbing layers of CdTe, i.e., in polycrystalline CdTe film
Upper CdS thin films；
(5) the good material of above-mentioned deposition is subjected to first time heat treatment, i.e., in CdCl2It anneals 45 minutes in atmosphere, purpose
It is to promote grain growth, reduces boundary barrier potential, promote the atomic migration of CdTe；
(6) the second light absorptions of CdTe are formed using the CdTe of magnetron sputtering method deposition doping O on CdS first window layers
Layer during deposition by the way of argon oxygen gas mixture is passed through, forms the second light absorbing layers of CdTe the doping of oxygen, and the doping of oxygen is
0.5%~1%, the doping of oxygen can promote grain growth, increase carrier lifetime, be passivated grain boundary defects, increase open-circuit voltage,
The wide situation of top cell band gap is formed, shortwave is absorbed, long wave penetrates, bottom absorbs；
(7) the second Window layers of ZnS are formed using magnetron sputtering method deposition ZnS on the second light absorbing layers of CdTe；
(8) the good material of above-mentioned deposition is carried out second to be heat-treated, i.e., in CdCl2It anneals 45 minutes in atmosphere, purpose
It is to promote second layer light absorbing layer grain growth, reduces boundary barrier potential, promote the atomic migration of CdTe；
(9) and then in the second Window layers of ZnS SnO is deposited2Form SnO2Resistive formation, the tin oxide for depositing Fluorin doped are formed
Preceding electrode layer FTO films, depositional mode are magnetron sputtering method.
In laminated cell preparation process, the cascaded structure of battery is realized by laser grooving and scribing；Lamination electricity is carried out as needed
The encapsulation in pond is completed laminated cell and is prepared.
The battery conversion efficiency of gained CdTe lamination solar cells is detected, the CdTe lamination sun that can must be prepared
Can battery open-circuit voltage for 925mv, battery conversion efficiency 15.4%.
Embodiment 2：
Prepare conventional CdTe unijunction solar cells：
CSS (500 DEG C or so of substrate)/VTD (200 DEG C or so of substrate) method is taken to prepare CdTe unijunctions using FTO substrates
Solar cell
The battery conversion efficiency of gained CdTe unijunction solar cells is detected, the CdTe unijunction sun that can must be prepared
Can battery open-circuit voltage for 890mv, battery conversion efficiency 13%.
As can be seen from the above-described embodiment, the open-circuit voltage of CdTe lamination solar cells provided by the invention is high, battery
High conversion efficiency has effectively widened the solar spectrum utilization scope of absorbed layer.
It should be pointed out that the above embodiment is not construed as limitation of the present invention, protection scope of the present invention should
It is subject to claim limited range.For those skilled in the art, do not departing from the present invention's
In spirit and scope, several improvements and modifications can also be made, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of CdTe lamination solar cells, it is characterised in that：The structure of the CdTe lamination solar cells is from bottom to top
Include soda-lime glass substrate layer, MO films back electrode layer, ZnTe back contacts, the first light absorbing layers of CdTe, the first windows of CdS successively
Mouth layer, the second light absorbing layers of CdTe, the second Window layers of ZnS, SnO2Electrode layer and soda-lime glass superficial layer before resistive formation, FTO；Institute
It states and Cu is doped in ZnTe back contacts, oxygen is doped in the second light absorbing layers of CdTe.
2. a kind of CdTe lamination solar cells according to claim 1, it is characterised in that：In the ZnTe back contacts
The doping of Cu is 0.2%~0.7%.
3. a kind of CdTe lamination solar cells according to claim 1, it is characterised in that：Second light absorptions of CdTe
The doping of oxygen is 0.5%~1% in layer.
4. a kind of CdTe lamination solar cells according to claim 1, it is characterised in that：The MO films back electrode layer
Thickness be 200nm.
5. a kind of CdTe lamination solar cells according to claim 1, it is characterised in that：The ZnTe back contacts
Thickness is 50nm.
6. a kind of CdTe lamination solar cells according to claim 1, it is characterised in that：First light absorptions of CdTe
The thickness of layer is 500nm, and the thickness of the second light absorbing layers of CdTe is 2 μm.
7. a kind of CdTe lamination solar cells according to claim 1, it is characterised in that：The CdS first windows layer
Thickness for 50nm, the thickness of the second Window layers of ZnS is 80nm.
8. a kind of CdTe lamination solar cells according to claim 1, it is characterised in that：The SnO2The thickness of resistive formation
It spends for 20nm, the thickness of electrode layer is 350nm before FTO.
9. a kind of production method of CdTe lamination solar cells, it is characterised in that：Include the following steps：In sodium calcium substrate glass
On be sequentially prepared MO films back electrode layer, ZnTe back contacts, the first light absorbing layers of CdTe, CdS first windows layer, CdTe second
Light absorbing layer, the second Window layers of ZnS, SnO2Electrode layer before resistive formation and FTO carries out heat after light absorbing layer is prepared to battery
Processing.
10. a kind of production method of CdTe lamination solar cells according to claim 9, it is characterised in that：Including with
Lower step：
(1) MO film back electrode layers are deposited on soda-lime glass；
(2) ZnTe back contacts are deposited on back electrode layer, using Cu techniques are mixed, the doping of Cu is ZnTe back contacts
0.2%~0.7%；
(3) the first light absorbing layers of CdTe are deposited on ZnTe back contacts；
(4) CdS first window layers are deposited on the first light absorbing layers of CdTe；
(5) the good material of above-mentioned deposition is subjected to first time heat treatment, i.e., in CdCl2It anneals 45 minutes in atmosphere；
(6) the second light absorbing layers of CdTe are deposited on CdS first window layers, during deposition by the way of argon oxygen gas mixture is passed through,
The doping of oxygen is formed to the second light absorbing layers of CdTe, the doping of oxygen is 0.5%~1%；
(7) the second Window layers of ZnS are deposited on the second light absorbing layers of CdTe；
(8) the good material of above-mentioned deposition is carried out second to be heat-treated, i.e., in CdCl2It anneals 45 minutes in atmosphere；
(9) SnO is deposited in the second Window layers of ZnS2Electrode layer before resistive formation and FTO；
Above-mentioned deposition method uses magnetron sputtering method.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767756A (en) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | Solar cell and preparation method thereof |
| CN113555458A (en) * | 2021-07-21 | 2021-10-26 | 成都中建材光电材料有限公司 | Thin film solar cell and manufacturing method thereof |
| CN114284378A (en) * | 2021-12-21 | 2022-04-05 | 成都中建材光电材料有限公司 | Thin film laminated solar cell and manufacturing method thereof |
| CN114388656A (en) * | 2021-12-29 | 2022-04-22 | 中国建材国际工程集团有限公司 | CdTe power generation glass and manufacturing method thereof |
| CN114388655A (en) * | 2021-12-29 | 2022-04-22 | 中国建材国际工程集团有限公司 | Passivated CdTe solar cell and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978101A (en) * | 2008-03-18 | 2011-02-16 | 索莱克山特公司 | Improved back contact in thin solar cells |
| US20130029454A1 (en) * | 2011-07-28 | 2013-01-31 | General Electric Company | Method for making photovoltaic devices |
| CN103022212A (en) * | 2012-12-18 | 2013-04-03 | 李毅 | Efficient and energy saving laminated thin-film solar cell and manufacturing method |
| US20130146133A1 (en) * | 2011-12-13 | 2013-06-13 | Battelle Memorial Institute | Thin film photovoltaic solar cell device |
| US9034686B2 (en) * | 2012-06-29 | 2015-05-19 | First Solar, Inc. | Manufacturing methods for semiconductor devices |
| CN205194721U (en) * | 2015-11-04 | 2016-04-27 | 湖南共创光伏科技有限公司 | Many stromatolites of multijunction cadmium telluride thin -film solar cell |
| CN107112374A (en) * | 2014-11-03 | 2017-08-29 | 第阳光公司 | Photovoltaic devices and manufacture method |
| CN206460962U (en) * | 2016-12-28 | 2017-09-01 | 成都中建材光电材料有限公司 | A kind of flexible cadmium telluride thin-film battery |
-
2017
- 2017-11-29 CN CN201711229636.3A patent/CN108172643A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978101A (en) * | 2008-03-18 | 2011-02-16 | 索莱克山特公司 | Improved back contact in thin solar cells |
| US20130029454A1 (en) * | 2011-07-28 | 2013-01-31 | General Electric Company | Method for making photovoltaic devices |
| US20130146133A1 (en) * | 2011-12-13 | 2013-06-13 | Battelle Memorial Institute | Thin film photovoltaic solar cell device |
| US9034686B2 (en) * | 2012-06-29 | 2015-05-19 | First Solar, Inc. | Manufacturing methods for semiconductor devices |
| CN103022212A (en) * | 2012-12-18 | 2013-04-03 | 李毅 | Efficient and energy saving laminated thin-film solar cell and manufacturing method |
| CN107112374A (en) * | 2014-11-03 | 2017-08-29 | 第阳光公司 | Photovoltaic devices and manufacture method |
| CN205194721U (en) * | 2015-11-04 | 2016-04-27 | 湖南共创光伏科技有限公司 | Many stromatolites of multijunction cadmium telluride thin -film solar cell |
| CN206460962U (en) * | 2016-12-28 | 2017-09-01 | 成都中建材光电材料有限公司 | A kind of flexible cadmium telluride thin-film battery |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767756A (en) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | Solar cell and preparation method thereof |
| CN113555458A (en) * | 2021-07-21 | 2021-10-26 | 成都中建材光电材料有限公司 | Thin film solar cell and manufacturing method thereof |
| CN114284378A (en) * | 2021-12-21 | 2022-04-05 | 成都中建材光电材料有限公司 | Thin film laminated solar cell and manufacturing method thereof |
| CN114388656A (en) * | 2021-12-29 | 2022-04-22 | 中国建材国际工程集团有限公司 | CdTe power generation glass and manufacturing method thereof |
| CN114388655A (en) * | 2021-12-29 | 2022-04-22 | 中国建材国际工程集团有限公司 | Passivated CdTe solar cell and manufacturing method thereof |
| CN114388655B (en) * | 2021-12-29 | 2024-01-30 | 中国建材国际工程集团有限公司 | Passivating CdTe solar cell and manufacturing method thereof |
| CN114388656B (en) * | 2021-12-29 | 2024-04-26 | 中国建材国际工程集团有限公司 | CdTe power generation glass and manufacturing method thereof |
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