CN114284378A - Thin film laminated solar cell and manufacturing method thereof - Google Patents
Thin film laminated solar cell and manufacturing method thereof Download PDFInfo
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- CN114284378A CN114284378A CN202111575184.0A CN202111575184A CN114284378A CN 114284378 A CN114284378 A CN 114284378A CN 202111575184 A CN202111575184 A CN 202111575184A CN 114284378 A CN114284378 A CN 114284378A
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- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000031700 light absorption Effects 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000005525 hole transport Effects 0.000 claims abstract description 22
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 19
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 230000011218 segmentation Effects 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910003437 indium oxide Inorganic materials 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- 239000002313 adhesive film Substances 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical group [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 286
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000075 oxide glass Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a thin film laminated solar cell and a manufacturing method thereof, wherein the solar cell comprises a first layer cell and a second layer cell which are stacked; the first layer of cells are selenium-doped cadmium telluride cells, and the second layer of cells are perovskite cells; the selenium-doped cadmium telluride cell comprises a substrate, a light absorption layer, a back contact buffer layer I, a back contact buffer layer II and a back electrode layer which are sequentially arranged; the perovskite battery comprises a substrate, a hole transport layer, a light absorption layer and a back electrode layer which are sequentially arranged; the selenium-doped cadmium telluride cell is arranged opposite to the back electrode layer of the perovskite cell, and the negative electrode of the selenium-doped cadmium telluride cell is connected with the positive electrode of the perovskite cell. The photovoltaic solar cells with two different band gaps are stacked, so that the absorption band gap is widened, and the conversion efficiency is improved.
Description
Technical Field
The invention relates to a photovoltaic solar cell and a manufacturing method thereof.
Background
In a standard single junction solar cell, photons with energies below the bandgap energy of the semiconductor cannot be absorbed, while photons with energies above the bandgap energy are thermalized from where they are extracted to the bandgap edge. Single junction cell efficiency Skockley-queesser limit (33%). The traditional solar thin film cell is generally single-layer, and the efficiency of the traditional single-layer thin film cell such as cadmium telluride, copper indium gallium selenide, gallium arsenide, perovskite and the like is slowly improved in the process of large-area preparation, and the improvement of one point can take several years or even ten years, so that the cost is greatly reduced by improving the efficiency for production enterprises.
Disclosure of Invention
In view of the above, the present invention provides a thin film stacked solar cell and a manufacturing method thereof, in which two photovoltaic solar cells with different band gaps are stacked to widen an absorption band gap and improve conversion efficiency.
In order to solve the technical problem, the invention provides a thin film laminated solar cell, which comprises a first layer of stacked cells and a second layer of stacked cells; the first layer of cells are selenium-doped cadmium telluride cells, and the second layer of cells are perovskite cells; the selenium-doped cadmium telluride cell comprises a substrate, a light absorption layer, a back contact buffer layer I, a back contact buffer layer II and a back electrode layer which are sequentially arranged; the perovskite battery comprises a substrate, a hole transport layer, a light absorption layer and a back electrode layer which are sequentially arranged; the selenium-doped cadmium telluride cell is arranged opposite to the back electrode layer of the perovskite cell, and the negative electrode of the selenium-doped cadmium telluride cell is connected with the positive electrode of the perovskite cell.
As an improvement, the substrate of the selenium-doped cadmium telluride cell is fluorine-doped conductive glass, the light absorption layer is selenium-doped cadmium telluride, the back contact buffer layer I is intrinsic zinc telluride, the back contact buffer layer II is copper-doped zinc telluride, and the back electrode layer is a molybdenum electrode.
As an improvement, the substrate of the perovskite battery is fluorine-doped conductive glass, the hole transport layer is nickel oxide, the light absorption layer is inorganic perovskite, and the back electrode layer is a tin-doped indium oxide electrode.
Preferably, the first layer of cells and the second layer of cells are respectively divided into a plurality of sub-cells connected in series.
As an improvement, the first layer of battery is divided into a plurality of sub-batteries by a layer of scribed line I and a layer of scribed line III which are longitudinally arranged; the layer of scribed lines I and the layer of scribed lines III are parallel and arranged in a staggered mode at intervals; the scribed line I penetrates through the substrate conducting layer, the light absorption layer, the back contact buffer layer I and the back contact buffer layer II to reach the electrode layer, and photoresist is filled in the scribed line I to form negative electrode segmentation in an insulation mode; the scribed line III penetrates through the electrode layer, the back contact buffer layer II, the back contact buffer layer I and the light absorption layer to reach the substrate to form positive electrode segmentation; and a layer of scribed line II is longitudinally arranged between each sub-cell, penetrates through the light absorption layer and the back contact buffer layer I, reaches the electrode layer through the back contact buffer layer II, and is filled with molybdenum so as to form a conductive channel.
Preferably, the second layer of battery is divided into a plurality of sub-batteries by a plurality of longitudinally-arranged two-layer scribed lines I and III; the two layers of scribed lines I and the two layers of scribed lines III are arranged in parallel at intervals in a staggered manner; the two layers of scribed lines I penetrate through the substrate conducting layer to reach the hole transport layer, and nickel oxide is filled in the hole transport layer to form anode electrode segmentation; the two layers of scribed lines III penetrate through the light absorption layer and the back electrode layer to form negative electrode segmentation; and two layers of scribed lines II which are longitudinally arranged are arranged between each sub-cell, penetrate through the hole transport layer and the light absorption layer and reach the back electrode layer, and are filled with tin-doped indium oxide so as to form a conductive channel.
As a modification, the first layer of batteries and the second layer of batteries are bonded together by using a transparent adhesive film.
As an improvement, the first layer of batteries is provided with a positive electrode leading-out end and a negative electrode leading-out end, and the second layer of batteries is provided with a positive electrode leading-out end and a negative electrode leading-out end; and the positive leading-out ends and the negative leading-out ends of the first layer of batteries and the second layer of batteries are opposite.
As an improvement, the negative electrode leading-out end of the first layer battery is connected with the positive electrode leading-out end of the second layer battery.
The invention also provides a manufacturing method of the thin film laminated battery, which comprises the following steps: preparing a first layer of battery; preparing a second layer of battery; and stacking the first layer of cells and the second layer of cells.
As an improvement, the preparing a first layer battery comprises: depositing a light absorbing layer on a substrate; sequentially depositing a back buffer layer I and a back buffer layer II on the light absorption layer; scribing a plurality of parallel scribed lines I, wherein the scribed lines I penetrate through the substrate conducting layer, the light absorption layer, the back contact buffer layer I and the back contact buffer layer II; filling photoresist in the layer of scribed line I to form negative electrode segmentation; scribing a plurality of scribed lines II parallel to the scribed lines I, wherein one scribed line II penetrates through the light absorption layer and the back contact buffer layer I and the back contact buffer layer II; the layer of scribed lines I and the layer of scribed lines II are arranged in a staggered mode at intervals; filling molybdenum in the scribed line II to form a conductive channel; depositing a back electrode layer on the back contact buffer layer II; scribing a plurality of scribed lines III parallel to the scribed lines I, wherein the scribed lines III penetrate through the electrode layer, the back contact buffer layer II, the back contact buffer layer I and the light absorption layer to form positive electrode segmentation; the layer of scribed line III is arranged between the layer of scribed line I and the layer of scribed line II.
As an improvement, preparing the second layer of cells comprises: scribing a plurality of parallel two-layer scribed lines I on the substrate, wherein the two-layer scribed lines I penetrate through the conductive layer of the substrate to form positive electrode segmentation; depositing a hole transport layer on a substrate; depositing a light absorbing layer on the hole transport layer; scribing a plurality of two layers of scribed lines II parallel to the two layers of scribed lines I, wherein the two layers of scribed lines II penetrate through the hole transmission layer and the light absorption layer; the two layers of scribed lines I and the two layers of scribed lines II are arranged in a staggered mode at intervals; filling tin-doped indium oxide in the two layers of scribed lines II to form a conductive channel; depositing a back electrode layer on the light absorbing layer; scribing a plurality of two layers of scribed lines III parallel to the two layers of scribed lines I, wherein the two layers of scribed lines III penetrate through the light absorption layer and the back electrode layer to form negative electrode segmentation; (ii) a The two-layer scribed line III is arranged between the two-layer scribed line I and the two-layer scribed line II.
As an improvement, the stacking and bonding of the first layer cell and the second layer cell comprises: arranging a positive electrode leading-out end and a negative electrode leading-out end of the first layer of battery; setting a positive electrode leading-out end and a negative electrode leading-out end of the second layer of batteries; stacking the first layer of batteries and the second layer of batteries, wherein back electrode layers of the first layer of batteries and the second layer of batteries are opposite, and positive leading-out ends and negative leading-out ends of the first layer of batteries and the second layer of batteries are opposite; bonding the first layer of battery and the second layer of battery by using a transparent adhesive film; and connecting the negative electrode leading-out end of the first layer of battery with the positive electrode leading-out end of the second layer of battery.
The invention has the advantages that:
1. the invention can adopt the laser scribing interconnection technology of the thin-film solar cell production line, and is easier to realize the large-scale application of the large-area laminated cell compared with a crystalline silicon production line.
2. The invention adopts the four-terminal laminated cell structure, and the two sub-cells can be respectively kept at the maximum power point when the four-terminal laminated cell works, thereby reducing the limitation of the selection of the band gaps of the sub-cells,
3. compared with a unijunction component, the laminated component has stronger mechanical impact resistance, and provides a choice for photovoltaic curtain wall building materials.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
FIG. 2 is a flow chart of the present invention.
Detailed Description
In order that those skilled in the art will better understand the technical solutions of the present invention, the present invention will be further described in detail with reference to the following embodiments.
As shown in fig. 1, the present invention provides a thin film stacked solar cell, which includes a first layer cell 1 and a second layer cell 2 stacked; the first layer of cells 1 are selenium-doped cadmium telluride cells, and the second layer of cells 2 are perovskite cells; the selenium-doped cadmium telluride cell comprises a substrate 101, a light absorbing layer 104, a back contact buffer layer I105, a back contact buffer layer II106 and a back electrode layer 107 which are sequentially arranged; the perovskite battery comprises a substrate 201, a hole transport layer 203, a light absorption layer 204 and a back electrode layer 205 which are sequentially arranged; the back electrode layer 107 of the selenium-doped cadmium telluride cell is positioned opposite the back electrode layer 205 of the perovskite cell, and the negative electrode of the selenium-doped cadmium telluride cell is connected to the positive electrode of the perovskite cell.
The optimal band gap range of photovoltaic conversion of the existing solar cell is 1.2-1.5 eV, and the conversion efficiency is low. In the invention, the first layer of battery is a selenium-doped cadmium telluride battery, the band gap of the first layer of battery is 1.35 ev-1.43 ev, and the second layer of battery is a perovskite battery, the band gap of the second layer of battery is 1.6-2 ev, so that the band gap of the whole laminated solar battery is wider.
Specifically, the substrate 101 of the selenium-doped cadmium telluride cell is fluorine-doped conductive glass, the light absorption layer 104 is selenium-doped cadmium telluride, the back contact buffer layer I105 is intrinsic zinc telluride, the back contact buffer layer II106 is copper-doped zinc telluride, and the back electrode layer 107 is a molybdenum electrode. Additionally, the fluorine doped conductive glass has conductive layers, including a fluorine doped tin oxide glass conductive layer 102 and an intrinsic tin oxide glass conductive layer 103.
The substrate 201 of the perovskite battery is fluorine-doped conductive glass, the hole transport layer 203 is nickel oxide, the light absorption layer 204 is inorganic perovskite, and the back electrode layer 205 is a tin-doped indium oxide electrode. In addition, the fluorine-doped conductive glass is provided with a conductive layer, and the conductive layer is a fluorine-doped tin oxide glass conductive layer 202
The first layer of battery 1 and the second layer of battery 2 are respectively divided into a plurality of sub-batteries connected in series, specifically:
the first layer of battery 1 is divided into a plurality of sub-batteries by a layer of scribed line I110 and a layer of scribed line III112 which are longitudinally arranged; the layer of scribed line I110 and the layer of scribed line III112 are arranged in parallel at intervals in a staggered manner; the layer of scribed line I110 penetrates through the substrate conducting layer, the light absorption layer 104, the back contact buffer layer I105 and the back contact buffer layer II106 to reach the electrode layer 107, and photoresist is filled in the layer of scribed line I to form negative electrode segmentation in an insulating mode; the layer of scribed line III112 penetrates through the electrode layer 107, the back contact buffer layer II106, the back contact buffer layer I105 and the light absorption layer 104 to reach the substrate 101 to form positive electrode segmentation; a layer of scribing II111 is longitudinally arranged between each sub-battery, the scribing II111 penetrates through the light absorption layer 104 and the back contact buffer layer I105 and the back contact buffer layer II106 to reach the electrode layer, and molybdenum is filled in the scribing II111 to form a conductive channel.
The second layer of battery 2 is divided into a plurality of sub-batteries by a plurality of longitudinally-arranged second-layer scribed lines I208 and second-layer scribed lines III 210; the two-layer scribed line I208 and the two-layer scribed line III210 are arranged in parallel at intervals in a staggered manner; the two-layer scribing line I208 penetrates through the conducting layer 202 of the substrate 201 to reach the hole transport layer 203, and nickel oxide is filled in the two-layer scribing line I to form positive electrode segmentation; the two-layer scribed line III210 penetrates through the light absorbing layer 204 and the back electrode layer 205 to form negative electrode segmentation; and two layers of scribing lines II209 are longitudinally arranged between each sub-cell, the two layers of scribing lines II209 penetrate through the hole transport layer 203 and the light absorption layer 204 to reach the back electrode layer 205, and tin-doped indium oxide is filled in the hole transport layer 203 and the light absorption layer 204 to form a conductive channel.
The first layer of batteries 1 and the second layer of batteries 2 are bonded together by using a transparent adhesive film 300. The first layer cell 1 is provided with a positive electrode lead-out 109 and a negative electrode lead-out 108, and the second layer cell 2 is provided with a positive electrode lead-out 207 and a negative electrode lead-out 206; and positive and negative terminals 109 and 108 of the first layer cell 1 and positive and negative terminals 207 and 206 of the second layer cell 2 are opposed. The first layer cell negative terminal 108 is connected to the second layer cell positive terminal 207.
As shown in fig. 2, the present invention also provides a method for manufacturing a thin film stacked cell, including:
s1, preparing a first layer of battery;
s2, preparing a second layer battery;
s3 stacks the first layer cell and the second layer cell.
Wherein, the step S1 of preparing the first layer of battery specifically includes:
s11 depositing a light absorbing layer on the substrate; providing a first substrate FTO fluorine-doped tin oxide conductive glass, and depositing the light absorption layer CdSexTe1-x selenium-doped cadmium telluride by a near space sublimation method.
S12, sequentially depositing a back buffer layer I and a back buffer layer II on the light absorption layer by a magnetron sputtering deposition method;
s13, scribing a plurality of parallel layers of scribed lines I by using laser, wherein the layers of scribed lines I penetrate through the substrate conducting layer, the light absorbing layer, the back contact buffer layer I and the back contact buffer layer II;
s14 filling photoresist in the layer of scribed line I to form negative electrode segmentation; the photoresist is used for insulation.
S15, scribing a plurality of scribing lines II parallel to the scribing line I by using laser, wherein the scribing line II penetrates through the light absorption layer and the back contact buffer layer I and the back contact buffer layer II; the layer of scribed lines I and the layer of scribed lines II are arranged in a staggered mode at intervals;
s16 filling molybdenum in the scribed line II to form a conductive channel;
s17, depositing a back electrode layer on the back contact buffer layer II by adopting a magnetron sputtering deposition method;
s18 a plurality of layers of scribed lines III parallel to the scribed line I are scribed, and the scribed line III penetrates through the electrode layer, the back contact buffer layer II, the back contact buffer layer I and the light absorption layer to form positive electrode segmentation; the layer of scribed line III is arranged between the layer of scribed line I and the layer of scribed line II.
The step S2 of preparing the second layer battery specifically includes:
s21, scribing a plurality of parallel two-layer scribed lines I on the substrate by utilizing laser, wherein the two-layer scribed lines I penetrate through the substrate conductive layer to form positive electrode segmentation; and providing a second substrate FTO fluorine-doped tin oxide conductive glass, and scribing by using laser.
S22 depositing a hole transport layer on the substrate;
s23, depositing a light absorption layer on the hole transport layer by adopting a magnetron sputtering deposition method;
s24, scribing a plurality of two-layer scribed lines II parallel to the two-layer scribed line I by using laser, wherein the two-layer scribed lines II penetrate through the hole transmission layer and the light absorption layer; the two layers of scribed lines I and the two layers of scribed lines II are arranged in a staggered mode at intervals;
s25 filling tin-doped indium oxide in the two layers of scribe lines II to form a conductive channel;
s26, depositing a back electrode layer on the light absorption layer by adopting a magnetron sputtering deposition method;
s27, scribing a plurality of two-layer scribed lines III parallel to the two-layer scribed lines I by using laser, wherein the two-layer scribed lines III penetrate through the light absorption layer and the back electrode layer to form negative electrode segmentation; the two-layer scribed line III is arranged between the two-layer scribed line I and the two-layer scribed line II.
Step S3 is to stack the first layer of cells and the second layer of cells, specifically including:
s31 providing a positive terminal and a negative terminal of the first layer of cells;
s32 providing a positive terminal and a negative terminal of the second layer of cells;
s33, stacking the first layer of batteries and the second layer of batteries, wherein the back electrode layers of the first layer of batteries and the second layer of batteries are opposite when the first layer of batteries and the second layer of batteries are stacked, and the positive leading-out ends and the negative leading-out ends of the first layer of batteries and the second layer of batteries are opposite;
s34, bonding the first layer of battery and the second layer of battery by using a transparent adhesive film;
s35 connects the negative terminal of the first layer cell with the positive terminal of the second layer cell.
The above is only a preferred embodiment of the present invention, and it should be noted that the above preferred embodiment should not be considered as limiting the present invention, and the protection scope of the present invention should be subject to the scope defined by the claims. It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the spirit and scope of the invention, and these modifications and adaptations should be considered within the scope of the invention.
Claims (13)
1. A thin film laminated solar cell, characterized by: comprises a first layer of cells and a second layer of cells stacked; the first layer of cells are selenium-doped cadmium telluride cells, and the second layer of cells are perovskite cells; the selenium-doped cadmium telluride cell comprises a substrate, a light absorption layer, a back contact buffer layer I, a back contact buffer layer II and a back electrode layer which are sequentially arranged; the perovskite battery comprises a substrate, a hole transport layer, a light absorption layer and a back electrode layer which are sequentially arranged; the selenium-doped cadmium telluride cell is arranged opposite to the back electrode layer of the perovskite cell, and the negative electrode of the selenium-doped cadmium telluride cell is connected with the positive electrode of the perovskite cell.
2. The thin film laminated solar cell of claim 1, wherein: the substrate of the selenium-doped cadmium telluride cell is fluorine-doped conductive glass, the light absorption layer is selenium-doped cadmium telluride, the back contact buffer layer I is intrinsic zinc telluride, the back contact buffer layer II is copper-doped zinc telluride, and the back electrode layer is a molybdenum electrode.
3. The thin film laminated solar cell of claim 1, wherein: the substrate of the perovskite battery is fluorine-doped conductive glass, the hole transport layer is nickel oxide, the light absorption layer is inorganic perovskite, and the back electrode layer is a tin-doped indium oxide electrode.
4. The thin film laminated solar cell of claim 1, wherein: the first layer of battery and the second layer of battery are respectively divided into a plurality of sub-batteries connected in series.
5. The thin film laminated solar cell of claim 4, wherein: the first layer of battery is divided into a plurality of sub-batteries by utilizing a layer of scribed line I and a layer of scribed line III which are longitudinally arranged; the layer of scribed lines I and the layer of scribed lines III are parallel and arranged in a staggered mode at intervals; the scribed line I penetrates through the substrate conducting layer, the light absorption layer, the back contact buffer layer I and the back contact buffer layer II to reach the electrode layer, and photoresist is filled in the scribed line I to form negative electrode segmentation in an insulation mode; the scribed line III penetrates through the electrode layer, the back contact buffer layer II, the back contact buffer layer I and the light absorption layer to reach the substrate to form positive electrode segmentation; and a layer of scribed line II is longitudinally arranged between each sub-cell, penetrates through the light absorption layer and the back contact buffer layer I, reaches the electrode layer through the back contact buffer layer II, and is filled with molybdenum so as to form a conductive channel.
6. The thin film laminated solar cell of claim 4, wherein: the second layer of battery is divided into a plurality of sub-batteries by utilizing a plurality of longitudinally arranged second-layer scribed lines I and second-layer scribed lines III; the two layers of scribed lines I and the two layers of scribed lines III are arranged in parallel at intervals in a staggered manner; the two layers of scribed lines I penetrate through the substrate conducting layer to reach the hole transport layer, and nickel oxide is filled in the hole transport layer to form anode electrode segmentation; the two layers of scribed lines III penetrate through the light absorption layer and the back electrode layer to form negative electrode segmentation; and two layers of scribed lines II which are longitudinally arranged are arranged between each sub-cell, penetrate through the hole transport layer and the light absorption layer and reach the back electrode layer, and are filled with tin-doped indium oxide so as to form a conductive channel.
7. The thin film laminated solar cell of claim 1, wherein: the first layer of batteries and the second layer of batteries are bonded together by transparent adhesive films.
8. The thin film laminated solar cell of claim 1, wherein: the first layer of batteries is provided with a positive electrode leading-out end and a negative electrode leading-out end, and the second layer of batteries is provided with a positive electrode leading-out end and a negative electrode leading-out end; and the positive leading-out ends and the negative leading-out ends of the first layer of batteries and the second layer of batteries are opposite.
9. The thin film laminated solar cell of claim 8, wherein: and the negative leading-out end of the first layer of battery is connected with the positive leading-out end of the second layer of battery.
10. A method of manufacturing a thin film laminate battery, comprising:
preparing a first layer of battery;
preparing a second layer of battery;
and stacking the first layer of cells and the second layer of cells.
11. The method of claim 10, wherein the preparing the first layer of cells comprises:
depositing a light absorbing layer on a substrate;
sequentially depositing a back buffer layer I and a back buffer layer II on the light absorption layer;
scribing a plurality of parallel scribed lines I, wherein the scribed lines I penetrate through the substrate conducting layer, the light absorption layer, the back contact buffer layer I and the back contact buffer layer II;
filling photoresist in the layer of scribed line I to form negative electrode segmentation;
scribing a plurality of scribed lines II parallel to the scribed lines I, wherein one scribed line II penetrates through the light absorption layer and the back contact buffer layer I and the back contact buffer layer II; the layer of scribed lines I and the layer of scribed lines II are arranged in a staggered mode at intervals;
filling molybdenum in the scribed line II to form a conductive channel;
depositing a back electrode layer on the back contact buffer layer II;
scribing a plurality of scribed lines III parallel to the scribed lines I, wherein the scribed lines III penetrate through the electrode layer, the back contact buffer layer II, the back contact buffer layer I and the light absorption layer to form positive electrode segmentation; the layer of scribed line III is arranged between the layer of scribed line I and the layer of scribed line II.
12. The method of claim 10, wherein the step of preparing the second layer of battery comprises:
scribing a plurality of parallel two-layer scribed lines I on the substrate, wherein the two-layer scribed lines I penetrate through the conductive layer of the substrate to form positive electrode segmentation;
depositing a hole transport layer on a substrate;
depositing a light absorbing layer on the hole transport layer;
scribing a plurality of two layers of scribed lines II parallel to the two layers of scribed lines I, wherein the two layers of scribed lines II penetrate through the hole transmission layer and the light absorption layer; the two layers of scribed lines I and the two layers of scribed lines II are arranged in a staggered mode at intervals;
filling tin-doped indium oxide in the two layers of scribed lines II to form a conductive channel;
depositing a back electrode layer on the light absorbing layer;
scribing a plurality of two layers of scribed lines III parallel to the two layers of scribed lines I, wherein the two layers of scribed lines III penetrate through the light absorption layer and the back electrode layer to form negative electrode segmentation; the two-layer scribed line III is arranged between the two-layer scribed line I and the two-layer scribed line II.
13. The method of claim 10, wherein the step of stacking and bonding the first layer of cells and the second layer of cells comprises:
arranging a positive electrode leading-out end and a negative electrode leading-out end of the first layer of battery;
setting a positive electrode leading-out end and a negative electrode leading-out end of the second layer of batteries;
stacking the first layer of batteries and the second layer of batteries, wherein back electrode layers of the first layer of batteries and the second layer of batteries are opposite, and positive leading-out ends and negative leading-out ends of the first layer of batteries and the second layer of batteries are opposite;
bonding the first layer of battery and the second layer of battery by using a transparent adhesive film;
and connecting the negative electrode leading-out end of the first layer of battery with the positive electrode leading-out end of the second layer of battery.
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