CN115458616A - Double-sided power generation glass and manufacturing method thereof - Google Patents
Double-sided power generation glass and manufacturing method thereof Download PDFInfo
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- CN115458616A CN115458616A CN202211416949.0A CN202211416949A CN115458616A CN 115458616 A CN115458616 A CN 115458616A CN 202211416949 A CN202211416949 A CN 202211416949A CN 115458616 A CN115458616 A CN 115458616A
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- 239000011521 glass Substances 0.000 title claims abstract description 48
- 238000010248 power generation Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 238000010521 absorption reaction Methods 0.000 claims abstract description 43
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims abstract description 17
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 19
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 15
- 229910001887 tin oxide Inorganic materials 0.000 claims description 15
- 239000006096 absorbing agent Substances 0.000 claims description 14
- 239000011810 insulating material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 238000002202 sandwich sublimation Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011265 semifinished product Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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Abstract
The embodiment of the application provides double-sided power generation glass and a manufacturing method thereof, and relates to the technical field of photovoltaics. The double-sided power generation glass comprises at least one sub-cell structure, wherein the sub-cell structure comprises a transparent conductive layer, an absorption layer, a back contact buffer layer and a back electrode layer which are sequentially stacked; the absorption layer is selenium-doped cadmium telluride, the back electrode layer comprises a metal electrode and a P-type transparent conductive oxide layer, and the metal electrode and the P-type transparent conductive oxide layer are arranged in the same layer side by side. In the embodiment of the application, the back electrode layer consists of the metal electrode and the P-type transparent conductive oxide layer, so that the back electrode layer can not only efficiently collect photoproduction current, but also realize light transmission, and the unijunction cadmium telluride can realize double-sided light receiving power generation. The manufacturing method provided by the embodiment of the application is used for manufacturing the double-sided power generation glass.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to double-sided power generation glass and a manufacturing method thereof.
Background
The key point of developing the cadmium telluride double-sided light-receiving component is to develop a back electrode light-transmitting material, transparent conductive oxide is an option, and a back contact material capable of contacting with cadmium telluride needs to adopt P-type transparent conductive oxide, but the conductivity of the P-type transparent conductive oxide is not as high as that of a metal electrode. At present, schemes for realizing double-sided light transmission by replacing back electrode materials with NTO glass doped with indium oxide N or tungsten doped indium oxide and other P-type transparent conductive layers are researched, but the schemes all have the problems that the contact resistance of cadmium telluride and transparent conductive oxides is high and the energy loss is serious.
Disclosure of Invention
The application aims to provide double-sided power generation glass and a manufacturing method thereof, which can improve the problem of high contact resistance between a back electrode layer and cadmium telluride while realizing double-sided light transmission.
The embodiment of the application can be realized as follows:
in a first aspect, the application provides double-sided power generation glass, which comprises at least one sub-cell structure, wherein the sub-cell structure comprises a transparent conductive layer, an absorption layer, a back contact buffer layer and a back electrode layer which are sequentially stacked;
the absorption layer is selenium-doped cadmium telluride, the back electrode layer comprises a metal electrode and a P-type transparent conductive oxide layer, and the metal electrode and the P-type transparent conductive oxide layer are arranged in the same layer side by side.
In an alternative embodiment, the double-sided power generating glass includes at least two sub-cell structures, the sub-cell structures including a first trench and a second trench;
the first groove penetrates through the back contact buffer layer and the absorption layer, so as to extend from the surface of the metal electrode to the surface of the transparent conducting layer; the first groove is filled with a metal material to form a conductive part, and the conductive part electrically connects the metal electrode with the transparent conductive layer of the adjacent sub-cell structure;
the second groove penetrates through the back contact buffer layer, the absorption layer and the transparent conducting layer, insulating materials are filled in the second groove, and the insulating materials separate the transparent conducting layers of the two adjacent sub-cell structures;
and a third groove is formed between two adjacent sub-cell structures, and the back electrode layer, the back contact buffer layer and the absorption layer of the two adjacent sub-cell structures are separated by the third groove.
In an alternative embodiment, the metal electrode is a molybdenum electrode.
In an optional embodiment, the back contact buffer layer includes an intrinsic zinc telluride layer and a copper-doped zinc telluride layer stacked, the copper-doped zinc telluride layer contacts the back electrode layer, and the intrinsic zinc telluride layer contacts the absorption layer.
In an alternative embodiment, the transparent conductive layer comprises a layered arrangement of an intrinsic tin oxide layer and a fluorine-doped tin oxide layer, the intrinsic tin oxide layer contacting the absorber layer.
In an alternative embodiment, the double-sided power generation glass further comprises a transparent substrate, and the transparent substrate is arranged on one side of the transparent conductive layer, which faces away from the absorption layer.
In a second aspect, the present application provides a method for manufacturing double-sided power generation glass, comprising:
providing a transparent conductive layer;
manufacturing an absorption layer on the transparent conductive layer;
manufacturing a back contact buffer layer on the absorption layer;
and depositing a metal electrode and a P-type transparent conductive oxide layer on the back contact buffer layer to form a back electrode layer, wherein the metal electrode and the P-type transparent conductive oxide layer are arranged side by side in the same layer.
In an alternative embodiment, before depositing the metal electrode and the P-type transparent conductive oxide layer, the fabrication method further includes:
a first groove and a second groove are formed in the surface of the back contact buffer layer, the first groove penetrates through the back contact buffer layer and the absorption layer and extends to the transparent conductive layer, and the second groove penetrates through the back contact buffer layer, the absorption layer and the transparent conductive layer;
filling an insulating material in the second groove;
respectively depositing a metal electrode and a P-type transparent conductive oxide layer on the back contact buffer layer, comprising:
depositing a metal material at a position corresponding to the first groove by using a mask plate to form a conductive part filled in the first groove and a metal electrode positioned on the back contact buffer layer;
depositing a P-type transparent conductive oxide layer on the back contact buffer layer in the region where the metal electrode is not deposited by using a mask to form a back electrode layer;
and a third groove is formed in the surface of the back electrode layer, penetrates through the P-type transparent conductive oxide layer, the back contact buffer layer and the absorption layer of the back electrode layer and extends to the surface of the transparent conductive layer.
In an alternative embodiment, the first trench, the second trench, and the third trench are formed using laser scribing.
In an alternative embodiment, the metallic material is molybdenum.
In an alternative embodiment, the step of fabricating an absorber layer on the transparent conductive layer comprises:
selenium-doped cadmium telluride is deposited on the transparent conductive layer using a close space sublimation process to form an absorber layer.
In an alternative embodiment, the step of fabricating a back contact buffer layer on the absorber layer comprises:
depositing an intrinsic zinc telluride layer on the absorption layer;
and depositing a copper-doped zinc telluride layer on the intrinsic zinc telluride layer.
The beneficial effects of the embodiment of the application include, for example:
the double-sided power generation glass provided by the embodiment of the application comprises at least one sub-cell structure, wherein the sub-cell structure comprises a transparent conducting layer, an absorption layer, a back contact buffer layer and a back electrode layer which are sequentially stacked; the absorption layer is selenium-doped cadmium telluride, the back electrode layer comprises a metal electrode and a P-type transparent conductive oxide layer, and the metal electrode and the P-type transparent conductive oxide layer are arranged in the same layer side by side. In the embodiment of the application, the back electrode layer consists of the metal electrode and the P-type transparent conductive oxide layer, so that the back electrode layer can not only efficiently collect photoproduction current, but also realize light transmission, and the unijunction cadmium telluride can realize double-sided light receiving power generation.
The manufacturing method provided by the embodiment of the application is used for manufacturing the double-sided power generation glass.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic view of a double-sided power generating glass according to an embodiment of the present disclosure;
FIG. 2 is a flow chart of a method for manufacturing double-sided power generation glass according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of a double-sided power generating glass (semi-finished product) before forming a first trench and a second trench in an embodiment of the present invention;
FIG. 4 is a schematic view of a double-sided power generating glass (semi-finished product) after forming a first trench and a second trench according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of a double-sided power generating glass (semi-finished product) after filling the first trench and the second trench in an embodiment of the present application.
An icon: 010-double-sided power generation glass; 100-subcell configuration; 110-a transparent substrate; 120-a transparent conductive layer; 121-intrinsic tin oxide layer; 122-fluorine-doped tin oxide layer; 130-an absorbent layer; 140-back contact buffer layer; 141-intrinsic zinc telluride layer; 142-a copper-doped zinc telluride layer; 150-back electrode layer; 151-metal electrode; a 152-P type transparent conductive oxide layer; 160-a first trench; 161-a conductive portion; 170-second trenches; 171-an insulating material; 180-third trenches.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.
In the description of the present application, it should be noted that if the terms "upper", "lower", "inner", "outer", etc. are used to indicate an orientation or positional relationship based on an orientation or positional relationship shown in the drawings or an orientation or positional relationship which is usually placed when the product of the present invention is used, the description is merely for convenience of description and simplification, but the indication or suggestion that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
Fig. 1 is a schematic view of a double-sided power generation glass 010 according to an embodiment of the present application. As shown in fig. 1, the double-sided power generation glass 010 provided in the embodiment of the present application has a multilayer structure as a whole, and is divided into a plurality of sub-battery structures 100 (divided by dotted lines in the figure) by the grooves, so that the single sub-battery structure 100 is also a multilayer structure. The sub-cell structure 100 includes a transparent conductive layer 120, an absorption layer 130, a back contact buffer layer 140, and a back electrode layer 150, which are sequentially stacked. In this embodiment, the double-sided power generation glass 010 further includes a transparent substrate 110, and the transparent substrate 110 is disposed on a side of the transparent conductive layer 120 away from the absorption layer 130, so as to perform functions of light transmission and protection. The transparent substrate 110 may be non-conductive glass. Each subcell structure 100 shares a complete transparent substrate 110.
The plurality of sub-cell structures 100 are arranged in an array on the same plane and are connected in series, that is, the back electrode layer 150 of one sub-cell structure 100 is electrically connected to the transparent conductive layer 120 of the adjacent sub-cell structure 100 (in this embodiment, electrically connected through the conductive part 161).
In the embodiment of the present application, the absorption layer 130 is selenium-doped cadmium telluride, the back electrode layer 150 includes a metal electrode 151 and a P-type transparent conductive oxide layer 152, and the metal electrode 151 and the P-type transparent conductive oxide layer 152 are juxtaposed in the same layer. The back electrode layer 150 containing the P-type transparent conductive oxide layer 152 serves as the positive electrode of the subcell structure 100, while the transparent conductive layer 120 serves as the negative electrode of the subcell structure 100. In the sub-cell structure 100, a current flows through the transparent conductive layer 120, the absorption layer 130, the back contact buffer layer 140, the P-type transparent conductive oxide layer 152, and the metal electrode 151 in sequence. And the metal electrode 151 is electrically connected to the transparent conductive layer 120 of the adjacent sub-cell structure 100 through the conductive portion 161, thereby achieving the series connection of the sub-cell structures 100.
In the present embodiment, the subcell structure 100 includes a first trench 160 and a second trench 170. The first trench 160 penetrates through the back contact buffer layer 140 and the absorber layer 130, so as to extend from the surface of the metal electrode 151 to the surface of the transparent conductive layer 120; the first trench 160 is filled with a metal material to form a conductive portion 161, and the conductive portion 161 electrically connects the metal electrode 151 and the transparent conductive layer 120 of the adjacent sub-cell structure 100. In this embodiment, the conductive portion 161 and the metal electrode 151 are made of the same material, and molybdenum may be selected. The conductive portions 161 serve the purpose of connecting adjacent sub-cell structures 100. The second trench 170 penetrates through the back contact buffer layer 140, the absorption layer 130 and the transparent conductive layer 120, the second trench 170 is filled with an insulating material 171, and the insulating material 171 separates the transparent conductive layers 120 of two adjacent subcell structures 100. Therefore, in the present embodiment, the cathodes of two adjacent subcell structures 100 are separated by the second trench 170 and the insulating material 171. The insulating material 171 may be photoresist.
A third trench 180 is formed between two adjacent sub-cell structures 100, and the back electrode layer 150, the back contact buffer layer 140, and the absorber layer 130 of the two adjacent sub-cell structures 100 are separated by the third trench 180. It can be seen that the third trench 180 functions to separate the positive electrodes of the adjacent two sub-cell structures 100. Due to the separation function of the second and third grooves 170, 180, and the conduction function of the first groove 160 and the conductive portion 161, current flows in the double-sided power generation glass 010 in a winding manner. The direction of the straight arrows in fig. 1 is the direction of current flow.
In this embodiment, the back contact buffer layer 140 includes an intrinsic zinc telluride layer 141 and a copper-doped zinc telluride layer 142 stacked, the copper-doped zinc telluride layer 142 contacts the back electrode layer 150, and the intrinsic zinc telluride layer 141 contacts the absorber layer 130.
Optionally, the transparent conductive layer 120 includes an intrinsic tin oxide layer 121 and a fluorine-doped tin oxide layer 122 stacked, the intrinsic tin oxide layer 121 contacting the absorption layer 130, and the fluorine-doped tin oxide layer 122 contacting the transparent substrate 110. The transparent conductive layer 120 and the transparent substrate 110 may be integrally formed as a transparent conductive glass.
Compared with the prior art in which the metal back electrode is completely replaced by the transparent conductive oxide, the back electrode layer 150 formed by combining the metal electrode 151 and the P-type transparent conductive oxide layer 152 in the embodiment of the present application can improve the conductivity of the back electrode layer 150 and improve the problem of high contact resistance between the cadmium telluride and the back electrode layer 150 on the premise of maintaining light permeability. Since the conductive portion 161 is entirely metal, the series resistance between the sub-cell structures 100 is low.
FIG. 2 is a flow chart illustrating a method for manufacturing the double-sided power generation glass 010 according to an embodiment of the present application; fig. 3 to 5 are schematic diagrams illustrating different states of the double-sided power generation glass 010 in a manufacturing process according to an embodiment of the present application. As shown in fig. 2 to fig. 5, the method for manufacturing the double-sided power generation glass 010 according to the embodiment of the present application may be used to manufacture the double-sided power generation glass 010 according to the embodiment. The manufacturing method of the double-sided power generation glass 010 comprises the following steps:
in step S100, a transparent conductive layer 120 is provided.
In the present embodiment, the transparent conductive layer 120 may be laid on the transparent substrate 110, and provided as a transparent conductive glass together with the transparent substrate 110. Specifically, the transparent conductive layer 120 includes a fluorine-doped tin oxide layer 122 disposed on the transparent substrate 110 and an intrinsic tin oxide layer 121 disposed on the fluorine-doped tin oxide layer 122.
In step S200, an absorption layer 130 is formed on the transparent conductive layer 120.
In the present embodiment, selenium-doped cadmium telluride can be deposited on the transparent conductive layer 120 using a near space sublimation process to form the absorber layer 130.
In step S300, a back contact buffer layer 140 is formed on the absorber layer 130.
In the present embodiment, the back contact buffer layer 140 may be deposited on the absorber layer 130 using a magnetron sputtering deposition method. The back contact buffer layer 140 includes an intrinsic zinc telluride layer 141 and a copper-doped zinc telluride layer 142, and the intrinsic zinc telluride layer 141 may be formed on the absorption layer 130 by sputtering deposition, and the copper-doped zinc telluride layer 142 may be formed on the intrinsic zinc telluride layer 141 by sputtering deposition. A structure as shown in fig. 3 is obtained.
Step S400, depositing a metal electrode 151 and a P-type transparent conductive oxide layer 152 on the back contact buffer layer 140 to form a back electrode layer 150, wherein the metal electrode 151 and the P-type transparent conductive oxide layer 152 are in the same layer side by side.
In order to form a plurality of series-connected subcell structures 100, it is therefore necessary to scribe trenches prior to forming the back electrode layer 150. Specifically, a first trench 160 and a second trench 170 are opened on the surface of the back contact buffer layer 140, the first trench 160 penetrates through the back contact buffer layer 140 and the absorber layer 130 and extends to the transparent conductive layer 120, and the second trench 170 penetrates through the back contact buffer layer 140, the absorber layer 130 and the transparent conductive layer 120, so as to obtain the structure shown in fig. 4.
The second trench 170 is then filled with an insulating material 171. Then, a metal material is deposited at a position corresponding to the first trench 160 by using a mask to form a conductive portion 161 filling the first trench 160 and a metal electrode 151 on the back contact buffer layer 140. In this embodiment, the selected metal material is molybdenum. Then, a P-type transparent conductive oxide layer 152 is deposited on the back contact buffer layer 140 at a region where the metal electrode 151 is not deposited using a mask to form the back electrode layer 150. A structure as shown in fig. 5 is obtained. It should be understood that in alternative embodiments, the metal electrode 151 and the conductive portion 161 may be directly deposited after the first trench 160 is scribed, and then the second trench 170 is scribed and filled with the insulating material 171 (or the order of deposition of the metal electrode 151 and the filled insulating material 171 is reversed).
Finally, a third trench 180 (see fig. 1) is opened on the surface of the back electrode layer 150, and the third trench 180 penetrates through the P-type transparent conductive oxide layer 152, the back contact buffer layer 140, and the absorption layer 130 of the back electrode layer 150 and extends to the surface of the transparent conductive layer 120. Finally, the double-sided power generation glass 010 of the embodiment of the present application is obtained.
Alternatively, the first groove 160, the second groove 170, and the third groove 180 may be formed using laser scribing.
To sum up, the double-sided power generation glass 010 provided in the embodiment of the present application includes at least one sub-cell structure 100, where the sub-cell structure 100 includes a transparent conductive layer 120, an absorption layer 130, a back contact buffer layer 140, and a back electrode layer 150, which are sequentially stacked; the absorption layer 130 is selenium-doped cadmium telluride, the back electrode layer 150 includes a metal electrode 151 and a P-type transparent conductive oxide layer 152, and the metal electrode 151 and the P-type transparent conductive oxide layer 152 are disposed side by side in the same layer. In the embodiment of the present application, the back electrode layer 150 is composed of the metal electrode 151 and the P-type transparent conductive oxide layer 152, so that the back electrode layer 150 can not only collect the photo-generated current efficiently, but also realize light transmission, and thus the single junction cadmium telluride realizes double-sided light receiving power generation. The manufacturing method provided by the embodiment of the application is used for manufacturing the double-sided power generation glass 010.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (12)
1. The double-sided power generation glass is characterized by comprising at least one sub-cell structure, wherein the sub-cell structure comprises a transparent conducting layer, an absorption layer, a back contact buffer layer and a back electrode layer which are sequentially stacked;
the absorption layer is selenium-doped cadmium telluride, the back electrode layer comprises a metal electrode and a P-type transparent conductive oxide layer, and the metal electrode and the P-type transparent conductive oxide layer are arranged in the same layer side by side.
2. The double-sided power generating glass according to claim 1, wherein the double-sided power generating glass comprises at least two of the sub-cell structures, the sub-cell structures comprising a first trench and a second trench;
the first groove penetrates through the back contact buffer layer and the absorption layer, so as to extend from the surface of the metal electrode to the surface of the transparent conductive layer; the first grooves are filled with metal materials to form conductive parts, and the conductive parts electrically connect the metal electrodes and the transparent conductive layers of the adjacent sub-cell structures;
the second groove penetrates through the back contact buffer layer, the absorption layer and the transparent conducting layer, an insulating material is filled in the second groove, and the insulating material separates the transparent conducting layers of two adjacent subcell structures;
a third groove is formed between two adjacent sub-cell structures, and the back electrode layer, the back contact buffer layer and the absorption layer of the two adjacent sub-cell structures are separated by the third groove.
3. The double-sided power generating glass according to claim 1, wherein the metal electrode is a molybdenum electrode.
4. The double-sided power generation glass according to claim 1, wherein the back contact buffer layer comprises an intrinsic zinc telluride layer and a copper-doped zinc telluride layer which are stacked, the copper-doped zinc telluride layer contacts the back electrode layer, and the intrinsic zinc telluride layer contacts the absorption layer.
5. The double-sided power generation glass according to claim 1, wherein the transparent conductive layer comprises a layered intrinsic tin oxide layer and a fluorine-doped tin oxide layer, the intrinsic tin oxide layer contacting the absorber layer.
6. The double-sided power generation glass according to claim 1, further comprising a transparent substrate disposed on a side of the transparent conductive layer facing away from the absorption layer.
7. A manufacturing method of double-sided power generation glass is characterized by comprising the following steps:
providing a transparent conductive layer;
manufacturing an absorption layer on the transparent conductive layer;
manufacturing a back contact buffer layer on the absorption layer;
and depositing a metal electrode and a P-type transparent conductive oxide layer on the back contact buffer layer to form a back electrode layer, wherein the metal electrode and the P-type transparent conductive oxide layer are arranged in the same layer side by side.
8. The method for manufacturing double-sided power generation glass according to claim 7, wherein before depositing the metal electrode and the P-type transparent conductive oxide layer, the method further comprises:
forming a first groove and a second groove on the surface of the back contact buffer layer, wherein the first groove penetrates through the back contact buffer layer and the absorption layer and extends to the transparent conductive layer, and the second groove penetrates through the back contact buffer layer, the absorption layer and the transparent conductive layer;
filling an insulating material in the second trench;
respectively depositing a metal electrode and a P-type transparent conductive oxide layer on the back contact buffer layer, comprising:
depositing a metal material at a position corresponding to the first groove by using a mask to form a conductive part filled in the first groove and the metal electrode positioned on the back contact buffer layer;
depositing the P-type transparent conductive oxide layer on the back contact buffer layer in the region where the metal electrode is not deposited by using a mask to form the back electrode layer;
and arranging a third groove on the surface of the back electrode layer, wherein the third groove penetrates through the P-type transparent conductive oxide layer, the back contact buffer layer and the absorption layer of the back electrode layer and extends to the surface of the transparent conductive layer.
9. The method for manufacturing double-sided power generation glass according to claim 8, wherein the first groove, the second groove, and the third groove are formed by laser scribing.
10. The method for manufacturing double-sided power generation glass according to claim 8, wherein the metal material is molybdenum.
11. The method for manufacturing double-sided power generation glass according to claim 7, wherein the step of manufacturing an absorption layer on the transparent conductive layer comprises:
selenium-doped cadmium telluride is deposited on the transparent conductive layer using a close space sublimation process to form the absorber layer.
12. The method for manufacturing double-sided power generation glass according to claim 7, wherein the step of manufacturing a back contact buffer layer on the absorption layer comprises:
depositing an intrinsic zinc telluride layer on the absorption layer;
and depositing and forming a copper-doped zinc telluride layer on the intrinsic zinc telluride layer.
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