CN114156364A - Preparation method of CdTe power generation glass and charging control system - Google Patents
Preparation method of CdTe power generation glass and charging control system Download PDFInfo
- Publication number
- CN114156364A CN114156364A CN202111350615.3A CN202111350615A CN114156364A CN 114156364 A CN114156364 A CN 114156364A CN 202111350615 A CN202111350615 A CN 202111350615A CN 114156364 A CN114156364 A CN 114156364A
- Authority
- CN
- China
- Prior art keywords
- cdte
- power generation
- glass
- solar cell
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 105
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 99
- 238000010248 power generation Methods 0.000 title claims abstract description 86
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000003860 storage Methods 0.000 claims description 22
- 238000012544 monitoring process Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 9
- 238000010329 laser etching Methods 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 6
- 238000004146 energy storage Methods 0.000 abstract description 6
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/007—Regulation of charging or discharging current or voltage
- H02J7/00712—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method and a charging control system of CdTe power generation glass, wherein the preparation method comprises the following steps: step 1, determining the geometric size of CdTe generating glass according to the working voltage of a product to be charged, and determining the number of sub-batteries in the CdTe generating glass; step 2, preparing a thin-film solar cell panel with the area S; step 3, edge cleaning and cutting are carried out on the thin-film solar cell panel to obtain a sub-cell of CdTe power generation glass; and 4, assembling the sub-batteries to obtain the CdTe power generation glass. According to the invention, the output voltage of the photovoltaic module can be flexibly adjusted according to the requirements of users, the charging requirements of different low-voltage products to be charged are met, and the adaptability of the CdTe generating glass is improved; the CdTe power generation glass solves the problems that the working voltage of CdTe power generation glass is higher than that of the conventional energy storage element, and the large-scale production of the CdTe power generation glass with the working voltage matched with the working voltage is lacked.
Description
Technical Field
The invention belongs to the field of photovoltaic power generation assembly production, and particularly relates to a preparation method of CdTe power generation glass and a charging control system.
Background
With the continuous maturity of photovoltaic power generation technology, the traditional centralized power generation gradually becomes decentralized and distributed power generation and utilization, so that the human beings can freely realize the energy utilization mode. In the prior art, distributed photovoltaic power generation systems can be divided into grid-connected type and off-grid type. The grid-connected type is that direct current generated by a system is converted into alternating current and is connected to a power grid; the off-grid photovoltaic power generation system is self-operated and self-used, can be consumed on the spot and is flexible to use. The off-grid solar power generation equipment converts solar energy into electric energy by utilizing the solar cell panel under the condition of illumination, supplies power to a load through the solar charging and discharging controller, and simultaneously charges the storage battery; and in cloudy days or no illumination, the storage battery supplies power to the direct current load through the solar charging and discharging controller.
In the prior art, a charging device manufactured by taking a crystalline silicon solar cell as an off-grid type solar power generation is formed by externally connecting different silicon wafers, the size of each wafer is large (156mm x 156mm), and the working voltage of 1 single crystal silicon is about 0.6V by taking single crystal silicon as an example. Larger areas of single crystal silicon are needed to make devices that meet the charging requirements. The CdTe generating glass is of a layered structure and can be flexibly adjusted to carry out cutting treatment, so that the electrical property output of the CdTe generating glass with a small area is controlled.
Therefore, the cadmium telluride power generation glass is needed to be designed, the output voltage of the photovoltaic module is flexibly adjusted according to the requirements of users, and the charging requirements of different low-voltage products to be charged are met; and a control circuit matched with the control circuit is designed to realize the control of the energy storage element.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to provide a preparation method of CdTe power generation glass.
The technical scheme adopted by the invention is as follows: a preparation method of CdTe power generation glass comprises the following steps:
step 1, determining the geometric size of CdTe generating glass according to the working voltage of a product to be charged, and determining the number of sub-batteries in the CdTe generating glass;
step 2, preparing a thin-film solar cell panel with the area S;
step 3, edge cleaning and cutting are carried out on the thin-film solar cell panel to obtain a sub-cell of CdTe power generation glass;
and 4, assembling the sub-batteries to obtain the CdTe power generation glass.
As an alternative of the present invention, in step 2, the preparing of the thin film solar cell panel with the area S includes: depositing a front electrode layer on a glass substrate, etching the front electrode layer by laser to obtain a first channel, depositing a power generation layer on the front electrode layer, etching the power generation layer by laser to obtain a second channel, depositing a back electrode layer on the power generation layer, filling the back electrode layer into the second channel and covering the surface of the power generation layer, and etching the back electrode layer and the power generation layer by laser to obtain a third channel; and arranging a drainage bar and a bus bar on the back electrode layer, and arranging a packaging layer on the back electrode layer to obtain the thin-film solar cell panel.
As an alternative of the present invention, in step 2, the thin film solar cell panel is designed into m CdTe power generating glasses, where S ═ c × d, m ═ S/(a × b), a and b are respectively the length and width of the thin film solar cell panel, c and d are respectively the length and width of the CdTe power generating glass, and n sub-cells with an area of L are included in one CdTe power generating glass, where n ═ V/Vpm, L ═ L/n) b, V is a charging voltage of a product to be charged, Vpm is an operating voltage of the CdTe power generating glass, and K is a matching coefficient, and a value range is 1-2.
As an alternative of the present invention, in step 3, the sub-cell for obtaining CdTe power generation glass by performing edge deletion and cutting on the thin film solar cell panel includes: and (2) removing the film layer at the edge of the thin-film solar cell plate, wherein the edge is removed by adopting laser etching, the laser galvanometer scanning system is used for focusing, and the speed of scanning the galvanometer is as follows: 5500-7100mm/s, the moving speed of the thin-film solar cell panel is as follows: 200-300mm/s, the adjustable range set for the clear edge width is as follows: 7-16mm, and the distance between the edge of the clear edge and the second channels on the two sides of the thin-film solar cell panel is 3-4 mm.
As an alternative of the invention, in the step 4, assembling each battery to obtain the CdTe power generation glass comprises the following steps: the sub-batteries are connected in series through the second internal channel, and the bus conductive strip is arranged to be connected with the electrodes of the sub-batteries; and coating sealant on the periphery of the sub-battery for insulation, and packaging the sub-battery to obtain the CdTe power generation glass.
As an alternative of the invention, the bus conductive tape is a conductive Ag paste or a copper-tin solder tape.
As an alternative of the invention, the encapsulating layer is PVB, TPT or PZT.
The invention also aims to provide a charging control system of the CdTe power generation glass, which comprises the CdTe power generation glass prepared by the preparation method and a charging assembly, wherein the charging assembly is connected with the CdTe power generation glass, and the charging assembly is connected with a product to be charged.
As an alternative of the present invention, the charging assembly includes a storage battery, a charging state monitoring circuit and a discharging state monitoring circuit, the charging state monitoring circuit and the discharging state monitoring circuit are both connected with the storage battery, and the storage battery is connected with a product to be charged. In the daytime, the 24V storage battery is powered by the CdTe generating glass, the voltage and current stabilizing and reverse charging and discharging preventing functions are achieved, the light emitting diode of the charging state monitoring circuit is on, and the light emitting diode of the discharging state monitoring circuit is not on. At night, the 24V storage battery discharges the products to be charged, the function of over-discharge prevention is achieved, meanwhile, the 24V storage battery is controlled to be charged or discharged according to the voltage of the CdTe power generation glass, and the purpose of discharging through the 24V storage battery at night is achieved. The light emitting diode of the charging state monitoring circuit is not on, and the light emitting diode of the discharging state monitoring circuit is on. The control circuit has good control effect, meets the requirements of functions and is low in cost.
The invention has the beneficial effects that:
the invention provides a preparation method and a charge control system of CdTe power generation glass, which can flexibly adjust the output voltage of a photovoltaic module according to the requirements of users, meet the charge requirements of different low-voltage products to be charged and improve the adaptability of the CdTe power generation glass; the CdTe power generation glass solves the problems that the working voltage of CdTe power generation glass is higher than that of the conventional energy storage element, and the large-scale production of the CdTe power generation glass with the working voltage matched with the working voltage is lacked.
Drawings
FIG. 1 is a cross-sectional view of a CdTe power generating glass provided by the invention;
FIG. 2 is a top view of a CdTe power generating glass provided in the invention;
FIG. 3 is a graph of output voltage versus charging circuit for the same irradiance of the present invention;
FIG. 4 is a schematic view of the structure of the charge control system of CdTe power generating glass in the present invention;
FIG. 5 is a schematic circuit diagram of a CdTe power glass charge control system in the present invention;
in the figure: 1-a glass substrate; 2-a front electrode layer; 3-a first channel; 4-a power generation layer; 5-a second channel; 6-a back electrode layer; 7-a third channel; 8-an encapsulation layer; 9-CdTe electricity generating glass; 10-sealing the box.
Detailed Description
Examples
With the continuous maturity of photovoltaic power generation technology, the traditional centralized power generation gradually becomes decentralized and distributed power generation and utilization, so that the human beings can freely realize the energy utilization mode. In the prior art, distributed photovoltaic power generation systems can be divided into grid-connected type and off-grid type. The grid-connected type is that direct current generated by a system is converted into alternating current and is connected to a power grid; the off-grid photovoltaic power generation system is self-operated and self-used, can be consumed on the spot and is flexible to use. The off-grid solar power generation equipment converts solar energy into electric energy by utilizing the solar cell panel under the condition of illumination, supplies power to a load through the solar charging and discharging controller, and simultaneously charges the storage battery; and in cloudy days or no illumination, the storage battery supplies power to the direct current load through the solar charging and discharging controller.
In the prior art, a charging device manufactured by taking a crystalline silicon solar cell as an off-grid type solar power generation is formed by externally connecting different silicon wafers, the size of each wafer is large (156mm x 156mm), and the working voltage of 1 single crystal silicon is about 0.6V by taking single crystal silicon as an example. Larger areas of single crystal silicon are needed to make devices that meet the charging requirements. The CdTe generating glass is of a layered structure and can be flexibly adjusted to carry out cutting treatment, so that the electrical property output of the CdTe generating glass with a small area is controlled. Therefore, the cadmium telluride power generation glass is needed to be designed, the output voltage of the photovoltaic module is flexibly adjusted according to the requirements of users, and the charging requirements of different low-voltage products to be charged are met; and a control circuit matched with the control circuit is designed to realize the control of the energy storage element.
The embodiment provides a preparation method of CdTe generating glass, which can determine the charging voltage range of CdTe generating glass 9 according to the voltage (V) of a required charging product, and simultaneously, the effective size of the CdTe generating glass 9 is designed by combining the size of the charging product, so that the purposes of attractive appearance and convenient carrying of a thin film solar cell are realized, and the preparation method specifically comprises the following steps:
step 1, determining the geometric size of the CdTe generating glass 9 according to the working voltage of a product to be charged, and determining the number of sub-batteries in the CdTe generating glass 9. Specifically, the CdTe solar energy generating glass 9 is designed according to the working voltage of the charging product required by the user, and the size of the required charging product is combined. The relationship between the charging voltage of the product to be charged and the working voltage output by the CdTe power generating glass 9 can be obtained through an irradiation experiment, and the irradiation experiment data of the CdTe power generating glass 9 used in the invention is shown in FIG. 3. The charging working voltage of the product to be charged with 5V is obtained by data processing: 8-10V; the charging working voltage of the 24V product to be charged is as follows: 27-30V. The invention can be matched with the photovoltaic module according to the charging curve of the energy storage device under the standard light intensity, so that the performance of the CdTe power generation glass 9 is ensured.
Step 2, preparing a thin-film solar cell panel with the area S, which specifically comprises the following steps: depositing a front electrode layer 2 on a glass substrate 1, obtaining a first channel 3 by laser etching the front electrode layer 2, depositing a power generation layer 4 on the front electrode layer 2, obtaining a second channel 5 by laser etching the power generation layer 4, depositing a back electrode layer 6 on the power generation layer 4, filling the back electrode layer 6 into the second channel 5 and covering the surface of the power generation layer 4, and then obtaining a third channel 7 by laser etching the back electrode layer 6 and the power generation layer 4; and arranging a current guide bar and a bus bar on the back electrode layer 6, and arranging a packaging layer 8 on the back electrode layer 6 to obtain a thin-film solar cell panel, wherein the structure of the thin-film solar cell panel is shown in fig. 1 and 2.
The thin-film solar cell panel is designed into m pieces of CdTe power generation glass 9, wherein S is c d, m is S/(a b), a and b are respectively the length and the width of the thin-film solar cell panel, c and d are respectively the length and the width of the CdTe power generation glass 9, n sub-cells with the area of L are contained in one piece of CdTe power generation glass 9, n is (V/Vpm) K, L is (a/n) b, V is the charging voltage of a product to be charged, Vpm is the working voltage of the CdTe power generation glass 9, K is a matching coefficient, and the value range is 1-2.
Etching in the thin-film solar cell panel: n × c/a first trenches 3, m × n second trenches 5, n × c/a third trenches 7, and the positional relationship of the respective trenches is shown in fig. 1.
Step 3, after chip testing and screening, performing edge cleaning and cutting on the thin-film solar cell panel with the area S to obtain the sub-cell of the CdTe power generation glass 9, which specifically comprises the following steps: clear away the rete at thin-film solar cell flange edge, prevent the short circuit, clear limit adopts laser etching, utilizes the focusing of laser galvanometer scanning system, and the speed of scanning galvanometer is: 5500-7100mm/s, the moving speed of the thin-film solar cell panel is as follows: 200-300mm/s, the adjustable range set for the clear edge width is as follows: 7-16mm, and the distance between the edge of the clear edge and the second channels 5 on the two sides of the thin-film solar cell panel is 3-4mm, so that confluence is facilitated.
Step 4, assembling each sub-battery to obtain CdTe power generation glass 9, which specifically comprises the following steps: the sub-batteries are connected in series through the second channel 5 inside, a confluence conductive belt is arranged to be connected with the electrodes of the sub-batteries, and the CdTe generating glass 9 conducts current into a product to be charged through the confluence conductive belt to charge. And coating a sealant around the sub-cells for insulation, and packaging the sub-cells to obtain the CdTe power generation glass 9, namely arranging an insulation frame around the n series sub-cells for wrapping, so as to ensure the integral mechanical property of the CdTe power generation glass 9. Preferably, the confluence conductive band is conductive Ag glue or a copper-tin welding band, the confluence conductive band is similar to an adhesive tape and is adhered to the electrode, and after high-temperature lamination, the adhesion effect of the confluence conductive band and the electrode is good.
The positive electrode and the negative electrode of the CdTe generating glass 9 are determined by the PN junction of the semiconductor layer and the leading-out electrode, the positive electrode is close to the P layer, and the negative electrode is arranged on the other side. Taking fig. 1 as an example, the power generation layer 4 is P-type near the front electrode, the other layer is N-type, and the positive and negative electrodes are as shown in fig. 1. The negative electrode is led out from the back electrode, the positive electrode is theoretically led out from the front electrode, and the back electrode is connected with the front electrode through the second channel for design requirements, so that the positive electrode is also led out from the back electrode. On the positive electrode side, the confluence conducting band can not cover the first channel 3 engraved by the laser, so that the first section of short circuit is effectively avoided; at the negative electrode side, the confluence conducting strip is pasted in the nth sub-battery and can not be in contact with the laser engraved channels at the two sides of the nth battery, so that the short circuit of the battery is effectively avoided.
The sub-battery is packaged by adopting TPT, PZT and other insulating materials, and the CdTe power generation glass 9 is packaged after being effectively bonded with EVA/colored PVB. Preferably, the insulating frame is dimensioned according to the edge clearance area, typically set to 5-7 mm. Further, in order to ensure the aesthetic property, the size ratio range of the short side and the long side of the CdTe generating glass 9 is set to be 0.6-0.7, and the side for leading out the current is not cleared.
The invention can flexibly adjust the output voltage of the photovoltaic module according to the requirements of users, meet the charging requirements of different low-voltage products to be charged and improve the adaptability of the CdTe power generation glass 9; the CdTe power generation glass 9 solves the problems that the working voltage of the CdTe power generation glass 9 is higher than that of the existing energy storage element, and the large-scale manufacturing of the CdTe power generation glass 9 matched with the working voltage is lacked.
As shown in fig. 4, the embodiment further provides a CdTe power generation glass charging control system, which includes CdTe power generation glass 9 and a charging assembly, wherein the CdTe power generation glass 9 is obtained by the above preparation method, the charging assembly is connected with the CdTe power generation glass 9, the charging assembly is connected with a product to be charged, and the product to be charged can be implemented by using a load lamp. The integrated CdTe power generation glass device is characterized in that a charging assembly is integrally arranged in a sealing box 10 with an IP65 function, CdTe power generation glass 9 is arranged on the surface of the sealing box 10, the charging assembly comprises a storage battery, a charging state monitoring circuit and a discharging state monitoring circuit, the charging state monitoring circuit and the discharging state monitoring circuit can be realized by adopting light emitting diodes, the charging state monitoring circuit and the discharging state monitoring circuit are connected with the storage battery, and the storage battery is connected with a product to be charged. Wherein, the 5V charging component can adopt a vehicle-mounted charging voltage reduction and voltage stabilization USB charging module sold in the market.
As shown in fig. 5, the specific design of the 24V charging assembly includes: the battery pack comprises a 24V storage battery, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a resistor R11, a resistor R12, a resistor R13, a resistor R14, a resistor R15, a resistor R16, a resistor R17, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a diode D1, a diode D2, a diode D3, a diode D4, a diode D5, a diode D6, a diode D7, a triode Q7, a MOS tube Q7, and a MOS tube Q7, wherein the specific connection mode is shown in fig. 4.
The state is displayed through the light emitting diode, in the daytime, the 24V storage battery is powered through the CdTe power generation glass 9, the voltage and current stabilization anti-reverse charging and discharging functions are achieved, the light emitting diode of the charging state monitoring circuit is on, and the light emitting diode of the discharging state monitoring circuit is not on. At night, the 24V storage battery discharges the products to be charged, the over-discharge prevention function is achieved, meanwhile, the 24V storage battery is controlled to be charged or discharged according to the voltage of the CdTe power generation glass 9, and the purpose of discharging through the 24V storage battery at night is achieved. The light emitting diode of the charging state monitoring circuit is not on, and the light emitting diode of the discharging state monitoring circuit is on. The control circuit has good control effect, meets the requirements of functions and is low in cost.
In the description of the present invention, the terms "mounted," "connected," "fixed," and the like are to be understood broadly and may be fixedly connected, detachably connected, or integrated; may be a mechanical or electrical connection; either directly or indirectly through intervening media, either internally or in any other relationship. Those skilled in the art will understand the specific meaning of the above terms in the present invention. Furthermore, the particular features, structures, etc. described in the examples can be included in at least one implementation and can be combined by one skilled in the art without conflicting therewith. The protection scope of the present invention is not limited to the above specific examples, and embodiments that can be imagined by those skilled in the art without creative efforts based on the basic technical concept of the present invention belong to the protection scope of the present invention.
Claims (9)
1. A preparation method of CdTe power generation glass is characterized by comprising the following steps:
step 1, determining the geometric size of CdTe generating glass (9) according to the working voltage of a product to be charged, and determining the number of sub-batteries in the CdTe generating glass (9);
step 2, preparing a thin-film solar cell panel with the area S;
step 3, edge cleaning and cutting are carried out on the thin-film solar cell panel to obtain a sub-cell of CdTe power generation glass (9);
and 4, assembling the sub-batteries to obtain the CdTe power generation glass (9).
2. The method for preparing CdTe power generating glass as defined in claim 1, wherein the step 2 of preparing the thin film solar cell panel with the area S comprises: depositing a front electrode layer (2) on a glass substrate (1), obtaining a first channel (3) by laser etching the front electrode layer (2), depositing a power generation layer (4) on the front electrode layer (2), obtaining a second channel (5) by laser etching the power generation layer (4), depositing a back electrode layer (6) on the power generation layer (4), filling the back electrode layer (6) into the second channel (5) and covering the surface of the power generation layer (4), and then obtaining a third channel (7) by laser etching the back electrode layer (6) and the power generation layer (4); and arranging a drainage bar and a bus bar on the back electrode layer (6), and arranging a packaging layer (8) on the back electrode layer (6) to obtain the thin-film solar cell panel.
3. The method for preparing the CdTe generating glass according to claim 2, wherein in the step 2, the thin film solar cell panel is designed into m CdTe generating glasses (9), wherein S ═ c ═ d, m ═ S/(a ═ b), a and b are respectively the length and the width of the thin film solar cell panel, c and d are respectively the length and the width of the CdTe generating glass (9), n sub-cells with the area of L are contained in one CdTe generating glass (9), wherein n ═ V/Vpm ═ K, L ═ a/n) × b, V is the charging voltage of a product to be charged, Vpm is the working voltage of the CdTe generating glass (9), and K is a matching coefficient, and the value range is 1-2.
4. The method for preparing CdTe generating glass according to claim 3, wherein in the step 3, the edge clearing and cutting of the thin film solar cell panel to obtain sub-cells of the CdTe generating glass (9) comprises the following steps: and (2) removing the film layer at the edge of the thin-film solar cell plate, wherein the edge is removed by adopting laser etching, the laser galvanometer scanning system is used for focusing, and the speed of scanning the galvanometer is as follows: 5500-7100mm/s, the moving speed of the thin-film solar cell panel is as follows: 200-300mm/s, the adjustable range set for the clear edge width is as follows: 7-16mm, and the distance between the edge of the clear edge and the second channel (5) on the two sides of the thin-film solar cell panel is 3-4 mm.
5. The method for preparing CdTe generating glass according to claim 4, wherein the step 4, the step of assembling the cells to obtain the CdTe generating glass (9) comprises the following steps: the sub-batteries are connected in series through an internal second channel (5), and a bus conductive strip is arranged to be connected with the electrodes of the sub-batteries; and coating sealant on the periphery of the sub-battery for insulation, and packaging the sub-battery to obtain the CdTe power generation glass (9).
6. The method for preparing CdTe power generation glass according to claim 5, wherein the confluent conductive tape is conductive Ag glue or copper-tin solder tape.
7. The method for preparing CdTe power generating glass according to claim 2, wherein the encapsulating layer (8) is PVB, TPT or PZT.
8. A charging control system of CdTe generating glass, characterized by comprising CdTe generating glass (9) prepared by the preparation method as claimed in any one of claims 1-7, and further comprising a charging assembly, wherein the charging assembly is connected with the CdTe generating glass (9), and the charging assembly is connected with a product to be charged.
9. The charge control system of CdTe power generating glass as defined in claim 8, wherein the charging assembly comprises a storage battery, a state of charge monitoring circuit and a state of discharge monitoring circuit, both of which are connected to the storage battery, the storage battery being connected to the product to be charged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111350615.3A CN114156364A (en) | 2021-11-15 | 2021-11-15 | Preparation method of CdTe power generation glass and charging control system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111350615.3A CN114156364A (en) | 2021-11-15 | 2021-11-15 | Preparation method of CdTe power generation glass and charging control system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114156364A true CN114156364A (en) | 2022-03-08 |
Family
ID=80456362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111350615.3A Pending CN114156364A (en) | 2021-11-15 | 2021-11-15 | Preparation method of CdTe power generation glass and charging control system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114156364A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115458616A (en) * | 2022-11-14 | 2022-12-09 | 成都中建材光电材料有限公司 | Double-sided power generation glass and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040219801A1 (en) * | 2002-04-25 | 2004-11-04 | Oswald Robert S | Partially transparent photovoltaic modules |
| KR20100080304A (en) * | 2008-12-29 | 2010-07-08 | 주성엔지니어링(주) | Thin film type solar cell, and method for manufacturing the same |
| CN104842073A (en) * | 2014-02-17 | 2015-08-19 | 大族激光科技产业集团股份有限公司 | Laser etching method and device of film solar cell |
| CN108453375A (en) * | 2018-05-25 | 2018-08-28 | 北京莱泽光电技术有限公司 | A kind of solar battery thin film clear side processing unit (plant) and processing method |
| CN111446743A (en) * | 2018-12-27 | 2020-07-24 | 德州易能新能源科技有限公司 | Photovoltaic charging device |
-
2021
- 2021-11-15 CN CN202111350615.3A patent/CN114156364A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040219801A1 (en) * | 2002-04-25 | 2004-11-04 | Oswald Robert S | Partially transparent photovoltaic modules |
| KR20100080304A (en) * | 2008-12-29 | 2010-07-08 | 주성엔지니어링(주) | Thin film type solar cell, and method for manufacturing the same |
| CN104842073A (en) * | 2014-02-17 | 2015-08-19 | 大族激光科技产业集团股份有限公司 | Laser etching method and device of film solar cell |
| CN108453375A (en) * | 2018-05-25 | 2018-08-28 | 北京莱泽光电技术有限公司 | A kind of solar battery thin film clear side processing unit (plant) and processing method |
| CN111446743A (en) * | 2018-12-27 | 2020-07-24 | 德州易能新能源科技有限公司 | Photovoltaic charging device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115458616A (en) * | 2022-11-14 | 2022-12-09 | 成都中建材光电材料有限公司 | Double-sided power generation glass and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106159020B (en) | Use the two-sided photovoltaic module of heterojunction solar battery | |
| TWI504000B (en) | Photovoltaic module with integrated energy storage | |
| US20130043733A1 (en) | Apparatus and method for producing ac power | |
| KR101652607B1 (en) | Thin film solar module having series connection and method for the series connection of thin film solar cells | |
| ZA200607745B (en) | Electric energy generating modules with a two-dimensional profile and method of fabricating the same | |
| ITVA20090011A1 (en) | SOLAR PANEL WITH TWO MONOLITHIC MULTICELLULAR PHOTOVOLTAIC MODULES OF DIFFERENT TECHNOLOGY | |
| US4914044A (en) | Method of making tandem solar cell module | |
| US20120152325A1 (en) | Junction box attachment to solar module laminate | |
| CN203434928U (en) | Portable solar charger | |
| CN101699632A (en) | Film photovoltaic cell with added power supply for providing electric field effect | |
| KR20190000859U (en) | Photovoltaic assembly | |
| KR20120051971A (en) | Solar cell module | |
| CN114156364A (en) | Preparation method of CdTe power generation glass and charging control system | |
| CN106252447B (en) | A kind of composite solar battery and preparation method thereof | |
| CN203434927U (en) | Curly folding type solar cell charging panel | |
| CN206480635U (en) | One kind section battery photovoltaic module | |
| CN100559614C (en) | Thin-film solar cell module and processing method thereof | |
| CN109087961A (en) | A kind of photovoltaic module and preparation method thereof | |
| CN111200031B (en) | Thin film photovoltaic module with integrated electronics and method of making same | |
| CN207743232U (en) | Bamboo slip type device of solar generating | |
| US20120024339A1 (en) | Photovoltaic Module Including Transparent Sheet With Channel | |
| CN111446743A (en) | Photovoltaic charging device | |
| CN212725330U (en) | Curved surface photovoltaic module | |
| CN101286534A (en) | Small-sized cis series film solar battery assembly | |
| KR102531270B1 (en) | Silicon-Based Window-Type Semi Transparent Flexible Solar Cell Module And Manufacturing Method Of Solar Cell Module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220308 |
|
| RJ01 | Rejection of invention patent application after publication |